WO2019202902A1 - 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、有機elディスプレイの製造方法、及びパターンの形成方法 - Google Patents
蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、有機elディスプレイの製造方法、及びパターンの形成方法 Download PDFInfo
- Publication number
- WO2019202902A1 WO2019202902A1 PCT/JP2019/011768 JP2019011768W WO2019202902A1 WO 2019202902 A1 WO2019202902 A1 WO 2019202902A1 JP 2019011768 W JP2019011768 W JP 2019011768W WO 2019202902 A1 WO2019202902 A1 WO 2019202902A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vapor deposition
- resin
- metal layer
- mask
- deposition mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Definitions
- the resin material may be a cured product of a polyimide resin.
- the vapor deposition mask satisfies the relationship of the following formula (3). 0.55 ⁇ ((total area of region A and region B) / area of region B) ⁇ 1.45 Formula (3)
- ((total of A region and B region) (Area) / Area of the B region) is a value larger than 1.
- a metal portion constituting the metal layer 10, that is, a portion other than the through hole 15 of one metal layer may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 8, and as shown in FIG.
- the size of the metal layer 10 may be made smaller than the resin mask 20 to expose the outer peripheral portion of the resin mask 20. Further, the size of the metal layer 10 may be made larger than that of the resin mask 20, and a part of the metal portion may protrude outward in the horizontal direction or in the vertical direction of the resin mask. In any case, the size of the through hole 15 of one metal layer is configured to be smaller than the size of the resin mask 20.
- the vapor deposition mask 100 of the third embodiment when the vapor deposition mask 100 of the third embodiment is viewed in plan from the resin mask 20 side, when the resin mask 20 exhibits a rectangle having a long side and a short side, You may arrange
- the shape of the metal layer may be a band shape having a predetermined angle with respect to the long side of the resin mask.
- the quadrilateral is not limited to a rectangle, and may be a trapezoid or a parallelogram, for example. Other quadrilaterals may be used.
- the shape of the resin mask 20 in plan view may be a shape other than the quadrilateral.
- the shape and arrangement of the metal layer 10 described in the present specification can be applied as appropriate to the resin mask 20 having a shape other than the quadrangular shape when the resin mask 20 is planarized.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/042,297 US20210013415A1 (en) | 2018-04-19 | 2019-03-20 | Vapor deposition mask, frame-equipped vapor deposition mask, vapor deposition mask preparation body, method of manufacturing vapor deposition mask, method of manufacturing organic semiconductor element, method of manufacturing organic el display, and method of forming pattern |
| CN202210638781.1A CN115110027B (zh) | 2018-04-19 | 2019-03-20 | 一种蒸镀掩模及其制造方法 |
| CN201980019365.XA CN111886357B (zh) | 2018-04-19 | 2019-03-20 | 一种蒸镀掩模及其制造方法 |
| KR1020207026033A KR102728020B1 (ko) | 2018-04-19 | 2019-03-20 | 증착 마스크, 프레임 부착 증착 마스크, 증착 마스크 준비체, 증착 마스크의 제조 방법, 유기 반도체 소자의 제조 방법, 유기 el 디스플레이의 제조 방법, 및 패턴의 형성 방법 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018080690A JP6658790B2 (ja) | 2018-04-19 | 2018-04-19 | 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、有機elディスプレイの製造方法、及びパターンの形成方法 |
| JP2018-080690 | 2018-04-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019202902A1 true WO2019202902A1 (ja) | 2019-10-24 |
Family
ID=68240226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2019/011768 Ceased WO2019202902A1 (ja) | 2018-04-19 | 2019-03-20 | 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、有機elディスプレイの製造方法、及びパターンの形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20210013415A1 (enExample) |
| JP (1) | JP6658790B2 (enExample) |
| KR (1) | KR102728020B1 (enExample) |
| CN (2) | CN115110027B (enExample) |
| TW (1) | TWI777055B (enExample) |
| WO (1) | WO2019202902A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111088474B (zh) * | 2020-01-03 | 2022-07-05 | 京东方科技集团股份有限公司 | 一种掩膜板及其制作方法 |
| KR20210091382A (ko) * | 2020-01-13 | 2021-07-22 | 삼성디스플레이 주식회사 | 마스크, 이의 제조 방법, 및 표시 패널 제조 방법 |
| KR102868771B1 (ko) * | 2020-10-28 | 2025-10-13 | 삼성디스플레이 주식회사 | 마스크 프레임 및 이를 포함하는 증착 장치 |
| TWD215838S (zh) | 2021-05-07 | 2021-12-01 | 景美科技股份有限公司 | 框架之部分 |
| TWI777614B (zh) * | 2021-06-11 | 2022-09-11 | 達運精密工業股份有限公司 | 金屬遮罩及其製造方法 |
Citations (5)
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| JP2014201819A (ja) * | 2013-04-09 | 2014-10-27 | 株式会社ブイ・テクノロジー | 蒸着マスク及び蒸着マスクの製造方法 |
| JP2015120961A (ja) * | 2013-12-24 | 2015-07-02 | コニカミノルタ株式会社 | 成膜用マスク、マスク成膜方法、および有機エレクトロルミネッセンス素子の製造方法 |
| WO2016063810A1 (ja) * | 2014-10-23 | 2016-04-28 | シャープ株式会社 | 蒸着マスクの製造方法、蒸着マスク、蒸着装置、蒸着方法 |
| WO2017163443A1 (ja) * | 2016-03-23 | 2017-09-28 | 鴻海精密工業股▲ふん▼有限公司 | 蒸着マスク、蒸着マスクの製造方法および有機半導体素子の製造方法 |
| JP2018066053A (ja) * | 2016-10-21 | 2018-04-26 | 大日本印刷株式会社 | 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、及び有機elディスプレイの製造方法 |
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| US4916513A (en) * | 1965-09-28 | 1990-04-10 | Li Chou H | Dielectrically isolated integrated circuit structure |
| JPS5288072U (enExample) | 1975-12-25 | 1977-07-01 | ||
| US5453293A (en) * | 1991-07-17 | 1995-09-26 | Beane; Alan F. | Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects |
| SG115678A1 (en) * | 2003-04-22 | 2005-10-28 | Asml Netherlands Bv | Substrate carrier and method for making a substrate carrier |
| JP2010232163A (ja) * | 2009-03-03 | 2010-10-14 | Fujifilm Corp | 発光表示装置の製造方法、発光表示装置、及び発光ディスプレイ |
| US9108216B2 (en) * | 2012-01-12 | 2015-08-18 | Dai Nippon Printing Co., Ltd. | Vapor deposition mask, method for producing vapor deposition mask device and method for producing organic semiconductor element |
| TWI725466B (zh) * | 2013-03-26 | 2021-04-21 | 日商大日本印刷股份有限公司 | 蒸鍍遮罩、附框架的蒸鍍遮罩、蒸鍍遮罩之製造方法、蒸鍍遮罩準備體、圖案之形成方法、及有機半導體元件之製造方法 |
| WO2014167989A1 (ja) * | 2013-04-12 | 2014-10-16 | 大日本印刷株式会社 | 蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、及び有機半導体素子の製造方法 |
| JP6078818B2 (ja) * | 2013-07-02 | 2017-02-15 | 株式会社ブイ・テクノロジー | 成膜マスク及び成膜マスクの製造方法 |
| JP6168944B2 (ja) * | 2013-09-20 | 2017-07-26 | 株式会社ブイ・テクノロジー | 成膜マスク |
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-
2018
- 2018-04-19 JP JP2018080690A patent/JP6658790B2/ja active Active
-
2019
- 2019-03-20 US US17/042,297 patent/US20210013415A1/en not_active Abandoned
- 2019-03-20 WO PCT/JP2019/011768 patent/WO2019202902A1/ja not_active Ceased
- 2019-03-20 KR KR1020207026033A patent/KR102728020B1/ko active Active
- 2019-03-20 CN CN202210638781.1A patent/CN115110027B/zh active Active
- 2019-03-20 CN CN201980019365.XA patent/CN111886357B/zh active Active
- 2019-03-27 TW TW108110610A patent/TWI777055B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014201819A (ja) * | 2013-04-09 | 2014-10-27 | 株式会社ブイ・テクノロジー | 蒸着マスク及び蒸着マスクの製造方法 |
| JP2015120961A (ja) * | 2013-12-24 | 2015-07-02 | コニカミノルタ株式会社 | 成膜用マスク、マスク成膜方法、および有機エレクトロルミネッセンス素子の製造方法 |
| WO2016063810A1 (ja) * | 2014-10-23 | 2016-04-28 | シャープ株式会社 | 蒸着マスクの製造方法、蒸着マスク、蒸着装置、蒸着方法 |
| WO2017163443A1 (ja) * | 2016-03-23 | 2017-09-28 | 鴻海精密工業股▲ふん▼有限公司 | 蒸着マスク、蒸着マスクの製造方法および有機半導体素子の製造方法 |
| JP2018066053A (ja) * | 2016-10-21 | 2018-04-26 | 大日本印刷株式会社 | 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、及び有機elディスプレイの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102728020B1 (ko) | 2024-11-07 |
| CN111886357A (zh) | 2020-11-03 |
| KR20200144091A (ko) | 2020-12-28 |
| JP2019189888A (ja) | 2019-10-31 |
| TWI777055B (zh) | 2022-09-11 |
| CN111886357B (zh) | 2022-06-21 |
| CN115110027B (zh) | 2024-01-02 |
| US20210013415A1 (en) | 2021-01-14 |
| JP6658790B2 (ja) | 2020-03-04 |
| TW202003884A (zh) | 2020-01-16 |
| CN115110027A (zh) | 2022-09-27 |
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