AP2149A - Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films. - Google Patents

Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Info

Publication number
AP2149A
AP2149A AP2006003508A AP2006003508A AP2149A AP 2149 A AP2149 A AP 2149A AP 2006003508 A AP2006003508 A AP 2006003508A AP 2006003508 A AP2006003508 A AP 2006003508A AP 2149 A AP2149 A AP 2149A
Authority
AP
ARIPO
Prior art keywords
iiia
preparation
group
semiconductor films
alloy semiconductor
Prior art date
Application number
AP2006003508A
Other languages
English (en)
Other versions
AP2006003508A0 (en
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AP2149(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Publication of AP2006003508A0 publication Critical patent/AP2006003508A0/xx
Application granted granted Critical
Publication of AP2149A publication Critical patent/AP2149A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Particle Accelerators (AREA)
AP2006003508A 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films. AP2149A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (2)

Publication Number Publication Date
AP2006003508A0 AP2006003508A0 (en) 2006-02-28
AP2149A true AP2149A (en) 2010-09-01

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.
AP2006003508A AP2149A (en) 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.

Country Status (20)

Country Link
US (3) US7744705B2 (ru)
EP (3) EP1654751A2 (ru)
JP (2) JP4864705B2 (ru)
KR (2) KR101004452B1 (ru)
AP (2) AP2180A (ru)
AT (1) ATE510304T2 (ru)
AU (2) AU2004301075B2 (ru)
BR (2) BRPI0413567A (ru)
CA (2) CA2535703C (ru)
CY (1) CY1111940T1 (ru)
DE (1) DE202004021800U1 (ru)
DK (1) DK1654769T4 (ru)
EA (2) EA009012B1 (ru)
EG (1) EG25410A (ru)
ES (1) ES2366888T5 (ru)
HK (1) HK1097105A1 (ru)
IL (2) IL173693A (ru)
MX (2) MXPA06001726A (ru)
OA (2) OA13236A (ru)
WO (2) WO2005017979A2 (ru)

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US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) * 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
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TW201124544A (en) * 2009-11-24 2011-07-16 Applied Quantum Technology Llc Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
KR20110060139A (ko) * 2009-11-30 2011-06-08 삼성전자주식회사 태양 전지 제조 방법
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
TWI411121B (zh) * 2010-03-11 2013-10-01 Ind Tech Res Inst 光吸收層之製造方法及應用其之太陽能電池結構
JP5956418B2 (ja) 2010-03-17 2016-07-27 ダウ グローバル テクノロジーズ エルエルシー カルコゲニド系材料及びかかる材料の改良製造方法
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
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US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
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JP2012079997A (ja) * 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
WO2012070481A1 (ja) * 2010-11-22 2012-05-31 京セラ株式会社 光電変換装置
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Also Published As

Publication number Publication date
WO2005017979A2 (en) 2005-02-24
WO2005017978A3 (en) 2005-10-13
BRPI0413567A (pt) 2006-10-17
AU2004301076A1 (en) 2005-02-24
US20070004078A1 (en) 2007-01-04
JP4994032B2 (ja) 2012-08-08
CA2539556A1 (en) 2005-02-24
EA010171B1 (ru) 2008-06-30
EA200600407A1 (ru) 2006-08-25
DK1654769T4 (en) 2018-05-22
ATE510304T2 (de) 2011-06-15
US20060222558A1 (en) 2006-10-05
KR20060058717A (ko) 2006-05-30
JP2007503708A (ja) 2007-02-22
EP1654769B1 (en) 2011-05-18
AU2004301075A1 (en) 2005-02-24
ES2366888T3 (es) 2011-10-26
BRPI0413572A (pt) 2006-10-17
CA2535703C (en) 2011-04-19
IL173693A0 (en) 2006-07-05
EP1654751A2 (en) 2006-05-10
WO2005017978A2 (en) 2005-02-24
EA009012B1 (ru) 2007-10-26
US7744705B2 (en) 2010-06-29
AP2006003508A0 (en) 2006-02-28
AU2004301075B2 (en) 2009-10-08
CA2535703A1 (en) 2005-02-24
JP2007502247A (ja) 2007-02-08
IL173694A0 (en) 2006-07-05
US7682939B2 (en) 2010-03-23
HK1097105A1 (en) 2007-06-15
KR20060082075A (ko) 2006-07-14
DK1654769T3 (da) 2011-09-12
CY1111940T1 (el) 2015-11-04
JP4864705B2 (ja) 2012-02-01
EP1654769B2 (en) 2018-02-07
WO2005017979A3 (en) 2006-06-01
KR101004452B1 (ko) 2010-12-28
KR101027318B1 (ko) 2011-04-06
EP2284905A2 (en) 2011-02-16
EG25410A (en) 2012-01-02
OA13236A (en) 2006-12-13
CA2539556C (en) 2010-10-26
US20100190292A1 (en) 2010-07-29
EA200600406A1 (ru) 2006-08-25
ES2366888T5 (es) 2018-05-17
MXPA06001726A (es) 2007-05-04
AP2006003507A0 (en) 2006-02-28
EP1654769A2 (en) 2006-05-10
US8735214B2 (en) 2014-05-27
AP2180A (en) 2010-11-29
DE202004021800U1 (de) 2011-04-21
IL173693A (en) 2014-01-30
OA13237A (en) 2006-12-13
MXPA06001723A (es) 2007-04-25
AU2004301076B2 (en) 2009-11-05

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