WO2021017494A1 - 一种掩模组件以及一种显示装置 - Google Patents
一种掩模组件以及一种显示装置 Download PDFInfo
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- WO2021017494A1 WO2021017494A1 PCT/CN2020/080836 CN2020080836W WO2021017494A1 WO 2021017494 A1 WO2021017494 A1 WO 2021017494A1 CN 2020080836 W CN2020080836 W CN 2020080836W WO 2021017494 A1 WO2021017494 A1 WO 2021017494A1
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- 230000007704 transition Effects 0.000 claims abstract description 61
- 230000008020 evaporation Effects 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims abstract description 17
- 230000003068 static effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 33
- 238000007740 vapor deposition Methods 0.000 claims description 18
- 239000010406 cathode material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 22
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Definitions
- This application relates to the field of display technology, in particular to a mask assembly and a display device.
- the vapor deposition process is usually used to form the various film layers of the display panel, such as the gate layer, source and drain layers of thin film transistors, the light-emitting layer and cathode layer of organic light-emitting elements, as well as insulating layers and buffer layers. And other inorganic layers.
- a mask is used to shield the area of the substrate to be vaporized that does not require vapor deposition to form a film layer with a specific pattern.
- the display devices in the prior art need to dig out the openings for installing the corresponding devices in the display area, and the materials of some material layers are not easy to remove.
- the opening part needs to be shielded before evaporation. Therefore, the mask for evaporation needs to be provided with a shielding part that covers the opening part, and the opening part is usually not set close to the edge of the display screen, which is usually a certain distance from the edge of the display screen. Therefore, the shielding part in the prior art is connected to the frame of the mask through a cantilever (support strip).
- the presence of the cantilever causes the normal display area to be shielded during the evaporation process, so that the evaporation material cannot be formed. In the area covered by the cantilever, black lines are formed, which affects the normal display effect of the display screen.
- the technical problem to be solved by this application is to overcome the defect that black lines are formed in the normal display area of the display panel in the prior art due to the use of the mask plate with the shielding part in the manufacturing process, thereby providing a mask.
- Template and a display device are used to overcome the defect that black lines are formed in the normal display area of the display panel in the prior art due to the use of the mask plate with the shielding part in the manufacturing process, thereby providing a mask. Template and a display device.
- the present application provides a mask assembly, which includes:
- the mask frame is supported on the surface of the substrate, and an opening area is formed in the mask frame;
- the island shielding part is connected to the mask frame or the adjacent island shielding part through the bridge, and the bridge does not contact the surface of the substrate.
- the present application also provides a display device, which includes a display area and at least one non-display area, the display area being arranged around the non-display area;
- the thickness of the first electrode is less than or equal to the thickness of the first electrode of the display area.
- This application also provides a method for manufacturing the above-mentioned display device, including the following steps:
- S1 Provide a base substrate, and sequentially fabricate an array circuit, an anode layer and a light-emitting layer on the base substrate;
- the first cathode layer obtained in step S2 and the second cathode layer obtained in step S4 jointly constitute the cathode layer of the display device.
- a mask assembly comprising: a mask frame supported on a surface of a substrate, and an opening area is formed in the mask frame; a plurality of isolated island shielding parts are located in the opening area, and the isolated island The shielding part is in contact with the surface of the substrate; and a bridge, the island shielding part is connected to the mask frame or an adjacent island shielding part through the bridge, and the bridge is not in contact with the substrate surface; specifically Preferably, the connecting bridge is suspended above the surface of the base to leave a gap between the connecting bridge and the surface of the base; further, the thickness of the connecting bridge is smaller than the thickness of the isolated island shielding portion.
- the deposition layers on both sides of the bridges will be diffusely connected through the gap under the bridges when the vapor deposition material is deposited during the evaporation process, so that the thickness of the deposition layer under the bridges meets the basic requirements. That is, the vapor deposition material enters the gap between the bottom of the bridge and the substrate from both sides of the bridge, thereby connecting the vapor deposition material in the opening area on both sides of the bridge, thereby avoiding the area under the bridge due to the setting of the bridge It is not covered by the vapor deposition material and therefore requires secondary vapor deposition on the bridge-shaded area to ensure the integrity of the display.
- the connecting bridge is in the shape of a straight bar; the straight line where the connecting bridge is located passes through the center of the isolated island shielding portion; and there are at least two connecting bridges.
- the provision of two bridges can stably support the island shielding part in the mask frame, and each bridge passes through the center of the island shielding part, thereby further improving the support strength of the island shielding part.
- the display device provided by the present application which includes a display area and at least one non-display area, the display area is arranged around the non-display area; and also includes a transition display area, the transition display area and the non-display area and The display areas are adjacent to each other, and both the display area and the transition display area are used to display static or dynamic pictures; the thickness of the first electrode of the transition display area is less than or equal to the thickness of the first electrode of the display area.
- the existence of the transitional display area avoids incomplete display in the display device due to the incomplete coverage of the vapor deposition material, such as black border display in the area where the bridge is located, and improves the integrity of the display.
- the manufacturing method of the display device provided by the present invention includes: S1: providing a base substrate, and sequentially fabricating and forming an array circuit, an anode layer and a light-emitting layer on the base substrate; S2: using a cathode material vapor deposition on the light-emitting layer to form the second A cathode layer; S3: etching to form a mounting hole in the non-display area; S4: using the mask assembly provided by the present invention to shield the area where the mounting hole is located, and using a cathode material vapor deposition to form a second cathode layer.
- the two cathode layers cover the transition display area and the display area; wherein, the first cathode layer obtained in step S2 and the second cathode layer obtained in step S4 together constitute the cathode layer of the display device.
- FIG. 1 is a schematic diagram of the structure of the mask assembly of this application.
- Figure 2 is a cross-sectional view of A-A shown in Figure 1;
- Figure 3 is a B-B sectional view shown in Figure 1;
- 4-7 is a schematic diagram of the processing process of the display device of this application.
- FIG. 8 is a schematic diagram of the structure of the display device of this application.
- FIG. 9 is a cross-sectional view of the cathode layer of the display device C-C in FIG. 8;
- Figure 10 is a schematic diagram of another mask assembly.
- this embodiment records a mask assembly, specifically a mask plate 1 for vapor deposition, which includes a mask frame 11, a plurality of island shielding portions 12, and a bridge 13.
- the isolated island shielding portion 12 is connected to the mask frame 11 or the adjacent island shielding portion 12 through the bridge 13.
- the mask frame 11 is supported on the peripheral surface of the substrate, that is, the mask frame 11 is not used for shielding the vapor deposition material.
- the mask frame 11 is formed with an opening area 14 that allows materials to enter and deposit, and the island shielding portion 12 is provided in the opening
- the area 14 is used to shield the vapor deposition material to form a shielding area; wherein the substrate refers to the substrate to be vapor deposited, the mask frame 11 in this embodiment is a frame support plate, and an opening area is formed in the frame support plate 14 and a shielding area formed by the island shielding portion 12 and the bridge 13.
- the island shielding portion 12 of this embodiment is located in the opening area 14 and surrounded by the opening area 14.
- the island shielding portion 12 is in contact with the surface of the substrate; the island shielding portion 12 includes a circular shielding and/or a square Occlude.
- an island shielding portion 12 forming a circular shield is provided in the opening area 14 in the mask frame 11.
- the island shielding portion 12 is connected to the mask frame 11 by a bridge 13 and is connected by a bridge 13
- the island shielding portion 12 is supported so that it can be suspended in the mask frame 11.
- the isolated island shielding portion 12 is not limited to being set to be rectangular or circular, it may also be an ellipse, rhombus, hexagon, etc.; the mask frame 11 is not limited to being set as a box, and may be a round frame or an ellipse. Boxes, diamond-shaped boxes, hexagonal boxes and other shapes.
- island shielding part 12 it is not limited to only one island shielding part 12, and two or more island shielding parts 12 can also be provided.
- island shielding parts 12 or other shielding patterns are also provided in the box, several island shielding parts 12 They can be connected by a bridge 13; the island shielding part 12 can also be connected with other shielding patterns or other island shielding parts by a bridge 13.
- FIG. 9 is a situation where two island shielding parts 12 are provided, and the two island shielding parts 12 are connected by a bridge 13, and one or two island shielding parts 12 are connected to the mask frame 11 through the bridge .
- the connecting bridge 13 is a straight strip, and the straight line where the connecting bridge 13 is located passes through the center of the isolated island shielding portion 12.
- the bridge 13 can be arranged along a straight line passing through the center of the circular island shielding portion 12; by setting the bridge 13 to pass through the center of the island shielding portion, it can improve The supporting strength of the connecting bridge 13 to the shielding part of the isolated island.
- the two bridges are arranged on the periphery of the island shielding portion 12 in different directions to connect the island shielding portion 12 to different parts of the mask frame 11.
- This embodiment In the example, the two bridges are arranged at an angle of 90° to each other.
- the angle between the two bridges 13 is not limited to being set at 90° to each other.
- Setting two bridges can stably support the island shielding portion 12 in the mask frame.
- the number of bridges 13 can also be provided in multiple, and each bridge 13 passes through the center of the island shielding portion 12, thereby further improving the The support strength of the island shielding portion 12.
- the thickness of the bridge 13 is less than the thickness of the island shielding portion 12, and the thickness of the bridge 13 is also less than The thickness of the mask frame 11, that is, the bridge 13 is suspended on the substrate.
- the width L of the bridge 13 satisfies 0.1mm ⁇ L ⁇ 0.5mm.
- the deposition layers on both sides of the bridge 13 will be diffused and connected together through the gap under the bridge 13, so that the thickness of the deposition layer under the bridge 13 meets the basic requirements, that is, the deposition material from the bridge 13 Both sides enter the gap between the bottom and the substrate, thereby connecting the evaporation material located in the opening areas on both sides of the bridge, thereby avoiding the area under the bridge being not covered by the evaporation material due to the provision of the bridge. Therefore, in order to ensure the integrity of the display, it is necessary to perform a second vapor deposition on the area covered by the bridge.
- this embodiment describes a display device including a display area 3, at least one non-display area 4, and a transition display area 5, wherein the display area 3 is arranged around the non-display area 4;
- the transition display area 5 is adjacent to the non-display area 4 and the display area 3 respectively, wherein the transition display area 5 connects the edges of the non-display area 4 and the display area 3.
- the transition display area 5 can also connect two adjacent non-display areas 4.
- the thickness of the first electrode of the transition display area 5 is less than or equal to the thickness of the first electrode of the display area 3, and the first electrode of the display area 3 and the first electrode of the transition display area 5 The electrodes are connected to form a surface electrode.
- the display area 3 and the transition display area 5 both include: a substrate 6, an array circuit 10, an anode layer 8, an OLED light-emitting layer 7, and a cathode layer 9 stacked on the substrate 6 in sequence; that is, the display Area 3 and the transition display area 5 are both used to display static or dynamic pictures, the difference is that the thickness of the first electrode of the transition display area 5 is less than or equal to the thickness of the first electrode layer of the display area, this embodiment
- the first electrode in the transition display area 5 has a thickness difference, wherein the thickness of the first electrode located at the edge of the transition display area 5 is greater than the thickness of the first electrode located in the middle part of the transition display area 5, for example The thickness of the first electrode at the connecting portion of the transition display area 5 and the display area 3 is greater than the thickness of the first electrode located in the middle portion of the transition display area 5, and the edge thickness of the first electrode of the transition display area 5 is less than or equal to The thickness of the first electrode in zone 3.
- the first electrode in this embodiment is a cathode, that is, the thickness of the cathode layer 9 in the transition display area 5 is less than or equal to the thickness of the cathode layer in the display area 3, and the cathode layer 9 in the transition display area 5 There is a difference in thickness.
- the thickness of the second electrode of the transition display area 5, for example, the anode layer can also be set to be less than or equal to the thickness of the anode layer of the display area 3, and there is a thickness difference.
- the transition display area 5 in this embodiment is elongated, and the thickness of the cathode layer at the connecting portion of the transition display area 5 and the display area 3 is greater than that in the middle of the transition display area 5. Part of the cathode layer thickness.
- the cathode layer 9 of the strip-shaped transition display area 5 has a thickness difference in the width direction of the transition display area 5 (the width direction refers to the direction parallel to the shorter side of the transition display area).
- the existence of the transitional display area avoids incomplete display in the display device due to the incomplete coverage of the vapor deposition material, such as black border display in the area where the bridge is located, and improves the integrity of the display.
- the cathode layer 9 in the second embodiment is formed by evaporation using the mask assembly in the first embodiment.
- the display area 3 corresponds to the opening area 14 on the mask assembly, that is, the vapor deposition material is deposited on the light-emitting layer 7 through the opening area 14 of the mask assembly to form the cathode layer 9 as shown in FIG. 7 and the non-display area 4
- the transition display area 5 corresponds to the area covered by the bridge 13 on the mask assembly.
- the cathode evaporation material can be diffused and connected together through the gap under the bridge 13 when the cathode material is deposited, so that the deposition layer under the bridge 13 can still be attached, so that the evaporation material is from both sides of the bridge 13 Enter the gap between the lower part and the light-emitting layer 7, thereby connecting the vapor deposition material in the opening areas 14 on both sides of the bridge, thereby avoiding the provision of the bridge 13 that the area under the bridge 13 is not vaporized material cover.
- the cross section of the cathode layer of the transition display area 5 along its width direction is shown.
- the surface of the cathode layer 9 of the transition display area 5 is a concave cylindrical surface, and the two ends of the cylindrical surface correspond to the transition display area.
- the display areas 3 on both sides of the width direction of the area 5 are connected, and the depressed area in the middle of the transition display area 5 corresponds to the bridge 13 of the mask assembly forming the cathode layer.
- the cathode layer 9 of the transition display area 5 is recessed toward the direction of the substrate 6, wherein the thickness of the part connecting the display area 3 on both sides of the recess is greater than the thickness of the middle part of the recess, that is, the left and right sides in FIG.
- the thickness of is greater than the thickness of the middle part of the recess.
- the thickness of the cathode layer of the transition display area 5 is h
- the thickness of the cathode layer of the display area 3 is H, so that: 50nm ⁇ h ⁇ H, and 100nm ⁇ H ⁇ 180nm.
- the display device of this embodiment also includes a device unit, wherein the device unit includes a mounting hole 2 dug in the non-display area 4 and a functional element provided in the mounting hole 2, and the functional element includes a photosensitive element, a camera, Any one or more of earpiece, light sensor, and light emitter.
- a base substrate 6 is provided, and an array circuit 10, an anode layer 8 and an OLED light-emitting layer 7 are sequentially fabricated on the base substrate 6;
- the first cathode layer 91 is formed by evaporation of the cathode layer material on the light-emitting layer 7, wherein the thickness of the first cathode layer 91 is less than the minimum value of h, that is, the thickness of the first cathode layer 91 is less than the transition The minimum thickness of the cathode layer in the display area 5;
- a mounting hole 2 is formed by etching in the non-display area 4;
- the mask assembly as in Example 1 is used to shield the area where the mounting hole 2 is located, and the second cathode layer 92 is formed by evaporation of a cathode material, wherein the second cathode layer 92 covers the transition Display area 5 and display area 3;
- the first cathode layer 91 in step S2 and the second cathode layer 92 in step S4 jointly constitute the cathode layer 9 of the display device.
- the cathode layer By using two steps to form the cathode layer, it can be ensured that there is at least the first cathode layer 91 in the transition display area 5, that is, it can be ensured that the transition display area 5 is conductive.
- the thickness of the cathode layer 9 of the transition display area 5 is uneven. Affect the normal display, ensure the brightness uniformity and normal display of the transition display area 5.
- the external drive circuit can be used to perform external optical compensation for the transition display area display module, such as the optical extraction type Demura optical compensation to improve the overall display device The uniformity of brightness prevents afterimages.
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Abstract
Description
Claims (18)
- 一种掩模组件,包括:掩模边框,支撑于基底表面,所述掩模边框内形成开口区;若干孤岛遮挡部,位于所述开口区内,所述孤岛遮挡部与所述基底表面接触;以及连桥,所述孤岛遮挡部通过所述连桥与所述掩模边框或相邻孤岛遮挡部连接,所述连桥不与所述基底表面接触。
- 根据权利要求1所述的掩模组件,其中,所述连桥悬空架设于所述基底表面上方,以在所述连桥与所述基底表面之间留有空隙。
- 根据权利要求1所述的掩模组件,其中,所述孤岛遮挡部包括圆形遮挡板和/或方形遮挡板。
- 根据权利要求3所述的掩模组件,其中,所述连桥的厚度小于所述孤岛遮挡部的厚度。
- 根据权利要求4所述的掩模组件,其中,所述连桥为直条形。
- 根据权利要求4所述的掩模组件,其中,所述连桥所在直线经过所述孤岛遮挡部的中心。
- 根据权利要求1至6中任一项所述的掩模组件,其中,所述连桥设置有至少两个。
- 一种显示装置,其包括显示区和至少一个非显示区,所述显示区围绕所述非显示区设置;还包括过渡显示区,所述过渡显示区与所述非显示区和所述显示区分别邻接,所述显示区和所述过渡显示区均用于显示静态或动态画面;所述过渡显示区的第一电极的厚度小于等于所述显示区的第一电极的厚度。
- 根据权利要求8所述的显示装置,其中,所述显示区的第一电极与所述过渡显示区的第一电极连接形成面电极。
- 根据权利要求8所述的显示装置,其中,所述过渡显示区的第一电极存在厚度差。
- 根据权利要求10所述的显示装置,其中,所述过渡显示区边缘的第一电极的厚度大于所述过渡显示区中间部分的第一电极的厚度。
- 根据权利要求8所述的显示装置,其中,所述过渡显示区的第一电极的厚度h≥50nm,所述显示区的第一电极的厚度为100nm≤H≤180nm。
- 根据权利要求8所述的显示装置,其中,所述过渡显示区的第二电极的厚度小于等于所述显示区的第二电极的厚度。
- 根据权利要求13所述的显示装置,其中,所述过渡显示区的第二电极存在厚度差。
- 根据权利要求14所述的显示装置,其中,所述过渡显示区边缘的第二电极的厚度大于所述过渡显示区中间部分的第二电极的厚度。
- 根据权利要求8至15中任一项所述的显示装置,还包括器件单元,所述器件单元包括挖设于所述非显示区内的安装孔和设于所述安装孔中的功能元件,所述功能元件包括感光元件、摄像头、听筒中的任意一种或几种。
- 一种制作显示装置的方法,所述显示装置为权利要求8-16中任一项所述的显示装置,包括以下步骤:S1:提供衬底基板,在衬底基板上依次制作形成阵列电路、阳极层和发光层;S2:在发光层上采用阴极材料蒸镀形成第一阴极层;S3:在非显示区刻蚀形成安装孔;S4:采用权利要求1-7中任一项所述的掩模组件,对安装孔所在区域进行遮挡,并采用阴极材料蒸镀形成第二阴极层,其中第二阴极层覆盖过渡显示区和显示区;其中,步骤S2中得到的所述第一阴极层和步骤S4中得到的所述第二阴极层共同构成显示装置的阴极层。
- 根据权利要求17所述的方法,其中,步骤S2中得到的所述第一阴极层的厚度≤50nm。
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CN110438446B (zh) | 2020-12-29 |
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