TWI811552B - 合成磨石 - Google Patents
合成磨石 Download PDFInfo
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- TWI811552B TWI811552B TW109120902A TW109120902A TWI811552B TW I811552 B TWI811552 B TW I811552B TW 109120902 A TW109120902 A TW 109120902A TW 109120902 A TW109120902 A TW 109120902A TW I811552 B TWI811552 B TW I811552B
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- 239000004575 stone Substances 0.000 title claims description 6
- 239000000945 filler Substances 0.000 claims abstract description 29
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- 239000000463 material Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 22
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- 239000000377 silicon dioxide Substances 0.000 claims description 6
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- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
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- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Computer Hardware Design (AREA)
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- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
一種合成磨石，係對晶圓進行化學機械磨削者，其具備：研磨劑，其對晶圓具有化學機械磨削作用，且粒徑小於5μm，並以煙化二氧化矽作為主成分；球狀填充劑，其藉由與晶圓同質或軟質之材料形成，且粒徑大於研磨劑，並以球狀矽膠作為主成分；及樹脂結合劑，其一體性結合研磨劑與球狀填充劑，並以纖維素作為主成分。
Description
發明領域
本發明是有關於一種用以對矽晶圓等被削物之表面進行研磨加工的合成磨石。
背景技術
半導體製造領域中，構成半導體元件基板的矽晶圓之表面加工，一般會將已將矽單晶鑄錠切片的晶圓，經由研光步驟、蝕刻步驟、拋光步驟等數階段之步驟精加工成鏡面。在研光步驟中獲得平行度、平坦度等尺寸精度、形狀精度。接著，在蝕刻步驟中去除於研光步驟中產生的加工變質層。再者，於拋光步驟中，藉由化學機械研磨(以下稱作「CMP」)，形成在維持良好形狀精度後具有鏡面等級之表面粗糙度的晶圓。又，與此同等的拋光步驟，亦可運用在去除半導體後段步驟中被稱作背磨的磨削加工之損傷時。
近年來運用的方法是進行利用乾式化學機械磨削(以下稱作「CMG」)的表面加工以取代拋光步驟(例如參照專利文獻1)。CMG步驟中使用已藉由硬質樹脂等樹脂結合劑將研磨劑(磨粒)固定化的合成磨石。又，一邊使晶圓及合成磨石旋轉，一邊將合成磨石按壓於晶圓上(例如參照專利文獻2)。晶圓表面之凸部會藉由與合成磨石之摩擦而被加熱、氧化然後變脆並剝落。如此一來，只有晶圓之凸部會被磨削並且平坦化。
合成磨石之主成分在例如被削物為矽晶圓時，會運用氧化鈰或二氧化矽這些氧化物作為研磨劑。又，樹脂結合劑除了酚樹脂或環氧樹脂這些熱硬化性樹脂外，也會運用高耐熱性的熱塑性樹脂。
先前技術文獻
專利文獻
專利文獻1：日本專利4573492號公報
專利文獻2：日本特開2004-87912號公報
發明概要
發明欲解決之課題
上述合成磨石會有以下問題。即，若進行CMG步驟，則研磨劑會從合成磨石之對被削物的研磨作用面一點一點地脫落，研磨作用面會逐漸變得平滑。因此，研磨作用面上樹脂結合劑與被削物之接觸機會增加，其結果為研磨劑與被削材間的接觸壓力降低，加工效率明顯降低，另一方面，尤其是在以加工率之提升為目標而進行乾式加工時，摩擦熱會變得過大，會有產生燒傷或捲入研磨汙泥所致之刮痕的問題。
故，本發明是為解決上述課題而成者，目的在提供一種合成磨石，該合成磨石即便持續進行加工，亦可充分地維持研磨劑與被削物之接觸壓力而維持加工效率，並且將樹脂結合劑與被削物之接觸面積抑制在一定值以下，藉此可防止被削物面之品質降低及刮痕的產生。
用以解決課題之手段
本實施形態之合成磨石具備：研磨劑，其對前述被削材具有化學機械磨削作用，且平均粒徑小於5μm；球狀填充劑，其平均粒徑大於前述研磨劑；及樹脂結合劑，其一體性結合前述研磨劑與前述球狀填充劑。
發明效果
即便持續進行加工，亦可充分地維持研磨劑與被削物之接觸壓力而維持加工效率，並且將樹脂結合劑與被削物之接觸面積抑制在一定值以下，藉此可防止被削物面之品質降低及刮痕的產生。
用以實施發明之形態
圖1~圖4所示者為本發明一實施形態。另，該等圖中，W表示成為磨削對象的矽晶圓(被削物)。如圖1所示，CMG裝置10具備：旋轉平台機構20，其支持晶圓W；及磨石支持機構30，其支持後述合成磨石100。CMG裝置10構成晶圓處理裝置的一部分。於CMG裝置10中，晶圓W可利用搬送機器人等搬入、搬出。
旋轉平台機構20具備：平台馬達21，其配置於地面上；平台軸22，其自該平台馬達21朝上方突出而配置；及平台23，其安裝於該平台軸22之上端。平台23具有將磨削對象之晶圓W保持為可自由裝卸的機構。保持機構例如包括真空吸附機構。
磨石支持機構30具備：架台31，其配置於地面上，同時於內部收納有馬達；垂直方向之搖動軸32，其支持於該架台31上，並利用架台31內的馬達朝圖1中箭頭方向搖動；臂部33，其設置於該搖動軸32之上端，並朝水平方向延伸設置；及磨石驅動機構40，其設置於該臂部33之前端側。
磨石驅動機構40具備旋轉馬達部41。旋轉馬達部41具備朝下方突出的旋轉軸42。於旋轉軸42之前端部安裝有圓環狀之輪保持構件43。於輪保持構件43上，如圖2所示，圓環狀之合成磨石100安裝成可自由裝卸。裝設合成磨石100時，從輪保持構件43側將螺栓擰入已設置於合成磨石100的螺孔來裝設。
如圖3所示，合成磨石100係將0.2~50體積%的研磨劑101、20~60體積%的球狀填充劑102及3~25體積%的樹脂結合劑103利用下述體積比率來形成。另，球狀填充劑102之形狀未必限於球體，若為塊狀，則包含些許凹凸或變形。
研磨劑101例如使用粒徑20nm以下的煙化二氧化矽(fumed silica)。另，所謂粒徑，意指球等效直徑下的中位直徑D50。又，研磨劑101之粒徑宜小於5μm。
在此，針對雖然使用粒徑20nm以下的煙化二氧化矽、但卻將研磨劑101之粒徑上限值規定為小於5μm的理由進行說明。即，微粒子在已分散於液中之狀態下的一次粒子以及已於大氣中或固體中凝集之狀態下的二次粒子，其粒徑大不相同。例如上述煙化二氧化矽，一次粒子為10~20nm，但二次粒子卻成為0.1~0.5μm左右。因此，當規定研磨劑之粒徑上限值時，宜考慮一次粒子與二次粒子兩者混雜之情形，以二次粒子之粒徑上限值來規定。另一方面，微粒子除了煙化二氧化矽外，如後述還具有各式種類(氧化鈰、氧化鉻、氧化鐵、氧化鋁、碳化矽等)，可根據其二次粒子之粒徑來訂定上限值。
又，在粒徑成為1μm以下的次微米粒子之情形時，研磨劑101之體積比率亦可為0.2~1%。球狀填充劑102使用粒徑20μm的球狀矽膠。另，球狀矽膠為二氧化矽之多孔質體。樹脂結合劑103例如使用酚樹脂或乙基纖維素。若將依此形成的合成磨石100利用電子顯微鏡來放大顯示，則會成為如圖4所示。
合成磨石100是將上述比率之研磨劑101、球狀填充劑102、樹脂結合劑103溶於MEK(甲基乙基酮)溶劑中，攪拌後於大氣中乾燥。將乾燥後之物質進行粉碎而作成粉體，並將該粉體填充於模具中，於180℃下加壓成型而形成。研磨劑101及樹脂結合劑103會形成母材M，並形成球狀填充劑102分散於該母材M內的狀態。另，亦可調整樹脂結合劑103之結合度，抑或為了提升組織分散性而加入比研磨劑101更細小的粒子或線徑小的纖維質。
又，相對於以矽作為主成分的晶圓W，由煙化二氧化矽構成的研磨劑101係與晶圓或其氧化物同等或軟質。又，相對於研磨劑101，由球狀矽膠構成的球狀填充劑102係與晶圓或其氧化物同質或軟質。再者，相對於研磨劑101，由纖維素構成的樹脂結合劑103為同質或軟質。
另，上述合成磨石100中的體積比率如下述般來決定。即，若研磨劑101小於0.2體積%，則加工效率降低，若大於50體積%，則磨石之成型會變得困難。故，研磨劑101之體積比宜為0.2~50%。
又，當球狀填充劑102小於20體積%時，會有防止磨面平滑化之效果薄弱的問題。若球狀填充劑102之體積比率變大，則可高度維持加工效率，同時能防止晶圓W之品質降低及刮痕產生的效果大，因此宜為30體積%以上。然而，若大於60體積%，則磨石成型會變得困難。故，球狀填充劑102之體積比宜為20~60%，若為50~60%則更為理想。
再者，樹脂結合劑103若其比率減少，則加工效率提升，但若小於3體積%，則成型會變得困難，合成磨石100之磨損速度加快。若樹脂結合劑103大於25體積%，則磨石結合度會大幅上升，加工中的磨損消失，因此，即便有前述球狀填充劑，亦容易產生磨面平滑化。故，樹脂結合劑103之體積比宜為3~25體積%。
依此構成的合成磨石100會安裝於CMG裝置10，並如下述般來磨削晶圓W。即，將合成磨石100安裝於輪保持構件43上。接著，利用搬送機器人將晶圓W安裝於平台23上。
其次，驅動平台馬達21，使平台23朝圖1中箭頭方向旋轉。又，驅動旋轉馬達部41，使輪保持構件43及合成磨石100朝圖1中箭頭方向旋轉。例如使合成磨石100以600m/min之周速旋轉，同時以加工壓力300g/cm2
朝晶圓W側按壓。再者，使搖動軸32朝圖1中箭頭方向搖動。藉由該等連動，合成磨石100與晶圓W會滑動。
圖3中顯示此時的合成磨石100與晶圓W之關係。球狀填充劑102之平均粒徑大於研磨劑101，因此，加工中的合成磨石100與晶圓W幾乎透過球狀填充劑102之頂點來接觸。即，於合成磨石100之母材M與晶圓W間存在有球狀填充劑102，因此，母材M與晶圓W不會直接接觸，並且產生一定之間隙S。
若於球狀填充劑102與晶圓W接觸的狀態下開始加工，則外力會作用於母材M。在該外力連續作用下，樹脂結合劑103會鬆弛，研磨劑101會從母材M脫落。已游離的研磨劑101於合成磨石100與晶圓W之間隙中會以吸附於球狀填充劑102的狀態存在於加工界面。故，加工中的研磨劑101與晶圓W幾乎是透過球狀填充劑102之頂點來接觸。因此，研磨劑101與晶圓W的實際接觸面積會大幅縮小，在加工點的作用壓力提高。故，可於高加工效率下進行磨削加工。
另一方面，藉由間隙S，可促進晶圓W表面附近的空氣與外部空氣之循環，加工面會冷卻。又，因研磨劑101而產生的汙泥透過間隙S自晶圓W排出至外部，可防止晶圓W表面損傷。其結果，可防止摩擦熱所致晶圓W表面之燒傷或刮痕。
如此一來，利用合成磨石100，將晶圓W之表面磨削成平坦且具有預定表面粗糙度。
如上述，依據本實施形態之合成磨石100，即便持續進行加工，亦可充分地維持研磨劑101與晶圓W之接觸壓力而維持加工效率，並且抑制樹脂結合劑103與晶圓W之直接接觸，藉此可防止晶圓W之品質降低及刮痕的產生。
另，構成合成磨石100的材料並不限於上述材料。即，作為研磨劑101，在被削材為矽時，可應用二氧化矽或氧化鈰，在被削材為藍寶石時，則可應用氧化鉻、氧化鐵。此外，作為具有可應用性的研磨劑，亦可依照被削材之種類而使用氧化鋁、碳化矽。
球狀填充劑102可應用二氧化矽、碳以及屬於該等之多孔質體的矽膠、活性碳等。另，被運用作為氣孔形成劑的空心體氣球會在加工中破裂而成為刮痕的原因，因此並不適合。
樹脂結合劑103除了酚樹脂、環氧樹脂這些熱硬化性樹脂外，亦可應用像是乙基纖維素這類熱塑性樹脂。在熱塑性樹脂之情形時，只要是軟化點較高到120℃以上且拉伸度少者，便可加以使用。
另，本發明並不限於上述實施形態，實施階段中可於未脫離其要旨之範圍內進行各種變形。又，各實施形態亦可適當地組合而實施，在此情形下可獲得組合效果。再者，上述實施形態中包含有各種發明，藉由選自於所揭示複數個構成要件之組合，可取出各種發明。舉例言之，即便自實施形態所示全體構成要件中刪除數個構成要件，亦可解決課題並獲得效果時，已刪除該構成要件的構造便可取出作為發明。
10:CMG裝置
20:旋轉平台機構
21:平台馬達
22:平台軸
23:平台
30:磨石支持機構
31:架台
32:搖動軸
33:臂部
40:磨石驅動機構
41:旋轉馬達部
42:旋轉軸
43:輪保持構件
100:合成磨石
101:研磨劑
102:球狀填充劑
103:樹脂結合劑
M:母材
S:間隙
W:晶圓
圖1是顯示已裝入本發明一實施形態之合成磨石的CMG裝置之立體圖。
圖2是顯示該合成磨石的立體圖。
圖3是顯示該合成磨石之構造的說明圖。
圖4是利用電子顯微鏡放大顯示該合成磨石的說明圖。
100:合成磨石
101:研磨劑
102:球狀填充劑
103:樹脂結合劑
M:母材
S:間隙
W:晶圓
Claims (7)
- 一種合成磨石，係對被削材利用乾式進行化學機械磨削者，其具備：研磨劑，其對前述被削材具有利用前述乾式之化學機械磨削作用，且粒徑小於5μm；球狀填充劑，其藉由與前述被削材在關於軟硬上為同質或軟質之材料、或與前述被削材之氧化物在關於軟硬上為同質或軟質之材料形成，且粒徑大於前述研磨劑；及樹脂結合劑，其一體性結合前述研磨劑與前述球狀填充劑；前述研磨劑之體積比為0.2~50體積%，前述球狀填充劑之體積比為30~60體積%，前述樹脂結合劑之體積比為3~25體積%。
- 如請求項1之合成磨石，其中前述研磨劑係與前述被削材在關於軟硬上為同質或軟質之材料、或與前述被削材之氧化物在關於軟硬上為同質或軟質之材料。
- 如請求項1之合成磨石，其中前述研磨劑為二氧化矽、氧化鈰、氧化鉻、氧化鐵、氧化鋁、碳化矽中之任一者或混合物。
- 如請求項1之合成磨石，其中前述球狀填充劑為二氧化矽、碳、矽膠中之任一者或混合物。
- 如請求項4之合成磨石，其中前述碳為活性碳。
- 如請求項1之合成磨石，其中前述樹脂結合劑為熱硬化性樹脂、熱塑性樹脂中之任一者或混合物。
- 一種合成磨石，係藉由乾式將以矽作為主成分之被削材進行化學機械磨削者，其具備： 研磨劑之煙化二氧化矽，其對前述被削材具有利用前述乾式之化學機械磨削作用，且粒徑小於5μm；球狀填充劑之球狀矽膠，其粒徑大於前述研磨劑；樹脂結合劑之纖維素，其一體性結合前述研磨劑與前述球狀填充劑；前述研磨劑藉由與前述被削材在關於軟硬上為同質或軟質之材料、或與前述被削材之氧化物在關於軟硬上為同質或軟質之材料形成。
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