CN115110027B - 一种蒸镀掩模及其制造方法 - Google Patents

一种蒸镀掩模及其制造方法 Download PDF

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Publication number
CN115110027B
CN115110027B CN202210638781.1A CN202210638781A CN115110027B CN 115110027 B CN115110027 B CN 115110027B CN 202210638781 A CN202210638781 A CN 202210638781A CN 115110027 B CN115110027 B CN 115110027B
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Prior art keywords
metal layer
resin
mask
vapor deposition
temperature
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Chinese (zh)
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CN115110027A (zh
Inventor
川崎博司
小幡胜也
曾根康子
广部吉纪
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN202210638781.1A 2018-04-19 2019-03-20 一种蒸镀掩模及其制造方法 Active CN115110027B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210638781.1A CN115110027B (zh) 2018-04-19 2019-03-20 一种蒸镀掩模及其制造方法

Applications Claiming Priority (5)

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JP2018080690A JP6658790B2 (ja) 2018-04-19 2018-04-19 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、有機elディスプレイの製造方法、及びパターンの形成方法
JP2018-080690 2018-04-19
CN202210638781.1A CN115110027B (zh) 2018-04-19 2019-03-20 一种蒸镀掩模及其制造方法
CN201980019365.XA CN111886357B (zh) 2018-04-19 2019-03-20 一种蒸镀掩模及其制造方法
PCT/JP2019/011768 WO2019202902A1 (ja) 2018-04-19 2019-03-20 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、有機elディスプレイの製造方法、及びパターンの形成方法

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CN115110027A CN115110027A (zh) 2022-09-27
CN115110027B true CN115110027B (zh) 2024-01-02

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JP (1) JP6658790B2 (enExample)
KR (1) KR102728020B1 (enExample)
CN (2) CN115110027B (enExample)
TW (1) TWI777055B (enExample)
WO (1) WO2019202902A1 (enExample)

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Publication number Priority date Publication date Assignee Title
CN111088474B (zh) * 2020-01-03 2022-07-05 京东方科技集团股份有限公司 一种掩膜板及其制作方法
KR20210091382A (ko) * 2020-01-13 2021-07-22 삼성디스플레이 주식회사 마스크, 이의 제조 방법, 및 표시 패널 제조 방법
KR102868771B1 (ko) * 2020-10-28 2025-10-13 삼성디스플레이 주식회사 마스크 프레임 및 이를 포함하는 증착 장치
TWD215838S (zh) 2021-05-07 2021-12-01 景美科技股份有限公司 框架之部分
TWI777614B (zh) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 金屬遮罩及其製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916513A (en) * 1965-09-28 1990-04-10 Li Chou H Dielectrically isolated integrated circuit structure
US5453293A (en) * 1991-07-17 1995-09-26 Beane; Alan F. Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects
JP2014201819A (ja) * 2013-04-09 2014-10-27 株式会社ブイ・テクノロジー 蒸着マスク及び蒸着マスクの製造方法
WO2015041296A1 (ja) * 2013-09-20 2015-03-26 株式会社ブイ・テクノロジー 成膜マスク及びタッチパネル基板
JP2015120961A (ja) * 2013-12-24 2015-07-02 コニカミノルタ株式会社 成膜用マスク、マスク成膜方法、および有機エレクトロルミネッセンス素子の製造方法
CN105023829A (zh) * 2014-04-25 2015-11-04 三星电子株式会社 生长氮化物单晶体的方法和制造氮化物半导体器件的方法
CN105358732A (zh) * 2013-07-02 2016-02-24 株式会社V技术 成膜掩模和成膜掩模的制造方法
JP2016069707A (ja) * 2014-09-30 2016-05-09 大日本印刷株式会社 蒸着マスク、蒸着マスク準備体、フレーム付き蒸着マスク、及び有機半導体素子の製造方法
CN106133054A (zh) * 2014-03-25 2016-11-16 松下知识产权经营株式会社 液状树脂组合物、固化物、配线结构体以及使用该配线结构体的组装体
CN106536784A (zh) * 2014-06-06 2017-03-22 大日本印刷株式会社 蒸镀掩模、带框架的蒸镀掩模、蒸镀掩模前体及有机半导体元件的制造方法
CN107075658A (zh) * 2014-10-23 2017-08-18 夏普株式会社 蒸镀掩模的制造方法、蒸镀掩模、蒸镀装置、蒸镀方法
WO2017163443A1 (ja) * 2016-03-23 2017-09-28 鴻海精密工業股▲ふん▼有限公司 蒸着マスク、蒸着マスクの製造方法および有機半導体素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5288072U (enExample) 1975-12-25 1977-07-01
SG115678A1 (en) * 2003-04-22 2005-10-28 Asml Netherlands Bv Substrate carrier and method for making a substrate carrier
JP2010232163A (ja) * 2009-03-03 2010-10-14 Fujifilm Corp 発光表示装置の製造方法、発光表示装置、及び発光ディスプレイ
US9108216B2 (en) * 2012-01-12 2015-08-18 Dai Nippon Printing Co., Ltd. Vapor deposition mask, method for producing vapor deposition mask device and method for producing organic semiconductor element
TWI725466B (zh) * 2013-03-26 2021-04-21 日商大日本印刷股份有限公司 蒸鍍遮罩、附框架的蒸鍍遮罩、蒸鍍遮罩之製造方法、蒸鍍遮罩準備體、圖案之形成方法、及有機半導體元件之製造方法
WO2014167989A1 (ja) * 2013-04-12 2014-10-16 大日本印刷株式会社 蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、及び有機半導体素子の製造方法
JP6511908B2 (ja) * 2014-03-31 2019-05-15 大日本印刷株式会社 蒸着マスクの引張方法、フレーム付き蒸着マスクの製造方法、有機半導体素子の製造方法、及び引張装置
KR102382753B1 (ko) * 2014-06-06 2022-04-08 다이니폰 인사츠 가부시키가이샤 증착 마스크, 프레임을 갖는 증착 마스크, 증착 마스크 준비체, 및 유기 반도체 소자의 제조 방법
CN110117767A (zh) * 2015-07-17 2019-08-13 凸版印刷株式会社 金属掩模用基材及其制造方法、蒸镀用金属掩模及其制造方法
CN109072411B (zh) * 2016-02-10 2021-04-06 鸿海精密工业股份有限公司 蒸镀掩模的制造方法、蒸镀掩模及有机半导体元件的制造方法
JP2018066053A (ja) * 2016-10-21 2018-04-26 大日本印刷株式会社 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、有機半導体素子の製造方法、及び有機elディスプレイの製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916513A (en) * 1965-09-28 1990-04-10 Li Chou H Dielectrically isolated integrated circuit structure
US5453293A (en) * 1991-07-17 1995-09-26 Beane; Alan F. Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects
JP2014201819A (ja) * 2013-04-09 2014-10-27 株式会社ブイ・テクノロジー 蒸着マスク及び蒸着マスクの製造方法
CN105358732A (zh) * 2013-07-02 2016-02-24 株式会社V技术 成膜掩模和成膜掩模的制造方法
WO2015041296A1 (ja) * 2013-09-20 2015-03-26 株式会社ブイ・テクノロジー 成膜マスク及びタッチパネル基板
JP2015120961A (ja) * 2013-12-24 2015-07-02 コニカミノルタ株式会社 成膜用マスク、マスク成膜方法、および有機エレクトロルミネッセンス素子の製造方法
CN106133054A (zh) * 2014-03-25 2016-11-16 松下知识产权经营株式会社 液状树脂组合物、固化物、配线结构体以及使用该配线结构体的组装体
CN105023829A (zh) * 2014-04-25 2015-11-04 三星电子株式会社 生长氮化物单晶体的方法和制造氮化物半导体器件的方法
CN106536784A (zh) * 2014-06-06 2017-03-22 大日本印刷株式会社 蒸镀掩模、带框架的蒸镀掩模、蒸镀掩模前体及有机半导体元件的制造方法
JP2016069707A (ja) * 2014-09-30 2016-05-09 大日本印刷株式会社 蒸着マスク、蒸着マスク準備体、フレーム付き蒸着マスク、及び有機半導体素子の製造方法
CN107075658A (zh) * 2014-10-23 2017-08-18 夏普株式会社 蒸镀掩模的制造方法、蒸镀掩模、蒸镀装置、蒸镀方法
WO2017163443A1 (ja) * 2016-03-23 2017-09-28 鴻海精密工業股▲ふん▼有限公司 蒸着マスク、蒸着マスクの製造方法および有機半導体素子の製造方法

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KR102728020B1 (ko) 2024-11-07
CN111886357A (zh) 2020-11-03
KR20200144091A (ko) 2020-12-28
WO2019202902A1 (ja) 2019-10-24
JP2019189888A (ja) 2019-10-31
TWI777055B (zh) 2022-09-11
CN111886357B (zh) 2022-06-21
US20210013415A1 (en) 2021-01-14
JP6658790B2 (ja) 2020-03-04
TW202003884A (zh) 2020-01-16
CN115110027A (zh) 2022-09-27

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