WO2018159678A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2018159678A1
WO2018159678A1 PCT/JP2018/007504 JP2018007504W WO2018159678A1 WO 2018159678 A1 WO2018159678 A1 WO 2018159678A1 JP 2018007504 W JP2018007504 W JP 2018007504W WO 2018159678 A1 WO2018159678 A1 WO 2018159678A1
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WIPO (PCT)
Prior art keywords
sealing material
semiconductor element
semiconductor device
wiring member
semiconductor
Prior art date
Application number
PCT/JP2018/007504
Other languages
English (en)
French (fr)
Inventor
創一 坂元
藤野　純司
裕史 川島
健寿 前田
Original Assignee
三菱電機株式会社
ミヨシ電子株式会社
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Publication date
Application filed by 三菱電機株式会社, ミヨシ電子株式会社 filed Critical 三菱電機株式会社
Priority to US16/485,183 priority Critical patent/US11004761B2/en
Priority to JP2019503063A priority patent/JP6719643B2/ja
Priority to DE112018001053.8T priority patent/DE112018001053T5/de
Priority to CN201880013261.3A priority patent/CN110326103B/zh
Publication of WO2018159678A1 publication Critical patent/WO2018159678A1/ja
Priority to US17/196,317 priority patent/US20210193546A1/en

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Definitions

  • the present invention relates to a semiconductor device, for example, a semiconductor device that handles high-frequency signals.
  • a high-frequency package is a semiconductor device that inputs and outputs signals with frequencies exceeding tens of MHz while amplifying and matching signals. With the demand for higher communication speed, there is a demand for higher output of semiconductor devices.
  • a package structure with high heat dissipation is required.
  • a base plate is used in which an insulating layer such as glass epoxy is attached to a heat dissipation plate made of a material with excellent heat dissipation, such as copper (Cu).
  • the glass epoxy layer is cut by machining or the like, the semiconductor element is die-bonded to the metal plate exposed in the concave portion of the metal base substrate, wiring is formed by wire bonding, and resin for dust prevention A package is formed by sealing.
  • Silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), gallium nitride (GaN), etc. which are base materials for semiconductor elements, have a thermal expansion coefficient in the range of about 3 ppm / K to 6 ppm / K. This value is significantly smaller than the thermal expansion coefficient (16 ppm / K) of Cu constituting the base plate used for heat dissipation. For this reason, cracks and the like may occur in the die bond portion that joins the semiconductor element and the base plate due to thermal stress generated in a die bonding step in the manufacturing process, a temperature cycle in reliability evaluation, and the like, and heat dissipation may be deteriorated.
  • Patent Document 1 proposes a method of sealing the periphery of an element mounted on a flip chip and other parts with materials having different physical properties.
  • Patent Document 2 discloses a method of ensuring reliability by sealing the periphery of a device with a hard epoxy and sealing the whole with a flexible urethane resin.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device with improved reliability against thermal stress.
  • a semiconductor device includes an insulating layer, a conductive layer bonded to one main surface of the insulating layer, and a semiconductor element disposed so that the one main surface and the upper surface of the insulating layer face the same direction.
  • a 2nd sealing material seals a wiring member so that a wiring member may be contacted.
  • the semiconductor element is sealed with the relatively hard first sealing material, so that peeling of the semiconductor element can be suppressed.
  • the wiring member is sealed with the relatively soft second sealing material, even when thermal stress is applied around the wiring member due to warping of the insulating layer and the conductive layer, It is possible to protect the wiring member from dust and reduce thermal stress on the wiring member. Therefore, the reliability of the semiconductor device can be improved.
  • the semiconductor element can be uniformly sealed by sealing the semiconductor element so that the first sealing material is in contact with the semiconductor element.
  • the wiring member can be uniformly sealed by sealing the wiring member so that the second sealing material is in contact with the wiring member. Therefore, the reliability of the semiconductor device can be further improved.
  • FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment.
  • 1 is a plan view of a semiconductor device according to a first embodiment.
  • FIG. 6 is a cross-sectional view of a semiconductor device according to a second embodiment.
  • FIG. 6 is a plan view of a semiconductor device according to a second embodiment.
  • FIG. 10 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment.
  • FIG. 10 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment.
  • FIG. 10 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment.
  • FIG. 10 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment.
  • FIG. 10 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment.
  • FIG. 6 is a cross-sectional view of a semiconductor device according to a third embodiment.
  • FIG. 6 is a plan view of a semiconductor device according to a third embodiment.
  • FIG. 10 is a cross-sectional view of a semiconductor device according to a modification example of the third embodiment.
  • FIG. 6 is a cross-sectional view of a semiconductor device according to a fourth embodiment.
  • FIG. 6 is a plan view of a semiconductor device according to a fourth embodiment.
  • FIG. 10 is a plan view of a semiconductor device according to a fifth embodiment.
  • FIG. 10 is a plan view of a semiconductor device according to a sixth embodiment.
  • FIG. 10 is a plan view of a semiconductor device according to a seventh embodiment.
  • FIG. 10 is a cross-sectional view of a semiconductor device according to a seventh embodiment.
  • FIG. 10 is a sectional view of a semiconductor device according to a seventh embodiment. It is a top view which shows typically an air bridge presence area
  • FIG. 38 is a plan view of a semiconductor device that is a modification of the seventh embodiment.
  • FIG. 29 is a cross-sectional view of a semiconductor device that is a modification of the seventh embodiment.
  • FIG. 1 is a cross-sectional view of the semiconductor device according to the first embodiment.
  • FIG. 2 is a plan view of the semiconductor device according to the first embodiment.
  • the cross section of the semiconductor device shown in FIG. 1 is a cross section taken along line AA in FIG. In FIG. 2, the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing.
  • the semiconductor device includes an insulating layer 32, a conductive layer 33, a heat sink 31, a semiconductor element 1, a plurality of wiring members 4, a first sealing material 71, and a second sealing. And a stopper 72.
  • the base substrate 3 includes a heat radiating plate 31, an insulating layer 32, and a conductive layer 33.
  • An insulating layer 32 is bonded to the upper surface of the heat sink 31.
  • a conductive layer 33 is bonded to the upper surface of the insulating layer 32.
  • the plurality of wiring members 4 include an input side wiring member 41 and an output side wiring member 42. When there is no particular distinction between the input side and the output side, they are simply referred to as wiring members 4.
  • the wiring member 4 includes a hollow portion 4a. As shown in FIG. 1, the hollow portion 4 a is a portion that exists between the portions used for joining both ends of the wiring member 4.
  • the conductive layer 33 is composed of a plurality of conductive patterns 331, 332, 333, and 334 separated from each other.
  • Each of the plurality of conductive patterns 331 includes an external electrode portion 331a to which a high frequency signal is input and a wiring member joint portion 331b.
  • Each of the plurality of conductive patterns 332 includes a wiring member joint portion 332a.
  • Each of the plurality of conductive patterns 333 includes an external electrode portion 333a that outputs a high-frequency signal.
  • Semiconductor element 1 is, for example, a power amplifier element for MHz band made of Si.
  • the semiconductor element 1 includes a plurality of upper surface electrodes 9 on the upper surface.
  • the upper surface electrode 9 includes an input-side upper surface electrode 91 and an output-side upper surface electrode 92. When the input side and the output side are not particularly distinguished, they are simply referred to as the upper surface electrode 9.
  • the upper surface electrode 9 is made of an alloy containing aluminum (Al), for example.
  • Al aluminum
  • the upper surface electrode 91 on the input side of the semiconductor element 1 and the conductive pattern 331 are electrically joined by the wiring member 41.
  • one end of the wiring member 41 is joined to the upper surface electrode 91 on the input side of the semiconductor element 1, and the other end of the wiring member 41 is joined to the wiring member joining portion 331 b of the conductive pattern 331.
  • the upper electrode 92 on the output side of the semiconductor element 1 and the conductive pattern 332 are electrically joined by the wiring member 42. That is, one end of the wiring member 42 is electrically joined to the upper electrode 92 on the output side of the semiconductor element 1, and the other end of the wiring member 42 is electrically joined to the wiring member joining portion 332 a of the conductive pattern 332.
  • the wiring member 4 is, for example, an Al wire having a diameter of 0.15 mm.
  • each of the plurality of conductive patterns 332 and the plurality of conductive patterns 333 is electrically connected via the electronic component 5 for adjusting the high frequency characteristics.
  • the external electrode portion 331a of the conductive pattern 331 is used as an external electrode of the semiconductor device.
  • the external electrode portion 333a of the conductive pattern 333 is used as an external electrode of the semiconductor device.
  • the semiconductor element 1 is sealed with a first sealing material 71.
  • the first sealing material 71 is, for example, an epoxy resin.
  • the expansion coefficient is adjusted to about 16 ppm / K by dispersing silica filler in the epoxy resin.
  • the surface of the semiconductor element 1 is sealed with the first sealing material 71.
  • the first sealing material 71 is in contact with the semiconductor element 1. Further, the upper surface of the conductive pattern 334 and the bonding material 2 are also sealed with the first sealing material 71.
  • the first sealing material 71 is also in contact with the conductive pattern 334 and the bonding material 2.
  • the second sealing material 72 seals the wiring element 4 and the semiconductor element 1 sealed with the first sealing material 71.
  • the second sealing material 72 is softer than the first sealing material 71.
  • the second sealing material 72 is, for example, a silicone gel.
  • the second sealing material 72 is in contact with the surface of the wiring member 4.
  • the cap 6 is fixed to the conductive layer 33 with the adhesive 61 so as to cover the semiconductor element 1, the wiring member 4, the first and second sealing materials 71 and 72, and the like.
  • the cap 6 is, for example, polyphenylene sulfide (PPS) resin.
  • the adhesive 61 is, for example, a silicone adhesive.
  • one semiconductor element 1 is arranged on the upper surface of the conductive pattern 334, but a plurality of semiconductor elements 1 may be arranged on the upper surface of the conductive pattern 334.
  • the semiconductor element 1 is a high-frequency power amplification element that amplifies the power of a high-frequency signal input via the input-side upper surface electrode 91 and outputs the amplified high-frequency signal from the output-side upper surface electrode 92.
  • the semiconductor element 1 mounted on the package of the semiconductor device according to the first embodiment may have not only the above-described power amplification function but also a high-frequency signal switching function.
  • a high frequency signal is a signal having a frequency exceeding several tens of MHz.
  • the semiconductor element 1 may be a MOS-FET (Metal Oxide Semiconductor) containing silicon or an LDMOS (Lateral Double Diffused MOSFET).
  • the semiconductor element 1 may be a GaAs-HFET (Heterostructure Field Effect Transistor) containing gallium arsenide phosphorus, which is a compound semiconductor, or a GaAs-HBT (Heterojunction Bipolar Transistor).
  • the semiconductor element 1 may be a GaN-HFET (Heterostructure Field Effect Transistor) containing gallium nitride.
  • Semiconductor elements made of gallium nitride which is a wide band gap semiconductor, have high electron speed, high breakdown voltage due to wide band gap, high power operation, wide operating bandwidth, high temperature operation, low cost, and small size It has various merits.
  • the plurality of semiconductor elements 1 may be the same semiconductor element or different semiconductor elements.
  • the heat sink 31 has a function of radiating a large amount of heat generated when the semiconductor element 1 is operating toward the outside. Heat release occurs by heat transfer to the air by convection and radiation and heat conduction through the object in contact. Therefore, the heat dissipation plate 31 is formed of a material having excellent thermal conductivity, and a heat sink (not shown) disposed on the surface of the heat dissipation plate 31 opposite to the semiconductor element 1 is cooled by air cooling, water cooling, or the like. The heat generated from 1 can be efficiently dissipated to the outside through the heat radiating plate 31.
  • the heat sink 31 made of Cu is used, but the material of the heat sink 31 is not limited to this.
  • the heat sink 31 may be, for example, a metal material such as iron (Fe), tungsten (W), molybdenum (Mo), nickel (Ni), or cobalt (Co), or an alloy material containing these metal materials. Good.
  • the heat sink 31 may be a composite material obtained by combining these metal materials or alloy materials.
  • An alloy of copper and tungsten is a composite material having both low thermal expansion of tungsten and high thermal conductivity of copper.
  • the thermal expansion coefficient can be adjusted according to the surrounding material.
  • copper-molybdenum alloy Cu-Mo
  • the thermal expansion coefficient and thermal conductivity can be adjusted by changing the composition ratio of molybdenum and copper.
  • a clad material having a three-layer structure in which Cu—Mo is used as a core material and Cu is bonded to both surfaces can also be used. Since the surface of this clad material is pure copper, the heat dispersion on the surface can be increased.
  • the insulating layer 32 is a glass epoxy substrate such as FR (Frame Regentant) -4, FR-5, or the like.
  • the insulating layer 32 may be an alumina substrate.
  • the conductive layer 33 is not particularly limited as long as it is a conductive material.
  • the conductive layer 33 may be made of a material mainly containing Cu, Al, or the like.
  • the conductive layer 33 may be formed by plating a conductive material such as Au or Ag on the insulating layer 32.
  • the wiring member joint portions 331b are separated from each other, but the wiring member joint portions 331b are not separated and are integrated. May be.
  • the distance and height between the upper surface electrode 9 of the semiconductor element 1 and the wiring member bonding portion 331b may be set, and the accuracy with respect to each wiring member bonding portion 331b is determined. High alignment is not necessary. Therefore, the time required for wire bonding can be shortened.
  • the shape of the wiring member joint portion 331b may be determined in consideration of the trade-off between the tact time during manufacturing and the reliability. Note that the shapes of the wiring member joint portions 332a of the plurality of conductive patterns 332 are also determined in consideration of a trade-off between tact time and reliability during manufacturing.
  • the number of conductive patterns 334 may be one or more as in the case of the semiconductor element 1, and the first embodiment describes the case where there is one conductive pattern 334.
  • a solder resist may be formed on the insulating layer 32 in order to control the wet spread range of the bonding material 51 for bonding the electronic component 5.
  • the base substrate 3 includes a heat radiating plate 31, an insulating layer 32, and a conductive layer 33.
  • the heat radiating plate 31 is joined to the insulating layer 32 via a fiber reinforced resin material such as an epoxy resin reinforced with glass cloth.
  • the softening temperature of the fiber reinforced resin material is desirably higher than the melting point of the bonding material 51.
  • the electronic component 5 is, for example, a chip resistor.
  • the chip resistor is mounted on the conductive layer 33 for adjusting the high frequency characteristics of the semiconductor element 1.
  • a chip resistor is mounted as the electronic component 5, but the electronic component 5 may be a chip capacitor, for example.
  • the electronic component 5 which mounts the conductive layer 33 should just be 1 or more.
  • the electronic components may be the same or different from each other.
  • the electronic component 5 is bonded to the conductive layer 33 by a bonding material 51.
  • the bonding material 51 is, for example, a solder paste.
  • the solder paste is not limited to Pb-based solder, but may be Pb-free solder such as SAC305.
  • the semiconductor element 1 is bonded to the conductive pattern 334 of the conductive layer 33 via the bonding material 2.
  • the bonding material 2 is a solder alloy such as Au—Sn, Au—Ge, or Au—Si.
  • the bonding material 2 is not limited to a low melting point solder alloy, and may be a conductive adhesive in which a metal filler having high thermal conductivity is dispersed.
  • the conductive adhesive can be die-bonded at a low temperature of 200 ° C. or lower, and can reduce the occurrence of thermal stress and warpage applied to the peripheral members during die bonding.
  • the metal filler to be dispersed in the conductive adhesive is generally an Ag filler, but may be a metal other than Ag, and Cu filler, Ni filler, Au filler, Pd filler, carbon filler, etc. are the same as Ag filler. An effect is obtained.
  • micro-sized metal particles, nano-sized metal particles, or a sinterable metal paste in which micro-sized and nano-sized metal particles are mixed may be used.
  • the sinterable metal paste can be die-bonded at about 200 ° C. like the conductive adhesive.
  • the sintered metal paste after sintering is in a state close to a metal bulk, the metal particles are sintered and joined together, so that very high heat resistance can be obtained. As a result, the reliability at the time of high temperature operation of 175 ° C. or higher can be improved.
  • an Ag paste using Ag particles is generally used, but particles other than Ag may be used, and the same effect can be obtained by mixing Cu particles, Ni particles, Au particles, etc. in a solvent. Is obtained.
  • the epoxy resin used as the first sealing material 71 is a hard resin having a relatively high Young's modulus. Therefore, the reliability of the semiconductor device against thermal stress can be improved by covering and holding the semiconductor element 1 and the bonding material 2.
  • the flexural modulus of the epoxy resin is 100 MPa to 20000 MPa
  • the glass transition temperature Tg is 140 ° C. to 210 ° C.
  • the thermal expansion coefficient ⁇ 1 is 10 ⁇ 10 ⁇ 6 / K to 50 ⁇ 10 at temperatures below Tg. -6 / K or less.
  • the bending elastic modulus of the first sealing material 71 is more desirably about 150 MPa
  • the glass transition temperature Tg is more desirably 175 ° C. or more and 210 ° C.
  • the thermal expansion coefficient ⁇ 1 is more desirably Tg. It is 10 ⁇ 10 ⁇ 6 / K or more and 20 ⁇ 10 ⁇ 6 / K or less at the following temperature. If the glass transition temperature is 175 ° C. or higher, the linear expansion coefficient can be prevented from abruptly increasing 2 to 4 times even at the maximum temperature during operation of the semiconductor device, and reliability during high-temperature operation is ensured. be able to.
  • the first sealing material 71 is not limited to the epoxy resin, and may be any material having any molecular structure as long as it satisfies the above physical properties.
  • the silicone gel used also as the second sealing material 72 is a relatively soft resin, it can absorb deformation due to thermal stress. Therefore, it plays a role of dust-proofing without applying a large load to the wiring member 4.
  • the silicone gel is not particularly limited but is an easy-to-use one-pack type that adheres well to metals, ceramics, glass, etc., has a curing temperature of 200 ° C. or less, a flexural modulus of 1 MPa to 5 MPa, and a viscosity of 10 Pa ⁇ s. It is preferable that the penetration is 20 Pa ⁇ s or less and the penetration after curing is 30 or more and 100 or less (measurement of penetration by JIS K 6249).
  • the second sealing material 72 is not limited to silicone gel, and may be any material having any molecular structure as long as it satisfies the above physical properties.
  • the bending elastic modulus mentioned above of the 1st, 2nd sealing materials 71 and 72 is a value based on prescription
  • the base substrate 3 is prepared.
  • the electronic component 5 is joined to the conductive layer 33 by a reflow method. That is, the bonding material 51, that is, a solder paste is disposed on the conductive patterns 332 and 333 of the conductive layer 33 of the base substrate 3, and the bonding material 51 is heated and dissolved in a state where the electronic component 5 is mounted on the bonding material 51.
  • the bonding material 51 that is, a solder paste is disposed on the conductive patterns 332 and 333 of the conductive layer 33 of the base substrate 3, and the bonding material 51 is heated and dissolved in a state where the electronic component 5 is mounted on the bonding material 51.
  • the bonding material 2 is a conductive adhesive in which silver (Ag) filler is dispersed in an epoxy resin. Bonding is performed by heating the semiconductor element 1 at 150 ° C. for 2 hours in a state where the semiconductor element 1 is disposed on the conductive pattern 334 via the bonding material 2.
  • the upper electrode 91 on the input side of the semiconductor element 1 and the conductive pattern 331 are joined by a wire, that is, the wiring member 41 by wire bonding. Further, the upper electrode 92 on the output side of the semiconductor element 1 and the conductive pattern 332 are joined by a wire, that is, the wiring member 42 by wire bonding.
  • an epoxy resin is supplied as a first sealing material 71 to the semiconductor element 1 by a dispenser.
  • the epoxy resin is cured by heating at 130 ° C. for 1.5 hours.
  • the semiconductor element 1 is sealed by the first sealing material 71.
  • silicone gel is applied to the periphery of the semiconductor element as the second sealing material 72 from the outside of the first sealing material 71.
  • the silicone gel is cured by heating at 130 ° C. for 30 minutes.
  • the semiconductor element 1 is sealed from the outside of the first sealing material 71 by the second sealing material 72.
  • the wiring member 4 is sealed by the second sealing material 72.
  • the cap 6 is bonded to the conductive layer 33 with the adhesive 61 so as to cover the semiconductor element 1, the wiring member 4, the electronic component 5, and the like.
  • the adhesive 61 is, for example, a silicone adhesive, and the adhesive 61 is cured by heating at 120 ° C. for 1 hour.
  • the semiconductor device according to the first embodiment is arranged such that the insulating layer 32, the conductive layer 33 bonded to one main surface of the insulating layer 32, and the one main surface and the upper surface of the insulating layer 32 face the same direction.
  • the wiring member 4 having the hollow portion 4a, the first sealing material 71, and the second sealing material 72 softer than the first sealing material 71 are further provided, and the first sealing The material 71 seals at least a part of the semiconductor element 1 so as to be in contact with the semiconductor element 1, and the second sealing material 72 seals the wiring member 4 so as to be in contact with the wiring member 4.
  • the semiconductor element 1 since the semiconductor element 1 is sealed with the relatively hard first sealing material 71, the semiconductor element 1 can be prevented from peeling off.
  • the wiring member 4 since the wiring member 4 is sealed with the relatively soft second sealing material 72, when the insulating layer 32 and the conductive layer 33 are warped, stress is applied to the periphery of the wiring member 4. Even if it exists, the wiring member 4 can be dust-proofed and the stress with respect to the wiring member 4 can be reduced. Therefore, the reliability of the semiconductor device can be improved.
  • the semiconductor element 1 can be uniformly sealed by sealing the semiconductor element 1 so that the first sealing material 71 is in contact with the semiconductor element 1. it can.
  • the wiring member 4 can be uniformly sealed by sealing the wiring member 4 so that the second sealing material 72 is in contact with the wiring member 4. Therefore, the reliability of the semiconductor device can be further improved.
  • the area in contact with the second sealing material 72 of the wiring member 4 is larger than the area in contact with the first sealing material 71 of the wiring member 4. Is bigger. That is, in the first embodiment, as shown in FIG. 1, the periphery of the joint portion of the wiring member 4 with the upper surface electrode 9 of the semiconductor element 1 is sealed with the first sealing material 71. Most of the member 4 is sealed with a second sealing material 72. The most part of the wiring member 4 is sealed with the relatively soft second sealing material 72, whereby the thermal stress on the wiring member 4 can be reduced.
  • the wiring member 4 is a wire.
  • a wire is easily damaged by disconnection with respect to an external force.
  • the thermal stress on the wiring member 4 is reduced by sealing the wire with the relatively soft second sealing material 72 even when the base plate 3 is warped. be able to.
  • the bending elastic modulus of the second sealing material 72 is smaller than the bending elastic modulus of the first sealing material 71.
  • the bending elastic modulus of the second sealing material 72 is 1 MPa or more and 5 MPa or less, and the bending elastic modulus of the first sealing material 71 is about 150 MPa.
  • FIG. 3 is a cross-sectional view of the semiconductor device according to the second embodiment.
  • FIG. 4 is a plan view of the semiconductor device according to the second embodiment.
  • the cross section of the semiconductor device shown in FIG. 3 is a cross section taken along line BB in FIG.
  • the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing.
  • an opening 8 is provided at substantially the center of the base substrate 3.
  • the heat sink 31 is not covered with the insulating layer 32.
  • the opening 8 is formed by cutting the insulating layer 32 by, for example, machining.
  • the conductive layer 33 does not include the conductive pattern 334 described in the first embodiment.
  • the lower surface of the semiconductor element 1 is bonded to the heat dissipation plate 31 through the bonding material 2 in the opening 8 of the base substrate 3.
  • the opening 8 of the base substrate 3 and the semiconductor element 1 are sealed with a first sealing material 71.
  • the first sealing material 71 is, for example, an epoxy resin.
  • the first sealing material 71 has the physical characteristics described in the first embodiment.
  • the periphery of the opening 8 is sealed with a second sealing material 72.
  • the second sealing material 72 is softer than the first sealing material 71.
  • the second sealing material 72 is, for example, a silicone gel.
  • the second sealing material 72 seals the wiring member 4.
  • the second sealing material 72 seals the semiconductor element 1 from the outside of the first sealing material 71.
  • the second sealing material 72 has the physical characteristics described in the first embodiment.
  • the semiconductor element 1 is disposed in the opening 8 of the base substrate 3.
  • one semiconductor element 1 is disposed in the opening 8, but a plurality of semiconductor elements 1 may be disposed in the opening 8.
  • the plurality of semiconductor elements 1 may be the same semiconductor element or different semiconductor elements.
  • the insulating layer 32 has an opening 8 having a depth reaching the heat radiating plate 31, and the heat radiating plate 31 is exposed to the outside when the base substrate 3 alone is viewed in plan.
  • the number of openings 8 may be one or more as in the case of the semiconductor element 1, and the second embodiment describes the case where there is one opening 8.
  • ⁇ Manufacturing method> 5 to 9 are diagrams showing the manufacturing steps of the semiconductor device according to the second embodiment.
  • the base substrate 3 is prepared.
  • the electronic component 5 is bonded to the conductive layer 33 by a reflow method. That is, the bonding material 51, that is, a solder paste is disposed on the conductive patterns 332 and 333 of the conductive layer 33 of the base substrate 3, and the bonding material 51 is heated and dissolved in a state where the electronic component 5 is mounted on the bonding material 51.
  • the bonding material 51 that is, a solder paste is disposed on the conductive patterns 332 and 333 of the conductive layer 33 of the base substrate 3, and the bonding material 51 is heated and dissolved in a state where the electronic component 5 is mounted on the bonding material 51.
  • the bonding material 2 is a conductive adhesive in which silver (Ag) filler is dispersed in an epoxy resin. Bonding is performed by heating the semiconductor element 1 at 150 ° C. for 2 hours in a state where the semiconductor element 1 is disposed on the heat dissipation plate 31 via the bonding material 2.
  • the upper electrode 91 on the input side of the semiconductor element 1 and the conductive pattern 331 are joined by a wire, that is, a wiring member 41 by wire bonding. Further, the upper electrode 92 on the output side of the semiconductor element 1 and the conductive pattern 332 are joined by a wire, that is, the wiring member 42 by wire bonding.
  • an epoxy resin is supplied to the opening 8 as a first sealing material 71 by a dispenser.
  • the epoxy resin is cured by heating at 130 ° C. for 1.5 hours.
  • the opening 8 and the semiconductor element 1 are sealed by the first sealing material 71.
  • silicone gel is applied to the periphery of the semiconductor element as the second sealing material 72 from the outside of the first sealing material 71.
  • the silicone gel is cured by heating at 130 ° C. for 30 minutes.
  • the semiconductor element 1 is sealed from the outside of the first sealing material 71 by the second sealing material 72.
  • the wiring member 4 is sealed by the second sealing material 72.
  • the cap 6 is bonded to the conductive layer 33 with the adhesive 61 so as to cover the semiconductor element 1, the wiring member 4, the electronic component 5, and the like.
  • the adhesive 61 is cured by heating at 120 ° C. for 1 hour.
  • the semiconductor device shown in FIG. 3 is obtained through the above manufacturing steps.
  • the semiconductor device further includes a heat radiating plate 31, the other main surface of the insulating layer 32 is joined to one main surface of the heat radiating plate 31, and the heat radiating plate 31 is connected to one main surface of the heat radiating plate 31.
  • the semiconductor device according to the second embodiment has a structure in which the semiconductor element 1 is directly bonded onto the heat sink 31. Therefore, during the die bonding process in the manufacturing process and the temperature cycle in the reliability evaluation, the die bonding portion (that is, the semiconductor element 1 and the heat dissipation plate 31 and the A large thermal stress is generated in the bonding material 2) for bonding. As a result, cracks or the like were generated in the die bond part, and the heat dissipation could be deteriorated.
  • the silicone gel is relatively soft, so the force for holding the semiconductor element 1 and the joint 2 is small, and the deterioration of the joint 2 is suppressed. Can not do it.
  • the thermal expansion coefficient of the epoxy resin adjusted in accordance with the thermal expansion coefficient of Cu constituting the heat sink 31 is 15 ppm / K. It is 20 ppm / K or less.
  • the thermal expansion coefficient in the thickness direction of the glass epoxy constituting the insulating layer 32 is about 60 ppm / K, peeling is likely to occur at the interface between the epoxy resin and the glass epoxy during the temperature cycle. When the peeling propagates to the outside of the peeling portion having a large thermal stress, there is a high possibility that the wiring member 4 bonded to the surface of the conductive layer 33 is damaged.
  • the inside of the opening 8 of the base plate 3 is sealed with a relatively hard first sealing material 71, and the wiring member 4 outside the opening 8 is relatively It is sealed with a soft second sealing material 72.
  • the bonding material 2 that is easily affected by thermal stress generated by the difference in thermal expansion coefficient between the semiconductor element 1 and the heat sink 31 is reinforced with a relatively hard first sealing material 71.
  • the wiring member 4 is protected from dust and the thermal stress applied to the wiring member 4. Can be reduced. Therefore, the reliability of the semiconductor device can be improved.
  • one main surface of the insulating layer 32 that is, the upper surface of the insulating layer 32 is arranged higher than the upper surface of the semiconductor element 1.
  • the insulating layer 32 is made of glass epoxy
  • the first sealing material 71 is made of epoxy resin. Since the epoxy resin has high adhesion with the glass epoxy, the first sealing material 71 adheres well to the side surface 32 a of the insulating layer 32 in the opening 8. As a result, it is possible to suppress the first sealing material 71 from being peeled off from the heat sink 31 due to thermal stress and warpage generated in a die bonding step in the manufacturing process, a temperature cycle in reliability evaluation, and the like.
  • the first sealing material 71 is an epoxy resin
  • the second sealing material 72 is a silicone gel.
  • an epoxy resin has a higher thermal conductivity than a silicone gel. Therefore, sealing the semiconductor element 1 with an epoxy resin improves the heat dissipation of the semiconductor device.
  • the bonding material 2 for bonding the semiconductor element 1 and the heat dissipation plate 31 is a conductive resin, and the conductive resin is one of an epoxy resin, an acrylic resin, and a silicone rubber. And a metal filler.
  • a conductive adhesive containing a metal filler such as Ag, Au, or Cu may be used.
  • the metal filler but also epoxy, silicone, and acrylic resin are present on the surface of the fillet portion when the conductive adhesive is used, and the adhesion to the first sealing material 71 compared to the solder fillet. Is better. Therefore, the first sealing material 71 can hold the bonding material 2 more firmly, and the reliability of the semiconductor device can be further improved.
  • the bonding material 2 for bonding the semiconductor element 1 and the heat sink 31 may be a sinterable bonding material. Further, the surface of the bonding material 2 may be porous.
  • a micro-sized metal particle, a nano-sized metal particle, or a sintered metal paste in which micro-sized and nano-sized metal particles are mixed in a solvent is used. It doesn't matter. Sintered metal (for example, Ag, Au, Cu, etc.) pastes can be die-bonded at a low temperature of about 200 ° C. or less like conductive adhesives. In addition, after sintering, metal particles are sintered and joined together. Since it becomes a state close to a metal bulk, very high bondability, thermal conductivity and heat resistance can be obtained. As a result, the reliability at a high temperature operation of 175 ° C. or higher can be improved.
  • Sintered metal (for example, Ag, Au, Cu, etc.) pastes can be die-bonded at a low temperature of about 200 ° C. or less like conductive adhesives.
  • metal particles are sintered and joined together. Since it becomes a state close to a metal bulk, very high bondability, thermal conductivity and heat resistance can be obtained. As a result, the
  • the 1st sealing material 71 inject
  • the type that requires pressurization needs to provide a cushioning material between the semiconductor element 1 and the pressurization part of the pressurization device because the surface of the chip-shaped semiconductor element 1 cannot be directly pressed by the pressurization device. .
  • any foreign matter adhering to the surface of the semiconductor element 1 may cause damage to the semiconductor element 1. Therefore, the type that requires pressurization is used as the bonding material 2 for a high-frequency semiconductor element having a delicate surface. Not very suitable.
  • a sintered metal paste of a type that does not require pressurization loses the tackiness of the paste when pre-sintered, and has a smaller bonding strength than that of the pressurized type. It is desirable to complete the ligation.
  • FIG. 10 is a cross-sectional view of the semiconductor device according to the third embodiment.
  • FIG. 11 is a plan view of the semiconductor device according to the third embodiment.
  • the cross section of the semiconductor device shown in FIG. 10 is a cross section taken along the line CC in FIG. In FIG. 11, the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing of the drawing.
  • the opening 8 of the base substrate 3 is sealed with the first sealing material 71 as in the second embodiment.
  • the opening 8 is filled with the first sealing material 71 up to the height of one main surface (that is, the upper surface) of the insulating layer 32.
  • the first sealing material 71 may be in contact with the side surface of the conductive layer 33, but is disposed so as not to contact the upper surface of the conductive layer 33.
  • FIG. 12 is a cross-sectional view showing a modification of the semiconductor device according to the third embodiment.
  • the second sealing material 72 may be arranged in a divided shape. In this case, in the manufacturing process, the second sealing material 72 is applied in two steps. By applying the second sealing material 72 in two steps, the application amount per time can be reduced, and therefore the adjustment of the application amount for sealing the wiring member 4 without excess or deficiency becomes easy.
  • the opening 8 is filled with the first sealing material 71 up to the height of the one main surface of the insulating layer 32.
  • the contact area between the first sealing material 71 and the side surface 32a of the insulating layer 32 is increased, so that the adhesion between the first sealing material 71 and the heat sink 31 is improved, and the reliability of the semiconductor device is improved.
  • the insulating layer 32 is made of glass epoxy and the first sealing material 71 is made of epoxy resin. Since the epoxy resin has high adhesion with the glass epoxy, the first sealing material 71 adheres well to the side surface 32 a of the insulating layer 32 in the opening 8. Therefore, the adhesiveness between the first sealing material 71 and the heat radiating plate 31 is further improved, and the reliability of the semiconductor device can be further improved.
  • a resin adhesion strength test (that is, a pudding cup test) was performed.
  • a stainless steel cup (diameter 6 mm, height 4 mm) mounted on a copper plate plated with Ni or Au and coated with an epoxy resin was used as the first sample.
  • the stainless steel cup mounted on the glass epoxy board, and apply
  • the epoxy resin of each sample was cured under the recommended conditions.
  • the shear strength was 20 kg and 10 kg.
  • the shear strength was 42 kg and 38 kg. From the said result, it turned out that the adhesiveness with the glass epoxy board of an epoxy resin is 2 times or more of the adhesiveness with a copper board. It was also found that high adhesion was maintained even in a high temperature atmosphere such as 150 ° C. From the above test, it was confirmed that the reliability of the semiconductor device can be improved by increasing the contact area between the epoxy resin as the first sealing material 71 and the glass epoxy as the insulating layer 32.
  • FIG. 13 is a cross-sectional view of the semiconductor device according to the fourth embodiment.
  • FIG. 14 is a plan view of the semiconductor device according to the fourth embodiment.
  • the cross section of the semiconductor device shown in FIG. 13 is a cross section taken along the line DD in FIG.
  • the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing of the drawing.
  • the opening 8 of the base substrate 3 is sealed with the first sealing resin 71 as in the second embodiment.
  • the first sealing material 71 seals a part of the semiconductor element 1 so as not to contact the wiring member 4.
  • the second sealing material 72 seals the entire wiring member 4.
  • the first sealing material 71 may be in contact with the side surface of the semiconductor element 1, but is disposed so as not to contact the upper surface of the semiconductor element 1. However, as long as the first sealing material 71 does not contact the hollow portion 4 a of the wiring member 4, the first sealing material 71 may cover the upper surface of the semiconductor element 1. Moreover, the 2nd sealing material 72 should just be in contact with the whole hollow part 4a of the wiring member 4 at least.
  • a coplanar line type MMIC is known as one of the general configurations of MMIC (Monolytic Microwave Integrated Circuit) capable of forming active elements and passive elements collectively on a semiconductor substrate.
  • MMIC Monitoring Microwave Integrated Circuit
  • a fine air bridge of about several ⁇ m may be disposed on the surface of the semiconductor element 1.
  • the semiconductor element 1 is provided with an air bridge existence region 100 between the electrodes 91 and 92 on the upper surface.
  • An air bridge is provided above the air bridge existence region 100.
  • the first sealing material 71 does not cover the entire surface of the semiconductor element 1, but does not contact the upper surface of the semiconductor element 1 so as not to contact the air bridge. It is preferable to seal a part of 1.
  • the first sealing material 71 seals at least a part of the semiconductor element 1 so as not to contact the hollow portion 4a of the wiring member 4, and the second sealing material. 72 contacts the entire hollow portion 4 a of the wiring member 4.
  • the second sealing material 72 is in contact with the hollow portion 4a of the wiring member. That is, since the interface between the first sealing material 71 and the second sealing material 72 does not contact the hollow portion 4a of the wiring member 4, disconnection of the wiring member 4 due to stress can be suppressed.
  • the entire hollow portion 4a of the wiring member 4 is sealed with the soft second sealing material 72, it is possible to reduce the influence of the stress applied to the wiring member 4, and the reliability of the semiconductor device Can be further improved.
  • FIG. 15 is a plan view of the semiconductor device according to the fifth embodiment.
  • the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing.
  • the entire opening 8 of the base substrate 3 is sealed with the first sealing material 71.
  • the semiconductor element 1 has a rectangular shape in plan view, and the four corners of the semiconductor element 1 and the short sides facing each other are sealed with the first sealing material 71. Is done.
  • the first sealing material 71 is also in contact with the side surface 32 a of the insulating layer 32 near the short side of the semiconductor element 1, and the first sealing material 71 has sufficient adhesion strength.
  • the portion of the opening 8 that is not sealed with the sealing material 71 is sealed with the second sealing material 72. Further, the wiring member 4 is also sealed with the second sealing material 72. Since the other configuration of the semiconductor device of the fifth embodiment is the same as that of the semiconductor device of the second embodiment, the description thereof is omitted.
  • the semiconductor element 1 has a rectangular shape in plan view
  • the first sealing material 71 seals the four corners of the semiconductor element 1
  • the first sealing material 71 is in plan view. It extends along the opposing side of either one of the two sets of opposing sides.
  • the first sealing material 71 seals the opposing sides of either one of the four corners of the semiconductor element 1 and the two opposing sides, so that the first sealing material 71 Compared to the case where the entire semiconductor element 1 is sealed, it is possible to fix the semiconductor element 1 in close contact with the heat radiating plate 31 with less sealing material.
  • the amount of the first sealing material 71 used for sealing is reduced by disposing the first sealing material 71 only at the minimum necessary location in the opening 8. It can be greatly reduced. By reducing the amount of the first sealing material 71 to be arranged, the possibility that voids are formed in the first sealing material 71 without additional capital investment and additional manufacturing steps is reduced. Can do.
  • the first sealing material 71 is formed on the opposing sides of the pair having a shorter side length among the two opposing sides in the plan view of the semiconductor element 1. Extending along. As shown in FIG. 15, when the first sealing material 71 is disposed along the short sides facing each other, compared to the case where the first sealing material 71 is disposed along the long sides facing each other. The amount of the first sealing material 71 to be arranged is small. Therefore, it is possible to further reduce the possibility that voids are generated inside the first sealing material 71. Further, since the four corners of the semiconductor element 1 where the stress is generated are covered with the first sealing material 71, the reliability of the semiconductor device is sufficiently ensured.
  • FIG. 16 is a plan view of the semiconductor device according to the sixth embodiment.
  • the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing.
  • the four corners of the semiconductor element 1 and the short sides facing each other are sealed with the first sealing material 71.
  • the four corners of the semiconductor element 1 and the long sides facing each other are sealed with the first sealing material 71. Since the other configuration of the semiconductor device of the sixth embodiment is the same as that of the semiconductor device of the fifth embodiment, description thereof is omitted.
  • the first sealing material 71 extends along the opposing sides of the set having a longer side length among the two opposing sides in the plan view of the semiconductor element 1. Extend.
  • the long sides facing each other are sealed with the first sealing material 71, so that a small amount of the first sealing material 71 can be used. 1 and the bonding material 2 can be held more firmly. Accordingly, it is possible to reduce both the possibility that voids are generated inside the first sealing material 71 and the high reliability of the semiconductor device.
  • FIG. 17 is a plan view of the semiconductor device according to the seventh embodiment.
  • FIG. 18 is a cross-sectional view of the semiconductor device according to the seventh embodiment.
  • the cross section of the semiconductor device shown in FIG. 18 is a cross section taken along line EE of FIG.
  • the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing.
  • FIG. 19 is a plan view schematically showing the air bridge existence region 100. In FIG. 19, the first sealing material 71 is not shown.
  • the four corners of the semiconductor element 1 and the short sides facing each other are sealed with the first sealing material 71
  • the four corners of the semiconductor element 1 and the long sides facing each other are the first.
  • the sealing material 71 was used.
  • the seventh embodiment only the four corners of the semiconductor element 1 are sealed with the first sealing material 71.
  • the semiconductor element 1 has a rectangular shape in plan view, the first sealing material 71 seals the four corners of the semiconductor element 1, and the first sealing material 71 , Discrete at each of the four corners of the semiconductor element 1, there are four locations.
  • the first sealing material 71 is sealed so that the four corners of the semiconductor element 1 are not exposed. Further, since the first sealing material 71 seals only the four corners of the minimum necessary semiconductor element 1, the first sealing material 71 is inside the semiconductor element 1, the bonding material 2, and the opening 8. It is necessary to be surely in contact with the heat sink 31.
  • the first sealing material 71 is preferably sealed so as not to contact the air bridge existence region 100 shown in FIG. Since the first sealing material 71 of the seventh embodiment is discretely formed at each of the four corners, the first sealing material 71 does not contact the air bridge existence region 100 between the upper surface electrodes 91 and 92. Thus, the semiconductor element 1 can be sealed.
  • the semiconductor element 1 used in the high-frequency semiconductor device often has a rectangular shape, and is inclined along the longitudinal direction with respect to the semiconductor element 1 after the die bonding process for forming the bonding material 2 as compared with the square. Is likely to occur.
  • FIG. 20 is a plan view of a semiconductor device which is a modification of the seventh embodiment.
  • FIG. 21 is a cross-sectional view of a semiconductor device which is a modification of the seventh embodiment.
  • the cross section of the semiconductor device shown in FIG. 21 is a cross section taken along line FF in FIG.
  • the second sealing material 72 and the cap 6 are indicated by phantom lines for easy viewing.
  • the modification of the seventh embodiment has a structure on the premise that the semiconductor element 1 is inclined along the longitudinal direction.
  • the bonding material 2 has a film thickness on the side of one of the opposing sides of the pair having a shorter side length among the two opposing sides in the plan view of the semiconductor element 1.
  • the structure is provided so as to be thinner than the film thickness on the other side. That is, in the modification of the seventh embodiment, the bonding material 2 has a film thickness on one short side of the short sides facing the semiconductor element 1 in plan view, compared with the film thickness on the other short side.
  • the structure is assumed to be thin.
  • the first sealing material 71 is formed separately at the four corners of the semiconductor element 1 by the dispensing device. That is, the first sealing material 71 is constituted by the two first sealing materials 711 and 711 and the two first sealing materials 712 and 712. Then, as shown in FIG. 21, the coating amount is changed between the first sealing materials 711 and 712 corresponding to the inclination of the semiconductor element 1.
  • the two corners where the bonding material 2 as the die bond layer is formed relatively thin have a relatively large coating amount as the formation amount.
  • the first sealing material 711 with a relatively small coating amount is provided at the two corners where the bonding material 2 is formed relatively thick.
  • the bonding material 2 has a coating amount that is the amount of formation of the first sealing material 712 at the two corners on one short side where the bonding material 2 is formed relatively thin. 2 is larger than the coating amount of the first sealing material 711 at the two corners on the other short side formed relatively thick. That is, in the modification of the seventh embodiment, the first sealing material 71 composed of the two first sealing materials 711 and the two first sealing materials 712 has two The corner is formed so that the amount of formation is larger than the amount of formation of the two corners on the other side.
  • the height of the first sealing materials 711 and 712 is lower than the formation height of the insulating layer 31 and fits in the opening 8. Since the stress applied to the bonding material 2 varies depending on the physical properties and size of each member, an approximate stress is assumed in advance by using a simulation, etc., and the stress applied to the bonding material 2 is accurately predicted by a test with an actual machine. Based on the thickness of the bonding material 2 at the corner, the application amount of each of the first sealing materials 711 and 712 can be determined before manufacturing.
  • a semiconductor element used in a high-frequency semiconductor device often has a rectangular shape in plan view, and is longer along the longitudinal direction of the semiconductor element 1 after the die-bonding process for forming the bonding material 2 than in the case of a square. And tilt is likely to occur. Therefore, as described above, the thickness of the bonding material 2 that is the die bond layer also varies at the four corners of the semiconductor element 1. In general, when the bonding material 2 is thick, the stress relaxation property is large, and when the bonding material 2 is thin, the stress relaxation property is small.
  • the film thickness of the bonding material 2 at the four corners of the semiconductor element 1 varies, the reliability with respect to the thermal shock test and the like at the four corners also varies, and the bonding material 2 deteriorates from the weakest corner, and the reliability is the weakest. It is rate-limiting in the corner.
  • the application amount which is the formation amount of the first sealing materials 711 and 712, corresponding to the inclination of the semiconductor element 1, that is, the film thickness of the bonding material 2. Since the stress relaxation at the four corners can be made uniform, high reliability can be obtained.
  • the first sealing material 71 is provided separately at each of the four corners of the semiconductor element 1. Therefore, assuming that the bonding material 2 is provided with a different film thickness at each of the four corners facing each other when the semiconductor element 1 is viewed in plan view, each of the four corners of the semiconductor element 1 corresponds to the film thickness of the bonding material 2.
  • the application amount of the first sealing material 71 can be changed and set. As a result, the semiconductor device of the seventh embodiment can make the stress relaxation at the four corners of the bonding material 2 uniform even when the bonding material 2 is provided with different film thicknesses at the four corners.
  • the first sealing material 71 may seal at least a part of the semiconductor element 1 so as to be in direct contact with the semiconductor element 1. Further, the second sealing material 72 may seal the wiring member 4 so as to be in direct contact with the wiring member 4. It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

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Abstract

本発明は熱応力に対して信頼性をより向上させた半導体装置の提供を目的とする。そして、本発明に係る半導体装置は、絶縁層（３２）と、絶縁層（３２）の一方主面に接合された導電層（３３）と、絶縁層（３２）の前記一方主面と上面が同じ方向を向くように配置された半導体素子（１）と、を備え、半導体素子（１）の上面には上面電極（９）が設けられ、一端が半導体素子（１）の上面電極（９）に電気的に接合され、他端が導電層（３３）に電気的に接合された、中空部分（４ａ）を有する配線部材（４）と、第１の封止材（７１）と、第１の封止材（７１）よりも柔らかい第２の封止材（７２）と、をさらに備え、第１の封止材（７１）は、半導体素子（１）と接触するように半導体素子（１）の少なくとも一部を封止し、第２の封止材（７２）は、配線部材（４）と接触するように配線部材（４）を封止する。

Description

半導体装置
　本発明は半導体装置に関し、例えば高周波信号を扱う半導体装置に関する。
　近年、インターネットの普及に伴い、携帯電話、スマートフォンなど移動体通信装置の通信の高速化がトレンドとなっている。また、防災無線の映像送受信の必要性など、安全面からの需要も高まっている。これに伴い、キーデバイスである高周波通信用パッケージに対する高信頼性化が急務となっている。
　高周波パッケージは、数十ＭＨｚを超える周波数の信号を増幅、整合させながら入出力する半導体装置である。通信の高速化の需要に伴い、半導体装置の高出力化が求められている。高出力化された半導体装置においては、放熱性の高いパッケージ構造が要求される。放熱性の高いパッケージ構造においては、例えば、銅（Ｃｕ）など放熱性に優れた材料で構成された放熱板にガラスエポキシなどの絶縁層を貼りつけたベース板が採用される。
　このようなベース板において、ガラスエポキシ層を機械加工などで切削し、金属ベース基板の凹部に露出させた金属板に半導体素子がダイボンド処理され、ワイヤボンドで配線を形成し、防塵のための樹脂封止を行うことでパッケージが形成される。
　半導体素子の基材であるシリコン（Ｓｉ）、砒化ガリウム（ＧａＡｓ）、シリコンカーバイド（ＳｉＣ）、窒化ガリウム（ＧａＮ）などは熱膨張係数が３ｐｐｍ／Ｋ以上６ｐｐｍ／Ｋ以下程度の範囲である。この値は、放熱に用いられるベース板を構成するＣｕの熱膨張係数（１６ｐｐｍ／Ｋ）に比較すると著しく小さい。そのため、製造プロセスでのダイボンド工程、信頼性評価での温度サイクルなどで生じる熱応力によって半導体素子とベース板とを接合するダイボンド部にクラックなどが生じ、放熱性が劣化する可能性があった。そこで、ダイボンド部を補強するためにフィラーを分散させたエポキシ樹脂などの封止材によって半導体素子を封止するなどの対策が行われていた。しかしながら、封止材とベース板との膨張係数差によってベース板に反りが生じることにより封止材がベース板から剥離する可能性があった。封止材が剥離することにより、ワイヤボンド部がダメージを受ける懸念がある。
　例えば、特許文献１においては、フリップチップ実装された素子周辺とそれ以外を異なる物性の材料で封止する方法が提案されている。また、特許文献２においては、素子周辺を硬いエポキシで封止し、全体は柔軟なウレタン樹脂で封止することで信頼性を確保する方法が示されている。
特開平１０－２０９３４４号公報 特開２００６－３５１７３７号公報
　上述したように、通信の高速化および半導体装置の高出力化に伴い、半導体装置内部で発生する熱応力も増大している。そのため、熱応力に対して信頼性を向上させた半導体装置に対する要求がさらに高まっている。
　本発明は以上のような課題を解決するためになされたものであり、熱応力に対して信頼性をより向上させた半導体装置の提供を目的とする。
　本発明に係る半導体装置は、絶縁層と、絶縁層の一方主面に接合された導電層と、絶縁層の一方主面と上面が同じ方向を向くように配置された半導体素子と、を備え、半導体素子の上面には上面電極が設けられ、一端が半導体素子の上面電極に電気的に接合され、他端が導電層に電気的に接合され、中空部分を有する配線部材と、第１の封止材と、第１の封止材よりも柔らかい第２の封止材と、をさらに備え、第１の封止材は、半導体素子と接触するように半導体素子の少なくとも一部を封止し、第２の封止材は、配線部材と接触するように配線部材を封止する。
　本発明に係る半導体装置においては、比較的硬い第１の封止材で半導体素子が封止されるため、半導体素子の剥離を抑制することができる。また、比較的柔らかい第２の封止材で配線部材が封止されるため、絶縁層および導電層に反りが生じるなどして、配線部材の周囲に熱応力が加わった場合であっても、配線部材を防塵しかつ配線部材に対する熱応力を低減することができる。従って、半導体装置の信頼性を向上させることができる。また、本発明に係る半導体装置においては、第１の封止材が半導体素子と接触するように半導体素子を封止することにより、半導体素子を均一に封止することができる。同様に、第２の封止材が配線部材と接触するように配線部材を封止することにより、配線部材を均一に封止することができる。従って、半導体装置の信頼性をさらに向上させることができる。
　この発明の目的、特徴、局面、および利点は、以下の詳細な説明と添付図面とによって、より明白となる。
実施の形態１に係る半導体装置の断面図である。 実施の形態１に係る半導体装置の平面図である。 実施の形態２に係る半導体装置の断面図である。 実施の形態２に係る半導体装置の平面図である。 実施の形態２に係る半導体装置の製造工程を示す図である。 実施の形態２に係る半導体装置の製造工程を示す図である。 実施の形態２に係る半導体装置の製造工程を示す図である。 実施の形態２に係る半導体装置の製造工程を示す図である。 実施の形態２に係る半導体装置の製造工程を示す図である。 実施の形態３に係る半導体装置の断面図である。 実施の形態３に係る半導体装置の平面図である。 実施の形態３の変形例に係る半導体装置の断面図である。 実施の形態４に係る半導体装置の断面図である。 実施の形態４に係る半導体装置の平面図である。 実施の形態５に係る半導体装置の平面図である。 実施の形態６に係る半導体装置の平面図である。 実施の形態７に係る半導体装置の平面図である。 実施の形態７に係る半導体装置の断面図である。 エアブリッジ存在領域を模式的に示す平面図である。 実施の形態７の変形例である半導体装置の平面図である。 実施の形態７の変形例である半導体装置の断面図である。
　＜実施の形態１＞
　図１は、本実施の形態１における半導体装置の断面図である。図２は、本実施の形態１における半導体装置の平面図である。図１に示す半導体装置の断面は、図２の線分Ａ－Ａに沿った断面である。なお、図２において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。
　本実施の形態１における半導体装置は、絶縁層３２と、導電層３３と、放熱板３１と、半導体素子１と、複数の配線部材４と、第１の封止材７１と、第２の封止材７２とを備える。ベース基板３は、放熱板３１、絶縁層３２および導電層３３から構成される。放熱板３１の上面には絶縁層３２が接合される。絶縁層３２の上面には導電層３３が接合される。
　複数の配線部材４は入力側の配線部材４１と出力側の配線部材４２を含む。入力側と出力側を特に区別しない場合は単に配線部材４と記載する。配線部材４は中空部分４ａを備える。図１に示すように、中空部分４ａとは、配線部材４の両端の接合に供される部分の間に存在する部分である。
　導電層３３は、互いに分離した複数の導電パターン３３１，３３２，３３３，３３４から構成される。複数の導電パターン３３１のそれぞれは、高周波信号が入力される外部電極部分３３１ａと、配線部材接合部分３３１ｂを備える。複数の導電パターン３３２のそれぞれは、配線部材接合部分３３２ａを備える。複数の導電パターン３３３のそれぞれは、高周波信号を出力する外部電極部分３３３ａを備える。
　半導体素子１は例えば、Ｓｉ製のＭＨｚ帯域用パワーアンプ用素子である。半導体素子１は上面に複数の上面電極９を備える。上面電極９は入力側の上面電極９１と出力側の上面電極９２を含む。入力側と出力側を特に区別しない場合は単に上面電極９と記載する。上面電極９は例えばアルミニウム（Ａｌ）を含む合金製である。半導体素子１の下面は、接合材２を介して導電パターン３３４に接合されている。
　半導体素子１の入力側の上面電極９１と、導電パターン３３１とが、配線部材４１で電気的に接合されている。つまり、配線部材４１の一端が半導体素子１の入力側の上面電極９１に接合され、配線部材４１の他端が導電パターン３３１の配線部材接合部分３３１ｂに接合されている。半導体素子１の出力側の上面電極９２と、導電パターン３３２とが、配線部材４２で電気的に接合されている。つまり、配線部材４２の一端が半導体素子１の出力側の上面電極９２に電気的に接合され、配線部材４２の他端が導電パターン３３２の配線部材接合部分３３２ａに電気的に接合されている。本実施の形態１において、配線部材４は、例えば、直径０．１５ｍｍのＡｌ製ワイヤである。
　また、複数の導電パターン３３２と複数の導電パターン３３３のそれぞれが、高周波特性を調整するための電子部品５を介して電気的に接続されている。導電パターン３３１の外部電極部分３３１ａは、半導体装置の外部電極として利用される。導電パターン３３３の外部電極部分３３３ａは、半導体装置の外部電極として利用される。
　図１に示すように、半導体素子１は第１の封止材７１によって封止されている。第１の封止材７１は、例えばエポキシ樹脂である。エポキシ樹脂中にシリカフィラーを分散させることにより、膨張係数が１６ｐｐｍ／Ｋ程度に調整されている。
　なお、半導体素子１の表面は、第１の封止材７１により封止される。第１の封止材７１は半導体素子１に接触している。また、導電パターン３３４の上面および接合材２も第１の封止材７１により封止される。第１の封止材７１は導電パターン３３４と接合材２にも接触している。
　第２の封止材７２は、配線部材４と、第１の封止材７１で封止された半導体素子１を封止する。第２の封止材７２は第１の封止材７１よりも柔らかい。第２の封止材７２は、例えばシリコーンゲルである。なお、第２の封止材７２は配線部材４の表面に接触している。
　また、半導体素子１、配線部材４、第１、第２の封止材７１，７２などを覆うように、導電層３３にキャップ６が接着剤６１により固定される。キャップ６は例えば、ポリフェニレンサルファイド（ＰＰＳ）樹脂である。接着剤６１は例えば、シリコーン接着剤である。
　本実施の形態１においては、導電パターン３３４の上面に１つの半導体素子１が配置されているが、導電パターン３３４の上面に複数の半導体素子１が配置されていてもよい。また、半導体素子１は、入力側の上面電極９１を介して入力された高周波信号を電力増幅し、増幅された高周波信号を、出力側の上面電極９２から出力する高周波電力増幅素子である。
　なお、本実施の形態１の半導体装置のパッケージに実装される半導体素子１としては、上述した電力増幅機能を有するものだけでなく、高周波信号のスイッチング機能を有するものでもよい。高周波信号とは、数十ＭＨｚを超える周波数の信号である。例えば、半導体素子１は、シリコンを含むＭＯＳ－ＦＥＴ（Ｍｅｔａｌ　Ｏｘｉｄｅ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ）、ＬＤＭＯＳ（Ｌａｔｅｒａｌ　ｄｏｕｂｌｅ　Ｄｉｆｆｕｓｅｄ　ＭＯＳＦＥＴ）でもよい。また、半導体素子１は、化合物半導体であるガリウム砒素リンを含むＧａＡｓ－ＨＦＥＴ（Ｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅ　Ｆｉｅｌｄ　Ｅｆｆｅｃｔ　Ｔｒａｎｓｉｓｔｏｒ）、ＧａＡｓ－ＨＢＴ（Ｈｅｔｅｒｏｊｕｎｃｔｉｏｎ　Ｂｉｐｏｌａｒ　Ｔｒａｎｓｉｓｔｏｒ）でもよい。また、半導体素子１は、窒化ガリウムを含む、ＧａＮ－ＨＦＥＴ（Ｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅ　Ｆｉｅｌｄ　Ｅｆｆｅｃｔ　Ｔｒａｎｓｉｓｔｏｒ）でもよい。ワイドバンドギャップ半導体である窒化ガリウム製の半導体素子は、高い電子速度、ワイドバンドギャップによる高い絶縁破壊電圧、大電力動作が可能、広い動作帯域幅、高温動作が可能、低コストで小型化が可能といった様々なメリットを有している。複数の半導体素子１を導電パターン３３４の上面に配置する場合、複数の半導体素子１は同じ半導体素子であっても良いし、異なる半導体素子でもよい。
　放熱板３１は、半導体素子１が動作しているときに発生する多量の熱を外部に向かって放熱する機能を有している。放熱は対流および放射による空中への熱伝達と、接触している物を伝わる熱伝導により起こる。そのため、放熱板３１を熱伝導性に優れた材料で形成し、放熱板３１の半導体素子１と反対側の面に配置したヒートシンク（図示せず）を空冷、水冷などにより冷却することで半導体素子１から発生する熱を効率良く放熱板３１を介して外部に放散させることができる。
　本実施の形態１では、Ｃｕ製の放熱板３１を用いているが、放熱板３１の素材はこれに限定するものではない。放熱板３１は例えば、鉄（Ｆｅ）、タングステン（Ｗ）、モリブデン（Ｍｏ）、ニッケル（Ｎｉ）またはコバルト（Ｃｏ）などの金属材料、もしくは、これらの金属材料を含有する合金材料であってもよい。また、放熱板３１は、これらの金属材料又は合金材料を組み合わせた複合材料であってもよい。
　銅とタングステンの合金（Ｃｕ－Ｗ）は、タングステンの低熱膨張性と銅の高熱伝導性を兼ね備えた複合材料である。タングステンと銅の組成比率を変えることで周辺材料に合わせて熱膨張係数の調整が可能である。また、銅とモリブデンの合金（Ｃｕ－Ｍｏ）は、Ｃｕ－Ｗよりも高い熱伝導率が期待でき、同様にモリブデンと銅の組成比率を変えることで熱膨張係数および熱伝導率を調整可能な材料である。また、Ｃｕ－Ｍｏを芯材とし、両面にＣｕを貼り合わせた三層構造のクラッド材なども挙げられる。このクラッド材は表面が純銅であるため、表面の熱分散を大きくすることができる。
　絶縁層３２は、例えばＦＲ（Ｆｌａｍｅ　Ｒｅｔａｒｄａｎｔ）－４、ＦＲ－５などのようなガラスエポキシ基板である。絶縁層３２はアルミナ基板であってもよい。導電層３３は、導電性を有する材料であれば特に制限されない。導電層３３は、Ｃｕ、Ａｌなどを主に含む材料で構成されてもよい。また、導電層３３は、Ａｕ、Ａｇなどの導電材料を絶縁層３２上にめっきすることによって形成されてもよい。
　本実施の形態１では、図２に示すように、複数の導電パターン３３１において、配線部材接合部分３３１ｂが互いに分離した形状となっているが、配線部材接合部分３３１ｂは分離せず一体となっていてもよい。この場合、配線部材４１としてのワイヤをワイヤボンディングする際に、半導体素子１の上面電極９と配線部材接合部分３３１ｂとの距離および高さを設定すればよく、各配線部材接合部分３３１ｂに対する精度の高い位置合わせが不要になる。従って、ワイヤボンドに要する時間が短縮可能になる。
　図２に示すように、配線部材接合部分３３１ｂが配線部材４１ごとに分離されていると、絶縁層３２と第２の封止材７２とが密着する面積が増加するため信頼性が向上する。このように、製造時のタクトタイムと信頼性のトレードオフを考慮して配線部材接合部分３３１ｂの形状を決定すればよい。なお、複数の導電パターン３３２の配線部材接合部分３３２ａの形状についても、製造時のタクトタイムと信頼性のトレードオフを考慮して決定される。
　導電パターン３３４の数は、半導体素子１と同様に１つ以上であればよく、本実施の形態１では、導電パターン３３４が１つの場合を説明している。また、本実施の形態１には記載していないが、電子部品５を接合するための接合材５１の濡れ拡がり範囲を制御するために、絶縁層３２上にソルダーレジストを形成してもよい。
　ベース基板３は、放熱板３１、絶縁層３２、導電層３３から構成されている。放熱板３１は、ガラスクロスによって強化されたエポキシ樹脂のような繊維強化樹脂材料などを介して絶縁層３２に接合されている。この繊維強化樹脂材料の軟化温度は、接合材５１の融点よりも高いことが望ましい。
　電子部品５は例えばチップ抵抗である。チップ抵抗は、半導体素子１の高周波特性の調整用に導電層３３に搭載される。なお、本実施形態１では、電子部品５としてチップ抵抗を搭載しているが、電子部品５は例えばチップコンデンサなどであってもよい。また、導電層３３を搭載する電子部品５は１個以上であればよい。電子部品５を複数搭載する場合、電子部品は同じであってもよいし、互いに異なっていてもよい。電子部品５は、接合材５１によって導電層３３に接合されている。接合材５１は、例えばソルダペーストである。ソルダペーストはＰｂ系はんだに限らず、ＳＡＣ３０５のようなＰｂフリーはんだであってもよい。
　半導体素子１は、導電層３３の導電パターン３３４に接合材２を介して接合されている。本実施の形態１では、接合材２はＡｕ－Ｓｎ、Ａｕ－Ｇｅ、Ａｕ－Ｓｉ等のはんだ合金である。接合材２は低融点のはんだ合金に限定されず、熱伝導性の高い金属フィラーを分散させた導電性接着剤であってもよい。導電性接着剤は、２００℃以下の低温でダイボンド可能であり、ダイボンド時の周辺部材に加わる熱応力や反りの発生を低減することができる。また、導電性接着剤に分散させる金属フィラーは、Ａｇフィラーが一般的であるが、Ａｇ以外の金属でもよく、Ｃｕフィラー、Ｎｉフィラー、Ａｕフィラー、Ｐｄフィラー、カーボンフィラーなどでもＡｇフィラーと同様の効果が得られる。
　また、接合材２として、溶剤にマイクロサイズの金属粒子、ナノサイズの金属粒子、もしくは、マイクロサイズとナノサイズの金属粒子を混合した焼結性金属ペーストを用いてもよい。焼結性金属ペーストは、導電性接着剤と同様に約２００℃でダイボンド可能である。さらに焼結後の焼結金属ペーストは、金属粒子同士が焼結接合し、金属バルクに近い状態になるため、非常に高い耐熱性を得られる。結果として、１７５℃以上の高温動作時での信頼性を向上させることができる。また、焼結金属ペーストとしては、Ａｇ粒子を用いたＡｇペーストが一般的であるが、Ａｇ以外の粒子でもよく、Ｃｕ粒子、Ｎｉ粒子、Ａｕ粒子などを溶剤に混合させたものでも同様の効果が得られる。
　第１の封止材７１として用いられるエポキシ樹脂は、比較的ヤング率が高く、硬い樹脂である。そのため、半導体素子１および接合材２を覆い保持することで、熱応力に対する半導体装置の信頼性を向上させることができる。エポキシ樹脂の曲げ弾性率は１００ＭＰａ以上２００００ＭＰａ以下であり、ガラス転移温度Ｔｇは１４０℃以上２１０℃以下であり、熱膨張係数α１は、Ｔｇ以下の温度において１０×１０－６／Ｋ以上５０×１０－６／Ｋ以下である。第１の封止材７１の曲げ弾性率は、より望ましくは約１５０ＭＰａであり、ガラス転移温度Ｔｇは、より望ましくは１７５℃以上２１０℃以下であり、熱膨張係数α１は、より望ましくは、Ｔｇ以下の温度において１０×１０－６／Ｋ以上２０×１０－６／Ｋ以下である。ガラス転移温度が１７５℃以上であれば、半導体装置の動作時における最大温度においても線膨張係数が２～４倍に急激に上昇することを避けることができ、高温動作時の信頼性を確保することができる。なお、第１の封止材７１はエポキシ樹脂に限定されるものではなく、上記物性を満たすものであれば、どのような分子構造を有する材料であっても構わない。
　第２の封止材７２としても用いられるシリコーンゲルは、比較的柔らかい樹脂であるため、熱応力による変形を吸収することができる。そのため、配線部材４に大きな負荷をかけることなく防塵する役割を担っている。シリコーンゲルは、特に制限はないが、使いやすい１液型であり、金属、セラミックス、ガラスなどによく接着し、キュア温度が２００℃以下、曲げ弾性率が１ＭＰａ以上５ＭＰａ以下、粘度が１０Ｐａ・ｓ以上２０Ｐａ・ｓ以下、硬化後の針入度が３０以上１００以下(ＪＩＳ　Ｋ　６２４９で針入れ度を測定)であることが望ましい。なお、第２の封止材７２はシリコーンゲルに限定されるものではなく、上記物性を満たすものであれば、どのような分子構造を有する材料であっても構わない。なお、第１、第２の封止材７１，７２の上述した曲げ弾性率は、ＪＩＳ　Ｋ　６９１１（熱硬化性プラスチック一般試験方法）の規定に基づく値である。
　＜製造方法＞
　本実施の形態１における半導体装置の製造方法を説明する。まず、ベース基板３を用意する。次に、リフロー方式で電子部品５を導電層３３に接合する。つまり、ベース基板３の導電層３３の導電パターン３３２，３３３上に接合材５１、即ちソルダペーストを配置し、接合材５１に電子部品５を搭載した状態で接合材５１を加熱して溶解させる。
　次に、半導体素子１を接合材２で導電パターン３３４に接合する。接合材２は銀（Ａｇ）フィラーをエポキシ樹脂に分散させた導電性接着剤である。半導体素子１を、接合材２を介して導電パターン３３４に配置した状態において、１５０℃で２時間加熱することにより接合が行われる。
　次に、半導体素子１の入力側の上面電極９１と導電パターン３３１とをワイヤボンディングによりワイヤ、即ち配線部材４１で接合する。また、半導体素子１の出力側の上面電極９２と導電パターン３３２とをワイヤボンディングによりワイヤ、即ち配線部材４２で接合する。
　次に、半導体素子１に対して第１の封止材７１としてエポキシ樹脂をディスペンサにより供給する。１３０℃で１．５時間加熱することによりエポキシ樹脂が硬化する。この結果、第１の封止材７１により、半導体素子１が封止される。
　次に、第１の封止材７１の外側から、第２の封止材７２としてシリコーンゲルを半導体素子周辺に塗付する。１３０℃で３０分加熱することによりシリコーンゲルが硬化する。この結果、第２の封止材７２により第１の封止材７１の外側から半導体素子１が封止される。また、第２の封止材７２により配線部材４が封止される。
　最後に、半導体素子１、配線部材４、電子部品５などを覆うようにキャップ６を導電層３３に接着剤６１で接着する。接着剤６１は例えばシリコーン接着剤であり、１２０℃で１時間加熱することにより接着剤６１が硬化する。
　＜効果＞
　本実施の形態１における半導体装置は、絶縁層３２と、絶縁層３２の一方主面に接合された導電層３３と、絶縁層３２の前記一方主面と上面が同じ方向を向くように配置された半導体素子１と、を備え、半導体素子１の上面には上面電極９が設けられ、一端が半導体素子１の上面電極９に電気的に接合され、他端が導電層３３に電気的に接合された、中空部分４ａを有する配線部材４と、第１の封止材７１と、第１の封止材７１よりも柔らかい第２の封止材７２と、をさらに備え、第１の封止材７１は、半導体素子１と接触するように半導体素子１の少なくとも一部を封止し、第２の封止材７２は、配線部材４と接触するように配線部材４を封止する。
　本実施の形態１における半導体装置においては、比較的硬い第１の封止材７１で半導体素子１が封止されるため、半導体素子１が剥離することを抑制することができる。また、比較的柔らかい第２の封止材７２で配線部材４が封止されるため、絶縁層３２および導電層３３に反りが生じるなどして、配線部材４の周囲に応力が加わった場合であっても、配線部材４を防塵しかつ配線部材４に対する応力を低減することができる。従って、半導体装置の信頼性を向上させることができる。
　さらに、本実施の形態１における半導体装置においては、第１の封止材７１が半導体素子１と接触するように半導体素子１を封止することにより、半導体素子１を均一に封止することができる。同様に、第２の封止材７２が配線部材４と接触するように配線部材４を封止することにより、配線部材４を均一に封止することができる。従って、半導体装置の信頼性をさらに向上させることができる。
　また、本実施の形態１における半導体装置において、配線部材４の第１の封止材７１に接触している面積よりも、配線部材４の第２の封止材７２に接触している面積の方が大きい。つまり、本実施の形態１では、図１に示すように、配線部材４の半導体素子１の上面電極９との接合部分の周辺は第１の封止材７１で封止されているが、配線部材４の大半の部分は第２の封止材７２で封止されている。配線部材４の大半の部分が、比較的柔らかい第２の封止材７２で封止されることにより、配線部材４に対する熱応力を低減することができる。
　また、本実施の形態１における半導体装置において、配線部材４はワイヤである。一般的に、ワイヤは外部から加わる力に対して断線するなどのダメージを受けやすい。本実施の形態４においては、比較的柔らかい第２の封止材７２でワイヤを封止することにより、ベース板３に反りが生じた場合であっても、配線部材４に対する熱応力を低減することができる。
　また、本実施の形態１における半導体装置において、第２の封止材７２の曲げ弾性率は、第１の封止材７１の曲げ弾性率よりも小さい。例えば、本実施の形態１においては、第２の封止材７２の曲げ弾性率を１ＭＰａ以上５ＭＰａ以下とし、第１の封止材７１の曲げ弾性率を約１５０ＭＰａとする。曲げ弾性率が比較的大きい、即ち比較的硬い第１の封止材７１で半導体素子１を封止することにより、接合材２を介して導電パターン３３４に半導体素子１を強固に保持することが可能である。また、曲げ弾性率が比較的小さい、即ち比較的柔らかい第２の封止材７２で配線部材４を封止することにより、配線部材４に対する熱応力を低減することが可能である。
　＜実施の形態２＞
　図３は、本実施の形態２における半導体装置の断面図である。図４は、本実施の形態２における半導体装置の平面図である。図３に示す半導体装置の断面は、図４の線分Ｂ－Ｂに沿った断面である。なお、図４において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。
　本実施の形態２において、ベース基板３のほぼ中央には、開口部８が設けられている。この開口部８を設けることにより、高周波特性を低減する要因の一つである配線部材４の長さを短くすることができるため、高周波半導体装置に適した構造を実現することができる。
　開口部８において、放熱板３１は絶縁層３２に覆われていない。開口部８は、例えば機械加工で絶縁層３２を切削することにより形成される。また、本実施の形態２ではベース基板３に開口部８を設けているので、導電層３３は実施の形態１で述べた導電パターン３３４を備えない構成である。本実施の形態２において、半導体素子１の下面は、ベース基板３の開口部８において接合材２を介して放熱板３１に接合されている。
　ベース基板３の開口部８および半導体素子１は、第１の封止材７１によって封止されている。第１の封止材７１は例えばエポキシ樹脂である。第１の封止材７１は、実施の形態１で述べた物理的特性を有する。
　開口部８の周辺は、第２の封止材７２によって封止されている。第２の封止材７２は第１の封止材７１よりも柔らかい。第２の封止材７２は例えばシリコーンゲルである。第２の封止材７２は配線部材４を封止する。また、第２の封止材７２は第１の封止材７１の外側から半導体素子１を封止する。第２の封止材７２は、実施の形態１で述べた物理的特性を有する。
　半導体素子１は、ベース基板３の開口部８内に配置されている。本実施の形態２においては、開口部８内に１つの半導体素子１が配置されているが、開口部８内に複数の半導体素子１が配置されていてもよい。複数の半導体素子１を開口部８に配置する場合、複数の半導体素子１は同じ半導体素子であっても良いし、異なる半導体素子でもよい。
　絶縁層３２は、放熱板３１まで到達する深さの開口部８を有しており、ベース基板３単体を平面視した際に、放熱板３１が外部に露出するようになっている。開口部８の数は、半導体素子１と同様に１つ以上であればよく、本実施の形態２では、開口部８が１つの場合を説明している。
　なお、本実施の形態２の半導体装置のその他の構成は、実施の形態１の半導体装置と同じため、説明を省略する。
　＜製造方法＞
　図５から図９は、本実施の形態２における半導体装置の製造工程を示す図である。まず、ベース基板３を用意する。次に、図５に示すように、リフロー方式で電子部品５を導電層３３に接合する。つまり、ベース基板３の導電層３３の導電パターン３３２，３３３上に接合材５１、即ちソルダペーストを配置し、接合材５１に電子部品５を搭載した状態で接合材５１を加熱して溶解させる。
　次に、図６に示すように、半導体素子１を接合材２で放熱板３１に接合する。接合材２は銀（Ａｇ）フィラーをエポキシ樹脂に分散させた導電性接着剤である。半導体素子１を、接合材２を介して放熱板３１に配置した状態において、１５０℃で２時間加熱することにより接合が行われる。
　次に、図７に示すように、半導体素子１の入力側の上面電極９１と導電パターン３３１とをワイヤボンディングによりワイヤ、即ち配線部材４１で接合する。また、半導体素子１の出力側の上面電極９２と導電パターン３３２とをワイヤボンディングによりワイヤ、即ち配線部材４２で接合する。
　次に、図８に示すように、開口部８に対して第１の封止材７１としてエポキシ樹脂をディスペンサにより供給する。１３０℃で１．５時間加熱することによりエポキシ樹脂が硬化する。この結果、第１の封止材７１により、開口部８および半導体素子１が封止される。
　次に、図９に示すように、第１の封止材７１の外側から、第２の封止材７２としてシリコーンゲルを半導体素子周辺に塗付する。１３０℃で３０分加熱することによりシリコーンゲルが硬化する。この結果、第２の封止材７２により第１の封止材７１の外側から半導体素子１が封止される。また、第２の封止材７２により配線部材４が封止される。
　最後に、半導体素子１、配線部材４、電子部品５などを覆うようにキャップ６を導電層３３に接着剤６１で接着する。１２０℃で１時間加熱することにより接着剤６１が硬化する。以上の製造工程を経て、図３に示す半導体装置を得る。
　＜効果＞
　本実施の形態２における半導体装置は、放熱板３１をさらに備え、放熱板３１の一方主面には絶縁層３２の他方主面が接合され、放熱板３１の一方主面には、放熱板３１が絶縁層３２で覆われていない開口部８が設けられ、開口部８において、半導体素子１の下面が放熱板３１の一方主面に接合され、第１の封止材７１は、半導体素子１の少なくとも一部および開口部８を封止する。
　本実施の形態２における半導体装置において、半導体素子１が放熱板３１の上に直接接合された構造になっている。そのため、製造工程でのダイボンド工程および信頼性評価での温度サイクル時において、半導体素子１と放熱板３１との間における熱膨張係数のミスマッチによって、ダイボンド部（即ち、半導体素子１と放熱板３１とを接合する接合材２）に大きな熱応力が発生する。結果として、ダイボンド部にクラックなどが生じ、放熱性が劣化する可能性があった。
　例えば、シリコーンゲルのみで開口部８内部から配線部材４までを封止した場合、シリコーンゲルは比較的柔らかいため、半導体素子１および接合部２を保持する力が小さく、接合部２の劣化を抑制することができない。
　また、例えば、エポキシ樹脂のみで開口部８内部から配線部材４までを封止した場合、放熱板３１を構成するＣｕの熱膨張係数に合わせて調整されたエポキシ樹脂の熱膨張係数は１５ｐｐｍ／Ｋ以上２０ｐｐｍ／Ｋ以下である。一方、絶縁層３２を構成するガラスエポキシの厚さ方向の熱膨張係数は約６０ｐｐｍ／Ｋであるため、温度サイクル時にエポキシ樹脂とガラスエポキシとの界面で剥離が生じやすい。剥離が熱応力の大きな剥離部分の外側へ伝搬することにより、導電層３３表面に接合された配線部材４がダメージを受ける可能性が高い。さらに、熱衝撃試験、断続通電試験などの信頼性試験にてエポキシ樹脂と導電層３３との間においてもエポキシ樹脂の剥離が発生するため、半導体装置の長寿命化が難しいことが確認された。一般的なエポキシ樹脂は、Ａｕなどで形成された導電層３３との密着性があまり良くないため、上記信頼性試験にて連続的に加わる熱応力によって剥離が発生したと考える。加えて、エポキシ樹脂は高いヤング率を有し、配線部材４との密着性が比較的良いため、導電層３３からエポキシ樹脂が剥離する際に、一緒に配線部材４を持ち上げてしまう。これは、実施の形態１のように開口部８がない構造でも同様であり、配線部材４の端部が始点もしくは、終点になるようにエポキシ樹脂で覆ってしまうと、その直下にある導電層３３を起点にエポキシ樹脂の剥離が生じてしまう。
　本実施の形態２では、図３に示すように、ベース板３の開口部８内を比較的硬い第１の封止材７１で封止し、開口部８より外側の配線部材４を比較的柔らかい第２の封止材７２で封止している。半導体素子１と放熱板３１との間の熱膨張係数差によって発生する熱応力の影響を受けやすい接合材２は、比較的硬い第１の封止材７１で補強される。また、比較的柔らかい第２の封止材７２で配線部材４を封止することにより、ベース板３に反りが生じた場合であっても、配線部材４を防塵しかつ配線部材４に対する熱応力を低減することができる。従って、半導体装置の信頼性を向上させることができる。
　また、本実施の形態２における半導体装置の開口部８において、絶縁層３２の一方主面、即ち絶縁層３２の上面は半導体素子１の上面よりも高く配置される。絶縁層３２の上面を半導体素子１の上面よりも高く配置することにより、開口部８から第１の封止材７１が大きく盛り上がることなく、第１の封止材７１で半導体素子１を過不足なく封止することが可能である。
　また、本実施の形態２における半導体装置において、絶縁層３２はガラスエポキシであり、第１の封止材７１はエポキシ樹脂である。エポキシ樹脂はガラスエポキシと密着性が高いため、第１の封止材７１は、開口部８において絶縁層３２の側面３２ａに良好に接着する。結果として、製造工程でのダイボンド工程、信頼性評価での温度サイクルなどで生じる熱応力、反りによって第１の封止材７１が放熱板３１から剥離することを抑制することができる。
　また、本実施の形態２における半導体装置において、第１の封止材７１はエポキシ樹脂であり、第２の封止材７２はシリコーンゲルである。一般的にシリコーンゲルよりもエポキシ樹脂の方が熱伝導率が高いため、エポキシ樹脂で半導体素子１を封止することにより、半導体装置の放熱性が向上する。
　また、本実施の形態２における半導体装置において、半導体素子１と放熱板３１とを接合する接合材２は導電性樹脂であり、導電性樹脂は、エポキシ樹脂、アクリル樹脂、シリコーンゴムのいずれかと、金属フィラーと、を含む。半導体素子１と放熱板３１とを接合する接合材２として、Ａｇ、Ａｕ、Ｃｕなどの金属フィラーを含む導電性接着剤を用いてもよい。導電性接着剤を用いた際のフィレット部の表面には金属フィラーだけでなく、エポキシ、シリコーン、アクリル樹脂が存在しており、はんだフィレットと比較して第１の封止材７１との密着性がより優れる。そのため、第１の封止材７１が接合材２をより強固に保持することが可能になり、半導体装置の信頼性をより向上させることができる。
　また、本実施の形態２における半導体装置において、半導体素子１と放熱板３１とを接合する接合材２は焼結性接合材であってもよい。また、接合材２の表面は多孔質状であってもよい。
　半導体素子１と放熱板３１とを接合する接合材２として、溶剤にマイクロサイズの金属粒子、ナノサイズの金属粒子、もしくは、マイクロサイズとナノサイズの金属粒子を混合した焼結金属ペーストを用いても構わない。焼結金属（例えばＡｇ、Ａｕ、Ｃｕなどの）ペーストは、導電性接着剤と同様に約２００℃以下の低温でダイボンド可能であり、加えて焼結後は金属粒子同士が焼結接合し、金属バルクに近い状態になるため、非常に高い接合性、熱伝導性および耐熱性が得られる。結果として、１７５℃以上の高温動作での信頼性を向上することができる。また、金属焼結材を用いた際のフィレット部の表面には、焼結の際に揮発した溶剤が抜けだした跡である空孔が多数形成され、フィレット部がポーラス構造になっている。そのため、ベース板３の開口部８内に注入された第１の封止材７１が、フィレット部の空孔に食い込み、アンカー効果によって密着性が向上する。そのため、第１の封止材７１が接合材２をより強固に保持することが可能になり、半導体装置の信頼性をより向上させることができる。
　また、上記、焼結金属ペーストに関して、焼結時に加圧が必要なタイプと加圧の不要なタイプがある。加圧が必要なタイプは、チップ形状の半導体素子１の表面を直接、加圧装置で加圧できないため半導体素子１と加圧装置の加圧部との間に緩衝材を設ける必要があった。また、半導体素子１の表面に異物が少しでも付着していると半導体素子１の傷の原因となるため、加圧が必要なタイプは、表面が繊細な高周波半導体素子用の接合材２としてはあまり向いていない。一方で、加圧が不要なタイプの焼結金属ペーストは、仮焼結をするとペーストのタック性が無くなり、加圧タイプと比較して小さい接合強度がより一層小さくなるため、一度の加熱で焼結を完了させることが望ましい。
　＜実施の形態３＞
　図１０は、本実施の形態３における半導体装置の断面図である。図１１は、本実施の形態３における半導体装置の平面図である。図１０に示す半導体装置の断面は、図１１の線分Ｃ－Ｃに沿った断面である。なお、図１１において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。
　本実施の形態３においても、実施の形態２と同様にベース基板３の開口部８が第１の封止材７１で封止されている。本実施の形態３ではさらに、図１０に示すように、絶縁層３２の一方主面（即ち上面）の高さ以上まで、開口部８が第１の封止材７１で満たされている。なお、第１の封止材７１は、導電層３３の側面に接触してもよいが、導電層３３の上面に接触しないように配置されている。
　図１２は、本実施の形態３における半導体装置の変形例を示す断面図である。図１２に示すように、第２の封止材７２が分割された形状で配置されてもよい。この場合、製造工程において、第２の封止材７２は２回に分けて塗布される。第２の封止材７２は２回に分けて塗布することにより、１回あたりの塗布量を低減できるため、配線部材４を過不足なく封止するための塗布量の調整が容易になる。
　なお、本実施の形態３の半導体装置および本実施の形態３の変形例としての半導体装置のその他の構成は、実施の形態２の半導体装置と同じため、説明を省略する。
　＜効果＞
　本実施の形態３における半導体装置において、絶縁層３２の一方主面の高さ以上まで、開口部８が第１の封止材７１で満たされる。これにより、第１の封止材７１と絶縁層３２の側面３２ａとの接触面積が増大するため、第１の封止材７１と放熱板３１との密着性が向上し、半導体装置の信頼性をより向上させることが可能になる。特に、絶縁層３２をガラスエポキシとし、第１の封止材７１をエポキシ樹脂とした場合。エポキシ樹脂はガラスエポキシと密着性が高いため、第１の封止材７１は、開口部８において絶縁層３２の側面３２ａに良好に接着する。そのため、第１の封止材７１と放熱板３１との密着性がより向上し、半導体装置の信頼性をさらに向上させることが可能になる。
　本実施の形態３における密着性向上の効果を確認するため、樹脂密着強度試験（即ちプリンカップ試験）を行った。樹脂密着強度試験においては、ステンレス鋼製のカップ（直径６ｍｍ、高さ４ｍｍ）を、表面をＮｉ又はＡｕでめっきした銅板に搭載してエポキシ樹脂を塗布したものを第１サンプルとした。また、ステンレス鋼製のカップをガラスエポキシ板に搭載してエポキシ樹脂を塗布したものを第２サンプルとした。各サンプルのエポキシ樹脂は推奨の条件にて硬化された。室温と１５０℃の雰囲気のそれぞれにおいて第１サンプルのシェア試験を行った結果、シェア強度は２０ｋｇと１０ｋｇであった。また、室温と１５０℃の雰囲気のそれぞれにおいて第２サンプルのシェア試験を行った結果、シェア強度は４２ｋｇと３８ｋｇであった。上記結果より、エポキシ樹脂のガラスエポキシ板との密着性は、銅板との密着性の２倍以上であることがわかった。また、１５０℃といった高温雰囲気においても高い密着性を維持していることがわかった。上記試験により、第１の封止材７１としてのエポキシ樹脂と、絶縁層３２としてのガラスエポキシとの接触面積を増やすことで、半導体装置の信頼性を向上させることができることを確認できた。
　＜実施の形態４＞
　図１３は、本実施の形態４における半導体装置の断面図である。図１４は、本実施の形態４における半導体装置の平面図である。図１３に示す半導体装置の断面は、図１４の線分Ｄ－Ｄに沿った断面である。なお、図１４において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。
　本実施の形態４においても、実施の形態２と同様にベース基板３の開口部８が第１の封止樹脂７１で封止されている。本実施の形態４において、第１の封止材７１は、配線部材４に接触しないように半導体素子１の一部を封止している。また、第２の封止材７２は、配線部材４の全体を封止している。
　つまり、第１の封止材７１は、半導体素子１の側面と接触しても構わないが、半導体素子１の上面と接触しないように配置されている。ただし、第１の封止材７１が配線部材４の中空部分４ａに接触しない限りは、第１の封止材７１が半導体素子１の上面を覆ってもよい。また、第２の封止材７２は、少なくとも配線部材４の中空部分４ａの全体と接触していればよい。
　また、高周波信号を扱う半導体装置において、半導体基板上に能動素子と受動素子を一括して形成可能なＭＭＩＣ（Ｍｏｎｏｌｉｔｈｉｃ　Ｍｉｃｒｏｗａｖｅ　Ｉｎｔｅｇｒａｔｅｄ　Ｃｉｒｃｕｉｔ）の一般的な構成の１つとしてコプレーナ線路型ＭＭＩＣが知られている。コプレーナ線路型ＭＭＩＣにおいては、半導体素子１の表面に数μｍ程度の微細なエアブリッジが配置されることがある。後に述べる図１９に示すように、半導体素子１は上面の電極９１，９２間にエアブリッジ存在領域１００が設けられている。このエアブリッジ存在領域１００の上方にエアブリッジが設けられる。配線構造の一つであるエアブリッジをエポキシ樹脂のような硬い樹脂で覆う場合を考える。この場合、硬化後のエポキシ樹脂の硬度、あるいは硬化収縮時に生じるエポキシ樹脂の応力によって微細なエアブリッジが潰されてしまう可能性がある。
　このため、図１４に示すように、第１の封止材７１は半導体素子１の表面の全面を覆うのではなく、エアブリッジに接触しないように半導体素子１の上面に接触することなく半導体素子１の一部を封止することが好ましい。
　なお、本実施の形態４の半導体装置のその他の構成は、実施の形態２の半導体装置と同じため、説明を省略する。
　＜効果＞
　本実施の形態４における半導体装置において、第１の封止材７１は、配線部材４の中空部分４ａに接触しないように、半導体素子１の少なくとも一部を封止し、第２の封止材７２は、配線部材４の中空部分４ａの全体と接触する。
　硬い封止材と柔らかい封止材が接触している界面においては、温度サイクル試験およびパワーサイクル試験時に封止材のヤング率および熱膨張の差による応力が集中する可能性がある。また、硬い封止材と柔らかい封止材が接着しているとはいえ、界面において外気からの吸湿量が増加する。多量の吸湿によってワイヤが劣化し、ワイヤ断線を加速させる原因となる可能性がある。本実施の形態４では、第２の封止材７２が配線部材の中空部分４ａと接触する。つまり、第１の封止材７１と第２の封止材７２との界面が配線部材４の中空部分４ａに接触しないため、応力による配線部材４の断線を抑制することができる。また、湿気による配線部材４の劣化を抑制することができる。さらに、柔らかい第２の封止材７２で配線部材４の中空部分４ａの全体を封止しているため、配線部材４が受ける応力の影響を緩和することが可能であり、半導体装置の信頼性をより向上させることができる。
　＜実施の形態５＞
　図１５は、本実施の形態５における半導体装置の平面図である。なお、図１５において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。実施の形態２では、ベース基板３の開口部８全体を第１の封止材７１で封止した。
　一方、本実施の形態５では、図１５に示すように、半導体素子１は平面視で長方形状であり、半導体素子１の四隅および互いに対向する短辺が第１の封止材７１で封止される。また、第１の封止材７１は、半導体素子１の短辺に近い絶縁層３２の側面３２ａにも接触しており、第１の封止材７１は十分な密着強度を有する。なお、本実施の形態５においても、実施の形態４と同様、第１の封止材７１は配線部材４の中空部分４ａに接触しないように配置されるのが望ましい。
　図１５に示すように、開口部８の封止材７１で封止されていない部分は、第２の封止材７２で封止される。また、配線部材４も第２の封止材７２で封止される。本実施の形態５の半導体装置のその他の構成は、実施の形態２の半導体装置と同じため、説明を省略する。
　＜効果＞
　本実施の形態５において、半導体素子１は平面視で長方形状であり、第１の封止材７１は、半導体素子１の四隅を封止し、第１の封止材７１は、平面視で２組の対向する辺のうち、どちらか一方の組の対向する辺に沿って延在する。
　従って、第１の封止材７１が、半導体素子１の四隅および２組の対向する辺のうち、どちらか一方の組の対向する辺を封止することにより、第１の封止材７１で半導体素子１の全体を封止する場合と比較して、より少ない封止材で半導体素子１を放熱板３１に対して密着させて固定することが可能である。
　一般的に、製造工程においてエポキシ樹脂等の樹脂を基板の凹部に流し込む際に空気が巻き込まれやすい。そのため、エポキシ樹脂が硬化した後に封止部分の内部にボイド即ち気泡が形成されてしまう可能性がある。この対策として例えば、基板を予め温めておいて樹脂の粘度を下げることにより、空気の巻き込みを抑制することができる。また、真空引きの機構を追加することにより、硬化前にボイドを除去することができる。しかしながら、いずれの対策も設備改造による追加の設備投資および製造工程の追加が必要になる。そこで、本実施の形態５のように、開口部８内の必要最低限の箇所にのみ第１の封止材７１を配置することで、封止に用いる第１の封止材７１の量を大幅に低減することができる。配置される第１の封止材７１の量を低減することにより、追加の設備投資および製造工程の追加なしで、第１の封止材７１中にボイドが形成される可能性を低減することができる。
　また、本実施の形態５における半導体装置において、第１の封止材７１は、半導体素子１の平面視で２組の対向する辺のうち、辺の長さがより短い組の対向する辺に沿って延在する。図１５に示すように、互いに対向する短辺に沿って第１の封止材７１を配置した場合、互いに対向する長辺に沿って第１の封止材７１を配置した場合と比較して、配置される第１の封止材７１の量が少ない。従って、第１の封止材７１の内部にボイドが発生する可能性をより低減することが可能になる。また、応力が発生する半導体素子１の四隅は第１の封止材７１にて覆われているので、半導体装置の信頼性も十分に確保されている。
　＜実施の形態６＞
　図１６は、本実施の形態６における半導体装置の平面図である。なお、図１６において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。実施の形態５では、半導体素子１の四隅および互いに対向する短辺が第１の封止材７１で封止された。一方、本実施の形態６では、半導体素子１の四隅および互いに対向する長辺が第１の封止材７１で封止される。本実施の形態６の半導体装置のその他の構成は、実施の形態５の半導体装置と同じため、説明を省略する。
　＜効果＞
　本実施の形態６における半導体装置において、第１の封止材７１は、半導体素子１の平面視で２組の対向する辺のうち、辺の長さがより長い組の対向する辺に沿って延在する。本実施の形態６では、互いに対向する短辺に代えて、互いに対向する長辺を第１の封止材７１で封止することにより、少ない量の第１の封止材７１で、半導体素子１および接合材２をより強固に保持することが可能となる。従って、第１の封止材７１の内部にボイドが発生する可能性を低減することと、半導体装置の高い信頼性とを両立することが可能である。
　＜実施の形態７＞
　図１７は、本実施の形態７における半導体装置の平面図である。図１８は、本実施の形態７における半導体装置の断面図である。図１８に示す半導体装置の断面は、図１７の線分Ｅ－Ｅに沿った断面である。なお、図１７において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。また、図１９はエアブリッジ存在領域１００を模式的に示す平面図である。図１９において、第１の封止材７１の図示を省略している。
　実施の形態５では、半導体素子１の四隅および互いに対向する短辺が第１の封止材７１で封止され、実施の形態６では、半導体素子１の四隅および互いに対向する長辺が第１の封止材７１で封止された。一方、本実施の形態７では、半導体素子１の四隅のみが第１の封止材７１で封止される。
　すなわち、実施の形態７の半導体装置は、半導体素子１は平面視で長方形状であり、第１の封止材７１は、半導体素子１の四隅を封止し、第１の封止材７１は、半導体素子１の四隅それぞれで離散し、４箇所存在する。
　第１の封止材７１は半導体素子１の四隅それぞれが露出しないように封止されている。また、第１の封止材７１は、必要最低限の半導体素子１の四隅のみを封止しているため、第１の封止材７１が半導体素子１、接合材２、開口部８の内部の放熱板３１と確実に接触している必要がある。
　一方、高周波特性の劣化をできるだけ防ぐために、第１の封止材７１は、図１９に示すエアブリッジ存在領域１００に接触しないように封止されることが好ましい。実施の形態７の第１の封止材７１は四隅それぞれで離散して形成されているため、上面電極９１，９２間のエアブリッジ存在領域１００に接触することはなく第１の封止材７１によって半導体素子１を封止することができる。
　また、高周波半導体装置に用いられる半導体素子１は、長方形の形状をしていることが多く、正方形と比較して、接合材２を形成するダイボンド処理後の半導体素子１に関し長手方向に沿って傾きが発生しやすい。
　図２０は、本実施の形態７の変形例である半導体装置の平面図である。図２１は、本実施の形態７の変形例である半導体装置の断面図である。図２１に示す半導体装置の断面は、図２０の線分Ｆ－Ｆに沿った断面である。なお、図２０において、図の見易さのために第２の封止材７２およびキャップ６を仮想線で記載している。実施の形態７の変形例では、半導体素子１が長手方向に沿って傾く場合を前提とした構造である。
　図２０及び図２１に示すように、接合材２は、半導体素子１の平面視で２組の対向する辺のうち、辺の長さがより短い組の対向する一方の辺側の膜厚が、他方の辺側の膜厚より薄くなるように設けられる構造を呈している。すなわち、実施の形態７の変形例において、接合材２は、半導体素子１を平面視して対向する短辺のうち、一方の短辺側の膜厚が、他方の短辺側の膜厚より薄くなるように設けられる構造を前提としている。
　本実施の形態７では、第１の封止材７１がディスペンス装置により半導体素子１の４隅に分離して形成されている。すなわち、２つの第１の封止材７１１，７１１及び２つの第１の封止材７１２，７１２により第１の封止材７１を構成している。そして、図２１に示すように、半導体素子１の傾きに対応して第１の封止材７１１，７１２間で塗布量を変化させている。
　図２０及び図２１に示すように、半導体素子１の四隅のうち、ダイボンド層である接合材２が比較的薄く形成されている２隅には、形成量となる塗布量が比較的多い第１の封止材７１２を設け、接合材２が比較的厚く形成されている二隅には塗布量が比較的少ない第１の封止材７１１を設けている。
　このように、実施の形態７の変形例は、接合材２が比較的薄く形成されている一方の短辺における二隅の第１の封止材７１２の形成量となる塗布量が、接合材２が比較的厚く形成されている他方の短辺における二隅の第１の封止材７１１の塗布量よりも大きいことを特徴としている。すなわち、実施の形態７の変形例において、２つの第１の封止材７１１及び２つの第１の封止材７１２から構成される第１の封止材７１は、一方の短辺側における二隅の形成量が、他方の辺側における二隅の形成量よりも大きくなるように設けられる。
　その結果、第１の封止材７１１，７１２間で接合材２に加わる熱応力に対して全体のバランスを取ることが可能になる。また、第１の封止材７１１，７１２の高さが絶縁層３１の形成高さより低く、開口部８内に収まることが望ましい。各部材の物性、サイズによって接合材２に加わる応力は異なるため、シミュレーションなどを用いておおよその応力を事前に想定し、実機での試験によって接合材２に加わる応力を正確に予測した後、各隅において接合材２の厚さに基づき、第１の封止材７１１，７１２それぞれの塗布量を製造前に決定することができる。
　実施の形態７の半導体装置のその他の構成は、実施の形態５および実施の形態６の半導体装置と同じため、説明を省略する。
　＜効果＞
　高周波半導体装置に用いられる半導体素子は、平面視して長方形の形状をしていることが多く、正方形の場合と比較して、接合材２を形成するダイボンド処理後に半導体素子１の長手方向に沿って傾きが発生しやすい。そのため、前述したように、半導体素子１の四隅においてもダイボンド層である接合材２の厚みにバラつきが発生する。一般的に、接合材２の膜厚が厚いと応力緩和性が大きく、接合材２の膜厚が薄いと応力緩和性が小さくなる。そのため、半導体素子１の四隅の接合材２の膜厚がバラつくと、四隅における熱衝撃試験などに対する信頼性もバラついてしまい、最も弱い隅から接合材２が劣化し、信頼性としても最も弱い隅に律速してしまう。
　そこで、図２１に示すように、半導体素子１の傾き、すなわち、接合材２の膜厚に対応して第１の封止材７１１，７１２の形成量である塗布量を変えて設定することで、四隅の応力緩和を均一化することが可能になるため、高い信頼性が得られる。
　なお、実施の形態７は第１の封止材７１が半導体素子１の４隅それぞれで分離して設けられている。従って、接合材２が、半導体素子１を平面視して対向する４隅それぞれで異なる膜厚で設けられる構造を前提とした場合、接合材２の膜厚に対応して半導体素子１の四隅それぞれにおける第１の封止材７１の塗布量を変えて設定することができる。その結果、実施の形態７の半導体装置は、接合材２が４隅それぞれで異なる膜厚で設けられる場合でも、接合材２の四隅の応力緩和を均一化することができる。
　なお、実施の形態１から実施の形態７のそれぞれにおいて、第１の封止材７１は、半導体素子１と直接接触するように半導体素子１の少なくとも一部を封止してもよい。また、第２の封止材７２は、配線部材４と直接接触するように配線部材４を封止してもよい。なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略したりすることが可能である。
　この発明は詳細に説明されたが、上記した説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。
　１　半導体素子、２，５１　接合材、３　ベース基板、３１　放熱板、３２　絶縁層、３２ａ　側面、３３　導電層、３３１，３３２，３３３，３３４　導電パターン、３３１ａ，３３３ａ　外部電極部分、３３１ｂ，３３２ａ　配線部材接合部分、４，４１，４２　配線部材、４ａ　中空部分、５　電子部品、６　キャップ、６１　接着剤、７１　第１の封止材、７２　第２の封止材、８　開口部、９，９１，９２　上面電極、１００　エアブリッジ存在領域。

Claims (21)

  1. 　絶縁層と、
    　前記絶縁層の一方主面に接合された導電層と、
    　前記絶縁層の前記一方主面と上面が同じ方向を向くように配置された半導体素子と、
    　を備え、
    　前記半導体素子の前記上面には上面電極が設けられ、
    　一端が前記半導体素子の前記上面電極に電気的に接合され、他端が前記導電層に電気的に接合され、中空部分を有する配線部材と、
    　第１の封止材と、
    　前記第１の封止材よりも柔らかい第２の封止材と、
    　をさらに備え、
    　前記第１の封止材は、前記半導体素子と接触するように前記半導体素子の少なくとも一部を封止し、
    　前記第２の封止材は、前記配線部材と接触するように前記配線部材を封止する、
    半導体装置。
  2. 　放熱板をさらに備え、
    　前記放熱板の一方主面には前記絶縁層の他方主面が接合され、
    　前記放熱板の前記一方主面には、前記放熱板が前記絶縁層で覆われていない開口部が設けられ、
    　前記開口部において、前記半導体素子の下面が前記放熱板の前記一方主面に接合され、
    　前記第１の封止材は、前記半導体素子の少なくとも一部および前記開口部を封止する、
    請求項１に記載の半導体装置。
  3. 　前記絶縁層の前記一方主面の高さ以上まで、前記開口部が前記第１の封止材で満たされる、
    請求項２に記載の半導体装置。
  4. 　前記開口部において、前記絶縁層の前記一方主面は前記半導体素子の前記上面よりも高く配置される、
    請求項３に記載の半導体装置。
  5. 　前記第１の封止材は、前記配線部材の前記中空部分に接触しないように、前記半導体素子の少なくとも一部を封止し、
    　前記第２の封止材は、前記配線部材の前記中空部分の全体と接触する、
    請求項１から請求項４のいずれか一項に記載の半導体装置。
  6. 　前記配線部材の前記第１の封止材に接触している面積よりも、前記配線部材の前記第２の封止材に接触している面積の方が大きい、
    請求項１から請求項４のいずれか一項に記載の半導体装置。
  7. 　前記第１の封止材は、前記半導体素子の前記上面と接触しないように、前記半導体素子の一部を封止する、
    請求項１から請求項４のいずれか一項に記載の半導体装置。
  8. 　前記配線部材はワイヤである、
    請求項１から請求項７のいずれか一項に記載の半導体装置。
  9. 　前記第２の封止材の曲げ弾性率は、前記第１の封止材の曲げ弾性率よりも小さい、
    請求項１から請求項８のいずれか一項に記載の半導体装置。
  10. 　前記絶縁層はガラスエポキシであり、
    　前記第１の封止材はエポキシ樹脂である、
    請求項１から請求項９のいずれか一項に記載の半導体装置。
  11. 　前記第１の封止材はエポキシ樹脂であり、
    　前記第２の封止材はシリコーンゲルである、
    請求項１から請求項１０のいずれか一項に記載の半導体装置。
  12. 　前記半導体素子と前記放熱板とを接合する接合材は導電性樹脂であり、
    　前記導電性樹脂は、
    　エポキシ樹脂、アクリル樹脂、シリコーンのいずれかと、
    　金属フィラーと、
    　を含む、
    請求項２から請求項４のいずれか一項に記載の半導体装置。
  13. 　前記半導体素子と前記放熱板とを接合する接合材は、焼結性接合材である、
    請求項２から請求項４のいずれか一項に記載の半導体装置。
  14. 　前記半導体素子と前記放熱板とを接合する接合材の表面は多孔質状である、
    請求項２から請求項４のいずれか一項に記載の半導体装置。
  15. 　前記半導体素子は平面視で長方形状であり、
    　前記第１の封止材は、前記半導体素子の四隅を封止し、
    　前記第１の封止材は、前記半導体素子の四隅それぞれで離散して存在する、
    請求項１から請求項１４のいずれか一項に記載の半導体装置。
  16. 　前記半導体素子と前記放熱板とを接合する接合材をさらに備え、
    　前記半導体素子は平面視で長方形状であり、
    　前記第１の封止材は、前記半導体素子の四隅を封止しており、
    　前記接合材は、前記半導体素子の平面視で２組の対向する辺のうち、辺の長さがより短い組の対向する一方の辺側の膜厚が、他方の辺側の膜厚より薄くなるように設けられ、
    　前記第１の封止材は、前記一方の辺側における二隅の形成量が、前記他方の辺側における二隅の形成量よりも大きくなるように設けられる、
    請求項２から請求項４のいずれか一項に記載の半導体装置。
  17. 　前記半導体素子は平面視で長方形状であり、
    　前記第１の封止材は、前記半導体素子の四隅を封止し、
    　前記第１の封止材は、前記半導体素子の平面視で２組の対向する辺のうち、どちらか一方の組の対向する辺に沿って延在する、
    請求項１から請求項１４のいずれか一項に記載の半導体装置。
  18. 　前記第１の封止材は、前記半導体素子の平面視で２組の対向する辺のうち、辺の長さがより短い組の対向する辺に沿って延在する、
    請求項１７に記載の半導体装置。
  19. 　前記第１の封止材は、前記半導体素子の平面視で２組の対向する辺のうち、辺の長さがより長い組の対向する辺に沿って延在する、
    請求項１７に記載の半導体装置。
  20. 　前記半導体素子は高周波信号の増幅又はスイッチングを行う素子である、
    請求項１から請求項１９のいずれか一項に記載の半導体装置。
  21. 　前記半導体素子はワイドバンドギャップ半導体を材料とする、
    請求項２０に記載の半導体装置。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021052068A (ja) * 2019-09-24 2021-04-01 株式会社東芝 パワーモジュール
US11387210B2 (en) 2019-03-15 2022-07-12 Fuji Electric Co., Ltd. Semiconductor module and manufacturing method therefor
US12125756B2 (en) 2021-03-24 2024-10-22 Fuji Electric Co., Ltd. Semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10797039B2 (en) * 2016-12-07 2020-10-06 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming a 3D interposer system-in-package module
FR3090264B1 (fr) * 2018-12-13 2022-01-07 St Microelectronics Grenoble 2 Procédé de montage de composant
JP7159464B2 (ja) * 2019-05-16 2022-10-24 Ｎｇｋエレクトロデバイス株式会社 パワー半導体モジュールおよびその製造方法
US11728238B2 (en) * 2019-07-29 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with heat dissipation films and manufacturing method thereof
JP7454129B2 (ja) * 2020-03-18 2024-03-22 富士電機株式会社 半導体装置
US20230067313A1 (en) * 2021-08-31 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of forming the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582678A (ja) * 1991-09-24 1993-04-02 Sanyo Electric Co Ltd 混成集積回路
JP2000332160A (ja) * 1999-05-24 2000-11-30 Sumitomo Metal Electronics Devices Inc キャビティダウン型半導体パッケージ
JP2008275357A (ja) * 2007-04-26 2008-11-13 Denso Corp 半導体圧力センサ装置
JP2013008720A (ja) * 2011-06-22 2013-01-10 Panasonic Corp 電子デバイスの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910245A (ja) 1982-07-09 1984-01-19 Hitachi Ltd 樹脂封止半導体装置とその製造法
US5012323A (en) * 1989-11-20 1991-04-30 Micron Technology, Inc. Double-die semiconductor package having a back-bonded die and a face-bonded die interconnected on a single leadframe
US5831836A (en) * 1992-01-30 1998-11-03 Lsi Logic Power plane for semiconductor device
JPH07180703A (ja) * 1995-01-12 1995-07-18 Jidosha Denki Kogyo Co Ltd アクチュエータ
JPH098076A (ja) * 1995-06-23 1997-01-10 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP3196821B2 (ja) 1997-01-16 2001-08-06 サンケン電気株式会社 樹脂封止型回路装置
JP2001267340A (ja) 2000-03-16 2001-09-28 Hitachi Ltd 半導体装置の製造方法
JP4492448B2 (ja) 2005-06-15 2010-06-30 株式会社日立製作所 半導体パワーモジュール
US8354688B2 (en) * 2008-03-25 2013-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump
CN103348467B (zh) * 2011-04-22 2016-03-30 三菱电机株式会社 半导体装置
JP2016081943A (ja) 2014-10-09 2016-05-16 三菱電機株式会社 半導体装置及びその製造方法
JP6791621B2 (ja) * 2015-09-11 2020-11-25 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582678A (ja) * 1991-09-24 1993-04-02 Sanyo Electric Co Ltd 混成集積回路
JP2000332160A (ja) * 1999-05-24 2000-11-30 Sumitomo Metal Electronics Devices Inc キャビティダウン型半導体パッケージ
JP2008275357A (ja) * 2007-04-26 2008-11-13 Denso Corp 半導体圧力センサ装置
JP2013008720A (ja) * 2011-06-22 2013-01-10 Panasonic Corp 電子デバイスの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387210B2 (en) 2019-03-15 2022-07-12 Fuji Electric Co., Ltd. Semiconductor module and manufacturing method therefor
JP2021052068A (ja) * 2019-09-24 2021-04-01 株式会社東芝 パワーモジュール
JP7280789B2 (ja) 2019-09-24 2023-05-24 株式会社東芝 パワーモジュール
US12125756B2 (en) 2021-03-24 2024-10-22 Fuji Electric Co., Ltd. Semiconductor device
US12125806B2 (en) 2023-07-07 2024-10-22 Wolfspeed, Inc. Electronic device packages with internal moisture barriers

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