WO2020042235A1 - 柔性oled显示面板 - Google Patents

柔性oled显示面板 Download PDF

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Publication number
WO2020042235A1
WO2020042235A1 PCT/CN2018/105514 CN2018105514W WO2020042235A1 WO 2020042235 A1 WO2020042235 A1 WO 2020042235A1 CN 2018105514 W CN2018105514 W CN 2018105514W WO 2020042235 A1 WO2020042235 A1 WO 2020042235A1
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WIPO (PCT)
Prior art keywords
layer
top surface
display panel
flexible
protrusions
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PCT/CN2018/105514
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English (en)
French (fr)
Inventor
张锋
Original Assignee
武汉华星光电半导体显示技术有限公司
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Priority to US16/307,439 priority Critical patent/US20210234129A1/en
Publication of WO2020042235A1 publication Critical patent/WO2020042235A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of display technology, and in particular, to a flexible OLED display panel.
  • flexible OLED display panels are usually formed by stacking multiple layers of inorganic and organic structures one by one.
  • flexible OLED display panels include a flexible substrate, a barrier layer, a buffer layer, an active layer, a gate insulating layer, a gate, and interlayer insulation. Layer, source-drain layer, planarization layer, OLED light-emitting layer, pixel definition layer, support pad, packaging layer, etc.
  • the multilayer superimposed film structure is limited by the deformation characteristics and stress of each layer of film material, which limits flexibility
  • flexible display screens are widely known as curved screens because they can only display a fixed curved surface, and there is a certain distance from the goal of achieving flexible and foldable flexible screens.
  • the invention provides a flexible OLED display panel to solve the existing flexible display panels. Due to the superposition of the multilayer film structure, the stress and deformation of each film layer are different, thereby affecting the bendability and folding of the display panel. Sexual problems.
  • the invention provides a flexible OLED display panel.
  • the display panel defines a display area and a bent area.
  • the display panel includes a flexible substrate, a buffer layer formed on the flexible substrate, and the buffer layer.
  • the flexible substrate includes a first polyimide layer, a first barrier layer, and a second polyimide, which are sequentially disposed
  • An amine layer, a second barrier layer, and the encapsulation layer including a first inorganic layer, a first organic layer, a second inorganic layer, and a second organic layer sequentially disposed on the OLED light emitting layer; wherein the first inorganic layer
  • the layer includes a first top surface having at least two protrusions, the first top surface facing away from the OLED light emitting layer;
  • the second inorganic layer includes a second top surface having at least two protrusions, and the second The top surface faces away from the
  • the second polyimide layer located in the bending area is provided with at least two first through holes, and the second blocking layer passes through the first through holes. A hole is in contact with the first barrier layer.
  • the buffer layer includes a first buffer layer and a second buffer layer which are sequentially disposed on the flexible substrate.
  • the first buffer layer includes a fifth top surface having at least two protrusions, and the fifth top surface faces away from the flexible substrate.
  • the first buffer layer located in the bending area is provided with at least two second through holes, and the second buffer layer communicates with the Said flexible substrate contact.
  • the thin film transistor layer includes a first gate insulating layer, a second gate insulating layer, an interlayer insulating layer, a planarization layer, and a pixel, which are sequentially disposed on the buffer layer. Define layers.
  • the second gate insulating layer located in the bent region includes a sixth top surface having at least two protrusions, and the sixth top surface faces away from the flexibility A substrate;
  • the planarization layer located in the bending region includes a seventh top surface having at least two protrusions, the seventh top surface facing away from the flexible substrate.
  • the first gate insulating layer located in the bent area is provided with at least two third through holes, and the second gate insulating layer passes through the third The through hole is in contact with the buffer layer; the interlayer insulating layer located in the bent area is provided with at least two fourth through holes, and the planarization layer is in contact with the second through the fourth through hole.
  • the gate insulating layer is in contact.
  • the present invention also provides a flexible OLED display panel.
  • the display panel defines a display area and a bent area.
  • the display panel includes a flexible substrate, a buffer layer formed on the flexible substrate, and a buffer layer formed on the flexible substrate.
  • the packaging layer includes a first inorganic layer, a first organic layer, a first Two inorganic layers and a second organic layer; wherein the first inorganic layer includes a first top surface having at least two protrusions, the first top surface faces away from the OLED light emitting layer;
  • the second inorganic layer includes A second top surface having at least two protrusions, the second top surface facing away from the OLED light emitting layer.
  • the flexible substrate includes a first polyimide layer, a first barrier layer, a second polyimide layer, and a second barrier layer which are sequentially disposed;
  • the second polyimide layer located in the bending area is provided with at least two first through holes, and the second blocking layer passes through the first through holes. A hole is in contact with the first barrier layer.
  • the buffer layer includes a first buffer layer and a second buffer layer which are sequentially disposed on the flexible substrate.
  • the first buffer layer includes a fifth top surface having at least two protrusions, and the fifth top surface faces away from the flexible substrate.
  • the first buffer layer located in the bending area is provided with at least two second through holes, and the second buffer layer communicates with the Said flexible substrate contact.
  • the thin film transistor layer includes a first gate insulating layer, a second gate insulating layer, an interlayer insulating layer, a planarization layer, and a pixel, which are sequentially disposed on the buffer layer. Define layers.
  • the second gate insulating layer located in the bent region includes a sixth top surface having at least two protrusions, and the sixth top surface faces away from the flexibility A substrate;
  • the planarization layer located in the bending region includes a seventh top surface having at least two protrusions, the seventh top surface facing away from the flexible substrate.
  • the first gate insulating layer located in the bent area is provided with at least two third through holes, and the second gate insulating layer passes through the third The through hole is in contact with the buffer layer; the interlayer insulating layer located in the bent area is provided with at least two fourth through holes, and the planarization layer is in contact with the second through the fourth through hole.
  • the gate insulating layer is in contact.
  • the beneficial effect of the present invention is: by setting the surface of each film layer to a concave-convex structure, the area of each contact surface is increased, and the stress generated by each film layer during bending is eliminated and dispersed, and finally flexibility is achieved Bending and folding characteristics of OLED display panels.
  • FIG. 1 is a schematic diagram of the overall structure of a flexible OLED display panel according to the present invention.
  • FIG. 2 is a schematic structural diagram of a packaging layer according to the first embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a flexible substrate and a buffer layer in a display area according to the first embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a bending region according to a second embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a bending region according to Embodiment 3 of the present invention.
  • the present invention is directed to the existing flexible display panel. Due to the superposition of the multilayer film structure and the different deformation characteristics of the film material of each film layer, the stresses and deformations that occur on each film layer are different, thereby affecting the bending of the display panel And folding, which restrict the development of the flexible display panel. This embodiment can solve this defect.
  • this embodiment provides a flexible OLED display panel.
  • the flexible OLED display panel defines a display area 100 and a bending area 200.
  • the flexible OLED display panel includes: a flexible substrate 11; a buffer layer; 12 is formed on the flexible substrate 11; a thin film transistor layer is formed on the buffer layer 12; an OLED light emitting layer 14 is formed on the thin film transistor layer; a packaging layer 16 is formed on the OLED light emitting layer 14 surface.
  • the flexible substrate 11 includes: a first polyimide layer 111; a first barrier layer 112 disposed on a surface of the first polyimide layer 111; and a second polyimide layer 113 is disposed on the surface of the first barrier layer 112; and the second barrier layer 114 is disposed on the surface of the second polyimide layer 113.
  • the first polyimide layer 111 is fabricated on a glass substrate (not shown). After the fabrication is completed, the glass substrate is peeled off.
  • the first polyimide layer 111 includes a plurality of (At least two) raised third top surfaces 1111 that are away from the glass substrate, that is, close to the first barrier layer; wherein the width of the plurality of protrusions is not fixed, so The distance between the protrusions is not fixed.
  • the first barrier layer 112 is fabricated on the surface of the first polyimide layer 111, the lower surface of the first barrier layer 112 and the third top surface 1111 of the first polyimide layer 111
  • the contact forms a concave-convex structure, which increases the contact area between consecutive film layers, which is conducive to dispersing and eliminating stress generated during the bending process.
  • the second polyimide layer 113 includes a fourth top surface 1131 provided with a plurality of protrusions.
  • the fourth top surface 1131 faces away from the first polyimide layer 111; the second barrier layer 114 It is formed on the surface of the second polyimide layer 113, and the lower surface of the second barrier layer is in contact with the fourth top surface 1131 to form a concave-convex structure.
  • the flexible substrate 111 adopts a double-layer polyimide structure, which has multiple protective effects on the flexible OLED display panel.
  • the two-layer barrier structure can prevent water and oxygen from invading and prevent corrosion of the OLED device;
  • the first barrier Both the layer 112 and the second barrier layer 114 are silicon oxide (SiOx) layers.
  • the buffer layer 12 includes a first buffer layer 121 provided on a surface of the second barrier layer 112 and a second buffer layer 122 provided on a surface of the first buffer layer 121.
  • the first buffer layer 121 includes a fifth top surface 1211 having a plurality of (at least two) protrusions.
  • the widths of the plurality of protrusions may be the same or different, and the distance between the protrusions is not fixed. Settings.
  • the lower surface of the second buffer layer 122 and the fifth top surface 1211 are in contact with each other to form a concave-convex structure.
  • the first buffer layer 121 is a silicon oxide (SiOx) layer
  • the second buffer layer 122 is a silicon nitride (SiNx) layer.
  • the encapsulation layer 16 includes: a first inorganic layer 161 disposed on the surface of the OLED light-emitting layer 14; a first organic layer 162 disposed on the surface of the first inorganic layer; and a second inorganic layer 163 Is disposed on the surface of the first organic layer 162; the second organic layer 164 is disposed on the surface of the second inorganic layer 163.
  • the first inorganic layer 161 covers the OLED light-emitting layer.
  • the first inorganic layer 161 includes a first top surface 1611 having a plurality of protrusions.
  • the first top surface 1611 faces away from the OLED light-emitting layer.
  • the widths of the plurality of protrusions may be the same or different, and the interval distance between adjacent protrusions may be the same or different; the lower surface of the first organic layer 162 is in contact with the first top surface 1611, Forms a concave-convex structure.
  • the second inorganic layer 163 includes a second top surface 1631 having a plurality of protrusions.
  • the second top surface 1631 faces away from the OLED light emitting layer, and a lower surface of the second organic layer 164 and the second top layer.
  • the surface 1631 is in contact with each other to form a concave-convex structure.
  • the thin film transistor layer includes: an active layer 131 provided on a surface of the second buffer layer 122; a first gate insulating layer 132 provided on a surface of the active layer 131; A gate insulating layer 132 covers the active layer 131; a first gate 133 is disposed on the surface of the first gate insulating layer 132; a second gate insulating layer 134 is disposed on the first gate 133 On the surface, the second gate insulating layer 134 covers the first gate 133; the second gate 135 is disposed on the surface of the second gate insulating layer 134; and the interlayer insulating layer 136 is disposed on the first On the surface of the two gate electrodes 135, the interlayer insulating layer 136 covers the second gate electrode 135; a source-drain layer 137 is provided on the surface of the interlayer insulating layer 136; a planarization layer 138 is provided on the source-drain layer 137 surface; a pixel definition layer 139 formed on the planar
  • the source-drain layer 137 includes a source and a drain.
  • the first gate insulating layer 132, the second gate insulating layer 134, and the interlayer insulating layer 136 are provided with through holes. Or the drain is connected to the active layer through the through hole.
  • the pattern of the first gate 133 is different from that of the second gate 135.
  • the first gate 133 is used to form a gate
  • the second gate 135 is used as a metal layer to form a trace or a capacitor.
  • the planarization layer 138 provides a flat substrate for the devices in the OLED light emitting layer.
  • the OLED light-emitting layer 14 is disposed in the display area 100.
  • the OLED light-emitting layer includes an anode 141 disposed on the surface of the planarization layer 138, a light-emitting functional layer 142 disposed on the surface of the anode 141, and a cathode 143. Is disposed on the surface of the light-emitting functional layer 142.
  • the planarization layer 138 is provided with a through hole, and the anode 141 is electrically connected to the source or drain through the through hole.
  • the light emitting functional layer 142 includes a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer, and an electron injection layer, which are sequentially disposed.
  • the pixel definition layer 139 is provided with a via hole to accommodate a part of the structure of the light-emitting functional layer, such as a light-emitting material layer.
  • the flexible OLED display panel further includes a support pad 15 on the surface of the pixel definition layer 139.
  • the support pad 15 is used to support a certain height, and avoids masking during the production of the OLED light-emitting layer.
  • the panel is in contact with the OLED light-emitting device, causing crush damage to the OLED light-emitting device.
  • the cathode 143 covers a part of the support pad 15.
  • the surface of the cathode 143 facing away from the first polyimide layer 111 and the support pad 15 located in the bending region 200 are facing away from the first poly.
  • the surface of the imide layer 111 is flush.
  • the flexible OLED display panel further includes an organic structure layer 17, which is located in the bending region 200 to enhance the flexibility of the bending region 200.
  • the second barrier layer 114, the first A buffer layer 121, the second buffer layer 122, the first gate insulating layer 132, the second gate insulating layer 134, and the interlayer insulating layer 136 together form a via hole for receiving the via.
  • the bending area 200 Compared with the display area 100, the bending area 200 has higher requirements for flexibility, so the organic structure layer 17 is provided to enhance the bending property of the bending area 200.
  • the optimized structure of the film layer in this embodiment is different from the prior art, the manufacturing process of the photomask process has not been increased, and the optimized structure can be realized only by slightly modifying the mask and the etching process. Does not increase production costs.
  • the second gate insulating layer 134 includes a sixth top surface 1341 having a plurality of protrusions, and the sixth top surface 1341 faces away from the flexible substrate 11.
  • the lower surface of the interlayer insulating layer 136 is in contact with the sixth top surface 1341 to form a concave-convex structure.
  • the planarization layer 138 includes a seventh top surface 1381 having a plurality of protrusions.
  • the seventh top surface 1381 faces away from the flexible substrate 11, and a lower surface of the pixel definition layer 139 and the seventh top surface. 1381 contact to form a concave-convex structure.
  • the contact area between the film layers is increased, which is beneficial to eliminate and disperse the stress generated by the film layer during the bending process, and further enhance the bending property of the bending region. .
  • the distance between adjacent protrusions on each film layer is not fixed, and the width of the protrusions is not fixed.
  • the second polyimide layer 113 is provided with a plurality of first through holes 1132, and the second blocking layer 114 passes through the first through holes 1132 and the first blocking layer 112. During the contact process, a full exposure method is adopted to form the first through hole 1132.
  • the first buffer layer 121 is provided with a plurality of second through holes 1212, and the second buffer layer 122 is in contact with the second blocking layer 114 through the second through holes 1212.
  • the first gate insulating layer 132 is provided with a plurality of third through holes 1321, and the second gate insulating layer 134 is in contact with the second buffer layer 122 through the third through holes 1321.
  • the interlayer insulating layer 136 is provided with a plurality of fourth through holes 1361, and the planarization layer 138 is in contact with the second gate insulating layer 134 through the fourth through holes 1361.
  • the cross-section of the through-hole involved in this embodiment is rectangular. Compared with other shapes, such as circular and oval, it has a larger contact area. In the manufacturing process, rectangular through-holes are easier to manufacture.
  • the effect of increasing the contact area between the film layers and dispersing the stress can also be achieved.
  • the present invention By setting the surface of each film layer to a concave-convex structure, the present invention increases the area of each contact surface, thereby eliminating and dispersing the stress generated by each film layer during the bending process, and finally achieving flexible OLED display.
  • the bending and folding characteristics of the panel By setting the surface of each film layer to a concave-convex structure, the present invention increases the area of each contact surface, thereby eliminating and dispersing the stress generated by each film layer during the bending process, and finally achieving flexible OLED display. The bending and folding characteristics of the panel.

Abstract

一种柔性OLED显示面板，包括柔性衬底（11）、缓冲层（12）、薄膜晶体管层、OLED发光层（14）、封装层（16），封装层包括依次设置在OLED发光层上的第一无机层（161）、第一有机层（162）、第二无机层（163）以及第二有机层（164）；其中，第一无机层包括具有至少两个凸起的第一顶面（1611），第一顶面背离OLED发光层；第二无机层包括具有至少两个凸起的第二顶面（1631），第二顶面背离OLED发光层。

Description

柔性OLED显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种柔性OLED显示面板。
 背景技术
目前柔性OLED显示面板通常由多层的无机和有机结构逐层叠加而成，一般柔性OLED显示面板包括柔性基底、阻挡层、缓冲层、有源层、栅极绝缘层、栅极、层间绝缘层、源漏层、平坦化层、OLED发光层、像素定义层、支撑垫、封装层等，该多层叠加薄膜结构因受各层薄膜材料的形变特性和所受应力的不同从而限制了柔性显示的发展，目前柔性显示屏因其只能呈现出一个固定的曲面而被广泛称为曲面屏，距离实现柔性屏可弯折、可折叠的目标有一定的距离。
综上所述，现有的柔性显示面板的多个膜层结构叠加，导致各个膜层受到的应力不同，限制了显示屏在弯折和折叠方面的发展。
 技术问题
本发明提供一种柔性OLED显示面板，以解决现有的柔性显示面板，由于多层膜层结构叠加，导致各个膜层受到的应力和发生的形变不同，进而影响显示面板的弯折性和折叠性的问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种柔性OLED显示面板，所述显示面板定义有显示区域和弯折区域，所述显示面板包括柔性衬底、形成于所述柔性衬底上的缓冲层、形成于所述缓冲层上的薄膜晶体管层、形成于所述薄膜晶体管层上的OLED发光层、以及封装层；所述柔性衬底包括依次设置的第一聚酰亚胺层、第一阻挡层、第二聚酰亚胺层、第二阻挡层，所述封装层包括依次设置在所述OLED发光层上的第一无机层、第一有机层、第二无机层以及第二有机层；其中，所述第一无机层包括具有至少两个凸起的第一顶面，所述第一顶面背离所述OLED发光层；所述第二无机层包括具有至少两个凸起的第二顶面，所述第二顶面背离所述OLED发光层；所述第一聚酰亚胺层包括具有至少两个凸起的第三顶面，所述第三顶面靠近所述第一阻挡层；所述第二聚酰亚胺层包括具有至少两个凸起的第四顶面，所述第四顶面背离所述第一聚酰亚胺层。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第二聚酰亚胺层设置有至少两个第一通孔，所述第二阻挡层通过所述第一通孔与所述第一阻挡层接触。
在本发明的至少一种实施例中，所述缓冲层包括依次设置在所述柔性衬底上的第一缓冲层、第二缓冲层。
在本发明的至少一种实施例中，所述第一缓冲层包括具有至少两个凸起的第五顶面，所述第五顶面背离所述柔性衬底。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第一缓冲层设置有至少两个第二通孔，所述第二缓冲层通过所述第二通孔与所述柔性衬底接触。
在本发明的至少一种实施例中，所述薄膜晶体管层包括依次设置在所述缓冲层上的第一栅极绝缘层、第二栅极绝缘层、层间绝缘层、平坦化层、像素定义层。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第二栅极绝缘层包括具有至少两个凸起的第六顶面，所述第六顶面背离所述柔性衬底；位于所述弯折区域内的所述平坦化层包括具有至少两个凸起的第七顶面，所述第七顶面背离所述柔性衬底。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第一栅极绝缘层设置有至少两个第三通孔，所述第二栅极绝缘层通过所述第三通孔与所述缓冲层接触；位于所述弯折区域内的所述层间绝缘层设置有至少两个第四通孔，所述平坦化层通过所述第四通孔与所述第二栅极绝缘层接触。
本发明还提供一种柔性OLED显示面板，所述显示面板定义有显示区域和弯折区域，所述显示面板包括柔性衬底、形成于所述柔性衬底上的缓冲层、形成于所述缓冲层上的薄膜晶体管层、形成于所述薄膜晶体管层上的OLED发光层、以及封装层；所述封装层包括依次设置在所述OLED发光层上的第一无机层、第一有机层、第二无机层以及第二有机层；其中，所述第一无机层包括具有至少两个凸起的第一顶面，所述第一顶面背离所述OLED发光层；所述第二无机层包括具有至少两个凸起的第二顶面，所述第二顶面背离所述OLED发光层。
在本发明的至少一种实施例中，所述柔性衬底包括依次设置的第一聚酰亚胺层、第一阻挡层、第二聚酰亚胺层、第二阻挡层；
在本发明的至少一种实施例中，位于所述弯折区域内的所述第二聚酰亚胺层设置有至少两个第一通孔，所述第二阻挡层通过所述第一通孔与所述第一阻挡层接触。
在本发明的至少一种实施例中，所述缓冲层包括依次设置在柔性衬底上的第一缓冲层、第二缓冲层。
在本发明的至少一种实施例中，所述第一缓冲层包括具有至少两个凸起的第五顶面，所述第五顶面背离所述柔性衬底。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第一缓冲层设置有至少两个第二通孔，所述第二缓冲层通过所述第二通孔与所述柔性衬底接触。
在本发明的至少一种实施例中，所述薄膜晶体管层包括依次设置在所述缓冲层上的第一栅极绝缘层、第二栅极绝缘层、层间绝缘层、平坦化层、像素定义层。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第二栅极绝缘层包括具有至少两个凸起的第六顶面，所述第六顶面背离所述柔性衬底；位于所述弯折区域内的所述平坦化层包括具有至少两个凸起的第七顶面，所述第七顶面背离所述柔性衬底。
在本发明的至少一种实施例中，位于所述弯折区域内的所述第一栅极绝缘层设置有至少两个第三通孔，所述第二栅极绝缘层通过所述第三通孔与所述缓冲层接触；位于所述弯折区域内的所述层间绝缘层设置有至少两个第四通孔，所述平坦化层通过所述第四通孔与所述第二栅极绝缘层接触。
 有益效果
本发明的有益效果为：通过将各膜层的表面设置成凹凸配合的结构，增大了各个接触面的面积，进而消除和分散了在弯折过程中各个膜层产生的应力，最终实现柔性OLED显示面板的弯折和折叠的特性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的柔性OLED显示面板的整体结构示意图；
图2为本发明实施例一的封装层的结构示意图；
图3为本发明实施例一的显示区域的柔性衬底和缓冲层的结构示意图；
图4为本发明实施例二的弯折区域的结构示意图；
图5为本发明实施例三的弯折区域的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的柔性显示面板，由于多层膜层结构叠加，且各个膜层的薄膜材料的形变特性不同，导致各个膜层受到的应力和发生的形变不同，进而影响显示面板的弯折性和折叠性，限制柔性显示面板的发展的问题，本实施例能够解决该缺陷。
实施例一
如图1所示，本实施例提供一种柔性OLED显示面板，所述柔性OLED显示面板上定义有显示区域100和弯折区域200，所述柔性OLED显示面板包括：柔性衬底11；缓冲层12，形成于所述柔性衬底11上；薄膜晶体管层，形成于所述缓冲层12上，OLED发光层14，形成于所述薄膜晶体管层上；封装层16形成于所述OLED发光层14表面。
如图3所示，所述柔性衬底11包括：第一聚酰亚胺层111；第一阻挡层112，设置于所述第一聚酰亚胺层111表面；第二聚酰亚胺层113，设置于所述第一阻挡层112表面；第二阻挡层114，设置于所述第二聚酰亚胺层113表面。
所述第一聚酰亚胺层111在一玻璃基板（图中未画出）上制作，制作完成后，将所述玻璃基板剥离；所述第一聚酰亚胺层111包括设置有多个（至少两个）凸起的第三顶面1111，所述第三顶面1111背离所述玻璃基板，即靠近所述第一阻挡层；其中，所述多个凸起的宽度不固定，所述凸起之间的间隔距离不固定。
所述第一阻挡层112制作在所述第一聚酰亚胺层111表面，所述第一阻挡层112的下表面与所述第一聚酰亚胺层111的所述第三顶面1111接触，形成凹凸配合的结构，增大了连个膜层之间的接触面积，有利于分散和消除弯折过程中产生的应力。
所述第二聚酰亚胺层113包括设置有多个凸起的第四顶面1131，所述第四顶面1131背离所述第一聚酰亚胺层111；所述第二阻挡层114形成于所述第二聚酰亚胺层113表面，所述第二阻挡层的下表面与所述第四顶面1131接触，形成凹凸配合的结构。
所述柔性衬底111采用双层聚酰亚胺结构，对所述柔性OLED显示面板起到多重保护作用，两层阻挡层结构，能够防止水氧入侵，避免腐蚀OLED器件；所述第一阻挡层112、所述第二阻挡层114均为氧化硅（SiOx）层。
所述缓冲层12包括：第一缓冲层121，设置于所述第二阻挡层112的表面；第二缓冲层122，设置于所述第一缓冲层121的表面。
其中，所述第一缓冲层121包括具有多个（至少两个）凸起的第五顶面1211，所述多个凸起的宽度可相同可不同，所述凸起之间的距离不固定设置。
所述第二缓冲层122的下表面与所述第五顶面1211相互接触，形成凹凸配合的结构。
所述第一缓冲层121为氧化硅（SiOx）层，所述第二缓冲层122为氮化硅（SiNx）层。
如图2所示，所述封装层16包括：第一无机层161，设置于所述OLED发光层14表面；第一有机层162，设置于所述第一无机层表面；第二无机层163，设置于所述第一有机层162表面；第二有机层164，设置于所述第二无机层163表面。
其中，所述第一无机层161覆盖所述OLED发光层，所述第一无机层161包括具有多个凸起的第一顶面1611，所述第一顶面1611背离所述OLED发光层，所述多个凸起的宽度可相同可不同，相邻的所述凸起之间的间隔距离可相同可不同；所述第一有机层162的下表面与所述第一顶面1611接触，形成凹凸配合的结构。
所述第二无机层163包括具有多个凸起的第二顶面1631，所述第二顶面1631背离所述OLED发光层，所述第二有机层164的下表面与所述第二顶面1631接触，形成凹凸配合的结构。
如图1所示，所述薄膜晶体管层包括：有源层131，设置于所述第二缓冲层122表面；第一栅极绝缘层132，设置于所述有源层131表面，所述第一栅极绝缘层132覆盖所述有源层131；第一栅极133，设置于所述第一栅极绝缘层132表面；第二栅极绝缘层134，设置于所述第一栅极133表面，所述第二栅极绝缘层134覆盖所述第一栅极133；第二栅极135，设置于所述第二栅极绝缘层134表面；层间绝缘层136，设置于所述第二栅极135表面，所述层间绝缘层136覆盖所述第二栅极135；源漏层137，设置于所述层间绝缘层136表面；平坦化层138，设置于所述源漏层137表面；像素定义层139，形成于所述平坦化层138上。
所述源漏层137包括源极和漏极，所述第一栅极绝缘层132、所述第二栅极绝缘层134以及所述层间绝缘层136上设置有通孔，所述源极或所述漏极通过该通孔与所述有源层连接。所述第一栅极133与所述第二栅极135的图案不同，所述第一栅极133用以形成栅极，所述第二栅极135作为金属层，形成走线或电容。
所述平坦化层138为所述OLED发光层中的器件提供一平坦的基底。
所述OLED发光层14设置于所述显示区域100内，所述OLED发光层包括：阳极141，设置于所述平坦化层138表面；发光功能层142，设置于所述阳极141表面；阴极143，设置于所述发光功能层142表面。
所述平坦化层138上设置有通孔，所述阳极141通过该通孔与所述源极或漏极电性连接。
所述发光功能层142包括依次设置的空穴注入层、空穴传输层、发光材料层、电子传输层、电子注入层。
所述像素定义层139上设置有过孔，用以容纳所述发光功能层的部分结构，如发光材料层。
所述柔性OLED显示面板还包括支撑垫15，所述支撑垫15于所述像素定义层139表面，所述支撑垫15用以支撑起一定的高度，避免在制作OLED发光层过程中，掩膜板与OLED发光器件接触，对所述OLED发光器件造成挤压损伤。
所述阴极143覆盖所述支撑垫15的一部分，所述阴极143背离所述第一聚酰亚胺层111的表面与位于弯折区域内200内的所述支撑垫15背离所述第一聚酰亚胺层111的表面平齐。
所述柔性OLED显示面板还包括有机结构层17，所述有机结构层位于所述弯折区域200内，用以增强所述弯折区域200的柔性，所述第二阻挡层114、所述第一缓冲层121、所述第二缓冲层122、所述第一栅极绝缘层132、所述第二栅极绝缘层134以及所述层间绝缘层136一起形成过孔，用以容纳所述有机结构层17。
相对于所述显示区域100来说，所述弯折区域200对柔性的要求更高，因此通过设置所述有机结构层17来增强弯折区域200的弯折性。
本实施例中的膜层优化结构虽与现有技术不同，但是在制作过程中，光罩制程的工序没有增加，只需将掩模板和刻蚀过程稍作修改，即可实现该优化结构，不会增加制作成本。
实施例二
在本实施例中，除了弯折区域200内的所述薄膜晶体管层的结构与实施例一不同，其他结构均与实施例一所述的结构相同。
如图4所示，在弯折区域200内，所述第二栅极绝缘层134包括具有多个凸起的第六顶面1341，所述第六顶面1341背离所述柔性衬底11，所述层间绝缘层136的下表面与与所述第六顶面1341接触，形成凹凸配合的结构。
所述平坦化层138包括具有多个凸起的第七顶面1381，所述第七顶面1381背离所述柔性衬底11，所述像素定义层139的下表面与所述第七顶面1381接触，形成凹凸配合的结构。
在所述弯折区域200内，通过设置多个该凹凸结构，增大膜层间的接触面积，有利于消除和分散弯折过程中膜层产生的应力，进一步增强弯折区域的弯折性。
本实施例中的每一膜层上的相邻凸起的间距不固定设置，凸起的宽度不固定设置。
实施例三
在实施例二的基础上，在膜层沉积过程中，采用Mask（掩膜板）完全曝光的方式将部分膜层完全去除，如图5所示。
在弯折区域200内，所述第二聚酰亚胺层113设置有多个第一通孔1132，所述第二阻挡层114通过所述第一通孔1132与所述第一阻挡层112接触，在光罩过程中，采用完全曝光方式，以形成所述第一通孔1132。
所述第一缓冲层121设置有多个第二通孔1212，所述第二缓冲层122通过所述第二通孔1212与所述第二阻挡层114接触。
所述第一栅极绝缘层132设置有多个第三通孔1321，所述第二栅极绝缘层134通过所述第三通孔1321与所述第二缓冲层122接触。
所述层间绝缘层136设置有多个第四通孔1361，所述平坦化层138通过所述第四通孔1361与所述第二栅极绝缘层134接触。
本实施例中涉及到的通孔的横截面为矩形，相比其他形状，如圆形、椭圆形，具有更大的接触面积，并且在制作过程中，矩形通孔更容易制作。
与实施例二相比，本实施例通过设置具有多个通孔的膜层结构，同样能达到增大膜层间的接触面积，分散应力的作用。
有益效果：本发明通过将各膜层的表面设置成凹凸配合的结构，增大了各个接触面的面积，进而消除和分散了在弯折过程中各个膜层产生的应力，最终实现柔性OLED显示面板的弯折和折叠的特性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种柔性OLED显示面板，其中，所述显示面板定义有显示区域和弯折区域，所述显示面板包括：
    柔性衬底，所述柔性衬底包括依次设置的第一聚酰亚胺层、第一阻挡层、第二聚酰亚胺层、第二阻挡层；
    缓冲层，形成于所述柔性衬底上；
    薄膜晶体管层，形成于所述缓冲层上；
    OLED发光层，形成于所述薄膜晶体管层上；
    封装层，所述封装层包括依次设置在所述OLED发光层上的第一无机层、第一有机层、第二无机层以及第二有机层；其中，
    所述第一无机层包括具有至少两个凸起的第一顶面，所述第一顶面背离所述OLED发光层；所述第二无机层包括具有至少两个凸起的第二顶面，所述第二顶面背离所述OLED发光层；
    所述第一聚酰亚胺层包括具有至少两个凸起的第三顶面，所述第三顶面靠近所述第一阻挡层；
    所述第二聚酰亚胺层包括具有至少两个凸起的第四顶面，所述第四顶面背离所述第一聚酰亚胺层。
  2. 根据权利要求1所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第二聚酰亚胺层设置有至少两个第一通孔，所述第二阻挡层通过所述第一通孔与所述第一阻挡层接触。
  3. 根据权利要求1所述的柔性OLED显示面板，其中，所述缓冲层包括依次设置在所述柔性衬底上的第一缓冲层、第二缓冲层。
  4. 根据权利要求3所述的柔性OLED显示面板，其中，所述第一缓冲层包括具有至少两个凸起的第五顶面，所述第五顶面背离所述柔性衬底。
  5. 根据权利要求3所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第一缓冲层设置有至少两个第二通孔，所述第二缓冲层通过所述第二通孔与所述柔性衬底接触。
  6. 根据权利要求1所述的柔性OLED显示面板，其中，所述薄膜晶体管层包括依次设置在所述缓冲层上的第一栅极绝缘层、第二栅极绝缘层、层间绝缘层、平坦化层、像素定义层。
  7. 根据权利要求6所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第二栅极绝缘层包括具有至少两个凸起的第六顶面，所述第六顶面背离所述柔性衬底；位于所述弯折区域内的所述平坦化层包括具有至少两个凸起的第七顶面，所述第七顶面背离所述柔性衬底。
  8. 根据权利要求6所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第一栅极绝缘层设置有至少两个第三通孔，所述第二栅极绝缘层通过所述第三通孔与所述缓冲层接触；位于所述弯折区域内的所述层间绝缘层设置有至少两个第四通孔，所述平坦化层通过所述第四通孔与所述第二栅极绝缘层接触。
  9. 一种柔性OLED显示面板，其中，所述显示面板定义有显示区域和弯折区域，所述显示面板包括：
    柔性衬底；
    缓冲层，形成于所述柔性衬底上；
    薄膜晶体管层，形成于所述缓冲层上；
    OLED发光层，形成于所述薄膜晶体管层上；
    封装层，所述封装层包括依次设置在所述OLED发光层上的第一无机层、第一有机层、第二无机层以及第二有机层；其中，
    所述第一无机层包括具有至少两个凸起的第一顶面，所述第一顶面背离所述OLED发光层；
    所述第二无机层包括具有至少两个凸起的第二顶面，所述第二顶面背离所述OLED发光层。
  10. 根据权利要求9所述的柔性OLED显示面板，其中，所述柔性衬底包括依次设置的第一聚酰亚胺层、第一阻挡层、第二聚酰亚胺层、第二阻挡层。
  11. 根据权利要求10所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第二聚酰亚胺层设置有至少两个第一通孔，所述第二阻挡层通过所述第一通孔与所述第一阻挡层接触。
  12. 根据权利要求9所述的柔性OLED显示面板，其中，所述缓冲层包括依次设置在柔性衬底上的第一缓冲层、第二缓冲层。
  13. 根据权利要求12所述的柔性OLED显示面板，其中，所述第一缓冲层包括具有至少两个凸起的第五顶面，所述第五顶面背离所述柔性衬底。
  14. 根据权利要求12所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第一缓冲层设置有至少两个第二通孔，所述第二缓冲层通过所述第二通孔与所述柔性衬底接触。
  15. 根据权利要求14所述的柔性OLED显示面板，其中，所述薄膜晶体管层包括依次设置在所述缓冲层上的第一栅极绝缘层、第二栅极绝缘层、层间绝缘层、平坦化层、像素定义层。
  16. 根据权利要求15所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第二栅极绝缘层包括具有至少两个凸起的第六顶面，所述第六顶面背离所述柔性衬底；位于所述弯折区域内的所述平坦化层包括具有至少两个凸起的第七顶面，所述第七顶面背离所述柔性衬底。
  17. 根据权利要求15所述的柔性OLED显示面板，其中，位于所述弯折区域内的所述第一栅极绝缘层设置有至少两个第三通孔，所述第二栅极绝缘层通过所述第三通孔与所述缓冲层接触；位于所述弯折区域内的所述层间绝缘层设置有至少两个第四通孔，所述平坦化层通过所述第四通孔与所述第二栅极绝缘层接触。
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