WO2021238696A1 - 字线引出结构及其制备方法 - Google Patents

字线引出结构及其制备方法 Download PDF

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Publication number
WO2021238696A1
WO2021238696A1 PCT/CN2021/094069 CN2021094069W WO2021238696A1 WO 2021238696 A1 WO2021238696 A1 WO 2021238696A1 CN 2021094069 W CN2021094069 W CN 2021094069W WO 2021238696 A1 WO2021238696 A1 WO 2021238696A1
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WO
WIPO (PCT)
Prior art keywords
word line
contact hole
metal
axis direction
layer
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PCT/CN2021/094069
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English (en)
French (fr)
Inventor
刘志拯
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长鑫存储技术有限公司
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Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Priority to EP21812445.1A priority Critical patent/EP4002453A4/en
Priority to US17/400,456 priority patent/US11862281B2/en
Publication of WO2021238696A1 publication Critical patent/WO2021238696A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors

Definitions

  • the invention relates to the field of semiconductors, in particular to a method for preparing a word line lead structure and a bit word lead structure.
  • Semiconductor memory uses transistor arrays to control the charge and discharge of storage capacitors to achieve data access.
  • the gate of the transistor is electrically connected to the word line.
  • a word line extraction structure needs to be formed above the word line, and the word line is electrically connected to an external control circuit through the word line extraction structure.
  • the area of the word line extraction structure will also be correspondingly reduced, so that the gap between the word line extraction structure and the corresponding word line
  • the increase in contact resistance causes the current flowing through the word line to be too small, thereby reducing the induction margin of the semiconductor memory and the charging and discharging speed of the storage capacitor.
  • this application provides a word line lead structure, which includes:
  • Word line extending along the X axis
  • the contact hole covers the word line along the Y-axis direction, and the X-axis direction is perpendicular to the Y-axis direction;
  • the contact area between the contact hole and the metal line is larger than the contact area between the contact hole and the word line.
  • Another aspect of the present application provides a method for preparing a word line lead structure, including:
  • the metal layer and the contact hole layer are etched to form the aforementioned word line extraction structure.
  • FIG. 1 is a top view of the distribution of the word line lead structure according to an embodiment
  • Fig. 2 is a side sectional view corresponding to the section line AA' in Fig. 1 according to an embodiment
  • FIG. 3 is a flowchart of steps of a method for manufacturing a word line lead structure according to an embodiment
  • Figure 4a is a top view of an embodiment after forming a word line
  • Figure 4b is a side cross-sectional view of an embodiment corresponding to the section line AA' in Figure 4a;
  • Fig. 5a is a top view of an embodiment after a second trench is formed on a dielectric layer
  • Figure 5b is a side sectional view of an embodiment corresponding to the section line AA' in Figure 5a;
  • Fig. 6a is a top view of an embodiment after the polysilicon structure is removed
  • Figure 6b is a side sectional view of an embodiment corresponding to the section line AA' in Figure 6a;
  • FIG. 7a is a top view of an embodiment after a contact hole layer is filled in the first trench and the second trench;
  • Figure 7b is a side sectional view of an embodiment corresponding to the section line AA' in Figure 7a;
  • Figure 8a is a top view of an embodiment after forming a metal layer
  • Figure 8b is a side sectional view of an embodiment corresponding to the section line AA' in Figure 8a;
  • Figure 9a is a top view of an embodiment after forming 2*N masks
  • Figure 9b is a side sectional view of an embodiment corresponding to the section line AA' in Figure 9a;
  • Figure 10a is a top view of an embodiment after forming 2*N metal wires
  • Fig. 10b is a side sectional view corresponding to the section line AA' in Fig. 10a of an embodiment.
  • first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or portions, these elements, components, regions, layers, doping types and/or Parts should not be restricted by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be expressed as a second element, component, region, layer or portion.
  • Spatial relation terms such as “under”, “below”, “below”, “below”, “above”, “above”, etc., in This can be used to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatial relationship terms also include different orientations of devices in use and operation. For example, if the device in the drawings is turned over, elements or features described as “under” or “under” or “under” other elements will be oriented “on” the other elements or features. Therefore, the exemplary terms “below” and “below” can include both an orientation of above and below. In addition, the device may also include another orientation (for example, a 90-degree rotation or other orientation), and the space descriptors used herein are explained accordingly.
  • FIG. 1 is a top view of the word line drawing structure in an embodiment of this application
  • FIG. 2 is a side cross-sectional view corresponding to the AA' section line in FIG. 1.
  • the word line extraction structure includes a word line 120, a contact hole 310 and a metal line 410.
  • the word line 120 extends along the X-axis direction.
  • the contact hole 310 is located above the word line 120 and covers the word line 120 along the Y-axis direction, and the Y-axis direction and the X-axis direction are perpendicular to each other.
  • the contact hole 310 covers the word line 120 in the Y-axis direction, which means that the width of the contact hole 310 in the Y-axis direction is greater than or equal to the width of the word line 120 in the Y-axis direction, and a section of the word line 120 in the X-axis direction is contacted Hole 310 is covered.
  • the metal line 410 is located on the contact hole 310 and covers the contact hole 310, that is, the contact hole 310 is located between the word line 120 and the metal line 410, the bottom surface of the contact hole 310 is in contact with the word line 120, and the top surface of the contact hole 310 is in contact with the metal line 410 touch.
  • the contact area between the contact hole 310 and the metal line 410 is larger than the contact area between the contact hole 310 and the word line 120
  • the width of the contact surface of the contact hole 310 and the metal line 410 along the Y-axis direction is larger than the contact hole 310 and the word line 120. The width of the face along the Y axis.
  • the word line 120 is formed inside the semiconductor device.
  • a contact hole 310 and a metal line 410 above the word line 120, external electrical signals can be transmitted to the word line 120 through the metal line 410 and the contact hole 310.
  • the semiconductor device is controlled through the word line 120.
  • the contact hole 310 covers the word line 120 along the Y-axis direction
  • the metal line 410 covers the contact hole 310.
  • the contact area between the contact hole 310 and the metal line 410 is larger than the contact area between the contact hole 310 and the word line 120.
  • the contact area between the contact hole 310 and the word line 120 and the metal line 410 is formed inside the semiconductor device.
  • the contact area between the contact hole 310 and the word line 120 is small, which can reduce the impact of the contact hole 310 on the integration of the device.
  • the contact area between the contact hole 310 and the metal line 410 The larger contact area can reduce the contact resistance of the entire word line lead structure, thereby improving the sensing margin of the semiconductor memory and the charging and discharging speed of the storage capacitor.
  • the cross-section of the contact hole 310 is a T-shaped structure, that is, the cross-section of the contact hole 310 in the Z-axis direction shown in FIG. It is perpendicular to the Z axis in pairs.
  • the contact hole 310 has a T-shaped structure, and the width of the top surface of the contact hole 310 in the Y-axis direction is greater than the width of the bottom surface in the Y-axis direction, so that the contact area between the contact hole 310 and the metal wire 410 is larger than that of the contact hole 310 The contact area with the word line 120.
  • the substrate 100 is provided with a first trench 101 extending along the X-axis direction, the word line 120 is filled in the first trench 101, and the thickness of the word line 120 is smaller than the depth of the first trench 101, that is, the word
  • the top surface of the line 120 is lower than the top surface of the substrate 100.
  • a part of the contact hole 310 is filled in the first trench 101, and the contact hole 310 located outside the first trench 101 extends along the Y-axis direction to the substrate 100 on both sides of the word line 120. At this time, it is located in the first trench 101.
  • the contact hole 310 in the groove 101 and the contact hole 310 located outside the first groove 101 together form a contact hole 310 having a T-shaped structure.
  • the width of the metal wire 410 above the contact hole 310 in the Y-axis direction is equal to the width of the contact hole 310 in the Y-axis direction, and the side surfaces of the contact hole 310 and the metal wire 410 extending in the X-axis direction are aligned with each other.
  • the word line 120 includes a metal structure 121 at the bottom of the first trench 101 and a polysilicon structure at the top of the metal structure 121.
  • the polysilicon structure of the word line in the area covered by the contact hole 310 is removed, that is, in the contact hole
  • the word line in the coverage area of 310 does not include a polysilicon structure, and the contact hole 310 directly contacts the metal structure 121, thereby reducing the parasitic resistance between the word lines.
  • the word line extraction structure includes 2*N word lines 120, each word line 120 is arranged side by side along the Y-axis direction, and 2*N word lines 120 are respectively formed with 2 *N contact holes 310, 2*N metal lines 410 are respectively formed on the 2*N contact holes 310, and each metal line 410 extends along the X-axis direction; where N is a positive integer, and 2*N word lines 120, The 2*N contact holes 310 and the 2*N metal wires 410 are in one-to-one correspondence.
  • 2*N word lines 120 arranged in parallel along the Y axis are formed on the substrate 100, and each word line 120 is formed with a corresponding contact hole 310 and a metal line 410, that is, each word line 120
  • the word line 120 corresponds to an independent word line lead structure, so that each word line 120 can be independently controlled.
  • the 2*N word lines 120 are aligned in the Y-axis direction, that is, the 2*N word lines 120 have the same length along the X-axis direction, and the end points of each word line 120 are aligned along the Y-axis direction.
  • N metal lines 410 and N contact holes 310 are located on one side of the word line 120 along the X-axis direction, and another N metal lines 410 and another N contact holes 310 are located on the word line.
  • 2*N lead structures formed by 2*N contact holes 310 and 2*N metal wires 410 are divided into two sets of lead structures.
  • the first set of lead structures includes N contact holes 310 and The N metal lines 410 contacted by the N contact holes 310
  • the second set of lead-out structures includes another N contact holes 310 and another N metal lines 410 that are in contact with the N contact holes 310, wherein the first set of lead-out structures Close to one end of the word line 120, the second set of lead structures is close to the other end of the word line 120.
  • the contact hole 310 and the metal line 410 located on one side of the word line 120 cover the odd-numbered word line 120
  • the contact hole 310 and the metal line 410 located on the other side of the word line 120 cover the even-numbered word line 120.
  • the 2*N word lines 120 are arranged in sequence along the Y axis
  • the first set of lead structures are arranged on the odd-numbered word line 120
  • the second set of lead structures are arranged on the even-numbered word line 120 Therefore, the distance between adjacent contact holes 310 can be increased, and then the width of the contact holes 310 and the metal line 410 can be increased, the contact area can be increased, and the contact resistance can be reduced.
  • the contact hole 310 and the metal wire 410 have different conductivity, that is, the material of the metal wire 410 of the contact hole 310 is different.
  • the material of the contact hole 310 may be a metal or metal alloy containing one or more of copper, aluminum, nickel, tungsten, silver, gold, etc.
  • the metal wire 410 may be a copper wire, an aluminum wire, a nickel wire, One of tungsten wire, silver wire, gold wire, etc.
  • FIG. 3 shows a method for manufacturing the word line lead structure in an embodiment of the application.
  • the preparation method of the word line lead structure includes:
  • Step S100 opening a first trench extending along the X-axis direction on the substrate.
  • Step S200 forming a word line extending in the X-axis direction in the first trench, and the top surface of the word line is lower than the top surface of the substrate.
  • FIG. 4a is a top view after the word line 120 is formed, and FIG. 4b corresponds to a side cross-sectional view of the AA' section line in FIG. 4a.
  • a first trench 101 extending in the X-axis direction is formed in the substrate 100, and a word line 120 extending in the X-axis direction is formed in the first trench 101.
  • the top surface of the word line 120 is lower than the substrate 100.
  • the thickness of the top surface of the word line 120 is smaller than the depth of the first trench 101.
  • the word line 120 includes a metal structure 121 located at the bottom of the first trench 101 and a polysilicon structure 122 located on the metal structure 121.
  • the substrate 100 is provided with 2*N first trenches 101 extending along the X-axis direction, and each trench is arranged side by side along the Y-axis direction.
  • the N first trenches 101 form 2*N word lines 120 extending along the X-axis direction, and each word line 120 is arranged side by side along the Y-axis direction.
  • the above-mentioned word lines 120 are aligned in the Y-axis direction, that is, 2*N word lines 120 have the same length along the X-axis direction, and the end points of each word line 120 are aligned in the Y-axis direction.
  • the process of forming the word line 120 includes:
  • Step S210 deposit a layer of word line material on the substrate inside the first trench and outside the first trench.
  • a layer of word line material is covered by a deposition process.
  • the word line material layer has a certain thickness and covers the first trench 101 and the substrate 100.
  • Step S220 Perform a planarization process on the top surface of the word line material layer and remove the word line material layer on the substrate, leaving the word line material layer in the first trench.
  • the word line material layer After the word line material layer is deposited, the word line material layer has an uneven upper surface. Then, through a chemical mechanical polishing process, the upper surface of the word line material layer is polished, so that the upper surface of the word line material layer is flattened and carved. The word line material layer is etched to expose the substrate 100, and the word line material layer in the first trench 101 is retained.
  • Step S230 etch back the word line material layer in the first trench, remove part of the word line material layer at the top of the first trench, and retain a part of the word line material layer at the bottom of the first trench to form the word line.
  • the word line material layer in the first trench 101 is etched through an etching process to reduce the thickness of the word line material layer so that the thickness of the word line material layer is smaller than the depth of the first trench 101. After stopping the etching , The remaining word line material layer forms the word line 120. Among them, the depth of the engraving of the word line material layer can be flexibly selected according to specific needs.
  • Step S300 forming a contact hole layer on the word line and the substrate outside the first trench.
  • the contact hole layer 300 may be directly formed on the word line 120 and the substrate 100 outside the first trench 101.
  • step S300 may also include the following sub-steps:
  • the dielectric layer 200 is deposited on the substrate 100 and the first trench 101, and the top surface of the dielectric layer 200 is polished to planarize the top surface of the dielectric layer 200.
  • Step S312 etching the dielectric layer to form a second trench extending along the Y-axis direction, the second trench penetrating the dielectric layer and exposing the word line and the substrate.
  • Fig. 5a is a top view after the second trench 201 is formed on the dielectric layer 200
  • Fig. 5b corresponds to the side cross-sectional view of the section line AA' in Fig. 5a.
  • the dielectric layer 200 is etched to form a second trench 201 extending along the Y-axis direction on the dielectric layer 200.
  • the second trench 201 penetrates the dielectric layer 200 along the Z-axis direction and exposes the word line at the bottom of the second trench 201 120 (specifically, the polysilicon structure 122 in the word line 120 is exposed) and the substrate 100.
  • the etching selection ratios of the dielectric layer 200 and the substrate 100 are different. Therefore, during the etching of the dielectric layer 200 to form the second trench 201, the substrate 100 is basically not etched.
  • two second trenches 201 extending in the Y-axis direction are opened on the dielectric layer 200, and one of the second trenches 201 is located on the word line 120 and extends in the X-axis direction.
  • One of the second trenches 201 is located on the other side of the word line 120 extending along the X-axis direction, that is, the two second trenches 201 are arranged side by side along the X-axis direction.
  • the two second trenches 201 are respectively close to the two end points of the word line 120 along the X-axis direction.
  • FIG. 6a is a top view after removing the exposed polysilicon structure
  • FIG. 6b corresponds to the side cross-sectional view of the AA' section line in FIG.
  • Step S313 forming a contact hole layer in the first trench and the second trench.
  • Figure 7a is a top view of the first trench 101 and the second trench 201 after the contact hole layer 300 is filled
  • Figure 7b corresponds to the side sectional view of the AA' section line in Figure 7a .
  • a thicker layer of contact hole material is deposited by a deposition process, the contact hole material fills the exposed first trench 101 and second trench 201 and is higher than the dielectric layer 200, and then the contact hole material is planarized by a grinding process After processing, the contact hole material above the dielectric layer 200 is removed, and only the contact hole material in the first trench 101 and the second trench 201 is retained, thereby forming the desired contact hole layer 300.
  • the required contact hole layer 300 can also be formed through the following substeps S321 to S323:
  • Step S321 deposit a contact hole material on the substrate 100 and the first trench 101.
  • Step S322 etching the contact hole material to remove the contact hole material on both sides to form a contact hole layer 300 extending along the Y-axis direction.
  • Step S323 Depositing a dielectric material and performing a planarization process on the dielectric material, removing the dielectric material layer above the contact hole layer 300 and exposing the contact hole layer 300, leaving the dielectric material on both sides of the contact hole layer 300 , Form a dielectric layer 200.
  • Step S400 forming a metal layer on the contact hole layer.
  • Fig. 8a is a top view after forming the metal layer 400
  • Fig. 8b corresponds to the side cross-sectional view of the section line AA' in Fig. 8a.
  • a metal layer 400 is formed on the contact hole layer 300.
  • the contact hole layer 300 is formed in the second trench 201
  • the metal layer 400 is formed on the contact hole layer 300 and the dielectric layer 200.
  • Step S500 etching the metal layer and the contact hole layer to form the word line extraction structure described above.
  • the metal layer 400 is formed on the contact hole layer 300, the metal layer 400 and the contact hole layer 300 are etched, the metal layer 400 is etched to form a metal line 410, and the contact hole layer 300 is etched to form a contact hole 310, thereby forming the aforementioned
  • the word line extraction structure wherein the positional relationship of the word line 120, the contact hole 310 and the metal line 410 in the word line extraction structure has been introduced above, and will not be repeated here.
  • etching the metal layer 400 and the contact hole layer 300 specifically includes: forming a mask on the metal layer 400, and under the protection of the mask, etching down the exposed metal layer 400, The metal line 410 is formed, and under the protection of the metal line 410, the exposed contact hole layer 300 is continuously etched downward to form the contact hole 310. That is to say, the above-mentioned etching of the contact hole layer 300 belongs to self-aligned etching. The boundary between the contact hole 310 and the metal line 410 formed after the self-aligned etching is aligned to prevent the alignment of the two from shifting and affecting the device electrical Sexual performance.
  • step S500 includes:
  • Fig. 9a is a top view after forming 2*N masks 500
  • Fig. 8b corresponds to a side sectional view of the AA' section line in Fig. 8a.
  • 2*N masks 500 are formed on the metal layer 400, and each mask 500 crosses the second trench 201 along the X-axis direction, and one mask 500 covers a word line 120 along the Y-axis direction, that is, 2*N masks.
  • the film 500 corresponds to 2*N word lines 120 one-to-one.
  • N masks 500 are located on one side of the metal layer 400 along the X-axis direction and respectively cross the second trenches 201 located on the same side along the X-axis direction, and respectively cover the odd-numbered word lines 120, and N
  • the two masks 500 are located on the other side of the metal layer 400 along the X-axis direction and respectively cross the other second trenches 201 located on the same side along the X-axis direction, and respectively cover the even-numbered word lines 120.
  • the masks 500 located on the same side are arranged side by side along the Y-axis direction.
  • Step S520 sequentially etch the metal layer and the contact hole layer, reserve the metal layer under the mask to form 2*N metal lines, and reserve the contact hole layer under the metal lines to form 2*N metal lines.
  • 2*N contact holes are formed, where N is a positive integer, 2*N word lines, 2*N contact holes, and 2*N metal lines are in one-to-one correspondence.
  • Fig. 10a is a top view after 2*N metal wires 410 are formed, and Fig. 10b corresponds to a side sectional view of the AA' section line in Fig. 10a.
  • the exposed metal layer 400 is etched to form 2*N independent metal lines 410.
  • the exposed contact hole layer 300 is continuously etched. Etching to form 2*N independent contact holes 310.
  • 2*N word lines 120, 2*N contact holes 310, and 2*N metal lines 410 are in one-to-one correspondence.
  • a word line 120 is led out through the contact hole 310 and the metal line 410 above it.
  • a contact hole layer 300 extending along the Y-axis direction is formed first, the contact hole layer 300 is integrally formed and electrically connected to a plurality of word lines 120, and then a metal layer is formed on the contact hole layer 300 and the dielectric layer 200 400, and a mask 600 is formed on the metal layer 400.
  • the mask 600 crosses the second trench 201 along the X-axis direction. Then, under the shielding effect of the mask 600, the exposed metal layer 400 and the contact hole layer 300 By etching, the contact hole layer 300 extending along the Y-axis direction is cut into multiple independent parts, and the unetched metal layer 400 and the contact hole layer 300 form the lead structure of the word line 120.
  • the alignment steps of the front and back etching in the conventional technique are omitted, and in this application, the boundary between the metal layer 400 and the contact hole layer 300 remaining after the etching is flush. There is no positional deviation between the metal layer 400 and the contact hole layer 300, which greatly improves the electrical performance of the semiconductor device.
  • the word line extraction structure described above is formed by the above-mentioned word line extraction structure preparation method, wherein the contact hole 310 covers the word line 120 along the Y-axis direction, and the metal line 410 covers the contact hole 310.
  • the contact hole 310 and the metal line 410 The contact area is larger than the contact area of the contact hole 310 and the word line 120.
  • the contact area of the contact hole 310 and the word line 120 is smaller, which can reduce the influence of the contact hole 310 on the integration of the device, and
  • the contact area between the contact hole 310 and the metal line 410 is relatively large, which can reduce the contact resistance of the entire word line lead structure, thereby improving the sensing margin of the semiconductor memory and the charging and discharging speed of the storage capacitor.

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Abstract

本申请涉及一种字线引出结构及其制备方法，在衬底上形成沿X轴方向延伸的字线；形成沿Y轴方向覆盖字线的接触孔，X轴方向和Y轴方向垂直；形成覆盖接触孔的金属线，接触孔位于字线和金属线之间并分别与字线和金属线接触；其中，接触孔与金属线的接触面积大于接触孔与字线的接触面积。

Description

字线引出结构及其制备方法
本申请要求于2020年5月28日提交的申请号为202010468064.X、名称为“字线引出结构及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及半导体领域，尤其涉及一种字线引出结构和位字引出结构的制备方法。
背景技术
半导体存储器是利用晶体管阵列控制存储电容的充放电而实现数据的存取。其中，晶体管的栅极与字线电连接，在衬底内形成字线后，需要在字线上方形成字线引出结构，通过字线引出结构实现字线与外部控制电路的电连接。
然而，随着半导体器件集成度的不断提高，字线尺寸以及字线之间的间距的不断缩小，字线引出结构的面积也会相应减小，使得字线引出结构与相应字线之间的接触电阻变大，导致流经字线的电流过小，从而降低了半导体存储器的感应裕度和存储电容的充放电速度。
发明内容
本申请一方面提供一种字线引出结构，包括：
字线，沿X轴方向延伸；
接触孔，沿Y轴方向覆盖所述字线，所述X轴方向和所述Y轴方向垂直；
金属线，覆盖所述接触孔，所述接触孔位于所述字线和所述金属线之间并分别与所述字线和所述金属线接触；
其中，所述接触孔与所述金属线的接触面积大于所述接触孔与所述字线的接触面积。
本申请的另一方面提供一种字线引出结构的制备方法，包括：
在衬底内开设第一沟槽；
在所述第一沟槽内形成沿X轴方向延伸的字线，所述字线线的顶面低于所述衬底的顶面；
在所述字线和所述衬底上形成接触孔层；
在所述接触孔层上形成金属层；
刻蚀所述金属层和所述接触孔层，形成上述的字线引出结构。
本发明的一个或多个实施例的细节在下面的附图和描述中提出。本发明的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例中的技术方案，可参考一幅或多幅附图，但用于描述附图的附加细节或示例不应当被认为是对本申请的发明创造、目前所描述的实施例或优选方式中任何一者的范围的限制。
图1为一实施例的字线引出结构的分布俯视图；
图2为一实施例的对应图1中AA’剖面线的侧剖图；
图3为一实施例的字线引出结构的制备方法的步骤流程图；
图4a为一实施例的形成字线后的俯视图；
图4b为一实施例的对应图4a中AA’剖面线的侧剖图；
图5a为一实施例的在介质层上开设第二沟槽后的俯视图；
图5b为一实施例的对应图5a中AA’剖面线的侧剖图；
图6a为一实施例的在去除多晶硅结构后的俯视图；
图6b为一实施例的对应图6a中AA’剖面线的侧剖图；
图7a为一实施例的在第一沟槽和第二沟槽内填充接触孔层后的俯视图；
图7b为一实施例的对应图7a中AA’剖面线的侧剖图；
图8a为一实施例的形成金属层后的俯视图；
图8b为一实施例的对应图8a中AA’剖面线的侧剖图；
图9a为一实施例的形成2*N个掩膜后的俯视图；
图9b为一实施例的对应图9a中AA’剖面线的侧剖图；
图10a为一实施例的形成2*N条金属线后的俯视图；
图10b为一实施例的对应图10a中AA’剖面线的侧剖图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使本申请的公开内容更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。
应当明白，当元件或层被称为“在...上”时，其可以直接地在其它元件或层上或者可以存在居间的元件或层。应当明白，尽管可使用术语第一、第二、第三等描述各种元件、部件、区、层、掺杂类型和/或部分，这些元件、部件、区、层、掺杂类型和/或部分不应当被这些术语限制。这些术语仅仅用来区分一个元件、部件、区、层、掺杂类型或部分与另一个元件、部件、区、层、掺杂类型或部分。因此，在不脱离本发明教导之下，下面讨论的第一元件、部件、区、层、掺杂类型或部分可表示为第二元件、部件、区、层或部分。
空间关系术语例如“在...下”、“在...下面”、“下面的”、“在...之下”、“在...之上”、“上面的”等，在这里可以用于描述图中所示的一个元件或特征与其它元件或特征的关系。应当明白，除了图中所示的取向以外，空间关系术语还包括使用和操作中的器件的不同取向。例如，如果附图中的器件翻转，描述为“在其它元件下面”或“在其之下”或“在其下”元件或特征将取向为在其它元件或特征“上”。因此，示例性术语“在...下面”和“在...下”可包括上和下两个取向。此外，器件也可以包括另外地取向(譬如，旋转90度或其它取向)，并且在此使用的空间描述语相应地被解释。
在此使用时，单数形式的“一”、“一个”和“所述/该”也可以包括复数形式，除非上下文清楚指出另外的方式。还应当理解的是，术语“包括/包含”或“具有”等指定所陈述的特征、整体、步骤、操作、组件、部分或它们的组合的存在，但是不排除存在或添加一个或更多个其他特征、整体、步骤、操作、组件、部分或它们的组合的可能性。同时，在本说明书中，术语“和/或”包括相关所列项目的任何及 所有组合。
图1为本申请中一实施例中字线引出结构的俯视图，图2为对应图1中AA’剖面线的侧剖图。
结合图1和图2所示，字线引出结构包括字线120、接触孔310和金属线410。
其中，字线120沿X轴方向延伸。
接触孔310位于字线120上方并沿Y轴方向覆盖字线120，Y轴方向与X轴方向相互垂直。接触孔310沿Y轴方向覆盖字线120，指的是接触孔310沿Y轴方向的宽度大于或等于字线120沿Y轴方向的宽度，在沿X轴方向上的一段字线120被接触孔310覆盖。
金属线410位于接触孔310上并覆盖接触孔310，即接触孔310位于字线120与金属线410之间，接触孔310的底面与字线120接触，接触孔310的顶面与金属线410接触。其中，接触孔310与金属线410的接触面积大于接触孔310与字线120的接触面积，接触孔310与金属线410的接触面沿Y轴方向的宽度大于接触孔310与字线120的接触面沿Y轴方向的宽度。
上述字线引出结构，字线120形成于半导体器件的内部，通过在字线120上方形成接触孔310和金属线410，可以通过金属线410和接触孔310将外部电信号传输至字线120，并通过字线120对半导体器件进行控制。在本申请中，接触孔310沿Y轴方向覆盖字线120，而金属线410覆盖接触孔310，接触孔310与金属线410的接触面积大于接触孔310与字线120的接触面积，通过调整接触孔310与字线120和金属线410的接触面积，接触孔310和字线120的接触面积较小，可以减小接触孔310对器件集成度的影响，而接触孔310与金属线410的接触面积较大，可以减小整个字线引出结构的接触电阻，从而提高半导体存储器的感应裕度和存储电容的充放电速度。
在一实施例中，如图2所示，接触孔310的横截面为T型结构，即接触孔310在图2所示的Z轴方向的截面为T型结构，其中，X轴、Y轴和Z轴两两垂直。在本实施例中，接触孔310呈T型结构，接触孔310顶面沿Y轴方向的宽度大于底面沿Y轴方向的宽度，从而实现接触孔310与金属线410的接触面积大于接触孔310与字线120的接触面积。
更具体的，衬底100开设有沿X轴方向延伸的第一沟槽101，字线120填充于 第一沟槽101内，且字线120的厚度小于第一沟槽101的深度，即字线120的顶面低于衬底100的顶面。接触孔310的一部分填充于第一沟槽101内，且位于第一沟槽101外的接触孔310沿Y轴方向延伸至字线120两侧的衬底100上，此时，位于第一沟槽101内的接触孔310和位于第一沟槽101外的接触孔310共同形成具有T型结构的接触孔310。进一步的，接触孔310上方的金属线410沿Y轴方向的宽度等于接触孔310沿Y轴方向的宽度，且接触孔310和金属线410沿X轴方向延伸的侧面相互对齐。在一实施例中，字线120包括位于第一沟槽101底部的金属结构121和位于金属结构121顶部的多晶硅结构，在接触孔310覆盖区域的字线的多晶硅结构被去除，即在接触孔310的覆盖区域的字线不包括多晶硅结构，接触孔310直接与金属结构121接触，由此降低字线之间的寄生电阻。
在一实施例中，结合图1和图2所示，字线引出结构包括2*N条字线120，各字线120沿Y轴方向并列分布，2*N条字线120上分别形成2*N个接触孔310，2*N个接触孔310上分别形成2*N条金属线410，各金属线410沿X轴方向延伸；其中，N为正整数，2*N条字线120、2*N个接触孔310、2*N条金属线410均一一对应。在本实施例中，衬底100上形成有2*N沿Y轴方向并列分布的字线120，每条字线120上方均形成有与之对应的接触孔310和金属线410，即每条字线120对应一个独立的字线引出结构，从而可以分别对各条字线120独立控制。更进一步的，2*N条字线120在Y轴方向上对齐排列，即2*N条字线120沿X轴方向的长度相同，各字线120的端点沿Y轴方向对齐。
更具体的，如图1所示，N条金属线410和N个接触孔310位于字线120的沿X轴方向的一侧，另外N条金属线410和另外N个接触孔310位于字线120的沿X轴方向的另一侧；其中，位于同一侧的金属线410沿Y轴方向并列分布。在本实施例中，2*N个接触孔310和2*N条金属线410形成的2*N个引出结构共分为两组引出结构，第一组引出结构包括N个接触孔310和与该N个接触孔310接触的N条金属线410，第二组引出结构包括另外N个接触孔310和与该N个接触孔310接触的另外N条金属线410，其中，第一组引出结构靠近字线120一端端点，第二组引出结构靠近字线120另一端端点，通过将金属线410和接触孔310分散设置于字线120两侧，可以适当提高金属线410或接触孔310的宽度，从而减小字线引出结构的接触电阻。
更进一步的，位于字线120的其中一侧的接触孔310和金属线410覆盖第奇数条字线120，位于字线120的另一侧的接触孔310和金属线410覆盖第偶数条字线120。在本实施例中，2*N条字线120沿Y轴方向依次排布，第一组引出结构设于第奇数条字线120上，第二组引出结构设于第偶数条字线120上，由此可以增大相邻接触孔310之间的间距，继而可以增大接触孔310和金属线410的宽度，提高接触面积，减小接触电阻。
在一实施例中，接触孔310和金属线410具有不同的导电率，即接触孔310的金属线410的材料不同。具体的，接触孔310的材料可以为包含铜、铝、镍、钨、银、金等中的一种或多种的金属或金属合金，金属线410可以为铜线、铝线、镍线、钨线、银线、金线等中的一种。
如图3所示为本申请一实施例中的字线引出结构的制备方法。
在一实施例中，字线引出结构的制备方法包括：
步骤S100：在衬底上开设沿X轴方向延伸的第一沟槽。
步骤S200：在所述第一沟槽内形成沿X轴方向延伸的字线，所述字线的顶面低于所述衬底的顶面。
结合图4a和图4b，其中，图4a为形成字线120后的俯视图，图4b对应图4a中AA’剖面线的侧剖图。
具体的，在衬底100内开设沿X轴方向延伸的第一沟槽101，在第一沟槽101内形成沿X轴方向延伸的字线120，字线120的顶面低于衬底100的顶面，即字线120的厚度小于第一沟槽101的深度。进一步的，字线120包括位于第一沟槽101底部的金属结构121和位于金属结构121上的多晶硅结构122。
在一具体的实施例中，如图4a所示，衬底100上开设有2*N个分别沿X轴方向延伸的第一沟槽101，各沟槽沿Y轴方向并列分布，在2*N个第一沟槽101形成2*N条沿X轴方向延伸的字线120，各字线120沿Y轴方向并列分布。进一步的，上述各字线120在Y轴方向上对齐排列，即2*N条字线120沿X轴方向的长度相同，各字线120的端点沿Y轴方向对齐。
在一具体的实施例中，形成字线120的过程包括：
步骤S210：在所述第一沟槽内和所述第一沟槽外的衬底上沉积字线材料层。
具体的，通过沉积工艺覆盖一层字线材料层，字线材料层具有一定的厚度并覆 盖第一沟槽101以及衬底100。
步骤S220：对所述字线材料层的顶面进行平坦化处理并去除衬底上的字线材料层，保留第一沟槽内的字线材料层。
在沉积字线材料层后，字线材料层具有凹凸不平的上表面，接着，通过化学机械研磨工艺，对字线材料层的上表面进行研磨，使字线材料层的上表面平坦化，刻蚀字线材料层以暴露出衬底100，保留第一沟槽101内的字线材料层。
步骤S230：回刻所述第一沟槽内的字线材料层，去除第一沟槽顶部的部分字线材料层，保留第一沟槽底部的部分字线材料层，形成所述字线。
具体的，具体通过刻蚀工艺刻蚀第一沟槽101内的字线材料层，削减字线材料层的厚度，使字线材料层的厚度小于第一沟槽101的深度，停止刻蚀后，所保留的字线材料层形成字线120。其中，对字线材料层的回刻深度可以根据具体需要灵活选择。
在形成上述字线120之后，继续执行：
步骤S300：在所述字线上和所述第一沟槽外的衬底上形成接触孔层。
在一实施例中，可以在字线120上和第一沟槽101外的衬底100上直接形成接触孔层300。
在另一实施例中，步骤S300也可以包括以下子步骤：
步骤S311：在所述衬底和所述第一沟槽上形成介质层。
通过沉积工艺，在衬底100和第一沟槽101上沉积介质层200，并对介质层200的顶面进行研磨，使介质层200的顶面平坦化。
步骤S312：刻蚀所述介质层，形成沿Y轴方向延伸的第二沟槽，所述第二沟槽穿透所述介质层并暴露出所述字线和所述衬底。
如图5a和图5b所示，其中，图5a为在介质层200上开设第二沟槽201后的俯视图，图5b对应图5a中AA’剖面线的侧剖图。刻蚀介质层200，在介质层200上形成沿Y轴方向延伸的第二沟槽201，第二沟槽201沿Z轴方向穿透介质层200并暴露出第二沟槽201底部的字线120(具体是暴露字线120中的多晶硅结构122)和衬底100。需要说明的是，在该实施例中，介质层200和衬底100的刻蚀选择比不同，因此，在刻蚀介质层200形成第二沟槽201期间，基本不会刻蚀衬底100。
在一实施例中，如图5a所示，在介质层200上开设有两个分别沿Y轴方向延 伸的第二沟槽201，其中一个第二沟槽201位于字线120沿X轴方向延伸的一侧，其中另一个第二沟槽201位于字线120沿X轴方向延伸的另一侧，即两个第二沟槽201沿X轴方向并列分布。更进一步的，两个第二沟槽201分别靠近字线120沿X轴方向的两侧端点。
在一具体的实施例中，如图6a和图6b所示，其中，图6a为去除暴露的多晶硅结构后的俯视图，图6b对应图6a中AA’剖面线的侧剖图，通过第二沟槽201暴露出字线的多晶硅结构122时，继续执行：去除所暴露的多晶硅结构122，保留金属结构121。
步骤S313：在所述第一沟槽和第二沟槽内形成接触孔层。
如图7a和图7b所示，其中，图7a为在第一沟槽101和第二沟槽201内填充接触孔层300后的俯视图，图7b对应图7a中AA’剖面线的侧剖图。通过沉积工艺沉积一层较厚的接触孔材料，接触孔材料填充所暴露的第一沟槽101和第二沟槽201内并高于介质层200，再通过研磨工艺对接触孔材料进行平坦化处理，去除介质层200上方的接触孔材料，仅保留第一沟槽101和第二沟槽201内的接触孔材料，由此形成所需的接触孔层300。
上述实施例通过步骤S311～步骤S313形成接触孔层300，在其他的实施例中，还可以通过以下子步骤S321～步骤S323形成所需的接触孔层300：
步骤S321：在所述衬底100和所述第一沟槽101上沉积接触孔材料。
步骤S322：刻蚀所述接触孔材料，去除两侧的接触孔材料，形成沿Y轴方向延伸的接触孔层300。
步骤S323：沉积介质材料，并对介质材料进行平坦化处理，去除所述接触孔层300上方的介质材料层并暴露出所述接触孔层300，保留所述接触孔层300两侧的介质材料，形成介质层200。
通过上述步骤，形成接触孔层300后，继续执行：
步骤S400：在所述接触孔层上形成金属层。
如图8a和8b所示，其中，图8a为形成金属层400后的俯视图，图8b对应图8a中AA’剖面线的侧剖图。通过沉积工艺，在接触孔层300上形成金属层400。在一实施例中，接触孔层300形成于第二沟槽201内，金属层400形成于接触孔层300和介质层200上。
步骤S500：刻蚀所述金属层和所述接触孔层，形成上述字线引出结构。
在接触孔层300上形成金属层400之后，对金属层400和接触孔层300进行刻蚀，刻蚀金属层400形成金属线410，刻蚀接触孔层300形成接触孔310，由此形成上述字线引出结构，其中，字线引出结构中的字线120、接触孔310和金属线410的位置关系已在上文介绍，在此不再赘述。
在一实施例中，刻蚀所述金属层400和所述接触孔层300，具体包括：在金属层400上形成掩膜，在掩膜的保护下，向下刻蚀暴露的金属层400，形成金属线410，并在金属线410的保护下，继续向下刻蚀暴露的接触孔层300，形成接触孔310。即上述对接触孔层300的刻蚀属于自对准刻蚀，经自对准刻蚀后所形成的接触孔310和金属线410的边界对齐，避免两者对位出现偏移而影响器件电性性能。
在一具体的实施例中，衬底100上形成有2*N条字线120，接触孔层300形成于第二沟槽201内并沿Y轴方向延伸，此时，步骤S500包括：
步骤S510：在所述金属层上形成2*N个掩膜，各所述掩膜沿X轴方向跨过所述第二沟槽201且一个掩膜沿Y轴方向覆盖一条字线。
如图9a和图9b所示，其中，图9a为形成2*N个掩膜500后的俯视图，图8b对应图8a中AA’剖面线的侧剖图。在金属层400上形成2*N个掩膜500，各掩膜500沿X轴方向跨过第二沟槽201且一个掩膜500沿Y轴方向覆盖一条字线120，即2*N个掩膜500与2*N条字线120一一对应。进一步的，介质层200内开设有两个第二沟槽201，在两个第二沟槽201内分别对应形成两个沿Y轴方向延伸的接触孔层300时，上述2*N个掩膜500中，其中N个掩膜500位于金属层400沿X轴方向的一侧并分别沿X轴方向跨过位于同侧的第二沟槽201，且分别覆盖第奇数条字线120，另外N个掩膜500位于金属层400沿X轴方向的另一侧并分别沿X轴方向跨过位于同侧的另一第二沟槽201，且分别覆盖第偶数条字线120。进一步的，位于同一侧的掩膜500沿Y轴方向并列分布。
步骤S520：依次刻蚀所述金属层和所述接触孔层，保留所述掩膜下方的所述金属层以形成2*N个金属线、保留所述金属线下方的所述接触孔层以形成2*N个接触孔，其中，N为正整数，2*N条所述字线、2*N个所述接触孔、2*N条所述金属线均一一对应。
如图10a和图10b所示，其中，图10a为形成2*N条金属线410后的俯视图， 图10b对应图10a中AA’剖面线的侧剖图。在2*N个掩膜的保护下，对暴露的金属层400进行刻蚀，形成2*N条独立的金属线410，在金属线410的保护下，继续对暴露的接触孔层300进行刻蚀，形成2*N个独立接触孔310，此时，2*N条所述字线120、2*N个所述接触孔310、2*N条所述金属线410均一一对应，每一条字线120通过其上方的接触孔310和金属线410引出。
在本实施例中，先形成沿Y轴方向延伸的接触孔层300，接触孔层300一体成型且与多个字线120电连接，接着在接触孔层300上和介质层200上形成金属层400，并在金属层400上形成掩膜600，掩膜600沿X轴方向跨过第二沟槽201，然后在掩膜600的遮挡作用下依次对暴露的金属层400和接触孔层300进行刻蚀，将沿Y轴方向延伸的接触孔层300切割成多个独立的部分，未被刻蚀的金属层400和接触孔层300便形成字线120的引出结构。由于上述对于接触孔层300采用自对准刻蚀，省略了传统技术中前后刻蚀的对准步骤，且本申请中，刻蚀后所保留的金属层400和接触孔层300的边界齐平，金属层400和接触孔层300不存在位置偏移，大大改善了半导体器件的电性性能。
通过上述字线引出结构制备方法，形成上文介绍的字线引出结构，其中，接触孔310沿Y轴方向覆盖字线120，而金属线410覆盖接触孔310，接触孔310与金属线410的接触面积大于接触孔310与字线120的接触面积。上述字线引出结构，通过调整接触孔310与字线120和金属线410的接触面积，接触孔310和字线120的接触面积较小，可以减小接触孔310对器件集成度的影响，而接触孔310与金属线410的接触面积较大，可以减小整个字线引出结构的接触电阻，从而提高半导体存储器的感应裕度和存储电容的充放电速度。
以上实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种字线引出结构，包括：
    字线，沿X轴方向延伸；
    接触孔，沿Y轴方向覆盖所述字线，所述X轴方向和所述Y轴方向垂直；
    金属线，覆盖所述接触孔，所述接触孔位于所述字线和所述金属线之间并分别与所述字线和所述金属线接触；
    其中，所述接触孔与所述金属线的接触面积大于所述接触孔与所述字线的接触面积。
  2. 根据权利要求1所述的字线引出结构，其中，所述接触孔的横截面为T型结构。
  3. 根据权利要求2所述的字线引出结构，其中，所述字线引出结构包括2*N条所述字线、2*N个所述接触孔和2*N条所述金属线，各所述字线沿所述X轴方向并列分布，各所述金属线沿所述Y轴方向延伸；其中，N为正整数，2*N条所述字线、2*N个所述接触孔、2*N条所述金属线均一一对应。
  4. 根据权利要求3所述的字线引出结构，其中，各所述字线在Y轴方向上对齐排列。
  5. 根据权利要求3所述的字线引出结构，其中，N条所述金属线和N个所述接触孔位于所述字线的沿所述X轴方向的一侧，另外N条所述金属线和另外N个接触孔位于所述字线的沿所述X轴方向的另一侧；其中，位于同一侧的金属线沿所述Y轴方向并列分布。
  6. 根据权利要求5所述的字线引出结构，其中，位于所述字线的其中一侧的所述接触孔覆盖第奇数条所述字线，位于所述字线的另一侧的所述接触孔覆盖第偶数条所述字线。
  7. 根据权利要求1所述的字线引出结构，其中，所述字线与所述金属线具有不同的导电率。
  8. 一种字线引出结构的制备方法，包括：
    在衬底内开设第一沟槽；
    在所述第一沟槽内形成沿X轴方向延伸的字线，所述字线线的顶面低于所述 衬底的顶面；
    在所述字线和所述衬底上形成接触孔层；
    在所述接触孔层上形成金属层；
    刻蚀所述金属层和所述接触孔层，形成权利要求1至7任一项所述的字线引出结构。
  9. 根据权利要求8所述的制备方法，其中，所述衬底内形成有2*N条条所述字线，各所述字线沿Y轴方向并列分布；
    所述在所述字线和所述衬底上形成接触孔层，包括：
    在所述衬底和所述字线上形成介质层；
    刻蚀所述介质层，形成沿Y轴方向延伸的第二沟槽，所述第二沟槽穿透所述介质层并暴露出所述字线和所述衬底；
    在所述第一沟槽和第二沟槽内形成所述接触孔层；
    所述刻蚀所述金属层和所述接触孔层，包括：
    在所述金属层上形成2*N个掩膜，各所述掩膜沿X轴方向跨过所述第二沟槽且一个掩膜沿Y轴方向覆盖一条字线；
    依次刻蚀所述金属层和所述接触孔层，保留所述掩膜下方的所述金属层以形成2*N个金属线、保留所述金属线下方的所述接触孔层以形成2*N个接触孔，其中，N为正整数，2*N条所述字线、2*N个所述接触孔、2*N条所述金属线均一一对应。
  10. 根据权利要求9所述的制备方法，其中，所述字线包括位于底部的金属结构和叠设于所述金属结构上的多晶硅结构，在所述第二沟槽内形成接触孔层之前，还包括：去除所述多晶硅结构，保留所述金属结构。
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