WO2019065725A1 - 電子素子搭載用基板および電子装置 - Google Patents

電子素子搭載用基板および電子装置 Download PDF

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Publication number
WO2019065725A1
WO2019065725A1 PCT/JP2018/035663 JP2018035663W WO2019065725A1 WO 2019065725 A1 WO2019065725 A1 WO 2019065725A1 JP 2018035663 W JP2018035663 W JP 2018035663W WO 2019065725 A1 WO2019065725 A1 WO 2019065725A1
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Prior art keywords
substrate
main surface
electronic element
mounting
electronic device
Prior art date
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PCT/JP2018/035663
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English (en)
French (fr)
Inventor
幸雄 森田
登 北住
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京セラ株式会社
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Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to US16/650,425 priority Critical patent/US11382215B2/en
Priority to CN201880060876.1A priority patent/CN111108594B/zh
Priority to JP2019545561A priority patent/JP7121027B2/ja
Priority to EP18861408.5A priority patent/EP3690930B1/en
Publication of WO2019065725A1 publication Critical patent/WO2019065725A1/ja
Priority to US17/833,157 priority patent/US11617267B2/en
Priority to JP2022125053A priority patent/JP7460704B2/ja
Priority to US18/188,997 priority patent/US20230232536A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/184—Components including terminals inserted in holes through the printed circuit board and connected to printed contacts on the walls of the holes or at the edges thereof or protruding over or into the holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09072—Hole or recess under component or special relationship between hole and component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10242—Metallic cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electronic element mounting substrate and an electronic device.
  • an electronic element mounting substrate has an insulating substrate having a first main surface, a second main surface, and a side surface, and a mounting portion of an electronic element provided on the first main surface of the insulating substrate and a wiring layer. ing.
  • the electronic element mounting substrate after the electronic element is mounted on the mounting portion of the electronic element, the electronic element is mounted on the electronic element mounting package to form an electronic device.
  • an optical element such as a LD (Laser Diode) or an LED (Light Emitting Diode) is mounted as an electronic element
  • the amount of light emission decreases as the temperature rises. Therefore, heat dissipation measures are taken to suppress the temperature rise. There is a need.
  • the substrate on which the LED element is mounted is fixed on the heat sink (also referred to as "heat dissipation member"), and the heat generated at the LED element is dissipated to the heat sink (Japanese Patent Laid-Open No. See the official gazette).
  • the substrate for mounting an electronic element of the present disclosure has a first main surface, and a rectangular first substrate having a mounting portion of the electronic element positioned on the first main surface, and the first main surface relative to the first main surface Located on the second main surface, made of a carbon material, rectangular, and having a third main surface facing the second main surface and a fourth main surface facing the third main surface, and being flat
  • the third main surface or the fourth main surface is provided with a second substrate including a recess in the fourth main surface, which is larger than the heat transfer in the direction in which the heat transfer in the longitudinal direction intersects perpendicularly to the longitudinal direction.
  • the electronic device of the present disclosure includes the electronic element mounting substrate of the above configuration, an electronic element mounted on the mounting portion of the electronic element mounting substrate, and a heat transfer body located in the recess.
  • FIG. 1 (a) is a top view which shows the board
  • (b) is a bottom view of (a). It is the perspective view which decomposed
  • FIG. 1 (a) is a longitudinal sectional view taken along the line AA of the electronic device mounting substrate shown in FIG. 1 (a)
  • FIG. 1 (b) is a longitudinal sectional view taken along the line BB.
  • (A) is a top view which shows the electronic device which mounted an electronic element in the board
  • (b) is a BB of (a) FIG.
  • FIG. 5 is a longitudinal cross-sectional view including a heat sink at a line.
  • A) is a top view which shows the board
  • (b) is a bottom view of (a).
  • FIG. 5 (a) is a longitudinal sectional view taken along the line AA of the electronic device mounting substrate shown in FIG. 5 (a)
  • FIG. 5 (b) is a longitudinal sectional view taken along the line BB.
  • A) is a top view which shows the other example of the electronic device except the board
  • (b) is a heat sink in the BB line of (a).
  • FIG. 8 (a) is a top view which shows the board
  • (b) is a bottom view of (a).
  • FIG. 8 (a) is a longitudinal sectional view taken along the line AA of the electronic element mounting substrate shown in FIG. 8 (a)
  • FIG. 8 (b) is a longitudinal sectional view taken along the line BB.
  • (A) is a top view which shows the electronic device which mounted an electronic element in the board
  • (b) is BB of (a)
  • FIG. 5 is a longitudinal cross-sectional view including a heat sink at a line.
  • the electronic element mounting substrate 1 in the first embodiment includes a first substrate 11 and a second substrate 12 including a recess 12a as in the example shown in FIGS.
  • the electronic device includes an electronic element substrate 1 and an electronic element 2 mounted on the mounting portion 11 a of the electronic element mounting substrate.
  • the electronic device mounting substrate 1 in the first embodiment has a first main surface 111 and a rectangular first substrate 11 having a mounting portion 11 a of the electronic device 2 positioned on the first main surface 111.
  • the fourth main surface 121 or the fourth main surface 122 is larger than the heat conduction in the direction in which the heat conduction in the longitudinal direction perpendicularly intersects the longitudinal direction
  • a second substrate 12 including a recess 12a has a metal layer 13 on the surface.
  • the electronic element 2 is mounted on the xy plane in the virtual xyz space.
  • the upward direction means the positive direction of the virtual z axis.
  • the distinction between the upper and lower sides in the following description is for convenience, and does not limit the upper and lower sides when the electronic element mounting substrate 1 or the like is actually used.
  • the metal layer 13 is shown by hatching in the example shown in FIG. 1 to FIG.
  • the first substrate 11 is indicated by a broken line on the outer surface of the first substrate 11 which is invisible in oblique view.
  • the second substrate 12 shows the outer surface of the first substrate 11 and the inner side surface of the recess 12a, which are invisible in oblique view, by broken lines.
  • the first substrate 11 is formed of a single layer or a plurality of insulating layers and has a first major surface 111 (upper surface in FIGS. 1 to 4) and a second major surface 112 (lower surface in FIGS. 1 to 4) There is.
  • the first substrate 11 is formed of a single-layer insulating layer in the example shown in FIGS.
  • the first substrate 11 has a rectangular plate shape having two pairs of opposing sides (four sides) with respect to each of the first major surface 111 and the second major surface 112 in a plan view.
  • the first substrate 11 has a mounting portion 11a for mounting the electronic device 2 on the first main surface 111, and in the example shown in FIGS. 1 to 4, it has a rectangular shape long in one direction in plan view.
  • the first substrate 11 functions as a support for supporting the electronic element 2, and the electronic element 2 is bonded to the mounting portion 11 a located on the first major surface 111 of the first substrate 11 through a bonding member. It is fixed.
  • the first substrate 11 for example, ceramics such as an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic sintered body can be used.
  • the first substrate 11 is, for example, an aluminum nitride sintered body, it is suitable for a raw material powder such as aluminum nitride (AlN), erbium oxide (Er 2 O 3 ), yttrium oxide (Y 2 O 3 ), etc.
  • An organic binder, a solvent and the like are added and mixed to prepare a slurry.
  • the slurry is formed into a sheet by employing a conventionally known doctor blade method, calendar roll method or the like to produce a ceramic green sheet. If necessary, a plurality of ceramic green sheets are laminated, and the ceramic green sheets are fired at a high temperature (about 1800 ° C.) to manufacture a first substrate 11 consisting of a single layer or a plurality of insulating layers.
  • the second substrate 12 has a third main surface 121 (upper surface in FIGS. 1 to 4) and a fourth main surface 122 (lower surface in FIGS. 1 to 4).
  • the second substrate 12 has a rectangular plate shape having two pairs of opposing sides (four sides) with respect to each of the third major surface 121 and the fourth major surface 122 in a plan view. .
  • the second substrate 12 is formed of, for example, a carbon material, and is formed as a stacked structure of graphene in which six-membered rings are connected by a covalent bond. Each surface is a material coupled by van der Waals force.
  • the second substrate 12 has a recess 12 a opened on the fourth main surface 122 side.
  • the recess 12 a is open halfway from the fourth main surface 122 side of the second substrate 12 to the thickness direction of the second substrate 12.
  • the concave portion 12 a overlaps with the mounting portion 11 a positioned on the first main surface 111 of the first substrate 11 in plan view, and can be excellent in heat dissipation.
  • the recess 12 a of the second substrate 12 can be formed on the fourth main surface 122 side of the second substrate 12 by laser processing, screw hole processing, or the like, for example.
  • the recess 12 a is a region for positioning the heat transfer body 4 excellent in heat dissipation.
  • the first substrate 11 an aluminum nitride sintered body excellent in thermal conductivity is suitably used.
  • the first substrate 11 and the second substrate 12 are made of an active brazing material such as TiCuAg alloy or TiSnAgCu alloy so that the second major surface 112 of the first substrate 11 and the third major surface 121 of the second substrate 12 face each other. It adheres with the jointing material which consists of.
  • the bonding material is disposed between the first substrate 11 and the second substrate 12 to a thickness of about several tens of ⁇ m.
  • the substrate thickness T1 of the first substrate 11 is, for example, about 50 ⁇ m to 500 ⁇ m
  • the substrate thickness T2 of the second substrate 12 is, for example, about 100 ⁇ m to 2000 ⁇ m.
  • T2> T1 the first substrate 11 and the second substrate 12 can properly dissipate the heat of the first substrate 11 to the second substrate 12.
  • the thermal conductivity ⁇ of the first substrate 11 is substantially constant in the X direction and the Y direction in the plane direction as in the example shown in FIG. 2, and is also substantially constant in the plane direction and thickness direction of the first substrate 11 ( ⁇ x ⁇ xy ⁇ ⁇ z).
  • the first substrate 11 having a thermal conductivity ⁇ of about 100 to 200 W / m ⁇ K is used as the first substrate 11.
  • the thermal conductivity ⁇ of the second substrate 12 is different in magnitude between the X direction and the Y direction in the planar direction.
  • the relationship between the thermal conductivity ⁇ x, ⁇ y, ⁇ z in each direction of the second substrate 12 is “thermal conductivity ⁇ y ⁇ thermal conductivity ⁇ z >> thermal conductivity ⁇ x” as shown in FIG.
  • the thermal conductivity ⁇ y and the thermal conductivity ⁇ z of the second substrate 12 are about 1000 W / m ⁇ K, and the thermal conductivity ⁇ x of the second substrate 12 is about 4 W / m ⁇ K.
  • the thermal conductivity of the electronic element mounting substrate 1 of the embodiment of the present disclosure can be measured, for example, by an analysis method such as a laser flash method. Further, in the case of measuring the thermal conductivity of the second substrate 12, the bonding material for bonding the first substrate base 11 and the second substrate 12 is removed, and the second substrate 12 is subjected to a laser flash method or the like. It can be measured by an analysis method.
  • the thermal conductivity ⁇ y in the longitudinal direction of the first substrate 11 and the thermal conductivity ⁇ z in the thickness direction of the second substrate 12 are the thermal conductivity ⁇ x in the direction perpendicular to the longitudinal direction of the first substrate 11. It is arranged to be larger.
  • the metal layer 13 is positioned on the first major surface 111 of the first substrate 11 so as to sandwich the second substrate 12 in the longitudinal direction of the first substrate 11 in plan view (plane perspective). Further, the metal layers 13 and the second substrate 12 are alternately located in the longitudinal direction of the first substrate 11 in plan view (planar perspective).
  • the metal layer 13 is used, for example, as a connection portion with the connection member 3 such as a bonding wire with the electrode of the electronic element 2.
  • the metal layer 13 includes a thin film layer and a plating layer.
  • the thin film layer has, for example, an adhesion metal layer and a barrier layer.
  • the adhesion metal layer constituting the thin film layer is located on the first major surface 111 of the first substrate 11.
  • the adhesion metal layer is made of, for example, tantalum nitride, nickel-chromium, nickel-chromium-silicon, tungsten-silicon, molybdenum-silicon, tungsten, molybdenum, titanium, chromium or the like, and a vapor deposition method, ion plating method, sputtering method, etc.
  • the first substrate 11 is placed in a deposition chamber of a vacuum deposition apparatus, and a metal piece serving as an adhesion metal layer is placed on a deposition source in the deposition chamber. While the deposition chamber is in a vacuum state (pressure of 10 -2 Pa or less), the metal piece disposed in the evaporation source is heated and evaporated, and the molecules of the vapor-deposited metal piece are deposited on the first substrate 11 Thus, a thin film metal layer to be an adhesion metal layer is formed.
  • a resist pattern is formed on the first substrate 11 on which the thin film metal layer is formed by photolithography, and then the excessive thin film metal layer is removed by etching, whereby the adhesion metal layer is formed.
  • a barrier layer is deposited on the upper surface of the adhesion metal layer, and the barrier layer has good adhesion and wettability with the adhesion metal layer and the plating layer, and firmly bonds the adhesion metal layer and the plating layer together with the adhesion metal layer and plating Acts to prevent interdiffusion with layers.
  • the barrier layer is made of, for example, nickel-chromium, platinum, palladium, nickel, cobalt or the like, and is deposited on the surface of the adhesion metal layer by a thin film forming technique such as vapor deposition, ion plating or sputtering.
  • the thickness of the adhesion metal layer is preferably about 0.01 to 0.5 ⁇ m. If the thickness is less than 0.01 ⁇ m, it tends to be difficult to firmly adhere the adhesion metal layer on the first substrate 11. If it exceeds 0.5 ⁇ m, peeling of the adhesion metal layer is likely to occur due to internal stress during film formation of the adhesion metal layer.
  • the thickness of the barrier layer is preferably about 0.05 to 1 ⁇ m. If the thickness is less than 0.05 ⁇ m, defects such as pinholes tend to occur to make it difficult to function as a barrier layer. If it exceeds 1 ⁇ m, peeling of the barrier layer is likely to occur due to internal stress during film formation.
  • the plating layer is deposited on the surface of the thin film layer by electrolytic plating or electroless plating.
  • the plating layer is made of a metal excellent in corrosion resistance such as nickel, copper, gold or silver and in connection with a connecting member, and, for example, a nickel plating layer with a thickness of about 0.5-5 ⁇ m and a gold plating of about 0.1-3 ⁇ m Layers are deposited sequentially. As a result, corrosion of the metal layer 13 can be effectively suppressed, and bonding between the electronic element 2 and the metal layer 13 or bonding between the metal layer 13 and the connection member 3 can be strengthened.
  • a metal layer such as copper (Cu) or gold (Au) may be disposed on the barrier layer so that the plating layer is favorably formed.
  • a metal layer is formed by the same method as the thin film layer.
  • the exposed side surface of the second substrate 12 and the fourth major surface 122 are formed in advance.
  • the protective film made of resin, ceramic, metal or the like is positioned, the second substrate 12 made of a carbon material is not exposed at the time of manufacturing the substrate 1 for mounting an electronic element, so that deterioration due to chemicals is reduced. it can.
  • the electronic element 2 is mounted on the mounting portion 11 a located on the first main surface 111 side of the electronic element mounting substrate 1, and the heat transfer body 4 is positioned in the recess 12 a of the electronic element mounting substrate 1.
  • the device can be made.
  • the electronic element 2 mounted on the electronic element mounting substrate 1 is, for example, a light emitting element such as LD (Laser Diode) or LED (Light Emitting Diode), or a light receiving element such as PD (Photo Diode).
  • the electronic element 2 is mounted on, for example, the mounting portion 11a, and the electrode and the metal layer of the electronic element 2 through the connection member 3 such as a solder bump, a gold bump, or a conductive resin (anisotropic conductive resin etc.) By being electrically connected to 13, it is mounted on the electronic element mounting substrate 1.
  • the electrode of the electronic element 2 and the metal layer 13 are electrically connected through the connection member 3 such as a bonding wire. It is mounted on the electronic element mounting substrate 1.
  • the heat transfer body 4 or the heat sink 5 is made of, for example, a material having an excellent thermal conductivity, such as copper (Cu), copper-tungsten (CuW), copper-molybdenum (CuMo) or the like.
  • the thermal conductivity ⁇ 2 of the heat transfer body 4 or the heat sink 5 is substantially constant in the X direction and the Y direction in the plane direction, and is also substantially constant in the plane direction and thickness direction of the heat transfer body 4 or the heat sink 5 ⁇ 2 x ⁇ 2 y ⁇ 2 z).
  • the thermal conductivity ⁇ 2 of the heat transfer body 4 or the heat sink 5 is equal to or higher than the thermal conductivity ⁇ of the first substrate 11 ( ⁇ 2x> ⁇ x, 22y> ⁇ y,> 2z> ⁇ z).
  • the fourth main surface 121 or the fourth main surface 122 has a fourth main surface 122 opposite to each other, and the third main surface 121 or the fourth main surface 122 has a heat conduction in the longitudinal direction larger than that in the direction perpendicular to the longitudinal direction.
  • heat generated from the electronic element 2 at the time of operation of the electronic device is, for example, the first substrate 11 and the second substrate 12 whose thickness is small. It is easily transmitted to the heat transfer body 4 located in the recess 12 a via the third main surface 121 and the bottom surface of the recess 12 a, and the second substrate 12 The heat is likely to be transferred in the longitudinal direction, the heat is easily radiated from the mounting portion 11a of the electronic element 2 to the surroundings, and the electronic device operates favorably by suppressing the malfunction of the electronic element 2 due to the heat generated from the electronic element 2. can do.
  • the electronic element mounting substrate 1 in the embodiment of the present disclosure can be suitably used in a thin, high-power electronic device, and the reliability of the electronic element mounting substrate 1 can be improved.
  • an optical element such as an LD or an LED
  • it can be suitably used as a substrate 1 for mounting an electronic element for an optical device which is thin and excellent in directivity.
  • the second substrate 12 is, as in the example shown in FIGS. 1 to 4, an electronic device 2 that transfers heat to the second substrate 12 when it is larger than the mounting portion 11 a (larger than the electronic device 2) in plan view.
  • the heat is likely to be well transferred to the second substrate 12 in the longitudinal direction of the first substrate 11, and can be reliably transferred to the outside through the heat transfer body 4.
  • the electronic device mounting substrate 1 configured as described above and the electronic device 2 mounted on the mounting portion 11 a of the electronic device mounting substrate 1 can be used for a long time. It is possible to make the electronic device excellent in reliability.
  • the electronic device according to the second embodiment differs from the electronic device according to the above-described embodiment in that the inner wall surface of the recess 12 a has a screw shape.
  • the metal layer 13 is shown by hatching in the examples shown in FIGS.
  • the recess 12 a is opened on the fourth main surface 122 side of the second substrate 12, and the inner wall surface of the recess 12 a has a screw shape.
  • those having any of the thermal conductivity ⁇ ⁇ x, yy, ⁇ z, ⁇ x, ⁇ y, and ⁇ z are omitted for convenience.
  • heat generated from the electronic element 2 at the time of operation of the electronic device is the first substrate 11 and the thickness is easily transmitted to the heat transfer body 4 positioned in the recess 12a via the third main surface 121 of the second substrate 12 and the bottom surface of the recess 12a, and the length of the second substrate 12
  • the heat is likely to be transferred in the direction, the heat is easily radiated from the mounting portion 11a of the electronic element 2 to the surroundings, and the electronic device operates favorably by suppressing the malfunction of the electronic element 2 due to the heat generated from the electronic element 2. be able to.
  • the heat transfer body 4 in the recess 12 a in which the inner wall surface is screw-shaped, the inner wall surface of the recess 12 of the second substrate 12 and the heat transfer body 4 are preferably brought into contact with each other.
  • an electronic element mounting substrate capable of reliably transferring heat to the external heat sink 5.
  • the first substrate 11 and the second substrate 12 are made of an active brazing material such as TiCuAg alloy or TiSnAgCu alloy so that the second major surface 112 of the first substrate 11 and the third major surface 121 of the second substrate 12 face each other. It adheres with the jointing material which consists of.
  • the bonding material is disposed between the first substrate 11 and the second substrate 12 to a thickness of about several tens of ⁇ m.
  • the recess 12 a of the second substrate 12 can be formed in the second substrate 12 by screw hole processing, for example.
  • the substrate thickness T1 of the first substrate 11 is, for example, about 50 ⁇ m to 500 ⁇ m
  • the substrate thickness T2 of the second substrate 12 is, for example, about 100 ⁇ m to 2000 ⁇ m. is there. If the substrate thickness T1 of the first substrate 11 and the substrate thickness T2 of the second substrate 12 satisfy T2> T1, the heat of the first substrate 11 can be favorably dissipated to the second substrate 12.
  • the first substrate 11 has a plurality of mounting portions 11 a for mounting each of the plurality of electronic elements 2 on the first major surface 111 in the example shown in FIGS. 5 to 7.
  • the first substrate 11 and the second substrate 12 have a rectangular shape elongated in the direction of the array of the plurality of electronic elements 2 (the array of the mounting portions 11a).
  • the concave portion 12a located in the second substrate 12 overlaps with a part of the plurality of mounting portions 11a in planar perspective.
  • the heat transferred to the second substrate 12 is the second substrate
  • the heat is transferred more easily in the longitudinal direction of the second substrate 12 than in the direction perpendicular to the longitudinal direction of 12, the heat is transferred to the side of the recess 12a, and the heat is favorably transferred outside via the heat transfer body 4 located in the recess 12a. Is likely to transfer heat.
  • the electronic element mounting substrate 1 of the second embodiment can be manufactured using the same manufacturing method as the electronic element mounting substrate 1 of the above-described embodiment.
  • the electronic element mounting substrate 1 according to the third embodiment differs from the electronic element mounting substrate 1 of the above-described embodiment in that the fourth main surface 122 of the second substrate 12 faces the fourth main surface. It is a point at which the third substrate 14 having the sixth major surface 142 opposite to the five major surfaces 141 and the fifth major surface 141 is located.
  • the metal layer 13 is hatched in the examples shown in FIGS. 8 and 9.
  • the first substrate 11 shows a region overlapping with the recess 12a in a perspective view by a broken line.
  • the third substrate 14 has a rectangular plate shape having two pairs of opposing sides (four sides) with respect to each of the fifth major surface 141 and the sixth major surface 142 in a plan view. Further, the third substrate 14 has a through hole 14 a that penetrates in the thickness direction, which is opposed to the recess 12 a of the second substrate 12.
  • the heat generated from the electronic element 2 at the time of operation of the electronic device is the first substrate 11 and the thickness is easily transmitted to the heat transfer body 4 positioned in the recess 12a via the third main surface 121 of the second substrate 12 and the bottom surface of the recess 12a, and the length of the second substrate 12
  • the heat is likely to be transferred in the direction, the heat is easily radiated from the mounting portion 11a of the electronic element 2 to the surroundings, and the electronic device operates favorably by suppressing the malfunction of the electronic element 2 due to the heat generated from the electronic element 2. be able to.
  • the first substrate 11 has a plurality of mounting portions 11 a for mounting the plurality of electronic elements 2 on the first major surface 111 in the example shown in FIGS. 8 to 10.
  • the first substrate 11, the second substrate 12, and the third substrate 14 have a rectangular shape elongated in the direction of the array of the plurality of electronic elements 2 (the array of the mounting portions 11a).
  • the concave portion 12a positioned in the second substrate 12 and the through holes 14a positioned in the third substrate 14 overlap with a part of the plurality of mounting portions 11a in planar perspective, and can be excellent in heat dissipation. .
  • the third substrate 14 similarly to the first substrate 11, an aluminum nitride sintered body excellent in thermal conductivity is preferably used.
  • the thermal conductivity ⁇ of the third substrate 14 is substantially constant in the X direction and the Y direction in the plane direction, as in the first substrate 11, and is also substantially constant in the plane direction and the thickness direction of the first substrate 11. is there.
  • the fourth main surface 122 of the second substrate and the fifth main surface 141 of the third substrate 14 are bonded by a bonding material made of an active brazing material such as a TiCuAg alloy or a TiSnAgCu alloy.
  • the bonding material is disposed between the first substrate 11 and the second substrate 12 and between the second substrate 12 and the third substrate 14 in a thickness of about several tens of ⁇ m.
  • the substrate thickness T1 of the first substrate 11 is, for example, about 50 ⁇ m to 500 ⁇ m
  • the substrate thickness T2 of the second substrate 12 is, for example, about 100 ⁇ m to 2000 ⁇ m
  • the substrate thickness T3 of the third substrate 14 is, for example, about 50 ⁇ m to 500 ⁇ m. If the substrate thickness T1 of the first substrate 11 and the substrate thickness T2 of the second substrate 12 satisfy T2> T1, the heat of the first substrate 11 can be favorably dissipated to the second substrate 12.
  • the first substrate 11 and the third substrate 14 are formed of the same material as each other, for example, the first substrate 11 is made of an aluminum nitride sintered body having a thermal conductivity ⁇ of 200 W / m ⁇ K.
  • the third substrate 14 is a substrate made of an aluminum nitride sintered body having a thermal conductivity 33 of 200 W / m ⁇ K ( ⁇ x ⁇ 3 3x, yy ⁇ y 3y, ⁇ z ⁇ 3z), and the substrate of the first substrate 11
  • the thickness T1 and the substrate thickness T3 of the third substrate 14 are the same thickness (0.9T1 ⁇ T3 ⁇ 1.1T1)
  • the second substrate is larger than the thermal conductivity in the direction in which the thermal conduction in the longitudinal direction intersects perpendicularly with the longitudinal direction Since the first substrate 11 and the third substrate 14 are positioned with 12 interposed therebetween, distortion of the electronic element mounting substrate 1 is reduced during operation of the electronic device, and via the heat transfer body 4 located in the recess
  • the inner wall surface of the through hole 14a of the third substrate 14 may have a screw shape as in the example shown in FIG. 8 to FIG.
  • the inner wall surface of the through hole 14 a of the third substrate 14 can be suitably brought into contact with the heat transfer body 4, and an electronic element mounting substrate capable of reliably transferring heat to the external heat sink 5 is provided. can do.
  • the fourth main surface 122 of the second substrate 12 is the electronic element mounting substrate 1. It is possible to reduce deterioration due to chemicals or the like during the formation of the metal layer 13 on the first major surface 111 of the first substrate 11 and the formation of the metal plating layer on the metal layer 13 without being in an exposed state. it can. Similarly, when forming the metal layer 13 on the first major surface 111 of the first substrate 11 and forming the metal plating layer on the metal layer 13, the exposed side surface of the second substrate 12 in advance, A protective film made of resin, ceramic, metal or the like may be positioned.
  • the electronic element mounting substrate 1 of the third embodiment can be manufactured using the same manufacturing method as the electronic element mounting substrate 1 of the above-described embodiment.
  • the present disclosure is not limited to the examples of the embodiments described above, and various modifications are possible.
  • the metal layer 13 located on the first main surface 111 of the first substrate 11 is formed by the thin film method in the above-mentioned example, it is a metal layer using the conventionally known co-firing method or post-firing method, etc. It does not matter.
  • the metal layer 13 is provided on the first major surface 111 of the first substrate 11 before bonding the first substrate 11 and the second substrate 12.
  • the above-mentioned method may be used.
  • the electronic element mounting substrate 1 of the first embodiment to the electronic element mounting substrate 1 of the third embodiment are formed of a single-layer insulating layer, the number of insulating layers is different. I don't care.
  • the substrate may be formed of two or more insulating layers.

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Abstract

電子素子搭載用基板は、第１主面を有し、第１主面に位置した電子素子の搭載部を有した矩形状である第１基板と、第１主面と相対する第２主面に位置し、炭素材料からなり、矩形状であって、第２主面と対向する第３主面および第３主面と相対する第４主面を有し、平面透視において、第３主面または第４主面が、長手方向の熱伝導が長手方向に垂直に交わる方向の熱伝導より大きく、第４主面に凹部を含む第２基板とを備えている。

Description

電子素子搭載用基板および電子装置
　本発明は、電子素子搭載用基板および電子装置に関するものである。
　従来、電子素子搭載用基板は、第１主面と第２主面と側面とを有する絶縁基板と、絶縁基板の第１主面に設けられた電子素子の搭載部および配線層とを有している。電子素子搭載用基板において、電子素子の搭載部に電子素子を搭載した後、電子素子搭載用パッケージに搭載されて電子装置となる。例えば、電子素子としてＬＤ（Ｌａｓｅｒ　Ｄｉｏｄｅ）、ＬＥＤ（Ｌｉｇｈｔ　Ｅｍｉｔｔｉｎｇ　Ｄｉｏｄｅ）等の光素子を搭載した場合、温度が上昇すると発光量が低下するという特性があるので、放熱対策を施して温度上昇を抑える必要がある。これに対し、ヒートシンク（「放熱部材」とも称する。）上にＬＥＤ素子を搭載する基板を固定し、ＬＥＤ素子で発生した熱をヒートシンクに逃がすという対策が講じられている（特開2014-120502号公報参照。）。
　本開示の電子素子搭載用基板は、第１主面を有し、該第１主面に位置した電子素子の搭載部を有した矩形状である第１基板と、前記第１主面と相対する第２主面に位置し、炭素材料からなり、矩形状であって、前記第２主面と対向する第３主面および該第３主面と相対する第４主面を有し、平面透視において、前記第３主面または前記第４主面が、長手方向の熱伝導が長手方向に垂直に交わる方向の熱伝導より大きく、前記第４主面に凹部を含む第２基板とを備えている。
　本開示の電子装置は、上記構成の電子素子搭載用基板と、該電子素子搭載用基板の前記搭載部に搭載された電子素子と、前記凹部に位置した伝熱体とを有している。
（ａ）は、第１の実施形態における電子素子搭載用基板を示す上面図であり、（ｂ）は（ａ）の下面図である。 図１に示された電子素子搭載用基板を第１基板と第２基板とに分解した斜視図である。 （ａ）は、図１（ａ）に示された電子素子搭載用基板のＡ－Ａ線における縦断面図であり、（ｂ）は、Ｂ－Ｂ線における縦断面図である。 （ａ）は、図１（ａ）に示された電子素子搭載用基板に電子素子を搭載し、ヒートシンクを除いた電子装置を示す上面図であり、（ｂ）は（ａ）のＢ－Ｂ線におけるヒートシンクを含む縦断面図である。 （ａ）は、第２の実施形態における電子素子搭載用基板を示す上面図であり、（ｂ）は（ａ）の下面図である。 （ａ）は、図５（ａ）に示された電子素子搭載用基板のＡ－Ａ線における縦断面図であり、（ｂ）は、Ｂ－Ｂ線における縦断面図である。 （ａ）は、第２の実施形態における電子素子搭載用基板およびヒートシンクを除いた電子装置の他の例を示す上面図であり、（ｂ）は、（ａ）のＢ－Ｂ線におけるヒートシンクを含む縦断面図である。 （ａ）は、第３の実施形態における電子素子搭載用基板を示す上面図であり、（ｂ）は（ａ）の下面図である。 （ａ）は、図８（ａ）に示された電子素子搭載用基板のＡ－Ａ線における縦断面図であり、（ｂ）は、Ｂ－Ｂ線における縦断面図である。 （ａ）は、図８（ａ）に示された電子素子搭載用基板に電子素子を搭載し、ヒートシンクを除いた電子装置を示す上面図であり、（ｂ）は（ａ）のＢ－Ｂ線におけるヒートシンクを含む縦断面図である。
　本開示のいくつかの例示的な実施形態について、添付の図面を参照しつつ説明する。
　（第１の実施形態）
　第１の実施形態における電子素子搭載用基板１は、図１～図４に示された例のように、第１基板11と凹部12ａを含む第２基板12とを含んでいる。電子装置は、電子素子等用基板１と、電子素子搭載用基板の搭載部11ａに搭載された電子素子２とを含んでいる。
　第１の実施形態における電子素子搭載用基板１は、第１主面111を有し、第１主面111に位置した電子素子２の搭載部11ａを有した矩形状である第１基板11と、第１主面111と相対する第２主面112に位置し、炭素材料からなり、矩形状であって、第２主面112と対向する第３主面121および第３主面121と相対する第４主面122を有し、平面透視において、第３主面121または第４主面122が、長手方向の熱伝導が長手方向に垂直に交わる方向の熱伝導より大きく、第４主面に凹部12ａを含む第２基板12とを備えている。第１基板11は、表面に金属層13を有している。図４において、電子素子２は仮想のｘｙｚ空間におけるｘｙ平面に実装されている。図１～図４において、上方向とは、仮想のｚ軸の正方向のことをいう。なお、以下の説明における上下の区別は便宜的なものであり、実際に電子素子搭載用基板１等が使用される際の上下を限定するものではない。
　金属層13は、図１～図４に示す例において、網掛けにて示している。第１基板11は、図２（ａ）に示す例において、斜視にて不可視となる第１基板11の外面を破線にて示している。第２基板12は、図２（ｂ）に示す例において、斜視にて不可視となる第１基板11の外面および凹部12ａの内側面とを破線にて示している。
　第１基板11は、単層または複数層の絶縁層からなり、第１主面111（図１～図４では上面）および第２主面112（図１～図４では下面）を有している。第１基板11は、図１～図４に示す例において、単層の絶縁層からなる。第１基板11は、平面視において、第１主面111および第２主面112のそれぞれに対して二組の対向する辺（４辺）を有した矩形の板状の形状を有している。第１基板11は、第１主面111に電子素子２を搭載する搭載部11ａを有しており、図１～図４に示す例において、平面視において、一方方向に長い長方形状である。第１基板11は、電子素子２を支持するための支持体として機能し、第１基板11の第１主面111に位置した搭載部11ａ上に電子素子２が接合部材を介してそれぞれ接着され固定される。
　第１基板11は、例えば、酸化アルミニウム質焼結体（アルミナセラミックス），窒化アルミニウム質焼結体，ムライト質焼結体またはガラスセラミックス焼結体等のセラミックスを用いることができる。第１基板11は、例えば窒化アルミニウム質焼結体である場合であれば、窒化アルミニウム（ＡｌＮ），酸化エルビニウム（Ｅｒ2Ｏ3）、酸化イットリウム（Ｙ2Ｏ3）等の原料粉末に適当な有機バインダーおよび溶剤等を添加混合して泥漿物を作製する。この泥漿物を、従来周知のドクターブレード法またはカレンダーロール法等を採用してシート状に成形することによってセラミックグリーンシートを作製する。必要に応じて、複数枚のセラミックグリーンシートを積層し、セラミックグリーンシートを高温（約1800℃）で焼成することによって単層または複数の絶縁層からなる第１基板11が製作される。
　第２基板12は、第３主面121（図１～図４では上面）および第４主面122（図１～図４では下面）を有している。第２基板12は、平面視において、第３主面121および第４主面122のそれぞれに対して二組の対向する辺（４辺）を有した矩形の板状の形状を有している。
　第２基板12は、例えば、炭素材料からなり、六員環が共有結合でつながったグラフェンが積層した構造体として形成される。各面がファンデルワールス力で結合された材料である。
　第２基板12は、第４主面122側に開口された凹部12ａを有している。第１の実施形態の電子素子搭載用基板１において、凹部12ａは、第２基板12の第４主面122側から第２基板12の厚み方向の途中まで開口している。凹部12ａは、平面透視にて、第１基板11の第１主面111に位置した搭載部11ａと重なっており、放熱性に優れたものとすることができる。第２基板12の凹部12ａは、例えば、第２基板12の第４主面122側にレーザー加工、ねじ穴加工等によって形成しておくことができる。凹部12ａは、放熱性に優れた伝熱体４を位置させるための領域である。
　第１基板11は、熱伝導率に優れた窒化アルミニウム質焼結体が好適に用いられる。第１基板11と第２基板12とは、第１基板11の第２主面112と第２基板12の第３主面121とが対向するように、ＴiＣｕＡｇ合金、ＴｉＳｎＡｇＣｕ合金等の活性ろう材からなる接合材により接着される。接合材は、第１基板11と第２基板12との間に、数10μｍ程度の厚みに配置される。
　第１基板11の基板厚みＴ１は、例えば、50μｍ～500μｍ程度であり、第２基板12の基板厚みＴ２は、例えば、100μｍ～2000μｍ程度である。第１基板11と第２基板12とは、Ｔ２＞Ｔ１であると、第１基板11の熱を第２基板12に良好に放熱することができるとなる。
　第１基板11の熱伝導率κは、図２に示す例のように、平面方向におけるＸ方向とＹ方向とで略一定であり、第１基板11の平面方向と厚み方向とにおいても略一定である（κｘ≒κｙ≒κｚ）。例えば、第１基板11として、窒化アルミニウム質焼結体が用いられる場合、第１基板11は、100～200Ｗ／ｍ・Ｋ程度の熱伝導率κである第１基板11が用いられる。
　第２基板12の熱伝導率λは、平面方向におけるＸ方向とＹ方向とで大きさが異なっている。例えば、第２基板12のそれぞれの方向における熱伝導率λｘ、λｙ、λｚの関係は、図２に示すように、「熱伝導率λｙ≒熱伝導率λｚ＞＞熱伝導率λｘ」である。例えば、第２基板12の熱伝導率λｙおよび熱伝導率λｚは、1000Ｗ／ｍ・Ｋ程度であり、第２基板12の熱伝導率λｘは、４Ｗ／ｍ・Ｋ程度である。なお、本開示の実施形態における図および後述する実施形態の図において、便宜上、熱伝導率κｘ、κｙ、κｚ、λｘ、λｙ、λｚ、のいずれかを省略したものを含んでいる。
　本開示の実施形態の電子素子搭載用基板１の熱伝導率は、例えば、レーザーフラッシュ法等の分析方法により測定することができる。また、第２基板12の熱伝導率を測定する場合には、第１基板基体11と第２基板12とを接合する接合材を除去し、第２基板12に対して、レーザーフラッシュ法等の分析方法により測定することができる。
　第２基板12は、第１基板11の長手方向に対する熱伝導率λｙおよび第２基板12の厚み方向の熱伝導率λｚは、第１基板11の長手方向に垂直に交わる方向の熱伝導率λｘより大きくなるように配置されている。
　金属層13は、第１基板11の第１主面111に、平面視（平面透視）において第１基板11の長手方向で第２基板12を挟むように位置している。また、平面視（平面透視）において第１基板11の長手方向で金属層13と第２基板12とが交互に位置している。金属層13は、例えば、電子素子２の電極とのボンディングワイヤ等の接続部材３との接続部として用いられる。
　金属層13は、薄膜層およびめっき層とを含んでいる。薄膜層は、例えば、密着金属層とバリア層とを有している。薄膜層を構成する密着金属層は、第１基板11の第１主面111に位置する。密着金属層は、例えば、窒化タンタル、ニッケル－クロム、ニッケル－クロムーシリコン、タングステン－シリコン、モリブデン－シリコン、タングステン、モリブデン、チタン、クロム等から成り、蒸着法、イオンプレーティング法、スパッタリング法等の薄膜形成技術を採用することにより、第１基板11の第１主面111に被着される。例えば真空蒸着法を用いて形成する場合には、第１基板11を真空蒸着装置の成膜室内に設置して、成膜室内の蒸着源に密着金属層と成る金属片を配置し、その後、成膜室内を真空状態（１０-2Ｐａ以下の圧力）にするとともに、蒸着源に配置された金属片を加熱して蒸着させ、この蒸着した金属片の分子を第１基板11に被着させることにより、密着金属層と成る薄膜金属の層を形成する。そして、薄膜金属層が形成された第１基板11にフォトリソグラフィ法を用いてレジストパターンを形成した後、エッチングによって余分な薄膜金属層を除去することにより、密着金属層が形成される。密着金属層の上面にはバリア層が被着され、バリア層は密着金属層とめっき層と接合性、濡れ性が良く、密着金属層とめっき層とを強固に接合させるとともに密着金属層とめっき層との相互拡散を防止する作用をなす。バリア層は、例えば、ニッケルークロム、白金、パラジウム、ニッケル、コバルト等から成り、蒸着法、イオンプレーティング法、スパッタリング法等の薄膜形成技術により密着金属層の表面に被着される。
　密着金属層の厚さは0.01～0.5μｍ程度が良い。0.01μｍ未満では、第１基板11上に密着金属層を強固に密着させることが困難となる傾向がある。0.5μｍを超える場合は密着金属層の成膜時の内部応力によって密着金属層の剥離が生じ易くなる。また、バリア層の厚さは0.05～１μｍ程度が良い。0.05μｍ未満では、ピンホール等の欠陥が発生してバリア層としての機能を果たしにくくなる傾向がある。１μｍを超える場合は、成膜時の内部応力によりバリア層の剥離が生じ易くなる。
　めっき層は、電解めっき法または無電解めっき法によって、薄膜層の表面に被着される。めっき層は、ニッケル，銅，金または銀等の耐食性、接続部材との接続性に優れる金属から成るものであり、例えば、厚さ0.5～５μｍ程度のニッケルめっき層と0.1～３μｍ程度の金めっき層とが順次被着される。これによって、金属層13が腐食することを効果的に抑制できるとともに、電子素子２と金属層13との接合、または金属層13と接続部材３との接合を強固にできる。
　また、バリア層上に、銅（Ｃｕ）、金（Ａｕ）等の金属層を配置し、めっき層が良好に形成されるようにしても構わない。このような金属層は、薄膜層と同様な方法により形成される。
　第１基板11の第１主面111への金属層13の形成、および金属層13上への金属めっき層の形成の際に、予め第２基板12の露出する側面および第４主面122に、樹脂、セラミックス、金属等からなる保護膜を位置させておくと、電子素子搭載用基板１の製作時に炭素材料からなる第２基板12が剥き出しにならないため、薬品等による変質を低減することができる。
　電子素子搭載用基板１の第１主面111側に位置した搭載部11ａ上に、電子素子２を搭載し、この電子素子搭載用基板１の凹部12ａに伝熱体４を位置させることによって電子装置を作製できる。電子素子搭載用基板１に搭載される電子素子２は、例えばＬＤ（Ｌａｓｅｒ　Ｄｉｏｄｅ）、ＬＥＤ（Ｌｉｇｈｔ　Ｅｍｉｔｔｉｎｇ　Ｄｉｏｄｅ）等の発光素子、ＰＤ（Ｐｈｏｔｏ　Ｄｉｏｄｅ）等の受光素子である。例えば、電子素子２は、例えば、搭載部11ａ上に搭載し、はんだバンプ、金バンプまたは導電性樹脂（異方性導電樹脂等）等の接続部材３を介して電子素子２の電極と金属層13とが電気的に接続されることによって電子素子搭載用基板１に搭載される。あるいは、Ａｕ－Ｓｎ等の接合材によって、搭載部11ａ上に固定された後、ボンディングワイヤ等の接続部材３を介して電子素子２の電極と金属層13とが電気的に接続されることによって電子素子搭載用基板１に搭載される。
　伝熱体４またはヒートシンク５は、例えば、銅（Ｃｕ）、銅－タングステン（ＣｕＷ）、銅－モリブデン（ＣｕＭｏ）等の熱伝導率に優れた材料から成る。伝熱体４またはヒートシンク５の熱伝導率κ２は、平面方向におけるＸ方向とＹ方向とで略一定であり、伝熱体４またはヒートシンク５の平面方向と厚み方向とにおいても略一定である（κ２ｘ≒κ２ｙ≒κ２ｚ）。伝熱体４またはヒートシンク５の熱伝導率κ２は、第１基板11の熱伝導率κ以上である（κ２ｘ＞κｘ、κ２ｙ＞κｙ、κ２ｚ＞κｚ）。
　本開示の実施形態における電子素子搭載用基板１によれば、第１主面111を有し、第１主面111に位置した電子素子２の搭載部を有した矩形状である第１基板11と、第１主面111と相対する第２主面112に位置し、炭素材料からなり、矩形状であって、第２主面112と対向する第３主面121および第３主面121と相対する第４主面122を有し、平面透視において、第３主面121または第４主面122が、長手方向の熱伝導が長手方向に垂直に交わる方向の熱伝導より大きく、第４主面に凹部12ａを含む第２基板12とを備えていることによって、例えば電子装置の作動時に、電子素子２から発生する熱が、第１基板11および厚みが小さくなっている第２基板12の第３主面121と凹部12ａの底面との間を介して、凹部12ａに位置する伝熱体４に伝わりやすく、また第２基板12の長手方向に伝熱しやすいものとなり、電子素子２の搭載部11ａから周囲に放熱しやすく、電子素子２から発生する熱による電子素子２の誤動作を抑制することで電子装置が良好に作動するものとすることができる。
　特に電子素子２としてＬＤ、ＬＥＤ等の光素子を搭載する場合には、伝熱体４を介してヒートシンク５に確実に伝熱させることができるので、電子素子搭載用基板１の歪みを抑制することで、光を精度よく放出することができる光学装置用の電子素子搭載用基板１とすることができる。
　本開示の実施形態における電子素子搭載用基板１は、薄型で高出力の電子装置において好適に使用することができ、電子素子搭載用基板１における信頼性を向上することができる。例えば、電子素子２として、ＬＤ、ＬＥＤ等の光素子を搭載する場合、薄型で指向性にすぐれた光学装置用の電子素子搭載用基板１として好適に用いることができる。
　第２基板12は、図１～図４に示す例のように、平面透視において、搭載部11ａよりも大きい（電子素子２よりも大きい）と、第２基板12に伝熱した電子素子２の熱が、第２基板12を第１基板11の長手方向に良好に伝熱されやすく、伝熱体４を介して外部に確実に伝熱させることができる。
　本開示の実施形態の電子装置によれば、上記構成の電子素子搭載用基板１と、電子素子搭載用基板１の搭載部11ａに搭載された電子素子２とを有していることによって、長期信頼性に優れた電子装置とすることができる。
　（第２の実施形態）
　次に、第２の実施形態による電子素子搭載用基板について、図５～図７を参照しつつ説明する。
　第２の実施形態における電子装置において、上述した実施形態の電子装置と異なる点は、凹部12ａの内壁面が螺子形状である点である。第２の実施形態において、金属層13は、図５～図７に示す例において、網掛けにて示している。凹部12ａは、第２基板12の第４主面122側に開口し、凹部12ａは、内壁面が螺子形状をしている。なお、本開示の実施形態における図および後述する実施形態の図において、便宜上、熱伝導率κｘ、κｙ、κｚ、λｘ、λｙ、λｚ、のいずれかを省略したものを含んでいる。
　第２の実施形態における電子素子搭載用基板１によれば、上述した実施形態の電子素子搭載用基板１と同様に、例えば電子装置の作動時に、電子素子２から発生する熱が、第１基板11および厚みが小さくなっている第２基板12の第３主面121と凹部12ａの底面との間を介して、凹部12ａに位置する伝熱体４に伝わりやすく、また第２基板12の長手方向に伝熱しやすいものとなり、電子素子２の搭載部11ａから周囲に放熱しやすく、電子素子２から発生する熱による電子素子２の誤動作を抑制することで電子装置が良好に作動するものとすることができる。
　また、内壁面が螺子形状の凹部12ａ内に伝熱体４を位置させることで、第２基板12の凹部12の内壁面と伝熱体４とを好適に接触させ、伝熱体４を介して外部のヒートシンク５に確実に伝熱させることが可能な電子素子搭載用基板を提供することができる。
　第１基板11と第２基板12とは、第１基板11の第２主面112と第２基板12の第３主面121とが対向するように、ＴiＣｕＡｇ合金、ＴｉＳｎＡｇＣｕ合金等の活性ろう材からなる接合材により接着される。接合材は、第１基板11と第２基板12との間に、数10μｍ程度の厚みに配置される。
　第２基板12の凹部12ａは、例えば、第２基板12にねじ穴加工等によって形成しておくことができる。
　第２の実施形態の電子素子搭載用基板１において、第１基板11の基板厚みＴ１は、例えば、50μｍ～500μｍ程度であり、第２基板12の基板厚みＴ２は、例えば、100μｍ～2000μｍ程度である。第１基板11の基板厚みＴ１と第２基板12の基板厚みＴ２とは、Ｔ２＞Ｔ１であると、第１基板11の熱を第２基板12に良好に放熱することができるとなる。
　第１基板11は、図５～図７に示す例において、第１主面111に複数の電子素子２のそれぞれを搭載する複数の搭載部11ａを有している。平面透視において、第１基板11および第２基板12は、複数の電子素子２の並び（搭載部11ａの並び）の方向に長い長方形状である。第２基板12に位置した凹部12ａは、平面透視において、複数の搭載部11ａの一部と重なっている。
　また、図５～図７に示す例のように、第１基板11の第１主面111上に複数の電子素子２を搭載する場合、第２基板12に伝熱した熱は、第２基板12の長手方向に垂直に交わる方向よりも第２基板12の長手方向に伝熱されやすく、凹部12ａ側に伝熱され、凹部12ａに位置した伝熱体４を介して、外部に良好に熱が伝熱しやすくなる。
　第２の実施形態の電子素子搭載用基板１は、上述の実施形態の電子素子搭載用基板１と同様の製造方法を用いて製作することができる。
　（第３の実施形態）
　次に、第３の実施形態による電子装置について、図８～図10を参照しつつ説明する。
　第３の実施形態における電子素子搭載用基板１において、上述した実施形態の電子素子搭載用基板１と異なる点は、第２基板12の第４主面122に、第４主面と相対する第５主面141および第５主面141と相対する第６主面142を有する第３基板14が位置している点である。第３の実施形態において、金属層13は、図８および図９に示す例において、網掛けにて示している。第１基板11は、図８および図９に示す例において、平面透視にて凹部12ａと重なる領域を破線にて示している。なお、本開示の実施形態における図および後述する実施形態の図において、便宜上、熱伝導率κｘ、κｙ、κｚ、λｘ、λｙ、λｚ、のいずれかを省略したものを含んでいる。
　第３基板14は、平面視において、第５主面141および第６主面142のそれぞれに対して二組の対向する辺（４辺）を有した矩形の板状の形状を有している。また、第３基板14は、第２基板12の凹部12ａと相対する、厚み方向に貫通する貫通孔14ａを有している。
　第３の実施形態における電子素子搭載用基板１によれば、上述した実施形態の電子素子搭載用基板１と同様に、例えば電子装置の作動時に、電子素子２から発生する熱が、第１基板11および厚みが小さくなっている第２基板12の第３主面121と凹部12ａの底面との間を介して、凹部12ａに位置する伝熱体４に伝わりやすく、また第２基板12の長手方向に伝熱しやすいものとなり、電子素子２の搭載部11ａから周囲に放熱しやすく、電子素子２から発生する熱による電子素子２の誤動作を抑制することで電子装置が良好に作動するものとすることができる。
　第１基板11は、図８～図10に示す例において、第１主面111に複数の電子素子２のそれぞれを搭載する複数の搭載部11ａを有している。平面透視において、第１基板11、第２基板12、第３基板14は、複数の電子素子２の並び（搭載部11ａの並び）の方向に長い長方形状である。第２基板12に位置した凹部12ａおよび第３基板14に位置した貫通孔14ａは、平面透視において、複数の搭載部11ａの一部と重なっており、放熱性に優れたものとすることができる。
　第３基板14は、第１基板11と同様に、熱伝導率に優れた窒化アルミニウム質焼結体が好適に用いられる。第３基板14の熱伝導率κは、第１基板11と同様に、平面方向におけるＸ方向とＹ方向とで略一定であり、第１基板11の平面方向と厚み方向とにおいても略一定である。第１基板11と第２基板12とは、第１基板11の第２主面112と第２基板12の第３主面121とが、ＴiＣｕＡｇ合金、ＴｉＳｎＡｇＣｕ合金等の活性ろう材からなる接合材により接着される。また、第２基板の第４主面122と第３基板14の第５主面141とが、ＴiＣｕＡｇ合金、ＴｉＳｎＡｇＣｕ合金等の活性ろう材からなる接合材により接着される。接合材は、第１基板11と第２基板12との間および第２基板12と第３基板14との間に、数10μｍ程度の厚みに配置される。
　第３の実施形態の電子素子搭載用基板１において、第１基板11の基板厚みＴ１は、例えば、50μｍ～500μｍ程度であり、第２基板12の基板厚みＴ２は、例えば、100μｍ～2000μｍ程度であり、第３基板14の基板厚みＴ３は、例えば、50μｍ～500μｍ程度である。第１基板11の基板厚みＴ１と第２基板12の基板厚みＴ２とは、Ｔ２＞Ｔ１であると、第１基板11の熱を第２基板12に良好に放熱することができるとなる。
　また、第１基板11と第３基板14とは、それぞれの材料を同様の材料により形成、例えば、第１基板11が、熱伝導率κが200Ｗ／ｍ・Ｋの窒化アルミニウム質焼結体からなる場合、第３基板14は、熱伝導率κ３が200Ｗ／ｍ・Ｋの窒化アルミニウム質焼結体からなる基板（κｘ≒κ３ｘ、κｙ≒κ３ｙ、κｚ≒κ３ｚ）とし、第１基板11の基板厚みＴ１と第３基板14の基板厚みＴ３とを同等の厚み（0.9Ｔ１≦Ｔ３≦1.1Ｔ１）としておくと、長手方向の熱伝導が長手方向に垂直に交わる方向の熱伝導より大きい第２基板12を挟んで第１基板11と第３基板14が位置されるので、電子装置の作動時に電子素子搭載用基板１の歪みを低減し、凹部12ａ内に位置した伝熱体４を介して、外部に良好に放熱することができる電子素子搭載用基板１とすることができる。
　第３基板14の貫通孔14ａの内壁面は、図８～図10に示す例のように、螺子形状であっても構わない。この場合、第３基板14の貫通孔14ａの内壁面と伝熱体４とを好適に接触させることができ、外部のヒートシンク５に確実に伝熱させることが可能な電子素子搭載用基板を提供することができる。
　また、第２基板12の第４主面122に、第３基板14の第５主面141が位置しているので、電子素子搭載用基板１は、第２基板12の第４主面122が剥き出した状態とならず、第１基板11の第１主面111への金属層13の形成、および金属層13上への金属めっき層の形成の際に、薬品等による変質を低減することができる。また、同様に、第１基板11の第１主面111への金属層13の形成、および金属層13上への金属めっき層の形成の際に、予め第２基板12の露出する側面に、樹脂、セラミックス、金属等からなる保護膜を位置させても構わない。
　第３の実施形態の電子素子搭載用基板１は、上述の実施形態の電子素子搭載用基板１と同様の製造方法を用いて製作することができる。
　本開示は、上述の実施の形態の例に限定されるものではなく、種々の変更は可能である。例えば、第１基板11の第１主面111に位置した金属層13は、上述の例では、薄膜法により形成しているが、従来周知のコファイア法またはポストファイア法等を用いた金属層であっても構わない。このような金属層13を用いる場合は、金属層13は、第１基板11と第２基板12との接合前にあらかじめ第１基板11の第１主面111に設けられる。なお、第１基板11の平面度を良好なものとするために、上述の方法であってもよい。
　第１の実施形態の電子素子搭載用基板１乃至第３の実施形態の電子素子搭載用基板１は、単層の絶縁層により形成しているが、絶縁層の層数は異なるものであっても構わない。例えば、第１の実施形態～第３の実施形態の電子素子搭載用基板１において、２層以上の絶縁層により形成しても構わない。

Claims (5)

  1. 　第１主面を有し、該第１主面に位置した電子素子の搭載部を有した矩形状である第１基板と、
    前記第１主面と相対する第２主面に位置し、炭素材料からなり、矩形状であって、前記第２主面と対向する第３主面および該第３主面と相対する第４主面を有し、
    平面透視において、前記第３主面または前記第４主面が、長手方向の熱伝導が長手方向に垂直に交わる方向の熱伝導より大きく、
    前記第４主面に凹部を含む第２基板とを備えていることを特徴とする電子素子搭載用基板。
  2. 　平面透視において、前記凹部は前記搭載部と重なっていることを特徴とする請求項１に記載の電子素子搭載用基板。
  3. 　前記第４主面に位置し、矩形状であって、前記第４主面と相対する第５主面および該第５主面と相対する第６主面を有しており、
    前記凹部と相対する、厚み方向に貫通する貫通孔を有した第３基板を備えていることを特徴とする請求項１または請求項２に記載の電子素子搭載用基板。
  4. 　平面透視において、前記貫通孔は前記搭載部と重なっていることを特徴とする請求項３に記載の電子素子搭載用基板。
  5. 　請求項１乃至請求項４のいずれかに記載の電子素子搭載用基板と、
    該電子素子搭載用基板の前記搭載部に搭載された電子素子と、
    前記凹部に位置した伝熱体とを有していることを特徴とする電子装置。
PCT/JP2018/035663 2017-09-28 2018-09-26 電子素子搭載用基板および電子装置 WO2019065725A1 (ja)

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