WO2022102411A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
WO2022102411A1
WO2022102411A1 PCT/JP2021/039707 JP2021039707W WO2022102411A1 WO 2022102411 A1 WO2022102411 A1 WO 2022102411A1 JP 2021039707 W JP2021039707 W JP 2021039707W WO 2022102411 A1 WO2022102411 A1 WO 2022102411A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
substrate
semiconductor light
translucent
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/039707
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
晃輝 坂本
和則 富士
敦司 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to CN202180075683.5A priority Critical patent/CN116458021A/zh
Priority to DE112021005241.1T priority patent/DE112021005241B4/de
Priority to US18/252,291 priority patent/US20230420909A1/en
Priority to JP2022561379A priority patent/JPWO2022102411A1/ja
Publication of WO2022102411A1 publication Critical patent/WO2022102411A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Definitions

  • This disclosure relates to a semiconductor light emitting device.
  • a semiconductor light emitting device mounted on a substrate, a driving element used for driving the semiconductor light emitting element, a semiconductor light emitting element and the driving element are sealed, and the light of the semiconductor light emitting element is transmitted.
  • the driving element includes a switching element and is electrically connected to the semiconductor light emitting element via, for example, wires and wiring.
  • the translucent member is in contact with the substrate.
  • a printed circuit board (PCB) or a ceramic substrate is used as a substrate, and for example, an epoxy resin or silicone is used as a translucent member. Therefore, excessive stress may be generated in the semiconductor light emitting device due to the large difference between the linear expansion coefficient of the substrate and the linear expansion coefficient of the translucent member.
  • a semiconductor light emitting device that solves the above problems intersects a substrate having a substrate main surface, a light emitting element main surface that is mounted on the substrate main surface and faces the same side as the substrate main surface, and the light emitting element main surface.
  • a semiconductor light emitting device having a light emitting surface facing in the direction of light, a driving element mounted on the main surface of the substrate and used to drive the semiconductor light emitting element, and a linear expansion coefficient larger than that of the substrate and described above. It is made of a material that allows light emitted from the light emitting surface to pass through, and is made of a transparent member that covers the light emitting surface and a material that has a linear expansion coefficient smaller than that of the light emitting member, and seals the semiconductor light emitting element and the driving element.
  • the sealing resin and the sealing resin are provided.
  • the sealing resin that seals the semiconductor light emitting element and the driving element is made of a material having a coefficient of linear expansion smaller than that of the translucent member.
  • the difference between the linear expansion coefficient of the sealing resin and the linear expansion coefficient of the substrate can be made smaller than the difference between the linear expansion coefficient of the translucent member and the linear expansion coefficient of the substrate. Therefore, the difference between the amount of heat shrinkage of the substrate and the amount of heat shrinkage of the encapsulating resin due to the temperature change of the semiconductor light emitting device can be made small, and the difference between the amount of thermal expansion of the substrate and the amount of heat expansion of the encapsulating resin can be made small. can. As a result, the stress generated in the semiconductor light emitting device due to the difference between the linear expansion coefficient of the translucent member and the linear expansion coefficient of the substrate can be reduced.
  • the semiconductor light emitting device it is possible to reduce the stress generated in the semiconductor light emitting device due to the difference between the linear expansion coefficient of the substrate and the linear expansion coefficient of the translucent member.
  • the perspective view of the semiconductor light emitting device of 1st Embodiment The plan view of the semiconductor light emitting device of FIG. 1 in a state where the sealing resin is omitted.
  • the back view of the semiconductor light emitting device of FIG. FIG. 2 is a cross-sectional view taken along the line 4-4 of FIG. 2 for the semiconductor light emitting device of FIG. An enlarged view of a part of the semiconductor light emitting device of FIG.
  • the back view of the semiconductor light emitting device and the translucent member of FIG. The circuit diagram of the semiconductor light emitting device of FIG.
  • Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device The perspective view of the semiconductor light emitting device of 2nd Embodiment.
  • the plan view of the semiconductor light emitting device of FIG. FIG. 19 is a cross-sectional view taken along the line 20-20 for the semiconductor light emitting device of FIG. It is explanatory drawing explaining an example of the manufacturing process about the manufacturing method of the semiconductor light emitting device of 2nd Embodiment.
  • Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device.
  • Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device.
  • FIG. 28 is a plan view of the semiconductor light emitting device of FIG. 28.
  • FIG. 29 is a cross-sectional view taken along the line 30-30 for the semiconductor light emitting device of FIG. 29. It is explanatory drawing explaining an example of the manufacturing process about the manufacturing method of the semiconductor light emitting device of 3rd Embodiment. Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device.
  • Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device Explanatory drawing explaining an example of the manufacturing process of the manufacturing method of a semiconductor device.
  • Sectional drawing of the semiconductor light emitting device of the modified example Sectional drawing of the semiconductor light emitting device of the modified example.
  • the back view of the semiconductor light emitting device of the modified example The back view of the semiconductor light emitting device of the modified example.
  • the semiconductor light emitting device 10 shown in FIG. 1 can be used, for example, in a laser system as LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging), which is an example of three-dimensional distance measurement.
  • the semiconductor light emitting device 10 may be used in a laser system for measuring a two-dimensional distance.
  • the semiconductor light emitting device 10 is formed in a rectangular flat plate shape.
  • the semiconductor light emitting device 10 has a device main surface 11 and a device back surface 12 facing opposite to each other, and a device side surface 13 to 16 facing a direction intersecting both the device main surface 11 and the device back surface 12.
  • the device side surfaces 13 to 16 face in a direction orthogonal to both the device main surface 11 and the device back surface 12.
  • the device main surface 11 and the device back surface 12 are arranged apart from each other.
  • the arrangement direction of the main surface 11 of the device and the back surface 12 of the device is defined as the z direction.
  • the two directions orthogonal to each other are defined as the x direction and the y direction, respectively.
  • the device side surfaces 13 and 14 when viewed from the z direction, are surfaces along the x direction, and the device side surfaces 15 and 16 are surfaces along the y direction.
  • the device side surfaces 13 and 14 are surfaces facing opposite to each other in the y direction, and the device side surfaces 15 and 16 are surfaces facing each other in the x direction.
  • the shape of the semiconductor light emitting device 10 when viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.
  • the semiconductor light emitting device 10 is switched by a substrate 20, a semiconductor light emitting element 60 mounted on the substrate 20, a switching element 70, a capacitor 80, and a translucent member 90 covering the semiconductor light emitting element 60. It includes an element 70, a capacitor 80, and a sealing resin 100 that seals a translucent member 90.
  • the switching element 70 and the capacitor 80 are examples of driving elements used to drive the semiconductor light emitting element 60.
  • the outer surface of the semiconductor light emitting device 10 is composed of a substrate 20, a translucent member 90, and a sealing resin 100. Both the translucent member 90 and the sealing resin 100 are laminated on the substrate 20.
  • the substrate 20 is made of, for example, a PCB substrate or a ceramic substrate.
  • the PCB 20 is used as the substrate 20.
  • the PCB substrate includes, for example, an insulating layer made of glass epoxy resin or the like, a conductive layer made of Cu (copper) or the like, and a connecting via made of Cu or the like and connecting a plurality of conductive layers to each other.
  • the insulating layer will be the substrate 20
  • the conductive layer will be the main surface side wiring 30 and the exterior electrode 50
  • the connecting via will be described as the connecting wiring 40.
  • the substrate 20 is formed in a rectangular flat plate shape with the z direction as the thickness direction. Therefore, the z direction can be said to be the thickness direction of the substrate 20.
  • the substrate 20 is arranged closer to the back surface 12 of the semiconductor light emitting device 10 than the main surface 11 of the device in the z direction.
  • the substrate 20 constitutes a back surface 12 of the device and a part of each of the side surfaces 13 to 16 of the device in the z direction.
  • the substrate 20 has a substrate main surface 21 and a substrate back surface 22 facing opposite to each other in the z direction, and substrate side surfaces 23 to 26 facing directions orthogonal to both the substrate main surface 21 and the substrate back surface 22. ..
  • the substrate main surface 21 faces the same side as the device main surface 11, and the substrate back surface 22 faces the same side as the device back surface 12.
  • the back surface 22 of the substrate constitutes the back surface 12 of the device.
  • the board side surface 23 faces the same side as the device side surface 13
  • the board side surface 24 faces the same side as the device side surface 14
  • the board side surface 25 faces the same side as the device side surface 15, and the board side surface 26 faces the same side as the device side surface 16. It is suitable.
  • the shape of the substrate 20 when viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.
  • the back surface 22 of the substrate is provided with an exterior electrode 50 that serves as an external terminal for electrically connecting the semiconductor light emitting device 10 to, for example, the wiring of the circuit board when the semiconductor light emitting device 10 is mounted on the circuit board.
  • the back surface 22 of the substrate is a mounting surface when the semiconductor light emitting device 10 is mounted on a circuit board, for example.
  • the semiconductor light emitting device 10 has a surface mount type package structure.
  • the exterior electrode 50 is composed of, for example, a laminated body of a Ni (nickel) layer, a Pd (palladium) layer, and an Au (gold) layer.
  • the exterior electrode 50 has a connection electrode 51, a power supply electrode 52, a control electrode 53, and a ground electrode 54.
  • the back surface side insulating layer 22a is formed on the back surface side surface 22 of the substrate.
  • the back surface side insulating layer 22a is formed on a portion of the back surface of the substrate 22 other than the exterior electrode 50.
  • the back surface insulating layer 22a is made of, for example, a waterproof insulating coating material.
  • the translucent member 90 is composed of a member capable of transmitting light emitted from a semiconductor light emitting element 60 (details, a light emitting element side surface 63 which is a light emitting surface to be described later).
  • the light emitted from the light emitting element 60 is emitted to the outside of the semiconductor light emitting device 10.
  • the translucent member 90 is arranged on the substrate main surface 21 of the substrate 20.
  • the translucent member 90 constitutes a part of the side surface 13 of the device. That is, the semiconductor light emitting device 10 of the present embodiment is configured to emit light from the side surface 13 of the device.
  • the translucent member 90 When viewed from the z direction, the translucent member 90 is arranged at both ends of the main surface 21 of the substrate in the y direction, whichever is closer to the side surface 23 of the substrate. As can be seen from FIG. 1, the size of the translucent member 90 is smaller than the size of the substrate 20 and the sealing resin 100. Further, the size of the translucent member 90 is smaller than the size of the switching element 70.
  • the translucent member 90 is formed in a rectangular flat plate shape.
  • the translucent member 90 has a translucent main surface 91 and a translucent back surface 92 facing opposite to each other in the z direction, and translucent side surfaces 93 to 96 facing both orthogonal to both the translucent main surface 91 and the translucent back surface 92. And have.
  • the translucent main surface 91 faces the same side as the device main surface 11, and the translucent back surface 92 faces the same side as the device back surface 12.
  • the translucent side surface 93 faces the same side as the device side surface 13, the translucent side surface 94 faces the same side as the device side surface 14, the translucent side surface 95 faces the same side as the device side surface 15, and the translucent side surface 96 faces the device side surface 16. Facing the same side as.
  • the translucent side surface 93 is exposed to the outside of the semiconductor light emitting device 10, and constitutes a part of the device side surface 13.
  • the translucent side surface 93 is an example of a translucent surface.
  • the sealing resin 100 is formed in a rectangular flat plate shape with the z direction as the thickness direction. Therefore, the thickness direction of the sealing resin 100 can be said to be the thickness direction of the substrate 20.
  • the sealing resin 100 is formed on the substrate main surface 21 of the substrate 20. Therefore, the sealing resin 100 is in contact with the main surface 21 of the substrate.
  • the sealing resin 100 constitutes a main surface 11 of the device and a part of each of the side surfaces 13 to 16 of the device in the z direction.
  • the thickness of the sealing resin 100 (the size in the z direction) is thicker than the thickness of the substrate 20.
  • the thickness of the sealing resin 100 is thicker than that of the translucent member 90.
  • the thickness of the sealing resin 100 is 0.6 mm or more and 0.8 mm or less.
  • the thickness of the sealing resin 100 can be arbitrarily changed, and may be, for example, less than or equal to the thickness of the substrate 20.
  • the sealing resin 100 has a resin main surface 101 and a resin back surface 102 facing opposite to each other in the z direction, and a resin side surface 103 facing a direction orthogonal to both the resin main surface 101 and the resin back surface 102. It has ⁇ 106 and.
  • the resin main surface 101 faces the same side as the device main surface 11, and the resin back surface 102 faces the same side as the device back surface 12.
  • the resin main surface 101 constitutes the device main surface 11.
  • the resin back surface 102 is a surface of the substrate 20 in contact with the substrate main surface 21.
  • the resin side surface 103 faces the same side as the device side surface 13
  • the resin side surface 104 faces the same side as the device side surface 14
  • the resin side surface 105 faces the same side as the device side surface 14
  • the resin side surface 106 faces the same side as the device side surface 16. It is suitable.
  • the shape of the sealing resin 100 as viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction. As shown in FIG. 1, in the present embodiment, the resin side surface 103 and the substrate side surface 23 are flush with each other, the resin side surface 104 and the substrate side surface 24 are flush with each other, and the resin side surface 105 and the substrate side surface 25 are flush with each other.
  • the resin side surface 106 and the substrate side surface 26 are flush with each other.
  • the device side surface 13 is configured from the resin side surface 103, the translucent side surface 93, and the substrate side surface 23
  • the device side surface 14 is configured from the resin side surface 104 and the substrate side surface 24, and the resin side surface 105 and the substrate side surface are formed.
  • the device side surface 15 is configured from 25, and the device side surface 16 is configured from the resin side surface 106 and the substrate side surface 26.
  • the shapes of the sealing resin 100 and the substrate 20 as viewed from the z direction can be arbitrarily changed.
  • the shapes of the encapsulating resin 100 and the substrate 20 when viewed from the z direction may be rectangular in which the x direction is the long side direction and the y direction is the short side direction, or may be a square shape. May be good.
  • the main surface side wiring 30 has a first main surface side wiring 31, a second main surface side wiring 32, a third main surface side wiring 33, and a fourth main surface side wiring 34. These wirings 31 to 34 are arranged apart from each other when viewed from the z direction.
  • the first main surface side wiring 31 is a wiring mainly on which the semiconductor light emitting element 60 is mounted.
  • the first main surface side wiring 31 is arranged at both ends of the substrate main surface 21 in the y direction, whichever is closer to the substrate side surface 23.
  • the first main surface side wiring 31 extends over most of the substrate main surface 21 in the x direction.
  • the first main surface side wiring 31 has a protruding portion 31a that protrudes toward the substrate side surface 24 in the y direction at the center of the x direction.
  • the shape of the protruding portion 31a viewed from the z direction is a trapezoidal shape that tapers from the substrate side surface 23 toward the substrate side surface 24.
  • a semiconductor light emitting element 60 is mounted on the protrusion 31a. More specifically, the semiconductor light emitting device 60 is bonded to the protrusion 31a by a conductive bonding material SD (see FIG. 4) such as solder or Ag (silver) paste.
  • the second main surface side wiring 32 is a wiring mainly on which the switching element 70 is mounted.
  • the second main surface side wiring 32 is arranged so as to be adjacent to the first main surface side wiring 31 of the substrate main surface 21 in the y direction, and is arranged substantially in the center of the board main surface 21 in the y direction.
  • the area of the second main surface side wiring 32 seen from the z direction is larger than the area of the other wirings 31, 33, 34 seen from the z direction.
  • a recess 32a is formed at both ends of the second main surface side wiring 32 in the y direction, whichever is closer to the side surface 23 of the substrate and at the center in the x direction.
  • the recess 32a is formed so as to accommodate the tip end portion of the protrusion 31a.
  • the switching element 70 is mounted on the portion of the wiring 32 on the second main surface side that is closer to the side surface 24 of the substrate than the recess 32a. More specifically, the switching element 70 is joined to the second main surface side wiring 32 by the conductive bonding material SD.
  • Both the third main surface side wiring 33 and the fourth main surface side wiring 34 are wirings that are electrically connected to the switching element 70. These wirings 33 and 34 are arranged on the side opposite to the first main surface side wiring 31 with respect to the second main surface side wiring 32 in the y direction. Specifically, these wirings 33 and 34 are arranged closer to the side surface 24 of the board than the wiring 32 on the second main surface side of the main surface 21 of the board in the y direction. Further, these wirings 33 and 34 are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction. The third main surface side wiring 33 is arranged closer to the board side surface 25 than the fourth main surface side wiring 34.
  • the length of the fourth main surface side wiring 34 in the x direction is longer than the length of the third main surface side wiring 33 in the x direction and shorter than the length of the switching element 70 in the x direction.
  • the length of the fourth main surface side wiring 34 in the y direction is equal to the length of the third main surface side wiring 33 in the y direction.
  • the second wire W2 described later can be connected to the fourth main surface side wiring 34, and the third main surface side wiring 34 described later. As long as the wire W3 can be connected to the third main surface side wiring 33, it can be arbitrarily changed.
  • the third main surface side wiring 33 is an example of the main surface side control wiring electrically connected to the control electrode 75 of the switching element 70.
  • the fourth main surface side wiring 34 is an example of the main surface side drive wiring that is electrically connected to the drive electrode (second drive electrode 74) of the switching element 70.
  • the substrate 20 has a connection wiring 40 provided so as to penetrate the substrate 20 in the z direction.
  • the connection wiring 40 connects the main surface side wiring 30 and the exterior electrode 50. Therefore, the connection wiring 40 electrically connects the semiconductor light emitting element 60, the switching element 70, and the exterior electrode 50.
  • the connection wiring 40 includes connection wirings 41, 42, 43, 44.
  • the first connection wiring 41 is provided at a position where both the first main surface side wiring 31 of the substrate main surface 21 and the connection electrode 51 of the substrate back surface 22 overlap with each other when viewed from the z direction.
  • the first main surface side wiring 31 and the connection electrode 51 are electrically connected.
  • a plurality of first connection wirings 41 are provided.
  • the plurality of first connection wirings 41 are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction.
  • the second connection wiring 42 is provided at a position where both the second main surface side wiring 32 of the substrate main surface 21 and the power supply electrode 52 of the substrate back surface 22 overlap when viewed from the z direction.
  • the second main surface side wiring 32 and the power supply electrode 52 are electrically connected.
  • a plurality of second connection wirings 42 are provided.
  • the plurality of second connection wirings 42 are arranged in a grid pattern separated from each other in the x-direction and the y-direction.
  • the third connection wiring 43 shown in FIG. 3 is provided at a position overlapping both the third main surface side wiring 33 of the substrate main surface 21 shown in FIG. 2 and the control electrode 53 of the substrate back surface 22 when viewed from the z direction. Both the third main surface side wiring 33 and the control electrode 53 are electrically connected.
  • the fourth connection wiring 44 is provided at a position where both the fourth main surface side wiring 34 of the substrate main surface 21 and the ground electrode 54 of the substrate back surface 22 overlap with each other when viewed from the z direction.
  • the fourth main surface side wiring 34 and the ground electrode 54 are electrically connected.
  • the number of each of the connection wirings 41 to 44 can be arbitrarily changed.
  • the semiconductor light emitting element 60 mounted on the protruding portion 31a of the first main surface side wiring 31 (both see FIG. 2) is formed in a rectangular flat plate shape having the z direction as the thickness direction. That is, it can be said that the thickness direction of the semiconductor light emitting device 60 is the thickness direction of the substrate 20.
  • the semiconductor light emitting device 60 is a light source of the semiconductor light emitting device 10 and is a semiconductor laser element.
  • An example of a semiconductor laser device is a pulsed laser diode.
  • GaAs gallium arsenide
  • the semiconductor light emitting device 60 for example, one having an oscillation wavelength of 905 nm, an optical output of 75 W or more, and a pulse width of several tens of ns or less is used.
  • the semiconductor light emitting device 60 has a specification of an optical output of 150 W or more and a pulse width of 10 ns or less. More preferably, the semiconductor light emitting device 60 has a specification of a pulse width of 5 ns or less.
  • the semiconductor light emitting device 60 has a light emitting element main surface 61 and a light emitting element back surface 62 facing opposite sides in the z direction.
  • the light emitting element main surface 61 faces the same side as the substrate main surface 21, and the light emitting element back surface 62 faces the same side as the substrate back surface 22.
  • the shapes of the light emitting element main surface 61 and the light emitting element back surface 62 when viewed from the z direction are rectangular shapes having a long side direction and a short side direction.
  • the semiconductor light emitting element 60 is arranged on the main surface 21 of the substrate so that the long side direction is along the y direction and the short side direction is along the x direction.
  • the semiconductor light emitting device 60 has light emitting element side surfaces 63 to 66 facing in a direction intersecting the light emitting device main surface 61.
  • the light emitting element side surfaces 63 to 66 face in a direction orthogonal to both the light emitting element main surface 61 and the light emitting element back surface 62.
  • the light emitting element side surface 63 constitutes a light emitting surface from which the semiconductor light emitting element 60 emits light. Therefore, it can be said that the semiconductor light emitting device 60 has a light emitting surface facing in a direction intersecting the main surface 61 of the light emitting element.
  • the light emitting element side surface 63 faces the same side as the substrate side surface 23 (device side surface 13).
  • the semiconductor light emitting device 60 is arranged so that the light emitting surface faces the same side as the substrate side surface 23 (device side surface 13). Therefore, as shown in FIG. 1, the semiconductor light emitting device 10 emits light from the side surface 13 of the device. As shown in FIG. 5, the light emitting element side surface 64 faces the same side as the substrate side surface 24, the light emitting element side surface 65 faces the same side as the substrate side surface 25, and the light emitting element side surface 66 faces the same side as the substrate side surface 26. ..
  • the semiconductor light emitting device 60 has a first electrode 67 formed on the main surface 61 of the light emitting element and a second electrode 68 formed on the back surface 62 of the light emitting element.
  • the first electrode 67 is an anode and the second electrode 68 is a cathode.
  • the first electrode 67 is an example of the main surface side electrode of the semiconductor light emitting device 60.
  • the shape of the first electrode 67 viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.
  • the first electrode 67 is one size smaller than the main surface 61 of the light emitting element when viewed from the z direction.
  • the second electrode 68 is connected to the first main surface side wiring 31 via the conductive bonding material SD. That is, the second electrode 68 is electrically connected to the first main surface side wiring 31.
  • the switching element 70 mounted on the second main surface side wiring 32 is formed in a rectangular flat plate shape having the z direction as the thickness direction. That is, it can be said that the thickness direction of the switching element 70 is the thickness direction of the substrate 20.
  • the switching element 70 is an element for controlling the current to the semiconductor light emitting element 60. That is, the switching element 70 is an element that drives the semiconductor light emitting element 60.
  • the shape of the switching element 70 when viewed from the z direction is a rectangular shape having a long side direction and a short side direction. In the present embodiment, the switching element 70 is arranged so that the long side direction is along the x direction and the short side direction is along the y direction.
  • the switching element 70 for example, a transistor made of Si (silicon), SiC (silicon carbide), GaN (gallium nitride), or the like is used.
  • the switching element 70 is made of GaN or SiC, it is suitable for speeding up switching.
  • an N-type MOSFET Metal-Oxide-Semiconductor Field-Effect-Transistor made of Si is used as the switching element 70.
  • the area of the switching element 70 When viewed from the z direction, the area of the switching element 70 is larger than the area of the semiconductor light emitting element 60. In other words, the area of the semiconductor light emitting device 60 is smaller than the area of the switching element 70 when viewed from the z direction. More specifically, the length of the semiconductor light emitting device 60 in the x direction is shorter than the length of the switching element 70 in the x direction, and the length of the semiconductor light emitting device 60 in the y direction is shorter than the length of the switching element 70 in the y direction. .. In the present embodiment, the thickness of the switching element 70 is 0.2 mm or more and 0.3 mm or less.
  • the size of the switching element 70 is set according to the type of material constituting the switching element such as Si, SiC, and GaN and the specifications of the semiconductor light emitting device 10. In the present embodiment, since the switching element 70 is composed of Si, the size of the switching element 70 becomes large.
  • the switching element 70 has a switching element main surface 71 and a switching element back surface 72 facing opposite sides in the z direction.
  • the switching element 70 has a first drive electrode 73 formed on the back surface 72 of the switching element, and a second drive electrode 74 and a control electrode 75 formed on the main surface 71 of the switching element.
  • the first drive electrode 73 is a drain electrode
  • the second drive electrode 74 is a source electrode
  • the control electrode 75 is a gate electrode.
  • the switching element 70 is a vertical MOSFET in which drive electrodes are formed on both the main surface 71 of the switching element and the back surface 72 of the switching element.
  • the switching element 70 is not limited to the vertical MOSFET, and may be a horizontal MOSFET in which the first drive electrode 73, the second drive electrode 74, and the control electrode 75 are formed on the main surface 71 of the switching element.
  • the first drive electrode 73 is formed over the entire back surface 72 of the switching element.
  • the first drive electrode 73 is connected to the second main surface side wiring 32 via the conductive bonding material SD. That is, the first drive electrode 73 is electrically connected to the second main surface side wiring 32.
  • a plurality of (two in this embodiment) of the second drive electrodes 74 are formed on the switching element main surface 71, and are formed over most of the switching element main surface 71.
  • the plurality of second drive electrodes 74 are arranged apart from each other in the y direction.
  • the control electrode 75 is formed in one of the four corners of the switching element main surface 71.
  • the switching element 70 is arranged so that the control electrode 75 is located near the substrate side surface 24 and the substrate side surface 26 when viewed from the z direction.
  • each first wire W1 is formed so that the distance between the adjacent first wires W1 in the x direction when viewed from the z direction gradually increases from the semiconductor light emitting device 60 toward the switching element 70. ..
  • the second drive electrode 74 of the switching element 70 and the fourth main surface side wiring 34 are electrically connected by one or a plurality of (two in this embodiment) second wire W2. Specifically, since the second drive electrode 74 and the fourth main surface side wiring 34 are in a positional relationship in which they overlap each other when viewed from the y direction, the plurality of second wires W2 are arranged at intervals in the x direction. It is also formed so as to extend along the y direction when viewed from the z direction.
  • the control electrode 75 of the switching element 70 and the third main surface side wiring 33 are electrically connected by one third wire W3. Specifically, since the control electrode 75 and the third main surface side wiring 33 overlap each other when viewed from the y direction, the third wire W3 extends along the y direction when viewed from the z direction. Is formed in.
  • the second wire W2 and the third wire W3 are arranged on the opposite side of the switching element 70 from the first wire W1. That is, the second wire W2 and the third wire W3 extend from the main surface 71 of the switching element to the side opposite to the semiconductor light emitting element 60 in the y direction.
  • the wires W1 to W3 are examples of wires electrically connected to the switching element 70.
  • the semiconductor light emitting device 10 includes a plurality of (two in this embodiment) capacitors 80.
  • the capacitor 80 constitutes a capacitor bank for temporarily storing an electric charge that should be a current that energizes the semiconductor light emitting device 60.
  • the capacity and number of the capacitors 80 are set according to the output of the semiconductor light emitting device 60.
  • the two capacitors 80 are arranged at intervals with respect to the semiconductor light emitting device 60 on both sides of the semiconductor light emitting device 60 in the x direction.
  • the plurality of capacitors 80 are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction. When viewed from the x direction, each capacitor 80 is arranged at a position overlapping with the semiconductor light emitting device 60.
  • Each capacitor 80 is arranged so as to straddle between the first main surface side wiring 31 and the second main surface side wiring 32 in the y direction, and the first main surface side wiring 31 and the second main surface side wiring 32. It is installed in both. In this embodiment, the two capacitors 80 are connected to both ends of each of the wirings 31 and 32 in the x direction.
  • the plurality of capacitors 80 have the same structure as each other.
  • Each capacitor 80 is formed in a rectangular parallelepiped shape having a longitudinal direction and a lateral direction.
  • a first terminal 81 is provided at one end of each capacitor 80 in the longitudinal direction, and a second terminal 82 is provided at the other end.
  • Each capacitor 80 is arranged so that the longitudinal direction is the y direction and the lateral direction is the x direction.
  • the first terminal 81 of each capacitor 80 is joined to the first main surface side wiring 31 by the conductive bonding material SD
  • the second terminal 82 of each capacitor 80 is joined to the second main surface side wiring 32 by the conductive bonding material SD. It is joined to. That is, each capacitor 80 is electrically connected to the first main surface side wiring 31 and the second main surface side wiring 32. In other words, each capacitor 80 is electrically connected to the second electrode 68 of the semiconductor light emitting device 60 and the first drive electrode 73 of the switching element 70.
  • Each capacitor 80 has a capacitor main surface 83 facing the same side as
  • each capacitor 80 for example, a ceramic capacitor or a Si capacitor is used.
  • the thickness (magnitude in the z direction) of each capacitor 80 is thicker than the thickness of each of the semiconductor light emitting element 60, the translucent member 90, and the switching element 70.
  • the thickness of each capacitor 80 is about 0.3 mm or more and 0.8 mm or less.
  • the thickness of each capacitor 80 is 0.1 mm or more and 0.3 mm or less.
  • a ceramic capacitor is used as each capacitor 80, and the thickness of each capacitor 80 is about 0.5 mm. Therefore, the capacitor main surface 83 is located closer to the resin main surface 101 than the resin back surface 102 of the sealing resin 100 in the z direction.
  • the semiconductor light emitting element 60, the translucent member 90, the switching element 70, the plurality of capacitors 80, and the wires W1 to W3 are provided in the sealing resin 100.
  • the sealing resin 100 seals the semiconductor light emitting element 60, the translucent member 90, the switching element 70, the plurality of capacitors 80, and the wires W1 to W3.
  • the sealing resin 100 seals the semiconductor light emitting element 60 and the driving element together with the translucent member 90. Further, it can be said that the sealing resin 100 seals the semiconductor light emitting element 60 and the driving element together with the wire connected to the switching element 70. More specifically, it can be said that the sealing resin 100 seals the semiconductor light emitting element 60 and the driving element together with the wires connected to the switching element 70 and the main surface side wiring 30.
  • the semiconductor light emitting device 60 and the translucent member 90 will be described with reference to FIGS. 4 to 7.
  • the semiconductor light emitting element 60 is shown by a broken line for convenience in order to facilitate the distinction between the translucent member 90 and the semiconductor light emitting element 60.
  • the translucent member 90 is integrally formed with the semiconductor light emitting device 60.
  • the light-transmitting member 90 is formed so as to cover the side surface 63 of the light-emitting element, which is the light-transmitting surface of the semiconductor light-emitting element 60.
  • the translucent member 90 covers the outer peripheral portion of the light emitting element main surface 61 of the semiconductor light emitting element 60 and the light emitting element side surfaces 63 to 66 of the semiconductor light emitting element 60.
  • the length XA of the translucent member 90 in the x direction is longer than the length XC of the semiconductor light emitting device 60 in the x direction.
  • the length YA of the translucent member 90 in the y direction is longer than the length YC of the semiconductor light emitting device 60 in the y direction.
  • the length ZA of the translucent member 90 in the z direction is longer than the length ZC of the semiconductor light emitting device 60 in the z direction. In other words, the thickness of the translucent member 90 is thicker than that of the semiconductor light emitting device 60.
  • the length XA of the translucent member 90 is shorter than the length XB of the switching element 70 in the x direction (see FIG. 2).
  • the length YA of the translucent member 90 is shorter than the length YB of the switching element 70 in the y direction (see FIG. 2).
  • the length ZA of the translucent member 90 is shorter than the length ZB of the switching element 70 in the z direction (see FIG. 4).
  • the thickness of the translucent member 90 is thinner than the thickness of the switching element 70.
  • the thickness (magnitude in the z direction) of the translucent member 90 is larger than 0.1 mm and less than 0.2 mm. That is, in the present embodiment, the thickness of the translucent member 90 is thinner than the thickness of the switching element 70 (see FIG. 4).
  • the length XC of the semiconductor light emitting device 60 in the x direction is about 0.4 mm.
  • the length YC of the semiconductor light emitting device 60 in the y direction is about 0.6 mm.
  • the thickness of the semiconductor light emitting device 60 (length ZC in the z direction) is about 0.1 mm.
  • the distance HA between the substrate main surface 21 and the translucent main surface 91 of the translucent member 90 is the distance HB between the substrate main surface 21 and the switching element main surface 71 of the switching element 70. Shorter than. Further, the distance HA is shorter than the distance HC between the substrate main surface 21 and the capacitor main surface 83 of the capacitor 80.
  • the semiconductor light emitting element 60 is arranged unevenly in the y direction with respect to the translucent member 90. More specifically, the semiconductor light emitting element 60 is biased with respect to the translucent member 90 so as to be closer to the translucent side surface 94 than the translucent side surface 93 in the y direction. Therefore, the distance D1 between the translucent side surface 93 of the translucent member 90 and the light emitting element side surface 63 (light emitting surface) of the semiconductor light emitting element 60 is the y direction of the translucent side surface 94 and the light emitting element side surface 64. The distance between is longer than D2. As a result, the semiconductor light emitting device 60 can be brought closer to the switching element 70 (see FIG.
  • the distance D1 is larger than the distance D3 between the translucent side surface 95 and the light emitting element side surface 65 in the x direction and the distance D4 between the translucent side surface 96 and the light emitting element side surface 66 in the x direction.
  • the length in the x direction and the length in the z direction of the translucent portion 97 between the translucent side surface 93 and the light emitting element side surface 63 of the translucent member 90 are the lengths in the x direction of the semiconductor light emitting element 60. It is larger than the XC and the length ZC in the z direction (see FIG. 6).
  • the translucent portion 97 is a portion that covers the side surface 63 of the light emitting element, which is the light emitting surface of the semiconductor light emitting element 60, and is a portion that transmits light emitted from the light emitting surface. That is, the translucent portion 97 is a portion through which the light from the semiconductor light emitting element 60 passes.
  • the translucent portion 97 has a translucent side surface 93 that serves as a translucent surface.
  • the length of the translucent portion 97 in the x direction is equal to the length XA of the translucent member 90 in the x direction
  • the length of the translucent portion 97 in the z direction is the length of the translucent member 90 in the z direction. Is equal to ZA.
  • the cover portion 98 between the translucent side surface 94 and the light emitting element side surface 64 of the translucent member 90 protrudes from the protruding portion 31a of the first main surface side wiring 31 when viewed from the z direction.
  • the cover portion 98 protrudes from the tip end portion of the protruding portion 31a toward the second main surface side wiring 32 in the y direction.
  • the positional relationship between the translucent member 90 and the first main surface side wiring 31 as viewed from the z direction can be arbitrarily changed.
  • the translucent member 90 may be arranged so that the cover portion 98 does not protrude from the protruding portion 31a of the first main surface side wiring 31 when viewed from the z direction.
  • each capacitor 80 When viewed from the z direction, each capacitor 80 is arranged at a distance from the translucent member 90 in the x direction. Therefore, the sealing resin 100 is interposed between the translucent member 90 and each capacitor 80.
  • the back surface 62 of the light emitting element of the semiconductor light emitting element 60 is exposed from the translucent member 90 in the z direction. As shown in FIG. 4, the back surface 62 of the light emitting element of the semiconductor light emitting device 60 and the translucent back surface 92 of the translucent member 90 are flush with each other.
  • the translucent member 90 has an opening 99 that exposes the light emitting element main surface 61 of the semiconductor light emitting element 60 in the z direction.
  • the opening 99 exposes the first electrode 67 formed on the main surface 61 of the light emitting element in the z direction.
  • the shape of the opening 99 when viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.
  • the opening 99 exposes the entire first electrode 67 in the z direction.
  • the shape of the opening 99 when viewed from the z direction can be arbitrarily changed, and may be, for example, a circular shape or an elliptical shape.
  • each first wire W1 is connected to the first electrode 67 exposed from the opening 99. That is, the translucent member 90 is provided with an opening 99 so as not to interfere with each first wire W1. As shown in FIG. 4, the sealing resin 100 is embedded in the opening 99. Therefore, it can be said that each first wire W1 is sealed by the sealing resin 100.
  • the translucent main surface 91 and the translucent side surfaces 94 to 96 (see FIG. 5) of the translucent member 90 are covered with the sealing resin 100.
  • the translucent back surface 92 and the translucent side surface 93 (light emitting surface) of the translucent member 90 are not covered with the sealing resin 100.
  • the translucent back surface 92 may be covered with the sealing resin 100.
  • a glass epoxy resin is used for the insulating layer of the substrate 20 that electrically insulates the main surface side wiring 30, the exterior electrode 50, and the connection wiring 40 from each other.
  • the coefficient of linear expansion of the glass epoxy resin is, for example, 12 ppm / ° C. or higher and 17 ppm / ° C. or lower.
  • the coefficient of linear expansion of the insulating layer of the substrate 20 corresponds to the coefficient of linear expansion of the substrate 20.
  • the semiconductor light emitting device 60 is mainly composed of GaAs.
  • the coefficient of linear expansion of GaAs is about 5.7 ppm / ° C.
  • the switching element 70 is mainly composed of Si.
  • the coefficient of linear expansion of Si is 3.3 ppm / ° C.
  • Each wire W1 to W3 is mainly composed of Au or Cu.
  • the coefficient of linear expansion of Au is 14.3 ppm / ° C.
  • the coefficient of linear expansion of Cu is 16.3 ppm / ° C.
  • the translucent member 90 is made of a material having electrical insulation and translucency.
  • the translucent member 90 is made of, for example, a resin material having a light transmittance of 80% or more.
  • the translucent member 90 is made of a resin material having a light transmittance of more than 80%. More specifically, the translucent member 90 is made of a resin material having a wavelength of 400 nm or more and a light transmittance of more than 80%.
  • the translucent member 90 is made of, for example, a transparent epoxy resin, a polycarbonate resin, or an acrylic resin.
  • the coefficient of linear expansion of such a translucent member 90 is larger than the coefficient of linear expansion of the substrate 20.
  • an epoxy resin is used as the translucent member 90.
  • the coefficient of linear expansion of the epoxy resin is, for example, about 64 ppm / ° C., and the glass transition temperature is, for example, about 120 ° C.
  • the sealing resin 100 is made of a material having electrical insulating properties and light-shielding properties.
  • the sealing resin 100 is made of, for example, a material having a linear expansion coefficient larger than the linear expansion coefficient of the substrate 20 and smaller than the linear expansion coefficient of the translucent member 90. That is, the sealing resin 100 is made of a material in which the difference between the linear expansion coefficient of the sealing resin 100 and the linear expansion coefficient of the substrate 20 is smaller than the difference between the linear expansion coefficient of the translucent member 90 and the linear expansion coefficient of the substrate 20.
  • the coefficient of linear expansion of the sealing resin 100 is preferably 20 ppm / ° C. or less, for example. In one example, the coefficient of linear expansion of the sealing resin 100 is about 20 ppm / ° C.
  • the coefficient of linear expansion of the sealing resin 100 may be equal to or less than the coefficient of linear expansion of the substrate 20.
  • the sealing resin 100 is made of a black epoxy resin.
  • the sealing resin 100 contains a filler.
  • An example of a filler is silica (SiO 2 ). Therefore, the glass transition temperature of the sealing resin 100 is higher than the glass transition temperature of the translucent member 90.
  • the glass transition temperature of the sealing resin 100 is, for example, 150 ° C. or higher and 200 ° C. or lower.
  • circuit configuration of semiconductor light emitting device The circuit configuration of the semiconductor light emitting device 10 described above will be described with reference to FIG. FIG. 8 shows the circuit configuration of the laser system LS in which the semiconductor light emitting device 10 is used.
  • the laser system LS includes a semiconductor light emitting device 10, a drive power supply DV, a current limiting resistance R, a diode D, and a driver circuit PM.
  • the drive power supply DV is a DC power supply having a positive electrode and a negative electrode, and supplies electric power to the semiconductor light emitting device 10.
  • the current limiting resistance R is provided between the positive electrode of the drive power supply DV and the semiconductor light emitting device 10, and limits the current flowing from the drive power supply DV to the semiconductor light emitting device 10.
  • the diode D is connected in antiparallel to the semiconductor light emitting device 60 to prevent backflow of current to the semiconductor light emitting device 60.
  • As the diode D for example, a Schottky barrier diode is used.
  • the driver circuit PM outputs a control signal for controlling the on / off of the switching element 70 to the control electrode 75 of the switching element 70.
  • the driver circuit PM is, for example, a rectangular wave oscillation circuit that generates a pulsed control signal.
  • the semiconductor light emitting element 60 and the switching element 70 are connected in series. Specifically, the first electrode 67 (anode electrode) of the semiconductor light emitting device 60 and the second drive electrode 74 (source electrode) of the switching element 70 are electrically connected. The first drive electrode 73 (drain electrode) of the switching element 70 is electrically connected to the power supply electrode 52. The second electrode 68 (cathode electrode) of the semiconductor light emitting device 60 is electrically connected to the connection electrode 51.
  • the capacitor 80 is connected in parallel with a series of the semiconductor light emitting element 60 and the switching element 70. Specifically, the first terminal 81 of the capacitor 80 is electrically connected to the second electrode 68 of the semiconductor light emitting device 60, and the second terminal 82 of the capacitor 80 is electrically connected to the first drive electrode 73 of the switching element 70. Is connected.
  • the second drive electrode 74 of the switching element 70 is electrically connected to the ground electrode 54.
  • the anode electrode of the diode D is electrically connected to the connection electrode 51, and the cathode electrode of the diode D is connected to the ground electrode 54. As a result, the diode D is connected in antiparallel to the semiconductor light emitting device 60.
  • the control electrode 75 of the switching element 70 is electrically connected to the control electrode 53.
  • the driver circuit PM is electrically connected to the control electrode 53. Therefore, the driver circuit PM is electrically connected to the control electrode 75 of the switching element 70. Further, each of the negative electrode of the driver circuit PM and the drive power supply DV is connected to the ground.
  • the laser system LS with such a configuration operates as follows. That is, when the switching element 70 is turned off by the control signal of the driver circuit PM, the capacitor 80 is stored by the drive power supply DV. When the switching element 70 is turned on by the control signal of the driver circuit PM, the capacitor 80 is discharged and a current flows through the semiconductor light emitting element 60. As a result, the semiconductor light emitting device 60 emits pulsed laser light.
  • the method for manufacturing the semiconductor light emitting device 10 includes, for example, a translucent member forming step, an element mounting step, a wire forming step, a resin layer forming step, and a mirror surface processing step.
  • the translucent member forming step, the element mounting step, the wire forming step, the resin layer forming step, and the mirror surface processing step are carried out in this order.
  • the translucent member forming step is a step of integrally forming the translucent member in the semiconductor light emitting element 60, and includes a light emitting element mounting step, a translucent layer forming step, a support substrate deletion step, an opening forming step, and a cutting step. are doing.
  • the light emitting element mounting step, the translucent layer forming step, the support substrate removing step, the opening forming step, and the cutting step are carried out in this order.
  • a flat plate-shaped support substrate 800 having the z direction as the thickness direction is prepared.
  • the support substrate 800 is made of a resin substrate or a metal substrate, and has a substrate main surface 801 facing one side in the thickness direction of the support substrate 800.
  • a tape 810 for mounting an element is attached to the main surface 801 of the substrate.
  • the semiconductor light emitting element 60 is mounted on the tape main surface 811 of the tape 810 facing the same side as the substrate main surface 801. In this case, the light emitting element back surface 62 of the semiconductor light emitting device 60 is in contact with the tape main surface 811.
  • a translucent layer 890 is formed on the tape main surface 811.
  • the translucent layer 890 is formed over, for example, the entire surface of the tape main surface 811.
  • the translucent layer 890 seals the semiconductor light emitting device 60.
  • the translucent layer 890 is made of a material having translucency and electrical insulation.
  • the translucent layer 890 is a layer corresponding to the translucent member 90, and is formed of the same material as the translucent member 90.
  • the translucent layer 890 is made of a transparent epoxy resin. Since the translucent layer 890 is formed on the main surface 811 of the tape, it does not cover the back surface 62 of the light emitting element of the semiconductor light emitting element 60.
  • the translucent layer 890 is formed by, for example, compression molding or transfer molding.
  • the support substrate 800 and the tape 810 are deleted from the semiconductor light emitting element 60 and the translucent layer 890.
  • a method for removing the support substrate 800 and the tape 810 a method of separating the support substrate 800 and the tape 810 from the semiconductor light emitting element 60 and the translucent layer 890 by a debonding device is used.
  • the support substrate 800 and the tape 810 may be removed by mechanical grinding.
  • the back surface 62 of the light emitting device of the semiconductor light emitting device 60 is exposed from the light transmitting layer 890 in the z direction. Further, the back surface 62 of the light emitting element is flush with the surface of the translucent layer 890 facing the same side as the back surface 62 of the light emitting element.
  • an opening 899 is formed in the translucent layer 890.
  • the opening 899 corresponds to the opening 99 of the translucent member 90. That is, the opening 899 exposes the light emitting device main surface 61 of the semiconductor light emitting device 60 in the z direction.
  • the opening 899 is formed, for example, by laser machining.
  • the translucent layer 890 is cut in the z direction. More specifically, as shown in FIG. 12, the translucent layer 890 is cut along the cutting line CL indicated by the alternate long and short dash line using, for example, a dicing blade. As shown in FIG. 13, the length of the translucent portion 897 of the translucent layer 890 in the y direction is longer than the length of the cover portion 898 in the y direction. Further, the length of the translucent portion 897 in the y direction is longer than the length of the translucent portion 97 of the translucent member 90 in the y direction. The length of the cover portion 898 in the y direction is equal to the length of the cover portion 98 of the translucent member 90 in the y direction.
  • the substrate 820 is prepared.
  • the substrate 820 corresponds to the substrate 20 of the semiconductor light emitting device 10. Therefore, the first main surface side wiring 31, the second main surface side wiring 32, the third main surface side wiring 33 (not shown), and the fourth main surface side wiring 34 are formed on the substrate main surface 821 of the substrate 820.
  • the semiconductor light emitting element 60 integrated with the translucent layer 890, the switching element 70, and a plurality of capacitors 80 are mounted on the substrate main surface 821 of the substrate 820.
  • the semiconductor light emitting element 60 is mounted on the first main surface side wiring 31 via the conductive bonding material SD
  • the switching element 70 is mounted on the second main surface side wiring 32 via the conductive bonding material SD.
  • a plurality of capacitors 80 are mounted on the wirings 31 and 32 via the conductive bonding material SD.
  • first wire W1 and one or more (two in this embodiment) second wire W2 are used by a wire bonding apparatus.
  • Each of the third wire W3 is formed.
  • FIG. 15 shows the first wire W1 and the second wire W2.
  • the resin layer 900 is formed on the main surface 21 of the substrate.
  • the resin layer 900 corresponds to the sealing resin 100.
  • the resin layer 900 is made of a material having light-shielding properties and electrical insulating properties.
  • the resin layer 900 is made of a black epoxy resin.
  • the resin layer 900 seals the semiconductor light emitting device 60 integrated with the translucent layer 890, the switching element 70, the capacitor 80, and each of the wires W1 to W3. It can be said that the resin layer 900 seals the semiconductor light emitting element 60 and the driving element together with the translucent layer 890. It can be said that the resin layer 900 seals the semiconductor light emitting element 60 and the driving element together with the second wire W2.
  • the resin layer 900 seals the semiconductor light emitting element 60 and the driving element together with the third wire W3.
  • the driving element includes a switching element 70 and each capacitor 80.
  • the resin layer 900 is formed by, for example, drainfa molding or compression molding. In this case, the transparent side surface 893 of the transparent layer 890 facing the same side as the substrate side surface 23 is not covered by the resin layer 900. Further, the resin layer 900 is formed so as to fill the opening 899 of the translucent layer 890. Therefore, it can be said that the resin layer 900 seals the semiconductor light emitting element 60 and the driving element together with the first wire W1.
  • the resin side surface 903 of the resin layer 900, the translucent side surface 893 of the translucent layer 890, and the substrate side surface 823 of the substrate 820 are polished by the mirror surface processing machine.
  • the resin side surface 903 is a surface of the resin layer 900 facing the same side as the translucent side surface 893.
  • the resin layer 900, the translucent layer 890, and the substrate 820 are polished to the position of the alternate long and short dash line to form the sealing resin 100, the translucent member 90, and the substrate 20.
  • each of the resin side surface 103 of the sealing resin 100, the translucent side surface 93 of the translucent member 90, and the substrate side surface 23 of the substrate 20 becomes a mirror-finished smooth surface. Therefore, the translucent side surface 93 is a flatter surface than the translucent side surfaces 94 to 96.
  • the surface roughness can be indicated by, for example, the arithmetic mean roughness (Ra).
  • the semiconductor light emitting device 10 of the present embodiment has a configuration in which the sealing resin 100 is omitted from the semiconductor light emitting device 10 and the semiconductor light emitting element 60, the switching element 70, the plurality of capacitors 80, and the wires W1 to W3 are covered with the translucent member 90. And.
  • the inventors of the present application conducted a thermal shock test on the semiconductor light emitting device of the comparative example.
  • the thermal shock test the process of increasing the temperature from ⁇ 40 ° C. to 150 ° C. and decreasing the temperature from 150 ° C. to ⁇ 40 ° C. was set as one cycle, and this was carried out over 100 cycles.
  • excessive stress was generated in the semiconductor light emitting device of the comparative example.
  • an excessive load was applied to each of the wires W1 to W3 and the switching element 70.
  • the second wire W2 was detached from the fourth main surface side wiring 34, and the third wire W3 was detached from the third main surface side wiring 33. There was also a semiconductor light emitting device that would end up.
  • the linear expansion coefficient of the translucent member 90 is large with respect to the linear expansion coefficient of the substrate 20, and the difference between the linear expansion coefficient of the substrate 20 and the linear expansion coefficient of the translucent member 90 is large.
  • Excessive stress was generated in the semiconductor light emitting device of the comparative example due to the thermal expansion and contraction of the 20 and the translucent member 90, in other words, an excessive load was applied to each of the wires W1 to W3 and the switching element 70. It is thought to be the cause.
  • the semiconductor light emission is performed on the substrate main surface 21.
  • the size of the semiconductor light emitting device is larger than that in the configuration in which only the element 60 is mounted. Along with this, the size of the sealing resin 100 also increases. As a result, the thermal expansion and contraction of the sealing resin 100 have a large effect on the wires W1 to W3 and the switching element 70.
  • each wire W1 to W3 and the switching element 70 are made of a material having a linear expansion coefficient smaller than that of the translucent member 90, that is, a material having a linear expansion coefficient closer to that of the substrate 20 than the linear expansion coefficient of the translucent member 90. It is desirable to seal.
  • the translucent member 90 covers only the semiconductor light emitting element 60, and the wires W1 to W3 and the switching element 70 are linearly expanded more than the translucent member 90. It is sealed with a sealing resin 100 having a small coefficient. As a result, the difference between the linear expansion coefficient of the substrate 20 and the linear expansion coefficient of the sealing resin 100 becomes small, so that the stress generated in the semiconductor light emitting device 10 due to the difference in the linear expansion coefficient is reduced, in other words. Then, the load applied to each of the wires W1 to W3 and the switching element 70 becomes smaller.
  • the semiconductor light emitting device 10 is mounted on the substrate 20, the semiconductor light emitting element 60 mounted on the substrate main surface 21 of the substrate 20, and the semiconductor light emitting element 60, and drives the semiconductor light emitting element 60.
  • a light-transmitting member 90 that covers the side surface 63 of the light-emitting element of the semiconductor light-emitting element 60, and a material having a linear expansion coefficient smaller than that of the light-transmitting member 90, and seals the semiconductor light-emitting element 60 and the drive element.
  • the sealing resin 100 and the like are provided.
  • the sealing resin 100 that seals the semiconductor light emitting element 60 and the driving element is made of a material having a coefficient of linear expansion smaller than that of the translucent member 90.
  • the difference between the linear expansion coefficient of the sealing resin 100 and the linear expansion coefficient of the substrate 20 can be made smaller than the difference between the linear expansion coefficient of the translucent member 90 and the linear expansion coefficient of the substrate 20. Therefore, the difference in the amount of thermal expansion and the difference in the amount of heat shrinkage between the sealing resin 100 and the substrate 20 due to the temperature change of the semiconductor light emitting device 10 is the difference in the amount of thermal expansion and heat between the translucent member 90 and the substrate 20. It can be made smaller than the difference in the amount of shrinkage. Therefore, it is possible to reduce the stress generated in the semiconductor light emitting device 10 due to the temperature change of the semiconductor light emitting device 10.
  • the translucent member 90 has an opening 99 that exposes the first electrode 67, which is the main surface side electrode formed on the light emitting element main surface 61 of the semiconductor light emitting element 60.
  • the first wire W1 is connected to the first electrode 67 through the opening 99.
  • the sealing resin 100 is embedded in the opening 99.
  • the sealing resin 100 seals the translucent member 90.
  • the translucent member 90 has a translucent side surface 93 which is a translucent surface exposed from the resin side surface 103. According to this configuration, the semiconductor light emitting element 60 sealed by the translucent member 90 is also sealed by the sealing resin 100, so that the semiconductor light emitting element 60 can be more reliably protected. Further, even if the translucent member 90 is sealed by the sealing resin 100, the light emitted from the light emitting element side surface 63, which is the light emitting surface of the semiconductor light emitting element 60, passes through the translucent member 90 to the outside of the semiconductor light emitting device 10. It can be emitted.
  • the translucent side surface 93 (translucent surface) of the translucent member 90 is flush with the resin side surface 103 and the substrate side surface 23.
  • Each of the translucent side surface 93, the resin side surface 103, and the substrate side surface 23 is a mirror-processed smooth surface.
  • the translucent side surface 93 is a smooth surface, it is possible to suppress the scattering of light when the light from the semiconductor light emitting element 60 passes through the translucent side surface 93. Therefore, it is possible to suppress a decrease in the light output of the semiconductor light emitting device 10.
  • the driving element includes a switching element 70.
  • a second drive electrode 74 serving as a drive electrode is formed on the switching element main surface 71 of the switching element 70.
  • a fourth main surface side wiring 34 which is a main surface side drive wiring electrically connected to the second drive electrode 74, is formed on the substrate main surface 21 of the substrate 20.
  • the second wire W2 connects the second drive electrode 74 and the fourth main surface side wiring 34.
  • the switching element 70, the fourth main surface side wiring 34, and the second wire W2 are sealed by the sealing resin 100, the second wire W2 caused by the temperature change of the semiconductor light emitting device 10 The load can be reduced. As a result, it is possible to prevent the second wire W2 from being disconnected from the fourth main surface side wiring 34 and the switching element 70 from being deformed.
  • the driving element includes a switching element 70.
  • a control electrode 75 is formed on the switching element main surface 71 of the switching element 70.
  • a third main surface side wiring 33 which is a main surface side control wiring electrically connected to the control electrode 75, is formed on the substrate main surface 21 of the substrate 20.
  • the third wire W3 connects the control electrode 75 and the third main surface side wiring 33.
  • the switching element 70, the third main surface side wiring 33, and the third wire W3 are sealed by the sealing resin 100, the third wire W3 caused by the temperature change of the semiconductor light emitting device 10 The load can be reduced. As a result, it is possible to prevent the third wire W3 from being disconnected from the third main surface side wiring 33 and the switching element 70 from being deformed.
  • the driving element includes a capacitor 80.
  • the capacitor 80 is electrically connected to the semiconductor light emitting device 60 and the switching element 70. According to this configuration, the area of the conductive loop through which the current flows in the order of the capacitor 80, the switching element 70, and the semiconductor light emitting element 60 becomes smaller than the configuration in which the capacitor 80 is provided outside the semiconductor light emitting device 10. This makes it possible to reduce the inductance of the conductive path that electrically connects the capacitor 80, the switching element 70, and the semiconductor light emitting element 60.
  • the volume of the translucent member 90 is smaller than the volume of the encapsulating resin 100, the coefficient of linear expansion of the translucent member 90 and the encapsulating resin 100 when the temperature of the semiconductor light emitting device 10 changes. Deformation of the sealing resin 100 due to the difference from the coefficient of linear expansion can be suppressed. Therefore, it is possible to reduce the load on the wires W1 to W3 and the switching element 70 due to the temperature change of the semiconductor light emitting device 10, respectively.
  • the distance HA between the substrate main surface 21 of the substrate 20 and the translucent main surface 91 of the translucent member 90 in the z direction is the distance between the substrate main surface 21 and the switching element main surface 71 of the switching element 70.
  • the distance between the z directions is less than HB.
  • the volume of the translucent member 90 is smaller than the volume of the encapsulating resin 100, the coefficient of linear expansion of the translucent member 90 and the encapsulating resin 100 when the temperature of the semiconductor light emitting device 10 changes. Deformation of the sealing resin 100 due to the difference from the coefficient of linear expansion can be suppressed. Therefore, it is possible to reduce the load on the wires W1 to W3 and the switching element 70 due to the temperature change of the semiconductor light emitting device 10, respectively.
  • the entire switching element 70 is covered with the sealing resin 100.
  • the translucent member 90 is provided in the semiconductor light emitting element 60 and its surroundings, and covers the side surface 63 of the light emitting element which is a light emitting surface.
  • the switching element 70 and the translucent member 90 are arranged at a distance from each other.
  • a sealing resin 100 is interposed between the switching element 70 and the translucent member 90.
  • the sealing resin 100 is interposed between the translucent member 90 and the switching element 70. Therefore, it is possible to suppress the change in the distance between the semiconductor light emitting element 60 and the switching element 70 due to the volume change of the translucent member 90 when the temperature of the semiconductor light emitting device 10 changes. Therefore, it is possible to reduce the load on the wires W1 to W3 and the switching element 70 due to the temperature change of the semiconductor light emitting device 10, respectively.
  • Each capacitor 80 is entirely covered with a sealing resin 100.
  • the translucent member 90 is provided in the semiconductor light emitting element 60 and its surroundings, and covers the side surface 63 of the light emitting element which is a light emitting surface.
  • Each capacitor 80 and the translucent member 90 are arranged at a distance from each other.
  • a sealing resin 100 is interposed between each capacitor 80 and the translucent member 90.
  • the sealing resin 100 is interposed between the translucent member 90 and each capacitor 80. Therefore, it is possible to suppress the movement of each capacitor 80 due to the volume change of the translucent member 90 when the temperature of the semiconductor light emitting device 10 changes.
  • the back surface 62 of the light emitting element of the semiconductor light emitting element 60 and the back surface 92 of the translucent member 90 are flush with each other. According to this configuration, it becomes easy to mount the assembly of the semiconductor light emitting element 60 and the translucent member 90 on the substrate main surface 21 so that the substrate main surface 21 of the substrate 20 and the light emitting element back surface 62 are parallel to each other. Therefore, both the light emitting element side surface 63, which is the light emitting surface of the semiconductor light emitting element 60, and the translucent side surface 93, which is the translucent surface of the translucent member 90, are arranged so as to be perpendicular to the substrate main surface 21. It will be easier.
  • the sealing resin 100 is configured to have a higher glass transition temperature than the translucent member 90. According to this configuration, since the sealing resin 100 has higher heat resistance than the translucent member 90, it protects the wires W1 to W3, the switching element 70, and the capacitor 80 in a wider temperature range than the translucent member 90. be able to. Therefore, the semiconductor light emitting device 10 can be applied to a wider temperature range.
  • an exterior electrode 50 individually electrically connected to the semiconductor light emitting element 60 and the switching element 70 is formed on the back surface 22 of the substrate 20, an exterior electrode 50 individually electrically connected to the semiconductor light emitting element 60 and the switching element 70 is formed.
  • the semiconductor light emitting device 10 can have a surface mount type package structure, for example, in a direction orthogonal to the z direction, as compared with a configuration in which the lead frame projects to the side of the substrate 20.
  • the semiconductor light emitting device 10 can be miniaturized.
  • the substrate 20 has a connection wiring 40 provided so as to penetrate the substrate 20 in the z direction.
  • the connection wiring 40 electrically connects the semiconductor light emitting element 60, the switching element 70, and the exterior electrode 50.
  • the conductive path between the electrode 74 and the exterior electrode 50 and the conductive path between the control electrode 75 of the switching element 70 and the exterior electrode 50 can be shortened. Therefore, the inductance caused by the length of these conductive paths can be reduced.
  • the first electrode 67 which is the main surface side electrode formed on the main surface 61 of the light emitting device of the semiconductor light emitting device 60, and the second drive electrode 74 of the switching element 70 are connected by the first wire W1.
  • the first electrode 67 and the second drive electrode 74 As an electrical connection structure between the first electrode 67 and the second drive electrode 74, the first electrode 67 and the main surface side wiring formed on the substrate main surface 21 are connected by wires to be main.
  • the electrical connection structure between the first electrode 67 and the second drive electrode 74 has a simpler configuration and the first electrode 67.
  • the second drive electrode 74 can be brought close to each other. Therefore, the conductive path between the first electrode 67 and the second drive electrode 74 is shortened, and the inductance caused by the length of the conductive path can be reduced.
  • the driving element includes a plurality of (two in this embodiment) capacitors 80.
  • the two capacitors 80 are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction.
  • the semiconductor light emitting device 60 is arranged between the two capacitors 80 in the x direction.
  • the semiconductor light emitting device 60 can be arranged at the center of the main surface 21 of the substrate in the x direction. Further, the semiconductor light emitting element 60 and the switching element 70 can be aligned and arranged in the x direction. This makes it easier to connect the first electrode 67 of the semiconductor light emitting device 60 and the second drive electrode 74 of the switching element 70 with the first wire W1.
  • the second drive electrode 74 of the switching element 70 is connected to the ground electrode 54 via the second wire W2, the fourth main surface side wiring 34, and the fourth connection wiring 44. According to this configuration, when the ground electrode 54 is electrically connected to the ground of the driver circuit PM and the potential of the second drive electrode 74 of the switching element 70 fluctuates due to noise or the like, the ground potential of the driver circuit PM followss and fluctuates, so that the gate-source voltage of the switching element 70 is suppressed from becoming a negative value. Therefore, fluctuations in the threshold voltage of the switching element 70 can be suppressed.
  • the method for manufacturing the semiconductor light emitting device 10 includes a step of sealing the semiconductor light emitting device 60 with a translucent layer 890 and a semiconductor light emitting device sealed on the substrate main surface 821 of the substrate 820 by the translucent layer 890. It includes a step of mounting the element 60 and the driving element, and a step of forming a resin layer 900 for sealing the semiconductor light emitting element 60 and the driving element.
  • the coefficient of linear expansion of the translucent layer 890 is larger than the coefficient of linear expansion of the substrate 820, and the coefficient of linear expansion of the resin layer 900 is smaller than the coefficient of linear expansion of the translucent layer 890.
  • the resin layer 900 that encloses the semiconductor light emitting element 60 and the driving element is made of a material having a linear expansion coefficient smaller than that of the translucent layer 890.
  • the difference between the linear expansion coefficient of the resin layer 900 and the linear expansion coefficient of the substrate 820 can be made smaller than the difference between the linear expansion coefficient of the translucent layer 890 and the linear expansion coefficient of the substrate 820. Therefore, the difference in the amount of thermal expansion and the difference in the amount of heat shrinkage between the resin layer 900 and the substrate 820 due to the temperature change of the semiconductor light emitting device 10 is the difference in the amount of thermal expansion and the heat shrinkage between the translucent layer 890 and the substrate 820. It can be smaller than the difference in quantity. Therefore, it is possible to reduce the stress generated in the semiconductor light emitting device 10 due to the temperature change of the semiconductor light emitting device 10.
  • the method for manufacturing the semiconductor light emitting device 10 includes a step of mirror-finishing the resin side surface 903 of the resin layer 900, the substrate side surface 823 of the substrate 820, and the translucent side surface 893 of the translucent layer 890.
  • the substrate 20, the sealing resin 100, and the translucent member 90 are formed by this step, and the substrate side surface 23, the resin side surface 103, and the translucent side surface 93 are formed.
  • the same effect as (1-4) above can be obtained.
  • the semiconductor light emitting device 10 of the second embodiment will be described with reference to FIGS. 18 to 27.
  • the semiconductor light emitting device 10 of the present embodiment is provided with a light transmitting member 200 instead of the light transmitting member 90 and the sealing resin 100, and the substrate 20 is a multilayer substrate.
  • the components common to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • FIG. 18 For convenience, the substrate 20, the semiconductor light emitting element 60, the switching element 70, the capacitor 80, the wires W1 to W3, and the first translucent member 210 arranged inside the second translucent member 220, which will be described later, are shown. Is indicated by a broken line.
  • the semiconductor light emitting device 10 includes a translucent member 200.
  • the translucent member 200 is made of the same material as, for example, the translucent member 90.
  • the translucent member 200 seals a semiconductor light emitting element 60, a switching element 70, a plurality of capacitors 80, and wires W1 to W3. Further, the translucent member 200 seals the substrate 20. More specifically, the translucent member 200 covers the substrate main surface 21 and the substrate side surfaces 23 to 26. That is, the translucent member 200 covers the substrate side surface 23 which is the light emitting side substrate side surface facing the same side as the light emitting element side surface 63 which is the light emitting surface of the semiconductor light emitting element 60. On the other hand, the translucent member 200 does not cover the back surface 22 of the substrate.
  • the translucent member 200 is formed in a rectangular parallelepiped shape.
  • the translucent member 200 includes a first translucent member 210 formed on the substrate main surface 21 of the substrate 20, and a second translucent member 220 that covers the first translucent member 210 and the substrate side surfaces 23 to 26 of the substrate 20. ,have.
  • the first translucent member 210 and the second translucent member 220 are made of the same material. It can be said that the second translucent member 220 seals the first translucent member 210.
  • the first translucent member 210 seals a semiconductor light emitting element 60, a switching element 70, a plurality of capacitors 80, and wires W1 to W3. That is, it can be said that the first translucent member 210 seals the driving element used for driving the semiconductor light emitting element 60.
  • the driving element includes a switching element 70 and a capacitor 80. Therefore, it can be said that the translucent member 200 seals the driving element.
  • the first translucent member 210 is formed to have the same size as the substrate 20.
  • the first translucent member 210 intersects the first translucent main surface 211 and the first translucent back surface 212 facing opposite to each other in the z direction, and the first translucent main surface 211 and the first translucent back surface 212. It has a first translucent side surface 213 to 216 facing the surface.
  • the first translucent main surface 211 faces the same side as the substrate main surface 21 of the substrate 20, and the first translucent back surface 212 faces the same side as the substrate back surface 22.
  • the first translucent side surface 213 faces the same side as the substrate side surface 23, the first translucent side surface 214 faces the same side as the substrate side surface 24, the first translucent side surface 215 faces the same side as the substrate side surface 25, and the first The translucent side surface 216 faces the same side as the substrate side surface 26.
  • the first translucent side surface 213 is flush with the substrate side surface 23, the first translucent side surface 214 is flush with the substrate side surface 24, and the first translucent side surface 215 is flush with the substrate side surface 25.
  • the first translucent side surface 216 is flush with the substrate side surface 26.
  • the first translucent side surface 213 is an example of the first light emitting side side surface facing the same side as the light emitting element side surface 63 which is the light emitting surface of the semiconductor light emitting element 60.
  • the second translucent member 220 intersects the second translucent main surface 221 and the second translucent back surface 222 and the second translucent main surface 221 and the second translucent back surface 222 facing opposite to each other in the z direction. It has a second translucent side surface 223 to 226 facing the surface.
  • the second translucent main surface 221 faces the same side as the first translucent main surface 211, and covers the first translucent main surface 211 from the z direction.
  • the second translucent back surface 222 is formed so as to face the same side as the substrate back surface 22 and to be flush with the substrate back surface 22.
  • the second translucent side surface 223 faces the same side as the first translucent side surface 213 and the substrate side surface 23, and covers both the first translucent side surface 213 and the substrate side surface 23 from the y direction.
  • the second translucent side surface 224 faces the same side as the first translucent side surface 214 and the substrate side surface 24, and covers both the first translucent side surface 214 and the substrate side surface 24 from the y direction.
  • the second translucent side surface 225 faces the same side as the first translucent side surface 215 and the substrate side surface 25, and covers both the first translucent side surface 215 and the substrate side surface 25 from the x direction.
  • the second translucent side surface 226 faces the same side as the first translucent side surface 216 and the substrate side surface 26, and covers both the first translucent side surface 216 and the substrate side surface 26 from the x direction.
  • each surface 221 to 226 of the second translucent member 220 constitutes the outer surface of the semiconductor light emitting device 10. More specifically, the second translucent main surface 221 constitutes the device main surface 11, and the second translucent back surface 222 and the substrate back surface 22 of the substrate 20 constitute the device back surface 12.
  • the second translucent side surface 223 constitutes the device side surface 13
  • the second translucent side surface 224 constitutes the device side surface 14
  • the second translucent side surface 225 constitutes the device side surface 15
  • the second translucent side surface 226 constitutes the device. It constitutes the side surface 16. Therefore, the second translucent side surface 223 constitutes a translucent surface that transmits the light emitted by the semiconductor light emitting element 60.
  • the second translucent side surface 223 is a mirror-processed smooth surface.
  • the second translucent side surfaces 224 to 226 are formed by dicing. Therefore, the second translucent side surfaces 224 to 226 are examples of the dicing side surface.
  • the second translucent side surface 223 is a flatter surface than the second translucent side surface 224 to 226.
  • the surface roughness can be indicated by, for example, the arithmetic mean roughness (Ra).
  • the second translucent member 220 includes a main surface side cover portion 227 that covers the first translucent main surface 211, and a light emitting side cover that covers the first translucent side surface 213 and the substrate side surface 23.
  • the light emitting side cover portion 228 covers the entire surface of the substrate side surface 23
  • the side surface side cover portion 229A covers the entire surface of the substrate side surface 24
  • the side surface side cover portion 229B covers the entire surface of the substrate side surface 25
  • the side surface side cover portion 229C covers the entire surface of the substrate side surface 26.
  • the thickness DA of the main surface side cover portion 227 (the length of the main surface side cover portion 227 in the z direction) is the thickness DP of the first translucent member 210 and the thickness DQ of the substrate 20. Thinner than.
  • the thickness DA of the main surface side cover portion 227 is the thickness DC of the side surface side cover portion 229A (the length of the side surface side cover portion 229A in the y direction) and the side surface side cover portion 229B. It is thinner than the thickness DD (the length of the side cover portion 229B in the x direction) and the thickness DE of the side cover portion 229C (the length of the side cover portion 229C in the x direction).
  • the thicknesses DC, DD, and DE are equal to each other.
  • the thickness DB of the light emitting side cover portion 228 (the length of the light emitting side cover portion 228 in the y direction) is the thickness DC of the side surface side cover portion 229A and the thickness DD of the side surface side cover portion 229B.
  • the thickness of the side cover portion 229C is thinner than DE.
  • the thickness DB of the light emitting side cover portion 228 is equal to the thickness DA of the main surface side cover portion 227.
  • each thickness DA to DE can be changed arbitrarily.
  • the thickness DA may be equal to the thicknesses DC-DE.
  • the thickness DB may be thinner than the thickness DA.
  • the thicknesses DC to DE may be different from each other.
  • the substrate 20 of this embodiment is composed of a multilayer substrate including a plurality of insulating layers and a conductive layer.
  • the substrate 20 has a main surface layer 20A as an insulating layer including the substrate main surface 21, a back surface layer 20B as an insulating layer including the substrate back surface 22, and a main surface layer 20A and a back surface layer 20B in the z direction.
  • the intermediate layer 20C is one layer, but the intermediate layer 20C is not limited to this.
  • the intermediate layer 20C may be composed of a plurality of layers. That is, the substrate 20 may be configured to include four or more conductive layers.
  • Both the main surface layer 20A and the back surface layer 20B are made of a material having electrical insulation.
  • a material having electrical insulation for example, a glass epoxy resin is used.
  • the main surface side wiring 30 as a conductive layer is formed as in the first embodiment.
  • An exterior electrode 50 as a conductive layer is formed on the front surface of the back surface layer 20B (the back surface 22 of the substrate) as in the first embodiment.
  • the intermediate layer 20C is in contact with both the main surface layer 20A and the back surface layer 20B.
  • the thickness of the intermediate layer 20C is thinner than the thickness of the main surface layer 20A and the thickness of the back surface layer 20B.
  • the intermediate layer 20C has a metal layer 27 and an insulating layer 28.
  • the metal layer 27 is made of, for example, Cu.
  • the metal layer 27 is provided so as to overlap with the semiconductor light emitting device 60.
  • the metal layer 27 is provided so as to overlap with the switching element 70.
  • the metal layer 27 is provided so as to overlap substantially the entire surface of the substrate main surface 21 and the substrate back surface 22 when viewed from the z direction.
  • the shape of the metal layer 27 viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.
  • the outer edge of the metal layer 27 is one size smaller than the outer edge of the main surface 21 of the substrate and the outer edge of the back surface 22 of the substrate.
  • the metal layer 27 is located inward of the substrate side surfaces 23 to 26. As described above, when viewed from the z direction, the metal layer 27 is provided so as to overlap the main surface side wiring 30, the wires W1 to W3, the semiconductor light emitting element 60, the switching element 70, and the plurality of capacitors 80.
  • the metal layer 27 is formed with a plurality of through holes 27a for separating the metal layer 27 and the connection wiring 40.
  • the through hole 27a penetrates the metal layer 27 in the z direction.
  • the insulating layer 28 is made of a material having electrical insulating properties. As the material having electrical insulation, for example, a glass epoxy resin is used. It is preferable that the same material as the main surface layer 20A and the back surface layer 20B is used for the insulating layer 28.
  • the insulating layer 28 is provided so as to surround the metal layer 27, and constitutes the outer peripheral edge of the intermediate layer 20C. That is, the insulating layer 28 constitutes the substrate side surfaces 23 to 26 of the intermediate layer 20C.
  • the intermediate layer 20C may also be provided between the inner surface constituting the through hole 27a of the metal layer 27 and the connection wiring 40. This facilitates electrical insulation between the metal layer 27 and the connection wiring 40.
  • the method for manufacturing the semiconductor light emitting device 10 of the present embodiment includes an element mounting step, a wire forming step, a first translucent layer forming step, a first cutting step, a second transmissive layer forming step, a second cutting step, and mirror surface processing. It has a process.
  • the element mounting step, the wire forming step, the first translucent layer forming step, the first cutting step, the second translucent layer forming step, the second cutting step, and the mirror surface processing step are carried out in this order.
  • the substrate 920 shown in FIG. 21 is prepared.
  • the substrate 920 is a member constituting the plurality of substrates 20.
  • the substrate 920 has a substrate main surface 921 and a substrate back surface 922 facing opposite sides in the z direction.
  • a plurality of main surface side wirings 30 are formed on the substrate main surface 921, and a plurality of exterior electrodes 50 are formed on the substrate back surface 922.
  • a plurality of connection wirings 40 are formed on the substrate 920 so as to penetrate the substrate 920 in the z direction.
  • the substrate 920 has a multilayer structure in which a plurality of layers are laminated in the thickness direction (z direction) of the substrate 920.
  • the substrate 920 includes a main surface layer 920A including the substrate main surface 921, a back surface layer 920B including the substrate back surface 922, and an intermediate layer 920C arranged between the main surface layer 920A and the back surface layer 920B in the z direction.
  • the main surface layer 920A corresponds to the main surface layer 20A of the substrate 20
  • the back surface layer 920B corresponds to the back surface layer 20B of the substrate
  • the intermediate layer 920C corresponds to the intermediate layer 20C of the substrate 20.
  • the semiconductor light emitting element 60, the switching element 70, and a plurality of capacitors 80 are mounted on the substrate main surface 921 of the substrate 920.
  • the mounting method of the semiconductor light emitting device 60, the switching element 70, and the plurality of capacitors 80 is the same as that of the first embodiment.
  • the first wire W1, the second wire W2, and the third wire W3 are formed.
  • the method of forming these wires W1 to W3 is the same as that of the first embodiment. Note that FIG. 21 shows the first wire W1 and the second wire W2.
  • the first translucent layer 930 is formed on the main surface of the substrate 921.
  • the first translucent layer 930 is a layer constituting the first translucent member 210, and is made of a translucent material. More specifically, the first translucent layer 930 is made of a transparent resin material. Examples of the transparent resin material include epoxy resin, polycarbonate resin, and acrylic resin.
  • the first translucent layer 930 seals the semiconductor light emitting device 60. In the present embodiment, the first translucent layer 930 seals a plurality of semiconductor light emitting elements 60, a plurality of switching elements 70, a plurality of capacitors 80, and wires W1 to W3.
  • both the first translucent layer 930 and the substrate 920 are cut along the z direction using, for example, a dicing blade. Specifically, both the first translucent layer 930 and the substrate 920 are cut along the cutting line CL1 shown in FIG. As a result, as shown in FIG. 22, the substrate 20 and the first translucent member 210 are formed. That is, in the first cutting step, the substrate 20, the semiconductor light emitting element 60 mounted on the substrate main surface 21, the switching element 70, a plurality of (two in this embodiment) capacitors 80, and the wires W1 to W3 are used. , The semiconductor light emitting assembly (hereinafter, "assembly AS") with the first translucent member 210 is separated into individual pieces.
  • assembly AS The semiconductor light emitting assembly with the first translucent member 210 is separated into individual pieces.
  • a semiconductor light emitting element 60 mounted on a substrate main surface 21 of a substrate 20, a switching element 70, a plurality of (two in this embodiment) capacitors 80, and wires W1 to W3 are first translucent. It is a configuration sealed by a member 210.
  • a plurality of assembly ASs are prepared by the element mounting step, the wire forming step, the first translucent layer forming step, and the first cutting step.
  • the second translucent layer forming step includes an assembly mounting step and a translucent layer forming step.
  • the support substrate 950 is first prepared.
  • the support substrate 950 is formed in a flat plate shape with the z direction as the thickness direction.
  • the support substrate 950 has a substrate main surface 951 facing one side in the z direction.
  • a mount tape 952 is formed on the main surface 951 of the substrate.
  • a plurality of assembly ASs are mounted on the mount tape 952. As shown in FIGS. 22 and 23, the plurality of assembly ASs are arranged at intervals in both the x-direction and the y-direction when viewed from the z-direction.
  • a plurality of assembly ASs arranged along the x direction are arranged at intervals in the x direction while being aligned with each other in the y direction.
  • a plurality of assembly ASs arranged along the y direction are arranged at intervals in the y direction while being aligned with each other in the x direction. Therefore, as shown in FIG. 23, in the predetermined assembly AS, a gap Gx along the x direction and a gap Gy along the y direction are formed around the assembly AS when viewed from the z direction. ..
  • the second translucent layer 940 is formed so as to cover each assembly AS.
  • the second translucent layer 940 is a layer constituting the second translucent member 220, and is made of a transparent resin material. Examples of the transparent resin material include epoxy resin, polycarbonate resin, and acrylic resin.
  • the second translucent layer 940 is made of the same material as the first translucent layer 930.
  • the second translucent layer 940 is formed so as to fill the gap Gx and the gap Gy. That is, the second translucent layer 940 is formed so as to seal all the substrate side surfaces of the substrate 920 of each assembly AS.
  • the support substrate 950 and the mount tape 952 are deleted.
  • the method for removing the support substrate 950 and the mount tape 952 is, for example, the same as the support substrate deletion step of the first embodiment.
  • a dicing tape DT is prepared, and a plurality of assembly ASs sealed by the second translucent layer 940 are placed on the dicing tape DT.
  • a dicing blade is used to cut the second translucent layer 940 along the cutting line CL2 shown in FIG. 25.
  • the cutting line CL2 extends in the center of the y direction and along the x direction in the gap Gx, and extends in the center of the x direction and along the y direction in the gap Gy.
  • the width of the dicing blade and the sizes of the gaps Gx and Gy are set so that the dicing blades enter the gaps Gx and Gy.
  • a plurality of assembly ASs covered with the second translucent layer 940 are formed.
  • the second translucent side surface 943 of the second translucent layer 940 is polished by the mirror surface processing machine.
  • the second translucent layer 940 is polished to the alternate long and short dash line shown in FIG. 27.
  • the second translucent member 220 is formed.
  • the translucent member 200 is formed.
  • the second translucent side surface 223 (see FIG. 20) of the second translucent member 220 becomes a mirror-finished smooth surface.
  • the second translucent side surfaces 224 to 226 (see FIG. 19) of the second translucent member 220 are not mirror-finished, they are dicing side surfaces formed by dicing in the second cutting step.
  • the semiconductor light emitting device 10 is manufactured.
  • the semiconductor light emitting device 10 is a translucent translucent member that encloses a substrate 20 having a substrate main surface 21, a semiconductor light emitting element 60 mounted on the substrate main surface 21, and a semiconductor light emitting element 60. It has 200 and.
  • the substrate 20 has a substrate side surface 23 which is a light emitting side substrate side surface facing the same side as the light emitting element side surface 63 which is a light emitting surface of the semiconductor light emitting element 60.
  • the translucent member 200 has a light emitting side cover portion 228 that covers the side surface 23 of the substrate.
  • the light emitting side cover portion 228 has a translucent side surface 223 which is a translucent surface facing the same side as the light emitting element side surface 63.
  • the translucent side surface 223 is a mirror-finished smooth surface.
  • the translucent member 200 covers the side surface 23 of the substrate, only the translucent side surface 223 is mirror-processed. That is, the side surface 23 of the substrate is not mirror-finished.
  • the processing chips on the side surface 23 of the substrate do not adhere to the mirror surface processing machine during mirror surface processing, so that cutting marks (polishing marks) may be formed on the translucent side surface 223 due to the processing chips. Be avoided. Therefore, since the light from the semiconductor light emitting element 60 is prevented from being scattered by the cutting marks (polishing marks) when passing through the translucent side surface 223, it is possible to suppress a decrease in the light output of the semiconductor light emitting device 10.
  • the translucent member 200 has side surface side cover portions 229A to 229C that cover the substrate side surfaces 24 to 26 of the substrate 20.
  • the side surface side cover portions 229A to 229C have translucent side surfaces 224 to 226 which are dicing side surfaces on which cutting marks are formed.
  • the translucent side surface 223, which is a translucent surface, is a flatter surface than the translucent side surfaces 224 to 226.
  • the manufacturing cost can be reduced as compared with the case where at least one of the second translucent side surfaces 224 to 226 is mirror-processed in addition to the second translucent side surface 223.
  • the distance between the substrate side surface 23 and the translucent side surface 223 is the distance between the substrate side surface 24 and the translucent side surface 224, and the distance between the substrate side surface 25 and the translucent side surface 225. It is shorter than the distance between the substrate side surface 26 and the translucent side surface 226.
  • the thickness of the light emitting side cover portion 228 through which the light from the semiconductor light emitting element 60 passes in the y direction (light emission direction) becomes thin. Therefore, it is possible to reduce the possibility that the light from the semiconductor light emitting element 60 is scattered by the translucent member 200.
  • the substrate 20 includes a main surface layer 20A including a substrate main surface 21, a back surface layer 20B including a substrate back surface 22, and an intermediate layer 20C arranged between the main surface layer 20A and the back surface layer 20B.
  • the intermediate layer 20C includes a metal layer 27.
  • the metal layer 27 is arranged at a position where it overlaps with the semiconductor light emitting element 60 and the switching element 70 when viewed from the z direction. According to this configuration, when water permeates toward the main surface 21 of the substrate through the back surface 22 of the substrate, the metal layer 27 makes it difficult for water to permeate toward the semiconductor light emitting element 60 and the switching element 70. Therefore, it is possible to prevent moisture from adhering to the semiconductor light emitting element 60 and the switching element 70.
  • the metal layer 27 is located inward of the substrate side surfaces 23 to 26 of the substrate 20. According to this configuration, when the substrate 920 is cut by using the dicing blade in the manufacturing process of the semiconductor light emitting device 10, only the insulating layer of the substrate 920 is cut, so that the substrate 920 can be easily cut.
  • the metal layer 27 is provided with a through hole 27a for separating the metal layer 27 and the connection wiring 40.
  • An insulating layer 28 is provided between the connection wiring 40 and the inner surface constituting the through hole 27a.
  • connection wiring 40 and the metal layer 27 can be electrically insulated.
  • the back surface 22 of the substrate 20 is covered with the back surface insulating layer 22a. According to this configuration, it becomes difficult for water to infiltrate the back surface 22 of the substrate from the outside of the substrate 20. That is, it is possible to suppress the infiltration of water into the substrate 20. Therefore, it is possible to further suppress the adhesion of water to the semiconductor light emitting element 60, the switching element 70, the capacitor 80, the wires W1 to W3, and the wiring 30 on the main surface side mounted on the main surface 21 of the substrate.
  • the light emitting side cover portion 228 of the translucent member 200 covers at least the main surface layer 20A and the intermediate layer 20C of the substrate side surface 23 of the substrate 20. According to this configuration, even if water infiltrates from the back surface layer 20B of the substrate side surface 23, it is possible to suppress the infiltration of water into the main surface layer 20A by the metal layer 27.
  • the light emitting side cover portion 228 covers the entire side surface 23 of the substrate. According to this configuration, since the light emitting side cover portion 228 suppresses the infiltration of water from the substrate side surface 23, the moisture outside the substrate 20 is suppressed from entering the substrate main surface 21 via the substrate side surface 23. can.
  • the translucent member 200 includes a first translucent member 210 provided on the substrate main surface 21 of the substrate 20 and a second translucent member 220 for sealing the first translucent member 210.
  • the first translucent member 210 seals the semiconductor light emitting element 60, the switching element 70, the capacitor 80, and the wires W1 to W3.
  • the second translucent member 220 includes a light emitting side cover portion 228.
  • the assembly in which the first translucent member 210 is formed on the main surface 21 of the substrate can be easily transported by the transport device. Further, since the semiconductor light emitting element 60, the switching element 70, the capacitor 80, and the wires W1 to W3 are protected by the first translucent member 210, the semiconductor light emitting element 60, the switching element 70, the capacitor 80, and each wire W1 are protected during transportation. It is possible to prevent the wires W3 from coming into contact with external parts, and to prevent the wires W1 to W3 from being deformed during transportation.
  • the second translucent member 220 covers the entire first translucent member 210. According to this configuration, the second translucent layer 940 can be easily formed in the manufacturing process of the semiconductor light emitting device 10.
  • the first translucent member 210 faces the same side as the first translucent main surface 211 facing the same side as the substrate main surface 21 and the light emitting element side surface 63 which is the light emitting surface of the semiconductor light emitting element 60. It has a first translucent side surface 213 which is one light emitting side side surface, and first translucent side surfaces 214 to 216 which intersect with the first translucent side surface 213 (light emitting surface) when viewed from the z direction.
  • the second translucent member 220 covers the main surface side cover portion 227 that covers the first translucent main surface 211, the light emitting side cover portion 228 that covers the first translucent side surface 213, and the first translucent side surfaces 214 to 216. It has side cover portions 229A to 229C.
  • the main surface side cover portion 227 has a second translucent main surface 221 facing the same side as the first translucent main surface 211.
  • the side surface side cover portions 229A to 229C have second translucent side surfaces 224 to 226 that serve as dicing side surfaces.
  • the distance between the first translucent side surface 213 and the second translucent side surface 223 is the distance between the first translucent side surface 214 and the second translucent side surface 224, and the distance between the first translucent side surface 215 and the second translucent side surface 215. It is shorter than the distance between the side surface 225 and the distance between the first translucent side surface 216 and the second translucent side surface 226.
  • the thickness of the light emitting side cover portion 228 through which the light from the semiconductor light emitting element 60 passes in the y direction (light emission direction) becomes thin. Therefore, it is possible to reduce the possibility that the light from the semiconductor light emitting element 60 is scattered by the translucent member 200.
  • the distance between the first translucent main surface 211 and the second transmissive main surface 221 is the distance between the first transmissive side surface 214 and the second translucent side surface 224, and the first translucent surface. It is shorter than the distance between the side surface 215 and the second translucent side surface 225, and the distance between the first translucent side surface 216 and the second translucent side surface 226.
  • the thickness of the main surface side cover portion 227 can be reduced, so that the thickness of the translucent member 200 can be reduced. Therefore, it is possible to reduce the size of the semiconductor light emitting device 10 in the z direction (height direction of the semiconductor light emitting device 10).
  • the side surface side cover portions 229A to 229C of the translucent member 200 cover at least the main surface layer 20A and the intermediate layer 20C of the substrate side surfaces 24 to 26 of the substrate 20. ..
  • the metal layer 27 can suppress the infiltration of water into the main surface layer 20A.
  • the side surface side cover portions 229A to 229C cover the entire side surfaces 24 to 26 of the substrate.
  • the side cover portions 229A to 229C suppress the infiltration of water from the substrate side surfaces 24 to 26, the moisture outside the substrate 20 enters the substrate main surface 21 via the substrate side surfaces 24 to 26. It is possible to suppress the infiltration into.
  • the method for manufacturing the semiconductor light emitting device 10 is mounted on a substrate 20 having a substrate main surface 21 and substrate side surfaces 23 to 26, and the substrate main surface 21 so as to face a direction intersecting the substrate main surface 21.
  • a plurality of assembly ASs which are semiconductor light emitting assemblies including a semiconductor light emitting element 60 having a light emitting element side surface 63 as a light emitting surface and a translucent first translucent layer 930 for encapsulating the semiconductor light emitting element 60.
  • the step includes a step of polishing the second translucent side surface 943, which is a translucent surface which is a surface of the second translucent layer 940 facing the same side as the side surface 63 of the light emitting element.
  • the second translucent layer 940 covers the side surface 23 of the substrate, only the second translucent side surface 943 is mirror-finished. That is, the side surface 23 of the substrate is not mirror-finished.
  • the processing chips on the side surface 23 of the substrate do not adhere to the mirror surface processing machine during mirror surface processing, so that cutting marks (polishing marks) are formed on the second translucent side surface 943 due to the processing chips. Is avoided. Therefore, since the light from the semiconductor light emitting element 60 is prevented from being scattered by the cutting marks (polishing marks) when passing through the second translucent side surface 943, it is possible to suppress a decrease in the light output of the semiconductor light emitting device 10.
  • the semiconductor light emitting device 10 of the third embodiment will be described with reference to FIGS. 28 to 34.
  • the semiconductor light emitting device 10 of the present embodiment has a different configuration of the translucent member 300 and the substrate 20 as compared with the semiconductor light emitting device 10 of the second embodiment.
  • the components common to the second embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • FIG. 28 For convenience, the substrate 20, the semiconductor light emitting element 60, the switching element 70, the capacitor 80, and the wires W1 to W3 arranged inside the translucent member 300 are shown by broken lines.
  • the translucent member 300 is made of the same material as the translucent member 200 of the second embodiment. As shown in FIG. 28, the translucent member 300 seals each of the semiconductor light emitting element 60, the switching element 70, the plurality of (two in this embodiment) capacitors 80, and the wires W1 to W3, and the side surface of the substrate. A part of each of 23 to 26 in the z direction is sealed.
  • the translucent member 300 is a translucent side surface 303 to 306 facing in a direction intersecting both the translucent main surface 301 and the translucent back surface 302 facing opposite to each other in the z direction and both the translucent main surface 301 and the translucent back surface 302. And have.
  • the translucent main surface 301 faces the same side as the substrate main surface 21, and the translucent back surface 302 faces the same side as the substrate back surface 22.
  • the translucent main surface 301 constitutes the device main surface 11.
  • the back surface 22 of the substrate constitutes the back surface 12 of the device.
  • the translucent side surface 303 faces the same side as the substrate side surface 23, the translucent side surface 304 faces the same side as the substrate side surface 24, the translucent side surface 305 faces the same side as the substrate side surface 25, and the translucent side surface 306 faces the substrate side surface 26. Facing the same side as.
  • the translucent side surface 303 covers a part of the substrate side surface 23 in the z direction and the entire x direction, and the translucent side surface 304 covers a part of the substrate side surface 24 in the z direction and the entire x direction.
  • the translucent side surface 305 covers a part of the substrate side surface 25 in the z direction and the entire y direction, and the translucent side surface 306 covers a part of the substrate side surface 26 in the z direction and the entire y direction.
  • the substrate 20 of the present embodiment does not have a part of each of the side surfaces 23 to 26 of the substrate covered by the translucent member 300. That is, in the present embodiment, the portion of the side surfaces 23 to 26 of the substrate that is not covered by the translucent member 300 is exposed to the outside of the semiconductor light emitting device 10.
  • the outer peripheral portion of the substrate 20 is provided with a recessed portion that is recessed inward over the entire circumference. More specifically, a recess 23a is provided at both ends of the substrate 20 in the y direction closer to the side surface 23 of the substrate, and a recess 24a is provided at the end closer to the side surface 24 of the substrate. It is provided. A recess 25a is provided at both ends of the substrate 20 in the x direction closer to the side surface 25 of the substrate, and a recess 26a is provided at the end closer to the side surface 26 of the substrate.
  • the recessed portion 23a is connected to the recessed portions 25a and 26a, and the recessed portion 24a is connected to the recessed portions 25a and 26a.
  • Each recess 23a, 24a, 25a, 26a is open toward the main surface 21 of the substrate in the z direction. That is, the portion of the substrate side surfaces 23 to 26 near the substrate main surface 21 is located inward from the portion near the substrate back surface 22. More specifically, as shown in FIG. 30, the recessed portions 23a and 24a are formed over the entire main surface layer 20A and the intermediate layer 20C of the substrate 20 in the z direction. Further, the recessed portions 23a and 24a are formed over a part of the back surface layer 20B of the substrate 20 closer to the intermediate layer 20C in the z direction.
  • the recessed portions 25a and 26a are formed over the entire main surface layer 20A and the intermediate layer 20C of the substrate 20 in the z direction, similarly to the recessed portions 23a and 24a, and are formed in the z direction. It is formed over a part of the back surface layer 20B of the substrate 20 that is closer to the intermediate layer 20C.
  • the substrate side surface 23 has a substrate side surface 23U corresponding to the recessed portion 23a, and a substrate side surface 23L closer to the substrate back surface 22 than the recessed portion 23a. In the x direction, the substrate side surface 23U is located inward from the substrate side surface 23L.
  • the substrate side surface 24 has a substrate side surface 24U corresponding to the recessed portion 24a and a substrate side surface 24L closer to the substrate back surface 22 than the recessed portion 24a. In the x direction, the substrate side surface 24U is located inward from the substrate side surface 24L.
  • the substrate side surface 25 has a substrate side surface 25U corresponding to the recess 25a and a substrate side surface 25L closer to the substrate back surface 22 than the recess 25a. In the y direction, the substrate side surface 25U is located inward from the substrate side surface 25L.
  • the substrate side surface 26 has a substrate side surface 26U corresponding to the recessed portion 26a and a substrate side surface 26L closer to the substrate back surface 22 than the recessed portion 26a. In the y direction, the substrate side surface 26U is located inward from the substrate side surface 26L.
  • the lengths of the board side surfaces 23U to 26U in the z direction are equal to each other.
  • the lengths of the substrate side surfaces 23L to 26L in the z direction are equal to each other.
  • the board side surface 23U is connected to the board side surfaces 25U and 26U, and the board side surface 24U is connected to the board side surfaces 25U and 26U.
  • a translucent member 300 is provided in each of the recesses 23a, 24a, 25a, and 26a. Therefore, each of the substrate side surfaces 23U to 26U is covered with the translucent member 300. More specifically, the translucent member 300 has a light emitting side cover portion 307 provided in the recessed portion 23a and side surface side cover portions 308A to 308C provided in the recessed portions 24a, 25a, 26a. ..
  • the side surface side cover portion 308A has a translucent side surface 304
  • the side surface side cover portion 308B has a translucent side surface 305
  • the side surface side cover portion 308C has a translucent side surface 306.
  • the thickness of the light emitting side cover portion 307 (the length of the light emitting side cover portion 307 in the y direction) is the thickness of the side surface side cover portion 308A (the length of the side surface side cover portion 308A in the y direction). It is thinner than the thickness of the side cover portion 308B (the length of the side cover portion 308B in the x direction) and the thickness of the side cover portion 308C (the length of the side cover portion 308C in the x direction). In the present embodiment, the thicknesses of the side cover portions 308A to 308C are equal to each other.
  • the thickness of the light emitting side cover portion 307 and the thickness of the side surface side cover portions 308A to 308C can be arbitrarily changed.
  • the thickness of the light emitting side cover portion 307 may be equal to the thickness of the side surface side cover portions 308A to 308C. Further, the thicknesses of the side cover portions 308A to 308C may be different from each other.
  • each of the substrate side surfaces 23L to 26L is a surface exposed to the outside of the semiconductor light emitting device 10.
  • the substrate side surface 23L and the translucent side surface 303 constitute the device side surface 13
  • the substrate side surface 24L and the translucent side surface 304 constitute the device side surface 14
  • the substrate side surface 25L and the translucent side surface 305 form the device side surface 13.
  • the side surface 15 of the device is configured, and the side surface 26L of the substrate and the side surface 306 of the translucent light form the side surface 16 of the device.
  • the manufacturing method of the semiconductor light emitting device 10 includes an element mounting step, a wire forming step, a substrate processing step, a translucent layer forming step, a cutting step, and a mirror surface processing step.
  • the element mounting step, the wire forming step, the substrate processing step, the translucent layer forming step, the cutting step, and the mirror surface processing step are carried out in this order.
  • the process order of the manufacturing method of the semiconductor light emitting device 10 can be arbitrarily changed, and for example, the substrate processing process may be performed before the element mounting process.
  • the element mounting step and the wire forming step are the same as the element mounting step and the wire forming step of the second embodiment.
  • the substrate 920 has a multilayer structure in which a plurality of layers are laminated in the thickness direction (z direction) of the substrate 920.
  • the substrate 920 includes a main surface layer 920A including the substrate main surface 921, a back surface layer 920B including the substrate back surface 922, and an intermediate layer 920C arranged between the main surface layer 920A and the back surface layer 920B in the z direction.
  • the main surface layer 920A corresponds to the main surface layer 20A of the substrate 20
  • the back surface layer 920B corresponds to the back surface layer 20B of the substrate
  • the intermediate layer 920C corresponds to the intermediate layer 20C of the substrate 20.
  • the substrate 920 is placed on the dicing tape DT. Subsequently, for example, a dicing blade is used to form a plurality of grooves 927 in the substrate 920. That is, the substrate 920 is not cut in the substrate processing process.
  • the groove 927 is formed along each of the x direction and the y direction so as to be the size of the substrate 20 when viewed from the z direction. In the present embodiment, as shown in FIG. 31, the groove 927 is formed so that the bottom surface thereof is closer to the back surface surface 922 of the substrate than the boundary between the intermediate layer 920C and the back surface layer 920B in the z direction.
  • the translucent layer 960 is formed.
  • the translucent layer 960 is a layer constituting the translucent member 300, and is formed of a transparent resin material.
  • the transparent resin material include epoxy resin, polycarbonate resin, and acrylic resin.
  • the translucent layer 960 seals the semiconductor light emitting device 60.
  • the translucent layer 960 seals each of a plurality of semiconductor light emitting elements 60, a plurality of switching elements 70, and a plurality of capacitors 80. That is, the translucent layer 960 covers all the semiconductor light emitting elements 60, all the switching elements 70, and all the capacitors 80 mounted on the substrate 920. Further, the translucent layer 960 is embedded in each groove 927.
  • the translucent layer 960 and the substrate 920 are cut along the cutting line CL shown by the alternate long and short dash line. That is, in the cutting step, the translucent layer 960 and the substrate 920 are cut along the groove 927 when viewed from the z direction. As a result, a plurality of assembly ASs in which the semiconductor light emitting element 60, the switching element 70, and the plurality of capacitors 80 mounted on the individualized substrate 920 are sealed by the translucent layer 960 are formed. To. After that, the dicing tape DT is removed from each assembly AS.
  • the translucent side surface 963 facing the same side as the light emitting element side surface 63 which is the light emitting surface of the semiconductor light emitting element 60 in the translucent layer 960 and the light emitting element side surface 63 in the substrate 920.
  • Both sides of the substrate side surface 923 facing the same side are mirror-processed. Specifically, it is polished inward in the y direction from the translucent side surface 963 and the substrate side surface 923 before the mirror surface processing shown by the alternate long and short dash line by the mirror surface processing device.
  • the substrate 20 and the translucent member 300 are formed.
  • the translucent side surface 303 (see FIG. 30) of the translucent member 300 becomes a mirror-finished smooth surface.
  • the translucent side surfaces 304 to 306 are dicing side surfaces formed by dicing in the cutting step. Cutting marks by the dicing blade are formed on the translucent side surfaces 304 to 306, which are the dicing side surfaces. Therefore, the translucent side surface 303 is a flatter surface than the translucent side surfaces 304 to 306.
  • the surface roughness can be indicated by, for example, the arithmetic mean roughness (Ra).
  • the semiconductor light emitting device 10 is a translucent translucent member that encloses a substrate 20 having a substrate main surface 21, a semiconductor light emitting element 60 mounted on the substrate main surface 21, and a semiconductor light emitting element 60. It is equipped with 300.
  • the substrate 20 has a substrate side surface 23 which is a light emitting side substrate side surface facing the same side as the light emitting element side surface 63 which is a light emitting surface of the semiconductor light emitting element 60.
  • the translucent member 300 has a light emitting side cover portion 307 that covers the substrate side surface 23U of the substrate side surface 23.
  • the light emitting side cover portion 307 has a translucent side surface 303 which is a translucent surface facing the same side as the light emitting element side surface 63.
  • the translucent side surface 303 is a mirror-finished smooth surface.
  • the translucent member 300 covers the substrate side surface 23U, the translucent side surface 303 and the substrate side surface 23L are mirror-finished, and the substrate side surface 23U of the substrate side surfaces 23 is not mirror-finished.
  • the machining debris on the substrate side surface 23U does not adhere to the mirror surface processing machine.
  • the translucent member 300 has side surface side cover portions 308A to 308C that cover the substrate side surfaces 24U to 26U among the substrate side surfaces 24 to 26 of the substrate 20.
  • the side surface side cover portions 308A to 308C have translucent side surfaces 304 to 306 which are dicing side surfaces on which cutting marks are formed.
  • the translucent side surface 303 which is a translucent surface, is a flatter surface than the translucent side surfaces 304 to 306.
  • the translucent side surface 303 which is the translucent surface
  • the manufacturing cost can be reduced as compared with the case where at least one of the translucent side surfaces 304 to 306 is mirror-processed in addition to the translucent side surface 303.
  • the distance between the substrate side surface 23U and the translucent side surface 303 is the distance between the substrate side surface 24U and the translucent side surface 304, and the distance between the substrate side surface 25U and the translucent side surface 305. It is shorter than the distance between the substrate side surface 26U and the translucent side surface 306.
  • the thickness of the light emitting side cover portion 307 through which the light from the semiconductor light emitting element 60 passes in the y direction (light emission direction) becomes thin. Therefore, it is possible to reduce the possibility that the light from the semiconductor light emitting element 60 is scattered by the translucent member 200.
  • the method for manufacturing the semiconductor light emitting device 10 includes a step of preparing a substrate 920 having a substrate main surface 921, a step of mounting a plurality of semiconductor light emitting elements 60 on the substrate main surface 921, and a step of mounting the plurality of semiconductor light emitting elements 60 on the substrate main surface 921.
  • a step of polishing each of the substrate side surfaces 923 facing the same side as the element side surface 63 is provided.
  • the translucent layer 960 embedded in the groove 927 of the substrate 920 covers a part of the substrate side surface 923, the translucent side surface 963 and a part of the substrate side surface 923 are mirror-finished. That is, the side surface of the substrate side surface 923 corresponding to the groove 927 is not mirror-finished.
  • the risk of formation can be reduced. Therefore, since the possibility that the light from the semiconductor light emitting element 60 is scattered by the cutting marks (polishing marks) when passing through the translucent side surface 963 is reduced, it is possible to suppress the decrease in the light output of the semiconductor light emitting device 10.
  • the groove 927 is provided so that the bottom surface thereof is closer to the back surface surface 922 of the substrate than the boundary between the intermediate layer 920C and the back surface layer 920B of the substrate 920.
  • the translucent layer 960 is located closer to the back surface of the substrate 922 than the metal layer 27 of the intermediate layer 920C among the side surfaces of the substrate other than the side surface of the substrate 923 and the side surface of the substrate (hereinafter, “the side surface of the substrate 923, etc.”). Therefore, even if water infiltrates into the substrate 920 from the outside of the substrate 920 via the side surface 923 of the substrate or the like, the metal layer 27 can prevent the moisture from infiltrating into the main surface of the substrate 921. Therefore, it is possible to prevent moisture from adhering to the semiconductor light emitting element 60, the switching element 70, the capacitor 80, the wires W1 to W3, and the wiring 30 on the main surface side mounted on the main surface 21 of the substrate.
  • each of the above embodiments is an example of possible embodiments of the semiconductor light emitting device according to the present disclosure, and is not intended to limit the embodiments.
  • the semiconductor light emitting device according to the present disclosure may take a form different from the form exemplified in each of the above-described embodiments.
  • One example thereof is a form in which a part of the configuration of each of the above embodiments is replaced, changed, or omitted, or a new configuration is added to each of the above embodiments.
  • the following modification examples can be combined with each other as long as they are not technically inconsistent.
  • the parts common to each of the above embodiments are designated by the same reference numerals as those of the above embodiments, and the description thereof will be omitted.
  • the semiconductor light emitting device 10 includes a translucent member 90 and a sealing resin 100 of the first embodiment, and a second translucent member 220 of the second embodiment.
  • the translucent member 90 and the sealing resin 100 are the same as the translucent member 90 and the encapsulating resin 100 of the first embodiment.
  • the second translucent member 220 includes a resin main surface 101 of the sealing resin 100, resin side surfaces 103 to 106 (resin side surfaces 105 and 106 are not shown in FIG. 35), a translucent side surface 93 of the translucent member 90, and a substrate 20. It is formed so as to cover each of the substrate side surfaces 23 to 26 (in FIG. 35, the substrate side surfaces 25 and 26 are not shown).
  • the translucent side surface 93 of the modified semiconductor light emitting device 10 shown in FIG. 35 is not exposed to the outside of the semiconductor light emitting device 10.
  • the second translucent member 220 does not cover the back surface 22 of the substrate.
  • the second translucent side surface 223 of the second translucent member 220 is a surface facing the same side as the light emitting element side surface 63, which is the light emitting surface of the semiconductor light emitting element 60, and is a mirror-finished smooth surface.
  • the second translucent side surface 224 to 226 is an example of the dicing side surface as in the second embodiment. Therefore, as in the second embodiment, the second translucent side surface 223 is a flatter surface than the second translucent side surface 224 to 226.
  • the thickness of the mirror-finished light emitting side cover portion 228 is thinner than the thickness of the mirror-finished side surface side cover portion 229A.
  • the thickness of the light emitting side cover portion 228 is thinner than the thickness of the side surface side cover portions 229B and 229C that have not been mirror-processed.
  • the semiconductor light emitting device 10 includes a translucent member 90 and a sealing resin 100 of the first embodiment, and a translucent member 300 of the third embodiment.
  • the translucent member 90 and the sealing resin 100 are the same as the translucent member 90 and the encapsulating resin 100 of the first embodiment.
  • the translucent member 300 has a different configuration from that of the third embodiment. Specifically, the translucent member 300 includes a resin main surface 101 of the sealing resin 100, resin side surfaces 103 to 106 (resin side surfaces 105 and 106 are not shown in FIG. 35), and a translucent side surface 93 of the translucent member 90.
  • the substrate 20 is formed so as to cover each of the recesses 23a to 26a of the substrate side surfaces 23 to 26 (the substrate side surfaces 25 and 26 are not shown in FIG. 35). That is, unlike the first embodiment, the translucent side surface 93 of the modified semiconductor light emitting device 10 shown in FIG. 35 is not exposed to the outside of the semiconductor light emitting device 10.
  • the translucent member 300 does not cover the back surface 22 of the substrate.
  • the translucent side surface 303 of the translucent member 300 is a surface facing the same side as the light emitting element side surface 63, which is the light emitting surface of the semiconductor light emitting element 60, and is a mirror-finished smooth surface.
  • the resin side surface 103 of the sealing resin 100 may be located closer to the substrate side surface 24 than the substrate side surface 23.
  • the range in which the translucent member 90 covers the semiconductor light emitting device 60 can be arbitrarily changed.
  • the translucent member 90 may be configured not to cover at least one of the side surfaces 64 to 66 of the light emitting element of the semiconductor light emitting element 60. That is, the translucent member 90 may be configured to cover at least the light emitting element side surface 63 which is the light emitting surface among the light emitting element side surfaces 63 to 66 of the semiconductor light emitting element 60.
  • the translucent back surface 92 of the translucent member 90 and the light emitting element back surface 62 of the semiconductor light emitting element 60 do not have to be flush with each other.
  • the translucent back surface 92 may be provided so as to project from the light emitting element back surface 62 to the side opposite to the light emitting element main surface 61.
  • the distance HA between the substrate main surface 21 of the substrate 20 and the translucent main surface 91 of the translucent member 90 can be arbitrarily changed.
  • the distance HA may be greater than or equal to the distance HB between the substrate main surface 21 and the switching element main surface 71 of the switching element 70.
  • the distance HA may be equal to or greater than the distance HC between the main surface 21 of the substrate and the main surface 83 of the capacitor 80.
  • the translucent member 90 may be provided so as to be adjacent to the capacitor 80 in the x direction. Further, the translucent member 90 may be provided so as to seal the capacitor 80.
  • the translucent member 90 may be provided so as to be adjacent to the switching element 70 in the y direction.
  • the material of the sealing resin 100 can be arbitrarily changed as long as it is a material having a linear expansion coefficient smaller than the linear expansion coefficient of the translucent member 90.
  • the sealing resin 100 may be made of a material having a glass transition temperature equal to or lower than the glass transition temperature of the translucent member 90. Further, the sealing resin 100 may be configured not to contain a filler.
  • the translucent side surface 93 which is the translucent surface of the translucent member 90, does not have to be a mirror-processed smooth surface.
  • the translucent side surface 93 may be a dicing side surface cut by a dicing blade.
  • the resin side surface 103 of the sealing resin 100 and the substrate side surface 23 of the substrate 20 may be dicing surfaces cut by a dicing blade.
  • the substrate 20 may be a multilayer board as in the second embodiment.
  • the semiconductor light emitting device 60 is mounted on the substrate 820 after the translucent layer 890 seals the semiconductor light emitting element 60, but the present invention is not limited to this.
  • the semiconductor light emitting element 60 may be sealed by the translucent layer 890.
  • the main surface side cover portion 227 may be omitted from the second translucent member 220. Further, at least one of the side cover portions 229A to 229C may be omitted from the second translucent member 220. In short, the second translucent member 220 may have at least a light emitting side cover portion 228.
  • the positional relationship between the light emitting side cover portion 228 of the second translucent member 220 and the substrate side surface 23 of the substrate 20 can be arbitrarily changed.
  • the front end surface of the light emitting side cover portion 228 (the surface of the light emitting side cover portion 228 in the z direction closest to the substrate back surface 22) may be located closer to the substrate main surface 21 with respect to the substrate back surface 22. ..
  • the front end surface of the light emitting side cover portion 228 is preferably located closer to the back surface 22 of the substrate than the metal layer 27 of the side surface 23 of the substrate in the z direction.
  • the positional relationship between the side cover portions 229A to 229C of the second translucent member 220 with the substrate side surface 23 of the substrate 20 can be arbitrarily changed.
  • the tip surface of the side surface side cover portions 229A to 229C (the surface of the side surface side cover portions 229A to 229C in the z direction closest to the substrate back surface 22) is located closer to the substrate main surface 21 with respect to the substrate back surface 22. May be.
  • the front end surfaces of the side cover portions 229A to 229C are preferably located closer to the back surface 22 of the substrate than the metal layer 27 among the side surfaces 24 to 26 of the substrate in the z direction.
  • the thickness of the light emitting side cover portion 228 may be greater than or equal to the thickness of each of the side surface side cover portions 229A to 229C.
  • the distance between the first translucent side surface 213 and the second translucent side surface 223 in the y direction is the distance between the first translucent side surface 214 and the second translucent side surface 224 in the y direction, that is, the first translucency. It may be greater than or equal to the distance between the light side surface 215 and the second translucent side surface 225 in the x direction, and the distance between the first translucent side surface 216 and the second translucent side surface 226 in the x direction.
  • the thickness of each of the side cover portions 229A to 229C can be arbitrarily changed.
  • the thickness of the side surface side cover portion 229A, the thickness of the side surface side cover portion 229B, and the thickness of the side surface side cover portion 229C may be different from each other.
  • At least one of the switching element 70 and the capacitor 80 may be arranged outside the first translucent member 210 and sealed by the second translucent member 220.
  • the positional relationship between the light emitting side cover portion 307 of the translucent member 300 and the substrate side surface 23 of the substrate 20 can be arbitrarily changed.
  • the front end surface of the light emitting side cover portion 307 (the surface of the light emitting side cover portion 307 in the z direction closest to the substrate back surface 22) is the substrate main surface 21 of the substrate side surface 23 of the substrate side surface 23 rather than the metal layer 27. It may be located nearby.
  • the positional relationship between the side cover portions 308A to 308C of the translucent member 300 with the substrate side surface 23 of the substrate 20 can be arbitrarily changed.
  • the front end surface of the side surface side cover portions 308A to 308C (the surface of the side surface side cover portions 308A to 308C closest to the substrate back surface 22 in the z direction) is from the metal layer 27 of the substrate side surfaces 24 to 26 in the z direction. May be located near the main surface 21 of the substrate.
  • the thickness of the light emitting side cover portion 307 may be greater than or equal to the thickness of each of the side surface side cover portions 308A to 308C.
  • the distance between the translucent side surface 303 and the substrate side surface 23U in the y direction is the distance between the translucent side surface 304 and the substrate side surface 24U in the y direction, and the distance between the translucent side surface 305 and the substrate side surface 25U in the x direction. It may be greater than or equal to the distance between them and the distance between the translucent side surface 306 and the substrate side surface 26U in the x direction.
  • the switching element 70 may be configured to be externally attached to the semiconductor light emitting device 10.
  • the substrate 20 may be a single-layer substrate as in the first embodiment.
  • the configuration of the main surface side wiring 30 of the substrate 20 can be arbitrarily changed.
  • the main surface side wiring 30 includes a first drive wiring 35, a pair of second drive wirings 36A and 36B, a pair of third drive wirings 37A and 37B, and a control wiring 38. have.
  • the first drive wiring 35 is a wiring on which the semiconductor light emitting element 60 and the switching element 70 are mounted.
  • the first drive wiring 35 includes a light emitting element mounting portion 35a on which the semiconductor light emitting element 60 is mounted, and a switching element mounting portion 35b on which the switching element 70 is mounted.
  • the light emitting element mounting portion 35a is formed in a protruding shape protruding in the y direction from the switching element mounting portion 35b.
  • the light emitting element mounting portion 35a is arranged near the substrate side surface 23 with respect to the switching element mounting portion 35b in the y direction.
  • the length of the light emitting element mounting portion 35a in the x direction is shorter than the length of the switching element mounting portion 35b in the x direction, and the length of the light emitting element mounting portion 35a in the y direction is larger than the length of the switching element mounting portion 35b in the y direction. short.
  • the semiconductor light emitting device 60 is bonded to the light emitting element mounting portion 35a by a conductive bonding material SD (not shown). As a result, the second electrode 68 is electrically connected to the light emitting element mounting portion 35a.
  • the translucent member 90 seals the semiconductor light emitting device 60 as in the first embodiment.
  • the translucent side surface 93 which is the translucent surface of the translucent member 90, is flush with the resin side surface 103 (not shown) of the sealing resin 100 and the substrate side surface 23, and is exposed from the semiconductor light emitting device 10.
  • the switching element mounting portion 35b is arranged closer to the substrate side surface 24 than the substrate side surface 23 of the substrate main surface 21.
  • the shape of the switching element mounting portion 35b viewed from the z direction is a substantially rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.
  • the switching element 70 is bonded to the switching element mounting portion 35b by the conductive bonding material SD.
  • the first drive electrode 73 (not shown) of the switching element 70 is electrically connected to the switching element mounting portion 35b.
  • the second electrode 68 of the semiconductor light emitting device 60 and the first drive electrode 73 of the switching element 70 are electrically connected via the first drive wiring 35. Is connected.
  • the switching element 70 is arranged so that the x direction is the lateral direction and the y direction is the longitudinal direction. Therefore, the two second drive electrodes 74 are arranged at intervals in the x direction.
  • the control electrodes 75 are arranged at the corners of the four corners of the main surface 71 of the switching element, which are close to the side surface 24 of the substrate and the side surface 26 of the substrate.
  • the pair of second drive wirings 36A and 36B are wirings that electrically connect a plurality of capacitors 80 and the semiconductor light emitting element 60, and are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction. There is.
  • the pair of second drive wirings 36A and 36B are dispersedly arranged on both sides of the light emitting element mounting portion 35a in the x direction. In the illustrated example, the second drive wirings 36A and 36B extend in the x direction.
  • the pair of second drive wirings 36A and 36B are arranged at both ends of the main surface 21 of the board in the y direction, whichever is closer to the side surface 23 of the board.
  • the end closer to the light emitting element mounting portion 35a is arranged at a position overlapping the switching element mounting portion 35b when viewed from the y direction. ing. That is, a part of each of the pair of second drive wirings 36A and 36B is inserted into the recess formed by the switching element mounting portion 35b and the light emitting element mounting portion 35a.
  • the pair of third drive wirings 37A and 37B are wirings that electrically connect a plurality of capacitors 80 and a switching element 70, and are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction. ..
  • the pair of third drive wirings 37A and 37B are dispersedly arranged on both sides of the switching element mounting portion 35b in the x direction.
  • the third drive wirings 37A and 37B extend in the y direction. More specifically, the third drive wiring 37A is arranged between the switching element mounting portion 35b and the substrate side surface 25 in the x direction.
  • the third drive wiring 37A is arranged at a position overlapping with the second drive wiring 36A when viewed from the y direction.
  • the third drive wiring 37B is arranged between the switching element mounting portion 35b and the substrate side surface 26 in the x direction.
  • the third drive wiring 37B is arranged at a position overlapping with the second drive wiring 36B when viewed from the y direction.
  • the plurality of capacitors 80 are arranged closer to the substrate side surface 23 than the switching element 70 in the substrate main surface 21. Further, the plurality of capacitors 80 are dispersedly arranged on both sides of the switching element 70 in the x direction.
  • the capacitor 80 is arranged so as to straddle between the second drive wiring 36A and the third drive wiring 37A in the y direction. More specifically, the first terminal 81 of the capacitor 80 is joined to the second drive wiring 36A by the conductive bonding material SD, and the second terminal 82 of the capacitor 80 is third driven by the conductive bonding material SD. It is joined to the wiring 37A.
  • Another capacitor 80 out of the plurality of capacitors 80 is arranged so as to straddle between the second drive wiring 36B and the third drive wiring 37B in the y direction. More specifically, the first terminal 81 of the capacitor 80 is bonded to the second drive wiring 36B by the conductive bonding material SD, and the second terminal 82 of the capacitor 80 is third driven by the conductive bonding material SD. It is joined to the wiring 37B.
  • the first electrode 67 of the semiconductor light emitting element 60 is connected to the second drive wiring 36A by one or more wires W4, and is connected to the second drive wiring 36B by one or more wires W5. ing.
  • Each of the wires W4 and W5 is connected to the first electrode 67 via the opening 99 of the translucent member 90, similarly to the first wire W1 of the first embodiment. That is, each of the wires W4 and W5 is configured so as not to interfere with the translucent member 90. Therefore, each of the wires W4 and W5 is entirely sealed with the sealing resin 100.
  • the second drive electrode 74 of the switching element 70 is connected to the third drive wiring 37A by one or more wires W6, and is connected to the third drive wiring 37B by one or more wires W7. ing. Each of the wires W6 and W7 is entirely sealed with the sealing resin 100.
  • the control electrode 75 of the switching element 70 is connected to the control wiring 38 by the wire W8.
  • the control wiring 38 is arranged at the corners of the board side surface 24 and the board side surface 26 among the four corners of the board main surface 21. When viewed from the z direction, the control wiring 38 is arranged so as to be adjacent to the control electrode 75 in the x direction.
  • the entire wire W8 is sealed with the sealing resin 100.
  • FIG. 38 shows an example of the circuit configuration of the laser system LS to which the semiconductor light emitting device 10 is applied.
  • a series body of the semiconductor light emitting element 60 and the switching element 70 is connected in parallel with the capacitor 80. More specifically, the second electrode 68, which is the cathode electrode of the semiconductor light emitting device 60, is connected to the first drive electrode 73, which is the drain electrode of the switching element 70. The first electrode 67, which is the anode electrode of the semiconductor light emitting device 60, is connected to the first terminal 81 of the capacitor 80, and the second drive electrode 74, which is the source electrode of the switching element 70, is connected to the second terminal 82 of the capacitor 80. Has been done.
  • the semiconductor light emitting device 10 has a connection electrode 51, a power supply electrode 52, a control electrode 53, a ground electrode 54, and a source connection electrode 55 as the exterior electrode 50.
  • the connection electrode 51 is connected to the second electrode 68 of the semiconductor light emitting device 60 and the first drive electrode 73 of the switching element 70.
  • the first terminal 81 of the capacitor 80 and the first electrode 67 of the semiconductor light emitting element 60 are connected to the power electrode 52, and the second terminal 82 of the capacitor 80 and the second drive of the switching element 70 are connected to the ground electrode 54.
  • the electrode 74 is connected.
  • the second drive electrode 74 of the switching element 70 is connected to the source connection electrode 55.
  • a control electrode 75 which is a gate electrode of the switching element 70, is connected to the control electrode 53.
  • the positive terminal of the drive power supply DV is connected to the power supply electrode 52 via the current limiting resistance R, and the negative terminal of the drive power supply DV is connected to the ground electrode 54.
  • the driver circuit PM is connected to the control electrode 53 and the source connection electrode 55.
  • the diode D is connected so as to be antiparallel to the semiconductor light emitting device 60.
  • the cathode electrode of the diode D is connected between the current limiting resistance R and the power supply electrode 52, and the anode electrode of the diode D is connected to the connection electrode 51.
  • the laser system LS with such a configuration operates as follows. That is, when the switching element 70 is turned off by the control signal of the driver circuit PM, the capacitor 80 is stored by the drive power supply DV. When the switching element 70 is turned on by the control signal of the driver circuit PM, the capacitor 80 is discharged and a current flows through the semiconductor light emitting element 60. As a result, the semiconductor light emitting device 60 outputs pulsed laser light.
  • the semiconductor light emitting device 10 includes one semiconductor light emitting element 60, but the present invention is not limited to this.
  • the semiconductor light emitting device 10 may include a plurality of semiconductor light emitting elements 60.
  • the two semiconductor light emitting devices 60 are arranged so as to be aligned with each other in the y direction and separated from each other in the x direction.
  • the two semiconductor light emitting devices 60 are arranged between the x directions of the two capacitors 80 which are separated from each other in the x direction.
  • Each semiconductor light emitting device 60 is arranged apart from the capacitor 80 in the x direction.
  • Each semiconductor light emitting element 60 is mounted on the first main surface side wiring 31.
  • each semiconductor light emitting device 60 is joined to the first main surface side wiring 31 by a conductive bonding material. Since the second electrode 68 is formed on the back surface 62 of the light emitting element, the second electrode 68 of each semiconductor light emitting element 60 is electrically connected to the first main surface side wiring 31.
  • the translucent member 90 seals two semiconductor light emitting elements 60.
  • the translucent member 90 of the modified example uses the same material as the translucent member 90 of the first embodiment.
  • the translucent members 90 are arranged apart from each capacitor 80 in the x direction.
  • the translucent member 90 is formed with two openings 99 that individually open the light emitting element main surface 61 of the two semiconductor light emitting elements 60 in the z direction. Each opening 99 opens the first electrode 67 formed on the main surface 61 of the light emitting element in the z direction.
  • the first electrode 67 of each semiconductor light emitting device 60 and the second drive electrode 74 of the switching element 70 are connected by a plurality of first wires W1.
  • Each first wire W1 is connected to the first electrode 67 of the semiconductor light emitting element 60 via the opening 99 of the translucent member 90.
  • the sealing resin 100 seals the switching element 70, each capacitor 80, and each wire W1 to W3 together with the translucent member 90. That is, the sealing resin 100 seals the two semiconductor light emitting elements 60. The sealing resin 100 penetrates into each opening 99 of the translucent member 90.
  • the translucent member 90 may be individually provided for the two semiconductor light emitting elements 60.
  • the translucent member 90 provided in one semiconductor light emitting device 60 and the translucent member 90 provided in the other semiconductor light emitting element 60 may be arranged apart from each other in the x direction, or may be arranged apart from each other in the x direction. They may be arranged in contact with each other.
  • adjacent semiconductor light emitting elements 60 may be in contact with each other in the arrangement direction thereof.
  • the translucent member 90 is not interposed between the semiconductor light emitting elements 60 adjacent to each other in the arrangement direction of the semiconductor light emitting elements 60.
  • the translucent member 90 may have one opening 99 through which the first electrode 67 of each semiconductor light emitting device 60 opens.
  • the semiconductor light emitting device 10 may further include a driver circuit 110 for driving the switching element 70.
  • the driver circuit 110 is arranged on the side opposite to the semiconductor light emitting device 60 with respect to the switching element 70 in the y direction.
  • the driver circuit 110 is a circuit that supplies a control signal for controlling the switching element 70 to the control electrode 75 of the switching element 70, and includes a substrate on which a control signal generation circuit or the like is formed.
  • the driver circuit 110 has a driver main surface 111 that faces the same side as the substrate main surface in the z direction. A plurality of (six in the illustrated example) driver electrodes 112 are formed on the driver main surface 111.
  • the main surface side wiring 30 includes a driver mounting wiring 39 and driver wirings 39A to 39D.
  • the driver mounting wiring 39 is a wiring on which the driver circuit 110 is mounted.
  • the driver circuit 110 is joined to the driver mounting wiring 39 by a conductive joining material.
  • a ground electrode is formed on the back surface of the driver circuit 110 facing the side opposite to the driver main surface 111. Therefore, the ground electrode of the driver circuit 110 is electrically connected to the driver mounting wiring 39.
  • the driver wirings 39A to 39D are arranged on both sides of the driver mounting wiring 39 in the x direction. More specifically, the driver wirings 39A and 39B are arranged closer to the board side surface 25 than the driver mounting wiring 39 on the board main surface 21, and the driver wirings 39C and 39D are located on the board main surface 21 and are closer to the driver. It is arranged closer to the side surface 26 of the board than the mounting wiring 39.
  • the driver wirings 39A to 39D and the plurality of driver electrodes 112 of the driver circuit 110 are individually connected by the fourth wires W9A to W9D.
  • the driver circuit 110 and the switching element 70 are electrically connected to each other. More specifically, the second drive electrode 74 of the switching element 70 and the driver electrode 112 of the driver circuit 110 are connected by a second wire W2.
  • the control electrode 75 of the switching element 70 and the driver electrode 112 of the driver circuit 110 are connected by a third wire W3.
  • the driver ground electrode 56 electrically connected to the driver mounting wiring 39 and the driver wirings 39A to 39D are individually electrically connected as the exterior electrode 50.
  • the driver electrodes 57A to 57D are formed.
  • the control electrode 53 and the ground electrode 54 are omitted on the back surface 22 of the substrate.
  • the driver ground electrode 56 and the driver electrodes 57A to 57D are arranged closer to the side surface 24 of the substrate than the connection electrode 51 and the power supply electrode 52 on the back surface 22 of the substrate.
  • the driver electrodes 57A to 57D are arranged on both sides of the driver ground electrode 56 in the x direction.
  • the driver electrodes 57A and 57B are arranged closer to the board side surface 25 than the driver ground electrode 56 on the back surface 22 of the substrate, and the driver electrodes 57C and 57D are located on the back surface 22 of the substrate and the driver ground electrode 56. It is arranged closer to the side surface 26 of the substrate than.
  • the driver ground electrode 56 is arranged at a position overlapping the driver mounting wiring 39 when viewed from the z direction, and is connected to the driver mounting wiring 39 by a plurality of fifth connection wirings 45.
  • the driver electrode 57A is arranged at a position overlapping the driver wiring 39A when viewed from the z direction, and is connected to the driver wiring 39A by the sixth connection wiring 46A.
  • the driver electrode 57B is arranged at a position overlapping the driver wiring 39B when viewed from the z direction, and is connected to the driver wiring 39B by the sixth connection wiring 46B.
  • the driver electrode 57C is arranged at a position overlapping the driver wiring 39C when viewed from the z direction, and is connected to the driver wiring 39C by the sixth connection wiring 46C.
  • the driver electrode 57D is arranged at a position overlapping the driver wiring 39D when viewed from the z direction, and is connected to the driver wiring 39D by the sixth connection wiring 46D.
  • the sealing resin 100 seals each of the translucent member 90, the switching element 70, each capacitor 80, the driver circuit 110, and each wire W1 to W3, W9A to W9D.
  • the driver circuit 110 is compared with the configuration provided outside the semiconductor light emitting device 10.
  • the conductive path between the 110 and the switching element 70 can be shortened. Therefore, the inductance caused by the length of this conductive path can be reduced.
  • the semiconductor light emitting element 60 is arranged between the x directions of the two capacitors 80, but the positional relationship between the capacitor 80 and the semiconductor light emitting element 60 is not limited to this.
  • the semiconductor light emitting device 60 may be arranged near the substrate side surface 25 with respect to the two capacitors 80 of the substrate main surface 21, or may be arranged near the substrate side surface 26 with respect to the two capacitors 80. May be done.
  • the capacitor 80 may be configured to be externally attached to the semiconductor light emitting device 10.
  • the configuration of the exterior electrode 50 can be arbitrarily changed. That is, the semiconductor light emitting device 10 is not limited to the surface mount type package structure.
  • the back surface side insulating layer 22a may be omitted from the substrate back surface 22 of the substrate 20.
  • the connection wiring 40 is provided in the substrate 20, but the present invention is not limited to this.
  • the connection wiring 40 may connect the main surface side wiring 30 and the exterior electrode 50 via the substrate side surfaces 23 to 26.
  • the metal layer 27 of the intermediate layer 20C may be connected to the ground electrode 54.
  • the metal layer 27 and the fourth connection wiring 44 may be connected to the ground electrode 54.
  • the metal layer 27 of the intermediate layer 20C may be connected to the ground electrode 54.
  • both the switching element 70 and the capacitor 80 may be configured to be externally attached to the semiconductor light emitting device 10. That is, the semiconductor light emitting device 10 includes a substrate 20, a semiconductor light emitting element 60 mounted on the main surface 21 of the substrate, a wire electrically connected to the semiconductor light emitting element 60, a translucent member 90, and a sealing resin 100. And may be configured to include.
  • the switching element 70 and the capacitor 80 may be mounted on the back surface 22 of the substrate 20.
  • the exterior electrode 50 is provided at a position opposite to the substrate main surface 21 with respect to the substrate back surface 22 with respect to the switching element 70 and the capacitor 80 mounted on the substrate back surface 22. ..
  • the back surface 22 of the substrate has a frame-shaped insulating layer (not shown) surrounding the switching element 70 and the capacitor 80. It is provided.
  • An exterior electrode 50 is formed on the surface of the insulating layer facing the same side as the back surface 22 of the substrate.
  • the connection wiring 40 is provided so as to penetrate the insulating layer and connect to the exterior electrode 50.
  • At least one of the switching element 70 and the capacitor 80 may be mounted on the surface of the main surface layer 20A of the substrate 20 facing the same side as the substrate back surface 22. Further, at least one of the switching element 70 and the capacitor 80 may be mounted on the surface of the intermediate layer 20C of the substrate 20 facing the same side as the back surface 22 of the substrate. Further, at least one of the switching element 70 and the capacitor 80 may be mounted on the surface of the back surface layer 20B of the substrate 20 facing the same side as the substrate main surface 21. In short, at least one of the switching element 70 and the capacitor 80 may be provided inside the substrate 20.
  • the substrate 20 when the substrate 20 is composed of a multilayer substrate as in the second and third embodiments, at least one of the switching element 70 and the capacitor 80 may be provided inside the substrate 20.
  • the translucent side surface 93 of the translucent member 90 may be mirror-finished, and the resin side surface 103 and the substrate side surface 23 may not be mirror-finished.
  • the translucent side surface 93 may be mirror-finished by spraying the abrasive material only on the translucent side surface 93, for example, by using blast polishing.
  • the translucent side surface 93 may be a mirror-finished smooth surface.
  • the semiconductor light emitting device 10 may include a diode D connected in antiparallel to the semiconductor light emitting device 60.
  • each capacitor 80 is connected in series with the semiconductor light emitting device 60, but the present invention is not limited to this. Each capacitor 80 may be connected in parallel with the semiconductor light emitting device 60.
  • Appendix A1 A board with a board main surface and A semiconductor light emitting device mounted on the main surface of the substrate and having a main surface of a light emitting device facing the same side as the main surface of the substrate and a light emitting surface facing a direction intersecting the main surface of the light emitting element.
  • a drive element mounted on the main surface of the substrate and used to drive the semiconductor light emitting element, and A translucent member having a coefficient of linear expansion larger than that of the substrate and transmitting light emitted from the light emitting surface and covering the light emitting surface.
  • a semiconductor light emitting device made of a material having a linear expansion coefficient smaller than that of the translucent member, and comprising a sealing resin for sealing the semiconductor light emitting element and the driving element.
  • the driving element includes a switching element and a capacitor.
  • the first main surface side wiring on which the semiconductor light emitting element is mounted and the second main surface side wiring on which the switching element is mounted are formed at intervals from each other.
  • the capacitor is mounted on both the first main surface side wiring and the second main surface side wiring so as to straddle between the first main surface side wiring and the second main surface side wiring.
  • the driving element includes a switching element. On the main surface of the substrate, a first main surface side wiring on which the semiconductor light emitting element is mounted and a second main surface side wiring on which the switching element is mounted are formed.
  • the switching element has a first drive electrode electrically connected to the first main surface side wiring, a second drive electrode electrically connected to the semiconductor light emitting element, and a control electrode.
  • a third main surface side wiring electrically connected to the control electrode and a fourth main surface side wiring electrically connected to the second drive electrode are further formed.
  • the semiconductor light emitting device according to the appendix A1.
  • the driving element includes a switching element having a switching element main surface facing the same side as the substrate main surface.
  • a main surface side electrode is formed on the main surface of the light emitting device of the semiconductor light emitting device.
  • a drive electrode is formed on the main surface of the switching element of the switching element.
  • the driving element includes a capacitor.
  • the entire capacitor is covered with the sealing resin.
  • the translucent member is provided in and around the semiconductor light emitting device, and covers the light emitting surface.
  • the capacitor and the translucent member are arranged at a distance from each other.
  • the semiconductor light emitting device according to any one of Supplementary A1 to A4, wherein the sealing resin is interposed between the capacitor and the translucent member.
  • the driving element includes a switching element.
  • the entire switching element is covered with the sealing resin.
  • the translucent member is provided in and around the semiconductor light emitting device, and covers the light emitting surface.
  • the switching element and the translucent member are arranged at a distance from each other.
  • the semiconductor light emitting device according to any one of Supplementary A1 to A4, wherein the sealing resin is interposed between the switching element and the translucent member.
  • the semiconductor light emitting device has a back surface of the light emitting device facing the opposite side to the main surface of the substrate.
  • the translucent member has a translucent back surface facing the opposite side to the main surface of the substrate.
  • the driving element includes a switching element having a switching element main surface facing the same side as the substrate main surface.
  • the translucent member has a translucent main surface facing the same side as the substrate main surface. The distance between the substrate main surface and the translucent main surface in the thickness direction of the substrate is smaller than the distance between the substrate main surface and the switching main surface in the thickness direction.
  • the driving element includes a capacitor having a capacitor main surface facing the same side as the substrate main surface.
  • the translucent member has a translucent main surface facing the same side as the substrate main surface. The distance between the substrate main surface and the translucent main surface in the thickness direction of the substrate is smaller than the distance between the substrate main surface and the capacitor main surface in the thickness direction.
  • Appendix A10 A board with a board main surface and A semiconductor light emitting device mounted on the main surface of the substrate and having a main surface of a light emitting device facing the same side as the main surface of the substrate and a light emitting surface facing a direction intersecting the main surface of the light emitting element.
  • a semiconductor light emitting device comprising a sealing resin made of a material having a coefficient of linear expansion smaller than that of the translucent member and sealing the wire.
  • the sealing resin that seals the wire has a smaller linear expansion coefficient than the translucent member, that is, the difference between the linear expansion coefficient of the sealing resin and the linear expansion coefficient of the substrate is , It is smaller than the difference between the linear expansion coefficient of the translucent member and the linear expansion coefficient of the substrate. Therefore, the difference in the amount of thermal expansion and the amount of heat shrinkage between the encapsulating resin and the substrate when the temperature of the semiconductor light emitting device changes is the difference in the amount of thermal expansion and the amount of heat shrinkage between the translucent member and the substrate. Also becomes smaller. Therefore, the semiconductor light emitting device can reduce the load on the wire due to the temperature change.
  • Appendix B1 The process of sealing the semiconductor light emitting device with a light-transmitting layer, A step of mounting the semiconductor light emitting element sealed by the translucent layer and a driving element on the main surface of the substrate. A step of forming a resin layer for sealing the semiconductor light emitting device and the driving element, and Equipped with The coefficient of linear expansion of the translucent layer is larger than the coefficient of linear expansion of the substrate. A method for manufacturing a semiconductor light emitting device, wherein the coefficient of linear expansion of the resin layer is smaller than the coefficient of linear expansion of the translucent layer.
  • Appendix B2 The method for manufacturing a semiconductor light emitting device according to Appendix B1, wherein the resin layer seals the semiconductor light emitting element and the driving element together with the translucent layer.
  • the semiconductor light emitting device has a light emitting element main surface and a main surface side electrode formed on the light emitting element main surface.
  • the drive element includes a switching element having a switching element main surface facing the same side as the substrate main surface and a drive electrode formed on the switching element main surface.
  • Appendix B5 A step of connecting the second wire to the drive electrode is provided.
  • the switching element has a control electrode and has a control electrode.
  • a step of connecting a third wire to the control electrode is provided.
  • the semiconductor light emitting device has a light emitting element main surface facing the same side as the substrate main surface and a light emitting surface facing a direction intersecting with the light emitting element main surface.
  • a step of cutting the resin layer, the substrate, and the translucent layer The method for manufacturing a semiconductor light emitting device according to Supplementary note B1, which comprises a step of mirror-finishing a side surface of the semiconductor light emitting element facing the same side as the light emitting surface in the translucent layer.
  • the semiconductor light emitting device has a light emitting element main surface facing the same side as the substrate main surface and a light emitting surface facing a direction intersecting with the light emitting element main surface.
  • a step of cutting the resin layer, the substrate, and the translucent layer The method for manufacturing a semiconductor light emitting device according to Supplementary note B1, which comprises a step of mirror-finishing a side surface of the semiconductor light emitting device facing the same side as the light emitting surface in each of the resin layer, the substrate, and the translucent layer.
  • a translucent translucent member for encapsulating the semiconductor light emitting device is provided.
  • the substrate has a light emitting side substrate side surface facing the same side as the light emitting surface.
  • the translucent member has a light emitting side cover portion that covers the side surface of the light emitting side substrate.
  • the light emitting side cover portion has a light transmitting surface facing the same side as the light emitting surface.
  • the translucent surface is a mirror-finished smooth surface, which is a semiconductor light emitting device.
  • the substrate has a substrate side surface that intersects the light emitting side substrate side surface when viewed from the thickness direction of the substrate.
  • the translucent member has a side cover portion that covers the side surface of the substrate.
  • the side cover portion has a dicing side surface on which cutting marks are formed.
  • the semiconductor light emitting device according to Appendix C1 wherein the translucent surface is a surface flatter than the dicing side surface.
  • Appendix C3 The semiconductor light emitting device according to Appendix C2, wherein the distance between the light emitting side substrate side surface and the translucent surface is shorter than the distance between the substrate side surface and the dicing side surface when viewed from the thickness direction of the substrate. ..
  • the substrate includes a main surface layer including the main surface of the substrate, a back surface layer including a back surface of the substrate facing the side opposite to the main surface of the substrate, and the main surface layer and the back surface layer in the thickness direction of the substrate. It is a multi-layer board including an intermediate layer arranged between them.
  • the semiconductor light emitting device according to any one of the appendices C1 to C3, wherein the intermediate layer includes a metal layer.
  • Appendix C5 The semiconductor light emitting device according to Appendix C4, wherein the metal layer is arranged at least at a position overlapping the semiconductor light emitting element when viewed from the thickness direction of the substrate.
  • Appendix C8 On the main surface of the substrate, wiring on the main surface side electrically connected to the semiconductor light emitting device is formed.
  • the substrate is provided so as to penetrate the substrate in the thickness direction of the substrate, and has a connection wiring for connecting the main surface side wiring and the exterior electrode.
  • the metal layer is provided with a through hole for separating the metal layer and the connection wiring.
  • Appendix C11 The semiconductor light emitting device according to Appendix C1, wherein the light emitting side cover portion covers the entire side surface of the light emitting side substrate.
  • Appendix C14 The semiconductor light emitting device according to Appendix C12 or C13, wherein the driving element includes at least one of a switching element and a capacitor.
  • the translucent member is A first translucent member provided on the main surface of the substrate and sealing the semiconductor light emitting device, and The semiconductor light emitting device according to Appendix C1, wherein the first translucent member is sealed and the second translucent member including the light emitting side cover portion is provided.
  • the semiconductor light emitting device is mounted on the main surface of the substrate and further includes a driving element used for driving the semiconductor light emitting element.
  • Appendix C17 The semiconductor light emitting device according to Appendix C15 or C16, wherein the second translucent member covers the entire first translucent member.
  • the first translucent member has a first translucent main surface facing the same side as the main surface of the substrate, a first light emitting side surface facing the same side as the light emitting surface, and a side surface on the first light emitting side facing the same side as the light emitting surface, as viewed from the thickness direction of the substrate. It has a first translucent side surface that intersects the light emitting surface, and has.
  • the second translucent member includes a main surface side cover portion that covers the first translucent main surface, a light emitting side cover portion that covers the first light emitting side side surface, and a side surface side cover portion that covers the first translucent side surface. And have, The main surface side cover portion has a second translucent main surface facing the same side as the first transmissive main surface.
  • the light emitting side cover portion has the translucent surface, and the light emitting side cover portion has the translucent surface.
  • the side cover portion has a dicing side surface on which cutting marks are formed.
  • the semiconductor light emission according to any one of the appendices C15 to C17, wherein the distance between the first light emitting side surface and the translucent surface is shorter than the distance between the first translucent side surface and the dicing side surface.
  • Appendix C19 The semiconductor light emitting device according to Appendix C18, wherein the distance between the first translucent main surface and the second translucent main surface is shorter than the distance between the first translucent side surface and the dicing side surface.
  • the substrate has a substrate back surface that faces the side opposite to the substrate main surface.
  • the light emitting side substrate side surface has a first side surface closer to the substrate main surface and a second side surface closer to the substrate back surface than the first side surface, and the first side surface is closer to the second side surface. Is formed in a step shape located inward,
  • the translucent member covers the first side surface and covers the first side surface.
  • a substrate having a substrate main surface and a substrate side surface facing a direction intersecting the substrate main surface.
  • a semiconductor light emitting device mounted on the main surface of the substrate and having a light emitting surface facing in a direction intersecting the main surface of the substrate.
  • a step of preparing a plurality of semiconductor light emitting assemblies including a translucent first translucent layer for encapsulating the semiconductor light emitting device, and a step of preparing a plurality of semiconductor light emitting assemblies.
  • a step of disassembling the semiconductor light emitting assembly by cutting the second translucent layer and A method for manufacturing a semiconductor light emitting device, comprising a step of polishing a translucent surface which is a surface of the second translucent layer facing the same side as the light emitting surface.
  • the substrate includes a main surface layer including the main surface of the substrate, a back surface layer including a back surface of the substrate facing the side opposite to the main surface of the substrate, and the main surface layer and the back surface layer in the thickness direction of the substrate. It is a multi-layer structure including an intermediate layer arranged between them.
  • Conventional side-emitting semiconductor light-emitting devices include, for example, a substrate such as a glass epoxy substrate or a ceramic substrate, a side-emitting semiconductor light-emitting element mounted on the substrate, and a translucent member that seals the semiconductor light-emitting element. (For example, see Japanese Patent Publication No. 2015-510277). The light from the semiconductor light emitting device is emitted through the translucent member.
  • the light-transmitting side surface is mirror-finished with the processing chips from the mirror surface processing on the substrate side surface adhering to the mirror surface processing device. ) May be formed.
  • the light from the semiconductor light emitting element passes through the translucent side surface, it is scattered in the processing marks on the translucent side surface, and the light output is lowered.
  • Cover portion 99 Opening 100 ... Sealing resin 103 ... Resin side surface 200 ... Translucent member 210 ... First translucent member 211 ... First translucent main surface 213 ... First translucent side surface (first light emitting side side surface) ) 214 to 216 ... 1st translucent side surface 220 ... 2nd translucent member 221 ... 2nd translucent main surface 223 ... 2nd transmissive side surface (translucent surface) 224 to 226 ... Second translucent side surface (dicing surface) 227 ... Main surface side cover portion 228 ... Light emitting side cover portion 229A to 229C ... Side surface side cover portion 300 ... Translucent member 301 ... Translucent main surface 302 ... Translucent back surface 303 ...
  • Second translucent side surface (translucent surface) 960 Translucent layer W1 ... First wire (wire) W2 ... 2nd wire (wire) W3 ... 3rd wire (wire) AS ... Assembly (semiconductor light emitting assembly) HA-HC ... Distance

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  • Condensed Matter Physics & Semiconductors (AREA)
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PCT/JP2021/039707 2020-11-13 2021-10-27 半導体発光装置 Ceased WO2022102411A1 (ja)

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CN202180075683.5A CN116458021A (zh) 2020-11-13 2021-10-27 半导体发光装置
DE112021005241.1T DE112021005241B4 (de) 2020-11-13 2021-10-27 Lichtemittierende halbleitervorrichtung
US18/252,291 US20230420909A1 (en) 2020-11-13 2021-10-27 Semiconductor light-emitting device
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DE112021005241B4 (de) 2024-05-08

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