JPH05503395A - 太陽電池基材の拡散接合部を形成するための方法及び装置 - Google Patents
太陽電池基材の拡散接合部を形成するための方法及び装置Info
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- JPH05503395A JPH05503395A JP3517259A JP51725991A JPH05503395A JP H05503395 A JPH05503395 A JP H05503395A JP 3517259 A JP3517259 A JP 3517259A JP 51725991 A JP51725991 A JP 51725991A JP H05503395 A JPH05503395 A JP H05503395A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (32)
- 1.基板にp−n接合を形成するための方法において、(a)前方面及び後方面 を有すると共に第1のタイプの導電性を有する複数の基板を処理室に供給する段 階と、 (b)前記処理室の中で、空気を使用せずに前記各々の前方面を液体ドーパント 源材料の層で噴霧コーティングする段階と、(c)前記前方面にドーパントを含 む残留物を残すように前記層を乾燥する段階と、 (d)前記乾燥された層を焼生して前記ドーパントを前記残留物から前記基板へ 拡散させ、これにより、前記前方面に隣接して第2の反対のタイプの導電性の領 域とp−n接合部とを形成することを特徴とする、前記方法。
- 2.請求項1の方法において、前記基板の前記後方面には、液体ドーパント源材 料を実質的に供給しないことを特徴とする、前記方法。
- 3.請求項1の方法において、前記ドーパントがリンであることを特徴とする、 前記方法。
- 4.請求項1の方法において、前記液体ドーパント源材料を前記基板上に低速度 で噴霧することを特徴とする、前記方法。
- 5.請求項1の方法において、前記複数の基板を順に前記処理室を通して搬送す ることを特徴とする、前記方法。
- 6.請求項5の方法において、前記複数の基板をコンベアによって前記処理室を 通して搬送することを特徴とする、前記方法。
- 7.請求項6の方法において、前記基板を吸収材料で形成されたベルト上で前記 処理室を通して搬送することを特徴とする、前記方法。
- 8.請求項7の方法において、前記ベルトが、紙あるいは布製のウエブから成る ことを特徴とする、前記方法。
- 9.請求項7の方法において、前記ベルトが紙から形成されることを特徴とする 、前記方法。
- 10.請求項6の方法において、前記コンベアを約12.7乃至254cm/分 (5乃至100インチ/分)の速度で移動させることを特徴とする、前記方法。
- 11.請求項1の方法において、前記段階(d)を、約880℃及び約950℃ の間の焼生温度で実行することを特徴とする、前記方法。
- 12.請求項1の方法において、前記段階(b)を、リンケイ酸ポリマから成る 液体ドーパント源材料で実行することを特徴とする、前記方法。
- 13.請求項1の方法において、前記段階(b)を、湿度制御した雰囲気中で実 行することを特徴とする、前記方法。
- 14.請求項1の方法において、超音波噴霧装置によって前記液体ドーパント源 材料を前記基板上に噴霧することを特徴とする、前記方法。
- 15.請求項14の方法において、前記超音波噴霧装置を、48kHz程度の周 波数で動作させることを特徴とする、前記方法。
- 16.請求項14の方法において、前記超音波噴霧装置を、1分間当たり約48 回程度の完全なストロークの速度で、前記基板を横切りて往復動させることを特 徴とする、前記方法。
- 17.請求項1の方法において、前記液体ドーパント源材料のコーティングを室 温で行うことを特徴とする、前記方法。
- 18.請求項1の方法において、前記液体ドーパント源材料を、(a)室温で前 記基板に付与し、(b)約300℃及び約500℃の間の温度において約2分及 び約5分の間の時間にわたって乾燥し、更に(c)約880℃及び約950℃の 間の温度において約5分及び約20分の間の時間にわたって焼生し、これにより 所望の拡散を提供することを特徴とする、前記方法。
- 19.請求項18の方法において、前記基板がシリコン基板であり、該基板の前 方面に約0.5ミクロンの深さまでリンを拡散させることを特徴とする、前記方 法。
- 20.請求項1の方法において、前記基板にエッチング段階を与え、これにより 、前記段階(d)の後に前記前方面に残っている固体残留物を除去することを特 徴とする、前記方法。
- 21.請求項1の方法において、前記各々の液体の層は、前記基板に付与された 状態で、約1000乃至2000オングストローム単位(Å)を超えない厚みを 有することを特徴とする、前記方法。
- 22.請求項1の方法において、各々の層は、廃生された後に、約1000オン グストローム単位(Å)を超えない厚みを有することを特徴とする、前記方法。
- 23.基板にp−n接合を形成する方法において、(a)第1のタイプの導電性 を有すると共に前方面及び後方面を有する複数の基板を処理室に供給する段階と 、 (b)前記処理室の中で、前記基板の前記後方面には液体ドーパント源材料が実 質的に供給されないようにして、前記基板の各々の前方面を液体ドーパント源材 料の層で噴霧コーティングする段階と、(c)前記層を乾燥させ、前記前方面に ドーパントを含む残留物を残す段階と、(d)前記乾燥された層を焼生して前記 ドーパントを前記残留物から前記基板の中へ拡散させ、これにより、前記前方面 に隣接して第2の反対のタイプの導電性の領域とp−n接合部とを形成する段階 とを備えることを特徴とする、前記方法。
- 24.前方面及び後方面を有することを特徴とする一連の基板にp−n接合を形 成するために用いられる装置において、該装置が、前記基板を支持するためのサ ポート手段と、前記サポート手段上に支持された前記基板の前方面上に、液体ド ーパント源材料を、空気を用いずに噴霧する分配手段と、前記基板を空気中で8 80℃乃至950℃の範囲の温度で加熱して前記液体ドーパント源材料のドーパ ント成分を前記前方面の中に拡散させ、これにより均一な深さを有するp−n接 合部を形成する加熱手段とを備えることを特徴とする、前記装置。
- 25.請求項24の装置において、前記分配手段が超音波スプレイ・ヘッドを備 えることを特徴とする、前記装置。
- 26.請求項25の装置において、前記超音波スプレイ・ヘッドを、約48kH zの周波数で作動させることを特徴とする、前記装置。
- 27.請求項24の装置において、前記基板に前記液体ドーパント源材料を噴霧 している時に前記基板を収容する室を画成する手段と、該室の中の湿度を制御す る手段とを備えることを特徴とする、前記装置。
- 28.請求項24の装置において、前記噴霧手段がその内部に設けられる第1の 噴霧室と、第2の乾燥室と、前記第1及び第2の室の中の湿度を制御する手段と を備えることを特徴とする、前記装置。
- 29.請求項24の装置において、前記サポート手段が、前記基板を前記分配手 段及び前記加熱手段に順次供給するコンベアであることを特徴とする、前記装置 。
- 30.請求項29の装置において、前記コンベアが、前記基板に受け入れられな い過剩の液体ドーパント源材料を吸収することができる材料から成るウエブを備 えることを特徴とする、前記装置。
- 31.請求預30の装置において、前記ウエブが紙から形成されることを特徴と する、前記装置。
- 32.請求項29の装置において、前記スプレイ・ヘッドが前記コンベアを横断 して往復動ずることを特徴とする、前記装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60400090A | 1990-10-24 | 1990-10-24 | |
US604,000 | 1990-10-24 |
Publications (2)
Publication Number | Publication Date |
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JPH05503395A true JPH05503395A (ja) | 1993-06-03 |
JP3021650B2 JP3021650B2 (ja) | 2000-03-15 |
Family
ID=24417781
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JP03517259A Expired - Fee Related JP3021650B2 (ja) | 1990-10-14 | 1991-09-20 | 太陽電池基材の拡散接合部を形成するための方法及び装置 |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0506926B1 (ja) |
JP (1) | JP3021650B2 (ja) |
CN (1) | CN1028819C (ja) |
AT (1) | ATE150584T1 (ja) |
AU (2) | AU644025B2 (ja) |
CA (1) | CA2070380A1 (ja) |
DE (1) | DE69125268T2 (ja) |
IL (1) | IL99582A (ja) |
WO (1) | WO1992008245A1 (ja) |
ZA (1) | ZA917719B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008543097A (ja) * | 2005-06-06 | 2008-11-27 | セントロテルム・フォトヴォルテイクス・アクチエンゲゼルシャフト | 半導体ドーピング用のドーパント混合物 |
JP2014531776A (ja) * | 2011-09-30 | 2014-11-27 | サンパワー コーポレイション | リッジによって分離されるドーピングされた溝領域を伴う太陽電池 |
JP2016521868A (ja) * | 2013-08-01 | 2016-07-25 | エルジー・ケム・リミテッド | 偏光フィルムの製造方法、偏光フィルム製造装置及びそれを用いて製造される偏光フィルム |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITUD20050196A1 (it) * | 2005-11-17 | 2007-05-18 | Gisulfo Baccini | Apparecchiatura per la produzione di celle fotovoltaiche sottili in silicio e di circuiti elettronici in materiale rigido e flessibile |
CN101220518B (zh) * | 2007-01-12 | 2010-04-07 | 中国电子科技集团公司第四十八研究所 | 一种用于高温扩散系统的尾气收集装置 |
US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
CN103361733B (zh) * | 2013-06-21 | 2016-03-23 | 中山大学 | 一种光外同轴超声波喷雾激光掺杂系统 |
CN104505439A (zh) * | 2015-01-10 | 2015-04-08 | 复旦大学 | 一步完成扩散、表面钝化和减反射的太阳电池制备方法 |
CN108110090B (zh) * | 2018-01-11 | 2020-03-06 | 江苏顺风光电科技有限公司 | 一种n型双面电池制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU499679B2 (en) * | 1976-04-08 | 1979-04-26 | Photon Power Inc | Photovoltaic cell |
US4273950A (en) * | 1979-05-29 | 1981-06-16 | Photowatt International, Inc. | Solar cell and fabrication thereof using microwaves |
US4360393A (en) * | 1980-12-18 | 1982-11-23 | Solarex Corporation | Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates |
DE3631270A1 (de) * | 1986-09-13 | 1988-03-24 | Kopperschmidt Mueller & Co | Vorrichtung zur spruehbeschichtung von werkstuecken |
-
1991
- 1991-09-20 DE DE69125268T patent/DE69125268T2/de not_active Expired - Lifetime
- 1991-09-20 EP EP91918988A patent/EP0506926B1/en not_active Expired - Lifetime
- 1991-09-20 WO PCT/US1991/006843 patent/WO1992008245A1/en active IP Right Grant
- 1991-09-20 JP JP03517259A patent/JP3021650B2/ja not_active Expired - Fee Related
- 1991-09-20 CA CA002070380A patent/CA2070380A1/en not_active Abandoned
- 1991-09-20 AT AT91918988T patent/ATE150584T1/de not_active IP Right Cessation
- 1991-09-20 AU AU87684/91A patent/AU644025B2/en not_active Expired
- 1991-09-26 IL IL9958291A patent/IL99582A/en not_active IP Right Cessation
- 1991-09-26 ZA ZA917719A patent/ZA917719B/xx unknown
- 1991-10-03 CN CN91110637A patent/CN1028819C/zh not_active Expired - Lifetime
-
1993
- 1993-11-04 AU AU50440/93A patent/AU654785B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008543097A (ja) * | 2005-06-06 | 2008-11-27 | セントロテルム・フォトヴォルテイクス・アクチエンゲゼルシャフト | 半導体ドーピング用のドーパント混合物 |
JP2014531776A (ja) * | 2011-09-30 | 2014-11-27 | サンパワー コーポレイション | リッジによって分離されるドーピングされた溝領域を伴う太陽電池 |
JP2016521868A (ja) * | 2013-08-01 | 2016-07-25 | エルジー・ケム・リミテッド | 偏光フィルムの製造方法、偏光フィルム製造装置及びそれを用いて製造される偏光フィルム |
US10365420B2 (en) | 2013-08-01 | 2019-07-30 | Lg Chem, Ltd. | Method for manufacturing polarizing film using ultrasonic vibrator for atomizing coating solution |
Also Published As
Publication number | Publication date |
---|---|
EP0506926A1 (en) | 1992-10-07 |
AU8768491A (en) | 1992-05-26 |
CA2070380A1 (en) | 1992-04-25 |
ATE150584T1 (de) | 1997-04-15 |
EP0506926A4 (en) | 1994-11-02 |
AU644025B2 (en) | 1993-12-02 |
IL99582A (en) | 1994-06-24 |
CN1061492A (zh) | 1992-05-27 |
AU5044093A (en) | 1994-01-20 |
EP0506926B1 (en) | 1997-03-19 |
IL99582A0 (en) | 1992-08-18 |
DE69125268T2 (de) | 1997-10-30 |
WO1992008245A1 (en) | 1992-05-14 |
DE69125268D1 (de) | 1997-04-24 |
JP3021650B2 (ja) | 2000-03-15 |
CN1028819C (zh) | 1995-06-07 |
AU654785B2 (en) | 1994-11-17 |
ZA917719B (en) | 1992-02-26 |
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