JPS5330988B2 - - Google Patents
Info
- Publication number
- JPS5330988B2 JPS5330988B2 JP829876A JP829876A JPS5330988B2 JP S5330988 B2 JPS5330988 B2 JP S5330988B2 JP 829876 A JP829876 A JP 829876A JP 829876 A JP829876 A JP 829876A JP S5330988 B2 JPS5330988 B2 JP S5330988B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2508803A DE2508803C3 (de) | 1975-02-28 | 1975-02-28 | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51101466A JPS51101466A (ja) | 1976-09-07 |
JPS5330988B2 true JPS5330988B2 (ja) | 1978-08-30 |
Family
ID=5940115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP829876A Expired JPS5330988B2 (ja) | 1975-02-28 | 1976-01-28 |
Country Status (24)
Country | Link |
---|---|
US (1) | US4382838A (ja) |
JP (1) | JPS5330988B2 (ja) |
AU (1) | AU499586B2 (ja) |
BE (1) | BE839008A (ja) |
CA (1) | CA1061688A (ja) |
CH (1) | CH604884A5 (ja) |
CS (1) | CS199607B2 (ja) |
DD (1) | DD122478A5 (ja) |
DE (1) | DE2508803C3 (ja) |
DK (1) | DK145828C (ja) |
ES (1) | ES445617A1 (ja) |
FR (1) | FR2302132A1 (ja) |
GB (1) | GB1539244A (ja) |
HU (1) | HU172435B (ja) |
IL (1) | IL47862A (ja) |
IN (1) | IN143325B (ja) |
IT (1) | IT1053650B (ja) |
NL (1) | NL177612C (ja) |
PL (1) | PL98068B1 (ja) |
RO (1) | RO72156A (ja) |
SE (1) | SE408760B (ja) |
SU (1) | SU695531A3 (ja) |
YU (1) | YU291675A (ja) |
ZA (1) | ZA757846B (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2745247C3 (de) * | 1977-10-07 | 1980-03-13 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern |
JPS5460584A (en) * | 1977-10-24 | 1979-05-16 | Agency Of Ind Science & Technol | Solar battery using silicon ribbon crystal |
JPS54121086A (en) * | 1978-03-14 | 1979-09-19 | Agency Of Ind Science & Technol | Forming method of silicon plate |
DE2850805C2 (de) * | 1978-11-23 | 1986-08-28 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen |
DE2850790A1 (de) * | 1978-11-23 | 1980-06-12 | Siemens Ag | Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen |
DE2927086A1 (de) * | 1979-07-04 | 1981-01-22 | Siemens Ag | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur fuer solarzellen |
DE2929669A1 (de) | 1979-07-21 | 1981-01-29 | Licentia Gmbh | Gemisch eines loesungsmittels fuer die galvanische abscheidung |
DE3019635A1 (de) * | 1980-05-22 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen |
DE3019653A1 (de) * | 1980-05-22 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen |
DE3071204D1 (en) * | 1980-12-31 | 1985-11-28 | Solarex Corp | Method of producing semicrystalline silicon and products formed thereby |
JPS57160174A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Thin film solar battery |
DE3226931A1 (de) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern |
DE3310827A1 (de) * | 1983-03-24 | 1984-09-27 | Bayer Ag, 5090 Leverkusen | Verfahren zur herstellung von grobkristallinem silicium |
EP0124284B1 (en) * | 1983-03-30 | 1987-10-21 | Hoxan Corporation | Method of fabricating polycrystalline silicon wafer and fabrication tray used therefor |
DE3427465A1 (de) * | 1984-07-25 | 1986-01-30 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern |
JPS6193614A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 半導体単結晶基板 |
US5116456A (en) * | 1988-04-18 | 1992-05-26 | Solon Technologies, Inc. | Apparatus and method for growth of large single crystals in plate/slab form |
DE4018967A1 (de) * | 1990-06-13 | 1991-12-19 | Wacker Chemitronic | Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen |
WO1994028205A1 (de) * | 1993-05-25 | 1994-12-08 | Siemens Aktiengesellschaft | Verfahren zur herstellung grossflächiger kristalliner salzkörper und dazu geeignete vorrichtung |
JP3596828B2 (ja) * | 1995-07-17 | 2004-12-02 | キヤノン株式会社 | 基体の製造方法 |
DE19723067C1 (de) * | 1997-06-02 | 1998-12-24 | Siemens Ag | Verfahren zum einfachen Herstellen großer Kristallkörper |
US6313398B1 (en) * | 1999-06-24 | 2001-11-06 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
DE19934940C2 (de) * | 1999-07-26 | 2001-12-13 | Ald Vacuum Techn Ag | Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür |
US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
FR2853913B1 (fr) † | 2003-04-17 | 2006-09-29 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
JP5486190B2 (ja) | 2006-01-20 | 2014-05-07 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置 |
DE102006055055A1 (de) * | 2006-11-22 | 2008-05-29 | Eos Gmbh Electro Optical Systems | Vorrichtung zum schichtweisen Herstellen eines dreidimensionalen Objekts |
JP5309539B2 (ja) * | 2007-07-12 | 2013-10-09 | 住友化学株式会社 | 精製シリコンの製造方法 |
CN101755075A (zh) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | 从籽晶制造浇铸硅的方法和装置 |
EP2505695A3 (en) * | 2007-07-20 | 2013-01-09 | AMG Idealcast Solar Corporation | Methods for manufacturing cast silicon from seed crystals |
US8591649B2 (en) | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
WO2009015167A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
JP5125973B2 (ja) * | 2007-10-17 | 2013-01-23 | 住友化学株式会社 | 精製シリコンの製造方法 |
TW201012978A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Apparatus and method of use for a casting system with independent melting and solidification |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD73033A (ja) * | ||||
US1251951A (en) * | 1917-06-18 | 1918-01-01 | W G Armstrong Whitworth And Company Ltd | Casting steel ingots. |
US2402839A (en) * | 1941-03-27 | 1946-06-25 | Bell Telephone Labor Inc | Electrical translating device utilizing silicon |
NL63276C (ja) * | 1941-04-04 | |||
GB592303A (en) * | 1941-05-27 | 1947-09-15 | Western Electric Co | Light sensitive device |
NL111507C (ja) * | 1956-10-31 | |||
LU35658A1 (ja) * | 1956-12-24 | |||
NL226823A (ja) * | 1957-04-15 | 1900-01-01 | ||
US3012865A (en) * | 1957-11-25 | 1961-12-12 | Du Pont | Silicon purification process |
US3494709A (en) * | 1965-05-27 | 1970-02-10 | United Aircraft Corp | Single crystal metallic part |
US3567526A (en) * | 1968-05-01 | 1971-03-02 | United Aircraft Corp | Limitation of carbon in single crystal or columnar-grained nickel base superalloys |
US3763926A (en) * | 1971-09-15 | 1973-10-09 | United Aircraft Corp | Apparatus for casting of directionally solidified articles |
US3900943A (en) * | 1973-06-07 | 1975-08-26 | Dow Corning | Silicon semiconductor device array and method of making same |
-
1975
- 1975-02-28 DE DE2508803A patent/DE2508803C3/de not_active Expired
- 1975-08-04 IL IL47862A patent/IL47862A/xx unknown
- 1975-08-06 HU HU75WA00000316A patent/HU172435B/hu unknown
- 1975-08-12 DD DD187809A patent/DD122478A5/xx unknown
- 1975-10-27 NL NLAANVRAGE7512544,A patent/NL177612C/xx not_active IP Right Cessation
- 1975-10-30 DK DK488675A patent/DK145828C/da not_active IP Right Cessation
- 1975-11-17 YU YU02916/75A patent/YU291675A/xx unknown
- 1975-11-17 CS CS757744A patent/CS199607B2/cs unknown
- 1975-11-22 IN IN2231/CAL/1975A patent/IN143325B/en unknown
- 1975-12-08 SU SU752196602A patent/SU695531A3/ru active
- 1975-12-09 RO RO7584140A patent/RO72156A/ro unknown
- 1975-12-17 ZA ZA757846A patent/ZA757846B/xx unknown
- 1975-12-18 AU AU87664/75A patent/AU499586B2/en not_active Expired
-
1976
- 1976-01-26 US US05/652,359 patent/US4382838A/en not_active Expired - Lifetime
- 1976-01-28 JP JP829876A patent/JPS5330988B2/ja not_active Expired
- 1976-02-10 CA CA245,345A patent/CA1061688A/en not_active Expired
- 1976-02-26 IT IT48294/76A patent/IT1053650B/it active
- 1976-02-26 SE SE7602574A patent/SE408760B/xx not_active IP Right Cessation
- 1976-02-26 PL PL1976187531A patent/PL98068B1/pl unknown
- 1976-02-27 ES ES445617A patent/ES445617A1/es not_active Expired
- 1976-02-27 BE BE164701A patent/BE839008A/xx not_active IP Right Cessation
- 1976-02-27 CH CH247176A patent/CH604884A5/xx not_active IP Right Cessation
- 1976-02-27 FR FR7605549A patent/FR2302132A1/fr active Granted
- 1976-02-27 GB GB7772/76A patent/GB1539244A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
ZA757846B (en) | 1976-11-24 |
DE2508803C3 (de) | 1982-07-08 |
NL177612C (nl) | 1985-10-16 |
BE839008A (fr) | 1976-08-27 |
CA1061688A (en) | 1979-09-04 |
YU291675A (en) | 1982-05-31 |
IL47862A0 (en) | 1975-11-25 |
GB1539244A (en) | 1979-01-31 |
HU172435B (hu) | 1978-08-28 |
JPS51101466A (ja) | 1976-09-07 |
PL98068B1 (pl) | 1978-04-29 |
DK145828C (da) | 1983-08-29 |
SE7602574L (sv) | 1976-08-30 |
FR2302132B1 (ja) | 1980-08-14 |
CS199607B2 (en) | 1980-07-31 |
DD122478A5 (ja) | 1976-10-12 |
AU8766475A (en) | 1977-06-23 |
NL7512544A (nl) | 1976-08-31 |
DE2508803B2 (de) | 1978-03-09 |
CH604884A5 (ja) | 1978-09-15 |
FR2302132A1 (fr) | 1976-09-24 |
ES445617A1 (es) | 1977-10-01 |
DE2508803A1 (de) | 1976-09-09 |
DK145828B (da) | 1983-03-14 |
IL47862A (en) | 1978-07-31 |
IN143325B (ja) | 1977-11-05 |
SE408760B (sv) | 1979-07-09 |
SU695531A3 (ru) | 1979-10-30 |
AU499586B2 (en) | 1979-04-26 |
US4382838A (en) | 1983-05-10 |
DK488675A (da) | 1976-08-29 |
RO72156A (ro) | 1981-03-30 |
IT1053650B (it) | 1981-10-10 |
NL177612B (nl) | 1985-05-17 |