WO2015165183A1 - 一种蒸镀装置 - Google Patents

一种蒸镀装置 Download PDF

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Publication number
WO2015165183A1
WO2015165183A1 PCT/CN2014/085383 CN2014085383W WO2015165183A1 WO 2015165183 A1 WO2015165183 A1 WO 2015165183A1 CN 2014085383 W CN2014085383 W CN 2014085383W WO 2015165183 A1 WO2015165183 A1 WO 2015165183A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
magnetic
substrate
magnetic block
support frame
Prior art date
Application number
PCT/CN2014/085383
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English (en)
French (fr)
Inventor
马利飞
张鹏
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/436,053 priority Critical patent/US10233539B2/en
Publication of WO2015165183A1 publication Critical patent/WO2015165183A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • the present invention relates to a manufacturing apparatus in the field of display technology, and more particularly to an evaporation apparatus.
  • OLED organic light emitting diode
  • the full color display of the OLED generally includes R (red) G (green) B (blue) sub-pixel independent illumination, or white OLED combined with color filter film.
  • the RGB sub-pixel independent illumination is the most widely used color mode, which is independent illumination by using the organic light-emitting material in the sub-pixel unit.
  • the organic light-emitting material layer is generally formed by vacuum evaporation coating of an organic material.
  • the organic luminescent layer of the RGB sub-pixel unit needs to be separately vapor-deposited, and a metal mask is generally used in the process.
  • the open area is aligned with the sub-pixel area to evaporate different colors of luminescent material in different sub-pixel areas.
  • the metal mask is relatively thin, it is generally only a few tens of micrometers thick, and it is easy to be deformed, so that in practical use, it is inevitably caused to be inconsistent with the substrate to be vapor-deposited, thereby causing organic light emission in the vapor deposition.
  • the correct pattern cannot be formed.
  • an evaporation apparatus comprising: an evaporation chamber, an evaporation source disposed in the evaporation chamber, a mask support frame, and a substrate support frame, wherein the mask support frame is used for carrying a metal mask, the substrate support is used to carry the substrate to be evaporated, and the metal mask is disposed between the evaporation source and the substrate to be evaporated; the evaporation device further includes: an adsorption device disposed in the evaporation chamber, The adsorption device comprises: a plurality of magnetic blocks arranged in a matrix disposed on a side of the substrate to be vapor-deposited away from the metal mask, and a traction device for adjusting the upward movement of each of the magnetic blocks relative to the substrate to be vapor-deposited.
  • the vapor deposition apparatus achieves the following technical effects by introducing an adsorption device into the vapor deposition chamber: first, a magnetic field generated by the plurality of magnetic blocks disposed on the side of the substrate to be vapor-deposited away from the metal mask, which is included in the adsorption device , the metal mask can be closely adhered to the substrate to be vapor-deposited thereon to form a correct pattern when the sub-pixel unit is vapor-deposited; secondly, on the basis of the traction device included in the adsorption device The height of the magnetic blocks is controlled relative to the height of the substrate to be vapor-deposited, so that the magnetic fields of all the magnetic blocks tend to be uniform, and the metal mask is prevented from being deformed due to the magnetic field unevenness, thereby avoiding the influence on the above pattern.
  • the traction device includes a plurality of adjustment bars disposed above the magnetic block and in one-to-one correspondence with the magnetic blocks for driving the magnetic blocks to move up and down.
  • each of the adjustment rods is connected to the corresponding magnetic block by a screw connection, wherein the surface of the adjustment rod has a thread, and the surface of the magnetic block has a screw hole, a screw hole and an adjustment with respect to the surface of the adjustment rod
  • the threads of the rod surface match to form a threaded joint.
  • the adjusting rod and the magnetic block can also be connected by other means, such as snapping and bonding.
  • the traction device further includes a fixing plate for fixing the adjusting rod; wherein the fixing plate has a number of through holes corresponding to the adjusting rod for the adjusting rod to penetrate and the surface of the through hole has two Opposing grooves; and the surface of the adjusting rod has a plurality of pairs of elastic protrusions, each pair of protrusions matching the groove on the surface of the through hole for fixing the adjusting rod when the adjusting rod penetrates the through hole of the fixing plate live.
  • the fixing plate is connected to the lifting mechanism fixed to the bottom surface of the vapor deposition chamber, and the lifting mechanism is used to drive the fixing plate to move downward.
  • the traction apparatus further includes a controller that controls the movement of any of the adjustment bars up and down.
  • the vapor deposition device further includes a telescopic support frame disposed on the sidewall of the vapor deposition chamber and an opening disposed at a position where the telescopic support frame contacts the vapor deposition chamber, wherein the telescopic support The frame is telescopic in the direction of the vertical vapor deposition chamber sidewalls and is used to carry the separated or replaced magnetic blocks by stretching and transporting the separated or replaced magnetic blocks through the openings out of the evaporation chamber.
  • the vapor deposition device further includes a driving device disposed on the outdoor side of the vapor deposition chamber and connected to the telescopic support frame; wherein the driving device is used to control the expansion and contraction of the telescopic support frame.
  • the adsorption apparatus further includes a magnet block support plate for carrying the magnet block
  • the magnet block support plate may include a plurality of movable blocks, wherein a surface area of any one of the movable blocks is larger than the activity The surface area of the magnetic block carried by the block, and the pulling device is used to adjust the up and down movement of the magnetic block carried by the movable block relative to the substrate to be evaporated by moving the moving block up and down.
  • the traction means includes a drawbar disposed at four corners of each of the movable blocks for driving the movable block to move up and down.
  • All the magnetic blocks in the adsorption device are placed on the same horizontal plane by using the traction device, that is, the distances of all the magnetic blocks to the substrate to be evaporated are equal;
  • the distance between the magnetic block larger than the reference value or smaller than the reference value to the substrate to be vapor-deposited is respectively adjusted by the pulling device, so that the magnetic fields of all the magnetic blocks tend to be the reference values.
  • FIG. 1 is a schematic structural view of an evaporation apparatus according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural view of an adsorption device according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view showing an adjustment rod and a magnetic block in an adsorption device according to an embodiment of the present invention
  • Figure 4 is a schematic view showing the structure of a traction device according to an embodiment of the present invention.
  • Figure 5 is a schematic view showing the structure of an evaporation apparatus according to a second embodiment of the present invention.
  • Figure 6 is a view showing the structure of an evaporation apparatus according to a third embodiment of the present invention.
  • Figure 7 is a block diagram showing the structure of an evaporation apparatus according to a fourth embodiment of the present invention.
  • Fig. 8 is a view showing the structure of an adsorption device according to another embodiment of the present invention.
  • 01-vapor deposition device 10-vapor deposition chamber; 20-vapor deposition source; 30-mask support frame; 40-substrate support frame; 50-metal mask plate; 60-substrate to be evaporated; 70-adsorption device; 701-magnetic block; 702-traction device; 702a-adjusting rod; 702b-fixing plate; 702a1-protrusion; 702b1-through hole; 702c-traction rod; 703-lifting mechanism; 80- telescopic support frame; 90-drive device; 100-magnetic block support plate; 100a-active block.
  • Fig. 1 shows a schematic structural view of an evaporation apparatus 01 according to a first embodiment of the present invention.
  • the vapor deposition apparatus 01 includes a vapor deposition chamber 10, an evaporation source 20 disposed in the vapor deposition chamber, a mask support frame 30, and a substrate support frame 40.
  • the mask support frame 30 is used to carry the metal mask 50, and the substrate
  • the support frame 40 is configured to carry the substrate 60 to be vapor-deposited, and the metal mask 50 is disposed between the evaporation source 20 and the substrate 60 to be evaporated; further, the evaporation device 01 further includes: disposed in the evaporation chamber 10 Adsorption device 70.
  • the adsorption device 70 includes a plurality of magnetic blocks 701 arranged in a matrix on the side of the substrate 60 to be vapor-deposited away from the metal mask 50, and a traction device for adjusting the movement of each magnetic block relative to the substrate 60 to be vapor-deposited. 702.
  • the purpose of providing the magnetic block 701 on the side of the substrate 60 to be vapor-deposited away from the metal mask 50 is to closely match the metal mask 50 to the substrate 60 to be vapor-deposited thereon by the magnetic field generated by the magnetic block, thereby The correct pattern is formed when the pixel unit is vapor deposited.
  • the purpose of the traction device 702 is that the magnetic field unevenness may occur when the magnetic blocks 701 are in the same horizontal plane. Therefore, the distance between the magnetic blocks 701 and the substrate 60 to be vapor-deposited is adjusted by the traction device 702.
  • the magnetic field of these magnetic blocks 701 can be changed, so that the magnetic fields of all the magnetic blocks 701 tend to be uniform, and the metal mask 50 is prevented from being deformed due to the magnetic field unevenness, thereby avoiding the influence on the vapor deposition pattern.
  • the vapor deposition source 20 is disposed at a lower portion of the vapor deposition chamber 10 and is used to output a vapor deposition material such as a red light-emitting material, a green light-emitting material, or a blue light-emitting material.
  • a vapor deposition material such as a red light-emitting material, a green light-emitting material, or a blue light-emitting material.
  • each sub-pixel unit of the OLED display in addition to the light-emitting layer, it generally includes a hole transport layer disposed between the anode and the light-emitting layer, and an electron transport layer disposed between the cathode and the light-emitting layer; It may further include a hole injection layer disposed between the anode and the hole transport layer, an electron injection layer disposed between the cathode and the electron transport layer, and the like; each of the functional layers may be steamed by the evaporation source 20 to output a corresponding material. Plated to get the corresponding pattern.
  • the substrate support frame 40 is disposed on the upper portion of the vapor deposition chamber 10, and the edge of the substrate to be vapor-deposited 60 is located on the substrate support frame 40; wherein the substrate 60 to be evaporated may include a glass substrate substrate, and is disposed on the glass substrate substrate. And a thin film transistor or the like located in each sub-pixel unit, depending on the function of the display to be formed.
  • the vapor-deposited substrate or the substrate 60 to be vapor-deposited is exchanged through an opening (not shown) provided on the side wall of the vapor deposition chamber 10, and the opening can be opened and closed by a shutter.
  • the mask support frame 30 is disposed below the substrate support frame 40, and the edge of the metal mask 50 is located on the mask support frame 40.
  • the traction device 702 can adjust the up and down movement of the magnetic block relative to the substrate to be vapor-deposited 60 as follows: all the magnetic blocks 701 can be first placed on the same horizontal surface, that is, the distances of all the magnetic blocks 701 to the substrate 60 to be vapor-deposited are equal; The magnetic field of each magnetic block 701 can be measured by a magnetometer to obtain an initial magnetic field size distribution; and the magnetic value larger than the reference value or smaller than the reference value is respectively adjusted according to the measured value of the measured magnetic field size and the set reference value.
  • the distance of the block 701 from the substrate 60 to be vapor-deposited if the measured result is less than the reference value, the distance between the magnetic block 701 and the substrate 60 to be vapor-deposited can be reduced, and if the measured result is greater than the reference value, the adjustment can be adjusted.
  • the distance from the magnet block 701 to the substrate 60 to be vapor-deposited is large.
  • the reference value set above is generally an empirical value, or may be determined based on the vapor deposition result.
  • all of the magnetic blocks 701 are equal in size.
  • the adsorption device 70 includes a plurality of magnetic blocks 701 and a traction device 702.
  • the traction device 702 includes a plurality of adjustment bars 702a disposed above the magnetic block 701 and corresponding to the magnetic block 701, for driving the magnetic block 701 to move up and down.
  • the specific manner of the pulling device 702 to move the magnetic block 701 by the adjusting rod 702a is as follows: the lengths of the plurality of adjusting rods 702a are preferably the same, and the initial state of the plurality of adjusting rods 702a may be set at the same height. And all the magnetic blocks 701 connected to the plurality of adjustment bars 702a are also at the same height, so that the initial measurement can be obtained according to the measurement.
  • the initial magnetic field size distribution selectively adjusts the height of the magnetic block 701 whose magnetic field is higher or lower than the reference value by the corresponding adjustment rod 701, and the height of the magnetic block 701 equal to the reference value does not need to be adjusted.
  • the number of the magnetic blocks 701 is 135 in 27 rows and 5 columns.
  • the magnetic field sizes of the magnetic blocks 701 of the first 10 rows measured by the magnetometer are as follows:
  • the height of each of the magnetic blocks 701 greater than 80T and less than 80T or the distance from the substrate 60 to be vapor-deposited can be adjusted by the adjustment rod 701 to make all the magnetic blocks
  • the magnetic field size tends to 80T.
  • the traction device 702 can also include a controller that controls the movement of either of the adjustment bars 702a up and down. That is, the external force applied to the adjusting rod 702a by the controller can drive the adjusting rod 702a to move up and down relative to the substrate to be vapor-deposited 60, thereby achieving the purpose of moving the magnetic block 701 connected to the adjusting rod 702a.
  • FIG. 3 is a block diagram showing the structure of the adjustment bar 702a connected to the magnetic block 701 according to an embodiment of the present invention.
  • the adjustment rod 702a and the magnetic block 701 can be connected by screwing.
  • the surface of the adjusting rod 702a has a thread
  • the magnetic block 701 has a screw hole with respect to the surface of the adjusting rod 702a, and the screw hole matches the thread of the surface of the adjusting rod 702a.
  • the two can form a screw joint.
  • they can also be connected in any other suitable way, such as snap-fit connections, bonding, and the like.
  • the adjusting rod 702a can be easily connected to the corresponding magnetic block 701 by rotating each of the adjusting rods 702a.
  • each adjusting rod 702a can be controlled to rotate the same number of turns, so that each of the magnetic blocks 701 can also be at the same height, on the basis of which When the height of a certain magnetic block 701 is adjusted, the adjustment rod 702a may be directly raised or lowered by a certain height.
  • FIG. 4 shows a schematic structural view of a traction device 702 in accordance with another embodiment of the present invention.
  • the traction device 702 shown in Figure 4 also includes a fixed plate 702b for securing the adjustment rod 702a.
  • the fixing plate 702b has a number of through holes 702b1 corresponding to the adjusting bars 702a, and the surface of the through holes 702b1 has two opposite grooves (not shown); the adjusting bar 702a can pass through the through holes 702b1.
  • the surface of the adjustment rod 702a has a plurality of pairs of elastic protrusions 702a1, each pair of protrusions 702a1 matching the grooves on the surface of the through hole 702b1.
  • the protrusion 702a1 is elastic, when the adjustment rod 702a is pushed and pulled by an external force, the pair of protrusions 702a1 originally located in the groove can move upward or downward relative to the groove as the external force acts. When the adjustment rod 702a is moved to a certain position, the position of the adjustment rod 702a at this time can be fixed by the other pair of projections 702a1 at the same position as the groove.
  • a part of the elastic protrusion 702a1 here may be embedded in the adjusting rod 702a, and when the external force is pressed, the elastic protrusion 702a1 may be squeezed into the adjusting rod 702a, thereby ensuring that the adjusting rod 702a can be opposite The through hole 702b1 of the fixed plate 702b moves.
  • Fig. 5 is a view showing the configuration of an evaporation apparatus 01 according to a second embodiment of the present invention.
  • the vapor deposition apparatus 01 shown in Fig. 5 is similar to the vapor deposition apparatus 01 shown in Fig. 1, except that the vapor deposition apparatus 01 shown in Fig. 5 includes a fixing plate 702b as shown in Fig. 4, which is fixed by The lifting mechanism 703 of the upper surface of the vapor deposition chamber 10 is connected, and the lifting mechanism 703 is used to drive the fixing plate 702b to move up and down. Therefore, the fixing plate 702b can be driven by the lifting mechanism 703 in a proper position to connect with the adjusting rod 702a fixed on the fixing plate 702b. All of the magnetic blocks 701 that are connected are in an appropriate initial position. On this basis, the height of the magnet block 701 is adjusted by adjusting the height of the adjustment rod 702a.
  • Fig. 6 is a view showing the configuration of a vapor deposition apparatus 01 according to a third embodiment of the present invention.
  • the vapor deposition apparatus 01 shown in FIG. 6 further includes a telescopic support frame 80 disposed on the sidewall of the vapor deposition chamber 10, and the telescopic support frame 80 can be along the sidewall of the vertical vapor deposition chamber 10. The direction is flexible.
  • the separated or replaced magnet block 701 can be carried by controlling the telescopic support frame 80 to extend to reach the corresponding position. Then, the opening 801 at the position where the telescopic support frame 80 is in contact with the vapor deposition chamber 10 can be disposed, so that the separated or replaced magnetic block 701 can be transported out of the evaporation chamber through the opening 801 by controlling the contraction of the telescopic support frame 80. Room 10.
  • the opening 801 can be opened and closed by a shutter.
  • Fig. 7 is a view showing the configuration of an evaporation apparatus 01 according to a fourth embodiment of the present invention.
  • the vapor deposition apparatus 01 shown in FIG. 7 further includes a driving device 90 disposed outside the vapor deposition chamber 10 and connected to the telescopic support frame 80, and the driving device 90 is used to control the telescopic support frame 80. Telescopic.
  • FIG. 8 shows a schematic structural view of an adsorption device 70 according to another embodiment of the present invention. Similar to FIG. 2, the adsorption device shown in FIG. 8 also includes a traction device 702 and a magnetic block 701. In addition, the adsorption device 70 shown in FIG. 8 further includes a magnet block support plate 100 for carrying the magnet block 701, wherein the magnet block support plate 100 includes a plurality of movable blocks 100a, and the surface area of any of the movable blocks 100a is larger than the movable block. The surface area of the magnetic block 701 carried.
  • the traction device 702 can pull any one of the movable blocks 100a to move up and down relative to the substrate to be vapor-deposited 60, so that the magnetic block 701 carried by the movable block 100a moves up and down relative to the substrate 60 to be vapor-deposited.
  • the initial magnetic field size distribution is obtained by measuring the magnitude of the magnetic field of all the magnetic blocks 701 in this state, and then the control of each movable block 100a by the pulling device 702 is selectively selected.
  • the height of the magnetic block 701 above or below the reference value is adjusted, and the height of the magnetic block 701 equal to the reference value does not need to be adjusted.
  • the traction device 702 may include a traction bar 702c disposed at four corners of each of the movable blocks 100a for driving the movable block 100a to move up and down.
  • the evaporation apparatus 01 may further include a control device (not shown) coupled to the drawbar 702c to control the movement of the drawbar 702c.
  • a control device (not shown) coupled to the drawbar 702c to control the movement of the drawbar 702c.
  • the magnetic block 701 can be moved up and down by the movement of the movable block 100a.
  • the adsorption device 70 in the embodiment shown in FIG. 8 is changed to one by adding the magnet block support plate 100, the movable block 100a, and an adjustment bar 702b corresponding to one magnetic block.
  • the magnetic block corresponds to the four traction bars 702c, so that the process of moving the magnetic block up and down by the traction device 702 is more stable and more accurate.

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  • Chemical Kinetics & Catalysis (AREA)
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Abstract

公开了一种蒸镀装置，包括：蒸镀腔室、设置于蒸镀腔室内的蒸镀源、掩模板支撑架和基板支撑架，其中所述掩模板支撑架用于承载金属掩模板，所述基板支撑架用于承载待蒸镀基板，且所述金属掩模板设置于所述蒸镀源和所述待蒸镀基板之间，其特征在于，所述蒸镀装置还包括设置于所述蒸镀腔室内的吸附装置，所述吸附装置包括：设置于所述待蒸镀基板远离所述金属掩模板一侧的多个呈矩阵排列的磁块，以及用于调节每个所述磁块相对所述待蒸镀基板上下移动的牵引装置。这种蒸镀装置可以使金属掩模板与待蒸镀基板紧密贴合，从而在子像素单元蒸镀时形成正确的图案，并且使所有磁块的磁场趋于一致，避免由于磁场不均使金属掩模板形变而对上述图案造成影响。

Description

一种蒸镀装置 技术领域
本发明涉及显示技术领域的制造设备，尤其涉及一种蒸镀装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，简称OLED)是一种有机薄膜电致发光器件，其具有易形成柔性结构、视角宽等优点；因此，利用有机发光二极管的显示技术已成为一种重要的显示技术。
OLED的全彩显示一般包括R(红)G(绿)B(蓝)子像素独立发光、或白光OLED结合彩色滤光膜等方式。其中，RGB子像素独立发光是目前采用最多的彩色模式，其是利用子像素单元中的有机发光材料独立发光。
目前，有机发光材料层一般都是通过对有机材料进行真空蒸发镀膜形成。其中，对于RGB子像素独立发光的OLED，由于每个RGB子像素单元采用不同的有机发光材料，因而RGB子像素单元的有机发光层需要分别进行蒸镀，在此过程中一般采用金属掩模板，使其开口区域与子像素区域对准来在不同子像素区域蒸镀不同颜色的发光材料。
然而，由于金属掩模板比较薄，一般只有几十微米厚，很容易发生形变，因而在实际使用中不可避免地会导致其与待蒸镀基板贴合的不紧，从而使得在蒸镀有机发光材料时，不能形成正确的图案。
发明内容
本发明的目的是提供一种能够克服上述缺陷的蒸镀装置。根据本发明的一个方面，提供了一种蒸镀装置，包括：蒸镀腔室、设置于蒸镀腔室内的蒸镀源、掩模板支撑架和基板支撑架，其中掩模板支撑架用于承载金属掩模板，基板支撑架用于承载待蒸镀基板，且金属掩模板设置于蒸镀源和待蒸镀基板之间；该蒸镀装置还包括：设置于蒸镀腔室内的吸附装置，该吸附装置包括：设置于待蒸镀基板远离金属掩模板一侧的多个呈矩阵排列的磁块，以及用于调节每个磁块相对待蒸镀基板上下移动的牵引装置。
根据本发明的蒸镀装置通过在蒸镀腔室内引入吸附装置实现了如下技术效果：首先，通过吸附装置所包括的设置于待蒸镀基板远离金属掩模板一侧的多个磁块产生的磁场，可以使金属掩模板与位于其上方的待蒸镀基板紧密贴合，从而在子像素单元蒸镀时形成正确的图案；其次，在此基础上，通过吸附装置中所包括的牵引装置对每个磁块相对待蒸镀基板的高度进行控制，可以使所有磁块的磁场趋于一致，避免由于磁场不均使金属掩模板发生形变，从而避免对上述图案造成影响。
根据本发明的蒸镀装置的一个实施例，牵引装置包括设置于磁块上方、且与磁块一一对应的多个调节棒，其用于带动磁块上下移动。
根据本发明的蒸镀装置的一个实施例，各个调节棒与对应的磁块通过螺纹连接方式进行连接，其中调节棒的表面具有螺纹，磁块相对调节棒的表面具有螺孔，螺孔与调节棒表面的螺纹相吻合从而形成螺接。此外调节棒与磁块也可以通过其他方式连接，比如卡扣、粘结等方式。
根据本发明的蒸镀装置的一个实施例，牵引装置还包括用于固定调节棒的固定板；其中固定板具有与调节棒对应个数的贯穿孔以供调节棒贯穿且贯穿孔的表面具有两个相对的凹槽；并且调节棒的表面具有多对弹性凸起，每对凸起与位于贯穿孔表面的凹槽相匹配以用于在调节棒贯穿固定板的贯穿孔时将该调节棒固定住。
根据本发明的蒸镀装置的一个实施例，固定板通过与固定在蒸镀腔室上底面的升降机构连接，该所升降机构用于带动固定板上下移动。
根据本发明的蒸镀装置的一个实施例，牵引装置还包括控制任一个调节棒上下移动的控制器。
根据本发明的蒸镀装置的一个实施例，蒸镀装置还包括设置于蒸镀腔室侧壁上的伸缩支撑架和设置在伸缩支撑架与蒸镀腔室接触位置处的开口，其中伸缩支撑架沿垂直蒸镀腔室侧壁的方向可伸缩并且用于通过伸展承载分离或替换下来的磁块并通过收缩将分离或替换下来的磁块经开口运送出蒸镀腔室。
根据本发明的蒸镀装置的一个实施例，蒸镀装置还包括设置于蒸镀腔室外侧且与伸缩支撑架相连的驱动装置；其中，该驱动装置用于控制伸缩支撑架的伸缩。
根据本发明的蒸镀装置的一个实施例，吸附装置还包括用于承载磁块的磁块支撑板，该磁块支撑板可以包括多个活动块，其中任一个活动块的表面积大于与该活动块承载的磁块的表面积，并且牵引装置用于通过牵引活动块上下移动来调节该活动块所承载的磁块相对待蒸镀基板上下移动。
根据本发明的蒸镀装置的一个实施例，牵引装置包括设置于每个活动块四个角的牵引棒，用于带动活动块上下移动。
根据本发明的另一方面，提供了一种上述蒸镀装置中的吸附装置的工作方法，该方法包括以下步骤：
利用牵引装置将吸附装置中的所有磁块置于同一个水平面上，即所有磁块到待蒸镀基板的距离相等；
通过磁力计测量每个磁块的磁场大小，得到初始磁场大小分布；以及
根据磁力计测得的结果和设定的基准值，利用牵引装置分别调整大于基准值或小于基准值的磁块到待蒸镀基板的距离，以使得所有磁块的磁场都趋于基准值。
附图说明
为了更清楚地说明本发明的技术方案，下面将对与本发明的一些实施例对应的附图作简单地介绍。显而易见地，下面的附图仅仅示意性的和说明性的，且不一定按比例绘制。对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。另外，为了清楚起见，附图中没有绘出与本发明无关的结构。
图1示出了根据本发明第一实施例的蒸镀装置的结构示意图；
图2示出了根据本发明一个实施例的吸附装置的结构示意图；
图3示出了根据本发明一个实施例的吸附装置中调节棒与磁块连接的结构示意图；
图4示出了根据本发明一个实施例的牵引装置的结构示意图；
图5示出了根据本发明第二实施例的蒸镀装置的结构示意图；
图6示出了根据本发明第三实施例的蒸镀装置的结构示意图；
图7示出了根据本发明第四实施例的蒸镀装置的结构示意图；以及
图8示出了根据本发明另一个实施例的吸附装置的结构示意图。
附图标记：
01-蒸镀装置；10-蒸镀腔室；20-蒸镀源；30-掩模板支撑架；40-基板支撑架；50-金属掩模板；60-待蒸镀基板；70-吸附装置；701-磁块；702-牵引装置；702a-调节棒；702b-固定板；702a1-凸起；702b1-贯穿孔；702c-牵引棒；703-升降机构；80-伸缩支撑架；801：开口；90-驱动装置；100-磁块支撑板；100a-活动块。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1示出了根据本发明第一实施例的蒸镀装置01的结构示意图。该蒸镀装置01包括：蒸镀腔室10、设置于蒸镀腔室内的蒸镀源20、掩模板支撑架30和基板支撑架40，掩模板支撑架30用于承载金属掩模板50，基板支撑架40用于承载待蒸镀基板60，且金属掩模板50设置于蒸镀源20和待蒸镀基板60之间；进一步地，蒸镀装置01还包括：设置于蒸镀腔室10内的吸附装置70。该吸附装置70包括：设置于待蒸镀基板60远离金属掩模板50一侧的多个呈矩阵排列的磁块701，以及用于调节每个磁块相对待蒸镀基板60上下移动的牵引装置702。
在待蒸镀基板60远离金属掩模板50的一侧设置磁块701的目的是：通过磁块产生的磁场使金属掩模板50与位于其上方的待蒸镀基板60紧密贴合，从而在子像素单元蒸镀时形成正确的图案。设置牵引装置702的目的是：因为当这些磁块701处于同一个水平面时，有可能会出现磁场不均的情况，因此，通过牵引装置702调整各个磁块701相对待蒸镀基板60的距离，便可以改变这些磁块701的磁场大小，从而使所有磁块701的磁场趋于一致，避免由于磁场不均使金属掩模板50发生形变，从而避免对蒸镀图案造成影响。
如图1所示，蒸镀源20设置于蒸镀腔室10的下部，且用于输出蒸镀材料，例如红色发光材料、绿色发光材料、蓝色发光材料。当然， 对于OLED显示器的每个子像素单元来说，除包括发光层外，其一般还包括设置于阳极和发光层之间的空穴传输层、设置于阴极和发光层之间的电子传输层；此外，还可以包括设置于阳极和空穴传输层之间的空穴注入层、设置于阴极和电子传输层之间的电子注入层等；这些功能层均可以通过蒸镀源20输出相应的材料进行蒸镀而得到相应的图案。
基板支撑架40设置于蒸镀腔室10的上部，待蒸镀基板60的边缘位于基板支撑架40上；其中待蒸镀基板60可以包括玻璃衬底基板，以及设置在玻璃衬底基板上的且位于每个子像素单元的薄膜晶体管等，具体根据所要形成显示器的功能而定。蒸镀好的基板或待蒸镀基板60通过设置于蒸镀腔室10侧壁的上的开口(未示出)进行交换，该开口可以通过活门进行开闭。
掩模板支撑架30设置于基板支撑架40的下方，金属掩膜板50的边缘位于掩模板支撑架40上。
牵引装置702可以采取如下方式调节磁块相对待蒸镀基板60上下移动：可以先使所有磁块701处于同一个水平面上，即所有磁块701到待蒸镀基板60的距离相等；在此基础上，可以通过磁力计测量每个磁块701的磁场大小，得到一个初始磁场大小分布；并且根据测得的磁场大小的结果和设定的基准值，分别调整大于基准值或小于基准值的磁块701距离待蒸镀基板60的距离，若测得的结果小于基准值，则可以调小该磁块701到待蒸镀基板60的距离，而若测得的结果大于基准值，则可以调大该磁块701到待蒸镀基板60的距离。上述设定的基准值一般为经验值，或者也可以根据蒸镀结果来确定。
优选地，所有磁块701大小相等。
图2示出了根据本发明一个实施例的吸附装置70的结构示意图。如图2所示，吸附装置70包括多个磁块701以及牵引装置702。牵引装置702包括设置于磁块701上方、且与磁块701一一对应的多个调节棒702a，其用于带动磁块701上下移动。
在该实施例中，牵引装置702通过调节棒702a带动磁块701移动的具体方式如下：多个调节棒702a的长度优选地为相同的，同时可以设置多个调节棒702a的初始状态处于同一高度，且与多个调节棒702a连接的所有磁块701也处于相同的高度，这样可以根据测量得到的初 始磁场大小分布，有选择地通过相应的调节棒701来调节磁场高于或低于基准值的磁块701的高度，而等于基准值的磁块701高度则无需进行调节。
例如，磁块701的个数为27行5列共135个，当所有磁块701处于同一高度时，通过磁力计测量的前10行的磁块701的磁场大小如下表所示：
Figure PCTCN2014085383-appb-000001
在此情况下，当设定基准磁场大小为80T时，便可以通过调节棒701来调节大于80T和小于80T的各磁块701的高度或相对待蒸镀基板60的距离，以使所有磁块的磁场大小趋于80T。
优选地，牵引装置702还可以包括控制任一个调节棒702a上下移动的控制器。即：通过控制器施加在调节棒702a上的外力，可以带动调节棒702a相对待蒸镀基板60上下移动，从而达到移动与调节棒702a连接的磁块701的目的。
图3示出了根据本发明一个实施例的调节棒702a与磁块701连接的结构示意图。优选地，调节棒702a与磁块701可以通过螺接方式进行连接。如图3所示，调节棒702a的表面具有螺纹；磁块701相对调节棒702a的表面具有螺孔，该螺孔与调节棒702a表面的螺纹相吻合， 从而二者可以形成螺接。当然，它们也可以采取任何其他适当的方式进行连接，比如卡扣连接、粘接等等。
这样调节棒702a与磁块701通过如图3所示的螺接方式连接的情况下，通过旋转每个调节棒702a，便可以很方便的将调节棒702a与对应的磁块701连接起来。其中，在调节棒702a的长度相同且高度一致的情况下，可以控制每个调节棒702a旋转相同的圈数，便可以使每个磁块701也处于相同的高度，在此基础上，若要调整某个磁块701的高度时，直接使该调节棒702a上升或下降一定高度即可。
图4示出了根据本发明的另一个实施例的牵引装置702的结构示意图。与图2相比，如图4所示的牵引装置702还包括用于固定调节棒702a的固定板702b。如图4所示，固定板702b具有与调节棒702a对应个数的贯穿孔702b1，且贯穿孔702b1的表面具有两个相对的凹槽(未示出)；调节棒702a可以穿过贯穿孔702b1，且在调节棒702a的高度方向上，调节棒702a的表面具有多对弹性凸起702a1，每对凸起702a1与位于贯穿孔702b1表面的凹槽相匹配。这样，当调节棒702a穿入固定板702b的贯穿孔时，通过贯穿孔702b1上的凹槽，以及调节棒702a上的凸起702a1，可以使调节棒702a固定在固定板702b上，而不会发生左右漂移。在此基础上，由于凸起702a1为弹性的，当通过外力推拉调节棒702a时，原来位于凹槽内的一对凸起702a1便可以随着外力的作用相对凹槽向上或向下移动，当调节棒702a移动到一定位置时，可以通过与凹槽处于同一位置的另一对凸起702a1来固定此时调节棒702a的位置。
需要说明的是，这里的弹性凸起702a1的一部分可以嵌入调节棒702a内，并且当遇到外力挤压时，弹性凸起702a1可以被挤压进调节棒702a内，从而保证调节棒702a可以相对固定板702b的贯穿孔702b1移动。
图5示出了根据本发明第二实施例的蒸镀装置01的结构示意图。如图5所示蒸镀装置01与图1所示的蒸镀装置01类似，不同之处在于图5所示的蒸镀装置01包括如图4所示的固定板702b，其通过与固定在蒸镀腔室10上底面的升降机构703连接，该升降机构703用于带动固定板702b上下移动。从而，通过升降机构703可以带动固定板702b处于一个合适的位置，以使与固定在固定板702b上的调节棒702a连 接的所有磁块701处于合适的初始位置。在此基础上，通过调整调节棒702a的高度来调节磁块701的高度。
图6示出了根据本发明第三实施例的蒸镀装置01的结构示意图。与图5相比，如图6所示的蒸镀装置01还包括设置于蒸镀腔室10侧壁上的伸缩支撑架80，该伸缩支撑架80可沿垂直蒸镀腔室10侧壁的方向伸缩。
这样，在需要将磁块从调节棒702a上分离或需要替换磁块701时，可以通过控制伸缩支撑架80伸展以到达相应的位置，来承载分离或替换下来的磁块701。然后，可以通过设置在伸缩支撑架80与蒸镀腔室10接触位置处的开口801，于是可以通过控制伸缩支撑架80收缩而将分离或替换下来的磁块701经开口801运送出蒸镀腔室10。该开口801可以通过活门进行开闭。
图7示出了根据本发明第四实施例的蒸镀装置01的结构示意图。与图6相比，如图7所示的蒸镀装置01还包括设置于蒸镀腔室10外侧且与伸缩支撑架80相连的驱动装置90，该驱动装置90用于控制伸缩支撑架80的伸缩。
图8示出了根据本发明另一个实施例的吸附装置70的结构示意图。与图2类似地，图8所示的吸附装置也包括牵引装置702和磁块701。此外，图8所示的吸附装置70还包括用于承载磁块701的磁块支撑板100，其中磁块支撑板100包括多个活动块100a，并且任一个活动块100a的表面积大于该活动块所承载的磁块701的表面积。在此情况下，牵引装置702可以牵引任一个活动块100a相对待蒸镀基板60上下移动，从而实现该活动块100a所承载的磁块701相对于待蒸镀基板60上下移动。
这样，当所有活动块100a处于同一水平位置时，通过测量该状态下所有磁块701的磁场大小，得到初始磁场大小分布，然后有选择的通过牵引装置702对每个活动块100a的控制，来调节高于或低于基准值的磁块701的高度，而等于基准值的磁块701高度则无需进行调节。
进一步地，参考图8所示，牵引装置702可以包括设置于每个活动块100a四个角的牵引棒702c，用于带动活动块100a上下移动。
优选地，蒸镀装置01还可以包括与牵引棒702c连接的控制装置(未示出)，以控制牵引棒702c的移动。这样，当某个磁块701的高 度需要调节时，通过控制与该磁块701接触的活动块100a的四个角处的牵引棒702c，便可以通过活动块100a的移动来带动磁块701进行上下移动。
与图2所示的吸附装置70相比，如图8所示的实施例中的吸附装置70通过增加磁块支撑板100、活动块100a以及将一个磁块对应的一个调节棒702b改变为一个磁块对应四个牵引棒702c，使得牵引装置702上下移动磁块的过程更稳定、更精确。
以上，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内可轻易想到的变化或替换都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。

Claims (11)

  1. 一种蒸镀装置，包括蒸镀腔室、设置于蒸镀腔室内的蒸镀源、掩模板支撑架和基板支撑架，其中所述掩模板支撑架用于承载金属掩模板，所述基板支撑架用于承载待蒸镀基板，且所述金属掩模板设置于所述蒸镀源和所述待蒸镀基板之间，
    其特征在于，所述蒸镀装置还包括设置于所述蒸镀腔室内的吸附装置，所述吸附装置包括：设置于所述待蒸镀基板远离所述金属掩模板一侧的多个呈矩阵排列的磁块，以及用于调节每个所述磁块相对所述待蒸镀基板上下移动的牵引装置。
  2. 根据权利要求1所述的蒸镀装置，其特征在于，所述牵引装置包括设置于所述磁块上方且与所述磁块一一对应的多个调节棒，其用于带动所述磁块上下移动。
  3. 根据权利要求2所述的蒸镀装置，其特征在于，各个调节棒与对应的磁块通过螺纹或卡扣连接方式进行连接。
  4. 根据权利要求2所述的蒸镀装置，其特征在于，所述牵引装置还包括用于固定所述调节棒的固定板，
    其中所述固定板具有与所述调节棒对应个数的贯穿孔以供调节棒贯穿且所述贯穿孔的表面具有两个相对的凹槽；并且所述调节棒的表面具有多对弹性凸起，每对凸起与位于所述贯穿孔表面的所述凹槽相匹配以用于在调节棒贯穿固定板的贯穿孔时将该调节棒固定住。
  5. 根据权利要求4所述的蒸镀装置，其特征在于，所述吸附装置还包括固定在所述蒸镀腔室上底面的升降机构，其用于通过与所述固定板连接带动所述固定板上下移动。
  6. 根据权利要求2所述的蒸镀装置，其特征在于，所述牵引装置还包括控制所述调节棒上下移动的控制器。
  7. 根据权利要求2至6任一项所述的蒸镀装置，其特征在于，所述蒸镀装置还包括：设置于所述蒸镀腔室侧壁上的伸缩支撑架和设置在伸缩支撑架与蒸镀腔室接触位置处的开口，其中所述伸缩支撑架沿垂直所述蒸镀腔室侧壁的方向可伸缩并且用于通过伸展承载分离或替换下来的磁块并通过收缩将所述分离或替换下来的磁块经开口运送出蒸镀腔室。
  8. 根据权利要求7所述的蒸镀装置，其特征在于，所述蒸镀装置还包括设置于所述蒸镀腔室外侧且与所述伸缩支撑架相连的驱动装置，所述驱动装置用于控制所述伸缩支撑架的伸缩。
  9. 根据权利要求1所述的蒸镀装置，其特征在于，所述吸附装置还包括用于承载所述磁块的磁块支撑板，所述磁块支撑板包括多个活动块，其中任一个活动块的表面积大于与该活动块承载的磁块的表面积，并且所述牵引装置用于通过牵引所述活动块上下移动来调节该活动块所承载的磁块相对所述待蒸镀基板上下移动。
  10. 根据权利要求9所述的蒸镀装置，其特征在于，所述牵引装置包括设置于每个所述活动块四个角的牵引棒，用于带动所述活动块上下移动。
  11. 根据权利要求1的蒸镀装置中的吸附装置的工作方法，该方法包括以下步骤：
    利用牵引装置将吸附装置中的所有磁块置于同一个水平面上，即所有磁块到待蒸镀基板的距离相等；
    通过磁力计测量每个磁块的磁场大小，得到初始磁场大小分布；
    根据磁力计测得的结果和设定的基准值，利用牵引装置分别调整大于基准值或小于基准值的磁块到待蒸镀基板的距离，以使得所有磁块的磁场都趋于基准值。
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103981491A (zh) 2014-04-30 2014-08-13 京东方科技集团股份有限公司 一种蒸镀装置
CN105154830B (zh) 2015-09-06 2017-04-19 京东方科技集团股份有限公司 一种固定方法和蒸镀方法
CN106756801A (zh) * 2015-11-24 2017-05-31 上海和辉光电有限公司 一种蒸镀设备及蒸镀工艺
CN105543784B (zh) * 2016-01-04 2017-12-05 京东方科技集团股份有限公司 一种蒸镀系统
CN105506548B (zh) 2016-03-01 2018-05-25 京东方科技集团股份有限公司 一种掩膜板修复装置、修复方法及蒸镀系统
CN106048536A (zh) * 2016-06-06 2016-10-26 京东方科技集团股份有限公司 一种蒸镀装置及待蒸镀基板加工方法
CN106637073A (zh) * 2016-10-14 2017-05-10 深圳市华星光电技术有限公司 真空蒸镀装置
CN106756806A (zh) * 2016-12-29 2017-05-31 长春海谱润斯科技有限公司 一种蒸镀装置及有机电致发光显示面板蒸镀方法
DE102017105374A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung
DE102017105379A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Substrathalteranordnung mit Maskenträger
CN106939408B (zh) * 2017-05-08 2019-09-13 武汉华星光电技术有限公司 一种蒸镀装置
CN106978591B (zh) * 2017-05-16 2019-07-02 昆山国显光电有限公司 蒸镀组件及蒸镀设备
CN107904566A (zh) * 2017-12-15 2018-04-13 京东方科技集团股份有限公司 一种蒸镀载板及蒸镀装置
CN108220899A (zh) * 2018-01-02 2018-06-29 京东方科技集团股份有限公司 一种溅射设备
CN108203805A (zh) * 2018-01-27 2018-06-26 武汉华星光电半导体显示技术有限公司 蒸镀设备及其磁性固定板
WO2019171432A1 (ja) * 2018-03-05 2019-09-12 堺ディスプレイプロダクト株式会社 蒸着マスク、その製造方法及び有機ｅｌ表示装置の製造方法
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CN109680245A (zh) * 2019-02-20 2019-04-26 湖畔光电科技（江苏）有限公司 一种新型蒸镀用金属掩模板及蒸镀装置
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KR20220126847A (ko) * 2021-03-09 2022-09-19 삼성디스플레이 주식회사 마그넷 조립체 및 이를 포함하는 증착 장치
CN114540769A (zh) * 2022-01-17 2022-05-27 合肥莱德装备技术有限公司 一种集成式蒸镀系统及多基板蒸镀装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1426118A (zh) * 2001-12-10 2003-06-25 高级网络服务公司 制作电致发光显示器的、使用电磁铁的蒸镀装置及采用此装置的蒸镀方法
KR101107181B1 (ko) * 2010-01-04 2012-01-25 삼성모바일디스플레이주식회사 마스크 흡착용 자석 조립체
CN103116428A (zh) * 2013-01-30 2013-05-22 无锡力合光电传感技术有限公司 一种在衬底上固定掩膜版的装置、使用方法及其用途
CN103981491A (zh) * 2014-04-30 2014-08-13 京东方科技集团股份有限公司 一种蒸镀装置
CN203807547U (zh) * 2014-04-30 2014-09-03 京东方科技集团股份有限公司 一种蒸镀装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4257497B2 (ja) * 2003-02-26 2009-04-22 株式会社日立ハイテクノロジーズ 真空蒸着方法及び真空蒸着装置、並びにこの真空蒸着方法により製造したｅｌパネル
CN100376906C (zh) 2004-12-11 2008-03-26 鸿富锦精密工业（深圳）有限公司 彩色滤光片
KR20100024945A (ko) * 2007-12-27 2010-03-08 캐논 아네르바 가부시키가이샤 처리장치, 전자방출소자 및 유기 ｅｌ 디스플레이의 생산방법
CN101620290B (zh) 2008-06-30 2012-03-07 中华映管股份有限公司 彩色导光板以及液晶显示装置
JP2011233510A (ja) * 2010-04-05 2011-11-17 Canon Inc 蒸着装置
KR101810683B1 (ko) * 2011-02-14 2017-12-20 삼성디스플레이 주식회사 자석 수단의 교체가 가능한 마스크 고정장치 및 이를 포함하는 증착장치
KR20130007310A (ko) 2011-06-30 2013-01-18 삼성디스플레이 주식회사 유기 발광 소자, 유기 발광 표시 장치 및 그 제조 방법
CN202530152U (zh) * 2012-04-17 2012-11-14 四川虹视显示技术有限公司 有机物蒸镀设备
CN203414701U (zh) 2013-07-29 2014-01-29 京东方科技集团股份有限公司 显示基板、显示装置
CN103441138B (zh) 2013-08-13 2016-06-22 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
CN203466191U (zh) 2013-08-13 2014-03-05 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN203883008U (zh) 2014-04-15 2014-10-15 京东方科技集团股份有限公司 一种显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1426118A (zh) * 2001-12-10 2003-06-25 高级网络服务公司 制作电致发光显示器的、使用电磁铁的蒸镀装置及采用此装置的蒸镀方法
KR101107181B1 (ko) * 2010-01-04 2012-01-25 삼성모바일디스플레이주식회사 마스크 흡착용 자석 조립체
CN103116428A (zh) * 2013-01-30 2013-05-22 无锡力合光电传感技术有限公司 一种在衬底上固定掩膜版的装置、使用方法及其用途
CN103981491A (zh) * 2014-04-30 2014-08-13 京东方科技集团股份有限公司 一种蒸镀装置
CN203807547U (zh) * 2014-04-30 2014-09-03 京东方科技集团股份有限公司 一种蒸镀装置

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