JPS5460584A - Solar battery using silicon ribbon crystal - Google Patents
Solar battery using silicon ribbon crystalInfo
- Publication number
- JPS5460584A JPS5460584A JP12677477A JP12677477A JPS5460584A JP S5460584 A JPS5460584 A JP S5460584A JP 12677477 A JP12677477 A JP 12677477A JP 12677477 A JP12677477 A JP 12677477A JP S5460584 A JPS5460584 A JP S5460584A
- Authority
- JP
- Japan
- Prior art keywords
- density
- diffusion length
- solar battery
- perferable
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Abstract
PURPOSE: To obtain a high-efficiency solar battery by setting the impurity (majority carrier) density to 1 x 1017∼1 x 1018 cm-3 and growing the Si crystal form the Si fused solution directly into a ribbon shape.
CONSTITUTION: The open voltage is one of the factors to decide the efficiency for the solar battery of pn-junction type, and a high diffusion potential is required for the pn-junction to increase the open voltage. In this respect, a higher impurity (majority carrier) density is perferable to the side of the substrate. The short-circuit current is another factor and is larger the more perferable. In this connection, the larger the minor carrier diffusion length the more perferable. And the higher the impurity density, the smaller the majority carrier diffusion length becmoes. For the Si ribbon crystal and owing to its peculiar property of the crystalline performance, the minor carrier diffusion length is never reduced even though the majority carrier density may become over 1×1017 cm-3, differing from the substrate obtained through the Chokralsky method. And the minor carrier diffusion length becomces maximum at about 1×1017∼1×1018 cm-3
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12677477A JPS5460584A (en) | 1977-10-24 | 1977-10-24 | Solar battery using silicon ribbon crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12677477A JPS5460584A (en) | 1977-10-24 | 1977-10-24 | Solar battery using silicon ribbon crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5460584A true JPS5460584A (en) | 1979-05-16 |
Family
ID=14943591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12677477A Pending JPS5460584A (en) | 1977-10-24 | 1977-10-24 | Solar battery using silicon ribbon crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5460584A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51101466A (en) * | 1975-02-28 | 1976-09-07 | Wacker Chemitronic | |
JPS5271170A (en) * | 1975-12-05 | 1977-06-14 | Mobil Tyco Solar Energy Corp | Method of making mostly single crystal ribon |
-
1977
- 1977-10-24 JP JP12677477A patent/JPS5460584A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51101466A (en) * | 1975-02-28 | 1976-09-07 | Wacker Chemitronic | |
JPS5271170A (en) * | 1975-12-05 | 1977-06-14 | Mobil Tyco Solar Energy Corp | Method of making mostly single crystal ribon |
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