WO2019078024A1 - 封止用樹脂組成物および半導体装置 - Google Patents

封止用樹脂組成物および半導体装置 Download PDF

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Publication number
WO2019078024A1
WO2019078024A1 PCT/JP2018/037240 JP2018037240W WO2019078024A1 WO 2019078024 A1 WO2019078024 A1 WO 2019078024A1 JP 2018037240 W JP2018037240 W JP 2018037240W WO 2019078024 A1 WO2019078024 A1 WO 2019078024A1
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Prior art keywords
resin composition
sealing
sealing resin
mass
semiconductor device
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PCT/JP2018/037240
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English (en)
French (fr)
Japanese (ja)
Inventor
洋史 黒田
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住友ベークライト株式会社
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Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to KR1020207013624A priority Critical patent/KR102166183B1/ko
Priority to CN201880067422.7A priority patent/CN111247206A/zh
Priority to JP2019525037A priority patent/JP6628010B2/ja
Publication of WO2019078024A1 publication Critical patent/WO2019078024A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a sealing resin composition and a semiconductor device.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2007-161990 describes a technique for improving the electrical characteristics of a semiconductor package.
  • the same document describes a sealing epoxy resin molding material containing an epoxy resin, a curing agent, and a colorant resin mixture prepared by mixing a resin and a colorant having a specific electric resistance in a specific range in advance.
  • an epoxy resin molding material for sealing has good flowability, curability and colorability, and even when used as a sealing material in an electronic component device in which the distance between pads or between wires is narrow. It is supposed that an electronic component device having excellent electrical characteristics can be obtained.
  • the content of S in the cured product of the sealing resin composition obtained by measuring a test piece obtained by the following production method by the following method is 10 ppm or less based on the entire cured product And a sealing resin composition.
  • sample preparation method Using a transfer molding machine, a molded article with a diameter of 50 mm and a thickness of 3 mm is molded at a mold temperature of 175 ° C, an injection pressure of 7.4MPa, and a curing time of 2 minutes, and post cured at 175 ° C for 4 hours
  • the sample is obtained in the form of (Method of measuring the content of S)
  • the sulfur concentration in the sample is measured under the conditions of a tube voltage of 40 kV and a tube current of 95 mA using a wavelength dispersive fluorescent X-ray analyzer (XRF-1800 manufactured by Shimadzu Corporation).
  • the semiconductor device formed by sealing a semiconductor element with the resin composition for sealing in the said invention is provided.
  • the present invention even when applied to a semiconductor device containing a Cu wire, it is possible to obtain a semiconductor device which is excellent in HTSL characteristics of the obtained semiconductor device and excellent in laser sealability.
  • the sealing resin composition contains the following components (A) to (C).
  • the resin composition for sealing obtained by measuring the test piece obtained by the following manufacturing method by the following method
  • the content of S (sulfur) in the cured product is 10 ppm or less based on the entire cured product.
  • sample preparation method Using a transfer molding machine, a molded article with a diameter of 50 mm and a thickness of 3 mm is molded at a mold temperature of 175 ° C, an injection pressure of 7.4MPa, and a curing time of 2 minutes, and post cured at 175 ° C for 4 hours
  • the sample is obtained in the form of (Method of measuring the content of S)
  • the sulfur concentration in the above sample is measured under the conditions of a tube voltage of 40 kV and a tube current of 95 mA using a wavelength dispersive fluorescent X-ray analyzer (XRF-1800 manufactured by Shimadzu Corporation).
  • the components (A) to (C) are used in combination in the sealing resin composition, and the content of S in the cured product of the sealing resin composition is the above-mentioned specific range and Do.
  • the sealing resin composition is, for example, in the form of particles or a sheet. Specifically as a particulate-form resin composition for sealing, the thing of tablet-form or a granular material is mentioned. Among these, when the resin composition for sealing is tablet-like, for example, the resin composition for sealing can be shape
  • the substrate is, for example, a wiring board such as an interposer or a lead frame. In addition, the semiconductor element is electrically connected to the base material by wire bonding or flip chip connection.
  • the semiconductor device obtained by sealing the semiconductor element by sealing using the sealing resin composition is not limited, for example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball (Ball) Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Flame BGA), and the like.
  • the sealing resin composition is also applicable to a structure formed by MAP (Mold Array Package) molding, which is frequently applied to molding of these packages in recent years. In this case, a package can be obtained by collectively sealing a plurality of semiconductor elements mounted on a base material using a sealing resin composition.
  • the semiconductor element examples include, but are not limited to, integrated circuits, large scale integrated circuits, transistors, thyristors, diodes, solid-state imaging elements, and the like.
  • the semiconductor element to be sealed with the sealing resin composition is a so-called element that does not involve light entering and leaving, except for the light semiconductor element such as the light receiving element and the light emitting element (light emitting diode etc.).
  • the content of S in the cured product of the sealing resin composition is the entire cured product from the viewpoint of obtaining a semiconductor device having excellent HTSL characteristics and laser sealability even when used with a Cu wire.
  • it is 10 ppm or less, preferably 9 ppm or less, more preferably 8.5 ppm or less, and still more preferably 7.5 ppm.
  • the lower limit value of the content of S in the cured product is 0 ppm or more, but may be, for example, the detection limit value or more, and specifically 1 ppm or more.
  • the glass transition temperature (Tg) of the cured product of the sealing resin composition is preferably 110 ° C. or higher, more preferably 115 ° C. or higher, from the viewpoint of improving the heat resistance of the cured product. Preferably it is 125 ° C. or more, more preferably 135 ° C. or more.
  • the upper limit of the glass transition temperature of the cured product is not limited, but from the viewpoint of improving the toughness of the cured product, it is preferably 230 ° C. or less, more preferably 200 ° C. or less, and still more preferably 180 ° C. or less.
  • the glass transition temperature of the cured product is a measurement temperature range of 0 ° C. to 320 ° C.
  • TMA thermal mechanical analysis
  • the sealing resin composition contains the components (A) to (C).
  • constituent components of the sealing resin composition will be described.
  • the epoxy resin of the component (A) for example, biphenyl type epoxy resin; bisphenol type epoxy resin such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethyl bisphenol F type epoxy resin; stilbene type Epoxy resin; Novolak type epoxy resin such as phenol novolak type epoxy resin, cresol novolac type epoxy resin; Multifunctional epoxy resin such as triphenolmethane type epoxy resin, alkyl modified triphenolmethane type epoxy resin; consisting of phenylene skeleton and biphenylene skeleton A phenol aralkyl type epoxy resin having one or two skeletons selected from the group, one or two skeletons selected from the group consisting of a phenylene skeleton and a biphenylene skeleton Phenol aralkyl type epoxy resin such as naphthal aralkyl type epoxy resin; naphthol type epoxy resin such as epoxy resin obtained by glycidyl etherifying dihydroxy
  • the epoxy resin is preferably selected from the group consisting of phenylene skeleton-containing phenol aralkyl type epoxy resin, o-cresol novolac type epoxy resin and biphenyl type epoxy resin. One or two or more.
  • the content of the component (A) in the resin composition for sealing is 100% by mass of the entire resin composition for sealing from the viewpoint of obtaining suitable fluidity at the time of molding to improve the filling property and the moldability. When it is carried out, it is preferably 2% by mass or more, more preferably 3% by mass or more, and still more preferably 4% by mass or more.
  • the content of the component (A) in the resin composition for sealing is for sealing from the viewpoint of improving the HTSL characteristics of the semiconductor device provided with the sealing material formed using the resin composition for sealing.
  • the total amount of the resin composition is 100% by mass, preferably 40% by mass or less, more preferably 30% by mass or less, still more preferably 15% by mass or less, and still more preferably 10% by mass or less.
  • the inorganic filler of the component (B) one generally used in a resin composition for semiconductor encapsulation can be used.
  • the inorganic filler include silica such as fused silica and crystalline silica; alumina; talc; titanium oxide; silicon nitride; and aluminum nitride.
  • silica such as fused silica and crystalline silica
  • alumina such as fused silica and crystalline silica
  • talc titanium oxide
  • silicon nitride silicon nitride
  • aluminum nitride aluminum nitride.
  • One of these inorganic fillers may be used alone, or two or more thereof may be used in combination.
  • it is preferable to use silica and it is more preferable to use fused silica.
  • the shape of the silica is preferably spherical.
  • the content of the component (B) in the sealing resin composition improves the low hygroscopicity and the low thermal expansion of the sealing material formed using the sealing resin composition, and the moisture resistance of the obtained semiconductor device From the viewpoint of more effectively improving the reliability and the reflow resistance, the total amount of the sealing resin composition is 100% by mass, preferably 50% by mass or more, more preferably 70% by mass or more, and further preferably Is 80 mass% or more.
  • the content of the component (B) in the resin composition for sealing is more preferably the resin composition for sealing from the viewpoint of more effectively improving the flowability and the filling property at the time of molding of the resin composition for sealing. When the whole is 100 mass%, it is preferably 95 mass% or less, more preferably 93 mass% or less, and still more preferably 90 mass% or less.
  • Acetylene black, black titanium oxide (titanium black), etc. are mentioned as a specific example of the black-type coloring agent of a component (C).
  • black titanium oxide, Ti n O (2n-1 ) (n is a positive integer) are present as.
  • Examples of black titanium oxide Ti n O used in the present embodiment (2n-1) it is preferable to use a n is 4 to 6.
  • n is 4 or more, the dispersibility of black titanium oxide in the sealing resin composition can be improved.
  • the marking property of a laser such as a YAG laser can be improved.
  • Component (C) preferably contains acetylene black, and more preferably consists of acetylene black, from the viewpoint of obtaining a semiconductor device excellent in HTSL characteristics even when used together with a Cu wire.
  • the sealing resin composition Preferably, it is substantially free of furnace black, more preferably it contains acetylene black and is substantially free of furnace black.
  • the resin composition for sealing does not contain furnace black substantially means that furnace black is not intentionally blended with the resin composition for sealing.
  • the content of acetylene black in the resin composition for sealing is preferably 0.10% by mass or more with respect to the entire resin composition for sealing, from the viewpoint of obtaining a preferable appearance of the sealing material, and more preferably It is 0.20 mass% or more. Further, from the viewpoint of enhancing the insulation reliability of the semiconductor device, the content of acetylene black in the sealing resin composition is preferably 1.0 mass% or less with respect to the entire sealing resin composition, Preferably it is 0.8 mass% or less, More preferably, it is 0.6 mass% or less.
  • the content of the component (C) in the sealing resin composition is preferably 0.10 mass% or more with respect to the entire sealing resin composition from the viewpoint of obtaining a preferable appearance of the sealing material. Preferably it is 0.20 mass% or more. Further, from the viewpoint of enhancing the insulation reliability of the semiconductor device, the content of the component (C) in the sealing resin composition is preferably 1.0% by mass or less with respect to the entire sealing resin composition. More preferably, it is 0.8 mass% or less, More preferably, it is 0.6 mass% or less.
  • the average particle diameter d50 of secondary particles of acetylene black is preferably 1 ⁇ m or more, more preferably 3 ⁇ m or more, from the viewpoint of improving the laser sealability. Also, from the viewpoint of improving the laser sealability, the average particle diameter d50 of secondary particles of acetylene black is preferably 20 ⁇ m or less, more preferably 10 ⁇ m or less. Here, the average particle diameter d50 of secondary particles of acetylene black is measured by a laser diffraction method.
  • the sealing resin composition may contain components other than the epoxy resin and the inorganic filler.
  • the sealing resin composition may further contain a curing agent.
  • the curing agent can be roughly classified into, for example, three types of a polyaddition type curing agent, a catalyst type curing agent, and a condensation type curing agent, and one or more of these can be used.
  • polyaddition curing agent examples include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), Polyamine compounds containing dicyandiamide (DICY), organic acid dihydrazide, etc.
  • DETA diethylenetriamine
  • TETA triethylenetetramine
  • MXDA metaxylylenediamine
  • DDM diaminodiphenylmethane
  • MPDA m-phenylenediamine
  • DIY Polyamine compounds containing dicyandiamide
  • organic acid dihydrazide etc.
  • aromatic polyamines such as diaminodiphenyl sulfone (DDS); Alicyclic acids such as hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride (MTHPA)
  • Anhydrides such as anhydrides, aromatic anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA), etc .
  • tertiary amine compounds such as benzyldimethylamine (BDMA), 2,4,6-trisdimethylaminomethylphenol (DMP-30); 2-methylimidazole, 2-ethyl-4- And imidazole compounds such as methylimidazole (EMI 24); and Lewis acids such as BF3 complex.
  • BDMA benzyldimethylamine
  • DMP-30 2,4,6-trisdimethylaminomethylphenol
  • 2-methylimidazole, 2-ethyl-4- And imidazole compounds such as methylimidazole (EMI 24)
  • Lewis acids such as BF3 complex.
  • condensation type curing agents include phenol resins; urea resins such as methylol group-containing urea resins; and melamine resins such as methylol group-containing melamine resins.
  • a phenol resin curing agent is preferable.
  • curing agent the monomer which has 2 or more of phenolic hydroxyl groups in 1 molecule, an oligomer, and a polymer general can be used, The molecular weight and molecular structure are not limited.
  • novolac type phenol resin such as phenol novolac resin, cresol novolac resin, bisphenol novolac etc .
  • polyvinyl phenol polyfunctional type such as phenol / hydroxy benzaldehyde resin, triphenolmethane type phenol resin
  • Phenolic resin Modified phenolic resin such as terpene modified phenolic resin, dicyclopentadiene modified phenolic resin, etc .
  • bisphenol compounds such as bisphenol A, bisphenol F, etc.
  • a biphenylaralkyl type phenol resin when applied to a semiconductor device containing a Cu wire, from the viewpoint of obtaining a semiconductor device excellent in HTSL characteristics and laser sealability, a biphenylaralkyl type phenol resin, a novolac type phenol resin and a phenylene skeleton-containing phenol aralkyl resin It is more preferable to use one or more selected from the group consisting of
  • the combination of the component (A) and the phenol resin curing agent preferably a combination of biphenylaralkyl type epoxy resin / biphenylaralkyl type phenol resin, ortho cresol novolac type epoxy resin / novolac type phenol resin Combinations and combinations of biphenyl type epoxy resin / phenol aralkyl resin are mentioned.
  • the content of the curing agent in the resin composition for sealing realizes excellent flowability at the time of molding, and from the viewpoint of improving the filling property and the moldability, the resin composition for sealing Preferably it is 1 mass% or more with respect to the whole, More preferably, it is 2 mass% or more, More preferably, it is 3 mass% or more.
  • the content of the curing agent in the sealing resin composition is the sealing agent from the viewpoint of improving the moisture resistance and the reflow resistance.
  • it is 25 mass% or less with respect to the whole resin composition for stop, More preferably, it is 15 mass% or less, More preferably, it is 10 mass% or less.
  • the resin composition for sealing may contain components other than the components mentioned above, for example, a hardening accelerator, a coupling agent, a mold release agent, an ion capturing agent, a low stress component, a flame retardant, and an antioxidant Etc.
  • a hardening accelerator for example, a hardening accelerator, a coupling agent, a mold release agent, an ion capturing agent, a low stress component, a flame retardant, and an antioxidant Etc.
  • a hardening accelerator for example, a coupling agent, a mold release agent, an ion capturing agent, a low stress component, a flame retardant, and an antioxidant Etc.
  • a hardening accelerator for example, a coupling agent, a mold release agent, an ion capturing agent, a low stress component, a flame retardant, and an antioxidant Etc.
  • a hardening accelerator for example, a coupling agent, a mold release agent, an ion capturing agent, a low stress component,
  • the curing accelerator is, for example, a phosphorus atom-containing compound such as an organic phosphine, a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, an adduct of a phosphonium compound and a silane compound, etc.
  • a phosphorus atom-containing compound such as an organic phosphine, a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, an adduct of a phosphonium compound and a silane compound, etc.
  • nitrogen atom-containing compounds such as amidines and tertiary amines exemplified by undecene-7, benzyldimethylamine, 2-methylimidazole and the like, quaternary salts of amidines and
  • the curing accelerator more preferably contains triphenylphosphine.
  • the content of the curing accelerator in the sealing resin composition is preferably 0.01% by mass or more with respect to the entire sealing resin composition, from the viewpoint of enhancing the curing characteristics of the sealing resin composition. More preferably, it is 0.05 mass% or more, Preferably, it is 2.0 mass% or less, More preferably, it is 1.0 mass% or less.
  • Coupling agents include, for example, aminosilanes such as epoxysilane, mercaptosilane and phenylaminosilane, alkylsilanes, various silane compounds such as ureidosilane, vinylsilane and methacrylsilane, titanium compounds, aluminum chelates, aluminum / zirconium compounds, etc. And one or more selected from known coupling agents.
  • aminosilanes such as epoxysilane, mercaptosilane and phenylaminosilane
  • alkylsilanes various silane compounds such as ureidosilane, vinylsilane and methacrylsilane, titanium compounds, aluminum chelates, aluminum / zirconium compounds, etc.
  • silane compounds such as ureidosilane, vinylsilane and methacrylsilane
  • titanium compounds aluminum chelates, aluminum / zirconium compounds, etc.
  • it is more preferable to contain an epoxysilane or an aminosilane it is more preferable to contain
  • secondary aminosilanes include N-phenyl- ⁇ -aminopropyltrimethoxysilane.
  • the content of the coupling agent in the sealing resin composition is preferably 0.01 mass to the entire sealing resin composition, from the viewpoint of obtaining preferable flowability at the time of molding of the sealing resin composition. % Or more, more preferably 0.05% by mass or more, and preferably 2.0% by mass or less, more preferably 1.0% by mass or less.
  • the mold release agent is, for example, a natural wax such as carnauba wax; a synthetic wax such as oxidized polyethylene wax, montanic acid ester wax; a higher fatty acid such as zinc stearate and metal salts thereof; and one or more kinds selected from paraffins Can be included.
  • the content of the release agent in the sealing resin composition is preferably 0.01% by mass or more based on the entire sealing resin composition, from the viewpoint of obtaining preferable releasing characteristics of the cured product. More preferably, it is 0.05 mass% or more, Preferably, it is 2.0 mass% or less, More preferably, it is 1.0 mass% or less.
  • Ion scavengers include, for example, hydrotalcite.
  • the content of the ion scavenger in the sealing resin composition is preferably 0.03% by mass or more, based on the whole sealing resin composition, from the viewpoint of improving the reliability of the semiconductor device.
  • it is 0.05 mass% or more, Moreover, it is preferably 2.0 mass% or less, More preferably, it is 1.0 mass% or less.
  • the low stress component examples include silicone oil, silicone rubber, and carboxyl group-terminated butadiene acrylonitrile rubber.
  • the content of the low stress component in the sealing resin composition is preferably 0.01% by mass or more with respect to the entire sealing resin composition, from the viewpoint of improving the connection reliability of the semiconductor device. More preferably, it is 0.02 mass% or more, Preferably, it is 2.0 mass% or less, More preferably, it is 1.0 mass% or less.
  • the flame retardant can include, for example, one or more selected from aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene.
  • the antioxidant includes, for example, one or more selected from a hindered phenol compound, a hindered amine compound and a thioether compound.
  • Method for producing sealing resin composition Next, the method for producing the sealing resin composition will be described.
  • the sheet-like sealing resin composition may be obtained, for example, by vacuum laminate molding or compression molding after pulverization in the above method.
  • the degree of dispersion, the fluidity, and the like of the obtained sealing resin composition may be adjusted as appropriate.
  • the resin composition for sealing whose content of S in a hardened
  • the sealing resin composition obtained in the present embodiment contains the components (A) to (C), and the content of S in the cured product is in a specific range, so that a Cu wire can be used by using this. Even when used in combination with the above, it is possible to obtain a semiconductor device which is excellent in HTSL characteristics and excellent in laser sealability.
  • FIG. 1 is a cross-sectional view showing an example of a semiconductor device 100 according to the present embodiment.
  • the substrate 30 is, for example, a lead frame.
  • the semiconductor device 100 of the present embodiment includes the semiconductor element 20, the bonding wire 40 connected to the semiconductor element 20, and the sealing member 50, and the sealing member 50 is for the above-described sealing. It consists of a cured product of the resin composition. More specifically, the semiconductor element 20 is fixed on the base 30 through the die attach material 10, and the semiconductor device 100 is connected to the electrode pad 22 provided on the semiconductor element 20 through the bonding wire 40. And the outer lead 34 connected.
  • the bonding wire 40 can be set according to the semiconductor element 20 to be used, but for example, a Cu wire can be used.
  • the semiconductor element 20 may be fixed on the die pad 32 of the base 30 via the die attach material 10.
  • the sealing member 50 is formed of a cured product of the above-described sealing resin composition. Therefore, in the semiconductor device 100, even when the bonding wire 40 is made of a material containing Cu, excellent HTSL characteristics can be obtained, and the semiconductor device 100 is excellent in the marking property of a laser such as a YAG laser. .
  • the sealing member 50 is formed, for example, by sealing and molding the sealing resin composition using a known method such as a transfer molding method or a compression molding method.
  • a mark such as YAG laser is imprinted on the upper surface of the sealing member 50, for example.
  • This mark is made up of, for example, at least one or more of characters, numbers, or symbols consisting of straight lines or curves.
  • the mark indicates, for example, a product name, a product number, a lot number, or a maker name of a semiconductor package.
  • the above mark may be imprinted by, for example, a YVO 4 laser, a carbonic acid laser or the like.
  • Example 1 to 5 and Comparative Examples 1 to 4 Preparation of resin composition for sealing
  • a sealing resin composition was prepared as follows for each of the examples and the comparative examples. First, each component shown in Table 1 was mixed by the mixer. Next, the obtained mixture was roll-kneaded, and then cooled and pulverized to obtain a sealing resin composition which is a powder.
  • Tg (° C) Glass transition temperature: A low-pressure transfer molding machine (manufactured by Kotaki Seiki Co., Ltd., KTS-30) is diverted to insert molding, and a resin for fixing is applied under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa and a curing time of 2 minutes. The composition was injection molded to obtain a 4 mm ⁇ 4 mm ⁇ 15 mm test piece. The resulting test piece is post-cured at 175 ° C. for 4 hours, and then heated in a temperature range of 0 ° C. to 320 ° C.
  • thermomechanical analyzer TMA 100, manufactured by Seiko Instruments Inc.
  • TMA 100 thermomechanical analyzer 100, manufactured by Seiko Instruments Inc.
  • the linear expansion coefficient ( ⁇ 1) in the region below the glass transition temperature and the linear expansion coefficient ( ⁇ 2) of the rubbery equivalent region are determined.
  • the intersection point of the extension lines of ⁇ 1 and ⁇ 2 was taken as the glass transition temperature (unit: ° C.).
  • a semiconductor device was manufactured as follows for each of Examples 1 to 5 and Comparative Examples 1 to 4. First, a TEG (Test Element Group) chip (3.5 mm ⁇ 3.5 mm) having an aluminum electrode pad was mounted on a die pad portion of a lead frame whose surface was plated with Ag. Next, a wire pitch of 120 ⁇ m is formed using a bonding wire composed of an electrode pad of the TEG chip (hereinafter, also simply referred to as “electrode pad”) and an outer lead portion of the lead frame with a metallic material of Cu 99.9%. Wire bonding.
  • electrode pad a bonding wire composed of an electrode pad of the TEG chip (hereinafter, also simply referred to as “electrode pad”) and an outer lead portion of the lead frame with a metallic material of Cu 99.9%. Wire bonding.
  • the structure thus obtained is sealed and molded using a resin composition for sealing under conditions of a mold temperature of 175 ° C., an injection pressure of 10.0 MPa and a curing time of 2 minutes using a low pressure transfer molding machine, A semiconductor package was produced. Thereafter, the obtained semiconductor package was post-cured at 175 ° C. for 4 hours to obtain a semiconductor device.
  • the obtained semiconductor device was subjected to HTSL (high temperature storage test) according to the following method.
  • Each semiconductor device was stored under conditions of a temperature of 200 ° C. for 1500 hours.
  • the electrical resistance value between the wire and the electrode pad was measured for the semiconductor device after storage.
  • the average value of the respective semiconductor devices showed an electric resistance value of less than 110% of the average value of the initial resistance value as OK, and the one showing an electric resistance value of 110% or more as NG.

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JP2020198362A (ja) * 2019-06-03 2020-12-10 住友ベークライト株式会社 封止樹脂組成物およびアルミニウム電解コンデンサ

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