WO2015041296A1 - 成膜マスク及びタッチパネル基板 - Google Patents
成膜マスク及びタッチパネル基板 Download PDFInfo
- Publication number
- WO2015041296A1 WO2015041296A1 PCT/JP2014/074708 JP2014074708W WO2015041296A1 WO 2015041296 A1 WO2015041296 A1 WO 2015041296A1 JP 2014074708 W JP2014074708 W JP 2014074708W WO 2015041296 A1 WO2015041296 A1 WO 2015041296A1
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- Prior art keywords
- mask
- film
- resin
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- frame
- Prior art date
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Definitions
- the present invention relates to a film formation mask for forming a thin film pattern on a substrate, and in particular, suppresses deformation of the mask due to a difference in linear expansion coefficient between the mask material and the thin film material, thereby improving the position accuracy of the thin film pattern.
- the present invention relates to a film forming mask and a touch panel substrate that can be used.
- the conventional film-forming mask uses a film-forming mask that uses a flexible adhesive film made of a flexible film made of a flexible film that covers a portion that should be a non-deposition area and adheres closely to the substrate surface.
- a film forming process in which the adhesive film is adhered to the entire surface of the base material on the film forming side, and then the flexible adhesive film covering a region where a desired deposited layer is to be formed is selectively removed and then the deposited layer is formed. Finally, the flexible adhesive film left on the substrate surface was removed (see, for example, Patent Document 1).
- the mask material is a flexible resin film such as polyimide
- a line between the film and a thin film material deposited on the film, for example, a transparent conductive film is used.
- deformation of the film such as wrinkles and warpage occurred due to the difference in the expansion coefficient, and the position accuracy of the thin film pattern to be formed deteriorated.
- An object of the present invention is to provide a touch panel substrate.
- a film-forming mask according to a first invention comprises a resin mask in which an opening pattern is formed corresponding to a thin film pattern formed on a substrate, and a through-hole having a size including the opening pattern. And a metal mask of a magnetic metal member installed on one surface side of the resin mask with a gap formed between the resin mask and a hole.
- the touch panel substrate according to the second invention is formed by sputtering film formation using the film formation mask, and an electrode of a transparent conductive film is formed on a transparent glass substrate.
- the metal mask since the predetermined gap is provided between the resin mask and the metal mask, at the time of film formation, the metal mask is attracted by the magnet disposed on the back surface of the substrate and the resin mask is brought into close contact with the substrate surface.
- the metal mask after the film formation is completed, when the attracting action of the metal mask by the magnet is released, the metal mask can be separated from the resin mask by its elastic restoring force. Therefore, the thin film deposited on the resin mask is divided, and internal stress caused by the difference in linear expansion coefficient between the resin mask material and the thin film material is also divided, so that deformation of the resin mask can be suppressed. Therefore, the positional accuracy of the thin film pattern formed on the substrate can be improved.
- FIG. 1 is a center line sectional view showing an embodiment of a film forming mask according to the present invention.
- the film formation mask 1 is used to form a thin film pattern on a substrate, and includes a first mask 2 and a second mask 3.
- the first mask 2 is formed on the substrate through the opening pattern 4 to form a thin film pattern, and serves as a main mask. As shown in FIG. It is configured to include a manufactured film (hereinafter referred to as “resin mask 5”), a metal thin film 6, and a first frame 7.
- resin mask 5 a manufactured film
- metal thin film 6 a metal thin film 6 a first frame 7.
- the resin mask 5 is formed by forming a plurality of through-opening patterns 4 having the same shape and dimensions as the thin film pattern corresponding to the plurality of thin film patterns formed on the substrate. It is a resin film that transmits visible light, such as polyimide of about 30 ⁇ m or polyethylene terephthalate (PET).
- PET polyethylene terephthalate
- polyimide having a linear expansion coefficient of approximately 3 ⁇ 10 ⁇ 6 to 5 ⁇ 10 ⁇ 6 / ° C., which approximates the linear expansion coefficient of glass as a film formation substrate will be described.
- the opening pattern 4 is obtained by applying a laser beam shaped into the shape of the opening pattern 4 to be formed in a state where a polyimide film is stretched and fixed on a first frame 7 described later. It is formed by irradiating a polyimide film from one side.
- the reference is observed through transparent polyimide by placing the film on a transparent glass substrate on which a plurality of reference marks are formed corresponding to the formation positions of the plurality of opening patterns 4 to be formed.
- a plurality of opening patterns 4 may be formed on the film by irradiating the mark with the laser beam.
- a plurality of opening patterns 4 may be formed in the plane of the film while stepping the laser beam at a predetermined pitch.
- a metal thin film 6 composed of a plurality of isolated patterns is formed along the peripheral portion of the resin mask 5 in an outer region of the effective region where the plurality of opening patterns 4 are formed. Is provided.
- This metal thin film 6 is spot-welded to one end face 7a of a first frame 7 described later, and fixes the resin mask 5 to the first frame 7.
- a metal film such as nickel is about 30 ⁇ m. The thickness is plated. Alternatively, it may be formed by sputtering or vapor deposition using a dedicated metal mask. After a metal thin film is formed on the entire surface 5a of the resin mask 5, a pattern of a plurality of metal thin films 6 isolated by etching is formed. It may be formed.
- a first frame 7 is provided on the one surface 5 a side of the resin mask 5.
- the first frame 7 supports the resin mask 5 in a state where the resin mask 5 is stretched, and a portion of the metal thin film 6 of the resin mask 5 is spot-welded to one end surface 7a.
- the first frame 7 has an opening 8 having a size that encloses the plurality of opening patterns 4 of the resin mask 5, and has a frame shape whose outer shape is substantially equal to the outer shape of the resin mask 5.
- it is a magnetic metal member such as Invar or Invar alloy having a thickness of about 30 mm to 50 mm.
- reference numeral 10 denotes a screw hole for fixing the first mask 2 to the second mask 3.
- the second mask 3 is provided on the first surface 5a side of the first mask 2 with a predetermined gap 9 between the first mask 2 and the resin mask 5 in advance.
- the second mask 3 is for preventing the resin mask 5 from being deformed due to the difference in the linear expansion coefficient between the resin mask 5 and the thin film material due to the thin film material deposited on the resin mask 5.
- it is a sub mask, and comprises a metal mask 11 and a second frame 12 as shown in FIG.
- the metal mask 11 is a magnetic metal member having, for example, a thickness of about 30 ⁇ m to 50 ⁇ m, in which a through hole 13 having a size including at least one opening pattern 4 is formed.
- the outer shape of the metal mask 11 is the first frame 7.
- the resin mask 5 is provided with the gap 9 provided in the opening 8.
- the gap 9 attracts the metal mask 11 to adhere to the resin mask 5, and when the magnetic force of the magnet is removed, the metal mask 11 is removed. It is desirable to set the size so that it can be separated from the resin mask 5 by an elastic restoring force, for example, about 300 ⁇ m.
- the through-hole 13 may have a size including a plurality of opening patterns 4, but the deposition area of the thin film material on the resin mask 5 is reduced to reduce the mask material and the thin film material. In order to suppress the deformation of the resin mask 5 caused by the difference in linear expansion coefficient, it is more desirable that the through hole 13 has a size including one opening pattern 4.
- the through hole 13 may be formed by wet etching a sheet of magnetic metal member using a resist mask 14 as shown in FIG.
- the magnetic metal member is isotropically etched in the wet etching, if the etching is performed only from one surface side as shown in FIG. 14 is formed so as to become narrower from the formation surface side toward the other surface side.
- FIG. 4B when the magnetic metal member is etched from both sides, the through hole 13 is formed so that the opening area on both sides is wider than the inside. Therefore, in order to prevent the thin film material from adhering to the side wall of the through hole 13 during film formation and to easily separate the metal mask 11 from the resin mask 5 after film formation, the metal mask 11 is shown in FIG.
- the surface side of the through hole 13 having a large opening area may be opposed to the resin mask 5.
- the side of the through hole 13 having a small opening area is the resin mask 5 side in order to prevent the edge of the through hole 13 from being a shadow of film formation.
- the through hole since sputtered particles wrap around more than vapor deposition, as shown in FIG. 3 (c), even if the surface side with a large opening area of the through hole 13 is the resin mask 5 side, the through hole The influence of 13 edges on film formation is small.
- a second frame 12 On the opposite side of the metal mask 11 from the resin mask 5 side, a second frame 12 is provided.
- the second frame 12 supports the metal mask 11 in a state where the metal mask 11 is stretched. As shown in FIG. 2B, the peripheral portion of the metal mask 11 is spot-welded to one end surface 12a.
- the second frame 12 has an opening 15 having a size that encloses the plurality of through-holes 13 of the metal mask 11, and has a frame shape whose size can be accommodated in the opening 8 of the first frame 7.
- a magnetic metal member such as Invar or Invar alloy having a thickness of about 30 mm to 50 mm.
- a flange 16 is provided on the other end surface 12 b side of the second frame 12 so as to protrude to the opposite side to the opening 15 side.
- the other end surface 7 b of the first frame 7 is screwed to the collar 16. (Refer to FIG. 1).
- each thickness of the first frame 7, the second frame 12, and the collar 16 is such that the gap 9 is generated in a state where the first frame 7 is fixed to the collar 16 of the second frame 12. Is determined.
- reference numeral 18 denotes a hole through which the screw 17 is passed.
- the film formation mask 1 is prepared by fixing and assembling the first frame 7 of the first mask 2 and the second frame 12 of the second mask 3 with the screws 17.
- the deposition mask 1 is attached to the mask holder 20 provided in the vacuum chamber 19 of the sputtering apparatus so that the first mask 2 is on the deposition target substrate (hereinafter simply referred to as “substrate 22”) side.
- a cylindrical indium tin oxide (hereinafter referred to as “ITO”) as a film forming material is provided on the target holder 23 configured to be reciprocally movable in the directions of arrows A and B parallel to the surface of the substrate 22 installed in the substrate holder 21.
- ITO indium ⁇ ⁇ ⁇ Tin Oxide
- 24 is attached with its cylinder axis intersecting the moving direction.
- the exhaust valve 26 is opened with the gas introduction valve 25 closed, and the air in the vacuum chamber 19 is exhausted and evacuated until a predetermined degree of vacuum is reached. .
- the front chamber (not shown) is partitioned by the gate valve 27 and maintained at substantially the same degree of vacuum (in FIG. 4, adjacent to the vacuum chamber 19 on the back side).
- the substrate 22 made of transparent glass is transported by a substrate loading mechanism (not shown) and placed on the substrate holder 21. Thereafter, the substrate loading mechanism is retracted to the front chamber, and the gate valve 27 is closed.
- the mask holder 20 moves in the direction of arrow C in FIG. 4 to place the deposition mask 1 on the substrate 22.
- the resin mask 5 of the first mask 2 is placed on the film formation surface of the substrate 22.
- a predetermined gap 9 is maintained between the resin mask 5 and the metal mask 11.
- the magnetic force of the magnet 28 built in the substrate holder 21 is applied to attract the metal mask 11 of the second mask 3, and the metal mask 11 is elastically bent.
- the resin mask 5 is pressed, and the resin mask 5 is brought into close contact with the film forming surface of the substrate 22 and fixed.
- the metal mask 11 adheres to the surface of the resin mask 5.
- the gas introduction valve 25 is opened and the exhaust valve 26 is adjusted so that an inert gas such as argon (Ar) gas is introduced into the vacuum chamber 19 until a predetermined value is reached.
- an inert gas such as argon (Ar) gas
- a high voltage is applied to the target holder 23 and a plasma 29 is generated between the target 24 and the substrate 22 as shown in FIG.
- sputtering is performed by reciprocating in the directions of arrows A and B shown in FIG.
- a shutter (not shown) is inserted between the target 24 and the substrate 22 for a certain time (pre-sputtering time) before the main sputtering is started, and the sputtered particles adhere to the substrate 22. Is blocking.
- the shutter is closed and the sputtering is finished. Then, the application of the high voltage to the target holder 23 is released, and the generation of the plasma 29 is stopped as shown in FIG.
- the ITO conductive film 30 includes the surface of the substrate 22 in the opening pattern 4, the sidewall of the opening pattern 4, the peripheral edge of the opening pattern 4 of the resin mask 5, and the sidewall of the through hole 13. And deposited on the surface of the metal mask 11 on the target 24 side.
- the mask holder 20 is moved in the direction of arrow D shown in FIG. 4 to separate the deposition mask 1 from the substrate 22 and the inert gas in the vacuum chamber 19 is exhausted. Then, the gate valve 27 for partitioning the vacuum chamber 19 and the front chamber is opened, and the touch panel substrate 32 is carried out from the vacuum chamber 19 to the front chamber by the substrate loading mechanism. The substrate 22 is carried in and installed in the substrate holder 21.
- the present invention is not limited to this, and the first mask 2 includes only the resin mask 5.
- the second mask 3 may be only the metal mask 11.
- a metal spacer may be provided between the resin mask 5 and the metal mask 11 so that a gap 9 is formed between them.
- the film forming apparatus is a sputtering apparatus.
- the present invention is not limited to this, and the film forming apparatus may be a vapor deposition apparatus.
- the thin film is the ITO conductive film 30
- the present invention is not limited to this, and the thin film may be any of an organic material thin film, an inorganic material thin film, or a metal thin film. Good.
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Abstract
Description
先ず、第1のマスク2の第1のフレーム7と第2のマスク3の第2のフレーム12とをねじ17で固定して組み立てて成膜マスク1が準備される。
2…第1のマスク
3…第2のマスク
4…開口パターン
5…樹脂マスク
7…第1のフレーム
9…隙間
11…メタルマスク
12…第2のフレーム
13…貫通孔
22…基板
28…磁石
30…透明導電膜
31…電極
32…タッチパネル基板
Claims (10)
- 基板上に成膜される薄膜パターンに対応して開口パターンを形成した樹脂マスクと、
前記開口パターンを内包する大きさの貫通孔を形成し、前記樹脂マスクとの間に隙間を設けて前記樹脂マスクの一面側に設置される磁性金属部材のメタルマスクと、
を備えて構成された成膜マスク。 - 前記樹脂マスクと前記メタルマスクとの間の前記隙間は、前記基板の裏面に設置される磁石の磁力が前記メタルマスクに作用すると前記メタルマスクを吸引して前記樹脂マスクに密着させ、前記磁石の磁力の作用が取り去られると前記メタルマスクをその弾性復元力により前記樹脂マスクから離隔させ得る大きさに設定されていることを特徴とする請求項1記載の成膜マスク。
- 前記メタルマスクの前記貫通孔は、少なくとも前記樹脂マスク側の開口面積が貫通孔内部の開口面積よりも広いことを特徴とする請求項1又は2記載の成膜マスク。
- 前記樹脂マスクは、その周縁部が第1のフレームに固定され、前記メタルマスクは、その周縁部が第2のフレームに固定されており、
前記樹脂マスクと前記メタルマスクとの間に前記所定の隙間が生じるようにして、前記第1のフレームと前記第2のフレームとを着脱自在に固定したことを特徴とする請求項1又は2記載の成膜マスク。 - 前記樹脂マスクは、その周縁部が第1のフレームに固定され、前記メタルマスクは、その周縁部が第2のフレームに固定されており、
前記樹脂マスクと前記メタルマスクとの間に前記所定の隙間が生じるようにして、前記第1のフレームと前記第2のフレームとを着脱自在に固定したことを特徴とする請求項3記載の成膜マスク。 - 前記薄膜パターンは、スパッタリング成膜される透明導電膜であることを特徴とする請求項1又は2記載の成膜マスク。
- 前記薄膜パターンは、スパッタリング成膜される透明導電膜であることを特徴とする請求項3記載の成膜マスク。
- 前記薄膜パターンは、スパッタリング成膜される透明導電膜であることを特徴とする請求項4記載の成膜マスク。
- 前記薄膜パターンは、スパッタリング成膜される透明導電膜であることを特徴とする請求項5記載の成膜マスク。
- 請求項1記載の成膜マスクを使用してスパッタリング成膜し、透明なガラス基板上に透明導電膜の電極を形成したタッチパネル基板。
Priority Applications (2)
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CN201480051077.XA CN105555991B (zh) | 2013-09-20 | 2014-09-18 | 成膜掩模以及触摸面板基板 |
KR1020167004934A KR20160058091A (ko) | 2013-09-20 | 2014-09-18 | 성막 마스크 및 터치 패널 기판 |
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JP2013-195552 | 2013-09-20 | ||
JP2013195552A JP6168944B2 (ja) | 2013-09-20 | 2013-09-20 | 成膜マスク |
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PCT/JP2014/074708 WO2015041296A1 (ja) | 2013-09-20 | 2014-09-18 | 成膜マスク及びタッチパネル基板 |
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JP (1) | JP6168944B2 (ja) |
KR (1) | KR20160058091A (ja) |
CN (1) | CN105555991B (ja) |
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CN108779553A (zh) * | 2016-03-23 | 2018-11-09 | 鸿海精密工业股份有限公司 | 蒸镀掩膜、蒸镀掩膜的制造方法及有机半导体元件的制造方法 |
CN112359317A (zh) * | 2020-10-27 | 2021-02-12 | 京东方科技集团股份有限公司 | 掩膜板及显示面板的制备方法 |
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JP6949507B2 (ja) * | 2016-08-05 | 2021-10-13 | 日鉄ケミカル&マテリアル株式会社 | 蒸着マスク及びその製造方法並びに蒸着マスク用積層体及びその製造方法 |
WO2018062300A1 (ja) * | 2016-09-30 | 2018-04-05 | 大日本印刷株式会社 | 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、蒸着パターン形成方法、有機半導体素子の製造方法、有機elディスプレイの製造方法 |
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KR20220021994A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 마스크, 마스크의 제조방법, 및 표시 패널의 제조방법 |
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Also Published As
Publication number | Publication date |
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JP6168944B2 (ja) | 2017-07-26 |
CN105555991A (zh) | 2016-05-04 |
CN105555991B (zh) | 2018-03-20 |
TW201525163A (zh) | 2015-07-01 |
JP2015059262A (ja) | 2015-03-30 |
KR20160058091A (ko) | 2016-05-24 |
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