ATE173302T1 - Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungen - Google Patents

Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungen

Info

Publication number
ATE173302T1
ATE173302T1 AT95850234T AT95850234T ATE173302T1 AT E173302 T1 ATE173302 T1 AT E173302T1 AT 95850234 T AT95850234 T AT 95850234T AT 95850234 T AT95850234 T AT 95850234T AT E173302 T1 ATE173302 T1 AT E173302T1
Authority
AT
Austria
Prior art keywords
film
sputtered
metallic compound
producing
disclosed
Prior art date
Application number
AT95850234T
Other languages
English (en)
Inventor
Junichi Tamoto
Katsuhisa Okada
Seishi Narisawa
Takashi Ito
Original Assignee
Shincron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18313350&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE173302(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Application granted granted Critical
Publication of ATE173302T1 publication Critical patent/ATE173302T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0073Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C23C14/0078Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AT95850234T 1994-12-26 1995-12-22 Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungen ATE173302T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6337931A JPH08176821A (ja) 1994-12-26 1994-12-26 薄膜形成方法および装置

Publications (1)

Publication Number Publication Date
ATE173302T1 true ATE173302T1 (de) 1998-11-15

Family

ID=18313350

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95850234T ATE173302T1 (de) 1994-12-26 1995-12-22 Verfahren und vorrichtung zur herstellung dünner schichten von metallischen verbindungen

Country Status (7)

Country Link
EP (1) EP0719874B1 (de)
JP (1) JPH08176821A (de)
KR (1) KR960023214A (de)
AT (1) ATE173302T1 (de)
AU (1) AU692332B2 (de)
CA (1) CA2166174A1 (de)
DE (1) DE69505942T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640832C2 (de) * 1996-10-02 2000-08-10 Fraunhofer Ges Forschung Verfahren zur Herstellung wärmereflektierender Schichtsysteme
US6103320A (en) * 1998-03-05 2000-08-15 Shincron Co., Ltd. Method for forming a thin film of a metal compound by vacuum deposition
JP3735461B2 (ja) * 1998-03-27 2006-01-18 株式会社シンクロン 複合金属の化合物薄膜形成方法及びその薄膜形成装置
JP2000099922A (ja) * 1998-09-17 2000-04-07 Sony Corp 磁気トンネル素子及びその製造方法
JP4573450B2 (ja) * 2001-02-28 2010-11-04 朋延 畑 スパッタリング装置
JP4678996B2 (ja) * 2001-06-28 2011-04-27 株式会社アルバック 誘電体膜の成膜方法及び成膜装置
US7967957B2 (en) 2002-08-09 2011-06-28 Kobe Steel, Ltd. Method for preparing alumna coating film having alpha-type crystal structure as primary structure
DE10347521A1 (de) 2002-12-04 2004-06-24 Leybold Optics Gmbh Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens
WO2004050944A2 (de) * 2002-12-04 2004-06-17 Leybold Optics Gmbh Verfahren zur herstellung einer multilayerschicht und vorrichtung zur durchführung des verfahrens
CN100489149C (zh) * 2003-06-03 2009-05-20 株式会社新柯隆 薄膜的形成方法及其形成装置
JP4613015B2 (ja) * 2004-02-10 2011-01-12 株式会社アルバック 成膜方法及び成膜装置
KR20070087079A (ko) * 2004-12-17 2007-08-27 에이에프지 인더스트리즈, 인크. 광학 코팅용 공기 산화 가능한 내긁힘성 보호층
JP2007186771A (ja) * 2006-01-16 2007-07-26 Bridgestone Corp ガスフロースパッタリング成膜方法及び装置
JP5468191B2 (ja) * 2006-04-17 2014-04-09 株式会社シンクロン 有色基材の製造方法および有色基材
JP4610595B2 (ja) * 2007-09-28 2011-01-12 株式会社アルバック シリコン半導体に於ける化合物バリア膜形成方法
WO2010026887A1 (ja) * 2008-09-05 2010-03-11 株式会社シンクロン 成膜方法及び撥油性基材
JP5156041B2 (ja) * 2010-03-19 2013-03-06 株式会社シンクロン 薄膜形成方法
JP7154086B2 (ja) * 2018-09-26 2022-10-17 芝浦メカトロニクス株式会社 成膜装置
CN114703461B (zh) * 2022-04-12 2024-03-15 浙江水晶光电科技股份有限公司 一种化合物薄膜及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151064A (en) * 1977-12-27 1979-04-24 Coulter Stork U.S.A., Inc. Apparatus for sputtering cylinders
US4591418A (en) * 1984-10-26 1986-05-27 The Parker Pen Company Microlaminated coating
JPS62256956A (ja) * 1986-04-30 1987-11-09 Honda Motor Co Ltd チタン系製品の表面処理方法
US4842704A (en) * 1987-07-29 1989-06-27 Collins George J Magnetron deposition of ceramic oxide-superconductor thin films
DE69027004T2 (de) * 1989-11-13 1996-11-14 Optical Coating Laboratory Inc Geometrie und Gestaltungen eines Geräts zum Magnetronzerstäuben
JPH06101020A (ja) * 1992-09-21 1994-04-12 Mitsubishi Electric Corp 薄膜形成方法

Also Published As

Publication number Publication date
EP0719874B1 (de) 1998-11-11
AU692332B2 (en) 1998-06-04
EP0719874A1 (de) 1996-07-03
CA2166174A1 (en) 1996-06-27
JPH08176821A (ja) 1996-07-09
DE69505942D1 (de) 1998-12-17
AU4076195A (en) 1996-07-04
KR960023214A (ko) 1996-07-18
DE69505942T2 (de) 1999-04-08

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