JP7082188B2 - 電子素子搭載用基板、電子装置および電子モジュール - Google Patents
電子素子搭載用基板、電子装置および電子モジュール Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 666
- 229910052751 metal Inorganic materials 0.000 claims description 78
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- 239000010410 layer Substances 0.000 description 121
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- 239000010409 thin film Substances 0.000 description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
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- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
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- 238000004458 analytical method Methods 0.000 description 2
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- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
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- 238000005260 corrosion Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
第1の実施形態における電子素子搭載用基板1は、図1~図4に示された例のように、第1基板11と第2基板12と放熱体13とを含んでいる。電子装置は、電子素子等用基板1と、電子素子搭載用基板の搭載部11aに搭載された電子素子2と、電子素子搭載用基板1が搭載された配線基板4とを含んでいる。電子装置は、例えば電子モジュールを構成するモジュール用基板6上の接続パッド6aに接合材7を用いて接続される。
次に、第2の実施形態による電子素子搭載用基板について、図5、図6を参照しつつ説明する。
次に、第3実施形態による電子装置について、図9、図10を参照しつつ説明する。
次に、第4の実施形態による電子装置について、図11、図12を参照しつつ説明する。
次に、第5の実施形態による電子装置について、図13、図14を参照しつつ説明する。
次に、第6の実施形態による電子装置について、図16~図19を参照しつつ説明する。
次に、第7の実施形態による電子素子搭載用基板について、図21、図22を参照しつつ説明する。
次に、第8の実施形態による電子装置について、図23、図24を参照しつつ説明する。
Claims (11)
- 第1主面を有し、該第1主面に位置するとともに、電子素子が搭載される長手領域である1または複数の搭載部および前記第1主面と反対側に第2主面を有した方形状である第1基板と、
前記第2主面に位置し、金属からなり、前記第2主面と対向する第3主面および該第3主面と反対側に第4主面を有した方形状である第2基板と、
該第2基板の内側に位置し、炭素材料からなり、厚み方向における前記第3主面側に位置した第5主面および該第5主面と反対側に第6主面を有する複数の放熱体とを備えており、
平面透視において、前記複数の放熱体は、前記1または複数の搭載部の長手方向および前記第2基板の相対する辺に沿った方向の熱伝導率より、前記1または複数の搭載部の長手方向および前記第2基板の相対する辺に沿った方向に垂直に交わる方向の熱伝導率が大きく、
前記第2基板の熱伝導率は、前記第1基板の熱伝導率より大きいとともに、前記1または複数の搭載部の長手方向および前記第2基板の相対する辺に沿った方向に垂直に交わる方向における前記複数の放熱体の熱伝導率よりも小さいことを特徴とする電子素子搭載用基板。 - 前記複数の放熱体は、前記第2基板の内側に連なって位置しており、
平面透視において、前記複数の放熱体は、前記複数の放熱体が連なった方向の熱伝導率より前記複数の放熱体が連なった方向に垂直に交わる方向の熱伝導率が大きいことを特徴とする請求項1に記載の電子素子搭載用基板。 - 前記第2基板の熱伝導率は、前記複数の放熱体が連なった方向における前記複数の放熱体の熱伝導率より大きいとともに、前記複数の放熱体が連なった方向に垂直に交わる方向における前記複数の放熱体の熱伝導率より小さいことを特徴とする請求項2に記載の電子素子搭載用基板。
- 前記複数の放熱体が連なった方向に垂直に交わる方向の縦断面視において、前記複数の放熱体は、前記複数の放熱体の厚み方向に垂直に交わる方向の熱伝導率より、前記複数の放熱体の厚み方向の熱伝導率が大きいことを特徴とする請求項2または3に記載の電子素子搭載用基板。
- 前記第1基板が矩形状であり、平面視において、前記複数の放熱体が前記第1基板の長手方向に連なって位置していることを特徴とする請求項2乃至請求項4のいずれかに記載の電子素子搭載用基板。
- 前記1または複数の搭載部の長手方向の縦断面視において、前記複数の放熱体は、厚み方向に垂直に交わる方向より厚み方向の熱伝導率が大きいことを特徴とする請求項1に記載の電子素子搭載用基板。
- 平面透視において、前記複数の放熱体は、前記第2基板の内側で縦横に位置していることを特徴とする請求項6に記載の電子素子搭載用基板。
- 平面透視において、前記複数の放熱体は、前記1または複数の搭載部の長手方向に長いことを特徴とする請求項6に記載の電子素子搭載用基板。
- 前記第4主面および前記第6主面に位置し、前記第4主面および前記第6主面と対向する第7主面、および該第7主面と相対する第8主面を有する第3基板を有していることを特徴とする請求項1乃至請求項8のいずれかに記載の電子素子搭載用基板。
- 請求項1乃至請求項9のいずれかに記載の電子素子搭載用基板と、
該電子素子搭載用基板の搭載部に搭載された電子素子と、
前記電子素子搭載用基板が搭載された配線基板または電子素子収納用パッケージとを有していることを特徴とする電子装置。 - 請求項10に記載の電子装置と、
該電子装置が接続されたモジュール用基板とを有することを特徴とする電子モジュール。
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