ZA917719B - Method and apparatus for forming diffusion junctions in solar cell substrates - Google Patents
Method and apparatus for forming diffusion junctions in solar cell substratesInfo
- Publication number
- ZA917719B ZA917719B ZA917719A ZA917719A ZA917719B ZA 917719 B ZA917719 B ZA 917719B ZA 917719 A ZA917719 A ZA 917719A ZA 917719 A ZA917719 A ZA 917719A ZA 917719 B ZA917719 B ZA 917719B
- Authority
- ZA
- South Africa
- Prior art keywords
- substrates
- solar cell
- cell substrates
- forming diffusion
- diffusion junctions
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000009792 diffusion process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60400090A | 1990-10-24 | 1990-10-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA917719B true ZA917719B (en) | 1992-02-26 |
Family
ID=24417781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA917719A ZA917719B (en) | 1990-10-24 | 1991-09-26 | Method and apparatus for forming diffusion junctions in solar cell substrates |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0506926B1 (de) |
JP (1) | JP3021650B2 (de) |
CN (1) | CN1028819C (de) |
AT (1) | ATE150584T1 (de) |
AU (2) | AU644025B2 (de) |
CA (1) | CA2070380A1 (de) |
DE (1) | DE69125268T2 (de) |
IL (1) | IL99582A (de) |
WO (1) | WO1992008245A1 (de) |
ZA (1) | ZA917719B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005025933B3 (de) * | 2005-06-06 | 2006-07-13 | Centrotherm Photovoltaics Gmbh + Co. Kg | Dotiergermisch für die Dotierung von Halbleitern |
ITUD20050196A1 (it) * | 2005-11-17 | 2007-05-18 | Gisulfo Baccini | Apparecchiatura per la produzione di celle fotovoltaiche sottili in silicio e di circuiti elettronici in materiale rigido e flessibile |
CN101220518B (zh) * | 2007-01-12 | 2010-04-07 | 中国电子科技集团公司第四十八研究所 | 一种用于高温扩散系统的尾气收集装置 |
US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
US9559228B2 (en) * | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
CN103361733B (zh) * | 2013-06-21 | 2016-03-23 | 中山大学 | 一种光外同轴超声波喷雾激光掺杂系统 |
WO2015016631A1 (ko) * | 2013-08-01 | 2015-02-05 | 주식회사 엘지화학 | 편광 필름의 제조 방법, 편광 필름 제조 장치 및 이를 이용하여 제조되는 편광필름 |
CN104505439A (zh) * | 2015-01-10 | 2015-04-08 | 复旦大学 | 一步完成扩散、表面钝化和减反射的太阳电池制备方法 |
CN108110090B (zh) * | 2018-01-11 | 2020-03-06 | 江苏顺风光电科技有限公司 | 一种n型双面电池制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU499679B2 (en) * | 1976-04-08 | 1979-04-26 | Photon Power Inc | Photovoltaic cell |
US4273950A (en) * | 1979-05-29 | 1981-06-16 | Photowatt International, Inc. | Solar cell and fabrication thereof using microwaves |
US4360393A (en) * | 1980-12-18 | 1982-11-23 | Solarex Corporation | Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates |
DE3631270A1 (de) * | 1986-09-13 | 1988-03-24 | Kopperschmidt Mueller & Co | Vorrichtung zur spruehbeschichtung von werkstuecken |
-
1991
- 1991-09-20 WO PCT/US1991/006843 patent/WO1992008245A1/en active IP Right Grant
- 1991-09-20 JP JP03517259A patent/JP3021650B2/ja not_active Expired - Fee Related
- 1991-09-20 EP EP91918988A patent/EP0506926B1/de not_active Expired - Lifetime
- 1991-09-20 CA CA002070380A patent/CA2070380A1/en not_active Abandoned
- 1991-09-20 DE DE69125268T patent/DE69125268T2/de not_active Expired - Lifetime
- 1991-09-20 AT AT91918988T patent/ATE150584T1/de not_active IP Right Cessation
- 1991-09-20 AU AU87684/91A patent/AU644025B2/en not_active Expired
- 1991-09-26 IL IL9958291A patent/IL99582A/en not_active IP Right Cessation
- 1991-09-26 ZA ZA917719A patent/ZA917719B/xx unknown
- 1991-10-03 CN CN91110637A patent/CN1028819C/zh not_active Expired - Lifetime
-
1993
- 1993-11-04 AU AU50440/93A patent/AU654785B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU654785B2 (en) | 1994-11-17 |
AU5044093A (en) | 1994-01-20 |
EP0506926B1 (de) | 1997-03-19 |
JPH05503395A (ja) | 1993-06-03 |
DE69125268T2 (de) | 1997-10-30 |
WO1992008245A1 (en) | 1992-05-14 |
IL99582A (en) | 1994-06-24 |
IL99582A0 (en) | 1992-08-18 |
JP3021650B2 (ja) | 2000-03-15 |
CA2070380A1 (en) | 1992-04-25 |
AU8768491A (en) | 1992-05-26 |
CN1061492A (zh) | 1992-05-27 |
EP0506926A4 (en) | 1994-11-02 |
AU644025B2 (en) | 1993-12-02 |
EP0506926A1 (de) | 1992-10-07 |
ATE150584T1 (de) | 1997-04-15 |
DE69125268D1 (de) | 1997-04-24 |
CN1028819C (zh) | 1995-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2861867D1 (en) | Process for making planar diodes with low-cost silicon substrates and solar cells produced therefrom | |
EP0177864A3 (en) | Multijunction semiconductor device | |
GB1423085A (en) | Thin low temperature epi regions by conversion of an amorphous layer | |
ZA917719B (en) | Method and apparatus for forming diffusion junctions in solar cell substrates | |
JPS55151349A (en) | Forming method of insulation isolating region | |
JPS5687340A (en) | Semiconductor device and manufacture thereof | |
IE812339L (en) | Device isolation in silicon semiconductor substrates | |
EP0343360A3 (de) | Verfahren zur Herstellung von flachen Übergängen | |
EP0241226A3 (de) | Halbleiteranordnung und Herstellungsverfahren | |
DE2960880D1 (en) | Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration | |
JPS5538097A (en) | Method of doping silicon substrate by boron diffusion | |
JPS5627965A (en) | Manufacture of semiconductor device | |
JPS6461964A (en) | Semiconductor device | |
JPS55158680A (en) | Solar cell and manufacture thereof | |
JPS5583271A (en) | Semiconductor device | |
JPS55158679A (en) | Manufacture of solar cell | |
SE7909584L (sv) | Solcell med grund homoovergang | |
JPS54101278A (en) | Manufacture for semiconductor device | |
JPS5265664A (en) | Selective introduction of impurity in compound semiconductor substrate | |
JPS558079A (en) | Solar battery | |
JPS5538082A (en) | Formation for buried layer of semiconductor device | |
JPS5748258A (en) | Semiconductor memory | |
JPS5723262A (en) | Manufacture of semiconductor device | |
EVANS et al. | Application of semiconductor diffusants to solar cells by screen printing[Patent] | |
JPS5772340A (en) | Quality evaluating method for single crystal silicon wafer |