DE69505942D1 - Verfahren und Vorrichtung zur Herstellung dünner Schichten von metallischen Verbindungen - Google Patents
Verfahren und Vorrichtung zur Herstellung dünner Schichten von metallischen VerbindungenInfo
- Publication number
- DE69505942D1 DE69505942D1 DE69505942T DE69505942T DE69505942D1 DE 69505942 D1 DE69505942 D1 DE 69505942D1 DE 69505942 T DE69505942 T DE 69505942T DE 69505942 T DE69505942 T DE 69505942T DE 69505942 D1 DE69505942 D1 DE 69505942D1
- Authority
- DE
- Germany
- Prior art keywords
- film
- sputtered
- metallic compound
- metallic compounds
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6337931A JPH08176821A (ja) | 1994-12-26 | 1994-12-26 | 薄膜形成方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69505942D1 true DE69505942D1 (de) | 1998-12-17 |
DE69505942T2 DE69505942T2 (de) | 1999-04-08 |
Family
ID=18313350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69505942T Expired - Fee Related DE69505942T2 (de) | 1994-12-26 | 1995-12-22 | Verfahren und Vorrichtung zur Herstellung dünner Schichten von metallischen Verbindungen |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0719874B1 (de) |
JP (1) | JPH08176821A (de) |
KR (1) | KR960023214A (de) |
AT (1) | ATE173302T1 (de) |
AU (1) | AU692332B2 (de) |
CA (1) | CA2166174A1 (de) |
DE (1) | DE69505942T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19640832C2 (de) * | 1996-10-02 | 2000-08-10 | Fraunhofer Ges Forschung | Verfahren zur Herstellung wärmereflektierender Schichtsysteme |
US6103320A (en) | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
JP3735461B2 (ja) * | 1998-03-27 | 2006-01-18 | 株式会社シンクロン | 複合金属の化合物薄膜形成方法及びその薄膜形成装置 |
JP2000099922A (ja) * | 1998-09-17 | 2000-04-07 | Sony Corp | 磁気トンネル素子及びその製造方法 |
JP4573450B2 (ja) * | 2001-02-28 | 2010-11-04 | 朋延 畑 | スパッタリング装置 |
JP4678996B2 (ja) * | 2001-06-28 | 2011-04-27 | 株式会社アルバック | 誘電体膜の成膜方法及び成膜装置 |
US7967957B2 (en) | 2002-08-09 | 2011-06-28 | Kobe Steel, Ltd. | Method for preparing alumna coating film having alpha-type crystal structure as primary structure |
WO2004050944A2 (de) * | 2002-12-04 | 2004-06-17 | Leybold Optics Gmbh | Verfahren zur herstellung einer multilayerschicht und vorrichtung zur durchführung des verfahrens |
DE10347521A1 (de) | 2002-12-04 | 2004-06-24 | Leybold Optics Gmbh | Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens |
US20060189046A1 (en) * | 2003-06-03 | 2006-08-24 | Yizhou Song | Thin film forming method and forming device therefor |
JP4613015B2 (ja) * | 2004-02-10 | 2011-01-12 | 株式会社アルバック | 成膜方法及び成膜装置 |
RU2424202C2 (ru) * | 2004-12-17 | 2011-07-20 | Эйджиси Флэт Гласс Норс Америка, Инк | Окисляющийся на воздухе стойкий к царапанию защитный слой для оптических покрытий |
JP2007186771A (ja) * | 2006-01-16 | 2007-07-26 | Bridgestone Corp | ガスフロースパッタリング成膜方法及び装置 |
JP5468191B2 (ja) * | 2006-04-17 | 2014-04-09 | 株式会社シンクロン | 有色基材の製造方法および有色基材 |
JP4610595B2 (ja) * | 2007-09-28 | 2011-01-12 | 株式会社アルバック | シリコン半導体に於ける化合物バリア膜形成方法 |
CN102084025B (zh) * | 2008-09-05 | 2013-12-04 | 新柯隆株式会社 | 成膜方法以及防油性基材 |
JP5156041B2 (ja) * | 2010-03-19 | 2013-03-06 | 株式会社シンクロン | 薄膜形成方法 |
JP7154086B2 (ja) * | 2018-09-26 | 2022-10-17 | 芝浦メカトロニクス株式会社 | 成膜装置 |
CN114703461B (zh) * | 2022-04-12 | 2024-03-15 | 浙江水晶光电科技股份有限公司 | 一种化合物薄膜及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151064A (en) * | 1977-12-27 | 1979-04-24 | Coulter Stork U.S.A., Inc. | Apparatus for sputtering cylinders |
US4591418A (en) * | 1984-10-26 | 1986-05-27 | The Parker Pen Company | Microlaminated coating |
JPS62256956A (ja) * | 1986-04-30 | 1987-11-09 | Honda Motor Co Ltd | チタン系製品の表面処理方法 |
US4842704A (en) * | 1987-07-29 | 1989-06-27 | Collins George J | Magnetron deposition of ceramic oxide-superconductor thin films |
EP0428358B1 (de) * | 1989-11-13 | 1996-05-15 | Optical Coating Laboratory, Inc. | Geometrie und Gestaltungen eines Geräts zum Magnetronzerstäuben |
JPH06101020A (ja) * | 1992-09-21 | 1994-04-12 | Mitsubishi Electric Corp | 薄膜形成方法 |
-
1994
- 1994-12-26 JP JP6337931A patent/JPH08176821A/ja active Pending
-
1995
- 1995-12-22 DE DE69505942T patent/DE69505942T2/de not_active Expired - Fee Related
- 1995-12-22 EP EP95850234A patent/EP0719874B1/de not_active Revoked
- 1995-12-22 AT AT95850234T patent/ATE173302T1/de not_active IP Right Cessation
- 1995-12-23 KR KR1019950055583A patent/KR960023214A/ko not_active Application Discontinuation
- 1995-12-27 CA CA002166174A patent/CA2166174A1/en not_active Abandoned
- 1995-12-28 AU AU40761/95A patent/AU692332B2/en not_active Withdrawn - After Issue
Also Published As
Publication number | Publication date |
---|---|
KR960023214A (ko) | 1996-07-18 |
DE69505942T2 (de) | 1999-04-08 |
EP0719874B1 (de) | 1998-11-11 |
EP0719874A1 (de) | 1996-07-03 |
CA2166174A1 (en) | 1996-06-27 |
AU692332B2 (en) | 1998-06-04 |
ATE173302T1 (de) | 1998-11-15 |
JPH08176821A (ja) | 1996-07-09 |
AU4076195A (en) | 1996-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69505942D1 (de) | Verfahren und Vorrichtung zur Herstellung dünner Schichten von metallischen Verbindungen | |
DE69132587T2 (de) | Photolithographisches Verarbeitungsverfahren und Vorrichtung | |
ATE54339T1 (de) | Verfahren und vorrichtung zur abscheidung eines duennen filmes. | |
EP1350864A3 (de) | Verfahren zur Herstellung einer dünnen Schicht und Vorrichtung zur Durchführung dieses Verfahrens | |
DE59004614D1 (de) | Verfahren und vorrichtung zur beschichtung von substraten. | |
ATE138111T1 (de) | Geometrie und gestaltungen eines geräts zum magnetronzerstäuben | |
TW357199B (en) | Process for plasma enhanced anneal of titanium nitride | |
ATE317460T1 (de) | Verfahren zur reduzierung der einbrennzeit eines sputters, minimierung der sputterpartikel und targetvorrichtung dafür | |
IL133820A0 (en) | Method and apparatus for fabrication of thin films by chemical vapor deposition | |
HU174175B (hu) | Sposob poluchenija tonkikh sloev | |
ATE223514T1 (de) | Organisches substrat mit optischen schichten hergestellt mittels magnetron-zerstäubung und verfahren zu seiner herstellung | |
MY108491A (en) | Process for producing a patterned metal surface. | |
ATE168327T1 (de) | Verfahren und vorrichtung zur herstellung metallischer flächenelemente auf substraten | |
ATE204616T1 (de) | Verfahren und vorrichtung zur herstellung eines beschichteten substrats | |
ATE143061T1 (de) | Verfahren zur herstellung einer silizium- enthaltenden schicht auf ein metallisches substrat sowie anti-korrosionsbehandlung | |
ATE151670T1 (de) | Sperrfilm und verfahren zu seiner herstellung | |
JPS5638464A (en) | Formation of nitride film | |
ATE73869T1 (de) | Verfahren und vorrichtung zum selektiven chemischen aufdampfen. | |
EP0132322A3 (de) | Thermische Crack-Anlage zur Herstellung von Pnictidfilmen in Hochvakuumverfahren | |
JPS63259070A (ja) | 金属酸化物薄膜作成方法 | |
SU715362A1 (ru) | Фотошаблон | |
EP0087151A3 (de) | Verfahren zum Herstellen von Schichten aus hochschmelzenden Metallen bzw. Metallverbindungen durch Abscheidung aus der Dampfphase | |
JPH0317902B2 (de) | ||
JPS6184367A (ja) | 有機薄膜の形成法 | |
US4885043A (en) | Method for selective decarburization of iron based material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8339 | Ceased/non-payment of the annual fee |