WO2019082662A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat

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Publication number
WO2019082662A1
WO2019082662A1 PCT/JP2018/037812 JP2018037812W WO2019082662A1 WO 2019082662 A1 WO2019082662 A1 WO 2019082662A1 JP 2018037812 W JP2018037812 W JP 2018037812W WO 2019082662 A1 WO2019082662 A1 WO 2019082662A1
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WO
WIPO (PCT)
Prior art keywords
processing
concentration
predetermined
substrate
pure water
Prior art date
Application number
PCT/JP2018/037812
Other languages
English (en)
Japanese (ja)
Inventor
真治 杉岡
隆一 木村
靖 久保
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN201880068938.3A priority Critical patent/CN111263975B/zh
Priority to KR1020207012440A priority patent/KR102323310B1/ko
Publication of WO2019082662A1 publication Critical patent/WO2019082662A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method in which a substrate such as a semiconductor wafer is immersed in a processing solution stored in a processing tank to perform etching processing and cleaning processing.
  • the process of manufacturing a semiconductor device includes a step of subjecting a substrate such as a semiconductor wafer or the like to an etching process or a cleaning process by immersing the substrate in a processing bath. Such a process is performed by a substrate processing apparatus including a plurality of processing baths.
  • concentration of the processing liquid in each processing tank of the substrate processing apparatus may change due to evaporation, decomposition, and the like of the processing liquid components with the passage of time. Therefore, concentration control is performed to maintain the concentration of the processing solution within the range suitable for the above-mentioned etching and cleaning.
  • the substrate processing apparatus further performs processing for replacing the processing liquid in the processing tank when the lifetime of the processing liquid has elapsed.
  • the lifetime of the treatment liquid is a use time determined that the treatment itself will not be sufficiently performed if the state of the treatment liquid changes and continues to be used, and is determined in advance by experiments and the like.
  • the concentration of the processing solution is from the range appropriate for the etching processing and the cleaning processing before the start of processing on the substrate. There is a possibility of deviation. Therefore, even if the lifetime has elapsed, technology for carrying out the replacement of the processing liquid until the start of the processing on the substrate is performed without performing the processing liquid replacement immediately.
  • the concentration of the processing liquid in the processing tank changes during the postponement, and the processing liquid with the changed concentration flows into the piping of the substrate processing apparatus Do.
  • the treatment liquid that has flowed into the piping or the like may remain even when the treatment liquid in the treatment tank is replaced, and the residual treatment liquid may affect the concentration of the treatment liquid in the treatment tank.
  • high etching accuracy is required in predetermined processing of a substrate, particularly in etching processing. There is a need for a technique for controlling the concentration with higher accuracy.
  • a technology that can suppress fluctuations in the concentration of the processing liquid in the processing tank after processing liquid replacement. Intended to provide.
  • the present substrate processing apparatus performs predetermined processing on the substrate by immersing the substrate in a processing solution containing one or more chemical solutions and pure water.
  • the substrate processing apparatus includes a processing tank in which a processing liquid for performing a predetermined processing on a substrate is stored, a processing liquid exchange unit that exchanges the processing liquid when the lifetime of the processing liquid in the processing tank has elapsed, and a processing liquid Detection unit for detecting the concentration of pure water or other predetermined components in the above, a concentration control unit for controlling the concentration within a concentration range suitable for predetermined processing until the lifetime elapses, and a treatment liquid exchange unit And a deferment unit for deferring the replacement of the treatment solution until the start of a predetermined treatment. Furthermore, the concentration control unit controls the concentration within the concentration range suitable for the predetermined processing even while the replacement of the processing liquid is postponed by the postponement unit.
  • the replacement of the processing liquid is postponed until the predetermined processing start time. Furthermore, since the concentration control unit maintains the concentration of the processing liquid while the replacement of the processing liquid is postponed, it is possible to suppress the flow of the processing liquid whose concentration has changed into the piping or the like of the substrate processing apparatus. Therefore, the influence on the concentration of the treatment liquid in the treatment tank after replacement by the treatment liquid remaining in the pipe or the like is suppressed. As a result, the fluctuation of the concentration of the treatment liquid in the treatment tank after replacement of the treatment liquid is suppressed.
  • the lifetime of the treatment liquid is a use time determined that the treatment itself will not be sufficiently performed if the state of the treatment liquid changes and the treatment liquid continues to be used.
  • lifetime has passed may be when the lifetime has passed, or may be slightly before or after the lifetime has passed.
  • the predetermined process is, for example, an etching process performed on the substrate by immersing the substrate in the processing solution in the processing tank, and is performed, for example, by batch control.
  • the concentration control unit may control the temperature of the treatment liquid within a temperature range suitable for a predetermined treatment. According to this, the temperature of the processing solution is maintained while the replacement of the processing solution is postponed. Therefore, it is suppressed that the process liquid which temperature changed flowed in piping etc. of a substrate processing apparatus.
  • the treatment liquid is a mixed acid aqueous solution containing at least one of phosphoric acid, nitric acid, and acetic acid and pure water
  • the concentration control unit supplies the pure water to the mixed acid aqueous solution to mix the mixed acid aqueous solution.
  • the concentration of pure water may be controlled within a concentration range suitable for a predetermined treatment. According to this, it is possible to control the concentration of pure water to an appropriate value according to the processing by a simple operation of changing the supply amount and the supply timing of pure water.
  • the supply of pure water by the concentration control unit is characterized by controlling the concentration in a concentration range suitable for a predetermined treatment by supplying a predetermined amount of pure water to the treatment tank at a predetermined interval.
  • the predetermined amount is an amount that does not significantly change the concentration of pure water in the treatment liquid in the treatment tank. According to this, since the amount of pure water to be supplied at one time is defined, it is suppressed that the concentration of pure water becomes higher than the allowable range.
  • the concentration control unit is characterized in that the treatment liquid is replenished to the treatment tank when the level of the liquid surface of the treatment liquid in the treatment tank is less than the height suitable for the predetermined treatment. It may be According to this, the height of the liquid surface of the processing liquid in the processing tank can be maintained at a height suitable for the predetermined processing, so that the concentration control of the processing liquid becomes easy.
  • the technology when the concentration of the processing liquid detected by the detection unit deviates from the concentration range suitable for the predetermined processing, the technology further includes a suppression unit that suppresses the start of the predetermined processing, and the suppression unit It may be characterized in that the suppression process is not performed while the deferral unit defers the replacement of the treatment liquid. According to this, when the replacement of the processing liquid is not postponed by the postponement part, the low quality etching processing by the processing liquid deviating from the concentration suitable for the predetermined processing is suppressed. Moreover, when the replacement of the treatment liquid is postponed by the postponement unit, the treatment liquid can be replaced at the start of the predetermined treatment by not executing the suppressing process.
  • the means for solving the problems disclosed above can also be grasped from the aspect of the substrate processing method. Further, the means for solving the problems disclosed above can be used in appropriate combination.
  • the present substrate processing apparatus can suppress fluctuations in the concentration of the processing liquid in the processing tank after the processing liquid is replaced, in the substrate processing apparatus which postpones the exchange of the processing liquid until the processing start to the substrate.
  • FIG. 4 is a diagram showing an example of the timing of the entire solution exchange of the mixed acid aqueous solution in the treatment tank.
  • FIG. 5 is a diagram showing an example of concentration control of the mixed acid aqueous solution in the embodiment.
  • FIG. 6 is a diagram showing an example of replenishment of pure water performed in the concentration control of the embodiment.
  • FIG. 7 is a view showing an example of replenishment of mixed acid carried out in concentration control of the embodiment.
  • FIG. 8 is a diagram illustrating a flow of processing for suppressing execution of a batch when the concentration of the mixed acid aqueous solution is out of the specified concentration range in the substrate processing apparatus operated in the normal mode.
  • FIG. 9 is a diagram illustrating a flow of processing for suppressing execution of a batch when the concentration of the mixed acid aqueous solution is out of the specified concentration range in the substrate processing apparatus operated in the saving mode.
  • FIG. 10 is a diagram illustrating a flow of processing that does not suppress batch execution when the concentration of the mixed acid aqueous solution is out of the specified concentration range in the substrate processing apparatus operated in the saving mode.
  • FIG. 1 is a perspective view showing an example of a schematic configuration of a substrate processing apparatus 1 according to an embodiment.
  • the substrate processing apparatus 1 mainly performs etching processing and cleaning processing (hereinafter, also simply referred to as “processing”) on the substrate W.
  • the buffer unit 2 for stocking the substrate W is disposed on the right back side in FIG. 1, and further to the right back side of the buffer unit 2, a front panel for operating the substrate processing apparatus 1 Not shown).
  • a substrate loading / unloading port 3 is provided on the side opposite to the front panel in the buffer unit 2. Further, processing units 5, 7 and 9 for processing the substrate W are arranged in parallel from the opposite side (the front left side in FIG. 1) of the buffer unit 2 in the longitudinal direction of the substrate processing apparatus 1.
  • Each processing unit 5, 7 and 9 has two processing tanks 5a and 5b, 7a and 7b, 9a and 9b, respectively.
  • a sub-transfer for moving the plurality of substrates W only between the processing tanks in the processing units 5, 7 and 9 in the direction and the range of the short arrow in FIG. A mechanism 43 is provided. Further, the sub transport mechanism 43 immerses the plurality of substrates W in the processing tanks 5a and 5b, 7a and 7b, 9a and 9b, or pulls the plurality of substrates W up and down from these processing tanks. Move it.
  • Each sub transport mechanism 43 is provided with lifters 11, 13 and 15 for holding a plurality of substrates W.
  • the substrate processing apparatus 1 is provided with a main transport mechanism 17 movable in the direction and range of long arrows in FIG. 1 in order to transport a plurality of substrates W to each of the processing units 5, 7 and 9. It is done.
  • the main transport mechanism 17 has two movable arms 17a.
  • the arms 17a are provided with a plurality of grooves (not shown) for placing the substrate W, and in the state shown in FIG. Hold at a position along the direction). Further, the two arms 17a in the main transport mechanism 17 swing from "V" to reverse “V” when viewed from the lower right in FIG. Open By this operation, the substrate W can be transferred between the main transport mechanism 17 and the lifters 11, 13 and 15.
  • a series of flows in which a plurality of substrates W are taken out from the buffer unit 2 and the taken-out substrates W are processed by the processing units 5, 7 and 9 is also referred to as a batch.
  • the substrate processing apparatus 1 executes processing on the substrate W stocked in the buffer unit 2 by repeatedly executing the batch.
  • FIG. 2 shows an example of a functional block diagram of the substrate processing apparatus 1.
  • the main conveyance mechanism 17, the sub conveyance mechanism 43, and the processing units 5, 7, and 9 described above are totally controlled by the control unit 55.
  • the configuration of the control unit 55 as hardware is the same as that of a general computer. That is, the control unit 55 stores a CPU that performs various arithmetic processing, a ROM that is a read only memory that stores a basic program, a RAM that is a readable and writable memory that stores various information, a control application, data, and the like. A magnetic disk etc. are provided.
  • the CPU of the control unit 55 executes a predetermined program
  • the substrate W is transported to each of the processing units 5, 7 and 9, and each unit is controlled to perform processing according to the program.
  • the above program is stored in the storage unit 57.
  • FIG. 3 is a view showing an example of a configuration related to control of the processing liquid of each processing tank 5a, 7a, 9a in the processing units 5, 7, 9 of the substrate processing apparatus 1.
  • the processing tank 7a among the processing tanks 5a, 7a, 9a in the processing units 5, 7, 9, the processing tank 7a will be described as an example.
  • the control similar to or similar to the control of the processing liquid in the processing tank 7a described below is also applied to the other processing tanks 5a and 9a.
  • a single crystal ingot such as silicon is sliced in the rod axis direction, and the obtained product is sequentially subjected to processing such as chamfering, lapping, etching, polishing and the like. .
  • processing such as chamfering, lapping, etching, polishing and the like.
  • multiple layers, structures and circuits of different materials are formed on the substrate surface.
  • the etching process of the substrate W performed in the processing tank 7a is performed, for example, for the purpose of removing metal such as tungsten remaining on the substrate W, and the mixed acid (phosphoric acid, nitric acid, acetic acid, It is carried out by immersing for a predetermined time in an aqueous solution or the like.
  • the above-described etching process is an example of the “predetermined process”.
  • phosphoric acid, nitric acid and acetic acid in the mixed acid are examples of the “other predetermined components”.
  • the processing tank 7a has a double tank structure constituted by an inner tank 50a for immersing the substrate W in the mixed acid aqueous solution and an outer tank 50b for recovering the mixed acid aqueous solution overflowing from the upper part of the inner tank 50a.
  • the inner tank 50a is a box-shaped member having a rectangular shape in a plan view and made of quartz or a fluorine resin material excellent in corrosion resistance to a mixed acid aqueous solution.
  • the outer tank 50b is formed of the same material as the inner tank 50a, and is provided to surround the upper end of the outer periphery of the inner tank 50a.
  • the lifter 13 for immersing the substrate W in the stored mixed acid aqueous solution is provided in the processing tank 7a.
  • the lifter 13 collectively holds a plurality of (for example, 50) substrates W arrayed in parallel with each other in a standing posture by three holding rods.
  • the lifter 13 is provided movably in the upper, lower, left, and right directions by the sub conveyance mechanism 43, and is disposed at a processing position (the position shown in FIG. 3) for immersing the plurality of substrates W to be held While moving up and down between the mixed acid aqueous solution and the delivery position, it is possible to move it to the adjacent processing tank 7b.
  • the substrate processing apparatus 1 further includes a circulation line 20 for circulating the mixed acid aqueous solution to the processing tank 7a.
  • the circulation line 20 is a piping path for filtering and heating the mixed acid aqueous solution discharged from the treatment tank 7a and pumping back to the treatment tank 7a again.
  • the outer tank 50b and the inner tank 50a of the treatment tank 7a are It is configured to connect the flow path.
  • the drainage switching valve 26 and the drainage valve 27 should be opened and closed.
  • the mixed acid aqueous solution discharged from the outer tank 50b is discarded as it is through the drainage line 30.
  • the circulation pump 21, the temperature regulator 22, the filter 23, and the concentration meter 24 as a detection unit are provided from the upstream side.
  • the circulation pump 21 sucks the mixed acid aqueous solution from the outer tank 50b via the circulation line 20 and pumps the mixed acid aqueous solution toward the inner tank 50a.
  • the temperature controller 22 reheats the mixed acid aqueous solution flowing in the circulation line 20 to a predetermined processing temperature.
  • a heater (not shown) is also provided in the processing tank 7a, and the mixed acid aqueous solution stored in the processing tank 7a is also heated so as to maintain a predetermined processing temperature.
  • the filter 23 is a filtration filter for removing foreign matter in the mixed acid aqueous solution flowing through the circulation line 20.
  • the densitometer 24 measures the concentration of pure water among the components of the mixed acid aqueous solution collected in the inner tank 50 a by the circulation line 20.
  • the mixed acid concentration in the processing tank 7a is controlled so that the pure water concentration measured by the densitometer 24 becomes an optimum value.
  • the densitometer 24 is an example of the “detection unit”, and the process in which the concentration of pure water is measured by the densitometer 24 is an example of the “detection step”.
  • the control unit 55 performs processing for controlling the mixed acid concentration in the processing tank 7a.
  • control unit 55 controls the total liquid exchange of the mixed acid aqueous solution in the treatment tank 7a, feedback control of the concentration of the mixed acid aqueous solution, and pure water when the mixed acid aqueous solution in the treatment tank 7a decreases due to evaporation or the like. Or perform processing related to replenishment of mixed acid aqueous solution.
  • the control part 55 which performs whole liquid exchange control is an example of a "process liquid exchange part", and the process is an example of a "process liquid exchange process.”
  • the circulation pump 21 regardless of whether the substrate W is immersed in the mixed acid aqueous solution stored in the processing tank 7a, the circulation pump 21 always pumps the mixed acid aqueous solution at a constant flow rate.
  • the mixed acid aqueous solution returned to the treatment tank 7a by the circulation line 20 is supplied from the bottom of the inner tank 50a. This causes an upflow of the mixed acid aqueous solution from the bottom to the upper side in the inner tank 50a.
  • the mixed acid aqueous solution supplied from the bottom overflows from the upper end of the inner tank 50a and flows into the outer tank 50b.
  • the mixed acid aqueous solution that has flowed into the outer tank 50b is sent from the outer tank 50b to the circulation pump 21 through the circulation line 20, and is continuously fed back to the treatment tank 7a to continue the circulation process.
  • the lifters 13 While performing the circulation process of the mixed acid aqueous solution by the circulation line 20, the lifters 13 having received the plurality of substrates W at the delivery position are lowered to the processing position and the substrate in the mixed acid aqueous solution stored in the inner tank 50a. Immerse W. Thereby, processing for a predetermined time is performed, and after the processing is completed, the lifter 13 ascends to the delivery position again and pulls the substrate W out of the mixed acid aqueous solution. Thereafter, the lifter 13 horizontally moves and descends to immerse the substrate W in the adjacent processing tank 7b, and the water washing process is performed.
  • the substrate processing apparatus 1 is provided with a concentration control device 40 for controlling the concentration of the mixed acid aqueous solution in the processing tank 7a.
  • the concentration controller 40 includes a chemical solution supply source 41, a chemical solution line 42 connecting the chemical solution supply source 41 and the treatment tank 7a, a pure water supply source 46, a pure water connecting the pure water supply source 46 and the treatment tank 7a. And a line 47.
  • the chemical solution supply source 41 is independently provided with a supply source for supplying each of phosphoric acid, nitric acid, and acetic acid constituting the mixed acid, and the chemical solution line 42 contains phosphoric acid, Lines for leading each of nitric acid and acetic acid to the processing tank 7a are provided independently.
  • the processing speed is supplied from the thick piping to the inner tank 50a because the supply rate is required, but when the processing liquid is replenished, the processing liquid is directed to the outer tank 50b There is.
  • the chemical solution flow meter 44 capable of measuring the flow rate of the passing chemical solution (phosphoric acid, nitric acid, acetic acid), and chemical solution replenishment capable of adjusting the flow rate of each of phosphoric acid, nitric acid, acetic acid
  • a valve 45 is provided.
  • the pure water line 47 is provided with a pure water flow meter 48 for measuring the flow rate of pure water passing through the pure water line 47, and a pure water replenishment valve 49 for adjusting the flow rate of pure water.
  • the control unit 55 controls the chemical solution replenishment valve 45 and the pure water replenishment valve 49 based on the measurement result of the densitometer 24 so that the concentration of the mixed acid aqueous solution in the processing tank 7a becomes the optimum concentration for processing.
  • the range of concentration optimum for treatment is referred to as “specified concentration range”.
  • the concentration control device 40 raises the concentration of pure water, for example, by supplying an appropriate amount (for example, 100 ml) of pure water to the treatment tank 7a, and repeats such control at predetermined intervals.
  • concentration of the mixed acid aqueous solution in the treatment tank 7a is maintained at a predetermined value or more. Further, since the amount of pure water to be supplied at one time is defined, the pure water concentration does not become higher than the allowable range.
  • the amount of the mixed acid aqueous solution in the processing tank 7a falls below a specified amount due to the repetition of the processing of the substrate W, the evaporation of the mixed acid aqueous solution component, etc.
  • the water is replenished, or the chemical solution replenishment valve 45 is controlled to replenish the chemical solution.
  • the concentration of metal ions eluted from the substrate W in the mixed acid aqueous solution increases, which may affect the quality of the etching process. Therefore, the mixed acid aqueous solution in the processing tank 7a is completely exchanged before the quality of the etching process is affected.
  • the interval of the total fluid exchange is, for example, determined in advance by experiments and the like. The period between all liquid replacements can be considered as the lifetime of the mixed acid aqueous solution in the substrate processing apparatus 1.
  • the control unit 55 controls the concentration control unit 40 to control the concentration of the mixed acid aqueous solution, and when the lifetime elapses, the control unit 55 processes The entire solution exchange of the mixed acid aqueous solution in the tank 7a is carried out.
  • FIG. 4 is a diagram showing an example of the timing of the entire solution exchange of the mixed acid aqueous solution in the processing tank 7a.
  • the control unit 55 of the substrate processing apparatus 1 usually carries out full liquid exchange of the mixed acid aqueous solution in the processing tank 7a when the lifetime of the mixed acid aqueous solution has elapsed (FIG. 4, normal mode).
  • the concentration of the mixed acid aqueous solution is defined by the evaporation, decomposition, etc. of the components of the mixed acid aqueous solution until processing of the substrate W is started. It may be out of range.
  • the control unit 55 postpones the total liquid exchange of the mixed acid aqueous solution to the processing start time of the next batch (FIG. 4, saving mode A, saving mode B).
  • saving mode A of FIG. 4 the control unit 55 postpones the implementation of the full fluid exchange until the timing when the next batch is started.
  • the control unit 55 postpones the implementation of the entire liquid exchange until the timing immediately before the processing on the substrate W by the processing tank 7a is performed.
  • the entire liquid exchange is not performed at the time of taking out the substrate W from the buffer unit 2, and the entire liquid exchange of the processing tank 7a is performed immediately before the processing on the substrate W by the processing tank 7a is performed. . That is, in the saving mode A, full liquid exchange is performed triggered by the start of the next batch, and in the saving mode B, full liquid exchange of the processing tank 7 a is carried out triggered by the processing of the substrate W by the processing tank 7 a.
  • the save mode is referred to.
  • the period from the end of the lifetime until the full fluid exchange postponed by the saving mode is implemented is referred to as the postponement period.
  • the period until the lifetime elapses is called a normal period.
  • the control unit 55 for deferring the whole fluid exchange is an example of the “deferment part”, and the process is an example of the “deferment process”.
  • the mixed acid aqueous solution in the processing tank 7a is replaced with a mixed acid aqueous solution adjusted to a concentration within the specified concentration range. Therefore, during the postponement period, control of the concentration of the mixed acid aqueous solution in the processing tank 7a by the control unit 55 may be considered unnecessary. However, when concentration control is not performed during the delaying period, the mixed acid aqueous solution whose concentration has changed during the delaying period is pressure-fed by the circulation pump 21 from the treatment tank 7a to the circulation line 20. Therefore, there is a possibility that the mixed acid aqueous solution having a varied concentration may remain in the circulation line 20 even after the whole liquid exchange.
  • the concentration of the mixed acid aqueous solution in the treatment tank 7a in which the entire liquid exchange has been performed may vary. Furthermore, as a result of the concentration fluctuation, the concentration of the mixed acid aqueous solution in the processing tank 7a may be out of the specified concentration range.
  • the control unit 55 controls the chemical solution replenishment valve 45 and the pure water replenishment valve 49 based on the measurement result of the densitometer 24 even during the postponement period, and the inside of the processing tank 7a
  • the concentration of the mixed acid aqueous solution is controlled to be within the specified concentration range. That is, the control unit 55 continuously carries out concentration control carried out in the normal period also in the postponement period.
  • the control unit 55 which continuously carries out the concentration control carried out in the normal period also in the postponement period is an example of the “concentration control unit”, and the process thereof is an example of the “concentration control step”.
  • FIG. 5 is a diagram showing an example of concentration control of the mixed acid aqueous solution in the embodiment.
  • the control unit 55 controls the concentration of the mixed acid aqueous solution in the processing tank 7a to be within the specified concentration range until the lifetime elapses (the normal period in FIG. 5). .
  • the control unit 55 controls the concentration of the mixed acid aqueous solution in the processing tank 7a to be within the specified concentration range also during the postponement of the total liquid exchange (the postponement period of FIG. 5).
  • a process of replenishing the chemical solution to the processing tank 7a by controlling the chemical solution replenishing valve 45 and a process of replenishing pure water to the processing tank 7a by controlling the pure water replenishment valve 49 are performed.
  • replenishment of pure water or chemical solution in concentration control for example, an appropriate amount of at least one of pure water and chemical solution may be replenished at a predetermined interval, or pure water supplied to the processing tank 7a based on the measurement result of the densitometer 24. The amount of at least one of water and drug solution may be controlled.
  • a process of reheating the mixed acid aqueous solution to a processing temperature suitable for processing is further performed by the heater provided in the temperature controller 22 or the processing tank 7a.
  • the user may select the processing content of concentration control to be performed during the postponement period via the user interface provided in the substrate processing apparatus 1. For example, the reheating process and the process of replenishing the pure water to the processing tank 7a at a predetermined interval are selected as the process contents of concentration control performed during the postponement period, and the selected process is executed during the postponement period. Good.
  • FIG. 6 is a diagram showing an example of replenishment of pure water performed in the concentration control of the embodiment.
  • the upper part of FIG. 6 (step indicated as interval) illustrates the interval (interval) to which pure water is replenished, and the lower part of FIG. 6 (step indicated as replenishment) shows the amount and timing of the pure water to be replenished. It is illustrated. That is, FIG. 6 exemplifies how a suitable amount of pure water is replenished at a predetermined interval.
  • the substrate processing apparatus 1 has transitioned from the normal period to the postponement period at the dotted line in FIG. 6, there is no change in the interval for replenishing pure water and the replenishment amount of pure water before and after that. That is, the control unit 55 of the substrate processing apparatus 1 according to the embodiment continuously carries out the replenishment of pure water performed in the normal period also in the postponement period.
  • FIG. 7 is a diagram showing an example of replenishment of the mixed acid aqueous solution implemented in the concentration control of the embodiment.
  • the stage described as the outer tank quantitative level it is indicated whether or not the height of the liquid surface of the mixed acid aqueous solution in the outer tank 50b of the treatment tank 7a has reached a predetermined quantitative level.
  • the predetermined quantitative level is determined, for example, based on the liquid level of the mixed acid aqueous solution in which processing of the substrate W by the processing tank 7a can be suitably performed. In other words, when the height of the liquid surface has reached the quantitative level, it can be determined that the mixed acid aqueous solution in an amount suitable for processing the substrate W is stored in the processing tank 7a. “ON” in FIG.
  • FIG. 7 exemplifies a state in which a predetermined quantitative level is reached, and “OFF” exemplifies a state in which the predetermined quantitative level is not reached.
  • the lower part of FIG. 7 illustrates the amount and timing of the mixed acid aqueous solution to be replenished. That is, in FIG. 7, when the liquid level of the mixed acid aqueous solution in the outer tank 50b does not reach the fixed level, the mixed acid aqueous solution is replenished to the inner tank 50a or the outer tank 50b until the fixed level is reached.
  • the substrate processing apparatus 1 has transitioned from the normal period to the postponement period at the dotted line in FIG.
  • the level of the mixed acid aqueous solution in the outer tank 50b is predetermined at any time in both the ordinary period and the postponement period.
  • the mixed acid aqueous solution is replenished to the inner tank 50a or the outer tank 50b. That is, the control unit 55 of the substrate processing apparatus 1 according to the embodiment continuously carries out the replenishment of the mixed acid aqueous solution carried out in the normal period also in the postponement period.
  • the control unit 55 suppresses the execution of the batch.
  • the substrate processing apparatus 1 can suppress the quality deterioration of the etching processing on the substrate W.
  • execution of the batch is suppressed when the concentration of the mixed acid aqueous solution is out of the specified concentration range, and the concentration of the mixed acid aqueous solution is specified by the entire liquid exchange. Once within the concentration range, suppression of batch execution is released.
  • the control unit 55 notifies the concentration abnormality without suppressing the execution of the batch during the postponement period.
  • the notification of the concentration abnormality is performed, for example, by outputting a warning message to a display device provided in the substrate processing apparatus 1, outputting a warning sound, or the like.
  • the notification of the concentration abnormality is canceled, for example, when the mixed acid aqueous solution in the processing tank 7a is completely exchanged. With such processing, it can be suppressed that the processing of the substrate W in the saving mode is stopped.
  • the control unit 55 that suppresses the execution of the batch is an example of the “suppression unit”, and the process thereof is an example of the “suppression step”.
  • the densitometer 24 is of the in-line type, but may be of the sampling type. Further, in order to control the concentration of the mixed acid aqueous solution, the concentration may be converted by detecting other parameters having high correlation with the concentration, such as ph and conductivity, instead of the concentration of components such as pure water.
  • the replenishment of pure water is performed in the inner tank 50a of the processing tank 7a, but may be performed in the outer tank 50b. Furthermore, although the control of the replenishment amount of pure water and the like is performed by opening and closing the pure water replenishment valve 49 in the above embodiment, an appropriate amount may be replenished by controlling the pump.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrat, qui soumet un substrat à un traitement prescrit par immersion du substrat dans une solution de traitement qui contient un ou plusieurs produits chimiques et de l'eau pure, qui comprend : une cuve de traitement dans laquelle une solution de traitement pour effectuer le traitement prescrit sur le substrat est stockée; une unité de remplacement de solution de traitement qui remplace la solution de traitement une fois que la durée de vie de la solution de traitement dans la cuve de traitement a été dépassée; une unité de détection qui détecte la concentration de l'eau pure ou d'un autre constituant prescrit dans la solution de traitement; une unité de régulation de concentration qui, jusqu'à ce que la durée de vie soit dépassée, régule la concentration à l'intérieur d'une plage de concentration appropriée pour le traitement prescrit; et une unité de retard qui retarde le remplacement de la solution de traitement par l'unité de remplacement de solution de traitement jusqu'au début du traitement prescrit. En outre, l'unité de régulation de concentration régule également la concentration à l'intérieur d'une plage de concentration appropriée pour le traitement prescrit pendant l'intervalle pendant lequel le remplacement de la solution de traitement est retardé par l'unité de retard.
PCT/JP2018/037812 2017-10-25 2018-10-10 Dispositif de traitement de substrat et procédé de traitement de substrat WO2019082662A1 (fr)

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CN114999899A (zh) * 2022-08-08 2022-09-02 广州粤芯半导体技术有限公司 一种晶圆清洗方法

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KR102323310B1 (ko) 2021-11-05
TW201923878A (zh) 2019-06-16
CN111263975B (zh) 2024-09-20
TWI679696B (zh) 2019-12-11
JP2019079954A (ja) 2019-05-23
CN111263975A (zh) 2020-06-09
KR20200060484A (ko) 2020-05-29

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