ATE541236T1 - Organische polymerische antireflexionsbeschichtungen, die durch chemisches aufdampfen abgelagert werden - Google Patents
Organische polymerische antireflexionsbeschichtungen, die durch chemisches aufdampfen abgelagert werdenInfo
- Publication number
- ATE541236T1 ATE541236T1 AT01905408T AT01905408T ATE541236T1 AT E541236 T1 ATE541236 T1 AT E541236T1 AT 01905408 T AT01905408 T AT 01905408T AT 01905408 T AT01905408 T AT 01905408T AT E541236 T1 ATE541236 T1 AT E541236T1
- Authority
- AT
- Austria
- Prior art keywords
- compound
- chemical vapor
- antireflective
- organic polymeric
- substrate surface
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51142100A | 2000-02-22 | 2000-02-22 | |
US09/745,350 US6936405B2 (en) | 2000-02-22 | 2000-12-21 | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
PCT/US2001/003568 WO2001063358A1 (en) | 2000-02-22 | 2001-02-02 | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE541236T1 true ATE541236T1 (de) | 2012-01-15 |
Family
ID=24034832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01905408T ATE541236T1 (de) | 2000-02-22 | 2001-02-02 | Organische polymerische antireflexionsbeschichtungen, die durch chemisches aufdampfen abgelagert werden |
Country Status (2)
Country | Link |
---|---|
US (2) | US6936405B2 (de) |
AT (1) | ATE541236T1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936405B2 (en) * | 2000-02-22 | 2005-08-30 | Brewer Science Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
DE102005018737A1 (de) * | 2005-04-22 | 2006-10-26 | Infineon Technologies Ag | Verfahren zum Übertragen von Strukturen von einer Fotomaske in eine Fotolackschicht |
US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
US20090096106A1 (en) | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
KR101414278B1 (ko) * | 2009-11-13 | 2014-07-02 | 제일모직 주식회사 | 레지스트 하층막용 고분자, 이를 포함하는 레지스트 하층막 조성물 및 소자의 패턴 형성 방법 |
EP2770373A1 (de) | 2013-02-20 | 2014-08-27 | Imec | Konforme antireflektive Beschichtung |
US9689072B2 (en) | 2014-09-01 | 2017-06-27 | Asm Ip Holding B.V. | Method of depositing thin film |
US12000039B1 (en) * | 2023-10-13 | 2024-06-04 | Michael Walach | Cleaning anti-reflective coating process chamber parts |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4747674A (en) * | 1986-04-18 | 1988-05-31 | Polaroid Corporation | Contrast enhancement filter |
JP2557898B2 (ja) | 1987-07-31 | 1996-11-27 | 株式会社東芝 | 半導体装置 |
US5137780A (en) | 1987-10-16 | 1992-08-11 | The Curators Of The University Of Missouri | Article having a composite insulative coating |
US5169494A (en) | 1989-03-27 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Fine pattern forming method |
US5198153A (en) | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
US5153986A (en) | 1991-07-17 | 1992-10-13 | International Business Machines | Method for fabricating metal core layers for a multi-layer circuit board |
US5443941A (en) | 1993-03-01 | 1995-08-22 | National Semiconductor Corporation | Plasma polymer antireflective coating |
US5731385A (en) * | 1993-12-16 | 1998-03-24 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
JP3457372B2 (ja) | 1993-12-28 | 2003-10-14 | 日本写真印刷株式会社 | 絞り機能付きレンズとその製造方法 |
JPH07211616A (ja) | 1994-01-21 | 1995-08-11 | Matsushita Electric Ind Co Ltd | 微細パターン形成方法 |
US5607824A (en) * | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
JPH0864492A (ja) * | 1994-08-18 | 1996-03-08 | Sony Corp | 反射防止膜およびこれを用いたパターン形成方法 |
TW388083B (en) | 1995-02-20 | 2000-04-21 | Hitachi Ltd | Resist pattern-forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed |
US5545588A (en) | 1995-05-05 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of using disposable hard mask for gate critical dimension control |
US5968324A (en) | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
EP1012635B1 (de) * | 1997-01-27 | 2006-04-19 | Peter D. Haaland | Verfahren zur verminderung der reflexion von optischen substraten |
US6150010A (en) * | 1997-03-04 | 2000-11-21 | Texas Instruments Incorporated | Integrated circuit insulator |
US6063547A (en) | 1998-06-11 | 2000-05-16 | Chartered Semiconductor Manufacturing, Ltd. | Physical vapor deposition poly-p-phenylene sulfide film as a bottom anti-reflective coating on polysilicon |
US6277750B1 (en) * | 1998-07-10 | 2001-08-21 | Clariant Finance (Bvi) Limited | Composition for bottom reflection preventive film and novel polymeric dye for use in the same |
US6300672B1 (en) * | 1998-07-22 | 2001-10-09 | Siemens Aktiengesellschaft | Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication |
TW411503B (en) * | 1999-07-23 | 2000-11-11 | Taiwan Semiconductor Mfg | Method of forming bottom anti-reflective coating on substrate |
US6936405B2 (en) * | 2000-02-22 | 2005-08-30 | Brewer Science Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
US6309955B1 (en) * | 2001-02-16 | 2001-10-30 | Advanced Micro Devices, Inc. | Method for using a CVD organic barc as a hard mask during via etch |
-
2000
- 2000-12-21 US US09/745,350 patent/US6936405B2/en not_active Expired - Fee Related
-
2001
- 2001-02-02 AT AT01905408T patent/ATE541236T1/de active
- 2001-10-30 US US10/017,982 patent/US20020132190A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20010021481A1 (en) | 2001-09-13 |
US20020132190A1 (en) | 2002-09-19 |
US6936405B2 (en) | 2005-08-30 |
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