WO2020232827A1 - 显示面板及其制作方法、显示装置 - Google Patents

显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2020232827A1
WO2020232827A1 PCT/CN2019/097964 CN2019097964W WO2020232827A1 WO 2020232827 A1 WO2020232827 A1 WO 2020232827A1 CN 2019097964 W CN2019097964 W CN 2019097964W WO 2020232827 A1 WO2020232827 A1 WO 2020232827A1
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WIPO (PCT)
Prior art keywords
layer
bending area
display panel
protective layer
filling
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Ceased
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PCT/CN2019/097964
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English (en)
French (fr)
Inventor
方亮
丁玎
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/620,508 priority Critical patent/US11043546B2/en
Publication of WO2020232827A1 publication Critical patent/WO2020232827A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel, a manufacturing method thereof, and a display device.
  • OLED Organic electroluminescent display devices
  • the lower bezel Down Design bending area (Pad Bending, referred to as PB), where there are metal traces in the bending area (Metal Line (ML for short) is used for signal transmission.
  • PB Down Design bending area
  • ML Metal Line
  • An organic photoresist is arranged under the metal traces in the bending area. Due to the inherent characteristics of the organic photoresist, when it is filled into the deep holes of the bending area and patterned, the organic photoresist has a taper. The resistance will form a step difference with the dielectric layer (ILD) (that is, the ODH is higher than the height of the upper surface of the ILD), as shown in Figure 1A; the metal traces in the bending area will use a certain concentration of hydrofluoric acid (HF) before film formation For pre-cleaning, hydrofluoric acid will damage the dielectric layer and increase the slope angle at the edge of the organic photoresist, as shown in Figure 1B. Metal traces have poor coverage at the corners of the edge of the organic photoresist, and stress concentration is prone to occur, which will cause holes or abnormal disconnections in the metal traces.
  • ILD dielectric layer
  • HF hydrofluoric acid
  • the object of the present invention is to provide a display panel, a manufacturing method thereof, and a display device.
  • the display panel improves the coverage structure of the metal traces in the bending area, thereby improving the problem of poor metal trace coverage caused by stress concentration at the corners of the organic film layer in the bending area, so as to further reduce the metal traces. A hole or disconnection occurred abnormally.
  • the present invention provides a display panel, the display panel comprising: a flexible substrate on which an inorganic film layer is arranged, and the top of the inorganic film layer includes a dielectric layer,
  • the flexible substrate is divided into a non-bending area and a bending area, the inorganic film layer in the bending area also has a deep hole area, a filling layer fills the deep hole of the deep hole area, and
  • the filling layer protrudes from the upper surface of the dielectric layer;
  • a protective layer is arranged on the dielectric layer, and the protective layer covers a part of the filling layer.
  • the thickness of the protective layer is greater than a threshold thickness.
  • the display panel in the bending area, the display panel further includes a metal wiring layer, and the metal wiring layer is disposed on the filling layer and the protective layer.
  • the protection layer has a groove along a metal wiring direction perpendicular to the metal wiring layer.
  • the protective layer is made of inorganic materials.
  • a manufacturing method using the above-mentioned display panel includes the following steps: (1) providing a flexible substrate, the flexible substrate is divided into a non-bending area and a bending area, An inorganic film layer is formed on the flexible substrate, the top of the inorganic film layer includes a dielectric layer, and the inorganic film layer also has a deep hole area arranged in the bending area; (2) The hole area is etched to form a deep hole with a slope, and the bottom of the deep hole is located on the flexible substrate; (3) the deep hole is filled with organic material to form a filling layer, and the filling layer protrudes The upper surface of the dielectric layer; (4) a protective layer is provided on the dielectric layer, and the protective layer covers part of the filling layer; (5) the protective layer, the dielectric layer and the filling layer Patterning is performed to form contact holes for connecting the active layer and the metal wiring layer in the inorganic film layer in the non-bending area, and to remove part of the protective layer and part of
  • step (5) the same mask is used to pattern the protective layer and dielectric layer of the non-bending area, and the protective layer and filling layer of the bending area, wherein The thickness of the removed part of the filling layer is determined according to the thickness of the dielectric layer in the non-bending area.
  • step (5) two different masks are used to separate the protective layer and dielectric layer of the non-bending area and the protective layer and filling layer of the bending area. Patterning is performed, wherein the thickness of the partially filled layer removed is 10% to 90% of the height difference between the upper surface of the organic film layer and the upper surface of the protective layer.
  • the method further includes: depositing a flat layer on the metal wiring layer, and patterning the flat layer to connect the metal wiring Layer and the contact hole of the pixel electrode layer; forming a pixel electrode layer on the patterned flat layer and patterning; depositing a pixel defining layer and a spacer layer on the patterned pixel electrode layer, and A light-emitting layer is arranged in the opening area of the pixel defining layer.
  • the present invention also provides a display device including the above-mentioned display panel.
  • the advantage of the present invention is that the display panel of the present invention addresses the problem of poor coverage of metal traces in the bending area, and proposes a new structural design by adding a protective layer between the dielectric layer and the metal trace layer.
  • the protective layer can prevent damage to the dielectric layer caused by hydrofluoric acid cleaning, and can reduce the stress concentration at the edge of the organic film layer, thereby improving the coverage of metal traces at the edge of the organic photoresist and reducing the metal Anomalies such as holes and breaks in the wiring, thereby improving the reliability of the display panel.
  • 1A and 1B are a schematic diagram of the structure of the bending area of the existing organic electroluminescence display device and the metal traces of the metal wiring layer in the bending area are removed after pre-cleaning the damage to the dielectric layer Schematic diagram.
  • FIG. 2 is a schematic diagram of the structure of a display panel in an embodiment of the invention.
  • 3A and 3B are structural schematic diagrams from another angle of the display panel in the embodiment of the present invention.
  • FIG. 4 is a flowchart of steps of a manufacturing method of a display panel in an embodiment of the present invention.
  • 5A to 5L are process flow diagrams of the manufacturing method of the display panel in the embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a display device in an embodiment of the invention.
  • the embodiment of the present invention provides a display panel, a manufacturing method thereof, and a display device. The detailed description will be given below.
  • FIG. 2 is a schematic diagram of the structure of a display panel in an embodiment of the invention.
  • 3A and 3B are structural schematic diagrams from another angle of the display panel in the embodiment of the present invention.
  • the present invention provides a display panel 10, the display panel 10 includes: a flexible substrate 21.
  • the material of the flexible substrate 21 adopts polymer materials such as polyimide plastic, polyetheretherketone, or transparent conductive polyester.
  • polyimide (PI) material is adopted, which has high temperature resistance, It has a wide range, no obvious melting point, high insulation performance, and stable dielectric constant. Therefore, it is widely used in the flexible substrate 21.
  • An inorganic film layer 20 is provided on the flexible substrate 21, and the top of the inorganic film layer 20 includes a dielectric layer 29.
  • the inorganic film layer 20 further includes but is not limited to a barrier layer 22, a buffer layer 23, an active layer 24, a gate insulating layer (25, 27), and a gate layer (26, 28).
  • the barrier layer 22 and the buffer layer 23 are used for buffering and protection.
  • the active layer 24 uses excimer laser crystallization technology to achieve polysiliconization of the active layer 24.
  • the gate insulating layer includes a first gate insulating layer 25 and a second gate insulating layer 27.
  • the flexible substrate is divided into a non-bending area A and a bending area B.
  • the non-bending area A refers to the area that does not need to be bent
  • the bending area B refers to the area that needs to be bent.
  • the flexible substrate 21 and the inorganic film layer 20 extend from the non-bending area A to the bending area B, that is, the flexible substrate 21 and the inorganic film layer 20 are also divided into non-bending areas A and bending area B.
  • the non-bending area A further includes a display area C, and the bending area B is disposed on one side of the display area C.
  • the inorganic film layer 20 in the bending area B also has a deep hole area (not marked in the figure), and a filling layer (which is replaced by an organic film layer hereinafter) 32 is filled in the deep hole 31 of the deep hole area.
  • the filling layer 32 protrudes from the upper surface of the dielectric layer 29.
  • the filling layer 32 is an organic material, such as an organic photoresist, so the organic film layer 32 is used in the following to replace the filling layer.
  • the display panel 10 further includes a metal wiring layer 35, and the metal wiring layer 35 is disposed on the filling layer 32 and a protective layer 33.
  • the metal wiring layer 35 refers to the source and drain layer.
  • the metal wiring layer 35 includes a plurality of metal wirings.
  • the organic photoresist with a taper will form a height difference with the dielectric layer 29 (that is, the ODH is higher than the ILD The height of the upper surface); the metal traces in the bending zone B (which can be replaced by the metal trace layer 35) will be cleaned with a certain concentration of hydrofluoric acid (HF) before the film is formed, and the hydrofluoric acid will affect the dielectric
  • HF hydrofluoric acid
  • the layer 29 causes damage and increases the slope angle at the edge of the organic photoresist. Therefore, in the present invention, a protective layer 33 is provided on the dielectric layer 29, and the protective layer 33 covers part of the filling layer 32 .
  • the thickness of the protective layer 33 is greater than a threshold thickness, and the threshold thickness is the thickness at which the hydrogen-containing fluorocarbon will damage the dielectric layer 29.
  • the protective layer 33 not only can the dielectric layer 29 be protected from being damaged by hydrofluoric acid, but also the organic photoresist (that is, the material of the organic film layer 32, the same below) can form a height with the dielectric layer 29.
  • the level difference (L as shown in FIG. 1B) improves the coverage of the metal wiring layer 35 arranged in the bending area B at the edge of the organic film layer 32 (that is, the position where the organic film layer 32 and the dielectric layer 29 intersect) , Thereby further reducing the occurrence of holes or abnormal fractures in the metal traces.
  • the protective layer 33 is made of inorganic materials, for example, including but not limited to silicon dioxide.
  • the protection layer 33 has a groove along the metal wiring direction perpendicular to the metal wiring layer 35. That is to say, in the direction parallel to the metal trace, the protective layer 33 is partially etched in the bending area B, while in the direction perpendicular to the metal trace, the protective layer 33 is completely etched in the bending area B.
  • the etching area of the protective layer 33 in the bending area B satisfies the condition of n>m, 0.1a ⁇ b ⁇ 0.9*a, where m and a are the length and width of the bending area B respectively, and n and b are the length and width of the etching area of the protective layer 33 in the bending area B, as shown in FIG. 3B .
  • the protective layer 33 has good bending performance, thereby further ensuring that it is disposed on the protective layer 33 and the organic film layer 32 The bending resistance of the metal wiring layer 35.
  • etching the protective layer 33 wet etching or dry etching may be used for patterning.
  • a contact hole 34 for connecting the active layer 24 and the metal wiring layer 35 is formed, and the protective layer 33 in the central part is removed in the bending area B.
  • the same mask can be used for the display area C and the bending The area B is patterned, or two different masks are used to pattern the display area C and the bending area B.
  • the protective layer 33 is etched, a part of the organic film layer 32 is removed, which can also reduce the height difference between the upper surface of the organic film layer 32 and the upper surface of the dielectric layer 29.
  • the thickness of the organic film layer 32 with the removed portion is determined according to the thickness of the dielectric layer 29 in the display area C.
  • different masks that is, when patterning the protective layer 33 and the dielectric layer 29 of the non-bending area A and the protective layer 33 and the organic film layer 32 of the bending area B respectively, the part is removed
  • the thickness of the organic film layer 32 is 10% to 90% of the height difference from the upper surface of the organic film layer to the upper surface of the protective layer 33.
  • a protective layer 33 is provided on the dielectric layer 29 to prevent hydrofluoric acid from damaging the dielectric layer 29, and to remove part of the organic film layer 32 to further reduce organic
  • the slope angle at the edge of the film layer 32 reduces the stress concentration at the edge of the organic film layer 32, thereby improving the coverage of metal traces at the edge of the organic film layer 32, reducing metal trace holes and breaks and other abnormalities, thereby increasing The reliability of the display panel 10.
  • FIG. 4 is a flow chart of the manufacturing method of the display panel 10 in an embodiment of the present invention.
  • 5A to 5L are process flow diagrams of the manufacturing method of the display panel 10 in the embodiment of the present invention.
  • the present invention also provides a manufacturing method using the above-mentioned display panel 10.
  • the method includes the following steps:
  • step S410 provide a flexible substrate, the flexible substrate is divided into a non-bending area and a bending area, forming an inorganic film layer 20 on the flexible substrate, the inorganic film
  • the top of the layer 20 includes a dielectric layer 29, and the inorganic film layer 20 also has a deep hole area disposed in the bending area.
  • this step it further includes sequentially depositing and forming a barrier layer 22 and a buffer layer 23 on the flexible substrate 21, and the barrier layer 22 and the buffer layer 23 are used for buffering and protection.
  • an active layer 24 is deposited on the buffer layer 23, the active layer 24 is polysiliconized using excimer laser crystallization technology, and the active layer 24 is patterned using a mask.
  • the first gate insulating layer 25 and the first gate layer 26 are deposited successively, and patterning is achieved through a mask, and ion implantation is performed using the first gate layer 26 as a mask, as shown in FIG. 5C.
  • the second gate insulating layer 27 and the second gate layer 28 are deposited successively, and patterning is achieved through a mask, as shown in FIG. 5D.
  • a dielectric layer 29 is deposited on the second gate layer.
  • Step S420 etching the deep hole region to form a deep hole 31 with a slope, and the bottom of the deep hole 31 is located on the flexible substrate.
  • the deep hole 31 includes a first deep hole 311 and a second deep hole 312, as shown in FIG. 5D.
  • Step S430 Fill the deep hole with organic material to form an organic film layer, and the organic film layer 32 protrudes from the upper surface of the dielectric layer 29;
  • the organic photoresist Since the organic photoresist has a fixed characteristic, it has a certain height difference (the height difference between the upper surface of the organic film layer 32 and the upper surface of the dielectric layer 29) and slope after filling, as shown in FIG. 5E.
  • Step S440 A protective layer is provided on the dielectric layer, and the protective layer covers part of the filling layer.
  • a protective layer 33 is deposited on the dielectric layer 29.
  • the protective layer 33 is made of inorganic materials, such as silicon dioxide.
  • the protective layer 33 has the characteristics of high stress matching and good step coverage, which can prevent hydrofluoric acid from damaging the dielectric layer 29 at the edge of the organic film layer 32, thereby optimizing the stress concentration at the edge of the organic film layer 32, Thus, the coverage of the metal traces in the metal trace layer 35 provided on the protective layer 33 and the organic film layer 32 is improved, as shown in FIG. 5F.
  • Step S450 Pattern the protective layer, the dielectric layer and the organic film layer 32 to form a metal wiring layer in the non-bending area for connecting the active layer 24 in the inorganic film layer 20 35 to the contact hole 34, and remove part of the protective layer and part of the organic film layer 32 in the bending area.
  • the process shown in FIG. 5G can be used, that is, the display area C and the bending area share a mask plate, and patterning is realized at the same time.
  • the thickness of the removed part of the organic film layer 32 at this time is determined according to the thickness of the dielectric layer 29 in the non-bending area A.
  • two different masks can also be used for the non-bending area A.
  • the protective layer 33, the dielectric layer 29, the protective layer 33 and the organic film layer 32 of the bending area are patterned, wherein the thickness of the removed part of the organic film layer 32 is from the upper surface of the organic film layer to the protective layer
  • the height difference of the upper surface of the layer 33 is 10% to 90%.
  • Step S460 Deposit a metal wiring layer 35 on the protective layer 33 and the organic film layer 32, and realize patterning through a mask, as shown in FIG. 5J.
  • Step S470 depositing a flat layer 36 on the metal wiring layer 35, and patterning the flat layer 36 to realize a contact hole for connecting the metal wiring layer 35 and the pixel electrode layer 37, As shown in Figure 5K.
  • Step S480 forming a pixel electrode layer 37 on the patterned flat layer 36, and patterning.
  • the pixel electrode layer 37 is patterned through a mask.
  • step S490 deposit a pixel defining layer 38 and a spacer layer 39 on the patterned pixel electrode layer 37, and disposing a light emitting layer (not shown in the figure) in the opening area of the pixel defining layer Show).
  • a single or double mask is used to achieve patterning, and a light-emitting layer is provided in the opening area of the pixel defining layer 38 to complete the preparation of the light-emitting layer.
  • the present invention also provides a display device 100 including the above-mentioned display panel 10.
  • the specific structure of the display panel 10 will not be repeated here.
  • the advantage of the present invention is that the display panel 10 of the present invention addresses the problem of poor coverage of the metal traces in the bending area, and proposes a new structure design, by interposing the dielectric layer 29 and the metal trace layer 35 A protective layer 33 is added.
  • the protective layer 33 can prevent the damage caused by the cleaning of the dielectric layer 29 by hydrofluoric acid, and can reduce the stress concentration at the edge of the organic film layer 32, thereby improving the metal wiring in the organic film layer 32.
  • the coverage at the edge reduces abnormalities such as metal wiring holes and fractures, thereby improving the reliability of the display panel 10.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明披露了一种显示面板及其制作方法、显示装置。所述显示面板通过对弯折区中的金属走线的覆盖性结构进行改进，从而改善弯折区的有机膜层边缘拐角处应力集中所造成的金属走线覆盖性差的问题，以进一步降低金属走线破洞或断线异常发生。

Description

显示面板及其制作方法、显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种显示面板及其制作方法、显示装置。
 背景技术
有机电致发光显示装置（OLED）以其低功耗、高饱和度、快速响应时间及宽视角等优势逐渐成为显示领域的主流技术，未来在车载、手机、平板、电脑及电视产品上具有广阔的应用空间。
为了实现OLED显示装置的窄边框，通常会在下边框（Down Border，简称DB）处设计弯折区（Pad Bending，简称PB），其中弯折区域中存在金属走线（Metal Line，简称ML）用以进行信号传输。
 技术问题
在弯折区的金属走线下层设置有有机光阻（ODH），由于有机光阻的固有特性，当其填充到弯折区深孔中并图案化后，具有坡角（Taper）的有机光阻会与介电层（ILD）形成段差（即ODH高出ILD上表面高度值），如图1A所示；弯折区的金属走线在成膜前会采用一定浓度氢氟酸（HF）进行前清洗，氢氟酸会对介电层造成损伤，增大有机光阻边缘处的坡角，如图1B所示。金属走线在有机光阻边缘的拐角处覆盖性差，容易发生应力集中，进而造成金属走线发生破洞或断线异常。
有鉴于此，亟需提供一种新型的显示面板，以解决上述问题。
 技术解决方案
本发明的目的在于，提供一种显示面板及其制作方法、显示装置。所述显示面板通过对弯折区中的金属走线的覆盖性结构进行改进，从而改善弯折区的有机膜层边缘拐角处应力集中所造成的金属走线覆盖性差的问题，以进一步降低金属走线破洞或断线异常发生。
根据本发明的一方面，本发明提供了一种显示面板，所述显示面板包括：一柔性基板，在所述柔性基板上设置有一无机膜层，所述无机膜层顶部包括一介电层，所述柔性基板划分为一非弯折区及一弯折区，在所述弯折区的无机膜层还具有一深孔区，一填充层填充于所述深孔区的深孔，且所述填充层突出于所述介电层的上表面；在所述介电层上设置有一保护层，且所述保护层覆盖部分所述填充层。
在本发明的一实施例中，所述保护层的厚度大于一阈值厚度。
在本发明的一实施例中，在所述弯折区，所述显示面板还包括金属走线层，所述金属走线层设置在所述填充层和所述保护层上。
在本发明的一实施例中，所述保护层具有一沿垂直于所述金属走线层的金属走线方向的凹槽。
在本发明的一实施例中，所述保护层采用无机材料制成。
根据本发明的另一方面，一种采用上述显示面板的制作方法，所述方法包括以下步骤：（1）提供一柔性基板，所述柔性基板划分为一非弯折区及一弯折区，在所述柔性基板上形成无机膜层，所述无机膜层顶部包括一介电层，所述无机膜层还具有一设置于所述弯折区的深孔区；（2）对所述深孔区进行刻蚀，形成具有坡度的深孔，所述深孔的底部位于所述柔性基板上；（3）向所述深孔填充有机材料，形成填充层，且所述填充层突出于所述介电层的上表面；（4）在所述介电层上设置有一保护层，且所述保护层覆盖部分所述填充层；（5）对所述保护层、介电层和填充层进行图案化，以在所述非弯折区形成用于连接所述无机膜层中的有源层和金属走线层的接触孔，并且去除所述弯折区的部分保护层和部分填充层；（6）在所述保护层和填充层上沉积一金属走线层，并且通过掩模板实现图案化。
在本发明的一实施例中，在步骤（5）中采用同一掩模板对所述非弯折区的保护层、介电层和所述弯折区的保护层、填充层进行图案化，其中，去除部分填充层的厚度是根据非弯折区的介电层的厚度而决定的。
在本发明的一实施例中，在步骤（5）中，采用两种不同的掩模板分别对所述非弯折区的保护层、介电层和所述弯折区的保护层、填充层进行图案化，其中去除部分填充层的厚度为所述有机膜膜层上表面至所述保护层上表面的高度差的10%至90%。
在本发明的一实施例中，在步骤（6）之后，进一步包括：在金属走线层上沉积一平坦层，并且对所述平坦层进行图案化，以实现用于连接所述金属走线层和所述像素电极层的接触孔；在图案化的平坦层上形成一像素电极层，并且进行图案化；在图案化的像素电极层上沉积一像素界定层和一隔垫物层，并且在所述像素界定层的开口区设置一发光层。
根据本发明的又一方面，本发明还提供一种显示装置，所述显示装置包括上述的显示面板。
 有益效果
本发明的优点在于，本发明所述显示面板通过针对弯折区中的金属走线的覆盖性差的问题，提出一种新型结构设计，通过在介电层和金属走线层之间增加一保护层，所述保护层可以防止氢氟酸对介电层清洗所造成的损伤，并且可以降低有机膜层边缘处的应力集中，从而改善金属走线在有机光阻边缘处的覆盖性，降低金属走线破洞及断裂等异常，进而提高了显示面板的可靠性。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1A和图1B分别是现有有机电致发光显示装置的弯折区的结构示意图及弯折区的金属走线层的金属走线经前清洗后所引起的部分介电层受到损伤被去除的示意图。
图2是本发明一实施例中的显示面板的结构示意图。
图3A和图3B是本发明所述实施例中的显示面板的另一角度的结构示意图。
图4是本发明一实施例中的显示面板的制作方法的步骤流程图。
图5A至图5L是本发明所述实施例中的显示面板的制作方法的工艺流程图。
图6是本发明一实施例中的显示装置的结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等（如果存在）是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。
在本专利文档中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。
本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。
本发明实施例提供一种显示面板及其制作方法、显示装置。以下将分别进行详细说明。
参阅图2、图3A和图3B。图2是本发明一实施例中的显示面板的结构示意图。图3A和图3B是本发明所述实施例中的显示面板的另一角度的结构示意图。
本发明提供了一种显示面板10，所述显示面板10包括：一柔性基板21。所述柔性基板21的材料采用聚酰亚胺塑料、聚醚醚酮或透明导电涤纶等高分子材料，在本实施例中，采用聚酰亚胺（PI）材料，其具有耐高温，使用温度范围广，无明显熔点，高绝缘性能，以及介电常数稳定等特点，因此在柔性基板21中广泛使用。
在所述柔性基板21上设置有一无机膜层20，所述无机膜层20顶部包括一介电层29。所述无机膜层20还包括但不限于阻隔层22、缓冲层23、有源层24、栅极绝缘层(25，27)、栅极层（26，28）。其中，所述阻隔层22和缓冲层23用于充当缓冲和保护作用。所述有源层24是利用准分子激光晶化技术实现有源层24的多晶硅化。在本实施例中，所述栅极绝缘层包括第一栅极绝缘层25和第二栅极绝缘层27。
所述柔性基板划分为一非弯折区A及一弯折区B。参见图3A和图3B所示，所述非弯折区A是指不需要弯折的区域，所述弯折区B是指需要弯折的区域。所述柔性基板21、所述无机膜层20自所述非弯折区A延伸至所述弯折区B，即所述柔性基板21、所述无机膜层20也被划分为非弯折区A及弯折区B。如图3A所示，在所述非弯折区A进一步包括一显示区C，所述弯折区B设置在在所述显示区C的一侧。
在所述弯折区B的无机膜层20还具有一深孔区（图中未标注），一填充层（下文中用有机膜层替代）32填充于所述深孔区的深孔31，且所述填充层32突出于所述介电层29的上表面。在本实施例中，所述填充层32为有机材料，例如有机光阻，因此在下文中用有机膜层32替代填充层。在所述弯折区B，所述显示面板10还包括金属走线层35，所述金属走线层35设置在所述填充层32和一保护层33上。此处金属走线层35即指源漏极层。所述金属走线层35包括多个金属走线。
由于在现有技术中当有机光阻填充到弯折区B的深孔中并图案化后，具有坡角（Taper）的有机光阻会与介电层29形成高度段差（即ODH高出ILD上表面高度值）；弯折区B的金属走线（可以用金属走线层35替代）在成膜前会采用一定浓度的氢氟酸（HF）进行前清洗，氢氟酸会对介电层29造成损伤，增大有机光阻边缘处的坡角，因此，在本发明中，在所述介电层29上设置有一保护层33，且所述保护层33覆盖部分所述填充层32。进一步，所述保护层33的厚度大于一阈值厚度，该阈值厚度为含氢碳氟化物会对介电层29造成损伤的厚度。这样，通过设置保护层33，不仅能够保护介电层29不被氢氟酸损伤，而且能够减小有机光阻（即指有机膜层32的材料，下文相同）会与介电层29形成高度段差（如图1B所示的L），使得设置在弯折区B的金属走线层35在有机膜层32的边缘（即有机膜层32与介电层29相交的位置）覆盖性得到改善，从而进一步降低金属走线的破洞或断裂异常情况的发生。
在本实施例中，所述保护层33采用无机材料制成，例如为包括但不限于二氧化硅。另外，所述保护层33具有一沿垂直于所述金属走线层35的金属走线方向的凹槽。也就是说，在平行于金属走线方向，保护层33在弯折区B内为部分刻蚀，而在垂直于金属走线方向，保护层33在弯折区B内为全部刻蚀。弯折区B的保护层33的刻蚀区域满足条件为n>m, 0.1a<b<0.9*a ，其中m、a分别为弯折区B的长度和宽度，n、b分别为弯折区B的保护层33的刻蚀区域长度和宽度，如图3B所示。通过如此设计，使得当所述显示面板10的弯折区B弯折时，所述保护层33具有良好的弯折性能，从而进一步保障设置在所述保护层33和所述有机膜层32上的金属走线层35的抗弯折能力。
需说明的是，在对所述保护层33进行刻蚀时，可以采用湿法刻蚀或干法刻蚀进行图案化。其中在显示区C，形成用于连接有源层24和金属走线层35的接触孔34，在弯折区B去除中心部分的保护层33，可以使用同一掩模板对显示区C和弯折区B进行图案化，或者采用不同的两个掩模板对显示区C和弯折区B进行图案化。
进一步，在对所述保护层33进行刻蚀时，会去除一部分的有机膜层32，这样也能够减少所述有机膜层32上表面与所述介电层29上表面之间的高度差。当采用同一掩模板（即采用介电层29的掩模板）时，去除部分的有机膜层32的厚度是根据显示区C的介电层29的厚度而确定的。当采用不同的掩模板时，即分别对所述非弯折区A的保护层33、介电层29和所述弯折区B的保护层33、有机膜层32进行图案化时，去除部分的有机膜层32的厚度为所述有机膜膜层上表面至所述保护层33上表面的高度差的10%至90%。
因此，本发明所述显示面板10通过在介电层29上设置一保护层33，用于防止氢氟酸会对介电层29造成损伤，并去除部分有机膜层32，以进一步减小有机膜层32边缘处的坡角，降低有机膜层32边缘处的应力集中，从而改善金属走线在有机膜层32边缘处的覆盖性，降低金属走线破洞及断裂等异常，进而提高了显示面板10的可靠性。
参阅图4、图5A至图5L，所述图4为本发明一实施例中的显示面板10的制作方法的步骤流程图。图5A至图5L是本发明所述实施例中的显示面板10的制作方法的工艺流程图。
本发明还提供一种采用上述显示面板10的制作方法，所述方法包括以下步骤：
如图5A和图5B所示，步骤S410：提供一柔性基板，所述柔性基板划分为一非弯折区及一弯折区，在所述柔性基板上形成无机膜层20，所述无机膜层20顶部包括一介电层29，所述无机膜层20还具有一设置于所述弯折区的深孔区。
在该步骤中，进一步包括在柔性基板21上先后沉积并形成阻隔层22和缓冲层23，所述阻隔层22和缓冲层23用于充当缓冲和保护作用。接着，在缓冲层23上沉积一有源层24，利用准分子激光晶化技术实现有源层24的多晶硅化，并且使用掩模板进行有源层24的图案化。然后，先后沉积第一栅极绝缘层25和第一栅极层26，并且通过掩模板实现图案化，并且以第一栅极层26充当掩模板进行离子植入，如图5C所示。再，先后沉积第二栅极绝缘层27和第二栅极层28，并且通过掩模板实现图案化，如图5D所示。接着，再在第二栅极层上沉积介电层29。
步骤S420：对所述深孔区进行刻蚀，形成具有坡度的深孔31，所述深孔31的底部位于所述柔性基板上。
在弯折区，通过两次掩模板对深孔区进行刻蚀，形成深孔31，所述深孔31包括第一深孔311和第二深孔312，如图5D所示。
步骤S430：向所述深孔填充有机材料，形成有机膜层，且所述有机膜层32突出于所述介电层29的上表面；
对弯折区的深孔填充有机光阻。由于有机光阻具有固定特性，因此，在填充后具有一定高度差（有机膜层32的上表面与所述介电层29上表面之间的高度差）和坡度，如图5E所示。
步骤S440：在所述介电层上设置有一保护层，且所述保护层覆盖部分所述填充层。
在所述介电层29上沉积一保护层33。所述保护层33采用无机材料，例如二氧化硅。所述保护层33具有应力匹配度高，台阶覆盖性好等特点，可以防止氢氟酸对有机膜层32边缘处的介电层29造成损伤，从而优化有机膜层32边缘处的应力集中，从而改善设置在保护层33和有机膜层32上的金属走线层35中的金属走线的覆盖性，如图5F所示。
步骤S450：对所述保护层、介电层和有机膜层32进行图案化，以在所述非弯折区形成用于连接所述无机膜层20中的有源层24和金属走线层35的接触孔34，并且去除所述弯折区的部分保护层和部分有机膜层32。
在此步骤中，可以采用如图5G所示的工艺，即显示区C和弯折区共用一次掩模板，同时实现图案化。此时去除部分有机膜层32的厚度是根据非弯折区A的介电层29的厚度而决定的。当然，在其他部分实施例中，如图5H和图5I所示（图5H和图5I所示的工艺可交换顺序），也可以采用两种不同的掩模板分别对所述非弯折区A的保护层33、介电层29和所述弯折区的保护层33、有机膜层32进行图案化，其中去除部分有机膜层32的厚度为所述有机膜膜层上表面至所述保护层33上表面的高度差的10%至90%。
步骤S460：在所述保护层33和有机膜层32上沉积一金属走线层35，并且通过掩模板实现图案化，如图5J所示。
步骤S470：在金属走线层35上沉积一平坦层36，并且对所述平坦层36进行图案化，以实现用于连接所述金属走线层35和所述像素电极层37的接触孔，如图5K所示。
步骤S480：在图案化的平坦层36上形成一像素电极层37，并且进行图案化。
在此步骤中通过掩模板对像素电极层37进行图案化。
如图5L所示，步骤S490：在图案化的像素电极层37上沉积一像素界定层38和一隔垫物层39，并且在所述像素界定层的开口区设置一发光层（图中未示）。
在此步骤中，采用单次或两次掩模板实现图案化，并且在像素界定层38的开口区设置一发光层，以完成发光层的制备。
根据本发明的又一方面，如图6所示，本发明还提供一种显示装置100，所述显示装置100包括上述显示面板10。所述显示面板10的具体结构在此不再一一赘述。
本发明的优点在于，本发明所述显示面板10通过针对弯折区中的金属走线的覆盖性差的问题，提出一种新型结构设计，通过在介电层29和金属走线层35之间增加一保护层33，所述保护层33可以防止氢氟酸对介电层29清洗所造成的损伤，并且可以降低有机膜层32边缘处的应力集中，从而改善金属走线在有机膜层32边缘处的覆盖性，降低金属走线破洞及断裂等异常，进而提高了显示面板10的可靠性。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (10)

  1. 一种显示面板，其包括：一柔性基板，在所述柔性基板上设置有一无机膜层，所述无机膜层顶部包括一介电层，所述柔性基板划分为一非弯折区及一弯折区，在所述弯折区的无机膜层还具有一深孔区，一填充层填充于所述深孔区的深孔，且所述填充层突出于所述介电层的上表面；在所述介电层上设置有一保护层，且所述保护层覆盖部分所述填充层。
  2. 根据权利要求1所述的显示面板，其中所述保护层的厚度大于一阈值厚度。
  3. 根据权利要求1所述的显示面板，其中在所述弯折区，所述显示面板还包括一金属走线层，所述金属走线层设置在所述填充层和所述保护层上。
  4. 根据权利要求3所述的显示面板，其中所述保护层具有一沿垂直于所述金属走线层的金属走线方向的凹槽。
  5. 根据权利要求1所述的显示面板，其中所述保护层采用无机材料制成。
  6. 一种如权利要求1所述的显示面板的制作方法，其中所述方法包括以下步骤：
    （1）提供一柔性基板，所述柔性基板划分为一非弯折区及一弯折区，在所述柔性基板上形成无机膜层，所述无机膜层顶部包括一介电层，所述无机膜层还具有一设置于所述弯折区的深孔区；
    （2）对所述深孔区进行刻蚀，形成具有坡度的深孔，所述深孔的底部位于所述柔性基板上；
    （3）向所述深孔填充有机材料，形成填充层，且所述填充层突出于所述介电层的上表面；
    （4）在所述介电层上设置有一保护层，且所述保护层覆盖部分所述填充层；
    （5）对所述保护层、介电层和填充层进行图案化，以在所述非弯折区形成用于连接所述无机膜层中的有源层和金属走线层的接触孔，并且去除所述弯折区的部分保护层和部分填充层；以及
    （6）在所述保护层和填充层上沉积一金属走线层，并且通过掩模板实现图案化。
  7. 根据权利要求6所述的方法，其中在步骤（5）中采用同一掩模板对所述非弯折区的保护层、介电层和所述弯折区的保护层、填充层进行图案化，其中，去除部分填充层的厚度是根据非弯折区的介电层的厚度而决定的。
  8. 根据权利要求6所述的方法，其中在步骤（5）中，采用两种不同的掩模板分别对所述非弯折区的保护层、介电层和所述弯折区的保护层、填充层进行图案化，其中去除部分填充层的厚度为所述有机膜膜层上表面至所述保护层上表面的高度差的10%至90%。
  9. 根据权利要求6所述的方法，其中在步骤（6）之后，进一步包括：
    在金属走线层上沉积一平坦层，并且对所述平坦层进行图案化，以实现用于连接所述金属走线层和所述像素电极层的接触孔；
    在图案化的平坦层上形成一像素电极层，并且进行图案化；
    在图案化的像素电极层上沉积一像素界定层和一隔垫物层，并且在所述像素界定层的开口区设置一发光层。
  10. 一种显示装置，其中所述显示装置包括权利要求1所述的显示面板。
PCT/CN2019/097964 2019-05-20 2019-07-26 显示面板及其制作方法、显示装置 Ceased WO2020232827A1 (zh)

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