JP6394810B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6394810B1 JP6394810B1 JP2017533648A JP2017533648A JP6394810B1 JP 6394810 B1 JP6394810 B1 JP 6394810B1 JP 2017533648 A JP2017533648 A JP 2017533648A JP 2017533648 A JP2017533648 A JP 2017533648A JP 6394810 B1 JP6394810 B1 JP 6394810B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 229920005989 resin Polymers 0.000 claims abstract description 98
- 239000011347 resin Substances 0.000 claims abstract description 98
- 239000000463 material Substances 0.000 claims abstract description 43
- 238000010521 absorption reaction Methods 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 230000003746 surface roughness Effects 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 230000009477 glass transition Effects 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910001080 W alloy Inorganic materials 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000007788 roughening Methods 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Abstract
Description
ヒートシンクと、
前記ヒートシンクに固定材で固定され、GaNで形成された半導体チップと、
ワイヤを介して前記半導体チップと接続されたリードと、
前記リードの一部、前記ワイヤ、および前記半導体チップを覆うように前記ヒートシンクの上に設けられ、ガラス転移温度が195℃以上であるモールド樹脂と、
を備え、
前記ヒートシンクにおける前記モールド樹脂と重なる表面および前記リードにおける前記モールド樹脂と重なる表面には、表面粗さがRMS=150nm以上の粗化めっきが設けられており、
前記固定材が、ハンダ又は焼結銀であり、
前記モールド樹脂の吸水率が0.24%以下である。
3 半導体チップ
4 回路基板
5 固定材
6 ワイヤ
7 モールド樹脂
22 リード
23 ヒートシンク
24 溝
Claims (4)
- ヒートシンクと、
前記ヒートシンクに固定材で固定され、GaNで形成された半導体チップと、
ワイヤを介して前記半導体チップと接続されたリードと、
前記リードの一部、前記ワイヤ、および前記半導体チップを覆うように前記ヒートシンクの上に設けられ、ガラス転移温度が195℃以上であるモールド樹脂と、
を備え、
前記ヒートシンクにおける前記モールド樹脂と重なる表面および前記リードにおける前記モールド樹脂と重なる表面には、表面粗さがRMS=150nm以上かつRMS=250nm以下の粗化めっきが設けられており、
前記固定材が、ハンダ又は焼結銀であり、
前記モールド樹脂の吸水率が0.24%以下であり、
前記ヒートシンクおよび前記リードの材料が、銅、銅モリブデン合金、銅タングステン合金、またはアルミニウムであり、
前記モールド樹脂の線膨張係数が9〜19ppmである半導体装置。 - 前記半導体チップが、ワイドバンドギャップ半導体材料で形成され、
前記モールド樹脂の熱分解開始温度が300℃以上である請求項1に記載の半導体装置。 - 前記ヒートシンクは、200W/mK以上の熱伝導率を有する材料で形成された請求項1または2に記載の半導体装置。
- 前記ヒートシンクの前記表面の四隅に、前記半導体チップを囲むように伸びる溝が設けられた請求項1〜3のいずれか1項に記載の半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2017/006412 WO2018154635A1 (ja) | 2017-02-21 | 2017-02-21 | 半導体装置 |
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JP6394810B1 true JP6394810B1 (ja) | 2018-09-26 |
JPWO2018154635A1 JPWO2018154635A1 (ja) | 2019-04-11 |
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JP2017533648A Active JP6394810B1 (ja) | 2017-02-21 | 2017-02-21 | 半導体装置 |
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US (1) | US11309231B2 (ja) |
JP (1) | JP6394810B1 (ja) |
KR (1) | KR102232994B1 (ja) |
CN (1) | CN110392924B (ja) |
DE (1) | DE112017007098T5 (ja) |
WO (1) | WO2018154635A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112640096A (zh) * | 2018-09-06 | 2021-04-09 | 三菱电机株式会社 | 半导体装置 |
JP7354550B2 (ja) | 2019-02-08 | 2023-10-03 | 富士電機株式会社 | 半導体モジュールの外部接続部、半導体モジュール、外部接続端子、および半導体モジュールの外部接続端子の製造方法 |
WO2020230457A1 (ja) * | 2019-05-16 | 2020-11-19 | Ngkエレクトロデバイス株式会社 | パワー半導体モジュールおよびその製造方法 |
US20220285242A1 (en) * | 2019-10-15 | 2022-09-08 | Mitsubishi Electric Corporation | Semiconductor device |
JP7418178B2 (ja) | 2019-10-17 | 2024-01-19 | 三菱電機株式会社 | 半導体装置、及び、その製造方法 |
JP7457513B2 (ja) | 2020-02-03 | 2024-03-28 | リンテック株式会社 | 保護膜形成フィルム、保護膜形成用複合シートおよび装置の製造方法 |
US20230352360A1 (en) * | 2022-04-29 | 2023-11-02 | Macom Technology Solutions Holdings, Inc. | Diamond-metal composite high power device packages |
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US11309231B2 (en) | 2022-04-19 |
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JPWO2018154635A1 (ja) | 2019-04-11 |
KR20190102082A (ko) | 2019-09-02 |
CN110392924B (zh) | 2022-11-15 |
WO2018154635A1 (ja) | 2018-08-30 |
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KR102232994B1 (ko) | 2021-03-26 |
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