CN111108594B - 电子元件搭载用基板及电子装置 - Google Patents
电子元件搭载用基板及电子装置 Download PDFInfo
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- CN111108594B CN111108594B CN201880060876.1A CN201880060876A CN111108594B CN 111108594 B CN111108594 B CN 111108594B CN 201880060876 A CN201880060876 A CN 201880060876A CN 111108594 B CN111108594 B CN 111108594B
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
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- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
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- H01L23/02—Containers; Seals
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/00—Printed circuits
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- H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
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- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/184—Components including terminals inserted in holes through the printed circuit board and connected to printed contacts on the walls of the holes or at the edges thereof or protruding over or into the holes
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
- H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K2201/09—Shape and layout
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- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10242—Metallic cylinders
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
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Abstract
电子元件搭载用基板具备:第一基板,呈矩形状,该第一基板具有第一主面且具有位于该第一主面的电子元件的搭载部;和第二基板,位于与第一主面相对的第二主面,包含碳材料,且呈矩形状,具有与第二主面对置的第三主面及与该第三主面相对的第四主面,第三主面或者第四主面的长度方向的热传导比与长度方向垂直相交的方向的热传导大,而且该第二基板在第四主面包括凹部。
Description
技术领域
本发明涉及电子元件搭载用基板及电子装置。
背景技术
以往,电子元件搭载用基板具有:具有第一主面、第二主面与侧面的绝缘基板;和被设置在绝缘基板的第一主面的电子元件的搭载部及布线层。在电子元件搭载用基板中,在将电子元件搭载到电子元件的搭载部后,搭载于电子元件搭载用封装件而成为电子装置。例如,在作为电子元件而搭载了LD(Laser Diode)、LED(Light Emitting Diode)等的光元件的情况下,由于存在若温度上升、则发光量降低这样的特性,故需要实施散热对策来抑制温度上升。相对于此,施行在散热片(也称为“散热构件”。)上固定搭载LED元件的基板,将在LED元件产生的热向散热片散发的对策(参照日本特开2014-120502号公报。)。
发明内容
本公开的电子元件搭载用基板具备:第一基板,呈矩形状,该第一基板具有第一主面且具有位于该第一主面的电子元件的搭载部;和第二基板,位于与所述第一主面相对的第二主面,包含碳材料,且呈矩形状,具有与所述第二主面对置的第三主面及与该第三主面相对的第四主面,所述第三主面或者所述第四主面的长度方向的热传导比与长度方向垂直相交的方向的热传导大,而且该第二基板在所述第四主面包括凹部。
本公开的电子装置具有:上述结构的电子元件搭载用基板;被搭载于该电子元件搭载用基板的所述搭载部的电子元件;以及位于所述凹部的传热体。
附图说明
图1的(a)是表示第一实施方式中的电子元件搭载用基板的俯视图,(b)是(a)的仰视图。
图2是将图1所示出的电子元件搭载用基板分解成第一基板与第二基板的立体图。
图3的(a)是图1的(a)所示出的电子元件搭载用基板的A-A线处的纵剖视图,(b)是B-B线处的纵剖视图。
图4的(a)是表示将电子元件搭载于图1的(a)所示出的电子元件搭载用基板并将散热片刨除的电子装置的俯视图,(b)是(a)的B-B线处的包括散热片的纵剖视图。
图5的(a)是表示第二实施方式中的电子元件搭载用基板的俯视图,(b)是(a)的仰视图。
图6的(a)是图5的(a)所示出的电子元件搭载用基板的A-A线处的纵剖视图,(b)是B-B线处的纵剖视图。
图7的(a)是表示第二实施方式中的将电子元件搭载用基板及散热片刨除的电子装置的其他例的俯视图,(b)是(a)的B-B线处的包括散热片的纵剖视图。
图8的(a)是表示第三实施方式中的电子元件搭载用基板的俯视图,(b)是(a)的仰视图。
图9的(a)是图8的(a)所示出的电子元件搭载用基板的A-A线处的纵剖视图,(b)是B-B线处的纵剖视图。
图10的(a)是表示将电子元件搭载于图8的(a)所示出的电子元件搭载用基板并将散热片刨除的电子装置的俯视图,(b)是(a)的B-B线处的包括散热片的纵剖视图。
具体实施方式
参照附图来说明本公开的几个例示性的实施方式。
(第一实施方式)
第一实施方式中的电子元件搭载用基板1如图1~图4所示出的例子那样,包括第一基板11和具有凹部12a的第二基板12。电子装置包括电子元件等用基板1和被搭载在电子元件搭载用基板的搭载部11a的电子元件2。
第一实施方式中的电子元件搭载用基板1具备:矩形状的第一基板11,其具有第一主面111,且具有位于第一主面111的电子元件2的搭载部11a;以及第二基板12,其位于与第一主面111相对的第二主面112且包含碳材料、呈矩形状并与具有第二主面112对置的第三主面121及与第三主面121相对的第四主面122,在平面透视下,第三主面121或者第四主面122的长度方向的热传导比与长度方向垂直相交的方向的热传导大,而且在第四主面包括凹部12a。第一基板11在表面具有金属层13。在图4中,电子元件2被安装于虚拟的xyz空间中的xy平面。在图1~图4中,上方向指的是虚拟的z轴的正方向。需要说明的是,以下的说明中的上下的区别是为了方便,并未限定实际上使用电子元件搭载用基板1等之际的上下。
金属层13在图1~图4所示的例子中,以网格点表示。对于第一基板11,在图2的(a)所示的例子中,以虚线来表示斜视下变为不可见的第一基板11的外表面。对于第二基板12,在图2的(b)所示的例子中,以虚线来表示在斜视下变为不可见的第一基板11的外表面及凹部12a的内侧面。
第一基板11包含单层或者多层的绝缘层,具有第一主面111(图1~图4中为上表面)及第二主面112(图1~图4中为下表面)。第一基板11在图1~图4所示的例子中,包含单层的绝缘层。第一基板11在俯视中具有矩形板状的形状,相对于第一主面111及第二主面112分别具有两组对置的边(四边)。第一基板11在第一主面111具有搭载电子元件2的搭载部11a,在图1~图4所示的例子中,在俯视中是一个方向上较长的长方形。第一基板11作为用于支承电子元件2的支承体发挥功能,经由接合构件而将电子元件2分别粘接固定到第一基板11的位于第一主面111的搭载部11a上。
第一基板11例如能够使用氧化铝质烧结体(氧化铝陶瓷)、氮化铝质烧结体、莫来石质烧结体或者玻璃陶瓷烧结体等的陶瓷。第一基板11例如如果是氮化铝质烧结体的情况下,那么在氮化铝(AlN)、氧化铒(Er2O3)、氧化钇(Y2O3)等的原料粉末中添加混合适当的有机粘合剂及溶剂等来制作泥浆物。通过采用以往公知的刮浆刀法或者砑光辊法等将该泥浆物成型为片状来制作陶瓷生片。根据需要,将多张陶瓷生片层叠,在高温(约1800℃)下对陶瓷生片进行烧成,由此能制作包含单层或者多个绝缘层的第一基板11。
第二基板12具有第三主面121(图1~图4中为上表面)及第四主面122(图1~图4中为下表面)。第二基板12在俯视中具有矩形板状的形状,相对于第三主面121及第四主面122分别具有两组对置的边(四边)。
第二基板12例如包含碳材料,形成为将六元环通过共价键而相连的石墨烯(graphene)层叠而得的构造体。是各面通过范德华力而被键合的材料。
第二基板12具有朝第四主面122侧开口的凹部12a。在第一实施方式的电子元件搭载用基板1中,凹部12a从第二基板12的第四主面122侧开口到第二基板12的厚度方向的中途为止。凹部12a在平面透视下,与第一基板11的位于第一主面111的搭载部11a重叠,能够成为散热性优异的结构。第二基板12的凹部12a例如能够通过对第二基板12的第四主面122侧实施激光加工、螺丝孔加工等来形成。凹部12a是用于配置散热性优异的传热体4的区域。
第一基板11优选地使用热传导率优异的氮化铝质烧结体。第一基板11与第二基板12通过包含TiCuAg合金、TiSnAgCu合金等的活性钎焊料的接合材料而被粘接成:第一基板11的第二主面112与第二基板12的第三主面121对置。接合材料在第一基板11与第二基板12之间配置为数10μm左右的厚度。
第一基板11的基板厚度T1例如为50μm~500μm左右,第二基板12的基板厚度T2例如为100μm~2000μm左右。第一基板11与第二基板12,若T2>T1,则能够将第一基板11的热良好地散热至第二基板12。
第一基板11的热传导率κ,如图2所示的例子那样,在平面方向上的X方向与Y方向大致固定,在第一基板11的平面方向与厚度方向上也大致固定(κx≈κy≈κz)。例如,在作为第一基板11而使用氮化铝质烧结体的情况下,第一基板11使用100~200W/m·K左右的热传导率κ的第一基板11。
第二基板12的热传导率λ在平面方向上的X方向与Y方向,其大小是不同的。例如,第二基板12在各个方向上的热传导率λx、λy、λz的关系如图2所示那样,为“热传导率λy≈热传导率λz>>热传导率λx”。例如,第二基板12的热传导率λy及热传导率λz为1000W/m·K左右,第二基板12的热传导率λx为4W/m·K左右。需要说明的是,在本公开的实施方式中的附图及后述实施方式的附图中,为了方便,包括将热传导率κx、κy、κz、λx、λy、λz中任一个省略的情况。
本公开的实施方式的电子元件搭载用基板1的热传导率例如能够通过激光闪光法等的分析方法来测定。再有,在测定第二基板12的热传导率的情况下,能够将对第一基板11与第二基板12进行接合的接合材料除去,通过激光闪光法等的分析方法对第二基板12进行测定。
第二基板12被配置成:第一基板11的相对于长度方向的热传导率λy及第二基板12的厚度方向的热传导率λz要比第一基板11的与长度方向垂直相交的方向的热传导率λx大。
金属层13位于第一基板11的第一主面111,以使得在俯视(平面透视)中在第一基板11的长度方向上将第二基板12夹持。再者,在俯视(平面透视)中金属层13与第二基板12交替地位于第一基板11的长度方向上。金属层13例如被用作为电子元件2的电极与接合引线等连接构件3的连接部。
金属层13包括薄膜层及镀层。薄膜层,例如具有密接金属层与阻挡层。构成薄膜层的密接金属层位于第一基板11的第一主面111。密接金属层,例如由氮化钽、镍-铬、镍-铬-硅、钨-硅、钼-硅、钨、钼、钛、铬等形成,通过采用蒸镀法、离子镀覆法、溅射法等的薄膜形成技术而被第一基板11的第一主面111所覆盖。例如在使用真空蒸镀法来形成的情况下,将第一基板11设置于真空蒸镀装置的成膜室内,在成膜室内的蒸镀源配置成为密接金属层的金属片,然后使成膜室内呈真空状态(10-2Pa以下的压力),并且加热被配置在蒸镀源的金属片并进行蒸镀,使第一基板11覆盖该蒸镀过的金属片的分子,由此形成成为密接金属层的薄膜金属层。而且,使用光刻法在形成有薄膜金属层的第一基板11形成抗蚀剂图案后,通过蚀刻将多余的薄膜金属层除去,由此形成密接金属层。密接在金属层的上表面覆盖阻挡层,阻挡层起到密接金属层与镀层的接合性、润湿性优良且使密接金属层与镀层牢固地接合,并且防止密接金属层与镀层的相互扩散的作用。阻挡层,例如由镍-铬、铂、钯、镍、钴等形成,通过蒸镀法、离子镀覆法、溅射法等的薄膜形成技术而覆盖于密接金属层的表面。
密接金属层的厚度优选为0.01~0.5μm左右。低于0.01μm,则存在使密接金属层牢固地密接于第一基板11上变得困难的倾向。超过0.5μm的情况下,则因密接金属层的成膜时的内部应力而容易产生密接金属层的剥离。再有,阻挡层的厚度优选为0.05~1μm左右。低于0.05μm,在存在产生小孔等的缺陷而难以实现作为阻挡层的功能的倾向。超过1μm的情况下,则因成膜时的内部应力而容易产生阻挡层的剥离。
镀层通过电解镀覆法或者无电解镀覆法而覆盖于薄膜层的表面。镀层包含镍、铜、金或者银等的耐腐蚀性、与连接构件的连接性优异的金属,例如,依次覆盖厚度0.5~5μm左右的镍镀层与0.1~3μm左右的金镀层。由此,可有效地抑制金属层13腐蚀,并且使得电子元件2与金属层13的接合、或者金属层13与连接构件3的接合牢固。
还有,当然也可以在阻挡层上配置铜(Cu)、金(Au)等的金属层,以良好地形成镀层。上述那样的金属层通过与薄膜层同样的方法来形成。
在金属层13向第一基板11的第一主面111的形成、及金属镀层向金属层13上的形成之际,若预先使包含树脂、陶瓷、金属等的保护膜位于第二基板12的露出的侧面及第四主面122,则在电子元件搭载用基板1的制作时包含碳材料的第二基板12不会剥落,因此能够减少药品等造成的变质。
可以在位于电子元件搭载用基板1的第一主面111侧的搭载部11a上,搭载电子元件2,并使传热体4位于该电子元件搭载用基板1的凹部12a,由此来制作电子装置。被搭载于电子元件搭载用基板1的电子元件2,例如是LD(Laser Diode),LED(Light EmittingDiode)等的发光元件,PD(Photo Diode)等的受光元件。例如,电子元件2搭载于例如搭载部11a上,经由焊料凸块、金凸块或者导电性树脂(各向异性导电树脂等)等的连接构件3而将电子元件2的电极与金属层13电连接,从而被搭载于电子元件搭载用基板1。或者,通过Au-Sn等的接合材料,被固定到搭载部11a上后,经由接合引线等的连接构件3而将电子元件2的电极与金属层13电连接,由此被搭载于电子元件搭载用基板1。
传热体4或者散热片5,例如包含铜(Cu)、铜-钨(CuW)、铜-钼(CuMo)等的热传导率优异的材料。传热体4或者散热片5的热传导率κ2在平面方向上的X方向与Y方向是大致固定的,在传热体4或者散热片5的平面方向与厚度方向上也是大致固定的(κ2x≈κ2y≈κ2z)。传热体4或者散热片5的热传导率κ2比第一基板11的热传导率κ大(κ2x>κx,κ2y>κy,κ2z>κz)。
根据本公开的实施方式中的电子元件搭载用基板1,具备:矩形状的第一基板11,具有第一主面111,且具有位于第一主面111的电子元件2的搭载部;和第二基板12,位于与第一主面111相对的第二主面112并包含碳材料,呈矩形状,具有与第二主面112对置的第三主面121及与第三主面121相对的第四主面122,在平面透视下,第三主面121或者第四主面122的长度方向的热传导比与长度方向垂直相交的方向的热传导大,且在第四主面包括凹部12a,由此例如在电子装置的动作时,从电子元件2产生的热经由第一基板11及厚度减小的第二基板12的第三主面121与凹部12a的底面之间,而易于向位于凹部12a的传热体4传导,再者在第二基板12的长度方向容易传热,容易从电子元件2的搭载部11a向周围散热,通过抑制从电子元件2产生的热造成的电子元件2的误动作,从而能够使电子装置良好地动作。
特别是,作为电子元件2而搭载LD、LED等的光元件的情况下,因为能够经由传热体4而使散热片5可靠地传热,所以通过抑制电子元件搭载用基板1的变形,从而能够提供一种能高精度地释放出光的光学装置用的电子元件搭载用基板1。
本公开的实施方式中的电子元件搭载用基板1,能够优选地使用于薄型且高输出的电子装置中,能够提高电子元件搭载用基板1中的可靠性。例如,在作为电子元件2而搭载LD、LED等的光元件的情况下,能够作为薄型且指向性优异的光学装置用的电子元件搭载用基板1而优选地使用。
第二基板12,如图1~图4所示的例子那样,在平面透视下,若比搭载部11a大(比电子元件2大),则传导到第二基板12的电子元件2的热沿着第一基板11的长度方向易于在第二基板12中良好地被传导,能够经由传热体4而向外部可靠地传热。
根据本公开的实施方式的电子装置,通过具有上述结构的电子元件搭载用基板1和被搭载在电子元件搭载用基板1的搭载部11a的电子元件2,从而能够设为长期可靠性优异的电子装置。
(第二实施方式)
接下来,参照图5~图7来说明第二实施方式的电子元件搭载用基板。
在第二实施方式的电子装置中,和上述实施方式的电子装置不同之处在于,凹部12a的内壁面为螺丝形状。在第二实施方式中,金属层13在图5~图7所示的例子中,以网格点来表示。凹部12a在第二基板12的第四主面122侧开口,凹部12a将内壁面做成螺丝形状。需要说明的是,在本公开的实施方式中的图及后述的实施方式的图中,为了方便,包括将热传导率κx、κy、κz、λx、λy、λz中任一者省略掉的情况。
根据第二实施方式中的电子元件搭载用基板1,和上述实施方式的电子元件搭载用基板1同样,例如在电子装置的动作时,从电子元件2产生的热,经由第一基板11及厚度减小的第二基板12的第三主面121与凹部12a的底面之间,易于向位于凹部12a的传热体4传导,再者在第二基板12的长度方向容易传热,容易从电子元件2的搭载部11a向周围散热,抑制从电子元件2产生的热引起的电子元件2的误动作,由此能够使电子装置良好地动作。
另外,通过使传热体4位于内壁面为螺丝形状的凹部12a内,从而能够提供一种使第二基板12的凹部12a的内壁面与传热体4优选地接触、能经由传热体4而使外部的散热片5可靠地传热的电子元件搭载用基板。
第一基板11与第二基板12通过包含TiCuAg合金、TiSnAgCu合金等的活性钎焊料的接合材料而被粘接,以使得第一基板11的第二主面112与第二基板12的第三主面121对置。在第一基板11与第二基板12之间,以数10μm左右的厚度配置接合材料。
第二基板12的凹部12a,例如能够通过螺丝孔加工等而形成于第二基板12。
在第二实施方式的电子元件搭载用基板1中,第一基板11的基板厚度T1,例如为50μm~500μm左右,第二基板12的基板厚度T2,例如为100μm~2000μm左右。若第一基板11的基板厚度T1与第二基板12的基板厚度T2为T2>T1,则能够将第一基板11的热向第二基板12良好地散发。
第一基板11,在图5~图7所示的例子中,在第一主面111具有搭载多个电子元件2各个的多个搭载部11a。平面透视下,第一基板11及第二基板12是在多个电子元件2的排列(搭载部11a的排列)的方向上较长的长方形。位于第二基板12的凹部12a,在平面透视下,与多个搭载部11a的一部分重叠。
此外,如图5~图7所示的例子那样,在将多个电子元件2搭载于第一基板11的第一主面111上的情况下,传导到第二基板12的热,相比于与第二基板12的长度方向垂直相交的方向,在第二基板12的长度方向更容易被传导,热变得容易向凹部12a侧传导,经由位于凹部12a的传热体4,向外部良好地散发。
第二实施方式的电子元件搭载用基板1,能够使用和上述实施方式的电子元件搭载用基板1同样的制造方法来制作。
(第三实施方式)
接下来,参照图8~图10来说明第三实施方式的电子装置。
在第三实施方式的电子元件搭载用基板1中,和上述实施方式的电子元件搭载用基板1不同之处在于,第三基板14位于第二基板12的第四主面122,该第三基板具有与第四主面122对置的第五主面141及与第五主面141相对的第六主面142。在第三实施方式中,金属层13在图8及图9所示的例子中以网格点来表示。第一基板11在图8及图9所示的例子中,以虚线来表示在平面透视下与凹部12a重叠的区域。需要说明的是,本公开的实施方式中的图及后述的实施方式的图中,为了方便,包括将热传导率κx、κy、κz、λx、λy、λz中任一者省略掉的情况。
第三基板14,在俯视中具有矩形板状的形状,即相对于第五主面141及第六主面142分别具有两组对置的边(四边)。再有,第三基板14具有与第二基板12的凹部12a对置的、在厚度方向贯通的贯通孔14a。
根据第三实施方式中的电子元件搭载用基板1,和上述实施方式的电子元件搭载用基板1同样,例如在电子装置的动作时,从电子元件2产生的热,经由第一基板11及厚度减小的第二基板12的第三主面121与凹部12a的底面之间,易于向位于凹部12a的传热体4传导,再者在第二基板12的长度方向容易传热,容易从电子元件2的搭载部11a向周围散热,抑制从电子元件2产生的热引起的电子元件2的误动作,由此能够使电子装置良好地动作。
第一基板11在图8~图10所示的例子中,在第一主面111具有搭载多个电子元件2各个的多个搭载部11a。在平面透视下,第一基板11、第二基板12、第三基板14是在多个电子元件2的排列(搭载部11a的排列)的方向上较长的长方形。位于第二基板12的凹部12a及位于第三基板14的贯通孔14a,在平面透视中与多个搭载部11a的一部分重叠,能够使得散热性优异。
第三基板14和第一基板11同样地,优选地使用热传导率优异的氮化铝质烧结体。第三基板14的热传导率κ,和第一基板11同样地,在平面方向上的X方向与Y方向是大致固定的,在第一基板11的平面方向与厚度方向上也是大致固定的。对于第一基板11与第二基板12而言,通过包含TiCuAg合金、TiSnAgCu合金等的活性钎焊料的接合材料将第一基板11的第二主面112与第二基板12的第三主面121粘接。再有,通过包含TiCuAg合金、TiSnAgCu合金等的活性钎焊料的接合材料将第二基板的第四主面122与第三基板14的第五主面141粘接。接合材料以数10μm左右的厚度被配置于第一基板11与第二基板12之间及第二基板12与第三基板14之间。
在第三实施方式的电子元件搭载用基板1中,第一基板11的基板厚度T1,例如为50μm~500μm左右,第二基板12的基板厚度T2,例如为100μm~2000μm左右,第三基板14的基板厚度T3,例如为50μm~500μm左右。若第一基板11的基板厚度T1与第二基板12的基板厚度T2为T2>T1,则能够将第一基板11的热向第二基板12良好地散发。
另外,第一基板11与第三基板14各自的材料通过同样的材料来形成,例如,在第一基板11包含热传导率κ为200W/m·K的氮化铝质烧结体的情况下,第三基板14设为包含热传导率κ3为200W/m·K的氮化铝质烧结体的基板(κx≈κ3x,κy≈κ3y,κz≈κ3z),若将第一基板11的基板厚度T1与第三基板14的基板厚度T3设为同等的厚度(0.9T1≤T3≤1.1T1),则因为隔着长度方向的热传导比与长度方向垂直相交的方向的热传导大的第二基板12来配置第一基板11与第三基板14,所以能够成为在电子装置的动作时减少电子元件搭载用基板1的变形、经由位于凹部12a内的传热体4而能够线外部良好地散热的电子元件搭载用基板1。
第三基板14的贯通孔14a的内壁面,如图8~图10所示的例子那样,当然也可以是螺丝形状。该情况下,能够提供一种能使第三基板14的贯通孔14a的内壁面与传热体4优选地接且能向外部的散热片5可靠地传热的电子元件搭载用基板。
此外,由于第三基板14的第五主面141位于第二基板12的第四主面122,故电子元件搭载用基板1不会成为第二基板12的第四主面122剥落掉的状态,在金属层13向第一基板11的第一主面111的形成、及金属镀层向金属层13上的形成之际,能够减少药品等造成的变质。再有,同样地在金属层13向第一基板11的第一主面111的形成、及金属镀层向金属层13上的形成之际,当然也可以预先使包含树脂、陶瓷、金属等的保护膜位于第二基板12的露出的侧面。
第三实施方式的电子元件搭载用基板1,能够使用和上述实施方式的电子元件搭载用基板1同样的制造方法来制作。
本公开并未被限定于上述的实施方式的例子,能够施以各种变更。例如,位于第一基板11的第一主面111的金属层13,在上述的例子中通过薄膜法来形成,当然也可以是使用了以往公知的共烧(Co-fire)法或者逐次烧制(post-fire)法等的金属层。在使用上述那样的金属层13的情况下,金属层13在第一基板11与第二基板12的接合前而预先被设置于第一基板11的第一主面111。需要说明的是,为了使得第一基板11的平面度良好,也可以是上述方法。
第一实施方式的电子元件搭载用基板1乃至第三实施方式的电子元件搭载用基板1,通过单层的绝缘层来形成,但当然也可以是绝缘层的层数不同的结构。例如,在第一实施方式~第三实施方式的电子元件搭载用基板1中,当然也可以通过两层以上的绝缘层来形成。
Claims (5)
1.一种电子元件搭载用基板,其特征在于,具备:
第一基板,该第一基板具有第一主面,包含陶瓷,在俯视下是一个方向上较长的矩形状,具有位于该第一主面的电子元件的搭载部;和
第二基板,位于与所述第一主面相对的第二主面,形成为将六元环通过共价键而相连的石墨烯层叠而得的构造体,包含所述石墨烯的各面通过范德华力而被键合的碳材料,且呈矩形状,具有与所述第二主面对置的第三主面及与该第三主面相对的第四主面,
所述第二基板被设置为:所述第一基板的平面的长边方向上的所述第二基板的热传导率λy与所述第二基板的厚度方向上的所述第二基板的热传导率λz相等,所述第一基板的长边方向上的所述第二基板的热传导率λy和所述第二基板的厚度方向上的所述第二基板的热传导率λz比与所述第一基板的平面的长边方向垂直的方向上的所述第二基板的热传导率λx大,
所述第二基板在所述第四主面包括凹部。
2.根据权利要求1所述的电子元件搭载用基板,其特征在于,
在平面透视下,所述凹部与所述搭载部重叠。
3.根据权利要求1或2所述的电子元件搭载用基板,其特征在于,
所述电子元件搭载用基板还具备:
第三基板,位于所述第四主面且呈矩形状,具有与所述第四主面相对的第五主面及与该第五主面相对的第六主面,该第三基板具有在厚度方向贯通且与所述凹部相对的贯通孔。
4.根据权利要求3所述的电子元件搭载用基板,其特征在于,
在平面透视下,所述贯通孔与所述搭载部重叠。
5.一种电子装置,其特征在于,具有:
权利要求1至权利要求4中任一项所述的电子元件搭载用基板;
电子元件,被搭载于该电子元件搭载用基板的所述搭载部;以及
传热体,位于所述凹部。
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