WO2020105199A1 - Capteur de température de résistance - Google Patents

Capteur de température de résistance

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Publication number
WO2020105199A1
WO2020105199A1 PCT/JP2019/003994 JP2019003994W WO2020105199A1 WO 2020105199 A1 WO2020105199 A1 WO 2020105199A1 JP 2019003994 W JP2019003994 W JP 2019003994W WO 2020105199 A1 WO2020105199 A1 WO 2020105199A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistor
pair
lead terminal
layer
electrode pad
Prior art date
Application number
PCT/JP2019/003994
Other languages
English (en)
Japanese (ja)
Inventor
裕志 木澤
文雄 西野
植田　要治
友樹 坂井
Original Assignee
立山科学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 立山科学工業株式会社 filed Critical 立山科学工業株式会社
Publication of WO2020105199A1 publication Critical patent/WO2020105199A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer

Definitions

  • the present invention relates to a resistor temperature sensor having a resistor formed of a platinum thin film on an insulating substrate.
  • a resistor temperature sensor in which a resistor is formed by a platinum thin film on an insulating substrate has been used as an automobile exhaust gas temperature sensor.
  • a resistor temperature sensor for example, in Patent Document 1, a resistor is formed by a platinum thin film on an insulating substrate, and electrode pads are formed on both sides of the resistor by thick film printing, A resistor temperature sensor for connecting a lead terminal to an electrode pad is disclosed. Platinum is mainly used as the electrode pad and the lead terminal, and the lead terminal made of a platinum wire is connected to the platinum electrode pad by welding.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a resistor temperature sensor in which a lead terminal and an electrode pad are firmly connected.
  • the resistor temperature sensor of the present invention has an insulating substrate, a resistor portion, and a pair of connecting portions connected to both ends of the resistor portion, and a resistor formed of a platinum thin film on the insulating substrate, and a pair.
  • a pair of electrode pads formed to cover each of the connection parts, a pair of lead terminals connected to each of the pair of electrode pads, and a lead terminal protective layer formed to cover the pair of electrode pads.
  • a barrier layer formed so as to cover at least the resistance portion, the electrode pad being laminated on the insulating substrate, the first electrode pad layer being made of a platinum-based metal having high adhesion to the insulating substrate;
  • a second electrode pad layer which is laminated on the electrode pad layer and is made of a porous platinum-based metal.
  • the first electrode pad layer is formed of the platinum-based metal having high adhesiveness, the adhesiveness with the insulating substrate can be ensured, and further, the porous platinum-based metal is used. Since the second electrode pad layer is made of metal, residual stress due to strain generated when welding the lead terminals is relieved, and the strength and thermal shock resistance of the connecting portion between the lead terminals and the electrode pads are improved. be able to.
  • the lead terminal protective layer includes a first lead terminal protective layer including porous crystallized glass laminated so as to cover the electrode pad, and a first lead terminal protective layer. And a second lead terminal protective layer configured to include the amorphous glass laminated on the.
  • the lead terminal protection layer Conventionally, glass ceramics or glass was used for the lead terminal protection layer, but higher holding strength of the lead terminal and higher airtightness were required.
  • the first lead terminal protective layer configured to include the porous crystallized glass can ensure a high holding strength of the lead terminal, and the amorphous glass High airtightness can be ensured by the second lead terminal protective layer configured to include.
  • the lead terminal protective layer is configured to include a glass material containing a filler that is reactive during the firing process.
  • the glass material forming the lead terminal protective layer is such that a component having high airtightness is melted first in the firing process to surround the unmelted filler having a high melting point, and When rises, the filler melts and becomes like semi-crystallized glass. Thereby, high holding strength of the lead terminal can be secured and high airtightness can be secured.
  • the barrier layer is a first barrier layer made of an alumina-based material that is laminated so as to cover at least the resistance portion, and is laminated so as to cover the first barrier layer.
  • a second barrier layer containing magnesium oxide, titanium oxide, or strontium oxide.
  • the barrier layer that covers the resistor portion.
  • alumina has low reactivity with platinum, it has low airtightness and functions to prevent the entry of contaminants. There was a problem that was insufficient.
  • the second barrier layer having high airtightness is formed on the outer side of the first barrier layer while ensuring low reactivity with the substrate by the first barrier layer. It is possible to improve the airtightness while ensuring the low reactivity of the barrier layer with respect to the resistance portion.
  • the pair of connecting portions of the resistor are arranged at intervals in the lateral direction, and the resistor extends from the pair of connecting portions in one of the vertical directions, and the resistor portion is interposed therebetween.
  • a pair of arm portions provided with, the resistance portion, one folding portion on one side in the vertical direction, the other folding portion on the other side in the vertical direction, one folding portion and the other folding portion.
  • a barrier portion that extends is formed.
  • the barrier portion is formed between the arm portions, it is possible to prevent contaminants from entering through between the pair of connecting portions.
  • the vertical width of the barrier portion is at least twice the line width of the extension portion of the resistance portion, and the lateral width of the arm portion is 2 times the line width of the extension portion of the resistance portion.
  • the width in the vertical direction of the folded-back portion on one side in the vertical direction of the resistance portion is twice or more the line width of the extension portion of the resistance portion.
  • FIG. 2 is a sectional view taken along the line II-II of the resistor temperature sensor shown in FIG. 1.
  • FIG. 3 is a sectional view taken along the line III-III of the resistor temperature sensor shown in FIG. 1.
  • FIG. 4 is a sectional view taken along the line IV-IV of the resistor temperature sensor shown in FIG. 1. It is a top view which shows the shape of the resistor of the resistor temperature sensor shown in FIG. It is sectional drawing corresponding to FIG. 3 which shows the resistor temperature sensor of 2nd Embodiment of this invention.
  • FIG. 1 is a plan view showing a resistor temperature sensor according to an embodiment of the present invention
  • FIG. 2 is a sectional view taken along the line II-II of the resistor temperature sensor shown in FIG. 1
  • FIG. 3 is a diagram showing the resistor temperature sensor shown in FIG. III-III sectional view
  • FIG. 4 is an IV-IV sectional view of the resistor temperature sensor shown in FIG.
  • FIG. 5 is a plan view showing the shape of the resistor of the resistor temperature sensor shown in FIG.
  • the resistor temperature sensor 1 includes an insulating substrate 2, a resistor 4, a pair of electrode pads 6, a pair of lead terminals 10, and a lead terminal protection layer 8.
  • the insulating substrate 2 is composed of a rectangular plate made of ceramics such as alumina.
  • the insulating substrate 2 it is preferable to use a substrate of high-purity alumina ceramics that does not cause precipitation of impurities even when fired.
  • a high-purity alumina ceramic substrate has high hardness, is difficult to process, and is costly, a general alumina ceramic substrate having a purity of about 96% can be used.
  • impurities such as Mg, Ca, and Na in the alumina ceramic substrate are precipitated in the resistor 4 to increase the electric resistance, so that the surface of the insulating substrate 2 may be covered with an undercoat film (not shown).
  • the undercoat film is formed by coating high-purity sol-like alumina or magnesia.
  • the resistor 4 is composed of a platinum thin film formed on the insulating substrate 2.
  • the platinum thin film forming the resistor 4 can be formed by a vacuum thin film forming method such as vapor deposition or sputtering.
  • the resistor 4 is formed between the pair of connecting portions 4B, the pair of arm portions 4D1 and 4D2 (4D) extending from the pair of connecting portions 4B, and the pair of arm portions 4D1 and 4D2.
  • a barrier portion 4C extending from one arm portion 4D1.
  • the pair of connecting portions 4B are formed in a U shape, and are arranged at intervals in the lateral direction (vertical direction in FIG. 1, lateral direction in FIG. 5).
  • the pair of connecting portions 4B are connected to both ends of the resistor portion 4A via the arm portions 4D1 and 4D2.
  • the pair of arm portions 4D1 and 4D2 extend from each of the pair of connecting portions 4B in the vertical direction (rightward in FIG. 1, upward in FIG. 5).
  • the resistor section 4A is provided between the pair of arm sections 4D1 and 4D2.
  • the resistance portion 4A includes one folded portion 4A2 located on one side in the vertical direction, the other folded portion 4A3 located on the other side in the vertical direction (leftward in FIG. 1, downward in FIG. 5), and one folded portion and the other folded portion. 4A2 and 4A3, and an extending portion 4A1 extending between them, and has a zigzag shape.
  • the barrier portion 4C extends from a portion between the resistance portion 4A and the connection portion 4B of the one arm portion 4D1 toward the other arm portion 4D2.
  • the vertical width D1 of the barrier portion 4C is 160 ⁇ m, and is at least twice the line width of the extending portion 4A1 of the resistance portion 4A in order to prevent contaminants from entering the resistance portion 4A. Is preferable, and specifically, it is preferably 50 ⁇ m or more.
  • the width D2 between the tip of the barrier portion 4C and the other arm portion 4D2 is 200 ⁇ m in the present embodiment, and it is possible to cover the void existing between the pair of connection portions 4B (in FIG. 5, the barrier portion).
  • the right end of 4C is located on the right side of the left edge of the connecting portion 4B2).
  • the width D3 between the barrier portion 4C and the connection portion 4B is 200 ⁇ m in the present embodiment, and is preferably 50 ⁇ m or more in order to prevent a short circuit with the connection portion 4B.
  • the width D4 in the lateral direction of the pair of arm portions 4D1 and 4D2 and the width D5 in the longitudinal direction of the folded portion 4A2 on one side are 100 ⁇ m in the present embodiment, and the resistance in order to prevent contaminants from entering the resistance portion 4A.
  • the line width of the extending portion 4A1 of the portion 4A is preferably twice or more, and specifically 50 ⁇ m or more.
  • the pair of electrode pads 6 are formed so as to cover the pair of connecting portions 4B, respectively.
  • Each electrode pad 6 has a first electrode pad layer 6A laminated on the insulating substrate 2 and a second electrode pad layer 6B laminated on the first electrode pad layer 6A.
  • the first electrode pad layer 6A is made of a platinum-based metal having high adhesion to the insulating substrate 2.
  • the platinum-based metal having high adhesion to the insulating substrate 2 means one that does not cause poor adhesion by the "peeling test" in 15.1 and 15.2 of JIS H8504. More specifically, it refers to a platinum-based metal having an adhesion strength of 10 N / mm 2 or more.
  • a platinum-based metal having high adhesion a platinum group metal (platinum, ruthenium, rhodium, palladium, osmium, iridium) and glass frit (powdered glass) containing silicon as a main component, or silicon, aluminum, A mixture of oxides of manganese, cobalt, titanium, magnesium, calcium, barium, and strontium may be used.
  • the second electrode pad layer 6B is made of a porous platinum-based metal.
  • Porous platinum-based metal refers to platinum-based metal having a porosity of 20 to 80% specified in JIS R 1600 4112.
  • the lead terminal protection layer 8 is formed so as to cover the pair of electrode pads 6.
  • the lead terminal protective layer 8 has a first lead terminal protective layer 8A laminated so as to cover the electrode pad 6, and a second lead terminal protective layer 8B laminated so as to cover the first lead terminal protective layer 8A. ..
  • the first lead terminal protection layer 8A is made of porous crystallized glass.
  • Porous glass means porous glass defined in JIS R1600 2326.
  • the porosity of the porous crystallized glass forming the first lead terminal protection layer 8A is preferably 10 to 80%.
  • the second lead terminal protection layer 8B uses non-crystallized glass for high airtightness.
  • Non-crystallized glass means glass other than crystallized glass defined in JIS R1600 2329.
  • the pair of lead terminals 10 is made of platinum in this embodiment.
  • the lead terminal 10 may be made of platinum group metal (platinum, ruthenium, rhodium, palladium, osmium, iridium), gold, silver, copper, or an alloy thereof.
  • the barrier layer 12 is configured to cover at least the resistance portion 4A of the resistor 4.
  • the barrier layer 12 has a first barrier layer 12A laminated so as to cover the resistor portion 4A and a second barrier layer 12B laminated so as to cover the first barrier layer 12A.
  • the first barrier layer 12A is composed of a thin film of alumina-based material.
  • the thickness of the first barrier layer 12A is 100-500 nm.
  • the second barrier layer 12B is composed of a thin film containing silicon oxide in the present embodiment, and may be composed of a thin film containing aluminum oxide, magnesium oxide, titanium oxide, or strontium oxide.
  • the thickness of the second barrier layer 12B is 10-200 nm.
  • the resistance part protection layer 14 is formed so as to cover the barrier layer 12.
  • the resistance part protection layer 14 is made of, for example, Si—Ba—Al—Zr system glass, Si—Ca—Al—Ba—Sr system glass, or alumina (Al 2 O 3) or quartz (SiO 2) ceramics.
  • the lid 16 is formed so as to cover the resistance part protection layer 14.
  • the lid 16 is made of, for example, alumina (Al2O3) or quartz (SiO2) ceramics.
  • a method of manufacturing the resistor temperature sensor 1 of this embodiment will be described.
  • a resist for patterning is applied on the surface, and the pattern of the resistor 4 is exposed and developed to form the pattern of the resistor 4.
  • a platinum thin film is formed on the surface of the insulating substrate 2.
  • a uniform thin film is formed on the insulating substrate 2 by a vacuum thin film forming method such as vapor deposition or sputtering.
  • the platinum thin film is lifted off, and the pattern of the resistor 4 made of the platinum thin film is formed on the surface of the insulating substrate 2.
  • a resist for patterning is applied on the platinum thin film resistor 4 and exposed and developed using a mask shape having an opening over the resistor 4 and a part of the electrode pad 6 of the connecting portion 4B to develop a barrier layer. Twelve patterns are formed. This mask may also be used as a masking mask for the pad portion.
  • the barrier layer material is uniformly formed by a vacuum thin film forming method using a mask to form the barrier layer 12.
  • the first electrode pad layer 6A is formed on the connection portion 4B of the resistor 4 by thick film printing, and heat treatment is performed.
  • a mask (not shown) having an opening in the shape of the first electrode pad layer 6A is used.
  • the heat treatment is performed at a constant high temperature of about 900 ° C. to 1400 ° C. to stabilize the crystal grain boundaries of the platinum thin film of the resistor 4.
  • the second electrode pad layer 6B is formed on the first electrode pad layer 6A by thick film printing, and heat treatment is performed in the same manner as the first electrode pad layer 6A.
  • a trimming groove is formed in an adjusting portion which is a part of the resistance body 4 by laser trimming.
  • a glass paste for the resistance part protection layer 14 is applied so as to cover the barrier layer 12 using a predetermined mask having an opening of a size that covers the barrier layer 12, and the material of the lid 16 is further applied. To coat. Then, the glass paste is heat-treated at a temperature of about 900 ° C. to 1200 ° C. to form the resistance part protection layer 14 and the lid 16.
  • the large-sized ceramic substrate is divided into the insulating substrates 2.
  • the lead terminal 10 is welded to the electrode pad 6.
  • spot welding or the like is used to form welded portions at a plurality of locations for each lead terminal 10.
  • the end portion of the lead terminal 10 is positioned so as to be close to or overlap with the end edge portion of the lid 16.
  • the welded portion is covered with a glass paste for the first lead terminal protective layer 8A by a method such as dispensing so that the welded portion of the electrode pad 6 and the lead terminal 10 is covered.
  • the glass paste is heat-treated at a temperature of about 900 ° C. to 1200 ° C.
  • the first lead terminal protection layer 8A is covered with the glass paste for the second lead terminal protection layer 8B, and heat treatment is performed in the same manner as the first lead terminal protection layer 8A to form the lead terminal protection layer 8 and the resistor temperature sensor 1 And
  • the electrode pad 6 has the first electrode pad layer 6A and the second electrode pad layer 6B, and the first electrode pad layer 6A is made of a platinum-based metal having high adhesiveness. Since the second electrode pad layer 6B is made of a porous platinum-based metal, the residual stress due to the strain generated when the lead terminal 10 is welded is relaxed. The strength and thermal shock resistance of the connecting portion between the lead terminal 19 and the electrode pad 6 can be improved.
  • the lead terminal protective layer 8 includes the first lead terminal protective layer 8A configured to include the porous crystallized glass laminated so as to cover the electrode pads, and the first lead terminal.
  • a second lead terminal protective layer 8B which is formed by including amorphous glass laminated on the protective layer 8A.
  • the first lead terminal protective layer 8A configured to include the porous crystallized glass can ensure a high holding strength of the lead terminal 10 and includes the amorphous glass. High airtightness can be ensured by the formed second lead terminal protection layer 8B.
  • the barrier layer 12 is laminated so as to cover at least the resistor portion 4A, and the first barrier layer 12A made of an alumina-based material and the first barrier layer 12A are laminated so as to be oxidized.
  • the barrier portion 4C is formed between the arm portions 4D1 and 4D2 of the resistor 4, it is possible to prevent contaminants from entering between the pair of connecting portions 4B.
  • the barrier portion 4C has a vertical width of 50 ⁇ m or more
  • the arm portions 4D1 and 4D2 have a horizontal width of 50 ⁇ m or more
  • the resistance portion 4A has a vertical folding portion 4A2.
  • the width in the vertical direction is 50 ⁇ m or more.
  • the lead terminal protection layer 8 includes the first lead terminal protection layer 8A including porous crystallized glass and the second lead terminal protection layer including amorphous glass.
  • the present invention is not limited to this.
  • FIG. 6 is a sectional view corresponding to FIG. 3, showing a resistor temperature sensor according to a second embodiment of the present invention.
  • the lead terminal protection layer 108 is composed of one layer.
  • the lead terminal protection layer 108 is made of glass containing a filler that is reactive during the firing process.
  • Filled glass refers to, for example, a glass material containing alumina as a main component, in which a filler such as silicon, magnesium, calcium, barium or strontium oxide is mixed, and the particle shape of the filler is round or crushed.
  • the particle size of the filler is preferably 0.1 to 10 ⁇ m, and the content ratio of the filler is preferably 10 to 30%.
  • the lead terminal protective layer is configured to include a glass material containing a filler that is reactive during the firing process.
  • the glass material that constitutes the lead terminal protective layer is a semi-crystallized glass that melts the highly airtight component first and surrounds the unmelted filler in the firing process, and when the temperature rises, the filler melts. become that way. Thereby, high holding strength of the lead terminal can be secured and high airtightness can be secured.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Details Of Resistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

La présente invention concerne un capteur de température de résistance dans lequel une borne de raccordement et une pastille d'électrode sont fermement connectées l'une à l'autre. Ce capteur de température de résistance comprend : un substrat isolant 2; une résistance 4 qui est formée d'un film mince de platine sur le substrat isolant 2 et comprend une partie résistive 5A et une paire de parties de connexion 4B qui sont connectées aux deux extrémités de la partie résistive 5A; une paire de pastilles d'électrode 6 qui sont formées de manière à recouvrir respectivement la paire de parties de connexion 4B; une paire de bornes de raccordement 10 qui sont respectivement connectées à la paire de pastilles d'électrode 6; une couche de protection de borne de raccordement 8 qui est formée de manière à recouvrir la paire de pastilles d'électrode 6; et une couche barrière 12 qui est formée de manière à recouvrir au moins la partie résistive 4A. Chacune des pastilles d'électrode 6 comprend : une première couche de pastille d'électrode 6A qui est superposée sur le substrat isolant 2 et est formée à partir d'un métal à base de platine qui présente une bonne adhérence au substrat isolant 2; et une seconde couche de pastille d'électrode 6B qui est superposée sur la première couche de pastille d'électrode 6A et est formée d'un métal à base de platine poreux.
PCT/JP2019/003994 2018-11-21 2019-02-05 Capteur de température de résistance WO2020105199A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-218159 2018-11-21
JP2018218159A JP2020085584A (ja) 2018-11-21 2018-11-21 抵抗体温度センサ

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Publication Number Publication Date
WO2020105199A1 true WO2020105199A1 (fr) 2020-05-28

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WO (1) WO2020105199A1 (fr)

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Publication number Priority date Publication date Assignee Title
JP7076045B1 (ja) * 2020-12-15 2022-05-26 株式会社メイコー 薄型温度センサ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005292120A (ja) * 2004-03-08 2005-10-20 Ngk Spark Plug Co Ltd 白金抵抗体式温度センサ
JP2018072043A (ja) * 2016-10-25 2018-05-10 京セラ株式会社 測温体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005292120A (ja) * 2004-03-08 2005-10-20 Ngk Spark Plug Co Ltd 白金抵抗体式温度センサ
JP2018072043A (ja) * 2016-10-25 2018-05-10 京セラ株式会社 測温体

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