ATE265557T1 - Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck - Google Patents

Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck

Info

Publication number
ATE265557T1
ATE265557T1 AT98953233T AT98953233T ATE265557T1 AT E265557 T1 ATE265557 T1 AT E265557T1 AT 98953233 T AT98953233 T AT 98953233T AT 98953233 T AT98953233 T AT 98953233T AT E265557 T1 ATE265557 T1 AT E265557T1
Authority
AT
Austria
Prior art keywords
polymer precursor
chemical vapor
raw materials
glow discharge
steam pressure
Prior art date
Application number
AT98953233T
Other languages
English (en)
Inventor
John D Affinito
Original Assignee
Battelle Memorial Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Memorial Institute filed Critical Battelle Memorial Institute
Application granted granted Critical
Publication of ATE265557T1 publication Critical patent/ATE265557T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/62Plasma-deposition of organic layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Polymerisation Methods In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
AT98953233T 1997-09-29 1998-09-29 Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck ATE265557T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/939,594 US6224948B1 (en) 1997-09-29 1997-09-29 Plasma enhanced chemical deposition with low vapor pressure compounds
PCT/US1998/020741 WO1999016931A1 (en) 1997-09-29 1998-09-29 Plasma enhanced chemical deposition with low vapor pressure compounds

Publications (1)

Publication Number Publication Date
ATE265557T1 true ATE265557T1 (de) 2004-05-15

Family

ID=25473428

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98953233T ATE265557T1 (de) 1997-09-29 1998-09-29 Plasma unterstütze chemische dampfabscheidung aus rohstoffen mit niedrigem dampfdruck

Country Status (8)

Country Link
US (3) US6224948B1 (de)
EP (1) EP1019562B1 (de)
JP (1) JP3560914B2 (de)
CN (1) CN1130472C (de)
AT (1) ATE265557T1 (de)
CA (1) CA2303260C (de)
DE (1) DE69823532T2 (de)
WO (1) WO1999016931A1 (de)

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CA2303260A1 (en) 1999-04-08
US6627267B2 (en) 2003-09-30
EP1019562A1 (de) 2000-07-19
DE69823532T2 (de) 2005-05-12
DE69823532D1 (de) 2004-06-03
JP3560914B2 (ja) 2004-09-02
US6656537B2 (en) 2003-12-02
JP2001518561A (ja) 2001-10-16
WO1999016931A1 (en) 1999-04-08
CN1130472C (zh) 2003-12-10
EP1019562B1 (de) 2004-04-28
US20020172778A1 (en) 2002-11-21
CN1272142A (zh) 2000-11-01
US20010019747A1 (en) 2001-09-06
CA2303260C (en) 2004-11-16
US6224948B1 (en) 2001-05-01

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