WO2019031408A1 - 電力変換装置 - Google Patents

電力変換装置 Download PDF

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Publication number
WO2019031408A1
WO2019031408A1 PCT/JP2018/029239 JP2018029239W WO2019031408A1 WO 2019031408 A1 WO2019031408 A1 WO 2019031408A1 JP 2018029239 W JP2018029239 W JP 2018029239W WO 2019031408 A1 WO2019031408 A1 WO 2019031408A1
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WO
WIPO (PCT)
Prior art keywords
terminal
semiconductor module
capacitor
switching element
current sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/029239
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English (en)
French (fr)
Japanese (ja)
Inventor
優 山平
哲矢 松岡
和馬 福島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to DE112018004127.1T priority Critical patent/DE112018004127B4/de
Priority to CN201880048435.XA priority patent/CN110959251B/zh
Publication of WO2019031408A1 publication Critical patent/WO2019031408A1/ja
Priority to US16/787,122 priority patent/US10932397B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53875—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter

Definitions

  • the present disclosure relates to a power converter in which a semiconductor module and a cooling pipe are stacked.
  • a power conversion device in which a stacked body is formed by stacking a semiconductor module having a switching element and a cooling pipe for cooling the semiconductor module (see Patent Document 1 below).
  • the semiconductor module includes a main body including the switching element and a power terminal protruding from the main body.
  • the power conversion device is configured to perform power conversion between, for example, direct current power and alternating current power by turning on and off the switching element.
  • the switching elements include an upper arm switching element disposed on the upper arm side and a lower arm switching element disposed on the lower arm side.
  • both an upper arm switching element and a lower arm switching element are often provided in one semiconductor module.
  • the power conversion device includes a capacitor that smoothes a DC voltage applied to the semiconductor module, and a current sensor that measures an output current of the semiconductor module.
  • a capacitor is disposed at a position adjacent to the laminate in the protruding direction of the power terminal (see FIG. 24).
  • the said power converter device has the subject that it is hard to cool components, such as a capacitor
  • both the upper arm switching element and the lower arm switching element are often provided in one semiconductor module.
  • the number of output power terminals i.e., output terminals
  • an output current always flows through the one output terminal. Therefore, the output terminal generates a large amount of heat, which is easily transmitted to the capacitor or the current sensor.
  • the capacitor when the capacitor is disposed at a position adjacent to the laminate in the protruding direction as in the power converter, the length in the protruding direction of the power converter is increased, which makes it difficult to miniaturize the power converter.
  • An object of the present disclosure is to provide a power conversion device capable of improving the cooling efficiency of a capacitor and a current sensor, and shortening the overall length of the device in the protruding direction of the power terminal.
  • a laminated body in which a semiconductor module incorporating a switching element and a cooling pipe for cooling the semiconductor module are laminated; A capacitor for smoothing a DC voltage applied to the semiconductor module; A current sensor for measuring the current flowing through the switching element;
  • the semiconductor module includes an upper arm semiconductor module disposed on the upper arm side and a lower arm semiconductor module disposed on the lower arm side, and the upper arm semiconductor module and the lower arm semiconductor module are stacked on each other. Alternately stacked in the stacking direction of the body, Each of the semiconductor modules has a main body having the switching element incorporated therein, and a plurality of power terminals protruding from the main body.
  • the capacitor is disposed on one side of the laminate in the orthogonal direction orthogonal to both the projecting direction of the power terminal and the stacking direction, and the current sensor is disposed on the other side.
  • a capacitor is disposed on one side of the laminate in the orthogonal direction, and a current sensor is disposed on the other side. Therefore, the capacitor and the current sensor can be brought close to the laminate, and the capacitor and the current sensor can be cooled by the cooling pipe in the laminate. Further, since the distance from the semiconductor module to the capacitor and the current sensor is shortened, the bus bar connecting these can be shortened. Therefore, the calorific value of the bus bar can be reduced, and the problem that the temperature of the capacitor or the like rises due to the heat can be suppressed.
  • the capacitors are disposed on one side of the laminate in the orthogonal direction and the current sensor is disposed on the other side, the capacitor, the laminate, and the current sensor are disposed overlapping in the projecting direction. Since the power conversion device disappears, the length of the power conversion device in the protruding direction can be shortened.
  • the semiconductor module on the upper arm side i.e., the upper arm semiconductor module
  • the semiconductor module on the lower arm side i.e., the lower arm semiconductor module
  • power terminals for output that is, output terminals
  • the output current can be alternately supplied to the output terminal on the upper arm side and the output terminal on the lower arm side, and the amount of heat generation of the output terminal can be reduced. Therefore, it is possible to suppress the problem that the heat is transmitted to the capacitor or the current sensor and the temperature rises.
  • FIG. 1 is a cross-sectional view of the power conversion device in the first embodiment.
  • FIG. 2 is a view of FIG. 1 from which the positive electrode bus bar is removed.
  • FIG. 3 is a diagram in which the negative bus bar is removed from FIG.
  • FIG. 4 is a cross-sectional view taken along line IV-IV of FIG.
  • FIG. 5 is a circuit diagram of the power conversion device in the first embodiment.
  • FIG. 6 is a plan view of the semiconductor module in the first embodiment.
  • 7 is a cross-sectional view taken along the line VII-VII of FIG.
  • FIG. 8 is a circuit diagram of the semiconductor module in the first embodiment.
  • FIG. 9 is a plan view of the semiconductor module in which the switching element and the free wheeling diode are separated in the first embodiment.
  • FIG. 10 is a circuit diagram of the power conversion device in the second embodiment.
  • FIG. 11 is a plan view of the semiconductor module in the second embodiment.
  • FIG. 12 is a plan view of the semiconductor module in which the switching element and the free wheeling diode are separated in the second embodiment.
  • FIG. 13 is a cross-sectional view of the power conversion device in the third embodiment.
  • FIG. 14 is an enlarged view of an essential part of FIG.
  • FIG. 15 is a plan view of the semiconductor module in the third embodiment.
  • FIG. 16 is a plan view of the collector terminal and the collector side heat sink in the third embodiment.
  • FIG. 17 is a plan view of an emitter terminal and an emitter-side heat sink in the third embodiment.
  • FIG. 18 is a circuit diagram of the semiconductor module in the third embodiment.
  • FIG. 19 is a circuit diagram of the power conversion device in the third embodiment.
  • FIG. 20 is an enlarged sectional view of an essential part of the power conversion device in the fourth embodiment.
  • FIG. 21 is a plan view of the semiconductor module in the fourth embodiment.
  • FIG. 22 is a circuit diagram of the semiconductor module in the fourth embodiment.
  • FIG. 23 is a circuit diagram of the power conversion device in the fifth embodiment.
  • FIG. 24 is a cross-sectional view of the power conversion device in the first comparative example.
  • FIG. 25 is a circuit diagram of a part of the power conversion device in the second comparative example.
  • the power conversion device 1 of the present embodiment includes a laminated body 10, a capacitor 3, and a current sensor 4.
  • the stacked body 10 is formed by stacking a semiconductor module and a cooling pipe 11.
  • the semiconductor module 2 incorporates the switching element 20.
  • the capacitor 3 smoothes the DC voltage applied to the semiconductor module 2.
  • the current sensor 4 measures the current flowing through the switching element 20 (in the present embodiment, the output current).
  • the upper arm semiconductor module 2 U and the lower arm semiconductor module 2 L, the lamination direction of the laminated body 10 (hereinafter, also referred to as X-direction) are alternately stacked on.
  • each semiconductor module 2 has a main body 21 incorporating the switching element 20 and a plurality of power terminals 22 projecting from the main body 21.
  • a capacitor 3 is disposed on one side of the laminate 10 in an orthogonal direction (hereinafter also referred to as a Y direction) orthogonal to both the projecting direction of the power terminal 22 (hereinafter also referred to as the Z direction) and the X direction
  • the current sensor 4 is disposed on the other side.
  • the power conversion device 1 of the present embodiment is a vehicle-mounted power conversion device to be mounted on a vehicle such as an electric vehicle or a hybrid vehicle.
  • the inverter circuit 100 is configured using a plurality of semiconductor modules 2.
  • the switching operation of the individual semiconductor modules 2 converts DC power supplied from the DC power supply 8 into AC power.
  • the three-phase alternating current motor 81 is driven using the obtained alternating current power, and the said vehicle is made to drive
  • the switching element 20 is an arm switching element 20 U on which is arranged in the upper arm, a lower arm switching element 20 L which are arranged on the lower arm side.
  • the upper arm semiconductor module 2 U has a built-in arm switching element 20 U over a plurality connected in parallel with each other.
  • the lower arm semiconductor module 2 L incorporates a plurality of lower arm switching elements 20 L connected in parallel to each other.
  • a free wheeling diode 23 is connected in antiparallel to each switching element 20.
  • the switching element 20 and the free wheeling diode 23 are formed on the same semiconductor chip 24 (see FIGS. 6 and 7).
  • an RC-IGBT Reverse Conducting IGBT
  • RC-IGBT Reverse Conducting IGBT
  • each of the semiconductor module 2 and a collector terminal 22 C and the emitter terminal 22 E.
  • Collector terminal 22 C of the upper arm semiconductor module 2 U is a positive terminal 22 P
  • the emitter terminal 22 E of the lower arm semiconductor module 2 L has a negative terminal 22 N.
  • the positive electrode bus bar 5 P is connected to the positive electrode terminal 22 P
  • the negative electrode bus bar 5 N is connected to the negative electrode terminal 22 N (see FIGS. 1 to 4).
  • the semiconductor module 2 is connected to the capacitor 3 through the bus bars 5 P and 5 N.
  • the emitter terminal 22 E of the upper arm semiconductor module 2 U, a collector terminal 22 C of the lower arm semiconductor module 2 L is adapted to the AC terminal 22 A.
  • the AC terminal 22 A AC bus bar 6 is connected (see FIGS. 1 to 4).
  • the current flowing through the AC bus bar 6 is measured by the current sensor 4.
  • the current sensor 4 transmits the measured value of the current to the control unit 7.
  • the control unit 7 uses this measured value for switching control of the semiconductor module 2.
  • the power terminal 22 has DC terminals 22 P and 22 N connected to the capacitor 3 and an AC terminal 22 A.
  • the current output from the AC terminal 22 A is measured by the current sensor 4.
  • Each semiconductor module 2 includes one DC terminal (that is, the positive electrode terminal 22 P or the negative electrode terminal 22 N ) and one AC terminal 22 A.
  • the direct current terminals 22 P and 22 N are disposed on the side of the capacitor 3 in the Y direction, and the alternating current terminal 22 A is disposed on the side of the current sensor 4 in the Y direction.
  • the capacitor 3 includes a capacitor element 30, a capacitor case 31, and a sealing member 32.
  • the capacitor element 30 is sealed in the capacitor case 31 by the sealing member 32.
  • the DC bus bars 5 P and 5 N are connected to the electrode surface 300 of the capacitor element 30.
  • the current sensor 4 includes a sensor element 40 and a holding unit 41 that holds the sensor element 40.
  • a Hall element, a GMR element or the like is used for the sensor element 40.
  • the semiconductor module 2 includes a main body 21 incorporating the switching element 20 and two power terminals 22 projecting from the main body 21.
  • the switching element 20 has its emitter side radiator plate 220 E, is sandwiched and the collector-side radiator plate 220 C.
  • Emitter side radiator plate 220 E is connected to the emitter electrode 26 E of the switching element 20
  • the collector-side radiator plate 220 C is connected to the collector electrode 26 C.
  • the heat sinks 220 E and 220 C are exposed from the main body 21.
  • the emitter terminal 22 E protrudes, a collector terminal 22 C from the collector side radiator plate 220 C is projected from the emitter side radiator plate 220 E.
  • two cooling pipes 11 adjacent in the X direction are connected by a connecting pipe 16.
  • the connecting pipe 16 is disposed at both ends of the cooling pipe 11 in the Y direction.
  • the end cooling pipe 11 a positioned at one end in the X direction, and the introduction pipe 13 for introducing the refrigerant 12, and the outlet pipe 14 for leading the refrigerant 12 Connected
  • the refrigerant 12 flows through all the cooling pipes 11 through the connection pipe 16 and is led out from the outlet pipe 14. Thereby, the semiconductor module 2 is cooled.
  • a pressure member 15 in this embodiment, a plate spring
  • the laminate 10 is pressurized in the X direction by using the pressurizing member 15.
  • the laminate 10 is fixed in the case 17 and the contact pressure between the semiconductor module 2 and the cooling pipe 11 is secured.
  • the capacitor 3 is disposed on one side of the laminate 10 in the Y direction, and the current sensor 4 is disposed on the other side. Therefore, the capacitor 3 and the current sensor 4 can be brought close to the laminate 10, and the capacitor 3 and the current sensor 4 can be cooled by the cooling pipe 11 in the laminate 10. Further, since the distance from the semiconductor module 2 to the capacitor 3 and the current sensor 4 is shortened, the bus bars 5 and 6 connecting these can be shortened. Therefore, the amount of heat generation of the bus bars 5 and 6 can be reduced, and the problem that the temperature of the capacitor 3 or the current sensor 4 rises due to this heat can be suppressed.
  • the capacitor 3 is disposed at a position adjacent to the laminate 10 in the Z direction.
  • the power terminal 22 becomes an obstacle, making it difficult for the capacitor 3 to be brought close to the cooling pipe 11, and it is difficult to efficiently cool the capacitor 3.
  • the heat generation amount of the DC bus bars 5 P and 5 N is large, and the temperature of the capacitor 3 is likely to rise.
  • the capacitor 3 can be brought closer to the cooling pipe 11 to cool the capacitor 3. It will be easier.
  • the DC bus bars 5 P and 5 N can be shortened, the amount of heat generation of the DC bus bars 5 P and 5 N can be reduced, and the temperature rise of the capacitor 3 can be suppressed.
  • the power converter 1 can be easily enlarged.
  • the capacitor 3 is disposed on one side of the laminate 10 in the Y direction as in the present embodiment and the current sensor 4 is disposed on the other side, Z of the power conversion device 1 Direction length can be shortened. Therefore, the power converter 1 can be miniaturized.
  • the upper arm semiconductor module 2U and the lower arm semiconductor module 2L are separated. That, is provided with the upper arm switching element 20 U and the lower arm switching element 20 L to another semiconductor module 2. Therefore, the upper arm semiconductor module 2 U and the lower arm semiconductor module 2 L, it is possible to form the AC terminals 22 A, respectively. Therefore, current flows alternately between the upper arm side alternating current terminal 22 AU and the lower arm side alternating current terminal 22 AL, and the amount of heat generation of the alternating current terminal 22 A can be reduced. Therefore, the problem that the heat is transmitted to the capacitor 3 and the current sensor 4 and the temperature rises can be suppressed.
  • the upper arm switching element 20 U and the lower arm switching element 20 L are provided in different semiconductor modules 2 as in this embodiment, the upper arm switching element 20 U
  • the AC terminal 22 AU and the AC terminal 22 AL for the lower arm switching element 20 L can be separated. Therefore, when the upper arm switching element 20U is turned on, current flows only in the AC terminal 22AU on the upper arm side, and when the lower arm switching element 20L is turned on, current flows only in the AC terminal 22AL on the lower arm side. Therefore, the resistance heat generated from each of the AC terminals 22 AU and 22 AL can be reduced, and the heat can be prevented from being transmitted to the current sensor 4 or the like to increase the temperature.
  • the power conversion device 1 of the present embodiment has the effect of cooling the capacitors 3 and the like by arranging the capacitors 3 and the current sensor 4 at positions adjacent to the stacked body 10 in the Y direction;
  • module 2 U and lower arm semiconductor module 2 L separate, the calorific value of AC terminals 22 AU and 22 AL is reduced, and the effect of suppressing the temperature rise of capacitor 3 etc. is exhibited synergistically. be able to. This makes it possible to cool the capacitor 3 and the current sensor 4 with high efficiency.
  • the semiconductor module 2 also includes a plurality of switching elements 20 connected in parallel to each other as shown in FIGS. 5 and 8.
  • the switching element 20 can be switched at high speed, and the amount of heat generation of the switching element 20 can be reduced. That is, as shown in FIG. 25, conventionally, for example, two lower arm switching elements 20 LA and 20 LB are provided in separate semiconductor modules 2, and these two lower arm switching elements 20 LA and 20 LB are It was connected by N. In this case, the current i flowing through the first lower arm switching element 20 LA and the current passing through the negative bus bar 5 N and the second lower arm switching element 20 LB for the reason that the negative bus bar 5 N is not completely symmetrical.
  • inductances L (L A , L B ) having different values may be parasitic on the two switching elements 20 LA , 20 LB.
  • the potentials V EA and V EB of the emitters of the two lower arm switching elements 20 LA and 20 LB differ from each other.
  • the DC terminals 22 P and 22 N of the semiconductor module 2 are disposed on the side of the capacitor 3 in the Y direction, and the AC terminal 22 A is a current sensor 4 in the Y direction. It is placed on the side. Therefore, the Y-direction length of DC bus bars 5 P and 5 N connecting DC terminals 22 P and 22 N and capacitor 3 can be shortened. Further, the Y-direction length of the AC bus bar 6 from the AC terminal 22A to the current sensor 4 can be shortened. Therefore, the resistance heat generated from these bus bars 5 and 6 can be reduced, and the temperature rise of capacitor 3 and current sensor 4 can be further suppressed.
  • the switching element 20 and the free wheeling diode 23 are formed on the same semiconductor chip 24. Therefore, the semiconductor module 2 can be miniaturized. Therefore, the distance from the switching element 20 to each of the power terminals 22 C and 22 E can be shortened, and the parasitic inductance between them can be reduced. Therefore, the variation in inductance can be reduced, and the switching speed can be increased. Therefore, the loss of the switching element 20 can be reduced, and the heat generation of the semiconductor module 2 can be suppressed. Therefore, the heat of the semiconductor module 2 is transmitted to the capacitor 3 and the current sensor 4 to easily suppress the temperature rise.
  • the present embodiment it is possible to provide a power conversion device capable of improving the cooling efficiency of the capacitor and the current sensor, and shortening the overall length of the device in the protruding direction of the power terminal.
  • the RC-IGBT is used as the switching element 20, but the present invention is not limited to this, and a MOS-FET may be used.
  • the switching element 20 and the free wheeling diode 23 are formed on the same semiconductor chip 24, but the present invention is not limited to this. That is, as shown in FIG. 9, the switching element 20 and the free wheeling diode 23 may be separated.
  • the present embodiment is an example in which the configuration of the semiconductor module 2 is changed. As shown in FIGS. 10 and 11, in this embodiment, only one switching element 20 is incorporated in one semiconductor module 2. A free wheeling diode 23 is connected in antiparallel to each switching element 20. The switching element 20 and the free wheeling diode 23 are formed on the same semiconductor chip 24.
  • the semiconductor module 2 includes an upper arm semiconductor module 2 U and a lower arm semiconductor module 2 L.
  • the upper arm semiconductor modules 2 U and the lower arm semiconductor modules 2 L are alternately stacked (see FIG. 1).
  • the capacitor 3 is disposed on one side of the laminate 10 in the Y direction, and the current sensor 4 is disposed on the other side.
  • the other configurations and effects are the same as those of the first embodiment.
  • the switching element 20 and the free wheeling diode 23 are formed on the same semiconductor chip 24, but the present invention is not limited to this. That is, as shown in FIG. 12, the switching element 20 and the free wheeling diode 23 may be formed separately.
  • the present embodiment is an example in which the configuration of the semiconductor module 2 is changed.
  • one of the two types of semiconductor modules 2 of the upper arm semiconductor module 2U and the lower arm semiconductor module 2L (one upper arm semiconductor module in the present embodiment) 2 U ) includes two DC terminals 22 (positive electrode terminal 22 P ) and one AC terminal 22 A.
  • the other semiconductor module 2 (in the present embodiment, the lower arm semiconductor module 2 L ) includes two AC terminals 22 A and one DC terminal 22 (22 N ).
  • DC bus bars 5 P extend from the DC terminal 22 (22 PA ) closer to the capacitor 3 in the Y direction to the capacitor 3 side in the Y direction.
  • the two AC terminals 22 A of the lower arm semiconductor module 2 L are connected by the AC bus bar 6. Then, the alternating current bus bar 6 extends from the alternating current terminal 22 AA closer to the current sensor 4 in the Y direction among the two alternating current terminals 22 A to the current sensor 4 side in the Y direction.
  • the semiconductor module 2 of the present embodiment incorporates two switching elements 20 connected in parallel to each other. Two collector terminals 22 C and one emitter terminal 22 E protrude from the main body 21 of the semiconductor module 2. The emitter terminal 22 E, in the Y direction, is located between the two collector terminals 22 C. As shown in FIGS. 15 to 17, the semiconductor module 2 of this embodiment, similarly to Embodiment 1 includes a collector side radiator plate 220 C, and an emitter side radiator plate 220 E. Two collector terminals 22 C project from the collector side heat sink 220 C. Further, from the emitter side radiator plate 220 E, 1 present emitter terminals 22 E protrudes.
  • the two collector terminals 22 C of the upper arm semiconductor module 2 U to the positive terminal 22 P it is the one emitter terminal 22 E to the AC terminal 22 A.
  • two collector terminals 22 C of the lower arm semiconductor module 2 L are used as the alternating current terminal 22 A
  • one emitter terminal 22 E is used as the negative electrode terminal 22 N.
  • the DC bus bar 5 P is Y from the DC terminal 22 PA closer to the capacitor 3. It extends to the capacitor 3 side in the direction. In this way, out of the direct current bus bar 5 P, it is possible to shorten the Y direction length of the portion 59 for electrically connecting the DC terminals 22 P and the capacitor 3. Therefore, the resistance heat generated from this portion 59 can be reduced, and the temperature rise of the capacitor 3 can be further suppressed.
  • the AC bus bar 6 extends the current sensor 4 side in the Y-direction ing. In this way, it is possible to reduce the Y-direction length of the AC terminal 22 A and the current sensor 4 joins the portion 69 of the AC busbars 6. Therefore, the heat generated from the portion 69 can be reduced, and the temperature rise of the current sensor 4 can be further suppressed.
  • the other configurations and effects are the same as those of the first embodiment.
  • the present embodiment is an example in which the configuration of the semiconductor module 2 is changed.
  • the semiconductor module 2 of the present embodiment includes two emitter terminals 22 E of, one and a collector terminal 22 C of.
  • the collector terminal 22 C is disposed between the two emitter terminals 22 E.
  • the inductance L parasitic on the emitter of each switching element 20 can be equalized. Therefore, oscillation does not easily occur even when the switching element 20 is switched at high speed, and the loss of the switching element 20 can be reduced. Therefore, the amount of heat generation of the semiconductor module 2 can be reduced, and the problem that the heat is transmitted to the capacitor 3 and the current sensor 4 and the temperature rises can be suppressed.
  • the upper arm semiconductor module 2 U and the lower arm semiconductor module 2 L alternately.
  • the upper arm semiconductor module 2 U the two emitter terminals 22 E and AC terminal 22 A, there one collector terminal 22 C as the positive electrode terminal 22 P.
  • the two negative electrode terminals 22 N of the lower arm semiconductor module 2 L are connected by the negative electrode bus bar 5 N.
  • the negative electrode bus bar 5 N extends from the negative electrode terminal 22 NA closer to the capacitor 3 to the capacitor 3 side in the Y direction.
  • the length in the Y direction of the portion 58 connecting the negative electrode terminal 22 N and the capacitor 3 in the negative electrode bus bar 5 N can be shortened. Therefore, the heat generated from the portion 58 can be reduced, and the temperature rise of the capacitor 3 can be further suppressed.
  • the two AC terminals 22 A of the upper arm semiconductor module 2 U are connected by the AC bus bar 6.
  • One of the two AC terminals 22 A, the AC terminal 22 AA of the side close to the current sensor 4, the AC bus bars 6 are extended to the current sensor 4 side in the Y direction.
  • the portion 69 connecting the AC terminal 22 A and the current sensor 4 of the AC bus bar 6, it is possible to shorten the Y direction length. Therefore, the heat generated from the portion 69 can be reduced, and the temperature rise of the current sensor 4 can be further suppressed.
  • the other configurations and effects are the same as those of the first embodiment.
  • Embodiment 5 is an example in which the circuit configuration of the power conversion device 1 is changed.
  • the upper arm semiconductor module 2 U, and the lower arm semiconductor module 2 L, a capacitor 33, with a reactor 82, are configured to step-up circuit 101.
  • the voltage boosting circuit 101 is used to boost the voltage of the DC power supply 8, and the boosted DC power is output from the output terminals 83 and 84.
  • the other configurations and effects are the same as those of the first embodiment.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inverter Devices (AREA)
PCT/JP2018/029239 2017-08-11 2018-08-03 電力変換装置 Ceased WO2019031408A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112018004127.1T DE112018004127B4 (de) 2017-08-11 2018-08-03 Leistungsumwandlungsvorrichtung
CN201880048435.XA CN110959251B (zh) 2017-08-11 2018-08-03 电力转换装置
US16/787,122 US10932397B2 (en) 2017-08-11 2020-02-11 Power conversion device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-156257 2017-08-11
JP2017156257A JP6743782B2 (ja) 2017-08-11 2017-08-11 電力変換装置

Related Child Applications (1)

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