DE60333913D1 - Polymerische antireflexbeschichtungen, die durch plasmaverstärkte chemische aufdampfung abgelagert werden - Google Patents
Polymerische antireflexbeschichtungen, die durch plasmaverstärkte chemische aufdampfung abgelagert werdenInfo
- Publication number
- DE60333913D1 DE60333913D1 DE60333913T DE60333913T DE60333913D1 DE 60333913 D1 DE60333913 D1 DE 60333913D1 DE 60333913 T DE60333913 T DE 60333913T DE 60333913 T DE60333913 T DE 60333913T DE 60333913 D1 DE60333913 D1 DE 60333913D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- methods
- chemical vapor
- polymeric
- vaporing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F238/00—Copolymers of compounds having one or more carbon-to-carbon triple bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Polymerisation Methods In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37663402P | 2002-04-30 | 2002-04-30 | |
US10/423,618 US6852474B2 (en) | 2002-04-30 | 2003-04-24 | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
PCT/US2003/013339 WO2003094213A1 (en) | 2002-04-30 | 2003-04-28 | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60333913D1 true DE60333913D1 (de) | 2010-10-07 |
Family
ID=29406764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60333913T Expired - Lifetime DE60333913D1 (de) | 2002-04-30 | 2003-04-28 | Polymerische antireflexbeschichtungen, die durch plasmaverstärkte chemische aufdampfung abgelagert werden |
Country Status (9)
Country | Link |
---|---|
US (1) | US6852474B2 (de) |
EP (1) | EP1502292B1 (de) |
JP (1) | JP2005524240A (de) |
KR (1) | KR20050003363A (de) |
AT (1) | ATE479198T1 (de) |
AU (1) | AU2003232015A1 (de) |
DE (1) | DE60333913D1 (de) |
TW (1) | TW200400417A (de) |
WO (1) | WO2003094213A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070207406A1 (en) * | 2004-04-29 | 2007-09-06 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
DE102005018737A1 (de) * | 2005-04-22 | 2006-10-26 | Infineon Technologies Ag | Verfahren zum Übertragen von Strukturen von einer Fotomaske in eine Fotolackschicht |
US7375172B2 (en) * | 2005-07-06 | 2008-05-20 | International Business Machines Corporation | Underlayer compositions containing heterocyclic aromatic structures |
KR101152139B1 (ko) * | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법 |
US7914974B2 (en) | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
CN101743640B (zh) * | 2007-07-26 | 2012-12-19 | 康斯坦茨大学 | 具有回蚀刻发射极的硅太阳能电池的制造方法和相应的太阳能电池 |
US20090096106A1 (en) * | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
US8133659B2 (en) | 2008-01-29 | 2012-03-13 | Brewer Science Inc. | On-track process for patterning hardmask by multiple dark field exposures |
US20090325106A1 (en) * | 2008-06-27 | 2009-12-31 | Conley Willard E | Method for Implant Imaging with Spin-on Hard Masks |
US9640396B2 (en) | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
KR101866828B1 (ko) * | 2010-10-14 | 2018-06-14 | 닛산 가가쿠 고교 가부시키 가이샤 | 폴리에테르 구조를 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 |
US9689072B2 (en) | 2014-09-01 | 2017-06-27 | Asm Ip Holding B.V. | Method of depositing thin film |
WO2016167583A1 (ko) * | 2015-04-15 | 2016-10-20 | 엘지전자 주식회사 | 그래핀의 도핑 방법, 그래핀 복합 전극의 제조 방법 및 이를 포함하는 그래핀 구조체 |
KR102278459B1 (ko) * | 2018-08-21 | 2021-07-16 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물 및 패턴 형성 방법 |
JP7395773B2 (ja) | 2020-05-12 | 2023-12-11 | ラム リサーチ コーポレーション | 刺激応答性ポリマー膜の制御された分解 |
JP2023533710A (ja) * | 2020-07-02 | 2023-08-04 | ラム リサーチ コーポレーション | 表面保護及び待ち時間延長のための除去可能なcvdポリマーフィルム |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1077787A (en) * | 1975-11-21 | 1980-05-20 | National Aeronautics And Space Administration | Abrasion resistant coatings for plastic surfaces |
US4397722A (en) * | 1981-12-31 | 1983-08-09 | International Business Machines Corporation | Polymers from aromatic silanes and process for their preparation |
JP2557898B2 (ja) * | 1987-07-31 | 1996-11-27 | 株式会社東芝 | 半導体装置 |
US5137780A (en) * | 1987-10-16 | 1992-08-11 | The Curators Of The University Of Missouri | Article having a composite insulative coating |
US5169494A (en) * | 1989-03-27 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Fine pattern forming method |
US5198153A (en) * | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
US5246782A (en) * | 1990-12-10 | 1993-09-21 | The Dow Chemical Company | Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings |
US5443941A (en) * | 1993-03-01 | 1995-08-22 | National Semiconductor Corporation | Plasma polymer antireflective coating |
JP3325715B2 (ja) * | 1994-08-24 | 2002-09-17 | ホーヤ株式会社 | 反射防止性を有する光学部材の製造方法 |
US5545588A (en) * | 1995-05-05 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of using disposable hard mask for gate critical dimension control |
US5968324A (en) * | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
DE69708787T2 (de) * | 1996-03-06 | 2002-06-20 | Clariant Finance Bvi Ltd | Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie |
US5633210A (en) * | 1996-04-29 | 1997-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming damage free patterned layers adjoining the edges of high step height apertures |
US5807790A (en) * | 1996-05-07 | 1998-09-15 | Advanced Micro Devices, Inc. | Selective i-line BARL etch process |
US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
US6428894B1 (en) * | 1997-06-04 | 2002-08-06 | International Business Machines Corporation | Tunable and removable plasma deposited antireflective coatings |
JP3473887B2 (ja) * | 1997-07-16 | 2003-12-08 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法 |
US6063547A (en) * | 1998-06-11 | 2000-05-16 | Chartered Semiconductor Manufacturing, Ltd. | Physical vapor deposition poly-p-phenylene sulfide film as a bottom anti-reflective coating on polysilicon |
US6121098A (en) * | 1998-06-30 | 2000-09-19 | Infineon Technologies North America Corporation | Semiconductor manufacturing method |
US6103456A (en) * | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
US6232388B1 (en) * | 1998-08-17 | 2001-05-15 | Amcol International Corporation | Intercalates formed by co-intercalation of onium ion spacing/coupling agents and monomer, oligomer or polymer MXD6 nylon intercalants and nanocomposites prepared with the intercalates |
US6268282B1 (en) * | 1998-09-03 | 2001-07-31 | Micron Technology, Inc. | Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
US6207238B1 (en) * | 1998-12-16 | 2001-03-27 | Battelle Memorial Institute | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
US6251562B1 (en) * | 1998-12-23 | 2001-06-26 | International Business Machines Corporation | Antireflective polymer and method of use |
KR100363695B1 (ko) * | 1998-12-31 | 2003-04-11 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
US6426125B1 (en) * | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
JP4512217B2 (ja) * | 1999-08-20 | 2010-07-28 | 富士フイルム株式会社 | アリールシラン化合物、発光素子材料およびそれを使用した発光素子 |
AU2001233290A1 (en) * | 2000-02-22 | 2001-09-03 | Brewer Science, Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
US6461717B1 (en) * | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
CA2408556A1 (en) * | 2000-05-10 | 2001-11-15 | Nkt Research A/S | A method of coating the surface of an inorganic substrate with an organic material and the product obtained |
DE60128818T2 (de) * | 2000-09-19 | 2008-02-07 | Shipley Co., L.L.C., Marlborough | Antireflexionszusammensetzung |
US20030054117A1 (en) * | 2001-02-02 | 2003-03-20 | Brewer Science, Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
US6309955B1 (en) * | 2001-02-16 | 2001-10-30 | Advanced Micro Devices, Inc. | Method for using a CVD organic barc as a hard mask during via etch |
EP1390421A1 (de) * | 2001-05-23 | 2004-02-25 | NKT Research & Innovation A/S | Plasmapolymerisationsverfahren von substituierten benzolen, dadurch hergestelltes polymermaterial und sein verwendung |
-
2003
- 2003-04-24 US US10/423,618 patent/US6852474B2/en not_active Expired - Fee Related
- 2003-04-28 AT AT03747615T patent/ATE479198T1/de not_active IP Right Cessation
- 2003-04-28 JP JP2004502339A patent/JP2005524240A/ja not_active Withdrawn
- 2003-04-28 AU AU2003232015A patent/AU2003232015A1/en not_active Abandoned
- 2003-04-28 DE DE60333913T patent/DE60333913D1/de not_active Expired - Lifetime
- 2003-04-28 KR KR10-2004-7016303A patent/KR20050003363A/ko not_active Application Discontinuation
- 2003-04-28 EP EP03747615A patent/EP1502292B1/de not_active Expired - Lifetime
- 2003-04-28 WO PCT/US2003/013339 patent/WO2003094213A1/en active Application Filing
- 2003-04-30 TW TW092110120A patent/TW200400417A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2003094213A1 (en) | 2003-11-13 |
TW200400417A (en) | 2004-01-01 |
EP1502292A4 (de) | 2009-01-21 |
EP1502292A1 (de) | 2005-02-02 |
US20030224586A1 (en) | 2003-12-04 |
JP2005524240A (ja) | 2005-08-11 |
AU2003232015A1 (en) | 2003-11-17 |
EP1502292B1 (de) | 2010-08-25 |
ATE479198T1 (de) | 2010-09-15 |
KR20050003363A (ko) | 2005-01-10 |
US6852474B2 (en) | 2005-02-08 |
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