ZA757846B - Novel silicon crystals and method of producing same - Google Patents

Novel silicon crystals and method of producing same

Info

Publication number
ZA757846B
ZA757846B ZA757846A ZA757846A ZA757846B ZA 757846 B ZA757846 B ZA 757846B ZA 757846 A ZA757846 A ZA 757846A ZA 757846 A ZA757846 A ZA 757846A ZA 757846 B ZA757846 B ZA 757846B
Authority
ZA
South Africa
Prior art keywords
producing same
silicon crystals
novel silicon
novel
crystals
Prior art date
Application number
ZA757846A
Other languages
English (en)
Inventor
Bernhard Authier
Authier Bernhard
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of ZA757846B publication Critical patent/ZA757846B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045—Directionally solidified castings
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
ZA757846A 1975-02-28 1975-12-17 Novel silicon crystals and method of producing same ZA757846B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2508803A DE2508803C3 (de) 1975-02-28 1975-02-28 Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur

Publications (1)

Publication Number Publication Date
ZA757846B true ZA757846B (en) 1976-11-24

Family

ID=5940115

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA757846A ZA757846B (en) 1975-02-28 1975-12-17 Novel silicon crystals and method of producing same

Country Status (24)

Country Link
US (1) US4382838A (xx)
JP (1) JPS5330988B2 (xx)
AU (1) AU499586B2 (xx)
BE (1) BE839008A (xx)
CA (1) CA1061688A (xx)
CH (1) CH604884A5 (xx)
CS (1) CS199607B2 (xx)
DD (1) DD122478A5 (xx)
DE (1) DE2508803C3 (xx)
DK (1) DK145828C (xx)
ES (1) ES445617A1 (xx)
FR (1) FR2302132A1 (xx)
GB (1) GB1539244A (xx)
HU (1) HU172435B (xx)
IL (1) IL47862A (xx)
IN (1) IN143325B (xx)
IT (1) IT1053650B (xx)
NL (1) NL177612C (xx)
PL (1) PL98068B1 (xx)
RO (1) RO72156A (xx)
SE (1) SE408760B (xx)
SU (1) SU695531A3 (xx)
YU (1) YU291675A (xx)
ZA (1) ZA757846B (xx)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2745247C3 (de) * 1977-10-07 1980-03-13 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern
JPS5460584A (en) * 1977-10-24 1979-05-16 Agency Of Ind Science & Technol Solar battery using silicon ribbon crystal
JPS54121086A (en) * 1978-03-14 1979-09-19 Agency Of Ind Science & Technol Forming method of silicon plate
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen
DE2850790A1 (de) * 1978-11-23 1980-06-12 Siemens Ag Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen
DE2927086A1 (de) * 1979-07-04 1981-01-22 Siemens Ag Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur fuer solarzellen
DE2929669A1 (de) 1979-07-21 1981-01-29 Licentia Gmbh Gemisch eines loesungsmittels fuer die galvanische abscheidung
DE3019635A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3071204D1 (en) * 1980-12-31 1985-11-28 Solarex Corp Method of producing semicrystalline silicon and products formed thereby
JPS57160174A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Thin film solar battery
DE3226931A1 (de) * 1982-07-19 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von grobkristallinem silicium
EP0124284B1 (en) * 1983-03-30 1987-10-21 Hoxan Corporation Method of fabricating polycrystalline silicon wafer and fabrication tray used therefor
DE3427465A1 (de) * 1984-07-25 1986-01-30 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern
JPS6193614A (ja) * 1984-10-15 1986-05-12 Nec Corp 半導体単結晶基板
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
DE4018967A1 (de) * 1990-06-13 1991-12-19 Wacker Chemitronic Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen
WO1994028205A1 (de) * 1993-05-25 1994-12-08 Siemens Aktiengesellschaft Verfahren zur herstellung grossflächiger kristalliner salzkörper und dazu geeignete vorrichtung
JP3596828B2 (ja) * 1995-07-17 2004-12-02 キヤノン株式会社 基体の製造方法
DE19723067C1 (de) * 1997-06-02 1998-12-24 Siemens Ag Verfahren zum einfachen Herstellen großer Kristallkörper
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
DE19934940C2 (de) * 1999-07-26 2001-12-13 Ald Vacuum Techn Ag Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
FR2853913B1 (fr) † 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
JP5486190B2 (ja) 2006-01-20 2014-05-07 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置
DE102006055055A1 (de) * 2006-11-22 2008-05-29 Eos Gmbh Electro Optical Systems Vorrichtung zum schichtweisen Herstellen eines dreidimensionalen Objekts
JP5309539B2 (ja) * 2007-07-12 2013-10-09 住友化学株式会社 精製シリコンの製造方法
CN101755075A (zh) * 2007-07-20 2010-06-23 Bp北美公司 从籽晶制造浇铸硅的方法和装置
EP2505695A3 (en) * 2007-07-20 2013-01-09 AMG Idealcast Solar Corporation Methods for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
JP5125973B2 (ja) * 2007-10-17 2013-01-23 住友化学株式会社 精製シリコンの製造方法
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD73033A (xx) *
US1251951A (en) * 1917-06-18 1918-01-01 W G Armstrong Whitworth And Company Ltd Casting steel ingots.
US2402839A (en) * 1941-03-27 1946-06-25 Bell Telephone Labor Inc Electrical translating device utilizing silicon
NL63276C (xx) * 1941-04-04
GB592303A (en) * 1941-05-27 1947-09-15 Western Electric Co Light sensitive device
NL111507C (xx) * 1956-10-31
LU35658A1 (xx) * 1956-12-24
NL226823A (xx) * 1957-04-15 1900-01-01
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
US3494709A (en) * 1965-05-27 1970-02-10 United Aircraft Corp Single crystal metallic part
US3567526A (en) * 1968-05-01 1971-03-02 United Aircraft Corp Limitation of carbon in single crystal or columnar-grained nickel base superalloys
US3763926A (en) * 1971-09-15 1973-10-09 United Aircraft Corp Apparatus for casting of directionally solidified articles
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same

Also Published As

Publication number Publication date
DE2508803C3 (de) 1982-07-08
NL177612C (nl) 1985-10-16
BE839008A (fr) 1976-08-27
CA1061688A (en) 1979-09-04
YU291675A (en) 1982-05-31
IL47862A0 (en) 1975-11-25
GB1539244A (en) 1979-01-31
HU172435B (hu) 1978-08-28
JPS51101466A (xx) 1976-09-07
PL98068B1 (pl) 1978-04-29
DK145828C (da) 1983-08-29
SE7602574L (sv) 1976-08-30
FR2302132B1 (xx) 1980-08-14
CS199607B2 (en) 1980-07-31
DD122478A5 (xx) 1976-10-12
JPS5330988B2 (xx) 1978-08-30
AU8766475A (en) 1977-06-23
NL7512544A (nl) 1976-08-31
DE2508803B2 (de) 1978-03-09
CH604884A5 (xx) 1978-09-15
FR2302132A1 (fr) 1976-09-24
ES445617A1 (es) 1977-10-01
DE2508803A1 (de) 1976-09-09
DK145828B (da) 1983-03-14
IL47862A (en) 1978-07-31
IN143325B (xx) 1977-11-05
SE408760B (sv) 1979-07-09
SU695531A3 (ru) 1979-10-30
AU499586B2 (en) 1979-04-26
US4382838A (en) 1983-05-10
DK488675A (da) 1976-08-29
RO72156A (ro) 1981-03-30
IT1053650B (it) 1981-10-10
NL177612B (nl) 1985-05-17

Similar Documents

Publication Publication Date Title
ZA757846B (en) Novel silicon crystals and method of producing same
JPS51117199A (en) Method of making single crystal
JPS5215955A (en) Multiivvpulley and method of producing same
JPS5240091A (en) Multiilayer element composed of piezooelectric ceramics and method of producing same
JPS5267582A (en) Semiconductor device and method of producing same
JPS53122684A (en) Method of forming silicon crystal
JPS5224473A (en) Method of producing semiconductor element
JPS51147979A (en) Microelectronic device and method of producing same
JPS51119305A (en) Bricket and method of producing same
JPS5274658A (en) Silicone composition and method of production
JPS5319922A (en) Producing method of crystalline silicon
JPS5234682A (en) Semiconductor device and method of producing same
JPS51124386A (en) Method of producing ic
JPS5239386A (en) Method of producing ic
JPS5222484A (en) Method of producing semiconductor structure
JPS529648A (en) Method of selectively ionnetching silicon
JPS5226190A (en) Semiconductor device and method of producing same
JPS525287A (en) Ic device and method of producing same
JPS51134590A (en) Thermoelectric element and method of producing same
JPS52136831A (en) Producing method of high purity silicon
JPS51151299A (en) Method of making single crystal galliumnitride
JPS51121274A (en) Semiconductor device and method of producing same
JPS5263544A (en) Belt and method of producing same
JPS5242479A (en) Continuous fabrication of determineddform single crystals and apparatus therefor
JPS5272584A (en) Semiconductor device and method of producing same