WO2018146897A1 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
WO2018146897A1
WO2018146897A1 PCT/JP2017/041506 JP2017041506W WO2018146897A1 WO 2018146897 A1 WO2018146897 A1 WO 2018146897A1 JP 2017041506 W JP2017041506 W JP 2017041506W WO 2018146897 A1 WO2018146897 A1 WO 2018146897A1
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Prior art keywords
substrate
liquid
chemical
nozzle
rotation
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PCT/JP2017/041506
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English (en)
French (fr)
Japanese (ja)
Inventor
喬 太田
山田　邦夫
友明 相原
次郎 奥田
昌之 林
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020197020576A priority Critical patent/KR102269436B1/ko
Priority to CN201780083713.0A priority patent/CN110192267B/zh
Publication of WO2018146897A1 publication Critical patent/WO2018146897A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention includes a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a substrate for a solar cell, etc.
  • the present invention relates to a substrate processing technique for performing processing on a substrate simply).
  • Patent Document 1 discloses a cleaning apparatus for cleaning a substrate.
  • the cleaning apparatus includes a first nozzle and a second nozzle that respectively discharge cleaning liquid from the outside above the substrate toward the upper surface of the rotating substrate.
  • the first nozzle applies the first cleaning liquid in the form of a liquid column so as to hit the liquid landing position on the first nozzle side from the center of the substrate along the obliquely downward discharge direction passing through the center of the substrate when the substrate is viewed from above. Discharge.
  • the centrifugal force is weak near the center of the substrate. Therefore, the first cleaning liquid flows from the landing position toward the center of the substrate along a straight line on the substrate that overlaps the ejection direction when the substrate is viewed from above, and passes over the center of the substrate.
  • the first cleaning liquid that has passed the center of the substrate spreads in a liquid film shape and flows toward the peripheral edge of the substrate while being bent downstream in the rotation direction of the substrate.
  • the liquid columnar second cleaning liquid discharged from the outside of the substrate by the second nozzle passes above the center of the substrate and reaches the position on the substrate that does not hit the liquid column and the liquid film of the first cleaning liquid.
  • the landing position of the second cleaning liquid is a position downstream of the landing position of the first cleaning liquid in the rotation direction of the substrate, farther from the center of the substrate than the landing position of the first cleaning liquid, and has a strong centrifugal force. It is the position to act.
  • the second cleaning liquid after landing is directed toward the peripheral edge of the substrate while being bent downstream in the rotation direction of the substrate without disturbing the flow of the first cleaning liquid on the substrate while spreading in the form of a liquid film under the influence of centrifugal force. Flowing.
  • the cleaning apparatus of Patent Document 1 is configured to clean the central portion of the substrate with the first cleaning liquid and to clean the peripheral portion outside the central portion of the substrate with the second cleaning liquid with the above configuration.
  • the cleaning device also improves the cleaning degree by preventing the first cleaning liquid and the second cleaning liquid from interfering with each other on the substrate.
  • the cleaning apparatus of Patent Document 1 it is necessary to prevent the second cleaning liquid discharged from the second nozzle from interfering with the flow of the first cleaning liquid on the substrate.
  • the liquid columnar second cleaning liquid ejected by the second nozzle crosses the liquid columnar portion of the first processing liquid flowing on the substrate from the outside above the substrate obliquely downward. It is necessary to reach the landing position on the opposite side of the second nozzle with respect to the center of the substrate. On the other hand, if the landing position of the second cleaning liquid is too far from the center of the substrate, the range that can be cleaned with the second cleaning liquid becomes narrow.
  • the second cleaning liquid it is necessary for the second cleaning liquid to accurately reach the liquid landing position set at a position where the distance from the center of the substrate is equal to or less than a quarter of the radius of the substrate.
  • the first cleaning liquid needs to be accurately discharged so as not to collide with the second cleaning liquid at a liquid deposition position further inside than the liquid deposition position of the second cleaning liquid. For this reason, it is necessary to strictly set each flow rate (each flow velocity) of the first and second cleaning liquids discharged by the first and second nozzles according to the diameter of each discharge port and the like.
  • the substrate can be processed while controlling the temperature distribution over the entire surface of the substrate to be a desired temperature distribution by supplying a chemical solution preheated to a predetermined temperature over the entire area of the substrate.
  • the present invention has been made to solve these problems, and in a substrate processing apparatus for processing a substrate by discharging a chemical to the surface of a rotating substrate, while supplying the chemical over the entire upper surface of the substrate, the center of the substrate It aims at providing the technique which can improve the uniformity of the film thickness of the chemical
  • a substrate processing apparatus includes a holding member that is rotatable while holding a substrate in a substantially horizontal posture, and a rotation mechanism that rotates the holding member around a rotation axis.
  • a first nozzle that discharges a chemical solution from above the substrate so as to hit a first liquid deposition position in an intermediate region between a central region and a peripheral region of the rotation trajectory of the substrate; and a second nozzle in the intermediate region A second nozzle that discharges the chemical liquid from above the substrate so as to hit the landing position, and the discharge direction when the first nozzle discharges the chemical liquid is from above the first nozzle to the substrate.
  • the radial velocity component of the discharge speed is such that the chemical liquid can flow to the rotating shaft side by overcoming the centrifugal force caused by the rotation of the substrate acting on the chemical liquid on the first liquid landing position.
  • the discharge direction when the second nozzle discharges the chemical solution is the second liquid landing position centered on the rotation axis when viewed from above the second nozzle in the rotation axis direction of the substrate. In the second landing position of the circle that passes It takes a direction having a component directed toward the downstream side in the rotation direction of the substrate in the tangential direction.
  • the substrate processing apparatus which concerns on a 2nd aspect is a substrate processing apparatus which concerns on a 1st aspect, Comprising: The said 1st liquid landing position of the said chemical liquid which the said 1st nozzle discharges, and the said 2nd nozzle which discharges The second liquid landing position of the chemical liquid is the same distance from the rotation axis.
  • the substrate processing apparatus which concerns on a 3rd aspect is a substrate processing apparatus which concerns on a 1st aspect, Comprising: The said 1st liquid landing position of the said chemical liquid which the said 1st nozzle discharges, and said 1st among the peripheral edges of the said board
  • the center point of interest is defined by the midpoint of the point closest to the first liquid landing position
  • the second liquid landing position of the chemical liquid discharged by the second nozzle is more than the first liquid landing position. It is far from the center of interest and closer to the rotational axis than the midpoint of interest.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to third aspects, wherein the first liquid landing position of the chemical liquid ejected by the first nozzle; The second liquid landing position of the chemical liquid ejected by the second nozzle is positioned on the same straight line that forms the diameter of the substrate, with the rotating shaft interposed therebetween.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the second liquid landing position of the chemical liquid ejected by the second nozzle is The chemical liquid discharged from the first nozzle spreads from the first liquid landing position to the periphery and is located on a liquid film formed on the substrate.
  • a substrate processing apparatus includes a holding member that is rotatable while holding a substrate in a substantially horizontal posture, a rotation mechanism that rotates the holding member around a rotation axis, and a rotation locus of the substrate
  • a first nozzle that discharges the chemical solution from above the substrate so as to hit the first liquid deposition position in the intermediate area between the central area and the peripheral area, and a position higher than the substrate so as to hit the second liquid deposition position in the intermediate area
  • a second nozzle that discharges the chemical liquid from the first nozzle, and the first nozzle has an amount of the chemical liquid that is directed from the first liquid deposition position toward the rotating shaft immediately after hitting the first liquid deposition position.
  • the chemical liquid is discharged so as to be larger than the amount of the liquid chemical going from the first liquid landing position to the side opposite to the rotation shaft, and the second nozzle is The discharge direction when discharging the chemical solution is the second direction.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the flow rate of the chemical liquid discharged by the second nozzle is discharged by the first nozzle. More than the flow rate of the chemical solution.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to seventh aspects, wherein a discharge direction when the second nozzle discharges the chemical liquid is the second A downstream side of the rotation direction of the substrate along a tangential direction at the second liquid deposition position of a circle passing through the second liquid deposition position with the rotation axis as a center when viewed from above the nozzle in the rotation axis direction of the substrate. And a component heading from the second liquid landing position to the opposite side of the rotation axis along the radial direction of the substrate perpendicular to the tangent line.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to eighth aspects, wherein each nozzle of the first nozzle and the second nozzle discharges the chemical solution.
  • Each discharge direction at this time is a direction heading obliquely downward from above the substrate when viewed in the radial direction of the substrate from each position opposite to the rotation axis with respect to the nozzles.
  • a substrate processing method includes a rotation step for rotating a substrate about a rotation axis while holding the substrate in a substantially horizontal posture, and a central region and a periphery of a rotation locus of the substrate in parallel with the rotation step.
  • a second discharge step for discharging the chemical liquid from above the substrate so as to hit the second liquid deposition position, and the discharge direction of the chemical liquid discharged in the first discharge step is the rotation of the chemical liquid from above.
  • a direction having a component from the first liquid deposition position toward the rotation axis along the radial direction of the substrate perpendicular to the tangent line, and the tangent line of the discharge speed of the chemical liquid discharged in the first discharge step The velocity component in the direction overcomes the downstream force in the rotation direction of the substrate that acts on the chemical solution on the first liquid deposition position by the rotation of the substrate, so that the chemical solution is upstream in the rotation direction of the substrate.
  • the radial velocity component of the discharge speed overcomes the centrifugal force caused by the rotation of the substrate acting on the chemical liquid on the first liquid deposition position, and the chemical liquid rotates.
  • the discharge direction of the chemical liquid discharged in the second discharge step is such that the chemical liquid is discharged in the second discharge step when the chemical liquid is viewed from above in the rotation axis direction and the rotation axis is the center. 2
  • In the tangential direction in the second Chakueki position of a circle passing through the liquid position is a step of discharging the liquid medicine to the discharge direction having a component directed toward the downstream side in the rotation direction of the substrate.
  • a substrate processing method is the substrate processing method according to the tenth aspect, in the first liquid landing position of the chemical liquid discharged in the first discharge step, and in the second discharge step.
  • the second liquid landing position of the discharged chemical liquid is the same distance from the rotation axis.
  • a substrate processing method is the substrate processing method according to the tenth aspect, wherein the first liquid landing position of the chemical liquid discharged in the first discharge step and a peripheral edge of the substrate
  • the midpoint of interest is defined by the midpoint of the point closest to the first liquid landing position
  • the second liquid landing position of the chemical liquid discharged in the second discharge step is greater than the first liquid landing position. Is far from the rotation axis and closer to the rotation axis than the midpoint of interest.
  • a substrate processing method is the substrate processing method according to any one of the tenth to twelfth aspects, wherein the first liquid landing position of the chemical liquid discharged in the first discharge step is The second liquid deposition position of the chemical liquid ejected in the second ejection step is located on the same straight line that forms the diameter of the substrate, with the rotating shaft interposed therebetween.
  • a substrate processing method is the substrate processing method according to any one of the tenth to thirteenth aspects, wherein the second liquid landing position of the chemical liquid discharged in the second discharge step is The chemical liquid discharged in the first discharge step spreads from the first liquid landing position to the periphery and is positioned on the liquid film formed on the substrate.
  • a substrate processing method includes a rotation step of rotating a substrate about a rotation axis while holding the substrate in a substantially horizontal posture, and a central region and a periphery of a rotation locus of the substrate in parallel with the rotation step.
  • the first discharge step in the intermediate region A second discharge step for discharging the chemical liquid from above the substrate so as to hit the second liquid landing position, and the first discharge step immediately after hitting the first liquid landing position So that the amount of the chemical liquid directed from the first liquid landing position to the opposite side of the rotary shaft immediately after reaching the first liquid landing position is larger than the amount of the chemical liquid directed from the first liquid landing position to the opposite side of the rotation shaft.
  • the discharge direction of the chemical liquid discharged in the second discharge step is a circle passing through the second liquid deposition position with the rotation axis as a center when the chemical liquid is viewed from above in the rotation axis direction. This is a direction having a component toward the downstream side in the rotation direction of the substrate along the tangential direction at the second liquid deposition position.
  • a substrate processing method is the substrate processing method according to any one of the tenth to fifteenth aspects, wherein a flow rate of the chemical liquid discharged in the second discharge step is set in the discharge step. More than the flow rate of the chemical solution to be discharged.
  • a substrate processing method is the substrate processing method according to any one of the tenth to sixteenth aspects, wherein a discharge direction of the chemical liquid discharged in the second discharge step is the chemical liquid.
  • a substrate processing method is the substrate processing method according to any one of the tenth to seventeenth aspects, wherein the chemical solution is used in each discharge step of the first discharge step and the second discharge step.
  • Each of the discharge directions when the liquid is discharged is such that each of the chemical liquids discharged in each of the discharge steps is viewed from the opposite side of the rotation axis in the radial direction of the substrate, and the top of the substrate. It is a direction heading diagonally downward.
  • At least a part of the chemical liquid discharged from the first nozzle is directed to the downstream side in the rotation direction of the substrate acting on the chemical liquid immediately after hitting the first liquid deposition position. Overcoming both the force and the force of centrifugal force, it spreads in the form of a liquid film from the first landing position and flows to the upstream side in the rotation direction of the substrate and to the rotation axis side, and then passes through the central region of the substrate. To reach the periphery of the substrate. Thereby, a large amount of chemical liquid is supplied to the first liquid deposition position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid deposition position.
  • the rotational speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the periphery of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed in the circumferential direction at each position increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquid deposition position than the central area of the substrate, but the film thickness tends to be thinner than the central area of the substrate, while the first liquid deposition position is located in the central area of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that at the first landing position.
  • substrate rather than a 1st liquid deposition position can be improved with a 1st nozzle.
  • most of the chemical liquid discharged from the second nozzle reaches the peripheral edge of the substrate while flowing in the peripheral area of the substrate downstream in the rotation direction of the substrate while spreading in the form of a liquid film from the second liquid deposition position.
  • the chemical solution is supplied to the entire surface of the substrate by the first nozzle and the second nozzle, and the first portion of the substrate is located on the rotation axis side of the first liquid deposition position, that is, the central region of the substrate and the intermediate region of the substrate.
  • the first nozzle can improve the uniformity of the film thickness of the chemical solution supplied to the rotary shaft side portion with respect to the liquid landing position.
  • the first liquid deposition position of the chemical liquid discharged from the first nozzle and the second liquid deposition position of the chemical liquid discharged from the second nozzle are the same distance from the rotation axis. Therefore, it becomes easier to supply the chemicals discharged from both nozzles to the entire surface of the substrate.
  • the first liquid deposition position of the chemical liquid discharged from the first nozzle and the second liquid deposition position of the chemical liquid discharged from the second nozzle are on the same straight line that forms the diameter of the substrate.
  • the rotary shafts are positioned between each other. Therefore, for example, when the chemicals discharged from both nozzles are discharged in parallel and in the same direction when viewed from above the substrate, the discharge direction of the chemical discharged by the second nozzle is set to When viewed from above, it can be a direction having no component toward the center of the substrate. Therefore, the chemical solution can be efficiently supplied from the second nozzle to the peripheral area of the substrate.
  • the second liquid deposition position of the chemical liquid ejected by the second nozzle is formed on the substrate by spreading the chemical liquid ejected by the first nozzle from the first liquid deposition position to the periphery. Located on the liquid film.
  • the chemical liquid discharged from the first nozzle flows from the first liquid deposition position toward the center of the substrate while spreading in the form of a liquid film, and further to the center of the substrate. It becomes easy to reach the peripheral edge of the substrate on the side opposite to the landing position. Thereby, a large amount of chemical liquid is supplied to the first liquid deposition position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid deposition position.
  • the rotational speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the periphery of the substrate.
  • the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed in the circumferential direction at each position increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquid deposition position than the central area of the substrate, but the film thickness tends to be thinner than the central area of the substrate, while the first liquid deposition position is located in the central area of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that at the first landing position. For this reason, the uniformity of the film thickness of the chemical
  • the chemical solution is supplied to the entire surface of the substrate by the first nozzle and the second nozzle, and the first portion of the substrate is located on the rotation axis side of the first liquid deposition position, that is, the central region of the substrate and the intermediate region of the substrate.
  • the first nozzle can improve the uniformity of the film thickness of the chemical solution supplied to the rotary shaft side portion with respect to the liquid landing position.
  • the flow rate of the chemical liquid discharged from the second nozzle is larger than the flow rate of the chemical liquid discharged from the first nozzle, the flow rate from the second nozzle is larger than the peripheral area of the substrate. Can be supplied.
  • the discharge direction when the second nozzle discharges the chemical solution is the second liquid deposition position centered on the rotation axis when viewed from above the second nozzle in the rotation axis direction of the substrate.
  • a component having a component toward the side Therefore, the chemical solution can be efficiently supplied from the second nozzle to the peripheral area of the substrate.
  • the discharge directions when the nozzles of the first nozzle and the second nozzle discharge the chemical solution are from each position on the side opposite to the rotation axis with respect to each nozzle.
  • the direction is obliquely downward from above the substrate.
  • the first nozzle and the second nozzle can discharge the chemical liquid more accurately toward the first liquid deposition position and the second liquid deposition position.
  • At least a part of the chemical liquid discharged in the first discharge step is directed to the downstream side in the rotation direction of the substrate acting on the chemical liquid immediately after hitting the first liquid deposition position.
  • Overcoming the force of both the centrifugal force and the centrifugal force it flows in the form of a liquid film from the first liquid deposition position and flows to the upstream side in the rotation direction of the substrate and to the rotation axis side, and then passes through the central region of the substrate To reach the periphery of the substrate.
  • a large amount of chemical liquid is supplied to the first liquid deposition position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid deposition position.
  • the rotational speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the periphery of the substrate. Further, the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed in the circumferential direction at each position increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquid deposition position than the central area of the substrate, but the film thickness tends to be thinner than the central area of the substrate, while the first liquid deposition position is located in the central area of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that at the first landing position.
  • substrate rather than a 1st liquid deposition position can be improved by a 1st discharge step. Further, most of the chemical liquid discharged in the second discharge step reaches the peripheral edge of the substrate while flowing in the peripheral area of the substrate downstream in the rotation direction of the substrate while spreading in the form of a liquid film from the second liquid deposition position.
  • the chemical solution is supplied to the entire surface of the substrate by the first discharge step and the second discharge step, and the rotation axis side portion from the first liquid deposition position, that is, the central region of the substrate and the intermediate region of the substrate
  • the uniformity of the film thickness of the chemical solution supplied to the rotary shaft side portion from the first liquid deposition position can be improved by the first discharge step.
  • the chemical liquid discharged in the first discharge step flows from the first liquid deposition position toward the center of the substrate while spreading in the form of a liquid film, and further to the center of the substrate. It becomes easy to reach the peripheral edge of the substrate on the side opposite to the one liquid deposition position. Thereby, a large amount of chemical liquid is supplied to the first liquid deposition position, and a smaller amount of chemical liquid is supplied to each position of the central portion of the substrate than the first liquid deposition position.
  • the rotational speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the periphery of the substrate.
  • the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed in the circumferential direction at each position increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquid deposition position than the central area of the substrate, but the film thickness tends to be thinner than the central area of the substrate, while the first liquid deposition position is located in the central area of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that at the first landing position. For this reason, the uniformity of the film thickness of the chemical
  • a part of the chemical liquid discharged in the second discharge step reaches the peripheral edge of the substrate while flowing in the peripheral area of the substrate downstream in the rotation direction of the substrate while spreading in a liquid film form from the second liquid deposition position. Accordingly, the chemical solution is supplied to the entire surface of the substrate by the first discharge step and the second discharge step, and the rotation axis side portion from the first liquid deposition position, that is, the central region of the substrate and the intermediate region of the substrate.
  • the uniformity of the film thickness of the chemical solution supplied to the rotary shaft side portion from the first liquid deposition position can be improved by the first discharge step.
  • FIG. 2 is a schematic top view for explaining a configuration example of the substrate processing apparatus of FIG. 1. It is a figure for demonstrating an example of the intermediate area of the upper surface of a board
  • the vertical direction is the vertical direction, and the substrate side is above the spin chuck.
  • FIGS. 1 and 2 are diagrams for explaining the configuration of the substrate processing apparatus 1 according to the embodiment. 1 and 2 are a schematic side view and a schematic top view of the substrate processing apparatus 1.
  • the substrate 9 is rotated around the rotation axis a ⁇ b> 1 by the spin chuck 21 in a predetermined rotation direction (the direction of the arrow AR ⁇ b> 1) with the nozzles 51 and 52 disposed at the processing position above the substrate 9.
  • the state is shown.
  • the nozzle 51 (52) discharges the liquid columnar chemical liquid L1 (L2) onto the upper surface of the substrate 9.
  • descriptions of some components such as the control unit 130 among the components of the substrate processing apparatus 1 are omitted.
  • the surface shape of the substrate 9 is substantially circular. Loading and unloading of the substrate 9 to and from the substrate processing apparatus 1 is performed by a robot or the like in a state where the nozzles 51 and 52 are arranged at the retracted position by a nozzle moving mechanism (not shown). The substrate 9 carried into the substrate processing apparatus 1 is detachably held by the spin chuck 21.
  • the substrate processing apparatus 1 includes a rotation holding mechanism 2, a processing unit 5, and a control unit 130. Each of these units 2 and 5 is electrically connected to the control unit 130 and operates in response to an instruction from the control unit 130.
  • the control unit 130 for example, the same one as a general computer can be adopted. That is, the control unit 130 stores, for example, a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk to keep.
  • the CPU as the main control unit performs arithmetic processing according to the procedure described in the program, thereby controlling each unit of the substrate processing apparatus 1.
  • the radius of the substrate 9 is, for example, 150 mm.
  • the substrate processing apparatus 1 processes the substrate 9 by supplying a processing liquid from the nozzles 51 and 52 to the upper surface of the substrate 9.
  • FIG. 3 is a diagram for explaining an example of the intermediate region K2 on the upper surface of the substrate 9.
  • the intermediate area K2 is an area between the central area K1 and the peripheral area K3 in the rotation locus of the substrate 9.
  • the length from the center c1 of the substrate 9 to the boundary between the central region K1 and the intermediate region K2 is, for example, one third of the radius of the substrate 9.
  • the width of the peripheral area K3, that is, the length from the boundary between the intermediate area K2 and the peripheral area K3 to the peripheral edge of the substrate 9, is, for example, one third of the radius of the substrate 9. Therefore, in this case, the width of the intermediate area K2, that is, the length from the boundary between the central area K1 and the intermediate area K2 to the boundary between the intermediate area K2 and the peripheral area K3 is 3/3 of the radius of the substrate 9. 1.
  • the rotation holding mechanism 2 is a mechanism that can rotate while holding the substrate 9 in a substantially horizontal posture with one main surface thereof facing upward.
  • the rotation holding mechanism 2 rotates the substrate 9 about a vertical rotation axis a1 passing through the center c1 of the main surface.
  • the rotation holding mechanism 2 rotates the substrate 9 at a rotation speed of 200 rpm to 400 rpm, for example.
  • the rotation holding mechanism 2 includes a spin chuck (“holding member”, “substrate holding part”) 21 that is a disk-like member smaller than the substrate 9.
  • the spin chuck 21 is provided such that the upper surface thereof is substantially horizontal and the center axis thereof coincides with the rotation axis a1.
  • a cylindrical rotary shaft 22 is connected to the lower surface of the spin chuck 21.
  • the rotating shaft portion 22 is arranged in such a posture that its axis is along the vertical direction.
  • the axis of the rotary shaft portion 22 coincides with the rotary shaft a1.
  • a rotation drive unit (for example, a servo motor) 23 is connected to the rotation shaft unit 22.
  • the rotation drive unit 23 drives the rotation shaft unit 22 to rotate about its axis.
  • the spin chuck 21 can rotate around the rotation axis a ⁇ b> 1 together with the rotation shaft portion 22.
  • the rotation drive unit 23 and the rotation shaft unit 22 are a rotation mechanism 231 that rotates the spin chuck 21 about the rotation axis a1.
  • the rotating shaft part 22 and the rotation drive part 23 are accommodated in a cylindrical casing (not shown).
  • a through hole (not shown) is provided at the center of the spin chuck 21 and communicates with the internal space of the rotary shaft 22.
  • a pump (not shown) is connected to the internal space via a pipe (not shown) and an on-off valve.
  • the pump and the on-off valve are electrically connected to the control unit 130.
  • the control unit 130 controls operations of the pump and the on-off valve.
  • the pump can selectively supply a negative pressure and a positive pressure under the control of the control unit 130.
  • the pump supplies a negative pressure with the substrate 9 placed on the upper surface of the spin chuck 21 in a substantially horizontal posture, the spin chuck 21 holds the substrate 9 by suction from below.
  • the pump supplies positive pressure, the substrate 9 can be removed from the upper surface of the spin chuck 21.
  • the processing unit (“chemical supply mechanism”) 5 performs processing on the substrate 9 held on the spin chuck 21. Specifically, the processing unit 5 supplies a chemical solution to the upper surface of the substrate 9 held on the spin chuck 21.
  • the processing unit 5 includes nozzles 51 and 52 and a chemical solution supply unit 53.
  • the nozzles 51 and 52 are attached to the tip of a long arm provided in a nozzle movement mechanism (not shown), for example.
  • the nozzle moving mechanism is a mechanism for moving the nozzles 51 and 52 between the processing position and the retracted position.
  • the processing unit 5 includes a nozzle 51 (52) that discharges the chemical liquid L1 (L2) from above the substrate 9 onto the upper surface (surface) of the substrate 9.
  • the nozzles 51 (52) each have, for example, a cylindrical tip side portion extending toward the top surface of the substrate 9, and hit the top surface of the substrate 9 from a discharge port formed at the tip of the tip side portion. Thus, the chemical liquid L1 (L2) is discharged.
  • the nozzle 51 discharges the chemical liquid L1 from above the substrate 9 so as to hit the liquid deposition position P1 in the intermediate region K2 of the substrate 9.
  • the nozzle 52 discharges the chemical liquid L2 from above the substrate 9 so as to hit the liquid deposition position P2 in the intermediate area K2.
  • the discharge directions u1 and v1 when the nozzles 51 and 52 discharge the chemical liquids L1 and L2 are viewed in the radial direction of the substrate 9 from the positions opposite to the rotation axis a1 with respect to the nozzles 51 and 52, respectively. This is a direction from the upper side of the substrate 9 toward the diagonally downward direction.
  • the chemical liquid supply unit 53 supplies the chemical liquids L1 and L2 to the nozzles 51 and 52.
  • the chemical solution supply unit 53 is configured by combining chemical supply sources 531 and 532, pipes 541 and 542, and on-off valves 521 and 522.
  • the chemical solution supply source 531 (532) supplies the chemical solution L1 (L2) to the nozzle 51 (52) via the pipe 541 (542).
  • An on-off valve 521 (522) is provided in the middle of the route of the pipe 541 (542).
  • the chemical liquids L1 and L2 for example, SPM, SC-1, DHF, SC-2 and the like are used.
  • the chemical liquid L1 and the chemical liquid L2 are the same type of chemical liquid.
  • the nozzle 51 When the chemical liquid L1 (L2) is supplied from the chemical liquid supply source 531 (532) to the nozzle 51 (52), the nozzle 51 (52) discharges the chemical liquid L1 (L2) as a liquid columnar liquid flow.
  • the on-off valve 521 (522) included in the chemical solution supply unit 53 is opened and closed under the control of the control unit 130 by a valve opening / closing mechanism (not shown) that is electrically connected to the control unit 130. More specifically, the opening / closing valve 521 (522) changes its opening degree according to the control of the control unit 130, so that the nozzle 51 (from the chemical supply source 531 (532) via the pipe 541 (542) is changed.
  • the flow rate of the chemical liquid L1 (l2) supplied to 52) can be changed.
  • the valve opening / closing mechanism can independently change the opening degree of the opening / closing valves 521 and 522 under the control of the control unit 130.
  • the flow rate of the chemical liquid L1 discharged from the nozzle 51 and the flow rate of the chemical liquid L2 discharged from the nozzle 52 are controlled independently of each other.
  • the discharge mode (specifically, the discharge start timing, discharge end timing, discharge flow rate, etc.) of the chemical liquid L1 (L2) from the nozzle 51 (52) is controlled by the control unit 130. . That is, the nozzle 51 (52) of the processing unit 5 discharges the liquid flow of the chemical liquid L1 (L2) so as to hit the upper surface of the substrate 9 rotating around the rotation axis a1 under the control of the control unit 130.
  • the discharge direction u1 when the nozzle 51 discharges the chemical liquid L1 is a liquid landing position centered on the rotation axis a1 when viewed from above the nozzle 51 in the direction of the rotation axis a1 of the substrate 9.
  • This is a direction having a component (“direction component”) u3 from the position P1 toward the rotation axis a1.
  • the horizontal speed component of the discharge speed when the nozzle 51 discharges the chemical liquid L1 is the rotational direction of the substrate 9 along the tangential direction at the liquid landing position P1 of the circle passing through the liquid landing position P1 with the rotation axis a1 as the center.
  • This is a velocity component obtained by synthesizing the velocity component in the tangential direction toward the upstream side and the velocity component in the radial direction from the liquid landing position P1 toward the rotation axis a1 along the radial direction of the substrate 9 orthogonal to the tangential direction.
  • the velocity component in the direction of the tangent of the discharge speed when the nozzle 51 discharges the chemical liquid L1 is a downstream force in the rotation direction of the substrate 9 that acts on the chemical liquid L1 on the liquid deposition position P1 by the rotation of the substrate 9.
  • the size is such that the chemical liquid L1 can overcome and flow upstream in the rotation direction of the substrate 9.
  • the radial speed component of the discharge speed has such a magnitude that the chemical liquid L1 can flow toward the rotation axis a1 by overcoming the centrifugal force caused by the rotation of the substrate 9 acting on the chemical liquid L1 on the liquid deposition position P1. .
  • the chemical liquid L1 discharged from the nozzle 51 overcomes both the force on the downstream side in the rotation direction of the substrate acting on the chemical liquid and the centrifugal force immediately after hitting the liquid landing position P1.
  • the liquid flows from the liquid deposition position P1 to the upstream side in the rotation direction of the substrate 9 and to the rotation axis a1 side while spreading in the form of a liquid film, and then passes through the central region of the substrate and reaches the periphery of the substrate.
  • at least a part of the chemical liquid L1 is temporarily bent from the liquid landing position P1 toward the center side of the substrate 9 toward the upstream side in the rotation direction of the substrate 9 and then in the rotation direction of the substrate 9.
  • the chemical liquid L1 is discharged so as to be larger than the amount of the chemical liquid L1 going to the opposite side to the rotation axis a1. Further, since the centrifugal force due to the rotation of the substrate 9 does not act strongly on the chemical liquid L1 immediately after being discharged to the liquid landing position P1, there is an advantage that the temperature of the chemical liquid L1 is not easily lowered.
  • the discharge direction v1 when the nozzle 52 discharges the chemical liquid L2 is a liquid landing position P2 of a circle passing through the liquid landing position P2 with the rotation axis a1 as the center when viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9.
  • This is a direction having a component (“direction component”) v2 that goes to the downstream side in the rotation direction of the substrate 9 along the tangential direction.
  • the chemical liquid L2 discharged from the nozzle 52 is strongly affected by the centrifugal force immediately after hitting the liquid landing position P2, and is arcuate toward the peripheral edge of the substrate 9 while being bent downstream in the rotation direction of the substrate 9. Along the path, it flows while spreading in the form of a liquid film (see FIG. 4).
  • a part of the chemical liquid L1 ejected from the nozzle 51 reaches the peripheral edge of the substrate 9 through the central portion of the substrate 9 while spreading in a liquid film form from the liquid deposition position P1, and is ejected from the nozzle 52.
  • a part of the chemical liquid L2 reaches the peripheral portion of the substrate 9 while flowing in the peripheral area K3 of the substrate 9 downstream in the rotation direction of the substrate 9 while spreading in a liquid film form from the liquid deposition position P2.
  • the virtual circle 201 passes through both the liquid landing positions P1 and P2 with the center c1 (rotation axis a1) of the substrate 9 as the center. That is, the liquid landing position P1 and the liquid landing position P2 are positions at the same distance from the rotation axis a1. Further, the chemical liquids L1 and L2 flow while spreading in a liquid film shape. Accordingly, the liquid film formed in the vicinity of the liquid landing position P1 by the chemical liquid L1 and the liquid film formed in the vicinity of the liquid landing position P2 by the chemical liquid L2 extend in substantially the same range in the radial direction of the substrate 9. Accordingly, it becomes easier to supply the chemicals L1 and L2 discharged from both nozzles to the entire surface of the substrate 9, respectively.
  • FIG. 5 is a diagram showing an example of the relationship between the radius of the substrate 9 and heat loss in a graph format.
  • the heat loss increases from the center c1 of the substrate 9 toward the periphery.
  • the rate of increase in heat loss is relatively low, but in the range over about 130 mm radius, the heat loss increases exponentially toward the periphery. Therefore, in order to make the temperature distribution of the substrate uniform by the chemical solution supplied to the upper surface of the substrate, the amount of the chemical solution supplied to the peripheral portion of the substrate is increased compared to the chemical solution supplied to the central portion of the substrate. There is a need.
  • FIG. 6 is a graph showing an example of the relationship between the chemical liquid ejection mode and the substrate temperature distribution in the substrate processing apparatus 1 having the configuration shown in FIG.
  • a temperature distribution indicated by a square indicates a temperature distribution of the substrate 9 when the chemical liquid L1 is discharged from only the nozzle (“first nozzle”) 51 of the nozzles 51 and 52.
  • the temperature distribution indicated by the black diamonds indicates the temperature distribution of the substrate 9 when the chemical liquids L1 and L2 are discharged from both nozzles 51 and 52.
  • the rotation speed of the substrate 9 is 200 rpm, and the discharge flow rate of the chemical liquid L1 partially flowing from the liquid deposition position P1 toward the center c1 is 2 L / min.
  • the discharge flow rate of the chemical liquid L2 that flows mainly from the liquid landing position P2 to the peripheral side of the substrate 9 is 3 L / min. It is. That is, the flow rate of the chemical liquid L2 discharged from the nozzle 52 is larger than the flow rate of the chemical liquid L1 discharged from the nozzle 51.
  • the relationship between the discharge flow rate X of the chemical liquid L1 and the discharge flow rate Y of the chemical liquid L2 is that the area of the center c1 side of the substrate 9 from the virtual circle 201 (see FIG. 2) is Acm 2 ,
  • the area of the part is Bcm 2 , it is expressed by the equation (1).
  • ⁇ is a variable whose value varies depending on the wind speed when the atmosphere in a chamber (not shown) that accommodates the substrate processing apparatus 1 is exhausted from the chamber, the number of rotations of the substrate 9, and the like.
  • the liquid deposition position P ⁇ b> 2 of the chemical liquid L ⁇ b> 2 is preferably a liquid that the chemical liquid L ⁇ b> 1 extends from the liquid deposition position P ⁇ b> 1 to the periphery and is formed on the substrate 9. Located on the membrane.
  • FIG. 10 is a graph showing an example of the film thickness distribution in the radial direction of the substrate 9 of the chemical liquids L1 and L2 discharged from the nozzles 51 and 52.
  • the chemical liquid L1 discharged from the nozzle 51 to the liquid deposition position P1 flows from the liquid deposition position P1 to the upstream side in the rotation direction of the substrate 9 while spreading in the form of a liquid film, and to the rotation axis a1 side.
  • And passes through the central region K1 of the substrate 9 to reach the periphery of the substrate 9.
  • a large amount of chemical liquid is supplied to the liquid landing position P1, and a small amount of chemical liquid L1 is supplied to each position of the central portion of the substrate 9.
  • the rotational speed in the circumferential direction of each part of the substrate 9 increases from the rotation axis a1 toward the periphery of the substrate 9. Further, the chemical liquids L1 and L2 supplied to each position of the substrate 9 are stretched in the circumferential direction and the film thickness is reduced as the rotational speed in the circumferential direction at each position increases. And the rotational speed of the circumferential direction of the board
  • the uniformity of the film thickness of the chemical liquid L ⁇ b> 1 in the portion of the surface of the substrate 9 closer to the center of the substrate 9 than the liquid landing position P ⁇ b> 1 can be improved by the nozzle 51.
  • the heat loss of the substrate 9 rapidly increases from the center side to the peripheral side of the substrate 9, but the chemical liquid L ⁇ b> 2 discharged from the second nozzle is mainly the peripheral region K ⁇ b> 3 of the substrate 9. Therefore, the chemical liquids L1 and L2 supplied to the peripheral area K3 of the substrate 9 can be increased compared to the chemical liquid L1 supplied to the central portion of the substrate 9. Therefore, the uniformity of the temperature distribution on the surface of the substrate 9 can be improved.
  • Example of arrangement relationship of nozzles 51 and 52> 7 to 9 are diagrams showing examples of other arrangement relationships of the nozzles 51 and 52 of the substrate processing apparatus 1 different from the arrangement relationship shown in FIG. 7 to 9, the nozzle 51 discharges the chemical liquid L1 from the same position as the nozzle 51 shown in FIG. 2 to the landing position P1 in the same discharge manner.
  • the landing position P ⁇ b> 2 of the chemical liquid L ⁇ b> 2 is farther from the rotation axis a ⁇ b> 1 than the landing position P ⁇ b> 1 of the chemical liquid L ⁇ b> 1 and the liquid deposition position P ⁇ b> 1 and the peripheral edge of the substrate 9. It is closer to the rotation axis a1 than the midpoint ("interesting midpoint") with the point closest to the position P1.
  • the virtual circle 202 passes through the midpoint with the center c1 as the center, and the virtual circle 201 passes through the liquid landing position P1 with the center c1 as the center.
  • the landing position P1 of the chemical liquid L1 discharged from the nozzle 51 and the landing position P2 of the chemical liquid L2 discharged from the nozzle 52 are on the same straight line that forms the diameter of the substrate 9.
  • the rotary shafts a1 are respectively positioned with being sandwiched between them.
  • the discharge direction v1 when the nozzle 52 discharges the chemical liquid L2 is the liquid landing position with the rotation axis a1 as the center when viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9.
  • FIG. 11 is a flowchart showing an example of the operation of the substrate processing apparatus 1.
  • the substrate processing apparatus 1 processes the substrate 9 with the chemical liquids L1 and L2 along this flowchart. Prior to the start of the operation according to this flowchart, the substrate 9 is held in advance by the spin chuck 21.
  • the rotation mechanism 231 starts rotation of the substrate 9 held by the spin chuck 21 by starting rotation of the spin chuck 21 under the control of the control unit 130 (step S10 in FIG. 11).
  • the valve opening / closing mechanism of the processing unit 5 opens the opening / closing valve 521 at a predetermined opening degree under the control of the control unit 130, so that the nozzle 51 is deposited in the intermediate region K ⁇ b> 2 of the rotation trajectory of the substrate 9.
  • the discharge of the chemical liquid L1 is started so as to hit the position P1 (step S20), and the valve opening / closing mechanism opens the opening / closing valve 522 at a predetermined opening degree under the control of the control unit 130, so that the nozzle 52 is in the intermediate region K2.
  • the discharge of the chemical liquid L2 is started so as to hit the liquid landing position P2 at (step S30).
  • the discharge direction of the chemical liquid L1 discharged in step S20 is along the tangential direction at the liquid landing position P1 of a circle passing through the liquid landing position P1 with the rotational axis a1 as the center when the chemical liquid L1 is viewed from above in the direction of the rotational axis a1.
  • the component has a component toward the upstream side in the rotation direction of the substrate 9 and a component toward the rotation axis a1 from the liquid landing position P1 along the radial direction of the substrate 9 orthogonal to the tangent line.
  • step S20 the velocity component in the tangential direction of the discharge speed of the chemical liquid L1 discharged from the nozzle 51 overcomes the force in the downstream direction of the rotation direction of the substrate 9 acting on the chemical liquid on the liquid landing position P1 by the rotation of the substrate 9.
  • the chemical solution has a size that can flow upstream in the rotation direction of the substrate 9.
  • the radial speed component of the discharge speed of the chemical liquid L1 has such a magnitude that the chemical liquid L1 can flow toward the rotation axis a1 by overcoming the centrifugal force caused by the rotation of the substrate 9 acting on the chemical liquid L1 on the liquid landing position P1.
  • the nozzle 51 preferably has a liquid landing position P1 immediately after the amount of the chemical liquid L1 directed from the liquid landing position P1 toward the rotation axis a1 immediately after hitting the liquid landing position P1 hits the liquid landing position P1.
  • the chemical liquid L1 is discharged so as to be larger than the amount of the chemical liquid L1 going to the opposite side to the rotation axis a1.
  • the discharge direction of the chemical liquid L2 discharged from the nozzle 52 in step S30 is a tangential direction at the liquid landing position P2 of a circle passing through the liquid landing position P2 with the rotational axis a1 as the center when the chemical liquid L2 is viewed from above in the direction of the rotational axis a1.
  • the control unit 130 waits for the time required for processing with the chemical liquids L1 and L2 to elapse, causes the valve opening and closing mechanism of the processing unit 5 to close the on-off valves 521 and 522, and controls the chemical liquids L1 and L2 by the nozzles 51 and 52. Discharge is stopped (step S40), and then the rotation mechanism 231 stops the rotation of the spin chuck 21 to stop the rotation of the substrate 9 (step S50).
  • the discharge direction u1 when the nozzle 51 discharges the chemical liquid L1 is viewed from above the nozzle 51 in the direction of the rotation axis a1 of the substrate 9, A component u2 that goes upstream in the rotation direction of the substrate 9 along the tangential direction at the liquid landing position P1 of a circle that passes through the liquid landing position P1 with the rotation axis a1 as the center, and a radial direction of the substrate 9 that is orthogonal to the tangent line. And a direction having a component u3 from the liquid landing position P1 toward the rotation axis a1.
  • the velocity component in the tangential direction of the discharge speed when the nozzle 51 discharges the chemical liquid L1 overcomes the downstream-direction force in the rotation direction of the substrate 9 that acts on the chemical liquid L1 on the liquid landing position P1 by the rotation of the substrate 9.
  • the chemical liquid L1 has such a size that it can flow upstream in the rotation direction of the substrate 9.
  • the radial speed component of the discharge speed has such a magnitude that the chemical liquid L1 can flow toward the rotation axis a1 by overcoming the centrifugal force caused by the rotation of the substrate 9 acting on the chemical liquid L1 on the liquid deposition position P1. .
  • the discharge direction v1 when the nozzle 52 discharges the chemical liquid L2 is a liquid landing position P2 of a circle passing through the liquid landing position P2 with the rotation axis a1 as the center when viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9.
  • This is a direction having a component v ⁇ b> 2 toward the downstream side in the rotation direction of the substrate 9 along the tangential direction.
  • the chemical liquid L2 is strongly affected by the centrifugal force immediately after it hits the liquid landing position P2, and is bent along the arcuate path toward the periphery of the substrate 9 while bending downstream in the rotation direction of the substrate 9. It flows while spreading into a film.
  • a part of the chemical liquid L1 ejected from the nozzle 51 reaches the peripheral edge of the substrate 9 through the central portion of the substrate 9 while spreading in a liquid film form from the liquid deposition position P1, and is ejected from the nozzle 52.
  • a part of the chemical liquid L2 reaches the peripheral portion of the substrate 9 while flowing in the peripheral area K3 of the substrate 9 downstream in the rotation direction of the substrate 9 while spreading in a liquid film form from the liquid deposition position P2. For this reason, the chemical liquids L1 and L2 discharged from the nozzles 51 and 52 are supplied to the entire surface of the substrate 9 as a whole.
  • the heat loss of the substrate 9 rapidly increases from the center side to the peripheral side of the substrate 9, but the chemical liquid L ⁇ b> 2 discharged from the second nozzle is mainly the peripheral region K ⁇ b> 3 of the substrate 9. Therefore, the amount of the chemicals L1 and L2 supplied to the peripheral area K3 of the substrate 9 can be increased.
  • medical solution L2 which the nozzle 52 discharges are the same distance from the rotating shaft a1. is there. Accordingly, it becomes easier to supply the chemicals L1 and L2 discharged from both nozzles to the entire surface of the substrate 9, respectively.
  • the landing position P1 of the chemical liquid L1 discharged from the nozzle 51 and the landing position P2 of the chemical liquid L2 discharged from the nozzle 52 are the same as the diameter of the substrate 9.
  • the rotary shafts a1 are respectively positioned on a straight line with the rotation axis a1 interposed therebetween. Therefore, for example, when the chemical liquids L1 and L2 discharged from both nozzles are discharged in parallel and in the same direction as viewed from above the substrate 9, the discharge direction of the chemical liquid L2 discharged from the nozzle 52 v1 can be a direction having no component toward the center of the substrate 9 when viewed from above the substrate 9. Accordingly, the chemical liquid L2 can be efficiently supplied from the nozzle 52 to the peripheral area K3 of the substrate 9.
  • the liquid landing position P2 of the chemical liquid L2 discharged from the nozzle 52 is formed on the substrate 9 by spreading the chemical liquid L1 discharged from the nozzle 51 from the liquid landing position P1 to the periphery. Located on the liquid film.
  • the liquid landing position P2 is located on a portion of the substrate 9 other than the liquid film formed by the chemical liquid L1 discharged from the nozzle 51, the liquid splash of the chemical liquid L2 discharged from the nozzle 52 is reduced. it can.
  • the amount of the chemical liquid L1 from the liquid landing position P1 toward the rotation axis a1 immediately after hitting the liquid landing position P1 hits the liquid landing position P1.
  • the chemical liquid L1 is discharged so as to be larger than the amount of the chemical liquid L1 going from the liquid landing position P1 to the opposite side of the rotation axis a1, and the discharge direction v1 when the nozzle 52 discharges the chemical liquid L2 is
  • the substrate 9 moves toward the downstream side in the rotation direction of the substrate 9 along the tangential direction at the liquid deposition position P2 of the circle passing through the liquid deposition position P2 with the rotation axis a1 as the center.
  • the rotational speed in the circumferential direction of each part of the substrate increases from the rotation axis toward the periphery of the substrate.
  • the chemical solution supplied to each position of the substrate is stretched in the circumferential direction as the rotational speed in the circumferential direction at each position increases, and the film thickness decreases. Therefore, a larger amount of chemical solution is supplied to the first liquid deposition position than the central area of the substrate, but the film thickness tends to be thinner than the central area of the substrate, while the first liquid deposition position is located in the central area of the substrate. Although a smaller amount of the chemical solution is supplied, the film thickness is less likely to be thinner than that at the first landing position. For this reason, the uniformity of the film thickness of the chemical
  • the chemical solution is supplied to the entire surface of the substrate by the first nozzle and the second nozzle, and the first portion of the substrate is located on the rotation axis side of the first liquid deposition position, that is, the central region of the substrate and the intermediate region of the substrate.
  • the first nozzle can improve the uniformity of the film thickness of the chemical solution supplied to the rotary shaft side portion with respect to the liquid landing position.
  • the heat loss of the substrate 9 rapidly increases from the center side to the peripheral side of the substrate 9, but the chemical liquid L ⁇ b> 2 discharged from the second nozzle is mainly the peripheral region K ⁇ b> 3 of the substrate 9. Therefore, the chemical liquids L1 and L2 supplied to the peripheral area K3 of the substrate 9 can be increased compared to the chemical liquid L1 supplied to the central portion of the substrate 9. Therefore, the uniformity of the temperature distribution on the surface of the substrate 9 can be improved.
  • the flow rate of the chemical liquid L2 discharged from the nozzle 52 is larger than the flow rate of the chemical liquid L1 discharged from the nozzle 51. More chemical liquid L2 can be supplied from 52.
  • the discharge direction v1 when the nozzle 52 discharges the chemical liquid L2 is centered on the rotation axis a1 when viewed from above the nozzle 52 in the direction of the rotation axis a1 of the substrate 9.
  • a component v2 going downstream in the rotational direction of the substrate 9 along the tangential direction at the liquid landing position P2 of the circle passing through the liquid landing position P2 and the liquid landing position P2 along the radial direction of the substrate 9 orthogonal to the tangent line. Is a direction having a component v3 toward the opposite side of the rotation axis a1. Accordingly, the chemical liquid L2 can be efficiently supplied from the nozzle 52 to the peripheral area K3 of the substrate 9.
  • medical solutions L1 and L2 are on the opposite side to the rotating shaft a1 with respect to the nozzles 51 and 52.
  • the nozzles 51 and 52 can discharge the chemical liquids L1 and L2 more accurately toward the liquid landing positions P1 and P2.
  • the substrate processing method immediately after at least a part of the chemical liquid L1 hits the liquid landing position P1, the downstream side in the rotation direction of the substrate 9 acting on the chemical liquid L1. Overcoming both the direction force and the centrifugal force, the liquid flows from the liquid landing position P1 to the upstream side in the rotation direction of the substrate 9 and to the rotation axis a1 side while spreading in the form of a liquid film. It passes through the area and reaches the periphery of the substrate 9. Thereby, a large amount of chemical liquid L1 is supplied to the liquid landing position P1, and a smaller amount of chemical liquid L1 is supplied to each position of the central portion of the substrate 9 than the liquid landing position P1.
  • the film thickness tends to be thinner than the central area of the substrate 9, while the liquid landing position P1 is present in the central area of the substrate 9.
  • a smaller amount of the chemical liquid L1 is supplied, but the film thickness is less likely to be thinner than the liquid landing position P1.
  • the uniformity of the film thickness of the chemical liquid in the portion of the surface of the substrate 9 closer to the center c1 of the substrate 9 than the liquid deposition position P1 can be improved by discharging the chemical liquid L1 to the liquid deposition position P1.

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