WO2021037254A1 - 薄膜封装结构及显示面板 - Google Patents

薄膜封装结构及显示面板 Download PDF

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Publication number
WO2021037254A1
WO2021037254A1 PCT/CN2020/112299 CN2020112299W WO2021037254A1 WO 2021037254 A1 WO2021037254 A1 WO 2021037254A1 CN 2020112299 W CN2020112299 W CN 2020112299W WO 2021037254 A1 WO2021037254 A1 WO 2021037254A1
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Prior art keywords
inorganic
layer
encapsulation layer
thin film
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/112299
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English (en)
French (fr)
Chinese (zh)
Inventor
蒋志亮
王世龙
文平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Publication date
Priority to KR1020207037817A priority Critical patent/KR102521911B1/ko
Priority to MX2021007940A priority patent/MX2021007940A/es
Priority to KR1020257038840A priority patent/KR20250168698A/ko
Priority to KR1020237011185A priority patent/KR102636510B1/ko
Priority to KR1020247003237A priority patent/KR102894172B1/ko
Priority to RU2021118401A priority patent/RU2771519C1/ru
Priority to AU2020338944A priority patent/AU2020338944B2/en
Priority to BR112021012674A priority patent/BR112021012674A2/pt
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to EP20824071.3A priority patent/EP4024493A4/en
Priority to JP2020572419A priority patent/JP7544604B2/ja
Publication of WO2021037254A1 publication Critical patent/WO2021037254A1/zh
Anticipated expiration legal-status Critical
Priority to JP2024068001A priority patent/JP7741924B2/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1641—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being formed by a plurality of foldable display components
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1652—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being flexible, e.g. mimicking a sheet of paper, or rollable
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the embodiments of the present disclosure relate to a thin film packaging structure and a display panel.
  • thin film encapsulation Thin Film Encapsulation
  • the traditional thin film encapsulation structure includes an inorganic layer and an organic layer stacked in sequence.
  • the stress received during bending is relatively large, therefore, the inorganic layer is prone to fracture or the film layer separation between the packaging film structures is prone to occur, and the bendability of the display panel is reduced.
  • the purpose of the present disclosure is to provide a thin film packaging structure and a display panel, which have good bending performance.
  • the embodiments of the present disclosure provide a thin film packaging structure, which includes:
  • the first inorganic encapsulation layer is used to cover the device to be encapsulated
  • the organic encapsulation layer is formed on one side of the first inorganic encapsulation layer
  • the second inorganic encapsulation layer is formed on the side of the organic encapsulation layer away from the first inorganic encapsulation layer;
  • At least one first inorganic adjustment layer formed on the side of the first inorganic encapsulation layer away from the device to be encapsulated;
  • the oxygen content of the at least one first inorganic adjustment layer is higher than the oxygen content of the first inorganic encapsulation layer and/or the second inorganic encapsulation layer.
  • one of the at least one first inorganic adjustment layer is formed between the first inorganic encapsulation layer and the organic encapsulation layer.
  • one of the at least one first inorganic adjustment layer is formed between the organic encapsulation layer and the second inorganic encapsulation layer.
  • one of the at least one first inorganic adjustment layer is formed on a side of the second inorganic encapsulation layer away from the organic encapsulation layer.
  • one of the at least one first inorganic adjustment layer is formed on the side of the first inorganic encapsulation layer facing the device to be encapsulated.
  • the thin film packaging structure further includes:
  • a second inorganic adjustment layer formed on the side of the first inorganic encapsulation layer facing the device to be encapsulated;
  • the refractive index of the second inorganic adjustment layer is lower than the refractive index of the first inorganic encapsulation layer.
  • the material of the second inorganic adjustment layer includes lithium fluoride.
  • the material of the at least one first inorganic adjustment layer includes silicon oxide.
  • the thickness of the at least one first inorganic adjustment layer is 10 nm to 100 nm.
  • the at least one first inorganic adjustment layer includes two first inorganic adjustment layers, and one of the two first inorganic adjustment layers is located on the first inorganic adjustment layer. Between an inorganic encapsulation layer and the organic encapsulation layer, the other of the two first inorganic adjustment layers is located between the second inorganic encapsulation layer and the organic encapsulation layer.
  • the oxygen content of the first inorganic adjustment layer located between the first inorganic encapsulation layer and the organic encapsulation layer is higher than that of the first inorganic encapsulation layer;
  • the oxygen content of the first inorganic adjustment layer between the second inorganic encapsulation layer and the organic encapsulation layer is higher than that of the second inorganic encapsulation layer.
  • the thickness of the first inorganic adjustment layer located between the first inorganic encapsulation layer and the organic encapsulation layer is greater than the thickness of the first inorganic adjustment layer located between the second inorganic encapsulation layer and the organic encapsulation layer. The thickness of the first inorganic adjustment layer between the organic encapsulation layers.
  • the material of the first inorganic adjustment layer located between the first inorganic encapsulation layer and the organic encapsulation layer is the same as the material of the first inorganic encapsulation layer.
  • the material of the first inorganic adjustment layer located between the second inorganic encapsulation layer and the organic encapsulation layer is different from the material of the second inorganic encapsulation layer .
  • the material of the first inorganic encapsulation layer includes silicon oxynitride.
  • the material of the second inorganic encapsulation layer includes silicon nitride.
  • the material of the first inorganic adjustment layer located between the second inorganic encapsulation layer and the organic encapsulation layer includes silicon oxide.
  • the material of the first inorganic adjustment layer located between the first inorganic encapsulation layer and the organic encapsulation layer includes silicon oxynitride.
  • the embodiment of the present disclosure also provides a display panel, which includes:
  • the device to be packaged
  • the device to be packaged includes an organic light emitting diode device.
  • 1 to 16 respectively show schematic diagrams of thin film packaging structures according to different embodiments of the present disclosure.
  • the first inorganic encapsulation layer 11. The organic encapsulation layer; 12. The second inorganic encapsulation layer; 13. The first inorganic adjustment layer; 14. The second inorganic adjustment layer.
  • the thin film encapsulation structure may include a first inorganic encapsulation layer 10, an organic encapsulation layer 11, a second inorganic encapsulation layer 12 and at least one first inorganic adjustment layer 13. among them:
  • the first inorganic encapsulation layer 10 is used to cover the device to be encapsulated.
  • the device to be encapsulated can be an OLED device, that is, the thin film encapsulation structure can be used to encapsulate an OLED device, and the OLED device can be encapsulated through the first inorganic encapsulation layer 10 Insulate water and oxygen from entering the OLED device, thereby ensuring the service life of the OLED device.
  • the first inorganic packaging layer 10 may be silicon oxynitride, and the silicon oxynitride may be deposited on the surface of the device to be packaged by a CVD (Chemical Vapor Deposition, chemical vapor deposition) method to realize the packaging of the device to be packaged.
  • CVD Chemical Vapor Deposition, chemical vapor deposition
  • the organic encapsulation layer 11 may be formed on one side of the first inorganic encapsulation layer 10; by providing the organic encapsulation layer 11, the flatness of the thin-film encapsulation structure can be improved on the one hand, and the flatness of the thin film encapsulation structure can be increased on the other hand.
  • the bending ability of the entire film packaging structure may be provided.
  • the organic encapsulation layer 11 may be an inkjet printing layer, which is formed by inkjet printing an organic liquid.
  • the second inorganic encapsulation layer 12 may be formed on the side of the organic encapsulation layer 11 away from the first inorganic encapsulation layer 10, and the encapsulation effect of the thin film encapsulation structure can be further improved by providing the second inorganic encapsulation layer 12.
  • the second inorganic encapsulation layer 12 may be silicon nitride, and the silicon nitride may be deposited on the organic encapsulation layer 11 by chemical vapor deposition.
  • the first inorganic adjustment layer 13 may be formed on the side of the first inorganic encapsulation layer 10 away from the device to be encapsulated, and the elastic modulus of the first inorganic adjustment layer 13 is higher than that of the first inorganic encapsulation layer 10. And the elastic modulus of the second inorganic encapsulation layer 12.
  • the stability of the thin-film encapsulation structure during the bending process can be increased, and The film packaging structure is prevented from breaking or the film layers are separated, and the packaging stability of the thin film packaging structure is ensured, thereby improving the bending performance and service life of the display panel.
  • the thickness of the first inorganic adjustment layer 13 may be 10 nm to 100 nm, such as: 10 nm, 30 nm, 50 nm, 70 nm, 90 nm, 100 nm, etc., that is, the thickness of the first inorganic adjustment layer 13 may be Take the value between 10nm and 100nm.
  • the thickness of the first inorganic adjustment layer 13 by designing the thickness of the first inorganic adjustment layer 13 to be between 10 nm and 100 nm, on the one hand, it can prevent the first inorganic adjustment layer 13 from being too thin to be unable to adjust the position of the stress neutral layer, and on the other hand, On the one hand, it can avoid the situation that the first inorganic adjustment layer 13 is too thick, which results in low light extraction efficiency of the thin film packaging structure.
  • the stress-neutral layer includes structures (for example, surfaces) formed at all positions where the tangential stress inside the film layer is zero when the film layer undergoes bending deformation.
  • the first inorganic adjustment layer 13 may be silicon oxide.
  • the silicon oxide may be deposited on one side of the first inorganic encapsulation layer 10 by chemical vapor deposition.
  • the silicon oxide has a high elastic modulus. , High transmittance and other characteristics, so that while the structure of the film encapsulation structure is stable, it can also increase the transmittance of the film encapsulation structure.
  • the thickness of the silicon oxide is easy to control.
  • the thickness of the first inorganic adjustment layer 13 can be adjusted according to the actual problems in the bending process of the thin film packaging structure, so that the The stress-neutral layer at the bend is closer to the inorganic encapsulation layer that is prone to fracture or separation.
  • the present embodiment can not only adjust the thickness of the first inorganic adjustment layer 13 according to the actual problems existing in the bending process of the film packaging structure, so that the stress neutral layer at the bending position is closer to be prone to breakage or breakage. Separate inorganic encapsulation layer. Moreover, the positional relationship between the first inorganic adjustment layer 13 and the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12 can be adjusted according to the actual problems existing in the bending process of the thin film encapsulation structure, so that the The stress-neutral layer is closer to the inorganic encapsulation layer that is prone to fracture or separation.
  • the first inorganic encapsulation layer 10 of the thin-film encapsulation structure is more likely to be broken or separated from other film layers during the actual bending process of the display panel, as shown in FIG.
  • An inorganic adjustment layer 13 is formed between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11, so that the stress neutral layer at the bend can be offset to the first inorganic encapsulation layer 10, that is, the first inorganic encapsulation layer is reduced.
  • the distance between the inorganic encapsulation layer 10 and the stress neutral layer can reduce the first inorganic encapsulation layer under the same bending radius.
  • the deformation of the layer 10 can alleviate the situation that the first inorganic encapsulation layer 10 is broken or separated from other film layers during the bending process, thereby ensuring the stability of the film encapsulation structure to improve the encapsulation effect of the film encapsulation structure .
  • the first inorganic adjustment layer 13 is silicon oxide and the first inorganic encapsulation layer 10 is silicon oxynitride
  • the oxygen content of the first inorganic adjustment layer 13 is greater than that of the first inorganic encapsulation layer 10 .
  • the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 is smaller than the contact angle between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11. Therefore, after curing, the first inorganic adjustment layer 13 and the organic encapsulation layer 11 The bonding strength therebetween is greater than the bonding strength between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11.
  • the first inorganic adjustment layer 13 between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11, compared to the case where the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 are directly combined, it is also The bonding stability between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 can be increased, and the phenomenon of interlayer separation between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 can be avoided, thereby ensuring the stability of the thin-film encapsulation structure. Improve the packaging effect of the thin film packaging structure.
  • the oxygen content of the first inorganic adjustment layer 13 is greater than that of the second inorganic encapsulation layer 12. Therefore, the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 is smaller than the contact angle between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11.
  • the first inorganic adjustment layer 13 and the organic encapsulation layer The bonding strength between the layers 11 may be greater than the bonding strength between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11.
  • this embodiment is compared with the embodiment shown in FIG. 1, except that a first inorganic adjustment layer 13 is formed between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11.
  • a first inorganic adjustment layer 13 can be formed between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11. Compared with the case where the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 are directly combined, the first inorganic adjustment layer can be increased. 2.
  • the stability of the combination between the inorganic encapsulation layer 12 and the organic encapsulation layer 11 to avoid interlayer separation between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11, thereby ensuring the stability of the thin-film encapsulation structure and improving the thin-film encapsulation structure The packaging effect.
  • the arrangement in this embodiment can make the stress-neutral layer further toward the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12.
  • An inorganic encapsulation layer 10 and a second inorganic encapsulation layer 12 are offset to reduce the distance between the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12 and the stress neutral layer, thereby reducing the first inorganic encapsulation layer 10 And the deformation of the second inorganic encapsulation layer 12 to alleviate the situation that the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12 are broken or separated from other film layers during the bending process, thereby ensuring the thin film encapsulation structure Stability to improve the packaging effect of the film packaging structure.
  • the thickness of the first inorganic adjustment layer 13 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 may be smaller than that of the first inorganic adjustment layer between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11
  • the thickness of 13, but not limited to this, can also be greater than or equal to, depending on the specific circumstances.
  • the material of the first inorganic adjustment layer 13 formed between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 includes silicon oxynitride
  • the material of the first inorganic encapsulation layer 10 includes silicon oxynitride
  • the material of the first inorganic adjustment layer 13 formed between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 includes silicon oxide
  • the material of the second inorganic encapsulation layer 12 includes silicon oxide.
  • the first inorganic adjustment layer 13 may be formed Between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11, as shown in FIG. 3; or the first inorganic adjustment layer 13 is formed on the side of the second inorganic encapsulation layer 12 away from the organic encapsulation layer 11, as shown in FIG.
  • a first inorganic adjustment layer 13 is formed between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11, and another first inorganic adjustment layer 13 is formed on the second inorganic encapsulation layer 12 away from the organic encapsulation layer 11 One side, as shown in Figure 5.
  • the stress-neutral layer at the bend can be shifted to the second inorganic encapsulation layer 12, that is, the distance between the second inorganic encapsulation layer 12 and the stress-neutral layer is reduced, which is compared with the traditional
  • the second inorganic encapsulation layer 12 is directly combined with the organic encapsulation layer 11, and the deformation of the second inorganic encapsulation layer 12 can be reduced under the same bending radius, so that the bending process of the second inorganic encapsulation layer 12 can be relieved.
  • the stability of the thin film packaging structure can be ensured to improve the packaging effect of the thin film packaging structure.
  • the first inorganic adjustment layer 13 is silicon oxide and the second inorganic encapsulation layer 12 is silicon nitride
  • the oxygen content of the first inorganic adjustment layer 13 is greater than that of the second inorganic encapsulation layer 12 .
  • the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 is smaller than the contact angle between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11. Therefore, after curing, the first inorganic adjustment layer 13 and the organic encapsulation layer 11 The bonding strength therebetween is greater than the bonding strength between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11.
  • this embodiment chooses to adopt the solution of having the first inorganic adjustment layer 13 between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11.
  • It can also increase the stability of the combination between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11, avoid the phenomenon of interlayer separation between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11, thereby ensuring the stability of the thin-film encapsulation structure.
  • the film packaging structure In order to improve the packaging effect of the film packaging structure.
  • the oxygen content of the first inorganic adjustment layer 13 is greater than that of the first inorganic encapsulation layer 10. Therefore, the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 is smaller than the contact angle between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11. After curing, the first inorganic adjustment layer 13 and the organic encapsulation layer The bonding strength between the layers 11 is greater than the bonding strength between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11.
  • the first inorganic adjustment layer 13 is formed on the second inorganic encapsulation layer 12 and the organic encapsulation layer 12 Between the layers 11, and/or the first inorganic adjustment layer 13 is formed on the side of the second inorganic encapsulation layer 12 away from the organic encapsulation layer 11; it can also be between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11
  • the formation of the first inorganic adjustment layer 13 can increase the stability of the bonding between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11, and avoid the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 directly.
  • An inorganic encapsulation layer 10 and an organic encapsulation layer 11 have an interlayer separation phenomenon, which can ensure the stability of the thin-film encapsulation structure and improve the encapsulation effect of the thin-film encapsulation structure
  • the arrangement in this embodiment can make the stress-neutral layer further toward the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12.
  • An inorganic encapsulation layer 10 and a second inorganic encapsulation layer 12 are offset to reduce the distance between the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12 and the stress neutral layer, thereby reducing the first inorganic encapsulation layer 10 And the deformation of the second inorganic encapsulation layer 12 to alleviate the situation that the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12 are broken or separated from other film layers during the bending process, thereby ensuring the thin film encapsulation structure Stability to improve the packaging effect of the film packaging structure.
  • the thickness of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 may be smaller than that of the first inorganic adjustment layer between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11
  • the thickness of 13, but not limited to this, can also be greater than or equal to, depending on the specific circumstances.
  • the first inorganic encapsulation layer 10 faces one of the devices to be encapsulated.
  • the first inorganic adjustment layer 13 is also provided on the side. By providing the first inorganic adjustment layer 13, the stress-neutral layer can be shifted to the first inorganic encapsulation layer 10, or the stress-neutral layer can be moved to the first inorganic encapsulation layer 10 and the first inorganic encapsulation layer 10 at the same time.
  • the offset of the second inorganic encapsulation layer 12 depends on the initial position of the stress neutral layer, so as to alleviate the fracture or separation of the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12 from other film layers during the bending process. Circumstances, the stability of the thin film packaging structure can then be ensured, so as to improve the packaging effect of the thin film packaging structure.
  • the first inorganic adjustment layer 13 of some embodiments of the present disclosure is silicon oxide.
  • This silicon oxide does not absorb water and has good water and oxygen blocking capability, so as to further prevent water and oxygen from entering the inside of the device to be packaged and improve product reliability.
  • the silicon oxide has a relatively low refractive index, which will not affect the light extraction efficiency.
  • the main difference lies in that the first inorganic encapsulation layer 10 faces one of the devices to be encapsulated.
  • a second inorganic adjustment layer 14 is provided on the side, wherein the refractive index of the second inorganic adjustment layer 14 is lower than the refractive index of the first inorganic encapsulation layer 10.
  • the second inorganic adjustment layer 14 may be lithium fluoride.
  • the thin film packaging structure of this embodiment When the thin film packaging structure of this embodiment is used to package a display device, the light extraction efficiency of the display panel can be improved.
  • the first inorganic adjustment layer 13 in any of the foregoing embodiments is not limited to silicon oxide, but may also be silicon oxynitride, but the oxygen content of the first inorganic adjustment layer 13 should be greater than that of the first inorganic encapsulation layer 10. The oxygen content in order to achieve the characteristics of high elastic modulus and high bonding strength.
  • the oxygen content of at least one first inorganic adjustment layer 13 is higher than the oxygen content of the first inorganic encapsulation layer 10 and/or the second inorganic encapsulation layer 12. the amount.
  • the oxygen content of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is higher than that of the first inorganic encapsulation layer 10 and the second inorganic encapsulation layer 12.
  • the amount of oxygen makes the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 smaller than the contact angle between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11, thereby increasing the first inorganic adjustment layer 13 and the first inorganic encapsulation layer 10, and increase the stability of the thin-film packaging structure during the bending process to avoid the thin-film packaging structure from breaking or separation between the film layers, ensuring the packaging stability of the thin-film packaging structure, thereby improving the display panel The bending performance and service life.
  • the oxygen content of the first inorganic adjustment layer located between the first inorganic encapsulation layer and the organic encapsulation layer is higher than that of the first inorganic encapsulation layer;
  • the oxygen content of the first inorganic adjustment layer in between is higher than that of the second inorganic encapsulation layer.
  • the oxygen content of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is higher than the oxygen content of the first inorganic encapsulation layer 10.
  • the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is smaller than the contact angle between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11. Therefore, after curing, the bonding strength between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is greater than that between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 The bonding strength.
  • the oxygen content of the first inorganic adjustment layer 13 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 is higher than the oxygen content of the second inorganic encapsulation layer 12.
  • the contact angle between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 is smaller than the contact angle between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11.
  • the bonding strength between the first inorganic adjustment layer 13 and the organic encapsulation layer 11 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 may be greater than that between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 Bond strength.
  • the material of the first inorganic encapsulation layer 10 includes silicon oxynitride.
  • the silicon oxynitride can be deposited on the surface of the device to be packaged by a CVD (Chemical Vapor Deposition) method, so as to realize the packaging of the device to be packaged.
  • the material of the second inorganic encapsulation layer 12 includes silicon nitride.
  • the silicon nitride can be deposited on the organic encapsulation layer 11 by a chemical vapor deposition method.
  • the first inorganic adjustment layer located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 The material of 13 includes silicon oxide or silicon oxynitride.
  • the material of the first inorganic adjustment layer 13 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 includes silicon oxide. Silicon oxide has the characteristics of high elastic modulus, high transmittance, etc., so that while the structure of the film package structure is stable, it can also increase the transmittance of the film package structure.
  • the oxygen content of the material (such as silicon oxide) selected for the first inorganic adjustment layer 13 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 is greater than the oxygen content of the material (such as silicon nitride) selected for the second inorganic encapsulation layer 12 content.
  • the bonding strength of the first inorganic adjustment layer 13 and the second inorganic encapsulation layer 12 is increased.
  • the material of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 includes oxynitride. Silicon or silicon oxide.
  • the material of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 includes silicon oxynitride.
  • the oxygen content of the selected material (such as silicon oxynitride) of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is greater than that of the selected material (such as silicon oxynitride) of the first inorganic encapsulation layer 10 Oxygen content.
  • the bonding strength between the first inorganic adjustment layer 13 and the first inorganic encapsulation layer 10 is increased.
  • the thickness of the first inorganic adjustment layer 13 between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is greater than that of the second inorganic encapsulation layer 12 and the organic encapsulation layer 11.
  • the thickness of the first inorganic encapsulation layer 13 is adjusted so that the stress-neutral layer at the bend is closer to the inorganic encapsulation layer that is prone to fracture or separation, such as the first inorganic encapsulation layer 10.
  • the material of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 and the first The material of the inorganic encapsulation layer 10 is the same.
  • the material of the first inorganic adjustment layer 13 and the material of the first inorganic encapsulation layer 10 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 both include silicon oxynitride.
  • the oxygen content of the silicon oxynitride of the first inorganic adjustment layer 13 located between the first inorganic encapsulation layer 10 and the organic encapsulation layer 11 is greater than the oxygen content of the silicon oxynitride of the first inorganic encapsulation layer 10.
  • the bonding strength between the first inorganic adjustment layer 13 and the first inorganic encapsulation layer 10 is increased.
  • the first inorganic adjustment layer located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 The material of 13 is different from the material of the second inorganic encapsulation layer 12.
  • the material of the first inorganic adjustment layer 13 located between the second inorganic encapsulation layer 12 and the organic encapsulation layer 11 includes silicon oxide
  • the material of the second inorganic encapsulation layer 12 includes silicon nitride, so that it is located on the second inorganic encapsulation layer 12.
  • the oxygen content of the first inorganic adjustment layer 13 between the organic encapsulation layer 11 and the organic encapsulation layer 11 is greater than the oxygen content of the second inorganic encapsulation layer 12. Therefore, while ensuring the light transmittance of the thin-film packaging structure, the stability of the thin-film packaging structure during the bending process is increased to prevent the thin-film packaging structure from breaking or separating between the film layers, and ensuring the packaging stability of the thin-film packaging structure It can improve the bending performance and service life of the display panel.
  • At least one embodiment of the present disclosure also provides a display panel, which can be applied to display devices such as mobile phones and computers.
  • the display panel may include a device to be packaged (not shown in the figure) and a film for packaging the device to be packaged.
  • the packaging structure, the device to be packaged may include an OLED display device, and the thin-film packaging structure may be the thin-film packaging structure described in any of the above embodiments, which will not be described in detail here.
  • the display panel of this embodiment may be a flexible display panel.
  • the thin film packaging structure and the display panel provided by the embodiments of the present disclosure are provided with a first inorganic adjustment layer with a higher elastic modulus on the side of the first inorganic packaging layer away from the device to be packaged, which can increase the bending process of the thin film packaging structure
  • a first inorganic adjustment layer with a higher elastic modulus on the side of the first inorganic packaging layer away from the device to be packaged, which can increase the bending process of the thin film packaging structure
  • the packaging stability of the thin film packaging structure is ensured, and the bending performance and service life of the display panel can be improved.

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AU2020338944A AU2020338944B2 (en) 2019-08-30 2020-08-29 Thin film encapsulation structure and display panel
KR1020257038840A KR20250168698A (ko) 2019-08-30 2020-08-29 박막 패키징 구조 및 디스플레이 디바이스
KR1020237011185A KR102636510B1 (ko) 2019-08-30 2020-08-29 박막 패키징 구조 및 디스플레이 패널
KR1020247003237A KR102894172B1 (ko) 2019-08-30 2020-08-29 박막 패키징 구조 및 디스플레이 패널
RU2021118401A RU2771519C1 (ru) 2019-08-30 2020-08-29 Тонкопленочная инкапсулирующая структура и дисплейная панель
KR1020207037817A KR102521911B1 (ko) 2019-08-30 2020-08-29 박막 패키징 구조 및 디스플레이 패널
JP2020572419A JP7544604B2 (ja) 2019-08-30 2020-08-29 フィルムパッケージ構造及び表示パネル
BR112021012674A BR112021012674A2 (pt) 2019-08-30 2020-08-29 Estrutura de encapsulamento de filme fino e painel de display
EP20824071.3A EP4024493A4 (en) 2019-08-30 2020-08-29 THIN FILM ENCAPSULATION STRUCTURE AND DISPLAY PANEL
MX2021007940A MX2021007940A (es) 2019-08-30 2020-08-29 Estructura de encapsulacion de pelicula delgada y panel de visualizacion.
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