CN1028819C - 在太阳能电池基片上形成扩散结的方法和设备 - Google Patents
在太阳能电池基片上形成扩散结的方法和设备 Download PDFInfo
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- CN1028819C CN1028819C CN91110637A CN91110637A CN1028819C CN 1028819 C CN1028819 C CN 1028819C CN 91110637 A CN91110637 A CN 91110637A CN 91110637 A CN91110637 A CN 91110637A CN 1028819 C CN1028819 C CN 1028819C
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (32)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US604,000 | 1990-10-14 | ||
US60400090A | 1990-10-24 | 1990-10-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1061492A CN1061492A (zh) | 1992-05-27 |
CN1028819C true CN1028819C (zh) | 1995-06-07 |
Family
ID=24417781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN91110637A Expired - Lifetime CN1028819C (zh) | 1990-10-24 | 1991-10-03 | 在太阳能电池基片上形成扩散结的方法和设备 |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0506926B1 (zh) |
JP (1) | JP3021650B2 (zh) |
CN (1) | CN1028819C (zh) |
AT (1) | ATE150584T1 (zh) |
AU (2) | AU644025B2 (zh) |
CA (1) | CA2070380A1 (zh) |
DE (1) | DE69125268T2 (zh) |
IL (1) | IL99582A (zh) |
WO (1) | WO1992008245A1 (zh) |
ZA (1) | ZA917719B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005025933B3 (de) * | 2005-06-06 | 2006-07-13 | Centrotherm Photovoltaics Gmbh + Co. Kg | Dotiergermisch für die Dotierung von Halbleitern |
ITUD20050196A1 (it) * | 2005-11-17 | 2007-05-18 | Gisulfo Baccini | Apparecchiatura per la produzione di celle fotovoltaiche sottili in silicio e di circuiti elettronici in materiale rigido e flessibile |
CN101220518B (zh) * | 2007-01-12 | 2010-04-07 | 中国电子科技集团公司第四十八研究所 | 一种用于高温扩散系统的尾气收集装置 |
US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
US9559228B2 (en) * | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
CN103361733B (zh) * | 2013-06-21 | 2016-03-23 | 中山大学 | 一种光外同轴超声波喷雾激光掺杂系统 |
US10365420B2 (en) | 2013-08-01 | 2019-07-30 | Lg Chem, Ltd. | Method for manufacturing polarizing film using ultrasonic vibrator for atomizing coating solution |
CN104505439A (zh) * | 2015-01-10 | 2015-04-08 | 复旦大学 | 一步完成扩散、表面钝化和减反射的太阳电池制备方法 |
CN108110090B (zh) * | 2018-01-11 | 2020-03-06 | 江苏顺风光电科技有限公司 | 一种n型双面电池制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU499679B2 (en) * | 1976-04-08 | 1979-04-26 | Photon Power Inc | Photovoltaic cell |
US4273950A (en) * | 1979-05-29 | 1981-06-16 | Photowatt International, Inc. | Solar cell and fabrication thereof using microwaves |
US4360393A (en) * | 1980-12-18 | 1982-11-23 | Solarex Corporation | Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates |
DE3631270A1 (de) * | 1986-09-13 | 1988-03-24 | Kopperschmidt Mueller & Co | Vorrichtung zur spruehbeschichtung von werkstuecken |
-
1991
- 1991-09-20 DE DE69125268T patent/DE69125268T2/de not_active Expired - Lifetime
- 1991-09-20 JP JP03517259A patent/JP3021650B2/ja not_active Expired - Fee Related
- 1991-09-20 AU AU87684/91A patent/AU644025B2/en not_active Expired
- 1991-09-20 AT AT91918988T patent/ATE150584T1/de not_active IP Right Cessation
- 1991-09-20 EP EP91918988A patent/EP0506926B1/en not_active Expired - Lifetime
- 1991-09-20 WO PCT/US1991/006843 patent/WO1992008245A1/en active IP Right Grant
- 1991-09-20 CA CA002070380A patent/CA2070380A1/en not_active Abandoned
- 1991-09-26 IL IL9958291A patent/IL99582A/en not_active IP Right Cessation
- 1991-09-26 ZA ZA917719A patent/ZA917719B/xx unknown
- 1991-10-03 CN CN91110637A patent/CN1028819C/zh not_active Expired - Lifetime
-
1993
- 1993-11-04 AU AU50440/93A patent/AU654785B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0506926B1 (en) | 1997-03-19 |
IL99582A0 (en) | 1992-08-18 |
JPH05503395A (ja) | 1993-06-03 |
ZA917719B (en) | 1992-02-26 |
DE69125268D1 (de) | 1997-04-24 |
CA2070380A1 (en) | 1992-04-25 |
DE69125268T2 (de) | 1997-10-30 |
EP0506926A4 (en) | 1994-11-02 |
AU5044093A (en) | 1994-01-20 |
EP0506926A1 (en) | 1992-10-07 |
CN1061492A (zh) | 1992-05-27 |
AU8768491A (en) | 1992-05-26 |
WO1992008245A1 (en) | 1992-05-14 |
JP3021650B2 (ja) | 2000-03-15 |
AU644025B2 (en) | 1993-12-02 |
IL99582A (en) | 1994-06-24 |
ATE150584T1 (de) | 1997-04-15 |
AU654785B2 (en) | 1994-11-17 |
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Applicant after: ASE Americas, Inc. Applicant before: Mobil Solar Energy Corp. |
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Free format text: CORRECT: APPLICANT TO: ASE AMERICAS, INC. |
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C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
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Owner name: RWE SCHOTT SUN COMPANY Free format text: FORMER NAME OR ADDRESS: ASE AMERICAS, INC. |
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Address after: Massachusetts, USA Patentee after: RWE Shawtt Sun Co. Address before: Massachusetts, USA Patentee before: ASE Americas, Inc. |
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C56 | Change in the name or address of the patentee |
Owner name: SHORT SOLAR CO.,LTD.; Free format text: FORMER NAME OR ADDRESS: RWE SCHOTT SUN COMPANY; |
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Address after: Massachusetts Patentee after: RWE Shawtt Sun Co. Address before: Massachusetts Patentee before: RWE Shawtt Sun Co. |
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CX01 | Expiry of patent term |
Expiration termination date: 20111003 Granted publication date: 19950607 |