JP2008084930A - 半導体ウェーハの加工方法 - Google Patents
半導体ウェーハの加工方法 Download PDFInfo
- Publication number
- JP2008084930A JP2008084930A JP2006260521A JP2006260521A JP2008084930A JP 2008084930 A JP2008084930 A JP 2008084930A JP 2006260521 A JP2006260521 A JP 2006260521A JP 2006260521 A JP2006260521 A JP 2006260521A JP 2008084930 A JP2008084930 A JP 2008084930A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- polishing
- back surface
- thickness
- wheel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract 5
- 238000005498 polishing Methods 0.000 claims abstract description 104
- 239000006061 abrasive grain Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000003014 reinforcing effect Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005247 gettering Methods 0.000 abstract description 10
- 230000002411 adverse Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 238000000227 grinding Methods 0.000 description 14
- 238000005452 bending Methods 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000007767 bonding agent Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
【解決手段】複数のデバイスが表面に形成された半導体ウェーハの裏面を研磨して半導体ウェーハを所望の厚さに形成する半導体ウェーハの加工方法であって、半導体ウェーハの裏面を研磨して厚さを10μm〜100μmに仕上げ、研磨によって半導体ウェーハの裏面に0.05〜0.1μmの厚さの歪み層を残存させる。歪み層を残存させることによってゲッタリング効果が生じて品質への悪影響を防止することができ、研磨により抗折強度の低下を防止することができる。
【選択図】図1
Description
Wa:表面
S:ストリート D:半導体デバイス
W1:デバイス領域 W2:外周余剰領域
Wb:裏面
W3:凹部 100:歪み層
W4:リング状補強部
10:保護部材
1:研磨装置
2:チャックテーブル
20:移動基台 21:ジャバラ
3:研磨手段
30:スピンドル 31:ホイールマウント
32:研磨ホイール 32a:基台 33:研磨砥石
4:研磨送り手段
40:ガイドレール 41:ボールネジ 42:駆動源 43:昇降板
5:研磨ホイール
5a:基台 50:研磨砥石
6:研磨装置
7:研磨ホイール
7a:基台 70:研磨砥石
8:研磨ホイール
8a:基台 80:研磨砥石
Claims (4)
- 複数のデバイスが表面に形成された半導体ウェーハの裏面を研磨して該半導体ウェーハを所望の厚さに形成する半導体ウェーハの加工方法であって、
半導体ウェーハの裏面を研磨して厚さを10μm〜100μmに仕上げ、
該研磨によって該半導体ウェーハの裏面に0.05〜0.1μmの厚さの歪み層を残存させる
半導体ウェーハの加工方法。 - 前記研磨は、粒径が0.01μm〜0.2μmの砥粒を含む砥石を用いて行う請求項1に記載の半導体ウェーハの加工方法。
- 前記複数のデバイスが形成された領域の裏面を研磨し、該領域の外周側にリング状補強部を形成する請求項1または2に記載の半導体ウェーハの加工方法。
- 前記半導体ウェーハはシリコンウェーハである請求項1、2または3に記載の半導体ウェーハの加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006260521A JP4961183B2 (ja) | 2006-09-26 | 2006-09-26 | 半導体ウェーハの加工方法 |
US11/903,041 US7731567B2 (en) | 2006-09-26 | 2007-09-20 | Semiconductor wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006260521A JP4961183B2 (ja) | 2006-09-26 | 2006-09-26 | 半導体ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008084930A true JP2008084930A (ja) | 2008-04-10 |
JP4961183B2 JP4961183B2 (ja) | 2012-06-27 |
Family
ID=39225547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006260521A Active JP4961183B2 (ja) | 2006-09-26 | 2006-09-26 | 半導体ウェーハの加工方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7731567B2 (ja) |
JP (1) | JP4961183B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010021330A (ja) * | 2008-07-10 | 2010-01-28 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4647228B2 (ja) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | ウェーハの加工方法 |
JP2008283025A (ja) * | 2007-05-11 | 2008-11-20 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2009094326A (ja) * | 2007-10-10 | 2009-04-30 | Disco Abrasive Syst Ltd | ウェーハの研削方法 |
JP2009095947A (ja) * | 2007-10-18 | 2009-05-07 | Disco Abrasive Syst Ltd | 研削装置及びウェーハの研削方法 |
JP5081643B2 (ja) * | 2008-01-23 | 2012-11-28 | 株式会社ディスコ | ウエーハの加工方法 |
JP2022133007A (ja) * | 2021-03-01 | 2022-09-13 | 株式会社ディスコ | 被加工物の研削方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08321445A (ja) * | 1995-05-25 | 1996-12-03 | Sumitomo Electric Ind Ltd | マイクロデバイス基板およびマイクロデバイス基板の製造方法 |
JP2004281551A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体基板及びその製造方法、半導体装置及びその製造方法、半導体パッケージ |
JP2005123425A (ja) * | 2003-10-17 | 2005-05-12 | Toshiba Corp | 半導体基板の製造方法、半導体基板及び半導体装置の製造方法 |
JP2005311025A (ja) * | 2004-04-21 | 2005-11-04 | Naoetsu Electronics Co Ltd | シリコンウエーハの製造方法及びそれにより製造されたシリコンウエーハ |
JP2005317846A (ja) * | 2004-04-30 | 2005-11-10 | Disco Abrasive Syst Ltd | 半導体デバイス及び半導体デバイスの加工方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173987A (ja) | 2001-12-04 | 2003-06-20 | Disco Abrasive Syst Ltd | 半導体チップの製造方法 |
WO2004021420A2 (en) * | 2002-08-29 | 2004-03-11 | Massachusetts Institute Of Technology | Fabrication method for a monocrystalline semiconductor layer on a substrate |
JP4860113B2 (ja) * | 2003-12-26 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
JP2007012810A (ja) * | 2005-06-29 | 2007-01-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
-
2006
- 2006-09-26 JP JP2006260521A patent/JP4961183B2/ja active Active
-
2007
- 2007-09-20 US US11/903,041 patent/US7731567B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08321445A (ja) * | 1995-05-25 | 1996-12-03 | Sumitomo Electric Ind Ltd | マイクロデバイス基板およびマイクロデバイス基板の製造方法 |
JP2004281551A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体基板及びその製造方法、半導体装置及びその製造方法、半導体パッケージ |
JP2005123425A (ja) * | 2003-10-17 | 2005-05-12 | Toshiba Corp | 半導体基板の製造方法、半導体基板及び半導体装置の製造方法 |
JP2005311025A (ja) * | 2004-04-21 | 2005-11-04 | Naoetsu Electronics Co Ltd | シリコンウエーハの製造方法及びそれにより製造されたシリコンウエーハ |
JP2005317846A (ja) * | 2004-04-30 | 2005-11-10 | Disco Abrasive Syst Ltd | 半導体デバイス及び半導体デバイスの加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010021330A (ja) * | 2008-07-10 | 2010-01-28 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4961183B2 (ja) | 2012-06-27 |
US20080076329A1 (en) | 2008-03-27 |
US7731567B2 (en) | 2010-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3645528B2 (ja) | 研磨方法及び半導体装置の製造方法 | |
JP4961183B2 (ja) | 半導体ウェーハの加工方法 | |
KR102255728B1 (ko) | 웨이퍼의 가공 방법 | |
JP5916513B2 (ja) | 板状物の加工方法 | |
CN108247528B (zh) | 一种研磨垫的处理方法 | |
JP2010225987A (ja) | ウェーハの研磨方法及び研磨パッド | |
JP4878738B2 (ja) | 半導体デバイスの加工方法 | |
JP2013247132A (ja) | 板状物の加工方法 | |
JP6192778B2 (ja) | シリコンウエーハの加工装置 | |
CN114523340B (zh) | 研磨抛光成套装备、研磨抛光方法 | |
JP5119614B2 (ja) | ウェーハ外周部研削方法 | |
CN101961852B (zh) | 层间介质层的化学机械研磨方法 | |
JP2010205861A (ja) | 積層ウエーハの面取り装置およびそれを用いて積層ウエーハのベベル部、エッジ部を面取り加工する方法 | |
KR20200038424A (ko) | 웨이퍼의 가공 방법 | |
JP6963075B2 (ja) | ウェハの表面処理装置 | |
JP2009269128A (ja) | 研削装置及び研削方法 | |
JP2013235876A (ja) | ウエーハの加工方法 | |
JP2018056500A (ja) | 板状物の加工方法 | |
JP6717706B2 (ja) | ウェハの表面処理装置 | |
JP6843554B2 (ja) | ウェハの表面処理装置 | |
JP7301472B2 (ja) | ウェーハの加工方法 | |
JP2022133007A (ja) | 被加工物の研削方法 | |
JP2023180612A (ja) | 被加工物の研削方法 | |
TW455525B (en) | Method for improving chemical mechanical polishing of tungsten metal layer | |
JP2023114076A (ja) | 被加工物の加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120228 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120326 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4961183 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |