WO2021017494A1 - 一种掩模组件以及一种显示装置 - Google Patents

一种掩模组件以及一种显示装置 Download PDF

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Publication number
WO2021017494A1
WO2021017494A1 PCT/CN2020/080836 CN2020080836W WO2021017494A1 WO 2021017494 A1 WO2021017494 A1 WO 2021017494A1 CN 2020080836 W CN2020080836 W CN 2020080836W WO 2021017494 A1 WO2021017494 A1 WO 2021017494A1
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WO
WIPO (PCT)
Prior art keywords
display area
thickness
electrode
bridge
display device
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Application number
PCT/CN2020/080836
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English (en)
French (fr)
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WO2021017494A8 (zh
Inventor
彭兆基
刘明星
甘帅燕
张志远
李伟丽
Original Assignee
昆山国显光电有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 昆山国显光电有限公司 filed Critical 昆山国显光电有限公司
Priority to EP20846269.7A priority Critical patent/EP3985142B1/en
Priority to JP2022502299A priority patent/JP2022541025A/ja
Priority to KR1020227000784A priority patent/KR20220019037A/ko
Publication of WO2021017494A1 publication Critical patent/WO2021017494A1/zh
Priority to US17/395,474 priority patent/US11957035B2/en
Publication of WO2021017494A8 publication Critical patent/WO2021017494A8/zh
Priority to JP2023122276A priority patent/JP2023159097A/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes

Definitions

  • This application relates to the field of display technology, in particular to a mask assembly and a display device.
  • the vapor deposition process is usually used to form the various film layers of the display panel, such as the gate layer, source and drain layers of thin film transistors, the light-emitting layer and cathode layer of organic light-emitting elements, as well as insulating layers and buffer layers. And other inorganic layers.
  • a mask is used to shield the area of the substrate to be vaporized that does not require vapor deposition to form a film layer with a specific pattern.
  • the display devices in the prior art need to dig out the openings for installing the corresponding devices in the display area, and the materials of some material layers are not easy to remove.
  • the opening part needs to be shielded before evaporation. Therefore, the mask for evaporation needs to be provided with a shielding part that covers the opening part, and the opening part is usually not set close to the edge of the display screen, which is usually a certain distance from the edge of the display screen. Therefore, the shielding part in the prior art is connected to the frame of the mask through a cantilever (support strip).
  • the presence of the cantilever causes the normal display area to be shielded during the evaporation process, so that the evaporation material cannot be formed. In the area covered by the cantilever, black lines are formed, which affects the normal display effect of the display screen.
  • the technical problem to be solved by this application is to overcome the defect that black lines are formed in the normal display area of the display panel in the prior art due to the use of the mask plate with the shielding part in the manufacturing process, thereby providing a mask.
  • Template and a display device are used to overcome the defect that black lines are formed in the normal display area of the display panel in the prior art due to the use of the mask plate with the shielding part in the manufacturing process, thereby providing a mask. Template and a display device.
  • the present application provides a mask assembly, which includes:
  • the mask frame is supported on the surface of the substrate, and an opening area is formed in the mask frame;
  • the island shielding part is connected to the mask frame or the adjacent island shielding part through the bridge, and the bridge does not contact the surface of the substrate.
  • the present application also provides a display device, which includes a display area and at least one non-display area, the display area being arranged around the non-display area;
  • the thickness of the first electrode is less than or equal to the thickness of the first electrode of the display area.
  • This application also provides a method for manufacturing the above-mentioned display device, including the following steps:
  • S1 Provide a base substrate, and sequentially fabricate an array circuit, an anode layer and a light-emitting layer on the base substrate;
  • the first cathode layer obtained in step S2 and the second cathode layer obtained in step S4 jointly constitute the cathode layer of the display device.
  • a mask assembly comprising: a mask frame supported on a surface of a substrate, and an opening area is formed in the mask frame; a plurality of isolated island shielding parts are located in the opening area, and the isolated island The shielding part is in contact with the surface of the substrate; and a bridge, the island shielding part is connected to the mask frame or an adjacent island shielding part through the bridge, and the bridge is not in contact with the substrate surface; specifically Preferably, the connecting bridge is suspended above the surface of the base to leave a gap between the connecting bridge and the surface of the base; further, the thickness of the connecting bridge is smaller than the thickness of the isolated island shielding portion.
  • the deposition layers on both sides of the bridges will be diffusely connected through the gap under the bridges when the vapor deposition material is deposited during the evaporation process, so that the thickness of the deposition layer under the bridges meets the basic requirements. That is, the vapor deposition material enters the gap between the bottom of the bridge and the substrate from both sides of the bridge, thereby connecting the vapor deposition material in the opening area on both sides of the bridge, thereby avoiding the area under the bridge due to the setting of the bridge It is not covered by the vapor deposition material and therefore requires secondary vapor deposition on the bridge-shaded area to ensure the integrity of the display.
  • the connecting bridge is in the shape of a straight bar; the straight line where the connecting bridge is located passes through the center of the isolated island shielding portion; and there are at least two connecting bridges.
  • the provision of two bridges can stably support the island shielding part in the mask frame, and each bridge passes through the center of the island shielding part, thereby further improving the support strength of the island shielding part.
  • the display device provided by the present application which includes a display area and at least one non-display area, the display area is arranged around the non-display area; and also includes a transition display area, the transition display area and the non-display area and The display areas are adjacent to each other, and both the display area and the transition display area are used to display static or dynamic pictures; the thickness of the first electrode of the transition display area is less than or equal to the thickness of the first electrode of the display area.
  • the existence of the transitional display area avoids incomplete display in the display device due to the incomplete coverage of the vapor deposition material, such as black border display in the area where the bridge is located, and improves the integrity of the display.
  • the manufacturing method of the display device provided by the present invention includes: S1: providing a base substrate, and sequentially fabricating and forming an array circuit, an anode layer and a light-emitting layer on the base substrate; S2: using a cathode material vapor deposition on the light-emitting layer to form the second A cathode layer; S3: etching to form a mounting hole in the non-display area; S4: using the mask assembly provided by the present invention to shield the area where the mounting hole is located, and using a cathode material vapor deposition to form a second cathode layer.
  • the two cathode layers cover the transition display area and the display area; wherein, the first cathode layer obtained in step S2 and the second cathode layer obtained in step S4 together constitute the cathode layer of the display device.
  • FIG. 1 is a schematic diagram of the structure of the mask assembly of this application.
  • Figure 2 is a cross-sectional view of A-A shown in Figure 1;
  • Figure 3 is a B-B sectional view shown in Figure 1;
  • 4-7 is a schematic diagram of the processing process of the display device of this application.
  • FIG. 8 is a schematic diagram of the structure of the display device of this application.
  • FIG. 9 is a cross-sectional view of the cathode layer of the display device C-C in FIG. 8;
  • Figure 10 is a schematic diagram of another mask assembly.
  • this embodiment records a mask assembly, specifically a mask plate 1 for vapor deposition, which includes a mask frame 11, a plurality of island shielding portions 12, and a bridge 13.
  • the isolated island shielding portion 12 is connected to the mask frame 11 or the adjacent island shielding portion 12 through the bridge 13.
  • the mask frame 11 is supported on the peripheral surface of the substrate, that is, the mask frame 11 is not used for shielding the vapor deposition material.
  • the mask frame 11 is formed with an opening area 14 that allows materials to enter and deposit, and the island shielding portion 12 is provided in the opening
  • the area 14 is used to shield the vapor deposition material to form a shielding area; wherein the substrate refers to the substrate to be vapor deposited, the mask frame 11 in this embodiment is a frame support plate, and an opening area is formed in the frame support plate 14 and a shielding area formed by the island shielding portion 12 and the bridge 13.
  • the island shielding portion 12 of this embodiment is located in the opening area 14 and surrounded by the opening area 14.
  • the island shielding portion 12 is in contact with the surface of the substrate; the island shielding portion 12 includes a circular shielding and/or a square Occlude.
  • an island shielding portion 12 forming a circular shield is provided in the opening area 14 in the mask frame 11.
  • the island shielding portion 12 is connected to the mask frame 11 by a bridge 13 and is connected by a bridge 13
  • the island shielding portion 12 is supported so that it can be suspended in the mask frame 11.
  • the isolated island shielding portion 12 is not limited to being set to be rectangular or circular, it may also be an ellipse, rhombus, hexagon, etc.; the mask frame 11 is not limited to being set as a box, and may be a round frame or an ellipse. Boxes, diamond-shaped boxes, hexagonal boxes and other shapes.
  • island shielding part 12 it is not limited to only one island shielding part 12, and two or more island shielding parts 12 can also be provided.
  • island shielding parts 12 or other shielding patterns are also provided in the box, several island shielding parts 12 They can be connected by a bridge 13; the island shielding part 12 can also be connected with other shielding patterns or other island shielding parts by a bridge 13.
  • FIG. 9 is a situation where two island shielding parts 12 are provided, and the two island shielding parts 12 are connected by a bridge 13, and one or two island shielding parts 12 are connected to the mask frame 11 through the bridge .
  • the connecting bridge 13 is a straight strip, and the straight line where the connecting bridge 13 is located passes through the center of the isolated island shielding portion 12.
  • the bridge 13 can be arranged along a straight line passing through the center of the circular island shielding portion 12; by setting the bridge 13 to pass through the center of the island shielding portion, it can improve The supporting strength of the connecting bridge 13 to the shielding part of the isolated island.
  • the two bridges are arranged on the periphery of the island shielding portion 12 in different directions to connect the island shielding portion 12 to different parts of the mask frame 11.
  • This embodiment In the example, the two bridges are arranged at an angle of 90° to each other.
  • the angle between the two bridges 13 is not limited to being set at 90° to each other.
  • Setting two bridges can stably support the island shielding portion 12 in the mask frame.
  • the number of bridges 13 can also be provided in multiple, and each bridge 13 passes through the center of the island shielding portion 12, thereby further improving the The support strength of the island shielding portion 12.
  • the thickness of the bridge 13 is less than the thickness of the island shielding portion 12, and the thickness of the bridge 13 is also less than The thickness of the mask frame 11, that is, the bridge 13 is suspended on the substrate.
  • the width L of the bridge 13 satisfies 0.1mm ⁇ L ⁇ 0.5mm.
  • the deposition layers on both sides of the bridge 13 will be diffused and connected together through the gap under the bridge 13, so that the thickness of the deposition layer under the bridge 13 meets the basic requirements, that is, the deposition material from the bridge 13 Both sides enter the gap between the bottom and the substrate, thereby connecting the evaporation material located in the opening areas on both sides of the bridge, thereby avoiding the area under the bridge being not covered by the evaporation material due to the provision of the bridge. Therefore, in order to ensure the integrity of the display, it is necessary to perform a second vapor deposition on the area covered by the bridge.
  • this embodiment describes a display device including a display area 3, at least one non-display area 4, and a transition display area 5, wherein the display area 3 is arranged around the non-display area 4;
  • the transition display area 5 is adjacent to the non-display area 4 and the display area 3 respectively, wherein the transition display area 5 connects the edges of the non-display area 4 and the display area 3.
  • the transition display area 5 can also connect two adjacent non-display areas 4.
  • the thickness of the first electrode of the transition display area 5 is less than or equal to the thickness of the first electrode of the display area 3, and the first electrode of the display area 3 and the first electrode of the transition display area 5 The electrodes are connected to form a surface electrode.
  • the display area 3 and the transition display area 5 both include: a substrate 6, an array circuit 10, an anode layer 8, an OLED light-emitting layer 7, and a cathode layer 9 stacked on the substrate 6 in sequence; that is, the display Area 3 and the transition display area 5 are both used to display static or dynamic pictures, the difference is that the thickness of the first electrode of the transition display area 5 is less than or equal to the thickness of the first electrode layer of the display area, this embodiment
  • the first electrode in the transition display area 5 has a thickness difference, wherein the thickness of the first electrode located at the edge of the transition display area 5 is greater than the thickness of the first electrode located in the middle part of the transition display area 5, for example The thickness of the first electrode at the connecting portion of the transition display area 5 and the display area 3 is greater than the thickness of the first electrode located in the middle portion of the transition display area 5, and the edge thickness of the first electrode of the transition display area 5 is less than or equal to The thickness of the first electrode in zone 3.
  • the first electrode in this embodiment is a cathode, that is, the thickness of the cathode layer 9 in the transition display area 5 is less than or equal to the thickness of the cathode layer in the display area 3, and the cathode layer 9 in the transition display area 5 There is a difference in thickness.
  • the thickness of the second electrode of the transition display area 5, for example, the anode layer can also be set to be less than or equal to the thickness of the anode layer of the display area 3, and there is a thickness difference.
  • the transition display area 5 in this embodiment is elongated, and the thickness of the cathode layer at the connecting portion of the transition display area 5 and the display area 3 is greater than that in the middle of the transition display area 5. Part of the cathode layer thickness.
  • the cathode layer 9 of the strip-shaped transition display area 5 has a thickness difference in the width direction of the transition display area 5 (the width direction refers to the direction parallel to the shorter side of the transition display area).
  • the existence of the transitional display area avoids incomplete display in the display device due to the incomplete coverage of the vapor deposition material, such as black border display in the area where the bridge is located, and improves the integrity of the display.
  • the cathode layer 9 in the second embodiment is formed by evaporation using the mask assembly in the first embodiment.
  • the display area 3 corresponds to the opening area 14 on the mask assembly, that is, the vapor deposition material is deposited on the light-emitting layer 7 through the opening area 14 of the mask assembly to form the cathode layer 9 as shown in FIG. 7 and the non-display area 4
  • the transition display area 5 corresponds to the area covered by the bridge 13 on the mask assembly.
  • the cathode evaporation material can be diffused and connected together through the gap under the bridge 13 when the cathode material is deposited, so that the deposition layer under the bridge 13 can still be attached, so that the evaporation material is from both sides of the bridge 13 Enter the gap between the lower part and the light-emitting layer 7, thereby connecting the vapor deposition material in the opening areas 14 on both sides of the bridge, thereby avoiding the provision of the bridge 13 that the area under the bridge 13 is not vaporized material cover.
  • the cross section of the cathode layer of the transition display area 5 along its width direction is shown.
  • the surface of the cathode layer 9 of the transition display area 5 is a concave cylindrical surface, and the two ends of the cylindrical surface correspond to the transition display area.
  • the display areas 3 on both sides of the width direction of the area 5 are connected, and the depressed area in the middle of the transition display area 5 corresponds to the bridge 13 of the mask assembly forming the cathode layer.
  • the cathode layer 9 of the transition display area 5 is recessed toward the direction of the substrate 6, wherein the thickness of the part connecting the display area 3 on both sides of the recess is greater than the thickness of the middle part of the recess, that is, the left and right sides in FIG.
  • the thickness of is greater than the thickness of the middle part of the recess.
  • the thickness of the cathode layer of the transition display area 5 is h
  • the thickness of the cathode layer of the display area 3 is H, so that: 50nm ⁇ h ⁇ H, and 100nm ⁇ H ⁇ 180nm.
  • the display device of this embodiment also includes a device unit, wherein the device unit includes a mounting hole 2 dug in the non-display area 4 and a functional element provided in the mounting hole 2, and the functional element includes a photosensitive element, a camera, Any one or more of earpiece, light sensor, and light emitter.
  • a base substrate 6 is provided, and an array circuit 10, an anode layer 8 and an OLED light-emitting layer 7 are sequentially fabricated on the base substrate 6;
  • the first cathode layer 91 is formed by evaporation of the cathode layer material on the light-emitting layer 7, wherein the thickness of the first cathode layer 91 is less than the minimum value of h, that is, the thickness of the first cathode layer 91 is less than the transition The minimum thickness of the cathode layer in the display area 5;
  • a mounting hole 2 is formed by etching in the non-display area 4;
  • the mask assembly as in Example 1 is used to shield the area where the mounting hole 2 is located, and the second cathode layer 92 is formed by evaporation of a cathode material, wherein the second cathode layer 92 covers the transition Display area 5 and display area 3;
  • the first cathode layer 91 in step S2 and the second cathode layer 92 in step S4 jointly constitute the cathode layer 9 of the display device.
  • the cathode layer By using two steps to form the cathode layer, it can be ensured that there is at least the first cathode layer 91 in the transition display area 5, that is, it can be ensured that the transition display area 5 is conductive.
  • the thickness of the cathode layer 9 of the transition display area 5 is uneven. Affect the normal display, ensure the brightness uniformity and normal display of the transition display area 5.
  • the external drive circuit can be used to perform external optical compensation for the transition display area display module, such as the optical extraction type Demura optical compensation to improve the overall display device The uniformity of brightness prevents afterimages.

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Abstract

本申请提供的一种掩模组件和显示装置，其中显示装置包括显示区和至少一个非显示区，所述显示区围绕所述非显示区设置；还包括过渡显示区，所述过渡显示区与所述非显示区和所述显示区分别邻接，所述显示区和所述过渡显示区均用于显示静态或动态画面；所述过渡显示区的第一电极的厚度小于等于所述显示区的第一电极的厚度。由于过渡显示区的存在避免了显示装置中的因蒸镀材料未全面覆盖而导致的不完整显示，例如连桥所在区域形成黑边显示等，提高了显示的完整性。

Description

一种掩模组件以及一种显示装置 技术领域
本申请涉及显示技术领域，具体涉及一种掩模组件以及一种显示装置。
背景技术
在显示面板的制作工艺中，通常采用蒸镀工艺形成显示面板的各个膜层，如薄膜晶体管的栅极层、源漏极层，有机发光元件的发光层、阴极层，以及绝缘层、缓冲层等无机层。当在待蒸镀基板上形成某一膜层时，利用一张掩膜板对待蒸镀基板中不需要蒸镀的区域进行遮挡，以形成具有特定图案的膜层。
现有技术中的显示装置为了预留其他电子器件，例如摄像头、扬声器、话筒等的安装空间，需要在显示区域挖设安装相应器件的开口部分，而部分材料层的材料不容易去除，因此在蒸镀前需要对开口部分进行遮挡，因此蒸镀用的掩膜中需要设置包括遮挡开口部分的遮挡部，而通常开口部分并不紧挨着显示屏边缘设置，其通常距离显示屏边缘一定的距离，因此，现有技术中的遮挡部通过悬臂(支撑条)连接至掩模的边框，由于悬臂的存在导致了在蒸镀过程中对正常显示区造成的遮挡，从而使蒸镀材料无法成形在悬臂遮挡的区域，形成黑色线条，影响了显示屏的正常显示效果。
发明内容
因此，本申请要解决的技术问题在于克服现有技术中的显示面板由于其制作工艺中对带有遮挡部的掩膜板的使用而在正常显示区形成黑色线条的缺陷，从而提供一种掩模板以及一种显示装置。
为此，本申请的技术方案如下：
本申请提供了一种掩模组件，其包括：
掩模边框，支撑于基底表面，所述掩模边框内形成开口区；
若干孤岛遮挡部，位于所述开口区内，所述孤岛遮挡部与所述基底表面接触；
以及连桥，所述孤岛遮挡部通过所述连桥与所述掩模边框或相邻孤岛 遮挡部连接，所述连桥不与所述基底表面接触。
本申请还提供了一种显示装置，其包括显示区和至少一个非显示区，所述显示区围绕所述非显示区设置；
还包括过渡显示区，所述过渡显示区与所述非显示区和所述显示区分别邻接，所述显示区和所述过渡显示区均用于显示静态或动态画面；所述过渡显示区的第一电极的厚度小于等于所述显示区的第一电极的厚度。
本申请还提供了一种制作上述显示装置的方法，包括以下步骤：
S1：提供衬底基板，在衬底基板上依次制作形成阵列电路、阳极层和发光层；
S2：在发光层上采用阴极材料蒸镀形成第一阴极层；
S3：在非显示区刻蚀形成安装孔；
S4：采用上述掩模组件，对安装孔所在区域进行遮挡，并采用阴极材料蒸镀形成第二阴极层，其中第二阴极层覆盖过渡显示区和显示区；
其中，步骤S2中得到的所述第一阴极层和步骤S4中得到的所述第二阴极层共同构成显示装置的阴极层。
本申请技术方案，具有如下优点：
1.本申请提供的一种掩模组件，其包括：掩模边框，支撑于基底表面，所述掩模边框内形成开口区；若干孤岛遮挡部，位于所述开口区内，所述孤岛遮挡部与所述基底表面接触；以及连桥，所述孤岛遮挡部通过所述连桥与所述掩模边框或相邻孤岛遮挡部连接，所述连桥不与所述基底表面接触；具体地，所述连桥悬空架设于所述基底表面上方，以在所述连桥与所述基底表面之间留有空隙；进一步地，所述连桥的厚度小于所述孤岛遮挡部的厚度。通过将连桥架空设置，在蒸镀过程中蒸镀材料沉积时连桥的两侧的沉积层会通过连桥下方的间隙扩散连接到一起，使得连桥下方的沉积层的厚度满足基本要求，即蒸镀材料从连桥两侧进入其下方与基底之间的空隙，由此连通位于连桥两侧开口区内的蒸镀材料，由此避免了因设置有连桥而使得连桥下方区域未被蒸镀材料覆盖并因此导致为确保显示的完整性而需要对连桥遮蔽区域进行二次蒸镀。
2.本申请提供的掩模组件，所述连桥为直条形；所述连桥所在直线经 过所述孤岛遮挡部的中心；所述连桥设置有至少两个。设置两个连桥能够稳固的将孤岛遮挡部支撑于掩模边框内，每个连桥均经过孤岛遮挡部的中心，由此进一步提高对孤岛遮挡部的支撑强度。
3.本申请提供的显示装置，其包括显示区和至少一个非显示区，所述显示区围绕所述非显示区设置；还包括过渡显示区，所述过渡显示区与所述非显示区和所述显示区分别邻接，所述显示区和所述过渡显示区均用于显示静态或动态画面；所述过渡显示区的第一电极的厚度小于等于所述显示区的第一电极的厚度。由于过渡显示区的存在避免了显示装置中的因蒸镀材料未全面覆盖而导致的不完整显示，例如连桥所在区域形成黑边显示等，提高了显示的完整性。
4.本发明提供的显示装置的制作方法包括：S1：提供衬底基板，在衬底基板上依次制作形成阵列电路、阳极层和发光层；S2：在发光层上采用阴极材料蒸镀形成第一阴极层；S3：在非显示区刻蚀形成安装孔；S4：采用本发明提供的掩模组件，对安装孔所在区域进行遮挡，并采用阴极材料蒸镀形成第二阴极层，其中第二阴极层覆盖过渡显示区和显示区；其中，步骤S2中得到的所述第一阴极层和步骤S4中得到的所述第二阴极层共同构成显示装置的阴极层。通过采用S2、S4两个步骤共同形成阴极层，可确保过渡显示区至少存在第一阴极层，即确保过渡显示区是导通的，从而确保了所制作的显示装置的正常显示。
附图说明
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请的掩模组件的结构示意图；
图2为图1所示的A-A剖视图；
图3为图1所示的B-B剖视图；
图4-7为本申请显示装置的加工过程示意图；
图8为本申请的显示装置的结构示意图；
图9为图8中显示装置C-C阴极层的剖示图；
图10为另一个掩模组件的结构示意图。
具体实施方式
下面将结合附图对本申请的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
实施例1
如图1所示，本实施例记载了一种掩模组件，具体为一种用于蒸镀的掩模板1，其包括掩模边框11、若干孤岛遮挡部12和连桥13，所述孤岛遮挡部12通过所述连桥13与所述掩模边框11或相邻孤岛遮挡部12连接。其中掩模边框11支撑于基底的周边表面，即掩模边框11不用于进行蒸镀材料的遮挡，掩模边框11内形成有允许材料进入并沉积的开口区14，孤岛遮挡部12设于开口区14内用于遮挡蒸镀材料形成遮挡区；其中基底指待被蒸镀的基材，本实施例中的所述掩模边框11为方框支撑板，方框支撑板内形成有开口区14和由孤岛遮挡部12与连桥13构成的遮挡区。
本实施例的孤岛遮挡部12位于所述开口区14内且被开口区14围绕设置，所述孤岛遮挡部12与所述基底表面接触；所述孤岛遮挡部12包括圆形遮挡和/或方形遮挡。本实施例中设有一个形成圆形遮挡的孤岛遮挡部12，其设置于掩模边框11内的开口区14中，孤岛遮挡部12通过连桥13与掩模边框11连接，通过连桥13支撑孤岛遮挡部12使其能够悬设于掩模边框11内。当然，孤岛遮挡部12不限于仅设置为矩形或者圆形，其也可以为椭圆形、菱形、六边形等形状；掩模边框11也不限于设置为方框，可以为圆框、椭圆形框、菱形框、六边形框等形状。
当然，也不限于只设有一个孤岛遮挡部12，也可设置有两个或多个孤岛遮挡部12，当方框中还设有其他孤岛遮挡部12或者其他遮挡图形时，若干孤岛遮挡部12之间可通过连桥13连接；孤岛遮挡部12也可通过连桥13与其他遮挡图形或者其他孤岛遮挡部连接。如图9所示为设置有两个孤岛遮挡部12的情形，两个孤岛遮挡部12之间通过一个连桥13连接， 其中一个或者两个孤岛遮挡部12通过连桥与掩模边框11连接。
本实施例中的所述连桥13为直条形，且所述连桥13所在直线经过所述孤岛遮挡部12的中心。其中由于本实施例中的孤岛遮挡部12为圆形，因此连桥13可沿经过圆形孤岛遮挡部12圆心所在直线布置；通过将连桥13设置为经过孤岛遮挡部的中心布置，可提高连桥13对孤岛遮挡部的支撑强度。
参见附图1，本实施例中的所述连桥设置有两个，其沿不同方向设置于孤岛遮挡部12的周边，以将孤岛遮挡部12连接至掩模边框11的不同部位，本实施例中的两个连桥互呈90°夹角布置，当然，两个连桥13之间的夹角不限于设置为互呈90°。设置两个连桥能够稳固的将孤岛遮挡部12支撑于掩模边框内，当然连桥13也可以设置为多个，每个连桥13均经过孤岛遮挡部12的中心，由此进一步提高对孤岛遮挡部12的支撑强度。
参见附图2-3，其中所述连桥13不与所述基底表面接触；本实施例中所述连桥13的厚度小于所述孤岛遮挡部12的厚度，同时连桥13的厚度也小于掩模边框11的厚度，即连桥13为悬空架设于基底上的，本实施例中连桥13的宽度L满足0.1mm≤L≤0.5mm，通过将连桥13架空设置，在蒸镀过程中蒸镀材料沉积时连桥13的两侧的沉积层会通过连桥13下方的间隙扩散连接到一起，使得连桥13下方的沉积层的厚度满足基本要求，即蒸镀材料从连桥13两侧进入其下方与基底之间的空隙，由此连通位于连桥两侧开口区内的蒸镀材料，由此避免了因设置有连桥而使得连桥下方区域未被蒸镀材料覆盖并因此导致为确保显示的完整性而需要对连桥遮蔽区域进行二次蒸镀。
实施例2
参见附图7-8，本实施例记载了一种显示装置，其包括显示区3、至少一个非显示区4和过渡显示区5，其中所述显示区3围绕所述非显示区4设置；所述过渡显示区5与所述非显示区4和所述显示区3分别邻接，其中所述过渡显示区5连接所述非显示区4与所述显示区3的边缘。当非显示区4设置不止一个时，过渡显示区5也可连接相邻的两个所述非显示区4。
本实施例中所述过渡显示区5的第一电极的厚度小于等于所述显示区 3的第一电极的厚度，且所述显示区3的第一电极与所述过渡显示区5的第一电极连接形成面电极。
其中所述显示区3和所述过渡显示区5均包括：基板6、依次堆叠设于所述基板6上的阵列电路10、阳极层8、OLED发光层7和阴极层9；即所述显示区3和所述过渡显示区5均用于显示静态或动态画面，不同之处在于所述过渡显示区5的第一电极的厚度小于等于所述显示区的第一电极层的厚度，本实施例的所述过渡显示区5内的第一电极存在厚度差，其中位于所述过渡显示区5边缘的第一电极的厚度大于位于所述过渡显示区5中间部分的第一电极的厚度，例如过渡显示区5与所述显示区3连接部分的第一电极的厚度大于位于所述过渡显示区5中间部分的第一电极的厚度，过渡显示区5的第一电极的边缘厚度小于或者等于显示区3的第一电极的厚度。如图7-8所示，其中本实施例中的第一电极为阴极，即过渡显示区5阴极层9的厚度小于等于显示区3阴极层的厚度，且过渡显示区5内的阴极层9存在厚度差。当然过渡显示区5的第二电极，例如阳极层的厚度同样也可设置为小于等于显示区3阳极层的厚度，且存在厚度差。
如图7-8所示，其中本实施例中所述过渡显示区5为长条状，所述过渡显示区5与所述显示区3连接部分的阴极层厚度大于所述过渡显示区5中间部分的阴极层厚度。如图9所示为所述条状过渡显示区5的阴极层9在过渡显示区5的宽度方向(宽度方向指平行于过渡显示区长度较短的一边方向)存在厚度差。由于过渡显示区的存在避免了显示装置中的因蒸镀材料未全面覆盖而导致的不完整显示，例如连桥所在区域形成黑边显示等，提高了显示的完整性。
其中本实施例2中的阴极层9通过采用实施例1中的掩模组件蒸镀成型。其中显示区3对应于掩模组件上的开口区14，即蒸镀材料通过掩模组件的开口区14沉积于发光层7上形成如图7所示的阴极层9，非显示区4对应于掩模组件上的孤岛遮挡部12覆盖的区域，过渡显示区5对应于掩模组件上的连桥13覆盖的区域，由于本申请中的连桥13底部不与基材接触，即在阴极材料蒸镀过程中，阴极蒸镀材料沉积时可通过连桥13下方的空隙扩散连接到一起，使得连桥13下方的仍能够附着沉积层，使得蒸镀材料从连桥13两侧进入其下方与发光层7之间的空隙，由此连通位于连桥两侧开口区14内的蒸镀材料，由此避免因设置有连桥13而使得连桥13下 方区域未被蒸镀材料覆盖。
如图9所示，为所述过渡显示区5沿其宽度方向的阴极层的截面显示，过渡显示区5的阴极层9的表面呈下凹的柱面，柱面的两端对应与过渡显示区5宽度方向两侧的显示区3连接，过渡显示区5中部下凹区域与形成阴极层的掩膜组件的连桥13对应。
所述过渡显示区5的阴极层9向靠近基板6方向凹陷，其中所述凹陷两侧与所述显示区3连接部分的厚度大于所述凹陷中间部分的厚度，即图9中左右两侧边的厚度大于凹陷中间部位的厚度。具体地，所述过渡显示区5的阴极层的厚度为h，所述显示区3的阴极层的厚度为H，则满足：50nm≤h≤H，同时100nm≤H≤180nm。
本实施例的显示装置还包括器件单元，其中器件单元包括挖设于非显示区4内的安装孔2和设于所述安装孔2中的功能元件，所述功能元件包括感光元件、摄像头、听筒、光线感应器、光线发射器中的任意一种或几种。
本实施例中的显示装置的制作过程为：
S1：如图4所示，提供衬底基板6，在衬底基板6上依次制作形成阵列电路10、阳极层8和OLED发光层7；
S2：如图5所示，在发光层7上采用阴极层材料蒸镀形成第一阴极层91，其中第一阴极层91的厚度小于h的最小值，即第一阴极层91的厚度小于过渡显示区5的阴极层的最小厚度；
S3：如图6所示，在非显示区4刻蚀形成安装孔2；
S4：如图7所示，采用如实施例1中的掩模组件，对安装孔2所在区域进行遮挡，并采用阴极材料蒸镀形成第二阴极层92，其中第二阴极层92覆盖过渡显示区5和显示区3；
其中步骤S2中的第一阴极层91和步骤S4中的第二阴极层92共同构成显示装置的阴极层9。
通过采用两个步骤形成阴极层，可确保过渡显示区5至少存在第一阴极层91，即确保过渡显示区5是导通的，其中由于过渡显示区5的阴极层9厚度不均，为避免对正常显示造成影响，确保过渡显示区5的亮度均匀 性以及正常显示，后期可通过外部的驱动电路对过渡显示区显示模组进行外部光学补偿，例如光学抽取式Demura光学补偿以提高显示装置整体亮度的均匀性，避免产生残像。

Claims (18)

  1. 一种掩模组件，包括：
    掩模边框，支撑于基底表面，所述掩模边框内形成开口区；
    若干孤岛遮挡部，位于所述开口区内，所述孤岛遮挡部与所述基底表面接触；以及
    连桥，所述孤岛遮挡部通过所述连桥与所述掩模边框或相邻孤岛遮挡部连接，所述连桥不与所述基底表面接触。
  2. 根据权利要求1所述的掩模组件，其中，所述连桥悬空架设于所述基底表面上方，以在所述连桥与所述基底表面之间留有空隙。
  3. 根据权利要求1所述的掩模组件，其中，所述孤岛遮挡部包括圆形遮挡板和/或方形遮挡板。
  4. 根据权利要求3所述的掩模组件，其中，所述连桥的厚度小于所述孤岛遮挡部的厚度。
  5. 根据权利要求4所述的掩模组件，其中，所述连桥为直条形。
  6. 根据权利要求4所述的掩模组件，其中，所述连桥所在直线经过所述孤岛遮挡部的中心。
  7. 根据权利要求1至6中任一项所述的掩模组件，其中，所述连桥设置有至少两个。
  8. 一种显示装置，其包括显示区和至少一个非显示区，所述显示区围绕所述非显示区设置；
    还包括过渡显示区，所述过渡显示区与所述非显示区和所述显示区分别邻接，所述显示区和所述过渡显示区均用于显示静态或动态画面；所述过渡显示区的第一电极的厚度小于等于所述显示区的第一电极的厚度。
  9. 根据权利要求8所述的显示装置，其中，所述显示区的第一电极与所述过渡显示区的第一电极连接形成面电极。
  10. 根据权利要求8所述的显示装置，其中，所述过渡显示区的第一电极存在厚度差。
  11. 根据权利要求10所述的显示装置，其中，所述过渡显示区边缘的第一电极的厚度大于所述过渡显示区中间部分的第一电极的厚度。
  12. 根据权利要求8所述的显示装置，其中，所述过渡显示区的第一电极的厚度h≥50nm，所述显示区的第一电极的厚度为100nm≤H≤180nm。
  13. 根据权利要求8所述的显示装置，其中，所述过渡显示区的第二电极的厚度小于等于所述显示区的第二电极的厚度。
  14. 根据权利要求13所述的显示装置，其中，所述过渡显示区的第二电极存在厚度差。
  15. 根据权利要求14所述的显示装置，其中，所述过渡显示区边缘的第二电极的厚度大于所述过渡显示区中间部分的第二电极的厚度。
  16. 根据权利要求8至15中任一项所述的显示装置，还包括器件单元，所述器件单元包括挖设于所述非显示区内的安装孔和设于所述安装孔中的功能元件，所述功能元件包括感光元件、摄像头、听筒中的任意一种或几种。
  17. 一种制作显示装置的方法，所述显示装置为权利要求8-16中任一项所述的显示装置，包括以下步骤：
    S1：提供衬底基板，在衬底基板上依次制作形成阵列电路、阳极层和发光层；
    S2：在发光层上采用阴极材料蒸镀形成第一阴极层；
    S3：在非显示区刻蚀形成安装孔；
    S4：采用权利要求1-7中任一项所述的掩模组件，对安装孔所在区域进行遮挡，并采用阴极材料蒸镀形成第二阴极层，其中第二阴极层覆盖过渡显示区和显示区；
    其中，步骤S2中得到的所述第一阴极层和步骤S4中得到的所述第二阴极层共同构成显示装置的阴极层。
  18. 根据权利要求17所述的方法，其中，步骤S2中得到的所述第一阴极层的厚度≤50nm。
PCT/CN2020/080836 2019-07-31 2020-03-24 一种掩模组件以及一种显示装置 WO2021017494A1 (zh)

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