WO2019080255A1 - 透明oled显示器及其制作方法 - Google Patents

透明oled显示器及其制作方法

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Publication number
WO2019080255A1
WO2019080255A1 PCT/CN2017/113672 CN2017113672W WO2019080255A1 WO 2019080255 A1 WO2019080255 A1 WO 2019080255A1 CN 2017113672 W CN2017113672 W CN 2017113672W WO 2019080255 A1 WO2019080255 A1 WO 2019080255A1
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WO
WIPO (PCT)
Prior art keywords
layer
storage capacitor
capacitor electrode
anode
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/113672
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English (en)
French (fr)
Inventor
刘兆松
任章淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/742,746 priority Critical patent/US10446633B2/en
Publication of WO2019080255A1 publication Critical patent/WO2019080255A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a transparent OLED display and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • the working temperature has wide adaptability, light volume, fast response, easy to realize color display and large screen display, easy to realize integration with integrated circuit driver, easy to realize flexible display, and the like, and thus has broad application prospects.
  • a transparent display device has been proposed as a novel display device which can see an image displayed from the front of the screen and an object on the back of the transparent display device through the screen.
  • Transparent displays have many possible applications, such as buildings, windows for cars, and display windows for shopping malls. In addition to the applications of these large devices, small devices such as handheld tablets can also benefit from transparent displays. It is expected that a large number of existing display markets will be replaced by transparent displays, such as in the fields of architecture, advertising and public information.
  • FIG. 1 is a schematic cross-sectional view of a conventional transparent OLED display
  • FIG. 2 is a schematic plan view of a sub-pixel region of the transparent OLED display of FIG. 1 , the transparent OLED display including a display area and a peripheral area located around the display area a plurality of sub-pixel regions are disposed in the display area.
  • each sub-pixel region includes an opaque TFT region, an opaque storage capacitor (C st ) region, and a transparent portion other than the TFT region and the C st region.
  • C st opaque storage capacitor
  • the transparent OLED display includes a base substrate 100 , a first metal layer 200 disposed on the base substrate 100 , and is disposed on the base substrate 100 and covers the first a gate insulating layer 300 of the metal layer 200, an active layer 400 disposed on the gate insulating layer 300, an etch stop layer 500 disposed on the gate insulating layer 300 and covering the active layer 400, a second metal layer 600 disposed on the etch stop layer 500, a passivation layer 700 disposed on the etch stop layer 500 and covering the second metal layer 600, and a passivation layer 700 disposed on the passivation layer 700 a flat layer 800, an anode 910 disposed on the flat layer 800, and the flat layer a pixel defining layer 940 on the layer 800 and the anode 910, an opening 945 disposed on the pixel defining layer 940 and corresponding to the anode 910, and an OLED light emitting layer 950 disposed in the opening 945 and located on the anode 910 And a cath
  • the first metal layer 200 includes a gate 210 and a first storage capacitor electrode 220.
  • the second metal layer 600 includes a source 610, a drain 620, and a second storage capacitor electrode 630. ;
  • the gate 210, the active layer 400, the source 610, the drain 620, the anode 910, the OLED light-emitting layer 950, and the cathode 960 are located in the TFT region, and the first storage capacitor electrode 220 and the second storage capacitor electrode 630 are located.
  • the C st region since the first storage capacitor electrode 220 and the second storage capacitor electrode 630 are both made of a metal material, the C st region cannot transmit light, and due to the large area of the C st region, a certain amount of waste is wasted.
  • the light area and aperture ratio reduce the transparent display of the transparent OLED display.
  • the terminal (Pad) 930 located in the peripheral region is usually prepared by using the same material in the same process as the anode 910, and the terminal 930 and the anode 910 are both made of two layers of indium oxide.
  • a composite layer composed of a silver film 932 is interposed between the tin (ITO) film 931. Since the terminal 930 is located in the peripheral area of the transparent OLED display and exposed to the external environment, it is easy to contact with water and oxygen, resulting in the terminal 930. The silver film 932 is corroded, thereby affecting the electrical performance and service life of the terminal 930.
  • An object of the present invention is to provide a method for fabricating a transparent OLED display, which can improve the light transmittance of the transparent OLED display, improve the transparent display effect of the transparent OLED display, and improve the electrical performance and service life of the terminal.
  • the present invention provides a method for fabricating a transparent OLED display, wherein a first storage capacitor electrode is prepared using a transparent metal oxide semiconductor material, and a second storage capacitor electrode is prepared using a transparent conductive oxide material, the second storage capacitor The electrode and the first storage capacitor electrode together form a storage capacitor.
  • the manufacturing method of the transparent OLED display specifically includes the following steps:
  • Step S1 providing a substrate, forming a gate on the substrate, and forming a gate insulating layer covering the gate on the substrate;
  • Step S2 forming an active layer corresponding to the upper surface of the gate and a first storage capacitor electrode spaced apart from the active layer on the gate insulating layer; the active layer and the first storage capacitor electrode are both transparent metal Preparation of an oxide semiconductor material;
  • Step S3 forming an etch stop layer covering the active layer and the first storage capacitor electrode on the gate insulating layer, and forming first via holes and second holes corresponding to the two ends of the active layer on the etch barrier layer Through hole
  • Step S4 forming a source and a drain on the etch barrier layer, wherein the source and the drain are respectively in contact with the second via and the two ends of the active layer via the first via hole;
  • Step S5 forming a passivation layer covering the source and the drain on the etch barrier layer, and forming a third via hole corresponding to the upper side of the first storage capacitor electrode on the passivation layer and corresponding to the top of the drain First via;
  • Step S6 depositing a first transparent conductive oxide layer and an anode metal layer in this order from bottom to top on the flat layer, and patterning the first transparent conductive oxide layer and the anode metal layer to obtain a predetermined pattern of the anode;
  • the anode includes a first transparent conductive oxide layer, an anode metal layer, and a second transparent conductive oxide layer which are sequentially stacked on the flat layer from bottom to top, and the second storage capacitor electrode is disposed on the Etching the second transparent conductive oxide layer on the barrier layer;
  • the anode is in contact with the drain via the fourth via hole, and the second storage capacitor electrode and the first storage capacitor electrode together constitute a storage capacitor;
  • Step S7 forming a pixel defining layer on the anode, the second storage capacitor electrode, and the flat layer, and forming an opening corresponding to the anode on the pixel defining layer;
  • An OLED light emitting layer is formed on the anode in the opening, and a cathode covering the OLED light emitting layer is formed on the OLED light emitting layer and the pixel defining layer.
  • the substrate substrate includes a display area and a peripheral area located around the display area; in the step S6, after the second transparent conductive oxide layer is patterned, after the anode and the second storage capacitor electrode are obtained, A terminal is provided on the planar layer and located in the peripheral region, the terminal comprising a second transparent conductive oxide layer disposed on the planar layer.
  • the first transparent conductive oxide layer and the second transparent conductive oxide layer are both prepared from a transparent conductive oxide material, the transparent conductive oxide material comprises indium tin oxide; the material of the anode metal layer comprises silver; The thickness of the first transparent conductive oxide layer and the second transparent conductive oxide layer are both The thickness of the anode metal layer is
  • the method for preparing the active layer and the first storage capacitor electrode comprises: depositing a transparent metal oxide semiconductor material on the gate insulating layer, and patterning the transparent metal oxide semiconductor material by using a photolithography process Obtaining an active layer and a first storage capacitor electrode; the transparent metal oxide semiconductor material comprising one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide; The thickness of the active layer and the first storage capacitor electrode is
  • the present invention also provides a transparent OLED display comprising: a first storage capacitor electrode prepared from a transparent metal oxide semiconductor material; and a second storage capacitor electrode prepared from a transparent conductive oxide material; the second storage capacitor electrode and The first storage capacitor electrodes collectively constitute a storage capacitor.
  • the transparent OLED display specifically includes: a substrate substrate, a gate electrode disposed on the substrate substrate, a gate insulating layer disposed on the substrate substrate and covering the gate electrode, disposed on the gate insulating layer and corresponding to An active layer above the gate, a first storage capacitor electrode disposed on the gate insulating layer and spaced apart from the active layer, and an etch barrier disposed on the gate insulating layer and covering the active layer and the first storage capacitor electrode a layer, a source and a drain disposed on the etch stop layer, a passivation layer disposed on the etch stop layer and covering the source and the drain, a flat layer disposed on the passivation layer, and being disposed on the flat layer An anode on the layer, a second storage capacitor electrode disposed on the etch barrier layer corresponding to the first storage capacitor electrode, a pixel definition layer disposed on the anode, the second storage capacitor electrode, and the flat layer, and is disposed in the pixel definition An OLED light-emitting layer disposed on the layer
  • a first via hole and a second via hole corresponding to both ends of the active layer are disposed on the etch barrier layer, and the passivation layer is provided with a third via hole corresponding to the upper portion of the first storage capacitor electrode, the flat a fourth via hole corresponding to the upper surface of the drain is disposed on the layer and the passivation layer, and a fifth via hole is disposed on the flat layer in a region of the third via hole;
  • the source and the drain are respectively in contact with the second via and the two ends of the active layer via the first via; the anode is in contact with the drain via the fourth via, and the second storage capacitor is provided An etch barrier layer at the bottom of the fifth via hole; the second storage capacitor electrode and the first storage capacitor electrode together form a storage capacitor;
  • the active layer and the first storage capacitor electrode are both made of a transparent metal oxide semiconductor material;
  • the anode includes a first transparent conductive oxide layer, an anode metal layer, and a layer which are sequentially stacked on the flat layer from bottom to top.
  • a second transparent conductive oxide layer, wherein the second storage capacitor electrode comprises a second transparent conductive oxide layer disposed on the etch barrier layer.
  • the substrate substrate includes a display area and a peripheral area located at a periphery of the display area; the transparent OLED display further includes: a connection terminal disposed on the flat layer and located in the peripheral area, the connection terminal including the first layer disposed on the flat layer Two transparent conductive oxide layers.
  • the first transparent conductive oxide layer and the second transparent conductive oxide layer are both prepared from a transparent conductive oxide material, the transparent conductive oxide material comprises indium tin oxide; the material of the anode metal layer comprises silver; The thickness of the first transparent conductive oxide layer and the second transparent conductive oxide layer are both The thickness of the anode metal layer is
  • the transparent metal oxide semiconductor material includes one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide; the thickness of the active layer and the first storage capacitor electrode is
  • the invention also provides a method for fabricating a transparent OLED display, wherein a first storage capacitor electrode is prepared by using a transparent metal oxide semiconductor material, a second storage capacitor electrode is prepared by using a transparent conductive oxide material, and the second storage capacitor electrode is first The storage capacitor electrodes together constitute a storage capacitor;
  • the specific steps include the following steps:
  • Step S1 providing a substrate, forming a gate on the substrate, and forming a gate insulating layer covering the gate on the substrate;
  • Step S2 forming an active layer corresponding to the upper surface of the gate and a first storage capacitor electrode spaced apart from the active layer on the gate insulating layer; the active layer and the first storage capacitor electrode are both transparent metal Preparation of an oxide semiconductor material;
  • Step S3 forming an etch stop layer covering the active layer and the first storage capacitor electrode on the gate insulating layer, and forming a first via hole and a second via hole corresponding to both ends of the active layer on the etch barrier layer ;
  • Step S4 forming a source and a drain on the etch barrier layer, wherein the source and the drain are respectively in contact with the second via and the two ends of the active layer via the first via hole;
  • Step S5 forming a passivation layer covering the source and the drain on the etch barrier layer, and forming a third via hole corresponding to the upper side of the first storage capacitor electrode on the passivation layer and corresponding to the top of the drain First via;
  • Step S6 depositing a first transparent conductive oxide layer and an anode metal layer in this order from bottom to top on the flat layer, and patterning the first transparent conductive oxide layer and the anode metal layer to obtain a predetermined pattern of the anode;
  • the anode includes a first transparent conductive oxide layer, an anode metal layer, and a second transparent conductive oxide layer which are sequentially stacked on the flat layer from bottom to top, and the second storage capacitor electrode is disposed on the Etching the second transparent conductive oxide layer on the barrier layer;
  • the anode is in contact with the drain via the fourth via hole, and the second storage capacitor electrode and the first storage capacitor electrode together constitute a storage capacitor;
  • Step S7 forming a pixel defining layer on the anode, the second storage capacitor electrode, and the flat layer, and forming an opening corresponding to the anode on the pixel defining layer;
  • the substrate substrate includes a display area and a peripheral area located around the display area.
  • the anode and the second storage capacitor electrode are obtained. And obtaining a terminal on the flat layer and located in the peripheral region, the terminal comprising a second transparent conductive oxide layer disposed on the flat layer;
  • the first transparent conductive oxide layer and the second transparent conductive oxide layer are both prepared from a transparent conductive oxide material
  • the transparent conductive oxide material comprises indium tin oxide
  • the material of the anode metal layer comprises silver
  • the thickness of the first transparent conductive oxide layer and the second transparent conductive oxide layer are both The thickness of the anode metal layer
  • the method for preparing the active layer and the first storage capacitor electrode comprises: depositing a transparent metal oxide semiconductor material on the gate insulating layer, and patterning the transparent metal oxide semiconductor material by using a photolithography process After the treatment, an active layer and a first storage capacitor electrode are obtained; the transparent metal oxide semiconductor material comprises one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide; The thickness of the active layer and the first storage capacitor electrode is
  • the transparent OLED display of the present invention is formed by forming an active layer and a first storage capacitor electrode in the same process, so that the first storage capacitor electrode is prepared from a transparent metal oxide semiconductor material and passes through two channels.
  • the lithography process is used to fabricate the anode and the second storage capacitor electrode, so that the second storage capacitor electrode is made only of the transparent conductive oxide material, so that the storage capacitor region where the first storage capacitor electrode and the second storage capacitor electrode are located is presented as
  • the transparent area improves the light transmittance of the transparent OLED display and enhances the transparent display effect of the transparent OLED display.
  • the terminal block located in the peripheral region is formed, so that the terminal is only prepared by the transparent conductive oxide material to prevent it from being corroded by external water, thereby improving its electrical performance and service life. , thereby increasing the service life of transparent OLED displays.
  • the transparent OLED display of the invention is prepared by the above method and has high light transmission. The ratio is better with a transparent display and has a longer service life.
  • FIG. 1 is a cross-sectional view showing a conventional transparent OLED display
  • FIG. 2 is a schematic plan view showing a sub-pixel area of the transparent OLED display of FIG. 1;
  • FIG. 3 is a flow chart of a method of fabricating a transparent OLED display of the present invention.
  • step S1 is a schematic diagram of step S1 of a method for fabricating a transparent OLED display of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating a transparent OLED display of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating a transparent OLED display of the present invention.
  • step S4 of the method for fabricating a transparent OLED display of the present invention
  • step S5 is a schematic diagram of step S5 of the method for fabricating a transparent OLED display of the present invention.
  • FIG. 9 and FIG. 10 are schematic diagrams showing a step S6 of a method for fabricating a transparent OLED display according to the present invention.
  • FIG. 11 is a schematic view showing a step S7 of a method for fabricating a transparent OLED display of the present invention and a schematic cross-sectional view of the transparent OLED display of the present invention;
  • FIG. 12 is a schematic plan view showing a sub-pixel region of a transparent OLED display of the present invention.
  • the present invention provides a method for fabricating a transparent OLED display, including the following steps:
  • Step S1 as shown in FIG. 4, a base substrate 10 is provided, and a gate electrode 20 is formed on the base substrate 10, and a gate insulating layer 30 covering the gate electrode 20 is formed on the base substrate 10.
  • the base substrate 10 includes a display area and a peripheral area located at a periphery of the display area.
  • the method for preparing the gate electrode 20 includes: depositing a gate metal material on the substrate substrate 10, and patterning the gate metal material by a photolithography process to obtain a gate electrode 20.
  • the gate electrode 20 includes a first gate metal layer and a second gate metal layer which are sequentially stacked on the substrate substrate 10 from bottom to top, and the material of the first gate metal layer is molybdenum. (Mo), titanium (Ti), or molybdenum-titanium alloy, the material of the second gate metal layer being copper (Cu).
  • Mo molybdenum
  • Ti titanium
  • Cu copper
  • the thickness of the gate 20 is
  • the gate insulating layer 30 includes a silicon oxide (SiO x ) layer, a silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the thickness of the gate insulating layer 30 is
  • Step S2 as shown in FIG. 5, forming an active layer 40 corresponding to the upper portion of the gate electrode 20 and a first storage capacitor electrode 41 spaced apart from the active layer 40 on the gate insulating layer 30; Both the layer 40 and the first storage capacitor electrode 41 are made of a transparent metal oxide semiconductor material.
  • the method for preparing the active layer 40 and the first storage capacitor electrode 41 includes: depositing a transparent metal oxide semiconductor material on the gate insulating layer 30, and using the photolithography process to the transparent metal oxide semiconductor After the material is patterned, the active layer 40 and the first storage capacitor electrode 41 are obtained.
  • the transparent metal oxide semiconductor material includes one or more of indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), and indium gallium zinc tin oxide (IGZTO).
  • IGZO indium gallium zinc oxide
  • IZTO indium zinc tin oxide
  • IGZTO indium gallium zinc tin oxide
  • the thickness of the active layer 40 and the first storage capacitor electrode 41 is
  • Step S3 as shown in FIG. 6, an etch stop layer 50 covering the active layer 40 and the first storage capacitor electrode 41 is formed on the gate insulating layer 30, and an active layer is formed on the etch barrier layer 50.
  • the etch barrier layer 50 includes a silicon oxide (SiO x ) layer, a silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the thickness of the etch stop layer 50 is
  • Step S4 as shown in FIG. 7, a source 61 and a drain 62 are formed on the etch stop layer 50, and the source 61 and the drain 62 are respectively connected to the second via 52 and the second via 52. Both ends of the source layer 40 are in contact.
  • the source 61 and the drain 62 are prepared by depositing a source/drain metal material on the etch barrier layer 50, and patterning the source and drain metal materials by a photolithography process to obtain a source.
  • the pole 61 and the drain 62 are formed by depositing a source/drain metal material on the etch barrier layer 50, and patterning the source and drain metal materials by a photolithography process to obtain a source.
  • the pole 61 and the drain 62 are prepared by depositing a source/drain metal material on the etch barrier layer 50, and patterning the source and drain metal materials by a photolithography process to obtain a source.
  • the pole 61 and the drain 62 are prepared by depositing a source/drain metal material on the etch barrier layer 50, and patterning the source and drain metal materials by a photolithography process to obtain a source.
  • the source 61 and the drain 62 include a first source/drain metal layer and a second source/drain metal layer which are sequentially stacked on the etch barrier layer 50 from bottom to top, the first source drain
  • the material of the polar metal layer is molybdenum (Mo), titanium (Ti), or molybdenum titanium alloy
  • the material of the second source and drain metal layer is copper (Cu).
  • the thickness of the source 61 and the drain 62 is
  • Step S5 as shown in FIG. 8, a passivation layer 70 covering the source 61 and the drain 62 is formed on the etch barrier layer 50, and a corresponding storage capacitor electrode 41 is formed on the passivation layer 70. a third through hole 73 above and a first via 841 corresponding to the upper side of the drain 62;
  • a flat layer 80 is formed on the passivation layer 70, and a second via hole 842 corresponding to the first via hole 841 is formed on the flat layer 80.
  • the first via hole 841 and the second via hole 842 form a first
  • the through hole 84 is formed at the same time as the fifth through hole 85 in the region of the flat layer 80 located in the third through hole 73.
  • the passivation layer 70 includes a silicon oxide (SiO x ) layer, a silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the thickness of the passivation layer 70 is
  • the material of the flat layer 80 is a photoresist material, and the specific composition of the photoresist material is not limited.
  • the thickness of the flat layer 80 is
  • Step S6 depositing a first transparent conductive oxide layer 911 and an anode metal layer 912 on the flat layer 80 from bottom to top, for the first transparent conductive oxide layer 911 and The anode metal layer 912 is patterned to obtain an anode predetermined pattern 901;
  • the anode 91 includes a first transparent conductive oxide layer 911, an anode metal layer 912, and a second transparent conductive oxide layer 913 which are sequentially stacked on the flat layer 80 from bottom to top, and the second storage capacitor electrode 92 includes a second transparent conductive oxide layer 913 disposed on the etch stop layer 50;
  • the anode 91 is in contact with the drain 62 via the fourth via hole 84, and the second storage capacitor electrode 92 and the first storage capacitor electrode 41 together constitute a storage capacitor.
  • the anode layer 91 and the second storage capacitor electrode 92 are also obtained on the flat layer 80 and located in the peripheral region.
  • the terminal 93 includes a second transparent conductive oxide layer 913 disposed on the planar layer 80.
  • the terminal 93 is connected to the driving IC to transmit an electrical signal in the driving IC to the data line and the gate line. Since the terminal 93 is composed only of the second transparent conductive oxide layer 913, the terminal 93 of the present invention is not compared with the conventional terminal formed by sandwiching a silver thin film of two layers of indium tin oxide (ITO) film. Containing metallic silver, it is not easily corroded by water, has good electrical properties and long service life.
  • ITO indium tin oxide
  • etch stop layer 50 is disposed between the second storage capacitor electrode 92 and the first storage capacitor electrode 41, that is, the thickness of the insulating layer between the two plates of the storage capacitor is small, so that a large storage capacitor can be obtained. Improve the display of the LCD display.
  • the first transparent conductive oxide layer 911 and the second transparent conductive oxide layer 913 are both prepared from a transparent conductive oxide material including indium tin oxide (ITO); the anode metal
  • the material of layer 912 includes silver (Ag).
  • the thickness of the first transparent conductive oxide layer 911 and the second transparent conductive oxide layer 913 are both The thickness of the anode metal layer 912 is
  • Step S7 as shown in FIG. 11, a pixel defining layer 94 is formed on the anode 91, the second storage capacitor electrode 92, and the flat layer 80, and a pixel defining layer 94 is formed on the pixel defining layer 94 corresponding to the upper portion of the anode 91. Opening 941;
  • An OLED light emitting layer 95 is formed on the anode 91 in the opening 941, and a cathode 96 covering the OLED light emitting layer 95 is formed on the OLED light emitting layer 95 and the pixel defining layer 94.
  • the material of the pixel defining layer 94 is a photoresist material, and specific components of the photoresist material are not limited.
  • the thickness of the pixel defining layer 94 is
  • the OLED light emitting layer 95 is prepared by an evaporation method or an inkjet printing (IJP) method.
  • the cathode 96 is a transparent electrode, and the OLED device composed of the anode 91, the OLED light-emitting layer 95, and the cathode 96 realizes top emission.
  • the material of the cathode 96 is indium tin oxide (ITO).
  • the transparent OLED display produced by the present invention comprises a display area and a peripheral area located around the periphery of the display area, the terminal 93 is located in the peripheral area, and the display area is provided with a plurality of sub-areas.
  • each sub-pixel region including an opaque TFT region, a transparent storage capacitor (C st ) region, and a transparent region other than the TFT region and the storage capacitor region, the gate electrode 20, the active layer 40, and the source electrode 61
  • the drain electrode 62, the anode 91, the OLED light emitting layer 95, and the cathode 96 are located in the TFT region, and the first storage capacitor electrode 41 and the second storage capacitor electrode 92 are located in the storage capacitor region, compared with the prior art.
  • the invention sets the storage capacitor area as a transparent area, can improve the light transmittance of about 20%, and enhance the transparent display effect of the transparent OLED display.
  • the method for fabricating the transparent OLED display of the present invention forms the active layer 40 and the first storage capacitor electrode 41 in the same process, so that the first storage capacitor electrode 41 is made of a transparent metal oxide semiconductor material and passes through two photolithography processes.
  • the anode 91 and the second storage capacitor electrode 92 are fabricated such that the second storage capacitor electrode 92 is made only of a transparent conductive oxide material, so that the storage capacitor region where the first storage capacitor electrode 41 and the second storage capacitor electrode 92 are located Rendered as a transparent area, Improve the light transmittance of transparent OLED displays and enhance the transparent display of transparent OLED displays.
  • the terminal 93 located in the peripheral region is formed, so that the terminal 93 is only prepared from a transparent conductive oxide material to prevent it from being corroded by external water oxygen, thereby improving its electrical power. Performance and longevity, which in turn increases the life of transparent OLED displays.
  • the present invention further provides a transparent OLED display, comprising: a substrate substrate 10, a gate electrode 20 disposed on the substrate substrate 10, and a substrate disposed on the substrate.
  • a gate insulating layer 30 on the substrate 10 and covering the gate 20 an active layer 40 disposed on the gate insulating layer 30 and corresponding to the gate 20 , and disposed on the gate insulating layer 30 and the active layer 40 a first storage capacitor electrode 41 disposed at intervals, an etch stop layer 50 disposed on the gate insulating layer 30 and covering the active layer 40 and the first storage capacitor electrode 41, and a source 61 and a drain provided on the etch barrier layer 50 a pole 62, a passivation layer 70 disposed on the etching stopper layer 50 and covering the source 61 and the drain 62, a flat layer 80 provided on the passivation layer 70, and an anode 91 provided on the flat layer 80.
  • a pixel defining layer 94 and corresponding to the opening 941 above the anode 91 disposed in the opening 941 and located in the anode OLED light emitting layer 95 on 91, and a cathode 96 disposed on and covering the OLED light emitting layer 95 over the OLED light emitting layer 95 and pixel definition layer 94.
  • a first via hole 51 and a second via hole 52 corresponding to the two ends of the active layer 40 are disposed on the etch stop layer 50, and the passivation layer 70 is provided with a third portion corresponding to the upper portion of the first storage capacitor electrode 41.
  • the through hole 73, the flat layer 80 and the passivation layer 70 are provided with a fourth through hole 84 corresponding to the upper side of the drain electrode 62, and the fifth layer is provided in the flat layer 80 in the region of the third through hole 73.
  • the source 61 and the drain 62 are respectively in contact with the second via 52 and both ends of the active layer 40 via the first via 51; the anode 91 is in contact with the drain 62 via the fourth via 84,
  • the second storage capacitor electrode 92 is disposed on the etch stop layer 50 at the bottom of the fifth via hole 85; the second storage capacitor electrode 92 and the first storage capacitor electrode 41 together form a storage capacitor;
  • the active layer 40 and the first storage capacitor electrode 41 are both made of a transparent metal oxide semiconductor material; the anode 91 includes a first transparent conductive oxide layer 911 and an anode which are sequentially stacked on the flat layer 80 from bottom to top.
  • the metal layer 912 and the second transparent conductive oxide layer 913 include a second transparent conductive oxide layer 913 disposed on the etch stop layer 50 and the planar layer 80.
  • the base substrate 10 includes a display area and a peripheral area located at a periphery of the display area.
  • the gate electrode 20 includes a first gate metal layer and a second gate metal layer which are sequentially stacked on the substrate substrate 10 from bottom to top, and the material of the first gate metal layer is molybdenum. (Mo), titanium (Ti), or molybdenum-titanium alloy, the material of the second gate metal layer being copper (Cu).
  • Mo molybdenum
  • Ti titanium
  • Cu copper
  • the thickness of the gate 20 is
  • the gate insulating layer 30 includes a silicon oxide (SiO x ) layer, a silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the thickness of the gate insulating layer 30 is
  • the transparent metal oxide semiconductor material includes one or more of indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), and indium gallium zinc tin oxide (IGZTO).
  • IGZO indium gallium zinc oxide
  • IZTO indium zinc tin oxide
  • IGZTO indium gallium zinc tin oxide
  • the thickness of the active layer 40 and the first storage capacitor electrode 41 is
  • the etch barrier layer 50 includes a silicon oxide (SiO x ) layer, a silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the thickness of the etch stop layer 50 is
  • the source 61 and the drain 62 include a first source/drain metal layer and a second source/drain metal layer which are sequentially stacked on the etch barrier layer 50 from bottom to top, the first source drain
  • the material of the polar metal layer is molybdenum (Mo), titanium (Ti), or molybdenum titanium alloy
  • the material of the second source and drain metal layer is copper (Cu).
  • the thickness of the source 61 and the drain 62 is
  • the passivation layer 70 includes a silicon oxide (SiO x ) layer, a silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer.
  • the thickness of the passivation layer 70 is
  • the material of the flat layer 80 is a photoresist material, and the specific composition of the photoresist material is not limited.
  • the thickness of the flat layer 80 is
  • the transparent OLED display further includes: a terminal 93 disposed on the flat layer 80 and located in the peripheral region, and the terminal 93 includes a second transparent conductive oxide layer 913 disposed on the planar layer 80.
  • the first transparent conductive oxide layer 911 and the second transparent conductive oxide layer 913 are both prepared from a transparent conductive oxide material including indium tin oxide (ITO); the anode metal
  • the material of layer 912 includes silver (Ag).
  • the thickness of the first transparent conductive oxide layer 911 and the second transparent conductive oxide layer 913 are both The thickness of the anode metal layer 912 is
  • the material of the pixel defining layer 94 is a photoresist material, and specific components of the photoresist material are not limited.
  • the thickness of the pixel defining layer 94 is
  • the cathode 96 is a transparent electrode, and is made of an anode 91, an OLED light-emitting layer 95,
  • the OLED device composed of the cathode 96 realizes top emission.
  • the material of the cathode 96 is indium tin oxide (ITO).
  • the transparent OLED display of the present invention comprises a first storage capacitor electrode 41 made of a transparent metal oxide semiconductor material and a second storage capacitor electrode 92 made of a transparent conductive oxide material, the first storage capacitor electrode 41 and the second storage
  • the storage capacitor region where the capacitor electrode 92 is located appears as a transparent region, so the transparent OLED display of the present invention has higher light transmittance and better transparent display effect; and the terminal 93 located in the peripheral region of the transparent OLED display is
  • the transparent conductive oxide material is not easily corroded by external water, has good electrical properties and long service life, and the transparent OLED display of the invention has a long service life.
  • the present invention provides a transparent OLED display and a method of fabricating the same.
  • the method for fabricating the transparent OLED display of the present invention forms the active layer and the first storage capacitor electrode in the same process, so that the first storage capacitor electrode is prepared from a transparent metal oxide semiconductor material, and the anode is fabricated by two photolithography processes.
  • the second storage capacitor electrode is configured to prepare the second storage capacitor electrode only by the transparent conductive oxide material, so that the storage capacitor region where the first storage capacitor electrode and the second storage capacitor electrode are located is a transparent region, and the transparent OLED is improved.
  • the light transmittance of the display enhances the transparent display of the transparent OLED display.
  • the terminal block located in the peripheral region is formed, so that the terminal is only prepared by the transparent conductive oxide material to prevent it from being corroded by external water, thereby improving its electrical performance and service life. , thereby increasing the service life of transparent OLED displays.
  • the transparent OLED display of the invention is obtained by the above method, has high light transmittance and good transparent display effect, and has a long service life.

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Abstract

提供一种透明OLED显示器及其制作方法。透明OLED显示器的制作方法将有源层（40）与第一储存电容电极（41）在同一制程中形成，使第一储存电容电极由透明金属氧化物半导体材料制备，并通过两道光刻制程来制作阳极（91）和第二储存电容电极（92），使第二储存电容电极仅由透明导电氧化物材料制备，从而使第一储存电容电极与第二储存电容电极所在的储存电容区呈现为透明区域，提高透明OLED显示器的光透过率，提升透明OLED显示器的透明显示效果。进一步的，在制作阳极和第二储存电容电极的同时，形成位于外围区的接线端子（93），使接线端子仅由透明导电氧化物材料制备，防止其被外界水氧腐蚀，提升透明OLED显示器的使用寿命。

Description

透明OLED显示器及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种透明OLED显示器及其制作方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
随着显示技术的发展，透明显示装置作为一种新奇的显示手段被提出，这种透明显示装置既可以从屏幕正面看到显示的图像，又可以透过屏幕看到透明显示装置背面的物体。透明显示器具有许多可能的应用，例如建筑物、汽车的窗户和购物商场的展示窗。除了这些大型设备的应用以外，诸如手持式平板电脑的小型设备也可得益于透明显示器。预期大量的现有显示器市场将被透明显示器取代，例如在建筑、广告和公共信息领域。
图1为现有的一种透明OLED显示器的剖视示意图，图2为图1的透明OLED显示器的子像素区域的平面结构示意图，所述透明OLED显示器包括显示区与位于显示区周边的外围区，所述显示区内设有多个子像素区域，如图2所示，每个子像素区域包括不透明的TFT区、不透明的储存电容(Cst)区、以及除TFT区与Cst区以外的透明区；如图1所示，所述透明OLED显示器包括衬底基板100、设于所述衬底基板100上的第一金属层200、设于所述衬底基板100上且覆盖所述第一金属层200的栅极绝缘层300、设于所述栅极绝缘层300上的有源层400、设于所述栅极绝缘层300上且覆盖所述有源层400的蚀刻阻挡层500、设于所述蚀刻阻挡层500上的第二金属层600、设于所述蚀刻阻挡层500上且覆盖所述第二金属层600的钝化层700、设于所述钝化层700上的平坦层800、设于所述平坦层800上的阳极910、设于所述平坦层800与阳极910上的像素定义层940、设于所述像素定义层940上且对应于阳极910上方的开口945、设于所述开口945内且位于所述阳极910上的OLED发光层950、及设于所述OLED发光层950与像素定义层940上的阴极960；
其中，所述第一金属层200包括间隔设置的栅极210与第一储存电容电极220；所述第二金属层600包括间隔设置的源极610、漏极620、及第二储存电容电极630；
所述栅极210、有源层400、源极610、漏极620、阳极910、OLED发光层950、及阴极960位于TFT区内，所述第一储存电容电极220与第二储存电容电极630位于Cst区内，由于所述第一储存电容电极220与第二储存电容电极630均由金属材料制备，因此Cst区不能透光，由于Cst区的面积较大，浪费了一定的透光面积与开口率，从而降低了透明OLED显示器的透明显示效果。另外，在透明OLED显示器的制备过程中，位于外围区的接线端子(Pad)930通常与阳极910在同一制程中采用同种材料制备，所述接线端子930与阳极910均为由两层氧化铟锡(ITO)薄膜931之间夹设一层银薄膜932构成的复合层，由于接线端子930位于透明OLED显示器的外围区且暴露于外界环境中，因此容易接触水氧，导致接线端子930中的银薄膜932被腐蚀，从而影响接线端子930的电学性能与使用寿命。
发明内容
本发明的目的在于提供一种透明OLED显示器的制作方法，能够提高透明OLED显示器的光透过率，提升透明OLED显示器的透明显示效果，并且能够提升接线端子的电学性能与使用寿命。
本发明的目的还在于提供一种透明OLED显示器，具有较高的光透过率与较好的透明显示效果，其接线端子具有较好的电学性能与较长的使用寿命。
为实现上述目的，本发明提供一种透明OLED显示器的制作方法，采用透明金属氧化物半导体材料制备第一储存电容电极，采用透明导电氧化物材料制备第二储存电容电极，所述第二储存电容电极与第一储存电容电极共同构成储存电容。
所述透明OLED显示器的制作方法具体包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成栅极，在所述衬底基板上形成覆盖所述栅极的栅极绝缘层；
步骤S2、在所述栅极绝缘层上形成对应于栅极上方的有源层以及与有源层间隔设置的第一储存电容电极；所述有源层与第一储存电容电极均由透明金属氧化物半导体材料制备；
步骤S3、在所述栅极绝缘层上形成覆盖有源层与第一储存电容电极的蚀刻阻挡层，并在蚀刻阻挡层上形成对应于有源层两端的第一通孔与第二 通孔；
步骤S4、在所述蚀刻阻挡层上形成源极与漏极，所述源极与漏极分别经由第一通孔与第二通孔和有源层的两端相接触；
步骤S5、在所述蚀刻阻挡层上形成覆盖所述源极与漏极的钝化层，并在钝化层上形成对应于第一储存电容电极上方的第三通孔以及对应于漏极上方的第一过孔；
在所述钝化层上形成平坦层，在平坦层上形成对应于第一过孔上方的第二过孔，所述第一过孔与第二过孔共同构成第四通孔，同时在平坦层上位于第三通孔的区域内形成第五通孔；
步骤S6、在所述平坦层上从下至上依次沉积第一透明导电氧化物层与阳极金属层，对所述第一透明导电氧化物层与阳极金属层进行图形化处理，得到阳极预定图案；
在所述阳极预定图案、平坦层、及蚀刻阻挡层上沉积第二透明导电氧化物层，对第二透明导电氧化物层进行图形化处理，得到位于平坦层上且对应于所述阳极预定图案的阳极以及位于所述第五通孔底部的蚀刻阻挡层上的第二储存电容电极；
所述阳极包括在所述平坦层上从下至上依次层叠设置的第一透明导电氧化物层、阳极金属层、及第二透明导电氧化物层，所述第二储存电容电极包括设于所述蚀刻阻挡层上的第二透明导电氧化物层；
所述阳极经由第四通孔与漏极相接触，所述第二储存电容电极与第一储存电容电极共同构成储存电容；
步骤S7、在所述阳极、第二储存电容电极、及平坦层上形成像素定义层，在所述像素定义层上形成对应于所述阳极上方的开口；
在所述开口内的阳极上形成OLED发光层，在所述OLED发光层与像素定义层上形成覆盖所述OLED发光层的阴极。
所述衬底基板包括显示区与位于显示区周边的外围区；所述步骤S6中，对第二透明导电氧化物层进行图形化处理后，在得到阳极与第二储存电容电极的同时，还得到位于平坦层上且位于外围区的接线端子，所述接线端子包括设于平坦层上的第二透明导电氧化物层。
所述第一透明导电氧化物层与第二透明导电氧化物层均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡；所述阳极金属层的材料包括银；所述第一透明导电氧化物层与第二透明导电氧化物层的厚度均为
Figure PCTCN2017113672-appb-000001
所述阳极金属层的厚度为
Figure PCTCN2017113672-appb-000002
所述有源层与第一储存电容电极的制备方法包括：在所述栅极绝缘层 上沉积透明金属氧化物半导体材料，利用光刻制程对所述透明金属氧化物半导体材料进行图形化处理后，得到有源层与第一储存电容电极；所述透明金属氧化物半导体材料包括铟镓锌氧化物、铟锌锡氧化物、及铟镓锌锡氧化物中的一种或多种；所述有源层与第一储存电容电极的厚度为
Figure PCTCN2017113672-appb-000003
本发明还提供一种透明OLED显示器，包括：由透明金属氧化物半导体材料制备的第一储存电容电极、以及由透明导电氧化物材料制备的第二储存电容电极；所述第二储存电容电极与第一储存电容电极共同构成储存电容。
所述透明OLED显示器具体包括：衬底基板、设于所述衬底基板上的栅极、设于衬底基板上且覆盖栅极的栅极绝缘层、设于栅极绝缘层上且对应于栅极上方的有源层、设于栅极绝缘层上且与有源层间隔设置的第一储存电容电极、设于栅极绝缘层上且覆盖有源层与第一储存电容电极的蚀刻阻挡层、设于蚀刻阻挡层上的源极与漏极、设于蚀刻阻挡层上且覆盖所述源极与漏极的钝化层、设于所述钝化层上的平坦层、设于平坦层上的阳极、设于蚀刻阻挡层上且对应于第一储存电容电极上方的第二储存电容电极、设于阳极、第二储存电容电极、及平坦层上的像素定义层、设于像素定义层上且对应于阳极上方的开口、设于开口内且位于阳极上的OLED发光层、以及设于OLED发光层与像素定义层上且覆盖所述OLED发光层的阴极；
所述蚀刻阻挡层上设有对应于有源层两端的第一通孔与第二通孔，所述钝化层上设有对应于第一储存电容电极上方的第三通孔，所述平坦层与钝化层上设有对应于漏极上方的第四通孔，所述平坦层上位于第三通孔的区域内设有第五通孔；
所述源极与漏极分别经由第一通孔与第二通孔和有源层的两端相接触；所述阳极经由第四通孔与漏极相接触，所述第二储存电容电极设于第五通孔底部的蚀刻阻挡层上；所述第二储存电容电极与第一储存电容电极共同构成储存电容；
所述有源层与第一储存电容电极均由透明金属氧化物半导体材料制备；所述阳极包括在平坦层上从下至上依次层叠设置的第一透明导电氧化物层、阳极金属层、及第二透明导电氧化物层，所述第二储存电容电极包括设于所述蚀刻阻挡层上的第二透明导电氧化物层。
所述衬底基板包括显示区与位于显示区周边的外围区；所述透明OLED显示器还包括：设于平坦层上且位于外围区的接线端子，所述接线端子包括设于平坦层上的第二透明导电氧化物层。
所述第一透明导电氧化物层与第二透明导电氧化物层均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡；所述阳极金属层的材料包括银；所述第一透明导电氧化物层与第二透明导电氧化物层的厚度均为
Figure PCTCN2017113672-appb-000004
所述阳极金属层的厚度为
Figure PCTCN2017113672-appb-000005
所述透明金属氧化物半导体材料包括铟镓锌氧化物、铟锌锡氧化物、及铟镓锌锡氧化物中的一种或多种；所述有源层与第一储存电容电极的厚度为
Figure PCTCN2017113672-appb-000006
本发明还提供一种透明OLED显示器的制作方法，采用透明金属氧化物半导体材料制备第一储存电容电极，采用透明导电氧化物材料制备第二储存电容电极，所述第二储存电容电极与第一储存电容电极共同构成储存电容；
其中，具体包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成栅极，在所述衬底基板上形成覆盖所述栅极的栅极绝缘层；
步骤S2、在所述栅极绝缘层上形成对应于栅极上方的有源层以及与有源层间隔设置的第一储存电容电极；所述有源层与第一储存电容电极均由透明金属氧化物半导体材料制备；
步骤S3、在所述栅极绝缘层上形成覆盖有源层与第一储存电容电极的蚀刻阻挡层，并在蚀刻阻挡层上形成对应于有源层两端的第一通孔与第二通孔；
步骤S4、在所述蚀刻阻挡层上形成源极与漏极，所述源极与漏极分别经由第一通孔与第二通孔和有源层的两端相接触；
步骤S5、在所述蚀刻阻挡层上形成覆盖所述源极与漏极的钝化层，并在钝化层上形成对应于第一储存电容电极上方的第三通孔以及对应于漏极上方的第一过孔；
在所述钝化层上形成平坦层，在平坦层上形成对应于第一过孔上方的第二过孔，所述第一过孔与第二过孔共同构成第四通孔，同时在平坦层上位于第三通孔的区域内形成第五通孔；
步骤S6、在所述平坦层上从下至上依次沉积第一透明导电氧化物层与阳极金属层，对所述第一透明导电氧化物层与阳极金属层进行图形化处理，得到阳极预定图案；
在所述阳极预定图案、平坦层、及蚀刻阻挡层上沉积第二透明导电氧化物层，对第二透明导电氧化物层进行图形化处理，得到位于平坦层上且对应于所述阳极预定图案的阳极以及位于所述第五通孔底部的蚀刻阻挡层 上的第二储存电容电极；
所述阳极包括在所述平坦层上从下至上依次层叠设置的第一透明导电氧化物层、阳极金属层、及第二透明导电氧化物层，所述第二储存电容电极包括设于所述蚀刻阻挡层上的第二透明导电氧化物层；
所述阳极经由第四通孔与漏极相接触，所述第二储存电容电极与第一储存电容电极共同构成储存电容；
步骤S7、在所述阳极、第二储存电容电极、及平坦层上形成像素定义层，在所述像素定义层上形成对应于所述阳极上方的开口；
在所述开口内的阳极上形成OLED发光层，在所述OLED发光层与像素定义层上形成覆盖所述OLED发光层的阴极；
其中，所述衬底基板包括显示区与位于显示区周边的外围区；所述步骤S6中，对第二透明导电氧化物层进行图形化处理后，在得到阳极与第二储存电容电极的同时，还得到位于平坦层上且位于外围区的接线端子，所述接线端子包括设于平坦层上的第二透明导电氧化物层；
其中，所述第一透明导电氧化物层与第二透明导电氧化物层均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡；所述阳极金属层的材料包括银；所述第一透明导电氧化物层与第二透明导电氧化物层的厚度均为
Figure PCTCN2017113672-appb-000007
所述阳极金属层的厚度为
Figure PCTCN2017113672-appb-000008
其中，所述有源层与第一储存电容电极的制备方法包括：在所述栅极绝缘层上沉积透明金属氧化物半导体材料，利用光刻制程对所述透明金属氧化物半导体材料进行图形化处理后，得到有源层与第一储存电容电极；所述透明金属氧化物半导体材料包括铟镓锌氧化物、铟锌锡氧化物、及铟镓锌锡氧化物中的一种或多种；所述有源层与第一储存电容电极的厚度为
Figure PCTCN2017113672-appb-000009
本发明的有益效果：本发明的透明OLED显示器的制作方法将有源层与第一储存电容电极在同一制程中形成，使第一储存电容电极由透明金属氧化物半导体材料制备，并通过两道光刻制程来制作阳极和第二储存电容电极，使第二储存电容电极仅由透明导电氧化物材料制备，从而使所述第一储存电容电极与第二储存电容电极所在的储存电容区呈现为透明区域，提高透明OLED显示器的光透过率，提升透明OLED显示器的透明显示效果。进一步的，在制作阳极和第二储存电容电极的同时，形成位于外围区的接线端子，使接线端子仅由透明导电氧化物材料制备，防止其被外界水氧腐蚀，提升其电学性能与使用寿命，进而提升透明OLED显示器的使用寿命。本发明的透明OLED显示器采用上述方法制得，具有较高的光透过 率与较好的透明显示效果，且具有较长的使用寿命。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种透明OLED显示器的剖视示意图；
图2为图1的透明OLED显示器的子像素区域的平面结构示意图；
图3为本发明的透明OLED显示器的制作方法的流程图；
图4为本发明的透明OLED显示器的制作方法的步骤S1的示意图；
图5为本发明的透明OLED显示器的制作方法的步骤S2的示意图；
图6为本发明的透明OLED显示器的制作方法的步骤S3的示意图；
图7为本发明的透明OLED显示器的制作方法的步骤S4的示意图；
图8为本发明的透明OLED显示器的制作方法的步骤S5的示意图；
图9与图10为本发明的透明OLED显示器的制作方法的步骤S6的示意图；
图11为本发明的透明OLED显示器的制作方法的步骤S7的示意图及本发明的透明OLED显示器的剖视示意图；
图12为本发明的透明OLED显示器的子像素区域的平面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明提供一种透明OLED显示器的制作方法，包括如下步骤：
步骤S1、如图4所示，提供衬底基板10，在所述衬底基板10上形成栅极20，在所述衬底基板10上形成覆盖所述栅极20的栅极绝缘层30。
具体的，所述衬底基板10包括显示区与位于显示区周边的外围区。
具体的，所述栅极20的制备方法包括：在所述衬底基板10上沉积栅极金属材料，利用光刻制程对所述栅极金属材料进行图形化处理后，得到栅极20。
具体的，所述栅极20包括在所述衬底基板10上从下至上依次层叠设置的第一栅极金属层与第二栅极金属层，所述第一栅极金属层的材料为钼(Mo)、钛(Ti)、或者钼钛合金，所述第二栅极金属层的材料为铜(Cu)。
具体的，所述栅极20的厚度为
Figure PCTCN2017113672-appb-000010
具体的，所述栅极绝缘层30包括氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述栅极绝缘层30的厚度为
Figure PCTCN2017113672-appb-000011
步骤S2、如图5所示，在所述栅极绝缘层30上形成对应于栅极20上方的有源层40以及与有源层40间隔设置的第一储存电容电极41；所述有源层40与第一储存电容电极41均由透明金属氧化物半导体材料制备。
具体的，所述有源层40与第一储存电容电极41的制备方法包括：在所述栅极绝缘层30上沉积透明金属氧化物半导体材料，利用光刻制程对所述透明金属氧化物半导体材料进行图形化处理后，得到有源层40与第一储存电容电极41。
具体的，所述透明金属氧化物半导体材料包括铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)、及铟镓锌锡氧化物(IGZTO)中的一种或多种。
具体的，所述有源层40与第一储存电容电极41的厚度为
Figure PCTCN2017113672-appb-000012
步骤S3、如图6所示，在所述栅极绝缘层30上形成覆盖有源层40与第一储存电容电极41的蚀刻阻挡层50，并在蚀刻阻挡层50上形成对应于有源层40两端的第一通孔51与第二通孔52。
具体的，所述蚀刻阻挡层50包括氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述蚀刻阻挡层50的厚度为
Figure PCTCN2017113672-appb-000013
步骤S4、如图7所示，在所述蚀刻阻挡层50上形成源极61与漏极62，所述源极61与漏极62分别经由第一通孔51与第二通孔52和有源层40的两端相接触。
具体的，所述源极61与漏极62的制备方法为：在所述蚀刻阻挡层50上沉积源漏极金属材料，利用光刻制程对源漏极金属材料进行图形化处理后，得到源极61与漏极62。
具体的，所述源极61与漏极62包括在所述蚀刻阻挡层50上从下至上依次层叠设置的第一源漏极金属层与第二源漏极金属层，所述第一源漏极金属层的材料为钼(Mo)、钛(Ti)、或者钼钛合金，所述第二源漏极金属层的材料为铜(Cu)。
具体的，所述源极61与漏极62的厚度为
Figure PCTCN2017113672-appb-000014
步骤S5、如图8所示，在所述蚀刻阻挡层50上形成覆盖所述源极61与漏极62的钝化层70，并在钝化层70上形成对应于第一储存电容电极41上方的第三通孔73以及对应于漏极62上方的第一过孔841；
在所述钝化层70上形成平坦层80，在平坦层80上形成对应于第一过孔841上方的第二过孔842，所述第一过孔841与第二过孔842共同构成第四通孔84，同时在平坦层80上位于第三通孔73的区域内形成第五通孔85。
具体的，所述钝化层70包括氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述钝化层70的厚度为
Figure PCTCN2017113672-appb-000015
具体的，所述平坦层80的材料为光阻材料，所述光阻材料的具体成分不限。
具体的，所述平坦层80的厚度为
Figure PCTCN2017113672-appb-000016
步骤S6、如图9与图10所示，在所述平坦层80上从下至上依次沉积第一透明导电氧化物层911与阳极金属层912，对所述第一透明导电氧化物层911与阳极金属层912进行图形化处理，得到阳极预定图案901；
在所述阳极预定图案901、平坦层80、及蚀刻阻挡层50上沉积第二透明导电氧化物层913，对第二透明导电氧化物层913进行图形化处理，得到位于平坦层80上且对应于所述阳极预定图案901的阳极91以及位于所述第五通孔85底部的蚀刻阻挡层50上的第二储存电容电极92；
所述阳极91包括在所述平坦层80上从下至上依次层叠设置的第一透明导电氧化物层911、阳极金属层912、及第二透明导电氧化物层913，所述第二储存电容电极92包括设于所述蚀刻阻挡层50上的第二透明导电氧化物层913；
所述阳极91经由第四通孔84与漏极62相接触，所述第二储存电容电极92与第一储存电容电极41共同构成储存电容。
优选的，所述步骤S6中，对第二透明导电氧化物层913进行图形化处理后，在得到阳极91与第二储存电容电极92的同时，还得到位于平坦层80上且位于外围区的接线端子93，所述接线端子93包括设于平坦层80上的第二透明导电氧化物层913。
所述接线端子93用于与驱动IC相连，将驱动IC中的电信号传输至数据线与栅极线中。由于接线端子93仅由第二透明导电氧化物层913构成，与现有的由两层氧化铟锡(ITO)薄膜夹设一层银薄膜构成的接线端子相比，本发明的接线端子93不含金属银，因此不容易被水氧腐蚀，具有较好的电学性能及较长的使用寿命。
所述第二储存电容电极92与第一储存电容电极41之间仅设有蚀刻阻挡层50，即储存电容的两极板之间的绝缘层的厚度较小，因此可以获得较大的储存电容，提升液晶显示器的显示效果。
具体的，所述第一透明导电氧化物层911与第二透明导电氧化物层913均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡(ITO)；所述阳极金属层912的材料包括银(Ag)。
具体的，所述第一透明导电氧化物层911与第二透明导电氧化物层913的厚度均为
Figure PCTCN2017113672-appb-000017
所述阳极金属层912的厚度为
Figure PCTCN2017113672-appb-000018
步骤S7、如图11所示，在所述阳极91、第二储存电容电极92、及平坦层80上形成像素定义层94，在所述像素定义层94上形成对应于所述阳极91上方的开口941；
在所述开口941内的阳极91上形成OLED发光层95，在所述OLED发光层95与像素定义层94上形成覆盖所述OLED发光层95的阴极96。
具体的，所述像素定义层94的材料为光阻材料，所述光阻材料的具体成分不限。
具体的，所述像素定义层94的厚度为
Figure PCTCN2017113672-appb-000019
具体的，所述OLED发光层95采用蒸镀法或者喷墨打印(IJP)法制备。
具体的，所述阴极96为透明电极，使由阳极91、OLED发光层95、及阴极96构成的OLED器件实现顶发光。
优选的，所述阴极96的材料为氧化铟锡(ITO)。
具体的，如图12所示，本发明制得的透明OLED显示器包括显示区与位于显示区周边的外围区，所述接线端子93位于所述外围区内，所述显示区内设有多个子像素区域，每个子像素区域包括不透明的TFT区、透明的储存电容(Cst)区、以及除TFT区与储存电容区以外的透明区，所述栅极20、有源层40、源极61、漏极62、阳极91、OLED发光层95、及阴极96位于TFT区内，所述第一储存电容电极41与第二储存电容电极92位于储存电容区内，与现有技术相比，本发明将储存电容区设置为透明区，能够提高20％左右的光透过率，提升透明OLED显示器的透明显示效果。
本发明的透明OLED显示器的制作方法将有源层40与第一储存电容电极41在同一制程中形成，使第一储存电容电极41由透明金属氧化物半导体材料制备，并通过两道光刻制程来制作阳极91和第二储存电容电极92，使第二储存电容电极92仅由透明导电氧化物材料制备，从而使所述第一储存电容电极41与第二储存电容电极92所在的储存电容区呈现为透明区域， 提高透明OLED显示器的光透过率，提升透明OLED显示器的透明显示效果。进一步的，在制作阳极91和第二储存电容电极92的同时，形成位于外围区的接线端子93，使接线端子93仅由透明导电氧化物材料制备，防止其被外界水氧腐蚀，提升其电学性能与使用寿命，进而提升透明OLED显示器的使用寿命。
请参阅图11与图12，基于上述透明OLED显示器的制作方法，本发明还提供一种透明OLED显示器，包括：衬底基板10、设于衬底基板10上的栅极20、设于衬底基板10上且覆盖栅极20的栅极绝缘层30、设于栅极绝缘层30上且对应于栅极20上方的有源层40、设于栅极绝缘层30上且与有源层40间隔设置的第一储存电容电极41、设于栅极绝缘层30上且覆盖有源层40与第一储存电容电极41的蚀刻阻挡层50、设于蚀刻阻挡层50上的源极61与漏极62、设于蚀刻阻挡层50上且覆盖所述源极61与漏极62的钝化层70、设于钝化层70上的平坦层80、设于平坦层80上的阳极91、设于蚀刻阻挡层50与平坦层80上且对应于第一储存电容电极41上方的第二储存电容电极92、设于阳极91、第二储存电容电极92、及平坦层80上的像素定义层94、设于像素定义层94上且对应于阳极91上方的开口941、设于开口941内且位于阳极91上的OLED发光层95、以及设于所述OLED发光层95与像素定义层94上且覆盖所述OLED发光层95的阴极96。
所述蚀刻阻挡层50上设有对应于有源层40两端的第一通孔51与第二通孔52，所述钝化层70上设有对应于第一储存电容电极41上方的第三通孔73，所述平坦层80与钝化层70上设有对应于漏极62上方的第四通孔84，所述平坦层80上位于第三通孔73的区域内设有第五通孔85；
所述源极61与漏极62分别经由第一通孔51与第二通孔52和有源层40的两端相接触；所述阳极91经由第四通孔84与漏极62相接触，所述第二储存电容电极92设于第五通孔85底部的蚀刻阻挡层50上；所述第二储存电容电极92与第一储存电容电极41共同构成储存电容；
所述有源层40与第一储存电容电极41均由透明金属氧化物半导体材料制备；所述阳极91包括在平坦层80上从下至上依次层叠设置的第一透明导电氧化物层911、阳极金属层912、及第二透明导电氧化物层913，所述第二储存电容电极92包括设于蚀刻阻挡层50与平坦层80上的第二透明导电氧化物层913。
具体的，所述衬底基板10包括显示区与位于显示区周边的外围区。
具体的，所述栅极20包括在所述衬底基板10上从下至上依次层叠设置的第一栅极金属层与第二栅极金属层，所述第一栅极金属层的材料为钼 (Mo)、钛(Ti)、或者钼钛合金，所述第二栅极金属层的材料为铜(Cu)。
具体的，所述栅极20的厚度为
Figure PCTCN2017113672-appb-000020
具体的，所述栅极绝缘层30包括氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述栅极绝缘层30的厚度为
Figure PCTCN2017113672-appb-000021
具体的，所述透明金属氧化物半导体材料包括铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)、及铟镓锌锡氧化物(IGZTO)中的一种或多种。
具体的，所述有源层40与第一储存电容电极41的厚度为
Figure PCTCN2017113672-appb-000022
具体的，所述蚀刻阻挡层50包括氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述蚀刻阻挡层50的厚度为
Figure PCTCN2017113672-appb-000023
具体的，所述源极61与漏极62包括在所述蚀刻阻挡层50上从下至上依次层叠设置的第一源漏极金属层与第二源漏极金属层，所述第一源漏极金属层的材料为钼(Mo)、钛(Ti)、或者钼钛合金，所述第二源漏极金属层的材料为铜(Cu)。
具体的，所述源极61与漏极62的厚度为
Figure PCTCN2017113672-appb-000024
具体的，所述钝化层70包括氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述钝化层70的厚度为
Figure PCTCN2017113672-appb-000025
具体的，所述平坦层80的材料为光阻材料，所述光阻材料的具体成分不限。
具体的，所述平坦层80的厚度为
Figure PCTCN2017113672-appb-000026
具体的，所述透明OLED显示器还包括：设于平坦层80上且位于外围区的接线端子93，所述接线端子93包括设于平坦层80上的第二透明导电氧化物层913。
具体的，所述第一透明导电氧化物层911与第二透明导电氧化物层913均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡(ITO)；所述阳极金属层912的材料包括银(Ag)。
具体的，所述第一透明导电氧化物层911与第二透明导电氧化物层913的厚度均为
Figure PCTCN2017113672-appb-000027
所述阳极金属层912的厚度为
Figure PCTCN2017113672-appb-000028
具体的，所述像素定义层94的材料为光阻材料，所述光阻材料的具体成分不限。
具体的，所述像素定义层94的厚度为
Figure PCTCN2017113672-appb-000029
具体的，所述阴极96为透明电极，使由阳极91、OLED发光层95、 及阴极96构成的OLED器件实现顶发光。
优选的，所述阴极96的材料为氧化铟锡(ITO)。
本发明的透明OLED显示器包括由透明金属氧化物半导体材料制备的第一储存电容电极41以及由透明导电氧化物材料制备的第二储存电容电极92，所述第一储存电容电极41与第二储存电容电极92所在的储存电容区呈现为透明区，因此本发明的透明OLED显示器具有较高的光透过率与较好的透明显示效果；并且，位于透明OLED显示器的外围区的接线端子93由透明导电氧化物材料制备，不容易被外界水氧腐蚀，具有较好的电学性能与较长的使用寿命，使得本发明的透明OLED显示器具有较长的使用寿命。
综上所述，本发明提供一种透明OLED显示器及其制作方法。本发明的透明OLED显示器的制作方法将有源层与第一储存电容电极在同一制程中形成，使第一储存电容电极由透明金属氧化物半导体材料制备，并通过两道光刻制程来制作阳极和第二储存电容电极，使第二储存电容电极仅由透明导电氧化物材料制备，从而使所述第一储存电容电极与第二储存电容电极所在的储存电容区呈现为透明区域，提高透明OLED显示器的光透过率，提升透明OLED显示器的透明显示效果。进一步的，在制作阳极和第二储存电容电极的同时，形成位于外围区的接线端子，使接线端子仅由透明导电氧化物材料制备，防止其被外界水氧腐蚀，提升其电学性能与使用寿命，进而提升透明OLED显示器的使用寿命。本发明的透明OLED显示器采用上述方法制得，具有较高的光透过率与较好的透明显示效果，且具有较长的使用寿命。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种透明OLED显示器的制作方法，采用透明金属氧化物半导体材料制备第一储存电容电极，采用透明导电氧化物材料制备第二储存电容电极，所述第二储存电容电极与第一储存电容电极共同构成储存电容。
  2. 如权利要求1所述的透明OLED显示器的制作方法，其中，具体包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成栅极，在所述衬底基板上形成覆盖所述栅极的栅极绝缘层；
    步骤S2、在所述栅极绝缘层上形成对应于栅极上方的有源层以及与有源层间隔设置的第一储存电容电极；所述有源层与第一储存电容电极均由透明金属氧化物半导体材料制备；
    步骤S3、在所述栅极绝缘层上形成覆盖有源层与第一储存电容电极的蚀刻阻挡层，并在蚀刻阻挡层上形成对应于有源层两端的第一通孔与第二通孔；
    步骤S4、在所述蚀刻阻挡层上形成源极与漏极，所述源极与漏极分别经由第一通孔与第二通孔和有源层的两端相接触；
    步骤S5、在所述蚀刻阻挡层上形成覆盖所述源极与漏极的钝化层，并在钝化层上形成对应于第一储存电容电极上方的第三通孔以及对应于漏极上方的第一过孔；
    在所述钝化层上形成平坦层，在平坦层上形成对应于第一过孔上方的第二过孔，所述第一过孔与第二过孔共同构成第四通孔，同时在平坦层上位于第三通孔的区域内形成第五通孔；
    步骤S6、在所述平坦层上从下至上依次沉积第一透明导电氧化物层与阳极金属层，对所述第一透明导电氧化物层与阳极金属层进行图形化处理，得到阳极预定图案；
    在所述阳极预定图案、平坦层、及蚀刻阻挡层上沉积第二透明导电氧化物层，对第二透明导电氧化物层进行图形化处理，得到位于平坦层上且对应于所述阳极预定图案的阳极以及位于所述第五通孔底部的蚀刻阻挡层上的第二储存电容电极；
    所述阳极包括在所述平坦层上从下至上依次层叠设置的第一透明导电氧化物层、阳极金属层、及第二透明导电氧化物层，所述第二储存电容电极包括设于所述蚀刻阻挡层上的第二透明导电氧化物层；
    所述阳极经由第四通孔与漏极相接触，所述第二储存电容电极与第一储存电容电极共同构成储存电容；
    步骤S7、在所述阳极、第二储存电容电极、及平坦层上形成像素定义层，在所述像素定义层上形成对应于所述阳极上方的开口；
    在所述开口内的阳极上形成OLED发光层，在所述OLED发光层与像素定义层上形成覆盖所述OLED发光层的阴极。
  3. 如权利要求2所述的透明OLED显示器的制作方法，其中，所述衬底基板包括显示区与位于显示区周边的外围区；所述步骤S6中，对第二透明导电氧化物层进行图形化处理后，在得到阳极与第二储存电容电极的同时，还得到位于平坦层上且位于外围区的接线端子，所述接线端子包括设于平坦层上的第二透明导电氧化物层。
  4. 如权利要求2所述的透明OLED显示器的制作方法，其中，所述第一透明导电氧化物层与第二透明导电氧化物层均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡；所述阳极金属层的材料包括银；所述第一透明导电氧化物层与第二透明导电氧化物层的厚度均为
    Figure PCTCN2017113672-appb-100001
    所述阳极金属层的厚度为
    Figure PCTCN2017113672-appb-100002
  5. 如权利要求2所述的透明OLED显示器的制作方法，其中，所述有源层与第一储存电容电极的制备方法包括：在所述栅极绝缘层上沉积透明金属氧化物半导体材料，利用光刻制程对所述透明金属氧化物半导体材料进行图形化处理后，得到有源层与第一储存电容电极；所述透明金属氧化物半导体材料包括铟镓锌氧化物、铟锌锡氧化物、及铟镓锌锡氧化物中的一种或多种；所述有源层与第一储存电容电极的厚度为
    Figure PCTCN2017113672-appb-100003
  6. 一种透明OLED显示器，包括：由透明金属氧化物半导体材料制备的第一储存电容电极、以及由透明导电氧化物材料制备的第二储存电容电极；所述第二储存电容电极与第一储存电容电极共同构成储存电容。
  7. 如权利要求6所述的透明OLED显示器，其中，具体包括：衬底基板、设于衬底基板上的栅极、设于衬底基板上且覆盖栅极的栅极绝缘层、设于栅极绝缘层上且对应于栅极上方的有源层、设于栅极绝缘层上且与有源层间隔设置的第一储存电容电极、设于栅极绝缘层上且覆盖有源层与第一储存电容电极的蚀刻阻挡层、设于蚀刻阻挡层上的源极与漏极、设于蚀刻阻挡层上且覆盖源极与漏极的钝化层、设于钝化层上的平坦层、设于平坦层上的阳极、设于蚀刻阻挡层上且对应于第一储存电容电极上方的第二储存电容电极、设于阳极、第二储存电容电极、及平坦层上的像素定义层、设于像素定义层上且对应于阳极上方的开口、设于开口内且位于阳极上的 OLED发光层、以及设于OLED发光层与像素定义层上且覆盖OLED发光层的阴极；
    所述蚀刻阻挡层上设有对应于有源层两端的第一通孔与第二通孔，所述钝化层上设有对应于第一储存电容电极上方的第三通孔，所述平坦层与钝化层上设有对应于漏极上方的第四通孔，所述平坦层上位于第三通孔的区域内设有第五通孔；
    所述源极与漏极分别经由第一通孔与第二通孔和有源层的两端相接触；所述阳极经由第四通孔与漏极相接触，所述第二储存电容电极设于第五通孔底部的蚀刻阻挡层上；所述第二储存电容电极与第一储存电容电极共同构成储存电容；
    所述有源层与第一储存电容电极均由透明金属氧化物半导体材料制备；所述阳极包括在平坦层上从下至上依次层叠设置的第一透明导电氧化物层、阳极金属层、及第二透明导电氧化物层，所述第二储存电容电极包括设于蚀刻阻挡层上的第二透明导电氧化物层。
  8. 如权利要求7所述的透明OLED显示器，其中，所述衬底基板包括显示区与位于显示区周边的外围区；所述透明OLED显示器还包括：设于平坦层上且位于外围区的接线端子，所述接线端子包括设于平坦层上的第二透明导电氧化物层。
  9. 如权利要求7所述的透明OLED显示器，其中，所述第一透明导电氧化物层与第二透明导电氧化物层均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡；所述阳极金属层的材料包括银；所述第一透明导电氧化物层与第二透明导电氧化物层的厚度均为
    Figure PCTCN2017113672-appb-100004
    所述阳极金属层的厚度为
    Figure PCTCN2017113672-appb-100005
  10. 如权利要求7所述的透明OLED显示器，其中，所述透明金属氧化物半导体材料包括铟镓锌氧化物、铟锌锡氧化物、及铟镓锌锡氧化物中的一种或多种；所述有源层与第一储存电容电极的厚度为
    Figure PCTCN2017113672-appb-100006
  11. 一种透明OLED显示器的制作方法，采用透明金属氧化物半导体材料制备第一储存电容电极，采用透明导电氧化物材料制备第二储存电容电极，所述第二储存电容电极与第一储存电容电极共同构成储存电容；
    其中，具体包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成栅极，在所述衬底基板上形成覆盖所述栅极的栅极绝缘层；
    步骤S2、在所述栅极绝缘层上形成对应于栅极上方的有源层以及与有源层间隔设置的第一储存电容电极；所述有源层与第一储存电容电极均由 透明金属氧化物半导体材料制备；
    步骤S3、在所述栅极绝缘层上形成覆盖有源层与第一储存电容电极的蚀刻阻挡层，并在蚀刻阻挡层上形成对应于有源层两端的第一通孔与第二通孔；
    步骤S4、在所述蚀刻阻挡层上形成源极与漏极，所述源极与漏极分别经由第一通孔与第二通孔和有源层的两端相接触；
    步骤S5、在所述蚀刻阻挡层上形成覆盖所述源极与漏极的钝化层，并在钝化层上形成对应于第一储存电容电极上方的第三通孔以及对应于漏极上方的第一过孔；
    在所述钝化层上形成平坦层，在平坦层上形成对应于第一过孔上方的第二过孔，所述第一过孔与第二过孔共同构成第四通孔，同时在平坦层上位于第三通孔的区域内形成第五通孔；
    步骤S6、在所述平坦层上从下至上依次沉积第一透明导电氧化物层与阳极金属层，对所述第一透明导电氧化物层与阳极金属层进行图形化处理，得到阳极预定图案；
    在所述阳极预定图案、平坦层、及蚀刻阻挡层上沉积第二透明导电氧化物层，对第二透明导电氧化物层进行图形化处理，得到位于平坦层上且对应于所述阳极预定图案的阳极以及位于所述第五通孔底部的蚀刻阻挡层上的第二储存电容电极；
    所述阳极包括在所述平坦层上从下至上依次层叠设置的第一透明导电氧化物层、阳极金属层、及第二透明导电氧化物层，所述第二储存电容电极包括设于所述蚀刻阻挡层上的第二透明导电氧化物层；
    所述阳极经由第四通孔与漏极相接触，所述第二储存电容电极与第一储存电容电极共同构成储存电容；
    步骤S7、在所述阳极、第二储存电容电极、及平坦层上形成像素定义层，在所述像素定义层上形成对应于所述阳极上方的开口；
    在所述开口内的阳极上形成OLED发光层，在所述OLED发光层与像素定义层上形成覆盖所述OLED发光层的阴极；
    其中，所述衬底基板包括显示区与位于显示区周边的外围区；所述步骤S6中，对第二透明导电氧化物层进行图形化处理后，在得到阳极与第二储存电容电极的同时，还得到位于平坦层上且位于外围区的接线端子，所述接线端子包括设于平坦层上的第二透明导电氧化物层；
    其中，所述第一透明导电氧化物层与第二透明导电氧化物层均由透明导电氧化物材料制备，所述透明导电氧化物材料包括氧化铟锡；所述阳极 金属层的材料包括银；所述第一透明导电氧化物层与第二透明导电氧化物层的厚度均为
    Figure PCTCN2017113672-appb-100007
    所述阳极金属层的厚度为
    Figure PCTCN2017113672-appb-100008
    其中，所述有源层与第一储存电容电极的制备方法包括：在所述栅极绝缘层上沉积透明金属氧化物半导体材料，利用光刻制程对所述透明金属氧化物半导体材料进行图形化处理后，得到有源层与第一储存电容电极；所述透明金属氧化物半导体材料包括铟镓锌氧化物、铟锌锡氧化物、及铟镓锌锡氧化物中的一种或多种；所述有源层与第一储存电容电极的厚度为
    Figure PCTCN2017113672-appb-100009
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