WO2021003880A1 - 一种柔性显示面板及其制备方法 - Google Patents

一种柔性显示面板及其制备方法 Download PDF

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Publication number
WO2021003880A1
WO2021003880A1 PCT/CN2019/112122 CN2019112122W WO2021003880A1 WO 2021003880 A1 WO2021003880 A1 WO 2021003880A1 CN 2019112122 W CN2019112122 W CN 2019112122W WO 2021003880 A1 WO2021003880 A1 WO 2021003880A1
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WIPO (PCT)
Prior art keywords
layer
insulating layer
flexible substrate
hole
combined
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PCT/CN2019/112122
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English (en)
French (fr)
Inventor
明星
曹中涛
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/624,796 priority Critical patent/US11355574B2/en
Publication of WO2021003880A1 publication Critical patent/WO2021003880A1/zh

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers

Definitions

  • the invention relates to the field of display, in particular to a flexible display panel and a preparation method thereof.
  • OLED can be divided into passive matrix (PM-OLED) and active matrix (AM-OLED) two major categories.
  • Active matrix display panels include flexible folding display panels and rigid display panels.
  • the flexible folding display panel includes low-temperature polysilicon thin film transistors (low temperature polycrystalline silicon thin film transistor, LTPS TFT).
  • the process flow of flexible folding display panels is 10-15 processes, which is 2-3 more mask processes than rigid AMOLED display panels.
  • the flexible folding AMOLED LTPS display panel includes a display area and a non-display area.
  • the additional processes are mainly to use photolithography and dry etching (Dry) processes for inorganic films with poor stress and poor flexibility in the bending area. Etching, and then filling with organic flexible PI material (O-ILD), is conducive to its bending characteristics.
  • Dry dry etching
  • the flexible folding active matrix AMOLED LTPS display panel is divided into a display area and a non-display area.
  • the non-display area includes a first bending area, a bending portion, and a second bending area.
  • the wiring design of the first bending zone and the second bending zone are the same. Both the first wiring 35 is used for changing to the second wiring layer 7, and the second wiring 36 is changed to the second wiring layer.
  • One change line layer 5 Among them, the first wiring 35 is the gate GE1, the second wiring 36 is the gate GE2, the first wiring layer 5 is the source and drain SD1, and the second wiring layer 7 is the source and drain SD2. This can prevent the first wiring layer 35 or the second wiring layer 36 from breaking due to greater stress. Among them, the first wiring layer 35, the second wiring layer 36, the first wiring layer 5, and the second wiring layer The second line change layer 7 is not in the same layer.
  • the first wiring layer 35 is connected to the second wiring layer 8 through the second through hole 38, and the second wiring layer 36 is connected to the first wiring layer 5 through the first through hole 37.
  • the organic insulating layer 4 is provided under the first wiring layer 35, the second wiring layer 36, the first wiring layer 5 and the second wiring layer 7.
  • the user needs to make a first through hole and a second through hole on a substrate, so that the first trace is connected to the second wire change layer through the second through hole, and the second trace is connected to the second through hole through the first through hole.
  • the first changeover layer is connected.
  • both the display area and the non-display area include a flexible substrate 1, a buffer layer 2, a combined insulating layer 3, an interlayer organic insulating layer 4, a first exchange layer 5, a first flat layer 6, and a second exchange layer.
  • a groove 100 is provided in the non-display area, penetrates the combined insulating layer 3 and the buffer layer 2; and is recessed on the upper surface of the flexible substrate 1.
  • the interlayer organic insulating layer 4 includes a filling area 41 and an organic insulating layer 42. The filling area 41 is filled to the groove 100; the organic insulating layer 42 is attached to the combined insulating layer 3 and connected to the filling area 41.
  • the material of the interlayer organic insulating layer 4 is a flexible PI material, which improves the bending characteristics of the non-display area.
  • the non-display area further includes a first wiring layer 35, a second wiring layer 36, a first through hole 37, and a second through hole 38; the first wiring layer 5 is connected to the first through hole through the first through hole.
  • the second wiring layer 36 is connected to the first wiring layer 35 through the second through hole.
  • the first through hole 37 penetrates the organic insulating layer 42 and is recessed in the composite insulating layer 3; the second through hole 38 penetrates the organic insulating layer 42 and is recessed in the composite insulating layer 3; the depth of the first through hole is smaller than that of the second through hole depth.
  • FIG. 3 is a schematic diagram of the structure of section A in FIG. 3;
  • FIG. 5 is a schematic diagram of the structure of section B in FIG. 3. It can be seen from FIG. 4 that the organic insulating layer located around the first through hole includes a bump 111; it can be seen from FIG. 5 that there is no bump 111 in the organic insulating layer far from the through hole. Therefore, the part where the first wire change layer passes through the convex position is prone to a risk of wire breakage.
  • both the first through hole and the second through hole are formed by two digging processes. For example, when making a through hole, first make a CNT hole on the substrate so that the CNT hole is recessed in the composite insulating layer, then deposit an organic insulating layer on the composite insulating layer, and finally on the undried organic insulating layer The opening is a through hole in the organic insulating layer, and the hole is connected to the CNT hole to form a first through hole or a second through hole. After the opening of the undried organic insulating layer, the organic insulating layer at the edge of the opening will be warped.
  • the organic insulating layer includes a plurality of organic insulating layer through holes, and the distance between two adjacent organic insulating layer through holes is very short. Therefore, the organic insulating layer at the edge of the opening is lifted to form at least one protrusion.
  • metal materials are deposited on the organic insulating layer, the upper surface of the filling area and the through holes to form a metal film layer, and a photoresist layer is prepared on the surface of the metal film layer, and then the metal film layer is etched to form the first wire change layer.
  • the first wire change layer passes through the protrusion position, resulting in a large drop, and the organic photoresist solution cannot effectively cover the photoresist layer.
  • the protrusion position is A wire change layer is easy to be carved off, resulting in wire breakage.
  • the purpose of the present invention is to provide a flexible display panel and a preparation method thereof, so as to solve the technical problem that the first wire change layer is prone to breakage and short circuit in the prior art.
  • the present invention provides a display panel including a flexible substrate, a buffer layer, a combined insulating layer, a groove, an organic insulating layer, and a first exchange layer;
  • the buffer layer is provided on one side of the flexible substrate Surface;
  • the combined insulation layer is provided on the surface of the buffer layer away from the flexible substrate;
  • the groove penetrates the combined insulation layer, the buffer layer, and is recessed on the side of the flexible substrate The surface;
  • the organic insulating layer is filled into the groove and attached to the surface of the combined insulating layer on the side away from the flexible substrate;
  • the first wire exchange layer is provided on the organic insulating layer away from the The surface on one side of the flexible substrate extends to the surface of the combined insulation layer on the side away from the flexible substrate.
  • the edge line on one side of the organic insulating layer has a square waveform, a sawtooth waveform, a triangular waveform, and a sine waveform.
  • the combined insulation layer includes a first insulation layer, a second insulation layer, and a combined dielectric layer; the first insulation layer is provided on a surface of the buffer layer on a side away from the flexible substrate; the second insulation layer The insulating layer is arranged on the surface of the first insulating layer away from the flexible substrate; the combined dielectric layer is arranged on the surface of the second insulating layer away from the flexible substrate; wherein, the first wiring The layer is arranged in the second insulating layer; the second wiring layer is arranged in the combined dielectric layer.
  • the display panel further includes a first through hole and a second through hole; the first through hole penetrates the composite dielectric layer; the second through hole penetrates the composite dielectric layer and the second through hole; Two insulating layers; wherein, the first wiring layer is connected to the second wiring layer through the first through hole; the first wiring layer is connected to the first wiring layer through the second through hole Routing layer.
  • the combined dielectric layer includes a first dielectric layer and a second dielectric layer; the first dielectric layer is provided on a surface of the second insulating layer that is away from the flexible substrate; The second dielectric layer is provided on the surface of the first dielectric layer away from the flexible substrate; wherein, the second wiring layer is provided in the first dielectric layer.
  • the display panel further includes a first flat layer, a third through hole, a second wire exchange layer, and a second flat layer; the first flat layer is provided on the first wire exchange layer, and the combination The insulating layer and the organic insulating layer are away from the surface of the flexible substrate; the third through hole penetrates through the first flat layer; the second wire exchange layer is provided on the first flat layer away from the The surface on one side of the flexible substrate is connected to the first wire exchange layer through the third through hole; the second flat layer is provided on the surface of the second wire exchange layer on the side away from the flexible substrate; And the pixel definition layer is arranged on the surface of the second flat layer away from the flexible substrate.
  • the flexible substrate includes a first flexible substrate, a first barrier layer, a second flexible substrate, and a second barrier layer; the first barrier layer is provided on a surface on one side of the first flexible substrate; Two flexible substrates are provided on the surface of the first barrier layer away from the first flexible substrate; the second barrier layer is provided on the surface of the second flexible substrate away from the first flexible substrate.
  • the present invention also provides a method for manufacturing a display panel, including the following steps: a flexible substrate providing step to provide a flexible substrate; a buffer layer preparation step to prepare a buffer layer on the upper surface of the flexible substrate; The layer preparation step is to prepare a composite insulating layer on the upper surface of the buffer layer; the groove preparation step is to prepare a groove, the groove penetrates the composite insulating layer and the buffer layer and is recessed in the flexible The upper surface of the substrate; the organic insulating layer preparation step, the organic material is deposited on the upper surface of the groove and part of the combined insulating layer to form an organic insulating layer; and the first wire exchange layer preparation step, in the organic insulating layer A first wire exchange layer is prepared on the upper surface of the layer and part of the combined insulating layer.
  • the preparation step of the combined insulating layer includes the following steps: a first insulating layer preparation step is to prepare a first insulating layer on the upper surface of the buffer layer; a second insulating layer preparation step is to prepare a first insulating layer on the first insulating layer A second insulating layer is prepared on the surface, wherein the first wiring layer is provided in the second insulating layer; the composite dielectric layer preparation step is to prepare a composite dielectric layer on the upper surface of the second insulating layer, wherein: The second wiring layer is provided in the composite dielectric layer; the first through hole preparation step is to prepare a first through hole, the first through hole penetrates the composite dielectric layer and is connected to the second path Wire layer; and a second through hole preparation step, preparing a second through hole, the second through hole penetrates the combined dielectric layer and the second insulating layer, and is connected to the first wiring layer; wherein The first wiring layer is connected to the second wiring layer through the first through hole; the first wiring layer is connected to the first wiring layer through
  • the manufacturing method of the display panel further includes the following steps: a first flat layer preparation step, a first flat layer is prepared on the upper surface of the first wire exchange layer and the combined insulating layer; and a third through hole
  • the preparation step is to prepare a third through hole which penetrates the first flat layer
  • the second wire change layer preparation step is to prepare a second wire change layer on the upper surface of the first flat layer
  • a second flat layer is prepared on the upper surface of the second wire change layer; wherein, the second wire change layer is connected to the first wire change layer through the third through hole.
  • the technical effect of the present invention is to provide a display panel and a preparation method thereof.
  • the first wire exchange layer is provided on the upper surface of the organic insulating layer and extends to the combined insulating layer, removing the prior art organic insulating layer. On the one hand, it can reduce the problem of wire breakage in the first wire change layer. On the other hand, because the edge line of the first wire change layer is square, sawtooth, triangular, and sine waveform, It is possible to reduce the short-circuit problem of two adjacent wires in the first wire change layer, thereby improving the stability of the display panel.
  • FIG. 1 is a schematic structural diagram of wiring in a bending area of a display panel in the prior art
  • FIG. 2 is a schematic diagram of the structure of a display panel in the prior art
  • FIG. 3 is a schematic diagram of the wiring structure of the first wiring layer in the prior art
  • FIG. 4 is a schematic diagram of the structure of section A in FIG. 3;
  • Fig. 5 is a schematic structural diagram of section B in Fig. 3;
  • FIG. 6 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of the wiring structure of the bending area of the display panel according to the embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a wiring structure of a first wiring layer according to an embodiment of the present invention.
  • Fig. 9 is a schematic structural diagram of section A or section B in Fig. 8;
  • FIG. 10 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention.
  • FIG. 11 is a flowchart of the step of assembling insulating layers according to an embodiment of the present invention.
  • first insulating layer 32 second insulating layer; 33 first dielectric layer; 34 second dielectric layer; 35 first wiring layer;
  • the present invention provides a display panel including a display area and a non-display area.
  • the display area and the non-display area both include a flexible substrate 1, a buffer layer 2, a combined insulating layer 3, an organic insulating layer 4, a first wire exchange layer 5, a first flat layer 6, and a second wire exchange layer 7 and the second flat layer 8.
  • a groove 100 penetrates the combined insulating layer 3 and the buffer layer 2 and is recessed on the upper surface of the flexible substrate.
  • the flexible substrate 1 includes a first flexible substrate 101, a first barrier layer 102, a second flexible substrate 103, and a second barrier layer 104 in sequence.
  • the first flexible substrate 101 and the second flexible substrate 103 are made of polyimide (PI) or other suitable flexible materials.
  • the materials of the first barrier layer 102 and the second barrier layer 104 are inorganic materials, which are used to block water and oxygen intrusion from the outside.
  • the buffer layer 2 is provided on the upper surface of the flexible substrate 1, and the buffer layer 2 can be formed by a chemical vapor deposition technique.
  • the material can be a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a composite film formed by alternately stacking a silicon oxide film and a silicon nitride film.
  • the combined insulation layer 3 includes a first insulation layer 31, a second insulation layer 32 and a combined dielectric layer 33 in sequence.
  • the combined dielectric layer 33 includes a first dielectric layer 331 and a second dielectric layer 332.
  • the materials of the first insulating layer 31, the second insulating layer 32, the first dielectric layer 331, and the second dielectric layer 332 are inorganic insulating materials.
  • the first wiring layer 35 is provided in the second insulating layer 32; the second wiring layer 36 is provided in the first dielectric layer 331. Specifically, the first wiring layer 35 is provided on the upper surface of the first insulating layer 31, and the second wiring layer 36 is provided on the upper surface of the second insulating layer 32.
  • the first wiring layer 35 includes a first gate
  • the second wiring layer 36 includes a second gate 20.
  • the combined insulating layer 3 further includes a first through hole 37 and a second through hole 38.
  • the first through hole 37 penetrates through the second dielectric layer 332 and the first dielectric layer 331; the second through hole 38 penetrates through the second dielectric layer 332, the first dielectric layer 331 and the second insulating layer 32.
  • the groove 100 penetrates the combined insulating layer 3 and the buffer layer 2 and is recessed in the second barrier layer 104.
  • the organic insulating layer 4 fills the groove 100 and is attached to the combined insulating layer 3.
  • the groove 100 includes a first groove and a second groove.
  • the first groove penetrates the combined insulating layer 3 and penetrates the second dielectric layer 34, the first dielectric layer 33, and the second dielectric layer from top to next.
  • the insulating layer 32 and the first insulating layer 31; the second groove penetrates the buffer layer 2 and the second barrier layer 104 in sequence, and is recessed in the second flexible substrate 103.
  • the organic insulating layer 4 is the bending part of the display panel and has good flexibility to achieve the flexible bending performance of the non-display panel.
  • the first wire change layer 5 is provided on the upper surface of the organic insulating layer 4 and extends to the upper surface of the combined insulating layer 3.
  • the first wiring layer 5 is connected to the second wiring layer 36 through the first through hole 37; the first wiring layer 35 is connected to the first wiring layer 5 through the second through hole 38.
  • the first changeover layer 5 includes a first source and drain and a second source and drain. The first source and drain are connected to the second gate through the first through hole 37, and the second source and drain are through the second through hole 38. Connect to the first gate.
  • the first flat layer 6 is provided on the upper surface of the first wire change layer 5, the organic insulating layer 4 and the combined insulating layer 3.
  • the third through hole 61 penetrates the first flat layer 6.
  • the second line changing layer 7, the second flat layer 8, and the pixel definition layer 9 are sequentially arranged on the upper surface of the first flat layer 6.
  • the overall thickness of the organic insulating layer 4 and the first wiring layer 5 is smaller than the thickness of the first flat layer 6, so that the first wiring layer 5 will not exceed the first flat layer 6 and cause corrosion, and then Improve the stability of the display panel.
  • the first wiring layer 35 is connected to the first wire change layer through a second through hole 38, and the first wire change layer 5 is connected to the second wire change layer 7 through a third through hole 61. .
  • the projection of the third through hole 61 on the first wiring layer 35 coincides with the projection of the second through hole 38 on the first wiring layer 35.
  • the second wiring layer 36 is switched to the first wiring layer 5 through the first through hole 37.
  • the first wiring layer 35 is the gate GE1
  • the second wiring layer 36 is the gate GE2
  • the first wiring layer 5 is the source and drain SD1
  • the second wiring layer 7 is the source and drain SD2.
  • the organic insulating layer includes a plurality of through holes in the organic insulating layer, and the distance between two adjacent through holes in the organic insulating layer is very short, and the organic insulating layer at the edge of the opening has protrusions.
  • the drop is large, and the organic photoresist solution cannot effectively cover the photoresist layer.
  • the first wire exchange layer at the convex position is easily etched away, thereby Lead to disconnection. As shown in FIG.
  • the first through hole 37 and the second through hole 38 do not penetrate the organic insulating layer, and the organic insulating layer 4 is covered by the first wire exchange layer 5, which does not form the aforementioned
  • the protrusions effectively solve the disconnection problem caused by the protrusions, thereby improving the stability and yield of the display panel.
  • the organic insulating layer 4 is disposed under a part of the first switching layer, and the edge line on one side of the organic insulating layer 4 has a rectangular waveform.
  • the first wire change layer 5 includes a plurality of SD1 wires, and the multiple SD1 wires are formed in an etching process. Therefore, two adjacent wires are closer together.
  • the edge line on one side of the organic insulating layer is square waveform, sawtooth waveform, triangle waveform, and sine waveform, which can reduce the short circuit problem of two adjacent traces due to etching residue, thereby improving the display panel stability. Further, as long as the edge line on one side of the organic insulating layer has a concave-convex waveform, the problem of short circuit caused by etching residues of two adjacent traces can be reduced.
  • this embodiment removes the bumps, so that the first wire exchange layer 5 is located on the upper surface of the combined insulating layer 3. Therefore, the user is preparing During the process of the first wire exchange layer 5, the organic insulating layer 42 will not be warped badly, and the disconnection failure of the first wire exchange layer 5 will be reduced, and the edge line of the organic insulating layer will be square waveform, The sawtooth waveform, triangle waveform, and sine waveform can reduce the short-circuit problem of two adjacent traces due to etching residue, thereby improving the stability of the display panel.
  • this embodiment also provides a method for manufacturing a display panel, including the following steps S1 to S10.
  • S1 Flexible substrate providing step provides a flexible substrate.
  • a buffer layer is prepared on the upper surface of the flexible substrate.
  • a composite insulating layer is prepared on the upper surface of the buffer layer.
  • the step of preparing the composite insulating layer includes the following steps S31 to S3.
  • a first insulating layer is prepared on the upper surface of the buffer layer.
  • a second insulating layer is prepared on the upper surface of the first insulating layer, wherein the first wiring layer is provided in the second insulating layer.
  • a composite dielectric layer is prepared on the upper surface of the second insulating layer, wherein the second wiring layer is provided in the composite dielectric layer.
  • the first through hole preparation step is to prepare a first through hole, the first through hole penetrates the composite dielectric layer and is connected to the second wiring layer.
  • the second through hole preparation step is to prepare a second through hole.
  • the second through hole penetrates the combined dielectric layer and the second insulating layer and is connected to the first wiring layer; wherein The first wiring layer is connected to the second wiring layer through the first through hole; the first wiring layer is connected to the first wiring layer through the second through hole.
  • the materials of each layer in the combined insulating layer can be the same or different, and those skilled in the art can design according to actual needs, and this embodiment does not limit it.
  • a groove preparation step is to prepare a groove which penetrates the combined insulating layer and the buffer layer and is recessed on the upper surface of the flexible substrate.
  • an organic material is deposited on the upper surface of the groove and part of the combined insulating layer to form an organic insulating layer.
  • the first wire change layer preparation step is to prepare a first wire change layer on the upper surface of the organic insulating layer and part of the combined insulating layer.
  • the first flat layer preparation step is to prepare a first flat layer on the upper surface of the first wire change layer and the combined insulating layer.
  • the third through hole preparation step is to prepare a third through hole, and the third through hole penetrates the first flat layer.
  • the second wire change layer preparation step is to prepare a second wire change layer on the upper surface of the first flat layer.
  • a pixel definition layer is prepared on the upper surface of the second flat layer.
  • the method for manufacturing a display panel provided in this embodiment may also include a light-emitting layer preparation step, an encapsulation layer preparation step, etc., which will not be repeated here.
  • This embodiment provides a method for manufacturing a display panel. Compared with the prior art, the step of preparing through holes in the organic insulating layer is removed, making the manufacturing process simple.
  • the first wire change layer of this embodiment is provided on the upper surface of the organic insulating layer and extends to the combined insulating layer, which removes the through holes in the organic insulating layer of the prior art. On the one hand, it can reduce the first wire change. The wiring in the layer is broken. On the other hand, because the edge line of one side of the first changeover layer is square, sawtooth, triangular, and sine wave, it can reduce the adjacent The two traces have a short circuit problem, thereby improving the stability of the display panel.

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Abstract

一种显示面板及其制备方法，所述显示面板包括柔性基板（1）、缓冲层（2）、组合绝缘层（3）、凹槽（100）、有机绝缘层（4）以及第一换线层（5）。一种显示面板及其制备方法，第一换线层（5）设于所述有机绝缘层（4）上表面，且延伸至所述组合绝缘层（3），去除了现有技术有机绝缘层（4）中的通孔，一方面可以减少第一换线层（5）中的走线发生断线问题，另一方面，由于第一换线层（5）的一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形，可以减少第一换线层（5）中的相邻的两条走线发生短路问题，从而提升显示面板的稳定性。

Description

一种柔性显示面板及其制备方法 技术领域
本发明涉及显示领域，尤其涉及一种柔性显示面板及其制备方法。
 背景技术
OLED可分为无源矩阵（PM-OLED）和有源矩阵（AM-OLED）两大类。有源矩阵显示面板包括柔性折叠显示面板及刚性显示面板。柔性折叠显示面板包括低温多晶硅薄膜晶体管（low temperature polycrystalline silicon thin film transistor，LTPS TFT）。其中，柔性折叠显示面板的工艺流程10-15道工艺，比刚性的AMOLED显示面板多出2-3道掩膜（Mask）工艺。其中，柔性折叠AMOLED LTPS显示面板包括显示区与非显示区，多出的工艺主要是将弯折区里的应力较差、柔韧性不好的无机薄膜用光刻和干刻蚀（Dry）工艺刻蚀，然后填充上有机柔韧性较好的PI材料（O-ILD），有利于其弯折特性。
目前，柔性折叠有源矩阵AMOLED LTPS显示面板被分为显示区与非显示区，非显示区包括第一弯折区、弯折部以及第二弯折区。
如图1所示，第一弯折区与第二弯折区的走线设计相同，都是采用第一走线35换线至第二换线层7，第二走线36换线至第一换线层5。其中，第一走线35为栅极GE1，第二走线36为栅极GE2，第一换线层5为源漏极SD1，第二换线层7为源漏极SD2。这样可以避免第一走线层35或第二走线层36由于应力较大而出现折断的现象，其中，第一走线层35、第二走线层36、第一换线层5以及第二换线层7均不在同一层。第一走线层35通过第二通孔38与第二换线层8连接，第二走线层36通过第一通孔37与第一换线层5连接。图1中，有机绝缘层4设于第一走线层35、第二走线层36、第一换线层5以及第二换线层7的下方。
在实际制程中，用户需要在一基板上制作第一通孔及第二通孔，使得第一走线通过第二通孔与第二换线层连接，第二走线通过第一通孔与第一换线层连接。
如图2所示，显示区与非显示区均包括柔性基板1、缓冲层2、组合绝缘层3、层间有机绝缘层4、第一换线层5、第一平坦层6、第二换线层7以及第二平坦层8。其中，一凹槽100设于所述非显示区，贯穿组合绝缘层3、缓冲层2；且下凹于柔性基板1的上表面。层间有机绝缘层4包括填充区41以及有机绝缘层42。填充区41填充至凹槽100；有机绝缘层42贴附于组合绝缘层3，且连接至填充区41。层间有机绝缘层4的材质为柔韧性较好的PI材料，提升非显示区的弯折特性。
进一步地，所述非显示区还包括第一走线层35、第二走线层36、第一通孔37以及第二通孔38；第一换线层5通过第一通孔连接至第二走线层36以及通过第二通孔连接至第一走线层35。第一通孔37贯穿有机绝缘层42、下凹于组合绝缘层3；第二通孔38贯穿有机绝缘层42、下凹于组合绝缘层3；第一通孔的深度小于第二通孔的深度。
如图3所示，为了能更准确地体现出第一换线层通过第一通孔与第二走线连接的结构示意图，因此，图3中去除了其他部件。其中，图4为图3中截面A的结构示意图；图5为图3中截面B的结构示意图。从图4中可以看出，位于第一通孔周围的有机绝缘层包括一凸起111；从图5可以看出，远离通孔的有机绝缘层不存在凸起111。因此，第一换线层经过凸起位置的部分容易发生断线风险。
在制作工艺中，第一通孔及第二通孔都要通过两道挖孔工艺形成。举例子说明，在制作通孔时，首先在基板上制作一CNT孔，使得CNT孔下凹于组合绝缘层，然后在组合绝缘层上沉积一有机绝缘层，最后在未干燥的有机绝缘层上开孔为有机绝缘层通孔，该孔连通至CNT孔，形成第一通孔或者第二通孔。在未干燥的有机绝缘层开孔后，会导致开孔边缘处的有机绝缘层发生翘起的现象。另外，有机绝缘层包括多个有机绝缘层通孔，而且两个相邻的有机绝缘层通孔的距离很短，因此，在开孔边缘处的有机绝缘层翘起，形成至少一凸起。然而，后续在有机绝缘层、填充区上表面以及通孔内沉积金属材料形成金属膜层，并在金属膜层表面制备光阻层，然后对金属膜层进行蚀刻处理形成第一换线层。需要说明的是，第一换线层经过所述凸起的位置，导致落差较大，有机光阻溶液无法有效覆盖形成光阻层，然而，在蚀刻的过程中，所述凸起位置的第一换线层容易被刻掉，从而导致断线。
 技术问题
本发明的目的在于，本发明提供一种柔性显示面板及其制备方法，以解决现有技术中存在的第一换线层容易出现断线、短路的技术问题。
 技术解决方案
为实现上述目的，本发明提供一种显示面板，包括柔性基板、缓冲层、组合绝缘层、凹槽、有机绝缘层以及第一换线层；所述缓冲层设于所述柔性基板一侧的表面；所述组合绝缘层设于所述缓冲层远离所述柔性基板一侧的表面；所述凹槽贯穿所述组合绝缘层、所述缓冲层，且下凹于所述柔性基板一侧的表面；所述有机绝缘层填充至所述凹槽，且贴附于所述组合绝缘层远离所述柔性基板一侧的表面；所述第一换线层，设于所述有机绝缘层远离所述柔性基板一侧的表面，且延伸至所述组合绝缘层远离所述柔性基板一侧的表面。
进一步地，所述有机绝缘层一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形。
进一步地，所述组合绝缘层包括第一绝缘层、第二绝缘层以及组合介电层；所述第一绝缘层设于所述缓冲层远离所述柔性基板一侧的表面；所述第二绝缘层设于所述第一绝缘层远离所述柔性基板一侧的表面；所述组合介电层设于所述第二绝缘层远离所述柔性基板一侧的表面；其中，第一走线层设于所述第二绝缘层内；第二走线层设于所述组合介电层内。
进一步地，所述的显示面板还包括第一通孔、第二通孔；所述第一通孔贯穿所述组合介电层；所述第二通孔贯穿述组合介电层及所述第二绝缘层；其中，所述第一换线层通过所述第一通孔连接至所述第二走线层；所述第一换线层通过所述第二通孔连接至所述第一走线层。
进一步地，所述组合介电层包括第一介电层、第二介电层；所述第一介电层设于所述第二绝缘层远离所述柔性基板一侧的表面；所述第二介电层设于所述第一介电层远离所述柔性基板一侧的表面；其中，所述第二走线层设于所述第一介电层内。
进一步地，所述的显示面板还包括第一平坦层、第三通孔、第二换线层以及第二平坦层；所述第一平坦层设于所述第一换线层、所述组合绝缘层及所述有机绝缘层远离所述柔性基板一侧的表面；所述第三通孔贯穿所述第一平坦层；所述第二换线层设于所述第一平坦层远离所述柔性基板一侧的表面，且通过所述第三通孔连接至所述第一换线层；所述第二平坦层设于所述第二换线层远离所述柔性基板一侧的表面；以及像素定义层设于所述第二平坦层远离所述柔性基板一侧的表面。
进一步地，所述柔性基板包括第一柔性基板、第一屏障层、第二柔性基板以及第二屏障层；所述第一屏障层设于所述第一柔性基板一侧的表面；所述第二柔性基板设于所述第一屏障层远离所述第一柔性基板一侧的表面；所述第二屏障层设于所述第二柔性基板远离所述第一柔性基板一侧的表面。
为实现上述目的，本发明还提供一种显示面板的制备方法，包括如下步骤，柔性基板提供步骤，提供一柔性基板；缓冲层制备步骤，在所述柔性基板上表面制备一缓冲层；组合绝缘层制备步骤，在所述缓冲层上表面制备一组合绝缘层；凹槽制备步骤，制备一凹槽，所述凹槽贯穿所述组合绝缘层、所述缓冲层，且下凹于所述柔性基板的上表面；有机绝缘层制备步骤，将有机材料沉积于所述凹槽及部分所述组合绝缘层上表面，形成一有机绝缘层；以及第一换线层制备步骤，在所述有机绝缘层及部分所述组合绝缘层上表面制备一第一换线层。
进一步地，所述组合绝缘层制备步骤包括如下步骤，第一绝缘层制备步骤，在所述缓冲层上表面制备一第一绝缘层；第二绝缘层制备步骤，在所述第一绝缘层上表面制备一第二绝缘层，其中，第一走线层设于所述第二绝缘层内；组合介电层制备步骤，在所述第二绝缘层上表面制备一组合介电层，其中，第二走线层设于所述组合介电层内；第一通孔制备步骤，制备一第一通孔，所述第一通孔贯穿所述组合介电层，连接至所述第二走线层；以及第二通孔制备步骤，制备一第二通孔，所述第二通孔贯穿所述组合介电层及所述第二绝缘层，连接至所述第一走线层；其中，所述第一换线层通过所述第一通孔连接至所述第二走线层；所述第一换线层通过所述第二通孔连接至所述第一走线层。
进一步地，所述的显示面板的制备方法还包括如下步骤，第一平坦层制备步骤，在所述第一换线层及所述组合绝缘层上表面制备一第一平坦层；第三通孔制备步骤，制备一第三通孔，所述第三通孔贯穿所述第一平坦层；第二换线层制备步骤，在所述第一平坦层上表面制备一第二换线层；以及第二平坦层制备步骤，在所述第二换线层上表面制备一第二平坦层；其中，所述第二换线层通过所述第三通孔连接至所述第一换线层。
 有益效果
本发明的技术效果在于，提供一种显示面板及其制备方法，第一换线层设于所述有机绝缘层上表面，且延伸至所述组合绝缘层，去除了现有技术有机绝缘层中的通孔，一方面可以减少第一换线层中的走线发生断线问题，另一方面，由于第一换线层的一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形，可以减少第一换线层中的相邻的两条走线发生短路问题，从而提升显示面板的稳定性。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术显示面板的弯折区走线的结构示意图；
图2为现有技术显示面板的结构示意图；
图3为现有技术所述第一换线层走线的结构示意图；
图4为图3中截面A的结构示意图；
图5为图3中截面B的结构示意图；
图6为本发明实施例显示面板的结构示意图；
图7本发明实施例显示面板的弯折区的走线结构示意图；
图8为本发明实施例所述第一换线层走线的结构示意图；
图9为图8中截面A或截面B的结构示意图；
图10为本发明实施例所述显示面板制备方法的流程图；
图11为本发明实施例所述组合绝缘层步骤的流程图。
附图中部分标识如下：
1柔性基板；2缓冲层；3组合绝缘层；4有机绝缘层；5第一换线层；
6第一平坦层；7第二换线层；8第二平坦层；9像素定义层；
31第一绝缘层；32第二绝缘层；33第一介电层；34第二介电层；35第一走线层；
36第二走线层；37第一通孔；38第二通孔；61第三通孔；100凹槽；
101第一柔性基板；102第一屏障层；103第二柔性基板；104第二屏障层；
111凸起。
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，用以举例证明本发明可以实施，这些实施例可以向本领域中的技术人员完整介绍本发明的技术内容，使得本发明的技术内容更加清楚和便于理解。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”等（如果存在）是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。
如图6所示，本发明提供一种显示面板，包括显示区与非显示区。其中，所示显示区与所述非显示区均包括柔性基板1、缓冲层2、组合绝缘层3、有机绝缘层4、第一换线层5、第一平坦层6、第二换线层7以及第二平坦层8。一凹槽100贯穿组合绝缘层3、缓冲层2，且下凹于柔性基板的上表面。
柔性基板1依次包括第一柔性基板101、第一屏障层102、第二柔性基板103以及第二屏障层104。第一柔性基板101和第二柔性基板103采用聚酰亚胺(PI)或者其他合适的柔性材料制作形成。第一屏障层102和第二屏障层104的材质为无机材料，用以阻挡外界的水氧入侵。
缓冲层2设于柔性基板1的上表面，缓冲层2可以采用化学气相沉积技术形成。其材质可以为氧化硅（SiOx）薄膜、氮化硅（SiNx）薄膜或者氧化硅薄膜与氮化硅薄膜交替层叠设置形成的复合薄膜。
组合绝缘层3依次包括第一绝缘层31、第二绝缘层32以及组合介电层33。所述组合介电层33包括第一介电层331以及第二介电层332。其中，第一绝缘层31、第二绝缘层32、第一介电层331以及第二介电层332的材质为无机绝缘材质。其中，第一走线层35设于第二绝缘层32内；第二走线层36设于第一介电层331内。具体地，第一走线层35设于第一绝缘层31的上表面，第二走线层36设于第二绝缘层32的上表面。其中，第一走线层35包括第一栅极，第二走线层36包括第二栅极20。进一步地，组合绝缘层3还包括第一通孔37以及第二通孔38。第一通孔37贯穿于第二介电层332及第一介电层331 ；第二通孔38贯穿于第二介电层332、第一介电层331及第二绝缘层32。
凹槽100贯穿组合绝缘层3、缓冲层2，且下凹于第二屏障层104。有机绝缘层4填充至凹槽100，且贴附于组合绝缘层3。其中，凹槽100包括第一凹槽及第二凹槽，所述第一凹槽贯穿组合绝缘层3，从上至下一次贯穿第二介电层34、第一介电层33、第二绝缘层32、第一绝缘层31；所述第二凹槽依次贯穿缓冲层2、第二屏障层104，且下凹于第二柔性基板103。有机绝缘层4为显示面板的弯折部，具有良好的柔韧性，以实现非显示面板的柔性弯折性能。
第一换线层5设于有机绝缘层4的上表面，且延伸至组合绝缘层3的上表面。第一换线层5通过第一通孔37连接至第二走线层36；第一换线层35通过第二通孔38连接至第一换线层5。其中，第一换线层5包括第一源漏极以及第二源漏极，第一源漏极通过第一通孔37连接至第二栅极，第二源漏极通过第二通孔38连接至第一栅极。
第一平坦层6设于第一换线层5、有机绝缘层4及组合绝缘层3的上表面。第三通孔61贯穿第一平坦层6。第二换线层7、第二平坦层8、像素定义层9依次设于第一平坦层6的上表面。本实施例中，有机绝缘层4与第一走线层5的整体厚度小于第一平坦层6的厚度，不会使第一走线层5超出第一平坦层6而出现腐蚀的现象，进而提升显示面板的稳定性。
如图7所示，第一走线层35通过第二通孔38连接至所述第一换线层，所述第一换线层5通过第三通孔61连接至第二换线层7。其中，第三通孔61在第一走线层35的投影，与第二通孔38在第一走线层35的投影重合。第二走线层36通过第一通孔37换线至第一换线层5。其中，第一走线层35为栅极GE1，第二走线层36为栅极GE2，第一换线层5为源漏极SD1，第二换线层7为源漏极SD2。现有技术中，有机绝缘层包括多个有机绝缘层通孔，而且两个相邻的有机绝缘层通孔的距离很短，且开孔边缘处的有机绝缘层具有凸起，第一换线层经过凸起的位置时，导致落差较大，有机光阻溶液无法有效覆盖形成光阻层，然而，在蚀刻的过程中，所述凸起位置的第一换线层容易被刻掉，从而导致断线。结合图6所示，本实施例中，第一通孔37及第二通孔38没有贯穿所述有机绝缘层，有机绝缘层4被第一换线层5覆盖，不会形成前文所述的凸起，从而有效地解决由所述凸起引发的断线问题，从而提升显示面板的稳定性及良率。
如图8所示，为了能更准确地体现出第一换线层5通过所述第一通孔与所述第二走线连接的结构示意图，因此，图8中去除了其他部件。有机绝缘层4设于部分第一换线层下方，且有机绝缘层4一侧边缘线为矩形波形。需要说明的是，第一换线层5包括多条SD1走线，多条SD1走线是在蚀刻制程中形成的，因此，相邻的两条走线靠得比较近。本实施例中，将所述有机绝缘层一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形，可以减少相邻的两条走线因蚀刻残留发生的短路问题，从而提升显示面板的稳定性。进一步地，只要所述有机绝缘层一侧边缘线只要具有凹凸起伏的波形，就可以减少相邻的两条走线因蚀刻残留发生的短路问题。
如图8~9所示，与现有技术相比（参照3~5），本实施例去除了凸起，使得第一换线层5位于组合绝缘层3的上表面，因此，用户在制备第一换线层5的过程中，不会有机绝缘层42出现翘起不良的现象，减少第一换线层5发生断线故障，以及将所述有机绝缘层一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形，可以减少相邻的两条走线因蚀刻残留发生的短路问题，从而提升显示面板的稳定性。
如图10所示，本实施例还提供一种显示面板制备方法，包括如下步骤S1~S10。
S1柔性基板提供步骤，提供一柔性基板。
S2缓冲层制备步骤，在所述柔性基板上表面制备一缓冲层。
S3组合绝缘层制备步骤，在所述缓冲层上表面制备一组合绝缘层。
如图11所示，所述组合绝缘层制备步骤包括如下步骤S31~S3。S31第一绝缘层制备步骤，在所述缓冲层上表面制备一第一绝缘层。S32第二绝缘层制备步骤，在所述第一绝缘层上表面制备一第二绝缘层，其中，第一走线层设于所述第二绝缘层内。S33组合介电层制备步骤，在所述第二绝缘层上表面制备一组合介电层，其中，第二走线层设于所述组合介电层内。S34第一通孔制备步骤，制备一第一通孔，所述第一通孔贯穿所述组合介电层，连接至所述第二走线层。S35第二通孔制备步骤，制备一第二通孔，所述第二通孔贯穿所述组合介电层及所述第二绝缘层，连接至所述第一走线层；其中，所述第一换线层通过所述第一通孔连接至所述第二走线层；所述第一换线层通过所述第二通孔连接至所述第一走线层。本实施例中，所述组合绝缘层中各层的材质可以相同或者不同，本领域技术人员可以根据实际需求设计，本实施例不做限定。
S4凹槽制备步骤，制备一凹槽，所述凹槽贯穿所述组合绝缘层、所述缓冲层，且下凹于所述柔性基板的上表面。
S5有机绝缘层制备步骤，将有机材料沉积于所述凹槽及部分所述组合绝缘层上表面，形成一有机绝缘层。
S6第一换线层制备步骤，在所述有机绝缘层及部分所述组合绝缘层上表面制备一第一换线层。
S7第一平坦层制备步骤，在所述第一换线层及所述组合绝缘层上表面制备一第一平坦层。
S8第三通孔制备步骤，制备一第三通孔，所述第三通孔贯穿所述第一平坦层。
S9第二换线层制备步骤，在所述第一平坦层上表面制备一第二换线层。
S10第二平坦层制备步骤，在所述第二换线层上表面制备一第二平坦层；其中，所述第二换线层通过所述第三通孔连接至所述第一换线层。
S11像素定义层制备步骤，在所述第二平坦层上表面制备一像素定义层。
本实施例中提供一种显示面板的制备方法除了包括上述步骤之外，还可以包括发光层制备步骤、封装层制备步骤等，在此不再一一赘述。
本实施例提供一种显示面板的制备方法，与现有技术相比，去除了在有机绝缘层中制备通孔的步骤，使得制备工艺简单。另外，本实施例第一换线层设于所述有机绝缘层上表面，且延伸至所述组合绝缘层，去除了现有技术有机绝缘层中的通孔，一方面可以减少第一换线层中的走线发生断线问题，另一方面，由于第一换线层的一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形，可以减少第一换线层中的相邻的两条走线发生短路问题，从而提升显示面板的稳定性。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种显示面板，其中，包括：
    柔性基板；
    缓冲层，设于所述柔性基板一侧的表面；
    组合绝缘层，设于所述缓冲层远离所述柔性基板一侧的表面；
    凹槽，贯穿所述组合绝缘层、所述缓冲层，且下凹于所述柔性基板一侧的表面；
    有机绝缘层，填充至所述凹槽，且贴附于所述组合绝缘层远离所述柔性基板一侧的表面；以及
    第一换线层，设于所述有机绝缘层远离所述柔性基板一侧的表面，且延伸至所述组合绝缘层远离所述柔性基板一侧的表面。
  2. 如权利要求1所述的显示面板，其中，
    所述有机绝缘层一侧边缘线为方形波形、锯齿波形、三角波形、正弦波形。
  3. 如权利要求1所述的显示面板，其中，所述组合绝缘层包括：
    第一绝缘层，设于所述缓冲层远离所述柔性基板一侧的表面；
    第二绝缘层，设于所述第一绝缘层远离所述柔性基板一侧的表面；以及
    组合介电层，设于所述第二绝缘层远离所述柔性基板一侧的表面；
    其中，第一走线层设于所述第二绝缘层内；
    第二走线层设于所述组合介电层内。
  4. 如权利要求3所述的显示面板，其中，还包括：
    第一通孔，贯穿所述组合介电层；以及
    第二通孔，贯穿述组合介电层及所述第二绝缘层；
    其中，所述第一换线层通过所述第一通孔连接至所述第二走线层；
    所述第一换线层通过所述第二通孔连接至所述第一走线层。
  5. 如权利要求3所述的显示面板，其中，
    所述组合介电层包括：
    第一介电层，设于所述第二绝缘层远离所述柔性基板一侧的表面；以及
    第二介电层，设于所述第一介电层远离所述柔性基板一侧的表面；
    其中，所述第二走线层设于所述第一介电层内。
  6. 如权利要求1所述的显示面板，其中，还包括：
    第一平坦层，设于所述第一换线层、所述组合绝缘层及所述有机绝缘层远离所述柔性基板一侧的表面；
    第三通孔，贯穿所述第一平坦层；
    第二换线层，设于所述第一平坦层远离所述柔性基板一侧的表面，且通过所述第三通孔连接至所述第一换线层；
    第二平坦层，设于所述第二换线层远离所述柔性基板一侧的表面；以及
    像素定义层，设于所述第二平坦层远离所述柔性基板一侧的表面。
  7. 如权利要求1所述的显示面板，其中，
    所述柔性基板包括：
    第一柔性基板；
    第一屏障层，设于所述第一柔性基板一侧的表面；
    第二柔性基板，设于所述第一屏障层远离所述第一柔性基板一侧的表面；以及
    第二屏障层，设于所述第二柔性基板远离所述第一柔性基板一侧的表面。
  8. 一种显示面板的制备方法，其中，包括如下步骤：
    柔性基板提供步骤，提供一柔性基板；
    缓冲层制备步骤，在所述柔性基板上表面制备一缓冲层；
    组合绝缘层制备步骤，在所述缓冲层上表面制备一组合绝缘层；
    凹槽制备步骤，制备一凹槽，所述凹槽贯穿所述组合绝缘层、所述缓冲层，且下凹于所述柔性基板的上表面；
    有机绝缘层制备步骤，将有机材料沉积于所述凹槽及部分所述组合绝缘层上表面，形成一有机绝缘层；以及
    第一换线层制备步骤，在所述有机绝缘层及部分所述组合绝缘层上表面制备一第一换线层。
  9. 如权利要求8所述的显示面板的制备方法，其中，
    所述组合绝缘层制备步骤包括如下步骤：
    第一绝缘层制备步骤，在所述缓冲层上表面制备一第一绝缘层；
    第二绝缘层制备步骤，在所述第一绝缘层上表面制备一第二绝缘层，其中，第一走线层设于所述第二绝缘层内；
    组合介电层制备步骤，在所述第二绝缘层上表面制备一组合介电层，其中，第二走线层设于所述组合介电层内；
    第一通孔制备步骤，制备一第一通孔，所述第一通孔贯穿所述组合介电层，连接至所述第二走线层；以及
    第二通孔制备步骤，制备一第二通孔，所述第二通孔贯穿所述组合介电层及所述第二绝缘层，连接至所述第一走线层；
    其中，所述第一换线层通过所述第一通孔连接至所述第二走线层；
    所述第一换线层通过所述第二通孔连接至所述第一走线层。
  10. 如权利要求8所述的显示面板的制备方法，其中，还包括如下步骤：
    第一平坦层制备步骤，在所述第一换线层及所述组合绝缘层上表面制备一第一平坦层；
    第三通孔制备步骤，制备一第三通孔，所述第三通孔贯穿所述第一平坦层；
    第二换线层制备步骤，在所述第一平坦层上表面制备一第二换线层；以及
    第二平坦层制备步骤，在所述第二换线层上表面制备一第二平坦层；
    其中，所述第二换线层通过所述第三通孔连接至所述第一换线层。
PCT/CN2019/112122 2019-07-05 2019-10-21 一种柔性显示面板及其制备方法 WO2021003880A1 (zh)

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