WO2020262211A1 - 合成砥石 - Google Patents
合成砥石 Download PDFInfo
- Publication number
- WO2020262211A1 WO2020262211A1 PCT/JP2020/024052 JP2020024052W WO2020262211A1 WO 2020262211 A1 WO2020262211 A1 WO 2020262211A1 JP 2020024052 W JP2020024052 W JP 2020024052W WO 2020262211 A1 WO2020262211 A1 WO 2020262211A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- abrasive
- synthetic grindstone
- wafer
- spherical filler
- synthetic
- Prior art date
Links
- 239000004575 stone Substances 0.000 title abstract 2
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- 239000000945 filler Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011230 binding agent Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims abstract description 21
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 9
- 239000000741 silica gel Substances 0.000 claims abstract description 9
- 229910021485 fumed silica Inorganic materials 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000001913 cellulose Substances 0.000 claims abstract description 3
- 229920002678 cellulose Polymers 0.000 claims abstract description 3
- 239000007779 soft material Substances 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 3
- 238000005498 polishing Methods 0.000 abstract description 13
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000011163 secondary particle Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a synthetic grindstone for gliding the surface of a work piece such as a silicon wafer.
- the surface of a silicon wafer which is a substrate for a semiconductor element, is generally processed by slicing a silicon single crystal ingod to a mirror surface through several steps such as a wrapping step, an etching step, and a polishing step.
- a wrapping step dimensional accuracy such as parallelism and flatness and shape accuracy are obtained.
- the etching step the work-altered layer formed in the wrapping step is removed.
- the polishing step a wafer having a mirror surface level roughness is formed while maintaining good shape accuracy by chemical mechanical polishing (hereinafter referred to as “CMP”).
- CMP chemical mechanical polishing
- a polishing process equivalent to this is also used to remove damage in the grinding process called back grind in the post-semiconductor process.
- CMG dry chemical mechanical grinding
- the main component of the synthetic grindstone is an oxide such as cerium oxide or silica as an abrasive.
- a thermosetting resin such as a phenol resin or an epoxy resin, or a thermoplastic resin having high heat resistance is also used.
- the above-mentioned synthetic grindstone had the following problems. That is, as the CMG process progresses, the polishing agent gradually falls off from the polishing action surface of the synthetic grindstone on the work piece, and the polishing action surface becomes smooth. For this reason, in terms of polishing action, the chances of contact between the resin binder and the work piece increase, and as a result, the contact pressure between the polishing agent and the work material decreases, and the processing efficiency drops significantly, while especially processing. When performing dry processing with the aim of improving the rate, there is a problem that frictional heat becomes excessive and scratches occur due to burning or entrainment of abrasive sludge.
- the present invention has been made to solve the above problems, and even if the processing progresses, the contact pressure between the abrasive and the work piece is sufficiently maintained to maintain the processing efficiency, and the resin bond is formed. It is an object of the present invention to provide a synthetic grindstone capable of preventing deterioration of the quality of the work surface and occurrence of scratches by suppressing the contact area between the agent and the work object to a certain level or less.
- the synthetic grindstone according to the present embodiment has a chemical mechanical grinding action on the work material, and has an abrasive having an average particle diameter of less than 5 ⁇ m, a spherical filler having an average particle diameter larger than that of the abrasive, and the polishing. It includes a resin binder that integrally binds the agent and the spherical filler.
- the contact pressure between the abrasive and the work piece is sufficiently maintained to maintain the processing efficiency, and the contact area between the resin binder and the work piece is suppressed to a certain level or less to work. It is possible to prevent deterioration of the quality of the physical surface and occurrence of scratches.
- Explanatory drawing which shows the structure of the synthetic grindstone.
- Explanatory drawing which magnifies and shows the synthetic grindstone with an electron microscope.
- FIG. 1 to 4 are diagrams showing an embodiment of the present invention.
- W indicates a silicon wafer (work piece) to be ground.
- the CMG device 10 includes a rotary table mechanism 20 that supports the wafer W and a grindstone support mechanism 30 that supports the synthetic grindstone 100 described later.
- the CMG device 10 constitutes a part of the wafer processing device.
- the wafer W is carried in and out of the CMG device 10 by a transfer robot or the like.
- the rotary table mechanism 20 includes a table motor 21 arranged on the floor surface, a table shaft 22 arranged so as to project upward from the table motor 21, and a table 23 attached to the upper end of the table shaft 22. ..
- the table 23 has a mechanism for detachably holding the wafer W to be ground. As a holding mechanism, for example, there is a vacuum suction mechanism.
- the grindstone support mechanism 30 is arranged on the floor surface and has a motor housed therein, and a vertical swing that is supported by the frame 31 and swings in the direction of the arrow in FIG. 1 by the motor in the frame 31. It includes a moving shaft 32, an arm 33 provided at the upper end of the swinging shaft 32 and extending in the horizontal direction, and a grindstone driving mechanism 40 provided on the tip end side of the arm 33.
- the grindstone drive mechanism 40 includes a rotary motor unit 41.
- the rotary motor unit 41 includes a rotary shaft 42 that projects downward.
- An annular wheel holding member 43 is attached to the tip of the rotating shaft 42.
- an annular synthetic grindstone 100 is detachably attached to the wheel holding member 43.
- a bolt is screwed into the screw hole provided in the synthetic grindstone 100 from the wheel holding member 43 side.
- the synthetic grindstone 100 contains 0.2 to 50% by volume of abrasive 101, 20 to 60% by volume of spherical filler 102, and 3 to 25% by volume of resin binder 103. It is formed by volume ratio.
- the shape of the spherical filler 102 is not necessarily limited to a sphere, and if it is a lump, some unevenness and deformation are included.
- the abrasive 101 for example, fumed silica having a particle diameter of 20 nm or less is used.
- the particle diameter refers to the median diameter D50 in the equivalent diameter of the sphere.
- the particle size of the abrasive 101 is preferably less than 5 ⁇ m.
- the reason why the upper limit of the particle size of the abrasive 101 is set to less than 5 ⁇ m will be described even though fumed silica having a particle size of 20 nm or less is used. That is, the particle size of the fine particles is significantly different between the primary particles dispersed in the liquid and the secondary particles in the state of being aggregated in the atmosphere or a solid.
- the primary particles are about 10 to 20 nm, but the secondary particles are about 0.1 to 0.5 ⁇ m.
- the upper limit of the particle size of the abrasive it is preferable to specify the upper limit of the particle size of the secondary particles in consideration of the fact that both the primary particles and the secondary particles are mixed. ..
- fumed silica there are various types of fine particles (cerium oxide, chromium oxide, ferric oxide, alumina / silicon carbide, etc.) as described later, and the upper limit is based on the particle size of the secondary particles. I set a value.
- the volume ratio of the abrasive 101 may be about 0.2 to 1%.
- spherical filler 102 spherical silica gel having a particle diameter of 20 ⁇ m is used. Spherical silica gel is a porous body of silica.
- resin binder 103 for example, a phenol resin or ethyl cellulose is used.
- the abrasive 101, the spherical filler 102, and the resin binder 103 having the above-mentioned ratios are dissolved in a MEK (methyl ethyl ketone) solvent, stirred, and then dried in the air.
- MEK methyl ethyl ketone
- the dried product is crushed into powder, which is filled in a mold and pressure-molded at 180 ° C. to form the powder.
- the abrasive 101 and the resin binder 103 form a base material M, and the spherical filler 102 is dispersed in the base material M.
- the degree of binding of the resin binder 103 may be adjusted, or finer particles or fibers having a smaller wire diameter than the abrasive 101 may be added in order to improve the tissue dispersibility.
- the abrasive 101 made of fumed silica is equivalent to or softer than the wafer or its oxide with respect to the wafer W containing silicon as a main component.
- the spherical filler 102 made of spherical silica gel is homogeneous or soft with the wafer or its oxide.
- the resin binder 103 made of cellulose is homogeneous or soft with respect to the abrasive 101.
- the volume ratio of the synthetic grindstone 100 described above was determined as follows. That is, if the abrasive 101 is less than 0.2% by volume, the processing efficiency is lowered, and if it exceeds 50% by volume, it becomes difficult to mold the grindstone. Therefore, the volume ratio of the abrasive 101 is preferably 0.2 to 50%.
- the volume ratio of the spherical filler 102 is preferably 20 to 60%, more preferably 50 to 60%.
- the volume ratio of the resin binder 103 is preferably 3 to 25% by volume.
- the synthetic grindstone 100 configured in this way is attached to the CMG device 10 and grinds the wafer W as follows. That is, the synthetic grindstone 100 is attached to the wheel holding member 43. Next, the wafer W is attached to the table 23 by the transfer robot.
- the table motor 21 is driven to rotate the table 23 in the direction of the arrow in FIG.
- the rotary motor unit 41 is driven to rotate the wheel holding member 43 and the synthetic grindstone 100 in the direction of the arrow in FIG.
- the peripheral speed of the synthetic grindstone 100 is rotated at, for example, 600 m / min, and the composite grindstone 100 is pressed toward the wafer W side at a processing pressure of 300 g / cm 2 .
- the swing shaft 32 is swung in the direction of the arrow in FIG. By interlocking these, the synthetic grindstone 100 and the wafer W slide.
- FIG. 3 shows the relationship between the synthetic grindstone 100 and the wafer W at this time. Since the spherical filler 102 has a larger average particle size than the abrasive 101, the synthetic grindstone 100 being processed and the wafer W almost come into contact with each other through the apex of the spherical filler 102. That is, since the spherical filler 102 exists between the base material M of the synthetic grindstone 100 and the wafer W, the base material M and the wafer W do not come into direct contact with each other, and a constant gap S is generated.
- the gap S promotes circulation of the air near the surface of the wafer W with the outside air, and cools the processed surface. Further, the sludge generated by the abrasive 101 is discharged from the wafer W to the outside through the gap S, and the surface of the wafer W can be prevented from being damaged. As a result, it is possible to prevent the surface of the wafer W from being burnt or scratched due to frictional heat.
- the surface of the wafer W is ground flat and to a predetermined surface roughness by the synthetic grindstone 100.
- the contact pressure between the abrasive 101 and the wafer W is sufficiently maintained to maintain the processing efficiency even when the processing progresses, and the resin binder 103 By suppressing the direct contact between the wafer and the wafer W, it is possible to prevent the quality of the wafer W from deteriorating and the occurrence of scratches.
- the material constituting the synthetic grindstone 100 is not limited to the above-mentioned material. That is, as the abrasive 101, silica or cerium oxide can be applied when the work material is silicon, and chromium oxide / ferric oxide can be applied when the work material is sapphire. In addition, alumina and silicon carbide can also be used as applicable abrasives depending on the type of work material.
- silica gel, carbon and their porous bodies such as silica gel and activated carbon can be applied.
- the hollow balloon used as a pore-forming agent is unsuitable because it cracks during processing and causes scratches.
- thermoplastic resins such as ethyl cellulose can also be applied.
- thermoplastic resin any resin having a relatively high softening point of 120 ° C. or higher and little elongation can be used.
- the present invention is not limited to the above embodiment, and can be variously modified at the implementation stage without departing from the gist thereof.
- each embodiment may be carried out in combination as appropriate, in which case the combined effect can be obtained.
- the above-described embodiment includes various inventions, and various inventions can be extracted by a combination selected from a plurality of disclosed constituent requirements. For example, even if some constituent requirements are deleted from all the constituent requirements shown in the embodiment, if the problem can be solved and the effect is obtained, the configuration in which the constituent requirements are deleted can be extracted as an invention.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (8)
- 被削材を化学機械研削する合成砥石において、
前記被削材に対し化学機械研削作用を有し、粒子径が5μmより小さい研磨剤と、
前記被削材またその酸化物と同質又は軟質の材料で形成され、前記研磨剤より粒子径が大きい球状充填剤と、
前記研磨剤と前記球状充填剤を一体的に結合する樹脂結合剤とを備えている合成砥石。 - 前記研磨剤は、前記被削材またはその酸化物と同質又は軟質の材料である請求項1に記載の合成砥石。
- 前記研磨剤の体積比は、0.2~50%、
前記球状充填剤の体積比は、20~60%、
前記樹脂結合剤の体積は、3~25体積%である請求項1に記載の合成砥石。 - 前記球状充填剤の体積比は、30~60%である請求項3に記載の合成砥石。
- 前記研磨剤は、シリカ、酸化セリウム、酸化クロム、酸化第二鉄、アルミナ、炭化ケイ素のいずれか又は混合物である請求項1に記載の合成砥石。
- 前記球状充填剤は、シリカ、カーボン、シリカゲル、活性炭のいずれか又は混合物である請求項1に記載の合成砥石。
- 前記樹脂結合剤は、熱硬化性樹脂、熱可塑性樹脂のいずれか又は混合物である請求項1に記載の合成砥石。
- 前記被削材はシリコンを主成分とし、
前記研磨剤はヒュームドシリカであり、
前記球状充填剤は球状シリカゲルであり、
前記樹脂結合剤はセルロースである請求項1に記載の合成砥石。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202080041842.5A CN113950390B (zh) | 2019-06-27 | 2020-06-19 | 合成磨石 |
EP20832060.6A EP3991915A4 (en) | 2019-06-27 | 2020-06-19 | SYNTHETIC GRINDING STONE |
KR1020217040205A KR102614442B1 (ko) | 2019-06-27 | 2020-06-19 | 합성 지석 |
US17/499,238 US20220023997A1 (en) | 2019-06-27 | 2021-10-12 | Synthetic grindstone |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019120270A JP6779540B1 (ja) | 2019-06-27 | 2019-06-27 | 合成砥石 |
JP2019-120270 | 2019-06-27 |
Related Child Applications (1)
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KR102614442B1 (ko) | 2023-12-14 |
KR20220006105A (ko) | 2022-01-14 |
CN113950390B (zh) | 2023-03-31 |
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