ATE173302T1 - Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungen - Google Patents
Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungenInfo
- Publication number
- ATE173302T1 ATE173302T1 AT95850234T AT95850234T ATE173302T1 AT E173302 T1 ATE173302 T1 AT E173302T1 AT 95850234 T AT95850234 T AT 95850234T AT 95850234 T AT95850234 T AT 95850234T AT E173302 T1 ATE173302 T1 AT E173302T1
- Authority
- AT
- Austria
- Prior art keywords
- film
- sputtered
- metallic compound
- producing
- disclosed
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6337931A JPH08176821A (ja) | 1994-12-26 | 1994-12-26 | 薄膜形成方法および装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE173302T1 true ATE173302T1 (de) | 1998-11-15 |
Family
ID=18313350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT95850234T ATE173302T1 (de) | 1994-12-26 | 1995-12-22 | Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungen |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0719874B1 (de) |
| JP (1) | JPH08176821A (de) |
| KR (1) | KR960023214A (de) |
| AT (1) | ATE173302T1 (de) |
| AU (1) | AU692332B2 (de) |
| CA (1) | CA2166174A1 (de) |
| DE (1) | DE69505942T2 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19640832C2 (de) * | 1996-10-02 | 2000-08-10 | Fraunhofer Ges Forschung | Verfahren zur Herstellung wärmereflektierender Schichtsysteme |
| US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
| JP3735461B2 (ja) | 1998-03-27 | 2006-01-18 | 株式会社シンクロン | 複合金属の化合物薄膜形成方法及びその薄膜形成装置 |
| JP2000099922A (ja) * | 1998-09-17 | 2000-04-07 | Sony Corp | 磁気トンネル素子及びその製造方法 |
| JP4573450B2 (ja) * | 2001-02-28 | 2010-11-04 | 朋延 畑 | スパッタリング装置 |
| JP4678996B2 (ja) * | 2001-06-28 | 2011-04-27 | 株式会社アルバック | 誘電体膜の成膜方法及び成膜装置 |
| AU2003254889A1 (en) | 2002-08-09 | 2004-02-25 | Kabushiki Kaisha Kobe Seiko Sho | METHOD FOR PREPARING ALUMNA COATING FILM HAVING Alpha-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE |
| JP5697829B2 (ja) * | 2002-12-04 | 2015-04-08 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツングLeybold Optics GmbH | 多層膜を製造する方法および前記方法を実施するための装置 |
| DE10347521A1 (de) | 2002-12-04 | 2004-06-24 | Leybold Optics Gmbh | Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens |
| KR100729031B1 (ko) * | 2003-06-03 | 2007-06-14 | 신크론 컴퍼니 리미티드 | 박막형성방법 및 형성장치 |
| JP4613015B2 (ja) * | 2004-02-10 | 2011-01-12 | 株式会社アルバック | 成膜方法及び成膜装置 |
| JP4986862B2 (ja) * | 2004-12-17 | 2012-07-25 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッド | 光学膜のための耐傷性空気酸化性保護層 |
| JP2007186771A (ja) * | 2006-01-16 | 2007-07-26 | Bridgestone Corp | ガスフロースパッタリング成膜方法及び装置 |
| JP5468191B2 (ja) * | 2006-04-17 | 2014-04-09 | 株式会社シンクロン | 有色基材の製造方法および有色基材 |
| JP4610595B2 (ja) * | 2007-09-28 | 2011-01-12 | 株式会社アルバック | シリコン半導体に於ける化合物バリア膜形成方法 |
| KR101302237B1 (ko) * | 2008-09-05 | 2013-09-02 | 신크론 컴퍼니 리미티드 | 성막방법 및 발유성 기재 |
| JP5156041B2 (ja) * | 2010-03-19 | 2013-03-06 | 株式会社シンクロン | 薄膜形成方法 |
| JP7154086B2 (ja) * | 2018-09-26 | 2022-10-17 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| CN114703461B (zh) * | 2022-04-12 | 2024-03-15 | 浙江水晶光电科技股份有限公司 | 一种化合物薄膜及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4151064A (en) * | 1977-12-27 | 1979-04-24 | Coulter Stork U.S.A., Inc. | Apparatus for sputtering cylinders |
| US4591418A (en) * | 1984-10-26 | 1986-05-27 | The Parker Pen Company | Microlaminated coating |
| JPS62256956A (ja) * | 1986-04-30 | 1987-11-09 | Honda Motor Co Ltd | チタン系製品の表面処理方法 |
| US4842704A (en) * | 1987-07-29 | 1989-06-27 | Collins George J | Magnetron deposition of ceramic oxide-superconductor thin films |
| DE69033441T2 (de) * | 1989-11-13 | 2000-05-18 | Optical Coating Laboratory Inc., Santa Rosa | Geometrie und Gestaltungen eines Geräts zum Magnetronzerstäuben |
| JPH06101020A (ja) * | 1992-09-21 | 1994-04-12 | Mitsubishi Electric Corp | 薄膜形成方法 |
-
1994
- 1994-12-26 JP JP6337931A patent/JPH08176821A/ja active Pending
-
1995
- 1995-12-22 DE DE69505942T patent/DE69505942T2/de not_active Expired - Fee Related
- 1995-12-22 AT AT95850234T patent/ATE173302T1/de not_active IP Right Cessation
- 1995-12-22 EP EP95850234A patent/EP0719874B1/de not_active Revoked
- 1995-12-23 KR KR1019950055583A patent/KR960023214A/ko not_active Withdrawn
- 1995-12-27 CA CA002166174A patent/CA2166174A1/en not_active Abandoned
- 1995-12-28 AU AU40761/95A patent/AU692332B2/en not_active Withdrawn - After Issue
Also Published As
| Publication number | Publication date |
|---|---|
| CA2166174A1 (en) | 1996-06-27 |
| DE69505942D1 (de) | 1998-12-17 |
| EP0719874B1 (de) | 1998-11-11 |
| EP0719874A1 (de) | 1996-07-03 |
| JPH08176821A (ja) | 1996-07-09 |
| KR960023214A (ko) | 1996-07-18 |
| AU692332B2 (en) | 1998-06-04 |
| DE69505942T2 (de) | 1999-04-08 |
| AU4076195A (en) | 1996-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |