JP7189128B2 - 電子素子搭載用基板、電子装置および電子モジュール - Google Patents
電子素子搭載用基板、電子装置および電子モジュール Download PDFInfo
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- 239000003575 carbonaceous material Substances 0.000 claims description 8
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- 229910052751 metal Inorganic materials 0.000 description 57
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- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 229910021389 graphene Inorganic materials 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
また、本開示の電子素子搭載用基板は、単層または複数層の絶縁層からなり、第1主面および該第1主面と相対する第2主面を有した方形状である基板と、該基板に連なって埋め込まれ、炭素材料からなり、厚み方向における前記第1主面側に位置した第3主面および該第3主面と相対する第4主面を有する放熱体とを有しており、該放熱体は、前記放熱体が連なった方向の熱伝導より前記放熱体が連なった方向に垂直に交わる方向の熱伝導が大きく、前記放熱体における前記第3主面に重なる領域は、それぞれが1つの電子素子の搭載部を含んでおり、前記基板の熱伝導率は、平面方向と厚み方向とにおいて一定であり、前記基板の熱伝導率が、前記放熱体が連なった方向における前記放熱体の熱伝導率よりも大きい。
第1の実施形態における電子素子搭載用基板1は、図1~図4に示された例のように、基板11と基板11と放熱体12とを含んでいる。電子装置は、電子素子等用基板1と、電子素子搭載用基板の搭載部11bに搭載された電子素子2と、電子素子搭載用基板1が搭載された配線基板3とを含んでいる。電子装置は、例えば電子モジュールを構成するモジュール用基板上の接続パッドに接合材を用いて接続される。
次に、第2の実施形態による電子素子搭載用基板について、図5~図8を参照しつつ説明する。
次に、第3の実施形態による電子装置について、図9~図12を参照しつつ説明する。
次に、第4の実施形態による電子装置について、図13~図16を参照しつつ説明する。
次に、第5の実施形態による電子装置について、図17~図20を参照しつつ説明する。
次に、第6の実施形態による電子装置について、図21~図24を参照しつつ説明する。
次に、第7の実施形態による電子装置について、図26~図29を参照しつつ説明する。
次に、第8の実施形態による電子装置について、図31~図34を参照しつつ説明する。
Claims (8)
- 単層または複数層の絶縁層からなり、第1主面および該第1主面と相対する第2主面を有した方形状である基板と、
該基板に連なって埋め込まれ、炭素材料からなり、厚み方向における前記第1主面側に位置した第3主面および該第3主面と相対する第4主面を有する放熱体とを有しており、
該放熱体は、前記放熱体が連なった方向の熱伝導より前記放熱体が連なった方向に垂直に交わる方向の熱伝導が大きく、
前記放熱体における前記第3主面に重なる領域は、それぞれが1つの電子素子の搭載部を含んでおり、
前記放熱体が連なった方向における前記基板の熱伝導率が、前記放熱体が連なった方向における前記放熱体の熱伝導率よりも大きいことを特徴とする電子素子搭載用基板。 - 単層または複数層の絶縁層からなり、第1主面および該第1主面と相対する第2主面を有した方形状である基板と、
該基板に連なって埋め込まれ、炭素材料からなり、厚み方向における前記第1主面側に位置した第3主面および該第3主面と相対する第4主面を有する放熱体とを有しており、
該放熱体は、前記放熱体が連なった方向の熱伝導より前記放熱体が連なった方向に垂直に交わる方向の熱伝導が大きく、
前記放熱体における前記第3主面に重なる領域は、それぞれが1つの電子素子の搭載部を含んでおり、
前記基板の熱伝導率は、平面方向と厚み方向とにおいて一定であり、前記基板の熱伝導率が、前記放熱体が連なった方向における前記放熱体の熱伝導率よりも大きいことを特徴とする電子素子搭載用基板。 - 前記放熱体が連なった方向の縦断面視において、前記放熱体は、厚み方向に垂直に交わる方向より厚み方向の熱伝導が大きいことを特徴とする請求項1または2に記載の電子素子搭載用基板。
- 前記基板が矩形状であり、平面視において、前記放熱体が前記絶縁基板の長手方向に連なって位置していることを特徴とする請求項1乃至請求項3に記載の電子素子搭載用基板。
- 前記放熱体は、前記基板の厚み方向における前記第1主面側に前記第3主面が露出していることを特徴とする請求項1乃至請求項4のいずれかに記載の電子素子搭載用基板。
- 前記放熱体は、前記基板の厚み方向における前記第2主面側に前記第4主面が露出していることを特徴とする請求項1乃至請求項5のいずれかに記載の電子素子搭載用基板。
- 請求項1乃至請求項6のいずれかに記載の電子素子搭載用基板と、
該電子素子搭載用基板の搭載部に搭載された電子素子と、
前記電子素子搭載用基板が搭載された配線基板または電子素子収納用パッケージとを有していることを特徴とする電子装置。 - 請求項7に記載の電子装置と、
該電子装置が接続されたモジュール用基板とを有することを特徴とする電子モジュール。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008053586A1 (en) | 2006-11-02 | 2008-05-08 | Nec Corporation | Semiconductor device |
KR200452491Y1 (ko) | 2010-05-27 | 2011-03-03 | 주식회사 비에이치디스플레이 | 방열성이 우수한 엘이디용 인쇄회로기판 |
US20110157868A1 (en) | 2009-12-30 | 2011-06-30 | Harvatek Corporation | Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof |
JP2013243248A (ja) | 2012-05-21 | 2013-12-05 | Denso Corp | 半導体装置 |
JP2016157928A (ja) | 2015-02-23 | 2016-09-01 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 回路基板および回路基板の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7316061B2 (en) * | 2003-02-03 | 2008-01-08 | Intel Corporation | Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface |
WO2005117917A2 (en) * | 2004-04-07 | 2005-12-15 | Thermonix Llc | Thermal management system and computer arrangement |
CN100466895C (zh) * | 2005-12-15 | 2009-03-04 | 英业达股份有限公司 | 散热结构 |
JP2011159662A (ja) * | 2010-01-29 | 2011-08-18 | Toyota Central R&D Labs Inc | 半導体装置 |
JP5944690B2 (ja) | 2012-02-23 | 2016-07-05 | 京セラ株式会社 | 配線基板の製造方法 |
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- 2018-04-23 EP EP18791890.9A patent/EP3618583A4/en active Pending
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008053586A1 (en) | 2006-11-02 | 2008-05-08 | Nec Corporation | Semiconductor device |
US20110157868A1 (en) | 2009-12-30 | 2011-06-30 | Harvatek Corporation | Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof |
KR200452491Y1 (ko) | 2010-05-27 | 2011-03-03 | 주식회사 비에이치디스플레이 | 방열성이 우수한 엘이디용 인쇄회로기판 |
JP2013243248A (ja) | 2012-05-21 | 2013-12-05 | Denso Corp | 半導体装置 |
JP2016157928A (ja) | 2015-02-23 | 2016-09-01 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 回路基板および回路基板の製造方法 |
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CN110495258B (zh) | 2022-06-14 |
WO2018199022A1 (ja) | 2018-11-01 |
EP3618583A4 (en) | 2021-01-20 |
US20200144153A1 (en) | 2020-05-07 |
JP2022180570A (ja) | 2022-12-06 |
EP3618583A1 (en) | 2020-03-04 |
CN110495258A (zh) | 2019-11-22 |
US20240203818A1 (en) | 2024-06-20 |
JPWO2018199022A1 (ja) | 2020-02-27 |
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