WO2020093479A1 - 蒸镀挡板机构及蒸镀装置 - Google Patents

蒸镀挡板机构及蒸镀装置 Download PDF

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Publication number
WO2020093479A1
WO2020093479A1 PCT/CN2018/117823 CN2018117823W WO2020093479A1 WO 2020093479 A1 WO2020093479 A1 WO 2020093479A1 CN 2018117823 W CN2018117823 W CN 2018117823W WO 2020093479 A1 WO2020093479 A1 WO 2020093479A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
evaporation
baffle
baffle mechanism
substrate
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Application number
PCT/CN2018/117823
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English (en)
French (fr)
Inventor
朱秋虹
施展
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/325,517 priority Critical patent/US20210351017A1/en
Publication of WO2020093479A1 publication Critical patent/WO2020093479A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Definitions

  • the invention relates to a vapor deposition baffle mechanism and a vapor deposition device, in particular to a vapor deposition baffle mechanism and a vapor deposition device applied in the field of display manufacturing.
  • OLED Organic Light Emitting Diode
  • the evaporation source is a point evaporation source, a linear evaporation source, or a surface evaporation source, etc., it is generally a one-step vacuum evaporation, that is, each layer of film is evaporated onto the entire substrate at once .
  • the equipment used for evaporation is an evaporation source, and the evaporation source is divided into an organic evaporation source and an inorganic evaporation source.
  • the design of the evaporation source for different materials is different, and the design of the angle shield is also different.
  • the length and height of the corresponding design of the angle-limited version are fixed, but the doping rate of different materials is different, and the corresponding angle-limited version is different. This is difficult to adjust the doping rate in production.
  • the doping rate of the material affects the efficiency and life of the product.
  • An object of the present invention is to provide a vapor deposition baffle mechanism and a vapor deposition device, which use a driving source to drive the up and down movement of the baffle assembly, which can enlarge or reduce the vapor deposition area of the substrate to achieve automatic adjustment of the height of the angle limiting plate.
  • an embodiment of the present invention provides a vapor deposition baffle mechanism.
  • the vapor deposition baffle mechanism is disposed between a vapor deposition source and a substrate, and the vapor deposition baffle mechanism includes A baffle assembly and a driving source, the baffle assembly has an angle limiting plate and an evaporation aperture, the evaporation aperture is formed on the angle limitation plate, and the evaporation aperture is configured for A substance evaporated from the evaporation source passes through in a conical radial shape and is deposited on an evaporation region of the substrate; the driving source and the baffle assembly are installed together, and the driving source is configured to drive The baffle assembly moves upward to shrink the evaporation area of the substrate, or the baffle assembly is driven to move downward to enlarge the evaporation area of the substrate; wherein the substrate is a glass substrate, the The driving source is configured to deposit a thin film on the glass substrate.
  • the driving source has two bases and two support rods, and the support rods are respectively supported on two opposite sides of the angle limiting plate.
  • the base is an automatic height adjuster configured to raise and lower the support rod.
  • the base is an elastic adjuster configured to raise and lower the support rod.
  • the base is an air pressure rod or a hydraulic cylinder, which is configured to raise and lower the support rod.
  • the driving source has two sliders, which are mounted on the support rod to drive the angle limiting plate to move.
  • the support bar is marked with a scale configured to identify a height at which the angle limiting plate is located.
  • an embodiment of the present invention provides an evaporation apparatus including the above-mentioned evaporation baffle mechanism.
  • the vapor deposition device further includes a cavity, and the vapor deposition baffle mechanism is disposed in the cavity.
  • the vapor deposition apparatus further includes a plurality of vapor deposition sources and a plurality of vapor deposition baffle mechanisms, and each vapor deposition baffle mechanism is disposed at a corresponding vapor deposition source Above.
  • an embodiment of the present invention provides a vapor deposition baffle mechanism.
  • the vapor deposition baffle mechanism is disposed between a vapor deposition source and a substrate, and the vapor deposition baffle mechanism includes A baffle assembly and a driving source, the baffle assembly has an angle limiting plate and an evaporation aperture, the evaporation aperture is formed on the angle limitation plate, and the evaporation aperture is configured for A substance evaporated from the evaporation source passes through in a conical radial shape and is deposited on an evaporation region of the substrate; the driving source and the baffle assembly are installed together, and the driving source is configured to drive The baffle assembly moves upward to shrink the evaporation area of the substrate, or the baffle assembly is driven to move downward to enlarge the evaporation area of the substrate.
  • the driving source has two bases and two support rods, and the support rods are respectively supported on two opposite sides of the angle limiting plate.
  • the base is an automatic height adjuster configured to raise and lower the support rod.
  • the base is an elastic adjuster configured to raise and lower the support rod.
  • the base is an air pressure rod or a hydraulic cylinder, which is configured to raise and lower the support rod.
  • the driving source has two sliders, which are mounted on the support rod to drive the angle limiting plate to move.
  • the support bar is marked with a scale configured to identify a height at which the angle limiting plate is located.
  • the beneficial effect of the present invention is that: the driving source is used to drive the lifting movement of the baffle assembly, which can enlarge or reduce the evaporation area of the substrate, so as to realize the automatic adjustment of the height of the angle limiting plate.
  • the height of the angle limiting plate is adjusted by the driving source to change the size of the evaporation area of the substrate to adjust the doping rate of the material and improve the Describe the efficiency and life of the vapor deposition device.
  • FIG. 1 is a schematic diagram of the downward movement of the baffle assembly of a preferred embodiment of the evaporation apparatus of the present invention.
  • FIG. 2 is a schematic diagram of the upward movement of the baffle assembly of a preferred embodiment of the evaporation apparatus of the present invention.
  • FIG. 1 is a schematic diagram of a preferred embodiment of the vapor deposition apparatus of the present invention.
  • the vapor deposition device includes a cavity 2, a plurality of vapor deposition baffle mechanisms 3, and a plurality of vapor deposition sources 4.
  • the vapor deposition device is configured to be used on a substrate 101 ( A thin film is deposited on a glass substrate, and the substrate 101 is disposed in the cavity 2.
  • the present invention will describe in detail the detailed structure, assembling relationship and operation principle of the above-mentioned components of each embodiment in the following.
  • the cavity 2 has a bottom plate 21, two side plates 22, and a top plate 23, wherein the two side plates 22 are disposed on two opposite sides of the bottom plate 21, and the top plate 23 covers the Above the bottom plate 21 is combined with the two side plates 22, and the base plate 101 is fixed on the top plate 23.
  • the plurality of vapor deposition baffle mechanisms 3 are disposed between the plurality of vapor deposition sources 4 and the substrate 101, and each vapor deposition baffle mechanism 3 has a baffle assembly 31 And a driving source 32.
  • the plurality of vapor deposition baffle mechanisms 3 are arranged side by side in the cavity 2, and each vapor deposition baffle mechanism 3 is disposed at the corresponding vapor deposition source 4 Above.
  • only one vapor deposition baffle mechanism 3 and one vapor deposition source 4 may be provided in the cavity 2, which is not limited thereto.
  • the baffle assembly 31 has an angle restricting plate 311 and a vapor deposition aperture 312, the vapor deposition aperture 312 is formed on the angle restricting plate 311, and the vapor deposition aperture 312 is configured A substance evaporated by the corresponding evaporation source 4 passes through in a conical shape and is deposited on an evaporation area of the substrate 101.
  • the driving source 32 and the baffle assembly 31 Installed together the driving source 32 is configured to drive the baffle assembly 31 to move upward to shrink the evaporation area of the substrate 101, or to drive the baffle assembly 31 to move downward to make the substrate 101 The evaporation area is expanded.
  • the driving source 32 has two bases 321 and two support rods 322, and the support rods 322 are respectively supported on two opposite sides of the angle limiting plate 311.
  • the base 321 is an automatic height adjuster configured to elevate the support bar 322 along a direction (such as the Z axis).
  • the base 321 can also be configured as an elastic adjuster configured to raise and lower the support rod 322, or the base 321 is a pneumatic rod or a hydraulic cylinder configured to raise and lower the support rod 322
  • the driving source 32 has two sliders (not shown), which are mounted on the support rod 322 to drive the angle limiting plate 311 to move.
  • the support rod 322 can be marked with a scale, which is configured to identify a height at which the angle limiting plate 311 is located.
  • the vapor deposition apparatus adopts a point evaporation source, for example, the plurality of evaporation sources 4 are arranged side by side on the bottom plate 21 of the cavity 2, so that the plurality of evaporation sources 4 It is located below the substrate 101, and the plurality of vapor deposition baffle mechanisms 3 are located between the substrate 101 and the plurality of vapor deposition sources 4.
  • the plurality of vapor deposition baffle mechanisms 3 have not been activated.
  • the material to be vapor deposited is put into the plurality of vapor deposition sources 4 and heated; the substrate 101 is Rotate in the horizontal direction with its geometric center as the center.
  • the steam injection speed reaches the set value, the substances evaporated by the plurality of evaporation sources 4 will be attached to the substrate 101 through the corresponding evaporation holes 312 . As shown in FIG.
  • the driving source 32 drives the baffle assembly 31 to move upward to limit the evaporation
  • the material evaporated by the plating source 4 has a conical radial angle A2. As shown in FIG. 1, if it is desired to expand a vapor deposition region R1 of the substrate 101 to increase the doping rate of the material, that is, the driving source 32 drives the baffle assembly 31 to move downward to enlarge the vaporization
  • the material evaporated by the plating source 4 is a cone-shaped radial evaporation angle A1.
  • the automatic adjustment of the height of the angle limiting plate 311 realizes the change from the evaporation angle A1 to the evaporation angle A2, corresponding to the evaporation area of the material
  • the change from R1 to the vapor deposition region R2 can adjust the doping rate.
  • the driving source 32 is used to drive the up-and-down movement of the baffle assembly 31 to enlarge or reduce the vapor deposition area of the substrate 101, so as to realize automatic adjustment of the height of the angle limiting plate 311.
  • the height of the angle limiting plate 311 is adjusted by the driving source 32 to change the size of the evaporation area of the substrate 101 to adjust the doping rate of the material , And improve the efficiency and life of the evaporation device.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种蒸镀挡板机构及蒸镀装置，蒸镀装置包括腔体（2）、蒸镀挡板机构（3）及蒸镀源（4），蒸镀挡板机构（3）包括挡板组件（31）及驱动源（32），挡板组件（31）具有角度限制板（311）及蒸镀孔径（312），蒸镀孔径（312）形成在角度限制板（311）上，驱动源（32）与挡板组件（31）安装在一起，驱动源（32）驱动挡板组件（31）向上移动或向下移动而使得蒸镀区域缩小或扩大。

Description

蒸镀挡板机构及蒸镀装置 技术领域
本发明是有关于一种蒸镀挡板机构及蒸镀装置，特别是有关于一种应用在显示器制造领域的蒸镀挡板机构及蒸镀装置。
 背景技术
随着显示技术的急速进步，作为显示装置核心的半导体元件技术也随之得到了飞跃性的进步。对于现有的显示装置而言，有机发光二极管(Organic Light Emitting Diode, OLED)作为一种电流型发光器件，因其所具有的自发光、快速响应、宽视角和可制作在柔性衬底上等特点而越来越多地被应用于高性能显示领域当中。另外，OLED显示器具有色彩鲜艳，高对比度，功耗低，可柔等诸多优点，成为显示领域开发和投资的热点。随着OLED显示器制作工艺的日趋成熟，OLED显示器越来越被大众所认可，应用领域将会越来越广。
在光电及显示领域，特别是OLED器件制造领域，有机小分子真空蒸镀的不均匀性、蒸镀掩膜板(Mask)强度及精确度的要求等因素制约了OLED显示技术往基板大尺化方向的发展。现有技术的真空蒸镀装置中，蒸发源无论采用点蒸发源、线蒸发源、或面蒸发源等，一般均为一步式真空蒸镀，即各层薄膜均一次性蒸镀到整个基板上。
然而，OLED生产技术上，用于蒸镀的设备为蒸发源(source)，而蒸发源又分为有机蒸发源和无机蒸发源。对于蒸镀不同材料的蒸发源的设计会有所差别，其中angle shield(角度限制版)的设计也存在差异。在目前的应用中，角度限制版对应设计的长度和高度是固定的，但是不同材料的掺杂率不同，对应的角度限制版都不同，这对于生产中调节掺杂率是很难的，而材料的掺杂率影响着产品的效率和寿命。
 技术问题
本发明的目的在于提供一种蒸镀挡板机构及蒸镀装置，利用驱动源驱动挡板组件的升降移动，能够放大或缩小基板的蒸镀区域，以实现角度限制板的高度的自动调节。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
为达成本发明的前述目的，本发明一实施例提供一种蒸镀挡板机构，所述蒸镀挡板机构设置在一蒸镀源及一基板之间，而且所述蒸镀挡板机构包括一挡板组件及一驱动源，所述挡板组件具有一角度限制板及一蒸镀孔径，所述蒸镀孔径形成在所述角度限制板上，而且所述蒸镀孔径配置用以供所述蒸镀源蒸发出的一物质呈圆锥形放射状穿过，而沉积在所述基板的一蒸镀区域；所述驱动源与所述挡板组件安装在一起，所述驱动源配置用以驱动所述挡板组件向上移动而使得所述基板的蒸镀区域缩小，或者驱动所述挡板组件向下移动而使得所述基板的蒸镀区域扩大；其中所述基板为一玻璃基板，所述驱动源配置用以在所述玻璃基板上蒸镀薄膜。
在本发明的一实施例中，所述驱动源具有二底座及二支撑杆，所述支撑杆分别支撑在所述角度限制板的二相反侧。
在本发明的一实施例中，所述底座为自动高度调节器，配置用以升降所述支撑杆。
在本发明的一实施例中，所述底座为弹性调节器，配置用以升降所述支撑杆。
在本发明的一实施例中，所述底座为气压杆或油压缸，配置用以升降所述支撑杆。
在本发明的一实施例中，所述驱动源具有二滑块，安装在所述支撑杆上而带动所述角度限制板移动。
在本发明的一实施例中，所述支撑杆标示有一刻度，配置用以识别所述角度限制板所在位置的一高度。
为达成本发明的前述目的，本发明一实施例提供一种蒸镀装置，所述蒸镀装置包括上述的蒸镀挡板机构。
在本发明的一实施例中，所述蒸镀装置还包含一腔体，所述蒸镀挡板机构设置在所述腔体中。
在本发明的一实施例中，所述蒸镀装置还包含多个所述蒸镀源及多个所述蒸镀挡板机构，每一个蒸镀挡板机构设置在相应的所述蒸镀源的上方。
为达成本发明的前述目的，本发明一实施例提供一种蒸镀挡板机构，所述蒸镀挡板机构设置在一蒸镀源及一基板之间，而且所述蒸镀挡板机构包括一挡板组件及一驱动源，所述挡板组件具有一角度限制板及一蒸镀孔径，所述蒸镀孔径形成在所述角度限制板上，而且所述蒸镀孔径配置用以供所述蒸镀源蒸发出的一物质呈圆锥形放射状穿过，而沉积在所述基板的一蒸镀区域；所述驱动源与所述挡板组件安装在一起，所述驱动源配置用以驱动所述挡板组件向上移动而使得所述基板的蒸镀区域缩小，或者驱动所述挡板组件向下移动而使得所述基板的蒸镀区域扩大。
在本发明的一实施例中，所述驱动源具有二底座及二支撑杆，所述支撑杆分别支撑在所述角度限制板的二相反侧。
在本发明的一实施例中，所述底座为自动高度调节器，配置用以升降所述支撑杆。
在本发明的一实施例中，所述底座为弹性调节器，配置用以升降所述支撑杆。
在本发明的一实施例中，所述底座为气压杆或油压缸，配置用以升降所述支撑杆。
在本发明的一实施例中，所述驱动源具有二滑块，安装在所述支撑杆上而带动所述角度限制板移动。
在本发明的一实施例中，所述支撑杆标示有一刻度，配置用以识别所述角度限制板所在位置的一高度。
 有益效果
本发明的有益效果为：利用所述驱动源驱动所述挡板组件的升降移动，能够放大或缩小所述基板的蒸镀区域，以实现所述角度限制板的高度的自动调节。当所述挡板组件需要调节高度时，通过所述驱动源调节所述角度限制板的高度，以改变所述基板的蒸镀区域的大小，以此来调节材料的掺杂率，并改善所述蒸镀装置的效率及寿命。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明蒸镀装置的一优选实施例的挡板组件向下移动的一示意图。
图2是本发明蒸镀装置的一优选实施例的挡板组件向上移动的一示意图。
 本发明的最佳实施方式
以上对本发明实施例提供的液晶显示组件进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明。同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
请参照图1所示，为本发明蒸镀装置的一优选实施例的一示意图。所述蒸镀装置包括一腔体2、多个蒸镀挡板机构3及多个蒸镀源4，在有机发光二级管的领域中，所述蒸镀装置配置用以在一基板101(如玻璃基板)上蒸镀薄膜，而且所述基板101设置在所述腔体2中。本发明将于下文详细说明各实施例上述各组件的细部构造、组装关系及其运作原理。
续参照图1所示，所述腔体2具有一底板21、二侧板22及一顶板23，其中所述两侧板22设置在所述底板21的二相对侧，所述顶板23覆盖在所述底板21的上方并与所述两侧板22组合在一起，而且所述基板101固定在所述顶板23上。
续参照图1所示，所述多个蒸镀挡板机构3设置在所述多个蒸镀源4及所述基板101之间，而且每一个蒸镀挡板机构3具有一挡板组件31及一驱动源32，在本实施例中，所述多个蒸镀挡板机构3并排设置在所述腔体2中，每一个蒸镀挡板机构3设置在相应的所述蒸镀源4的上方。在其他实施例中，在所述腔体2中也可以仅设置一个蒸镀挡板机构3及一个蒸镀源4，并不以此为限。
续参照图1所示，所述挡板组件31具有一角度限制板311及一蒸镀孔径312，所述蒸镀孔径312形成在所述角度限制板311上，而且所述蒸镀孔径312配置用以供相应的所述蒸镀源4蒸发出的一物质呈圆锥形放射状穿过，而沉积在所述基板101的一蒸镀区域，另外，所述驱动源32与所述挡板组件31安装在一起，所述驱动源32配置用以驱动所述挡板组件31向上移动而使得所述基板101的蒸镀区域缩小，或者驱动所述挡板组件31向下移动而使得所述基板101的蒸镀区域扩大。
续参照图1所示，所述驱动源32具有二底座321及二支撑杆322，所述支撑杆322分别支撑在所述角度限制板311的二相反侧。在本实施例中，所述底座321为自动高度调节器，配置用以沿着一方向(如Z轴)升降所述支撑杆322。在其他实施例中，所述底座321也能够设置为弹性调节器，配置用以升降所述支撑杆322，或者所述底座321为气压杆或油压缸，配置用以升降所述支撑杆322，或者所述驱动源32具有二滑块(未绘示)，安装在所述支撑杆322上而带动所述角度限制板311移动。进一步来说，所述支撑杆322能够标示有一刻度，配置用以识别所述角度限制板311所在位置的一高度。
续参照图1所示，所述蒸镀装置采用点蒸发源的方式，例如：在所述腔体2的底板21并排设置所述多个蒸镀源4，使得所述多个蒸镀源4位于所述基板101的下方，而且所述多个蒸镀挡板机构3位于所述基板101及所述多个蒸镀源4之间。
依据上述的结构，蒸镀前，所述多个蒸镀挡板机构3尚未启动，工作时，将需要蒸镀的材料放入所述多个蒸镀源4中并加热；所述基板101在水平方向上以自身的几何中心为中心旋转，当蒸汽的喷射速度达到设定值时，所述多个蒸镀源4蒸发出来的物质会通过相应的蒸镀孔径312附着在所述基板101上。如图2所示，若想要缩小所述基板101的一蒸镀区域R2来降低材料的掺杂率，即通过所述驱动源32驱动所述挡板组件31向上移动，限缩所述蒸镀源4蒸发出的物质呈圆锥形放射状的一蒸发角度A2。如图1所示，若想要扩大所述基板101的一蒸镀区域R1来提高材料的掺杂率，即通过所述驱动源32驱动所述挡板组件31向下移动，放大所述蒸镀源4蒸发出的物质呈圆锥形放射状的一蒸发角度A1，通过对所述角度限制板311的高度的自动调节来实现所述蒸发角度A1至蒸发角度A2的变化，对应材料的蒸镀区域R1至蒸镀区域R2的变化，由此可以调节掺杂率。最后，当蒸镀材料在所述基板101上形成规定厚度的膜层时，关闭所述多个蒸镀源4以完成所述基板101的蒸镀作业。
通过上述的设计，利用所述驱动源32驱动所述挡板组件31的升降移动，能够放大或缩小所述基板101的蒸镀区域，以实现所述角度限制板311的高度的自动调节。当所述挡板组件31需要调节高度时，通过所述驱动源32调节所述角度限制板311的高度，以改变所述基板101的蒸镀区域的大小，以此来调节材料的掺杂率，并改善所述蒸镀装置的效率及寿命。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (17)

  1. 一种蒸镀挡板机构，设置在一蒸镀源及一基板之间，其中：所述蒸镀挡板机构包括：
    一挡板组件，所述挡板组件具有一角度限制板及一蒸镀孔径，所述蒸镀孔径形成在所述角度限制板上，而且所述蒸镀孔径配置用以供所述蒸镀源蒸发出的一物质呈圆锥形放射状穿过，而沉积在所述基板的一蒸镀区域；及
    一驱动源，所述驱动源与所述挡板组件安装在一起，所述驱动源配置用以驱动所述挡板组件向上移动而使得所述基板的蒸镀区域缩小，或者驱动所述挡板组件向下移动而使得所述基板的蒸镀区域扩大；
    其中所述基板为一玻璃基板，所述驱动源配置用以在所述玻璃基板上蒸镀薄膜。
  2. 如权利要求1所述的蒸镀挡板机构，其中：所述驱动源具有二底座及二支撑杆，所述支撑杆分别支撑在所述角度限制板的二相反侧。
  3. 如权利要求2所述的蒸镀挡板机构，其中：所述底座为自动高度调节器，配置用以升降所述支撑杆。
  4. 如权利要求2所述的蒸镀挡板机构，其中：所述底座为弹性调节器，配置用以升降所述支撑杆。
  5. 如权利要求2所述的蒸镀挡板机构，其中：所述底座为气压杆或油压缸，配置用以升降所述支撑杆。
  6. 如权利要求2所述的蒸镀挡板机构，其中：所述驱动源具有二滑块，安装在所述支撑杆上而带动所述角度限制板移动。
  7. 如权利要求2所述的蒸镀挡板机构，其中：所述支撑杆标示有一刻度，配置用以识别所述角度限制板所在位置的一高度。
  8. 一种蒸镀装置，其中：所述蒸镀装置包括如上述权利要求1至7任一项所述的蒸镀挡板机构。
  9. 如权利要求8所述的蒸镀装置，其中：所述蒸镀装置还包含一腔体，所述蒸镀挡板机构设置在所述腔体中。
  10. 如权利要求9所述的蒸镀装置，其中：所述蒸镀装置还包含多个所述蒸镀源及多个所述蒸镀挡板机构，每一个蒸镀挡板机构设置在相应的所述蒸镀源的上方。
  11. 一种蒸镀挡板机构，设置在一蒸镀源及一基板之间，其中：所述蒸镀挡板机构包括：
    一挡板组件，所述挡板组件具有一角度限制板及一蒸镀孔径，所述蒸镀孔径形成在所述角度限制板上，而且所述蒸镀孔径配置用以供所述蒸镀源蒸发出的一物质呈圆锥形放射状穿过，而沉积在所述基板的一蒸镀区域；及
    一驱动源，所述驱动源与所述挡板组件安装在一起，所述驱动源配置用以驱动所述挡板组件向上移动而使得所述基板的蒸镀区域缩小，或者驱动所述挡板组件向下移动而使得所述基板的蒸镀区域扩大。
  12. 如权利要求11所述的蒸镀挡板机构，其中：所述驱动源具有二底座及二支撑杆，所述支撑杆分别支撑在所述角度限制板的二相反侧。
  13. 如权利要求12所述的蒸镀挡板机构，其中：所述底座为自动高度调节器，配置用以升降所述支撑杆。
  14. 如权利要求12所述的蒸镀挡板机构，其中：所述底座为弹性调节器，配置用以升降所述支撑杆。
  15. 如权利要求12所述的蒸镀挡板机构，其中：所述底座为气压杆或油压缸，配置用以升降所述支撑杆。
  16. 如权利要求12所述的蒸镀挡板机构，其中：所述驱动源具有二滑块，安装在所述支撑杆上而带动所述角度限制板移动。
  17. 如权利要求12所述的蒸镀挡板机构，其中：所述支撑杆标示有一刻度，配置用以识别所述角度限制板所在位置的一高度。
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