ATE265557T1 - Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck - Google Patents
Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruckInfo
- Publication number
- ATE265557T1 ATE265557T1 AT98953233T AT98953233T ATE265557T1 AT E265557 T1 ATE265557 T1 AT E265557T1 AT 98953233 T AT98953233 T AT 98953233T AT 98953233 T AT98953233 T AT 98953233T AT E265557 T1 ATE265557 T1 AT E265557T1
- Authority
- AT
- Austria
- Prior art keywords
- polymer precursor
- chemical vapor
- raw materials
- glow discharge
- steam pressure
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Polymerisation Methods In General (AREA)
- Chemical Vapour Deposition (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/939,594 US6224948B1 (en) | 1997-09-29 | 1997-09-29 | Plasma enhanced chemical deposition with low vapor pressure compounds |
PCT/US1998/020741 WO1999016931A1 (en) | 1997-09-29 | 1998-09-29 | Plasma enhanced chemical deposition with low vapor pressure compounds |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE265557T1 true ATE265557T1 (de) | 2004-05-15 |
Family
ID=25473428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98953233T ATE265557T1 (de) | 1997-09-29 | 1998-09-29 | Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck |
Country Status (8)
Country | Link |
---|---|
US (3) | US6224948B1 (de) |
EP (1) | EP1019562B1 (de) |
JP (1) | JP3560914B2 (de) |
CN (1) | CN1130472C (de) |
AT (1) | ATE265557T1 (de) |
CA (1) | CA2303260C (de) |
DE (1) | DE69823532T2 (de) |
WO (1) | WO1999016931A1 (de) |
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1997
- 1997-09-29 US US08/939,594 patent/US6224948B1/en not_active Expired - Lifetime
-
1998
- 1998-09-29 WO PCT/US1998/020741 patent/WO1999016931A1/en active IP Right Grant
- 1998-09-29 CA CA002303260A patent/CA2303260C/en not_active Expired - Fee Related
- 1998-09-29 DE DE69823532T patent/DE69823532T2/de not_active Expired - Lifetime
- 1998-09-29 EP EP98953233A patent/EP1019562B1/de not_active Expired - Lifetime
- 1998-09-29 AT AT98953233T patent/ATE265557T1/de not_active IP Right Cessation
- 1998-09-29 CN CN98809599.8A patent/CN1130472C/zh not_active Expired - Lifetime
- 1998-09-29 JP JP2000513990A patent/JP3560914B2/ja not_active Expired - Lifetime
-
2001
- 2001-03-19 US US09/811,874 patent/US6656537B2/en not_active Expired - Lifetime
- 2001-05-11 US US09/853,906 patent/US6627267B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA2303260A1 (en) | 1999-04-08 |
US6627267B2 (en) | 2003-09-30 |
EP1019562A1 (de) | 2000-07-19 |
DE69823532T2 (de) | 2005-05-12 |
DE69823532D1 (de) | 2004-06-03 |
JP3560914B2 (ja) | 2004-09-02 |
US6656537B2 (en) | 2003-12-02 |
JP2001518561A (ja) | 2001-10-16 |
WO1999016931A1 (en) | 1999-04-08 |
CN1130472C (zh) | 2003-12-10 |
EP1019562B1 (de) | 2004-04-28 |
US20020172778A1 (en) | 2002-11-21 |
CN1272142A (zh) | 2000-11-01 |
US20010019747A1 (en) | 2001-09-06 |
CA2303260C (en) | 2004-11-16 |
US6224948B1 (en) | 2001-05-01 |
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