WO2015145533A1 - 発光装置及び発光装置の製造方法 - Google Patents
発光装置及び発光装置の製造方法 Download PDFInfo
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- WO2015145533A1 WO2015145533A1 PCT/JP2014/058041 JP2014058041W WO2015145533A1 WO 2015145533 A1 WO2015145533 A1 WO 2015145533A1 JP 2014058041 W JP2014058041 W JP 2014058041W WO 2015145533 A1 WO2015145533 A1 WO 2015145533A1
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- Prior art keywords
- substrate
- resin layer
- emitting device
- light emitting
- layer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000011347 resin Substances 0.000 claims abstract description 161
- 229920005989 resin Polymers 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 132
- 239000000463 material Substances 0.000 claims abstract description 41
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 156
- 230000008646 thermal stress Effects 0.000 description 12
- 238000000605 extraction Methods 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/422—Luminescent, fluorescent, phosphorescent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/206—Organic displays, e.g. OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a light emitting device and a method for manufacturing the light emitting device.
- Patent Document 1 describes that a resin film and an inorganic film that are polymer films are alternately laminated on both surfaces of a resin film substrate, and then a light emitting element is formed on the resin film substrate.
- the resin film substrate is formed of polyethylene terephthalate or the like
- the resin film is formed of an ultraviolet curable monomer or the like
- the inorganic film is formed of SiO 2 , Al 2 O 3 , ZnO, ITO, or the like. Is formed.
- Patent Document 2 describes that a polyimide molded body is formed by applying a varnish on a support such as a glass substrate or a resin film, drying and curing the varnish, and then removing the support. ing.
- the present inventor considered removing the support substrate after forming the resin substrate on the support substrate and further forming the light emitting portion on the resin substrate.
- the resin substrate has a multilayer structure.
- a thermal stress may be generated in the resin substrate after the resin substrate is peeled from the support substrate. When thermal stress occurs in the resin substrate, the light emitting device is warped.
- the problem to be solved by the present invention is to prevent the light emitting device from warping even when the resin substrate and the light emitting portion are formed on the support substrate and then the support substrate is removed from the resin substrate.
- the resin substrate and the light emitting portion are formed on the support substrate and then the support substrate is removed from the resin substrate.
- the support substrate is removed from the resin substrate.
- the invention according to claim 1 is a flexible substrate; A light emitting part formed on the first surface of the substrate; A sealing part for sealing the light emitting part; With The substrate is A first resin layer having a first resin material; A second resin layer that has the first resin material and is located closer to the first surface than the first resin layer; A first inorganic layer located between the first resin layer and the second resin layer; It is a light-emitting device provided with.
- the invention according to claim 8 is a step of forming a substrate on a support substrate; Forming a light emitting portion on the substrate; Forming a sealing portion for sealing the light emitting portion on the substrate; With The step of forming the substrate includes: Forming a first resin layer on the support substrate using a first resin material; Forming a first inorganic layer on the first resin layer; Forming a second resin layer on the first inorganic layer using the first resin material; The manufacturing method of the light-emitting device which has this.
- FIG. 6 is a cross-sectional view illustrating a configuration of a light emitting device according to Example 2.
- FIG. 6 is a cross-sectional view illustrating a configuration of a light emitting device according to Example 3.
- FIG. 6 is a cross-sectional view for explaining the method for manufacturing the light emitting device according to Example 4.
- FIG. 1 is a cross-sectional view showing a configuration of a light emitting device 10 according to an embodiment.
- the light emitting device 10 includes a flexible substrate 100, a light emitting unit 200, and a sealing member 300 (sealing unit).
- the light emitting unit 200 is formed on the first surface of the substrate 100 (upper surface in the example shown in FIG. 1).
- the sealing member 300 seals the light emitting unit 200.
- the substrate 100 includes a first resin layer 110, a first inorganic layer 120, and a second resin layer 130.
- the first resin layer 110 is formed from a first resin material.
- the second resin layer 130 is made of the first resin material, and is located closer to the first surface of the substrate 100 than the first resin layer 110.
- the first inorganic layer 120 is located between the first resin layer 110 and the second resin layer 130.
- the thickness of the substrate 100 is, for example, 20 ⁇ m or more and 300 ⁇ m or less. Details will be described below.
- the first resin layer 110 and the second resin layer 130 are formed, for example, by applying a first resin material to a support substrate 400 (described later with reference to FIGS. 2 and 3).
- the first resin material is preferably a resin having an imide bond, for example, a polyimide resin.
- the first resin layer 110 is preferably thinner than the second resin layer 130.
- the film thickness of the first resin layer 110 is, for example, 5 ⁇ m or more and 100 ⁇ m or less
- the film thickness of the second resin layer 130 is, for example, 10 ⁇ m or more and 200 ⁇ m or less.
- the second resin layer 130 may be formed of a resin material different from that of the first resin layer 110.
- the surface of the substrate 100 opposite to the first surface is formed by the first resin layer 110.
- the surface roughness Ra of the second surface is the surface roughness Ra of the surface of the first resin layer 110 opposite to the second surface (the surface in contact with the first inorganic layer 120 in the example shown in the figure). Smaller than. This is because the first resin layer 110 is formed using the support substrate 400 as will be described in detail later.
- the first inorganic layer 120 is, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and is a film (a moisture proof film and / or a barrier film) that suppresses the permeation of moisture and oxygen in the thickness direction of the substrate 100. ).
- the film thickness of the first inorganic layer 120 is, for example, not less than 20 nm and not more than 2 ⁇ m.
- substrate 100 is 0.01% or more and 10% or less, for example.
- the first inorganic layer 120 is formed using a vapor phase growth method such as a sputtering method, a CVD method, or an ALD method.
- the first inorganic layer 120 is formed of a material having a Young's modulus higher than that of the first resin material. For this reason, the Young's modulus of the first inorganic layer 120 is larger than the Young's modulus of the first resin layer 110 and the Young's modulus of the second resin layer 130.
- the substrate 100 has a third resin layer 140.
- the third resin layer 140 is formed closer to the first surface of the substrate 100 than the second resin layer 130 and is provided to planarize the first surface of the substrate 100.
- the third resin layer 140 is made of, for example, a photocurable acrylic resin.
- the linear expansion coefficient of the material (second resin material) constituting the third resin layer 140 is different from the linear expansion coefficient of the first resin material.
- the linear expansion coefficient of the material constituting the third resin layer 140 (second resin material) may be larger or smaller than the linear expansion coefficient of the first resin material.
- the substrate 100 includes the second inorganic layer 122 between the second resin layer 130 and the third resin layer 140.
- the second inorganic layer 122 has the same configuration as the first inorganic layer 120. In this case, since the inorganic layer exists on the first surface side and the second surface side of the second resin layer 130, it is possible to prevent the substrate 100 from warping. Note that the second inorganic layer 122 may be omitted.
- substrate 100 has translucency with respect to the light which the light emission part 200 light-emits.
- the light emitting unit 200 is formed on the first surface of the substrate 100.
- the light emitting unit 200 includes a light emitting element such as an organic EL element.
- the light emitting element is an organic EL element
- the light emitting element has a configuration in which an organic layer is sandwiched between the first electrode and the second electrode.
- At least one of the first electrode and the second electrode is a translucent electrode.
- the remaining electrodes are made of a metal such as Al or Ag.
- the material of the translucent electrode is, for example, a network using an inorganic material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), a conductive polymer such as a polythiophene derivative, or a nanowire made of silver or carbon.
- Electrode When the light-emitting element is a bottom emission type, the electrode on the substrate 100 side is a light-transmitting electrode, and the electrode on the side opposite to the substrate 100 is an electrode that reflects light such as Al and Ag.
- the electrode on the side opposite to the substrate 100 is a light-transmitting electrode
- the electrode on the substrate 100 side is an electrode that reflects light such as Al and Ag.
- the light-emitting element may be a light-transmitting light-emitting device using both electrodes (first electrode and second electrode) as light-transmitting electrodes (dual emission type).
- the organic layer has a structure in which a hole transport layer, a light emitting layer, and an electron transport layer are laminated in this order.
- a hole transport layer is formed on the first electrode.
- an electron transport layer is formed on the first electrode.
- a hole injection layer may be provided between the hole transport layer and the light emitting layer, or an electron injection layer may be provided between the electron transport layer and the light emitting layer.
- Each layer of the organic layer may be formed by a coating method or a vapor deposition method, and a part thereof may be formed by a coating method and the rest may be formed by a vapor deposition method.
- the organic layer may be formed by a vapor deposition method using a vapor deposition material, or may be formed by an ink jet method, a printing method, or a spray method using a coating material.
- the light emitting unit 200 may have only one light emitting element or may have a plurality of light emitting elements. In the latter case, the light emitting unit 200 may include a plurality of types of light emitting elements that emit different colors (for example, red, green, and blue). In this case, the terminals of the plurality of types of light emitting elements are provided independently of each other.
- the light emitting unit 200 is a display device, the light emitting unit 200 includes a plurality of light emitting elements arranged in a matrix.
- the light emitting unit 200 is sealed with a sealing member 300.
- the light emitting unit 200 is a metal foil or a metal plate (for example, an Al foil or an Al plate), and is fixed to the first surface of the substrate 100 using an adhesive layer 310.
- FIG. 2 and 3 are cross-sectional views showing a method for manufacturing the light emitting device 10 shown in FIG.
- a substrate 100 is formed using a support substrate 400.
- the support substrate 400 is, for example, a glass substrate, and the surface roughness Ra is small.
- the surface roughness Ra of the support substrate 400 that is a glass substrate may be smaller than the surface roughness Ra on the second surface side of the first resin layer 110.
- the first resin layer 110 is formed by applying a first resin material on the support substrate 400.
- the first resin layer 110 is formed using, for example, a die coder, but may be formed using a spin coating method or a screen printing method. As described above, since the surface roughness Ra of the support substrate 400 is small, the surface roughness Ra of the second surface (surface on the support substrate 400 side) of the first resin layer 110 is also small.
- a first inorganic layer 120 is formed on the first resin layer 110 by using a vapor phase growth method.
- the second resin layer 130 is formed on the first inorganic layer 120.
- the method for forming the second resin layer 130 is the same as the method for forming the first resin layer 110.
- the second inorganic layer 122 is formed on the second resin layer 130.
- the method for forming the second inorganic layer 122 is the same as the method for forming the first inorganic layer 120.
- the third resin layer 140 is formed on the second inorganic layer 122.
- the method for forming the third resin layer 140 is the same as the method for forming the first resin layer 110. In this way, the substrate 100 is formed.
- the third resin layer 140 is formed on the second resin layer 130.
- the first inorganic layer 120, the second resin layer 130, the second inorganic layer 122, and the third resin layer 140 are overlapped, so that the defects (also referred to as voids) of the first inorganic layer 120 are second resin.
- Layer 130 fills. However, moisture, oxygen, or the like may enter through a part of the second resin layer 130 filling the defect.
- the second inorganic layer 122 is formed on the second resin layer 130, such intrusion of moisture, oxygen, and the like can be prevented.
- a lower electrode described later can be formed more flatly. In this case, the occurrence of leaks can be suppressed.
- the first electrode, the organic layer, and the second electrode of the light emitting unit 200 are formed in this order on the substrate 100 with the substrate 100 positioned on the support substrate 400.
- the sealing member 300 is fixed to the substrate 100 using the adhesive layer 310. Thereafter, the substrate 100, the light emitting unit 200, and the sealing member 300 are removed from the support substrate 400.
- the substrate 100 is heated. For this reason, thermal stress is generated in the substrate 100.
- This thermal stress is caused by the first inorganic layer 120 and the second inorganic layer 122 in addition to the first resin layer 110, the second resin layer 130, and the third resin layer 140 described above.
- the magnitude of thermal deformation that occurs in the first resin layer 110 and the second resin layer 130 is greater than the magnitude of thermal deformation that occurs in the first inorganic layer 120 and the second inorganic layer 122.
- a plurality of light emitting devices 10 may be formed using one support substrate 400, and then the plurality of light emitting devices 10 may be separated from each other. This separation process may be performed before removing the substrate 100, the light emitting unit 200, and the sealing member 300 from the support substrate 400, or may be performed after removing. In the latter case, the support substrate 400 may be reused.
- the substrate 100 includes the first inorganic layer 120 between the first resin layer 110 and the second resin layer 130.
- the Young's modulus of the material constituting the first inorganic layer 120 is higher than the Young's modulus of the material constituting the first resin layer 110 and the second resin layer 130. For this reason, even if the board
- the first resin layer 110 and the second resin layer 130 are formed of the same resin material (first resin material), the substrate 100 is compared with the case where they are formed of different resin materials. Can be prevented from warping.
- the second inorganic layer 122 is formed, inorganic layers having a high Young's modulus are disposed on both surfaces of the substrate 100, and warpage of the substrate can be further suppressed.
- the substrate 100 has the third resin layer 140. Since the third resin layer 140 is formed of a material different from that of the first resin layer 110 and the second resin layer 130, thermal stress is particularly likely to occur in the substrate 100. In contrast, since the substrate 100 includes the first inorganic layer 120 as described above, the substrate 100 can be prevented from warping due to thermal stress.
- a first resin layer 110 is provided between the support substrate 400 and the first inorganic layer 120. For this reason, compared with the case where the support substrate 400 and the 1st inorganic layer 120 are contacting, the board
- substrate 100 is easy to peel from the support substrate 400.
- FIG. 4 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the first embodiment.
- the light emitting device 10 according to this example has the same configuration as the light emitting device 10 according to the embodiment except for the configuration of the substrate 100.
- the substrate 100 has the third inorganic layer 124 on the third resin layer 140.
- the first surface of the substrate 100 is constituted by the third inorganic layer 124.
- the third inorganic layer 124 is formed of the same material as that of the first inorganic layer 120 and is formed using the same method as that of the first inorganic layer 120.
- the substrate 100 since the substrate 100 includes the first inorganic layer 120, the substrate 100 can be prevented from warping due to thermal stress. In addition, since the third inorganic layer 124 is provided, the substrate 100 can be further prevented from warping due to thermal stress, and moisture and the like can be further prevented from penetrating in the thickness direction of the substrate 100.
- FIG. 5 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the second embodiment.
- the light emitting device 10 according to this example is the same as the light emitting device 10 according to the embodiment or example 1 except that the sealing film 302 (sealing portion) is provided instead of the sealing member 300. It is a configuration.
- FIG. 5 shows the same case as in the first embodiment.
- the sealing film 302 is an aluminum oxide film, for example, and is formed by using, for example, an ALD (Atomic Layer Deposition) method.
- ALD Advanced Laser Deposition
- the material of the sealing film 302 for example, titanium oxide, silicon oxide, silicon oxynitride, or a stacked body thereof can be used.
- the film thickness of the sealing film 302 is, for example, not less than 10 nm and not more than 2 ⁇ m.
- the sealing film 302 covers at least a portion located around the light emitting unit 200 among the light emitting unit 200 and the substrate 100.
- the sealing film 302 may be formed using a film formation method other than the ALD method, for example, a CVD method.
- the sealing film 302 is formed after the light emitting unit 200 is formed and before the support substrate 400 is removed from the substrate 100.
- the substrate 100 on which the sealing film 302 is formed has a higher Young's modulus than the substrate 100 on which the sealing film 302 is not formed.
- the substrate 100 since the substrate 100 includes the first inorganic layer 120 and the sealing film 302, the substrate 100 can be prevented from warping due to thermal stress.
- FIG. 6 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the third embodiment.
- the light emitting device 10 according to the present example has the same configuration as that of the embodiment or any one of Examples 1 and 2 except that a plurality of particles 112 are introduced into the first resin layer 110. This figure shows the same case as in the first embodiment.
- the particles 112 are introduced into the first resin layer 110 in order to scatter light and increase the light extraction efficiency from the substrate 100.
- the particles 112 are made of, for example, an inorganic oxide such as titanium oxide, zirconium oxide, yttrium oxide, aluminum oxide, or silicon oxide, and the average particle size is, for example, 20 nm or more and 2 ⁇ m or less. It is desirable that the material constituting the particles 112 has a high refractive index. By adjusting the content of the particles 112 in the first resin layer 110, the Haze value in the first resin layer 110 can be set to about 90%.
- the particles 112 are mixed in advance with a coating material that becomes the first resin layer 110 and the second resin layer 130.
- a planarizing resin layer may be provided between the first resin layer 110 and the first inorganic layer 120.
- This resin layer is formed using the same material as that of the third resin layer 140, for example.
- the substrate 100 since the substrate 100 includes the first inorganic layer 120, the substrate 100 can be prevented from warping due to thermal stress.
- the plurality of particles 112 are introduced into the first resin layer 110, the light extraction efficiency of the light emitting device 10 can be increased without attaching a light extraction film to the first resin layer 110.
- the first resin layer 110 since the first resin layer 110 includes the plurality of particles 112, the Young's modulus is relatively large. For this reason, the Young's modulus of the substrate 100 is larger than the case where the plurality of particles 112 are not provided.
- the adhesion between the first resin layer 110 and the support substrate 400 is weakened. Therefore, it becomes easy to remove the substrate 100 from the support substrate 400.
- the thermal expansion coefficient of the first resin layer 110 is reduced by introducing the particles 112. Accordingly, the substrate 100 is less likely to warp.
- FIG. 7 is a cross-sectional view for explaining the method for manufacturing the light emitting device 10 according to Example 4, and corresponds to FIG. 3 in the embodiment.
- the manufacturing method of the light-emitting device 10 according to the present example is the same as that of the embodiment or any of Examples 1 to 3 except that fine unevenness is formed on the surface of the support substrate 400 on which the substrate 100 is formed.
- the configuration is the same as the manufacturing method of the light emitting device 10.
- Fine irregularities are formed on the second surface (light extraction surface) of the first resin layer 110 of the substrate 100.
- the height difference of the unevenness is, for example, 50 nm or more and 5 ⁇ m or less, and the interval between adjacent convex portions is, for example, 100 nm or more and 200 ⁇ m or less.
- the substrate 100 since the substrate 100 includes the first inorganic layer 120, the substrate 100 can be prevented from warping due to thermal stress. Moreover, since the fine unevenness
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Abstract
Description
前記基板の第1面に形成された発光部と、
前記発光部を封止する封止部と、
を備え、
前記基板は、
第1樹脂材料を有する第1樹脂層と、
前記第1樹脂材料を有し、前記第1樹脂層よりも前記第1面側に位置する第2樹脂層と、
前記第1樹脂層と前記第2樹脂層の間に位置する第1無機層と、
を備える発光装置である。
前記基板に発光部を形成する工程と、
前記基板に前記発光部を封止する封止部を形成する工程と、
を備え、
前記基板を形成する工程は、
前記支持基板上に第1樹脂材料を用いて第1樹脂層を形成する工程と、
前記第1樹脂層上に第1無機層を形成する工程と、
前記第1無機層上に前記第1樹脂材料を用いて第2樹脂層を形成する工程と、
を有する発光装置の製造方法である。
図4は、実施例1に係る発光装置10の構成を示す断面図である。本実施例に係る発光装置10は、基板100の構成を除いて実施形態に係る発光装置10と同様の構成である。
図5は、実施例2に係る発光装置10の構成を示す断面図である。本実施例に係る発光装置10は、封止部材300の代わりに封止膜302(封止部)を有している点を除いて、実施形態又は実施例1に係る発光装置10と同様の構成である。図5は、実施例1と同様の場合を示している。
図6は、実施例3に係る発光装置10の構成を示す断面図である。本実施例に係る発光装置10は、第1樹脂層110に複数の粒子112が導入されている点を除いて、実施形態又は実施例1,2のいずれかと同様の構成である。本図は、実施例1と同様の場合を示している。
図7は、実施例4に係る発光装置10の製造方法を説明するための断面図であり、実施形態における図3に対応している。本実施例に係る発光装置10の製造方法は、支持基板400のうち基板100を形成する面に微細な凹凸が形成されている点を除いて、実施形態又は実施例1~3のいずれかに係る発光装置10の製造方法と同様の構成である。そして、基板100の第1樹脂層110の第2面(光取り出し面)には微細な凹凸が形成される。この凹凸の高低差は、例えば50nm以上5μm以下であり、また隣り合う凸部の間隔は、例えば100nm以上200μm以下である。
Claims (10)
- 可撓性の基板と、
前記基板の第1面に形成された発光部と、
前記発光部を封止する封止部と、
を備え、
前記基板は、
第1樹脂材料を有する第1樹脂層と、
前記第1樹脂材料を有し、前記第1樹脂層よりも前記第1面側に位置する第2樹脂層と、
前記第1樹脂層と前記第2樹脂層の間に位置する第1無機層と、
を備える発光装置。 - 請求項1に記載の発光装置において、
前記第1樹脂層は前記第2樹脂層よりも薄い発光装置。 - 請求項2に記載の発光装置において、
前記第1樹脂材料はイミド結合を有している発光装置。 - 請求項2に記載の発光装置において、
前記第2樹脂層の第1面側に形成された第2無機層を備える発光装置。 - 請求項2に記載の発光装置において、
前記基板は、支持基板に前記第1樹脂層、前記第1無機層、及び前記第2樹脂層を成膜し、その後前記支持基板を除去することにより形成されている発光装置。 - 請求項5に記載の発光装置において、
前記第1樹脂層は複数の粒子を含有している発光装置。 - 請求項5に記載の発光装置において、
前記第2樹脂層よりも前記第1面側に設けられた第3樹脂層を備え、
前記第3樹脂層は、前記第1樹脂材料とは異なる第2樹脂材料によって形成されている発光装置。 - 支持基板上に基板を形成する工程と、
前記基板に発光部を形成する工程と、
前記基板に前記発光部を封止する封止部を形成する工程と、
を備え、
前記基板を形成する工程は、
前記支持基板上に第1樹脂材料を用いて第1樹脂層を形成する工程と、
前記第1樹脂層上に第1無機層を形成する工程と、
前記第1無機層上に前記第1樹脂材料を用いて第2樹脂層を形成する工程と、
を有する発光装置の製造方法。 - 請求項8に記載の発光装置の製造方法において、
前記基板から前記支持基板を取り除く工程を有する発光装置の製造方法。 - 請求項9に記載の発光装置の製造方法において、
前記第1樹脂層を形成する工程には、前記支持基板の凹凸を有する面上に前記第1樹脂層を形成する工程を有する発光装置の製造方法。
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US15/128,384 US9978987B2 (en) | 2014-03-24 | 2014-03-24 | Light emitting device and method of manufacturing a light emitting device |
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US20180241002A1 (en) | 2018-08-23 |
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US20170104178A1 (en) | 2017-04-13 |
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