201143914 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於在基板上塗佈塗佈液之塗佈方法以 及塗佈裝置。 【先前技術】 在半導體裝置或是LCD基板的製造製程中，光阻液等 之塗佈液，一般係藉由旋轉塗佈法來塗佈在半導體晶圓（ 以下，稱爲「晶圓」）上。此手法，係使被保持在旋轉吸 盤上之晶圓旋轉，同時對於其之中心從噴嘴供給塗佈液， 而將此塗佈液藉由離心力來使其朝向外方向延伸，並使塗 佈液伸展至晶圓表面全體。 然而，在此手法中，於晶圓之旋轉時，朝向晶圓之外 方向而飛散之塗佈液的量係爲多，而有著塗佈液之使用效 率爲差的問題。又，由於塗佈液係朝向晶圓之外方向而飛 散，因此，係有必要以將晶圓之側方全體作覆蓋的方式來 設置杯體，而由於伴隨著晶圓之大型化，杯體亦會變大， 因此，亦有著會使進行塗佈液之塗佈的塗佈模組變得大型 化的問題。 作爲此種課題之解決手法，在專利文獻1中，係提案 有一種利用毛細管現象來在角型基板上塗佈塗佈液的手法 。此手法，係在塗佈液槽處設置朝向斜上方側而延伸之毛 管狀的塗佈液流出路徑，並使塗佈液槽內之塗佈液經由毛 細管作用來在塗佈液流出路徑中上升並從其之前端流出， -5- 201143914 以塗佈在基板上。 另外，在此利用有毛細管現象之塗佈手法中，係經由 塗佈液槽內之液面高度和塗佈液流出路徑之前端之高度間 的差異，來對於從塗佈液流出路徑所流出之塗佈液的量作 調整。因此，爲了對於基板而以均一之膜厚來塗佈塗佈液 ，係有必要將塗佈液槽內之液面高度和塗佈液流出路徑之 前端的高度保持爲一定。然而，藉由毛細管現象而從塗佈 液流出路徑所流出的塗佈液之量，係極爲少量，在現實情 況中，要在塗佈一枚之基板的期間中而恆常將塗佈液槽內 之液面高度調整爲一定一事，係爲困難。 另一方面，在線寬幅爲更細且具備有高密度圖案之光 阻遮罩的製造中，由於係被要求將光阻液均一地作塗佈， 因此’當將此利用有毛細管現象之塗佈方法適用在光阻液 之塗佈中的情況時，在光阻膜之膜厚均一性上，係仍殘留 有問題。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開平8-24740號公報 【發明內容】 〔發明所欲解決之課題〕 本發明’係有鑑於此種事態而進行者，其目的，係在 於提供一種謀求塗佈液之省量化以及裝置之小型化，並且 -6- 201143914 能夠針對在基板上的塗佈膜之膜厚而得到高均一性的技術 〔用以解決課題之手段〕 因此，本發明，係爲一種塗佈方法，係爲對於基板供 給塗佈液並形成塗佈膜之方法，其特徵爲，包含有··將基 板略水平地保持在基板保持部之工程；和接下來，一面將 塗佈噴嘴之吐出口在相對於前述基板而接近了的狀態下來 相對性地移動，一面從前述吐出口來藉由毛細管現象而將 塗佈液拉出並塗佈在基板上之工程；和接著，以不會使基 板上之塗佈液從基板而飛散的旋轉數來使該基板旋轉之工 程。 例如’前述吐出口，係被形成爲與基板之被塗佈面的 寬幅相同或者是其以上之長度，前述在基板上塗佈塗佈液 之工程’係一面使前述塗佈噴嘴對於基板而在與前述吐出 口相交叉之方向上相對性移動，一面進行。又，例如，前 述使基板旋轉之工程，係藉由使前述基板保持部在鉛直軸 周圍旋轉’而進行之。進而，亦可設爲：在將前述塗佈液 塗佈於前述基板上之前，係進行將基板之被塗佈面上的週 緣區域撥塗佈液化之工程。 又’本發明之塗佈裝置，係爲對於基板供給塗佈液並 形成塗佈膜之塗佈裝置，其特徵爲，具備有：基板保持部 ’係將基板略水平地作保持，並使該基板在鉛直軸周圍旋 轉；·和塗佈噴嘴’係具備有吐出口，並且將包含此吐出口 201143914 之塗佈液的流路構成爲毛細管狀；和移動機構，係使此塗 佈液噴嘴之吐出口在對於被保持在基板保持部處之基板而 作了接近的狀態下來相對性地移動；和塗佈液槽，係將其 之上面作大氣開放，並且藉由塗佈液供給路徑而與前述塗 佈噴嘴作連接，而將其之內部的塗佈液之液面的高度設爲 較塗佈噴嘴之吐出口的高度更低；和控制部，係以一面藉 由移動機構來使前述塗佈噴嘴移動，一面從前述吐出口來 藉由毛細管現象而將塗佈液拉出並塗佈在基板上，接下來 ，藉由基板保持部而以基板上之塗佈液不會從基板而飛散 的旋轉數來使該基板旋轉的方式，來對於此些之移動機構 和基板保持部作控制。 例如，亦可設爲：前述吐出口，係被形成爲與基板之 被塗佈面的寬幅相同或者是其以上之長度，前述移動機構 ，係使前述塗佈噴嘴和被保持在基板保持部處之基板，在 與該吐出口相交叉之方向上而作相對性移動。又，亦可設 爲：glj述基板保持部，係爲兼作爲移動機構者，使被形成 爲與基板之被塗佈面的寬幅相同或者是其以上之長度的前 述吐出口 ’和被保持在基板保持部處之基板相對向，並藉 由使基板旋轉，而將塗佈液塗佈在基板上。進而，亦可設 爲：係具備有將基板之被塗佈面的週緣區域撥塗佈液化之 撥塗佈液化機構。 〔發明之效果〕 若依據本發明，則係在使塗佈噴嘴之吐出口對於基板 -8- 201143914 而接近了的狀態下，使此些之塗佈噴嘴和基板相對性地作 移動，並從前述吐出口而藉由毛細管現象來將塗佈液拉出 並塗佈在基板上。因此，係不會有塗佈液飛散並成爲浪費 的情況，而能夠謀求塗佈液之省量化，又，亦可謀求裝置 之小型化。進而，由於係使塗佈了塗佈液之基板以不會使 基板上之塗佈液飛散的旋轉數來作旋轉，因此，係能夠將 塗佈膜之膜厚的均一性提高。 【實施方式】 參考圖面，對於本發明之塗佈裝置1的第1實施形態作 說明。如圖1〜圖3中所示一般，塗佈裝置1，係在處理容 器1 〇之內部，具備有構成爲將基板（例如晶圓W)從背面 側來水平地作保持並且可自由地在鉛直軸周圍旋轉的旋轉 吸盤2。此旋轉吸盤2 ’係爲成爲將晶圓W作吸引保持之基 板保持部者，並具備有：將晶圓W水平地作保持之略圓板 狀的台21、和被連接於此台21之下面中央部的旋轉軸22。 前述台2 1，係構成爲例如藉由真空吸附或者是靜電吸附來 將晶圓W作吸附保持。在前述旋轉軸2 2之下部側，係被連 接有將該旋轉軸22可自由在鉛直軸周圍旋轉並且可自由升 降地作支持的驅動機構2 3 °圖3中，1 〇 a係爲晶圓W之搬送 □。 在前述旋轉吸盤2之上方側’係以與被保持在該旋轉 吸盤2上之晶圓W相對向的方式’而被設置有兼作爲撥塗 佈液化機構之氣體供給機構3 °撥塗佈液化機構，係爲進 -9 - 201143914 行相對於晶圆W表面之塗佈液的接觸角之控制者，例如， 氣體供給機構3，係如圖2以及圖4中所示一般，被形成爲 將晶圓W作覆蓋之大小的平面圓形狀，其之內部，係被分 割爲第1氣體供給室3 1和第2氣體供給室3 2。以下，由於係 以作爲塗佈液而使用光阻液的情況爲例，因此，關於撥塗 佈液化，係作爲撥光阻劑化來作說明。 則述第1氣體供給室3 1，係爲用以對於晶圓W之週緣 區域1 1供給撥塗佈液化氣體（撥光阻劑化氣體）之氣體供 給室，第2氣體供給室3 2，係爲用以對於晶圓W之中央區 域1 2供給親塗佈液化氣體（親光阻劑化氣體）之氣體供給 室。在此些之第1以及第2氣體供給室31、32的下面，係被 貫穿設置有多數之氣體供給孔31a、3 2a。又，在第1氣體 供給室3 1處，係透過氣體供給路徑3 3而被連接有撥光阻劑 化氣體供給部3 4，並且，在第2氣體供給室3 2處，係透過 氣體供給路徑3 5而被連接有親光阻劑化氣體供給部3 6。在 此些之氣體供給路徑3 3、3 5處，係分別被中介設置有具備 著閥或者是質量流控制器之流量調整部3 3 a、3 5 a。 在晶圓W處之供給前述撥光阻劑化氣體的週緣區域1 1 ，例如係如圖4中所示一般，當晶圓W爲200mm尺寸的情況 時，爲從外緣起而〇.5mm〜3 0mm左右內側之區域。另一方 面，供給前述親光阻劑化氣體之中央區域1 2，係爲前述週 緣區域1 1之內側的區域。對於晶圓W之週緣區域1 1供給撥 光阻劑化氣體之理由，係在於爲了預先經由撥光阻劑化氣 體之供給來將該週緣區域1 1設爲撥光阻劑性，以成爲難以 -10- 201143914 對於該區域1 1而塗佈光阻液之故。若是如此這般地來抑制 對於晶圓W之週緣區域1 1的光阻液之塗佈，則由於一般而 言晶圓W之搬送臂（參考圖12)係將晶圓W之週緣區域11 作保持，因此係能夠抑制光阻液之對於該搬送臂的附著。 又，在後續之工程中，係能夠將使旋轉吸盤2旋轉時之旋 轉條件設定的容許範圍增廣。此係因爲，係以使光阻劑位 在晶圓W之更內側的情況時，在使晶圓W旋轉時會成爲更 難以飛散至晶圓外部之故。 又，對於晶圓W之中央區域1 2供給親光阻劑化氣體之 理由，係在於爲了預先經由親光阻劑化氣體之供給來將該 中央區域I2設爲親光阻劑性，以成爲容易習慣該光阻液並 成爲易於塗佈光阻液之故。作爲前述撥光阻劑化氣體，係 可使用氟素塗佈劑等，作爲前述親光阻劑化氣體，係可使 用丙二醇甲醚（PGME )等。此種氣體供給機構3，係構成 爲：藉由升降機構37，來透過升降構件38而在使其之下面 近接於旋轉吸盤2上之晶圓W表面的氣體供給位置和遠離 至晶圓W之上方側的待機位置之間自由地作升降。前述氣 體供給位置，係爲使氣體供給機構3之下面從旋轉吸盤2上 之晶圓W表面而離開了 5mm〜10mm左右之位置。 在被保持於前述旋轉吸盤2上之晶圓W的上方側，係 被設置有塗佈噴嘴4。此塗佈噴嘴4，係如圖2以及圖3中所 示一般，爲在圖中之Y方向上而延伸的長條噴嘴，於其之 下面，係被形成有沿著長邊方向而延伸之細縫狀的吐出口 4 1。此吐出口 4 1，係被形成爲與晶圓W之被塗佈面的寬幅 -11 - 201143914 相同或者是其以上之長度》於此，前述被塗佈面之寬幅， 係因應於欲對於晶圓W而塗佈塗佈液之區域來作決定。於 此例中，由於係對於晶圓全面而塗佈塗佈液，因此，前述 被塗佈面之寬幅，係相當於晶圓之直徑，但是，當僅在晶 圓w之中央區域1 2塗佈塗佈液的情況時，係相當於該中央 區域12之直徑。又，當僅在晶圓W之電路形成區域上塗佈 塗佈液的情況時，係相當於該電路形成區域之最大寬幅。 當基板爲角型的情況時，前述被塗佈面之寬幅，係相當於 欲對於基板而塗佈塗佈液之區域的最大寬幅。又，塗佈噴 嘴4之吐出口 41，於此例中，係爲細縫狀’但是，亦可爲 將多數之吐出孔相互空出有間隔地而作配列者。 在前述塗佈噴嘴4之內部，係如圖5以及圖6中所示一 般，沿著其之長邊方向而被形成有與前述吐出口 41相通連 之塗佈液流路42。在此塗佈液流路42處’係透過被形成於 塗佈噴嘴4內之流路43，而從後述之塗佈液槽5來供給有塗 佈液。於此例中，係藉由吐出口 4 1、塗佈液流路42以及流 路43，來構成塗佈噴嘴4內之塗佈液的流路。此些之吐出 口 41、塗佈液流路42以及流路43之寬幅L1 ’係被設定爲能 夠得到毛細管現象之大小’例如被設定爲0.1 m m〜0.5 m m 左右之毛細管狀。 此塗佈噴嘴4，係如圖3中所示一般’構成爲藉由移動 機構44來使吐出口 4.1在近接於旋轉吸盤2上之晶圓W表面 的狀態下來作移動。前述移動機構44 ’係構成爲可沿著在 與前述吐出口 41相交叉之方向（圖3中之X方向）上而延伸 -12- 201143914 之導引軌45來自由移動。如此這般，塗佈噴嘴4，係成爲 能夠在與吐出口 41相交叉之方向上，來從旋轉吸盤2之其 中一端側的外側處之待機位置（圖3中所示之位置）起而 一直移動至被保持在旋轉吸盤2上之晶圓W的另外一端側 處。於此，所謂的使吐出口 41與旋轉吸盤2上之晶圓W表 面作了近接的狀態，係指塗佈噴嘴4之下端和前述晶圓W 表面間的距離L 2爲例如0 · 1 m m〜0.4 m m程度的狀態。又， 係構成爲：當塗佈噴嘴4位於待機位置時，係不會對於氣 體供給機構3移動至氣體供給位置處一事造成妨礙，另一 方面’當氣體供給機構3位於待機位置時，係不會對於塗 佈噴嘴4之移動造成妨礙。 前述塗佈液槽5，係爲於其之內部而儲存塗佈液（例 如光阻液）之塗佈液槽，其之上方側，係被作大氣開放。 此塗佈液槽5和塗佈噴嘴4之間，係透過塗佈液供給路徑5 1 而被作連接，此塗佈液供給路徑5 1之另外一端側，係被與 前述塗佈噴嘴4內之流路4 3作連接。又，在塗佈液供給路 徑5 1處’係被設置有達成在塗佈開始時而將塗佈液推出之 功能的幫浦P 1、和開閉閥V 1。 ' 在塗佈液槽5之上方側，係被設置有用以檢測出塗佈 液槽5內之塗佈液的液面高度位置之液面感測器5 2，作爲 此液面感測器5 2，例如係可使用超音波式液面準位感測器 。又’塗佈液槽5，係構成爲能夠藉由升降機構53來自由 升降’作爲此升降機構5 3，例如係可使用具備有滾珠螺桿 之機構。進而’塗佈液槽5，係藉由具備有幫浦P2以及開 -13- 201143914 閉閥V2之供給路徑6 1而被與儲存塗佈液之塗佈液儲槽6作 連接。 在此塗佈裝置1中，係利用通連管之原理來從塗佈液 槽5而將塗佈液供給至塗佈噴嘴4處，而在塗佈噴嘴4和晶 圓W之間，則係利用毛細管現象而將塗佈液吐出。因此， 如同上述一般，塗佈噴嘴4內之塗佈液的流路，係被形成 爲能夠得到毛細管現象之毛細管狀，並設定爲使塗佈液槽 5內之塗佈液的液面高度位置成爲較塗佈液噴嘴4之吐出口 41前端的高度位置更低。 此時，藉由塗佈液槽5內之塗佈液的液面高度位置和 塗佈噴嘴4之前端的高度位置之間的差分Η (參考圖6)， 從塗佈噴嘴4所吐出之塗佈液的量係被作調整。故而，係 以使從塗佈噴嘴4所吐出之塗佈液的量成爲適當之量的方 式，來對於塗佈噴嘴4內之流路的大小或者是前述差分Η、 塗佈液供給路徑5 1之容積等作決定。於此，前述塗佈液供 給路徑51係被構成爲可撓，在塗佈時，係成爲可並不移動 塗佈液槽5地來僅使塗佈噴嘴4移動。如此這般，而構成爲 就算是塗佈噴嘴4移動並使塗佈液供給路徑5 1之形狀作了 改變的情況時，亦能夠使前述之通連管的原理起作用。 而後，在塗佈時，係藉由液面感測器5 2來檢測出塗佈 液槽5內之塗佈液的液面高度，並根據此檢測値，來藉由 後述之控制部7而以使前述差分Η成爲一定的方式來藉由升 降機構5 3來控制塗佈液槽5之高度。此係因爲，藉由使前 述差分Η成爲一定，從塗佈液噴嘴4所吐出之塗佈液的量係 -14- 201143914 成爲一定之故。 又，在旋轉吸盤2之下部側，係被設置有杯體1 3 °此 杯體1 3，係如圖1〜圖3中所示一般，平面形狀被構成爲四 角形狀，並且，其之長邊方向（圖3中之Y方向）的其中一 ‘邊，係被設定爲較塗佈噴嘴4之吐出口 4 1而更大。但是， 如同後述一般，在該塗佈裝置1中，由於係幾乎不會有從 塗佈噴嘴4來對於杯體1 3吐出塗佈液的情況，因此，係並 非一定需要設置杯體13。 前述控制部7，係爲對於在塗佈裝置1中之各機器的動 作進行統籌控制者，例如係由電腦所成，並具備有未圖示 之程式儲存部。在此程式儲存部中，係被儲存有以進行在 後述之作用中所說明的塗佈液之塗佈處理的方式而組入有 指令之程式，藉由將此程式讀出至控制部中，控制部7， 係對於由氣體供給機構3所進行之撥光阻劑化氣體或親光 阻劑化氣體之供給、塗佈噴嘴4之移動、從塗佈噴嘴4所對 於晶圓W之塗佈液的供給、由旋轉吸盤2所進行之晶圓的 旋轉、塗佈液槽5之液面的調整、從塗佈液儲槽6所對於塗 佈液槽5之塗佈液的供給等作控制。前述程式，例如係以 被儲存在硬碟、CD、光磁碟或者是記憶卡等之記憶媒體中 的狀態下，而被收容於程式儲存部中。 前述塗佈液槽5之液面的調整，例如係如同下述一般 而進行。控制部7 ’係將對於旋轉吸盤2上之晶圓W而開始 塗佈液之吐出的開始指令，輸出至塗佈噴嘴4之移動機構 44以及液面感測器5 2處，根據此指令，塗佈噴嘴4係移動 -15- 201143914 至塗佈開始位置處。此塗佈開始位置，係爲在晶圓W之其 中一端側之端部而將塗佈液吐出之位置。 另一方面，基於此開始指令，在液面感測器52處，係 檢測出塗佈液槽5內之塗佈液的液面高度位置，在控制部7 處，係將此作爲基準高度位置而取得之。之後，在此以後 之特定時間（例如每0.1秒）而藉由液面感測器52來檢測 出液面高度位置，並輸出至控制部7處。而後，在控制部7 處，例如係對於檢測出之高度位置和基準高度位置作比較 ，並對於升降機構53而輸出使塗佈液槽5作升降的指令， 直到前述塗佈液槽5內之塗佈液的液面成爲與基準高度位 置一致爲止。例如，當所檢測出之高度位置爲較基準高度 位置而更低1mm的情況時，係以藉由升降機構53來使塗佈 液槽5成爲較開始指令時之高度而更高1 mm的方式來作控 制。在前述升降機構5 3處，由於例如係預先對於藉由滾珠 螺桿機構之旋轉數來使塗佈液槽5升高1mm時的旋轉數作 了掌握，因此，係藉由根據從控制部7而來之指令來作特 定數量之旋轉，而進行塗佈液槽5之高度的控制》 接著，參考圖7〜圖8，針對上述之塗佈裝置的作用作 說明。首先，藉由未圖示之搬送臂而將晶圓W搬送至處理 容器1 〇內，並將晶圓W遞交至旋轉吸盤2上。此晶圓W，例 如係爲在其他之單元處而被供給六甲基二矽氮烷（HMDS )氣體並進行了將晶圓W表面設爲撥水性的HMD S處理者 。藉由進行此HMD S處理，係能夠抑制顯像時之光阻圖案 的剝離。 -16- 201143914 又，晶圓W之遞交，在將晶圓W之周緣側作保持之搬 送臂的情況時，係將旋轉吸盤2之台21設爲不會對於搬送 臂之進退動作造成阻礙的大小，並藉由使旋轉吸盤2和搬 送臂作相對性之升降來進行之。又，亦可設爲在旋轉吸盤 2上設置未圖示之晶圓W的推上銷，並藉由使此推上銷和 搬送臂作相對性之升降，來進行晶圓W之遞交。 接著’如圖7 (a)中所示一般，使氣體供給機構3下 降至氣體供給位置，而對於晶圓W之週緣區域1 1供給撥光 阻劑化氣體，並且對於晶圓W之中央區域1 2供給親光阻劑 化氣體。此時，塗佈噴嘴4係被放置於待機位置處。藉由 如此這般地對於晶圓W而供給特定流量之撥光阻劑化氣體 以及親光阻劑化氣體，而將前述週緣區域1 1撥光阻劑化， 並且將前述中央區域1 2親光阻劑化，之後，使氣體供給機 構3上升至待機位置處。於此，撥光阻劑化氣體以及親光 阻劑化氣體之供給，係可同時進行，亦可在將其中一方作 了供給後再將另外一方作供給。又，就算是同時進行撥光 阻劑化氣體以及親光阻劑化氣體之供給，亦並非一定需要 將供給開始以及供給停止之時序設爲同時，就算是使供給 開始或供給停止之時序有所偏差亦無妨。 接著，在氣體供給機構3回到了待機位置後，從控制 部7而將塗佈液之塗佈開始指令輸出至移動機構44以及液 面感測器52處。藉由此，塗佈噴嘴4係一直移動至圖7(b )中所示的塗佈開始位置處，液面感測器52係檢測出塗佈 液槽5內之液面高度位置，並輸出至控制部7處。如此這般 -17- 201143914 ，在控制部7處，係在將此液面高度位置作爲基準高度位 置而取得之後，對於閥V 1以及幫浦P 1輸出開始指令。藉由 此，閥V 1係開啓，並藉由幫浦P 1而將特定量之塗佈液R從 塗佈液槽5來送出至塗佈噴嘴4處。 於此，如同上述一般，在塗佈噴嘴4和晶圓W之間， 係藉由毛細管現象而被塗佈有塗佈液，但是，此毛細管現 象，係當塗佈噴嘴4之吐出口 4 1和晶圓W之間藉由塗佈液 而作了接觸的情況時才會發生。故而，在塗佈之開始時， 係藉由幫浦P ]而送液塗佈液R，並預先確實地使塗佈液R存 在於吐出口 4 1和晶圆W之間，藉由此，就算是在之後停止 幫浦P 1，亦成爲藉由毛細管現象而將塗佈液從吐出口 4 1拉 出。此時，藉由辩浦P 1而將塗佈液R推出之量，係爲使從 吐出口 4 1而吐出之塗佈液R與晶圓W作接液的程度，塗佈 噴嘴4之下面和晶圓W表面間的距離L2，由於係爲0.1 mm〜 0.4mm程度，故而係爲極少量。又，由於塗佈噴嘴4之吐出 口 4 1係設爲將晶圆W之直徑作涵蓋的大小，因此，在塗佈 開始時’在吐出口 4 1處係會出現並不存在有塗佈對象之晶 圓W的區域。然而，如同前述二般，由於藉由幫浦p丨所從 吐出口 41推出之塗佈液的量係爲極少量，因此，在並不存 在有塗佈對象之晶圓W的吐出口 4 1處，塗佈液R雖然會膨 出，但是僅有在與晶圓W作了接液的吐出口 4 1側，塗佈液 R會成爲被拉張的狀態。故而，其結果，就算是在並不存 在有塗佈對象之晶圓W的吐出口 41處，亦不會有塗佈液落 下至杯體13處之虞。 -18· 201143914 接著’如圖7(c)中所示一般，藉由移動機構44來使 塗佈噴嘴4從被保持在旋轉吸盤2上之晶圓W的其中一端側 起來移動至另外一端側處，並對於晶圓W塗佈塗佈液R， 以形成塗佈膜。此時，如同上述一般，由於塗佈噴嘴4內 之塗佈液的流路（流路4 3、塗佈液流路4 2、吐出口 4 1 )係 形成爲毛細管狀，因此，在塗佈噴嘴4和晶圓W之間，係 藉由毛細管現象而被塗佈有塗佈液R。亦即是，塗佈噴嘴4 之吐出口 4 1和晶圓W，係透過塗佈液R而作接觸，伴隨著 塗佈噴嘴4之移動，塗佈液R係藉由晶圓w而被從吐出口 4 1 來經由毛細管現象而拉出，並被作塗佈。而，在塗佈液槽 5處，由於上面係被作大氣開放，且在塗佈液槽5和塗佈噴 嘴4之間係作用有通連管之原理，因此，對於從前述吐出 口 4 1所拉出之量作補償的量之塗佈液，係從塗佈液槽5而 被供給至塗佈噴嘴4處。 此時，在液面感測器5 2處，係以特定之時序而檢測出 塗佈液槽5內之塗佈液的液面高度，並將此檢測値輸出至 控制部7處。而後’控制部7係對於此檢測値和前述基準高 度位置作比較，並以使塗佈液槽5內之塗佈液的液面和基 準高度位置相一致的方式來控制升降機構5 3。如此這般， 藉由使塗佈液槽5內之液面的高度相一致，係能夠使從塗 佈噴嘴4之吐出口 4 1而來的塗佈液之吐出量成爲—致，如 此這般，在如圖8 ( a )中所示一般地而使塗佈噴嘴4 一直 移動至晶圓W之另外一端側並進行了對於晶圓w之塗佈液R 的塗佈後，從控制部7而對於移動機構44、閥V 1以及液面 -19- 201143914 感測器52輸出塗佈結束指令。藉由此，而將閥V 1關閉，並 結束由液面感測器52所進行之液面的檢測，而藉由移動機 構44來將塗佈噴嘴4移動至待機位置處。於此，在結束時 ，於塗佈噴嘴4之吐出口 41處亦係有著並不存在塗佈對象 之晶圓W的區域，但是，在並不存在有相對應之晶圓W的 吐出口 4 1處，係並不會發生毛細管現象，而不會有經由晶 圓W來將塗佈液拉出的情況。故而，從並不存在有塗佈對 象之晶圓W的吐出口 4 1而垂下有塗佈液的情況，係幾乎不 會發生。如此這般，而在晶圓W上，以例如1 0 # m程度之 膜厚來形成身爲塗佈液R之光阻液的塗佈膜。 之後，如圖8 ( b )中所示一般，將被塗佈了塗佈液R 之晶圓W，以不會使塗佈液R從晶圓W而飛散的旋轉數來作 旋轉。於此，由於係從塗佈噴嘴4來利用毛細管現象而將 塗佈液作塗佈，因此，晶圓W上之塗佈膜的膜厚，係爲1 〇 // m左右而爲極薄。因此，就算是晶圓W旋轉，塗佈液R亦 爲難以飛散之狀態，所謂不會使塗佈液R飛散之旋轉數， 例如係爲lOOrpm〜500rpm程度之旋轉數。如此這般，藉由 使被塗佈了塗佈液R之晶圓W旋轉，由於晶圓W上之塗佈液 R係經由離心力而作移動，因此，係能夠將在晶圓W表面 上之塗佈膜的膜厚之均一性提升。藉由此一連串之工程， 在晶圓W表面上係被塗佈塗佈液並形成塗佈膜，但是，在 對於特定枚數之晶圓W而進行了塗佈液之塗佈後，係從塗 佈液儲槽6來將特定量之塗佈液供給至塗佈液槽5內。 於此，如同上述一般，晶圓W上之塗佈膜的厚度係爲 -20- 201143914 極薄’又’係以使塗佈液槽5內之塗佈液的液面高度成爲 一定的方式而進行調整，因此，係能夠一面確保某種程度 之均一性’ 一面將塗佈液R塗佈於晶圓表面上。然而，近 年來’由於光阻圖案係成爲更加精密，因此，係要求能夠 將塗佈膜之膜厚的均一性更加提高。此時，若是精密地進 行塗佈液槽5內的塗佈液之液面調整，則理論上，塗佈膜 之膜厚均一性係提升，但是，實際上，由於塗佈液之塗佈 量係爲極少，因此，液面之變化量亦爲微小，要將前述液 面之高度位置恆常維持於一定一事，係爲困難。相對於此 ，藉由一面預先確保有某種程度之均一性一面對於晶圓W 表面塗佈塗佈液R，再進而使晶圓w旋轉，係能夠將塗佈 膜之膜厚均一性更加提升，此事，由於係可藉由簡單的手 法來確實地將膜厚均一性提升，故爲有效。 此時，藉由使晶圓w旋轉，晶圓W上之塗佈液R係藉由 離心力而欲朝向外側作移動，但是，藉由晶圓外周之表面 張力，光阻液係成爲難以從晶圓外周而溢出。又，由於晶 圓W之週緣區域1 1係被作撥光阻劑化，因此，在旋轉前之 晶圓W上的光阻劑，係存在於較最外周而更靠中心側，就 算是在後續之工程中而使旋轉吸盤2作高速旋轉並進行乾 燥的情況時，亦能夠將旋轉條件設定之容許範圍擴廣。201143914 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a coating method and a coating apparatus for applying a coating liquid on a substrate. [Prior Art] In a semiconductor device or an LCD substrate manufacturing process, a coating liquid such as a photoresist is generally applied to a semiconductor wafer by a spin coating method (hereinafter referred to as a "wafer"). on. In this method, the wafer held on the spin chuck is rotated, and the coating liquid is supplied from the nozzle to the center thereof, and the coating liquid is extended outward by centrifugal force, and the coating liquid is applied. Extend to the entire surface of the wafer. However, in this method, when the wafer is rotated, the amount of the coating liquid scattered toward the outside of the wafer is large, and there is a problem that the use efficiency of the coating liquid is poor. Further, since the coating liquid is scattered toward the outside of the wafer, it is necessary to provide the cup body so as to cover the entire side of the wafer, and the cup body is enlarged due to the enlargement of the wafer. As a result, the size of the coating module for coating the coating liquid is also increased. As a solution to such a problem, Patent Document 1 proposes a method of applying a coating liquid onto a corner substrate by capillary action. In this method, the coating liquid outflow path of the capillary tube extending toward the obliquely upper side is provided in the coating liquid tank, and the coating liquid in the coating liquid tank rises in the coating liquid outflow path via capillary action. And it flows out from its front end, -5-201143914 to coat on the substrate. Further, in the coating method using the capillary phenomenon, the flow from the coating liquid outflow path is caused by the difference between the liquid level in the coating liquid tank and the height of the front end of the coating liquid outflow path. The amount of the coating liquid was adjusted. Therefore, in order to apply the coating liquid to the substrate with a uniform film thickness, it is necessary to keep the liquid level in the coating liquid tank and the height of the tip end of the coating liquid outflow path constant. However, the amount of the coating liquid flowing out from the coating liquid outflow path by the capillary phenomenon is extremely small, and in reality, the coating liquid tank is constantly applied during the application of one substrate. It is difficult to adjust the liquid level in the liquid to a certain degree. On the other hand, in the manufacture of a photoresist mask having a wider line width and having a high-density pattern, since it is required to uniformly apply the photoresist liquid, "when this is coated with a capillary phenomenon, When the cloth method is applied to the application of the photoresist liquid, there is still a problem in the uniformity of the film thickness of the photoresist film. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 8-24740 (Summary of the Invention) The present invention has been made in view of such a situation. It is a technique for obtaining a high uniformity of the thickness of a coating film on a substrate, and a method for solving the problem, in order to reduce the size of the coating liquid and to miniaturize the device, and thus -6-201143914 The present invention relates to a coating method for supplying a coating liquid to a substrate and forming a coating film, comprising: a project for holding the substrate slightly horizontally in the substrate holding portion; When the discharge port of the coating nozzle is relatively moved in a state close to the substrate, the coating liquid is pulled out from the discharge port by capillary action and applied to the substrate. Engineering; and then, the process of rotating the substrate without rotating the coating liquid on the substrate from the substrate. For example, the above-mentioned discharge port is formed to have the same width as the width of the coated surface of the substrate or the length thereof, and the coating on the substrate is applied to the substrate. It is carried out while moving relatively in the direction intersecting the discharge port. Further, for example, the above-described process of rotating the substrate is performed by rotating the substrate holding portion around the vertical axis. Further, before the application liquid is applied onto the substrate, a process of applying and liquefying the peripheral region of the coated surface of the substrate may be performed. Further, the coating device of the present invention is a coating device that supplies a coating liquid to a substrate to form a coating film, and is characterized in that the substrate holding portion is configured to hold the substrate horizontally and to hold the substrate The substrate is rotated around the vertical axis; the coating nozzle is provided with a discharge port, and the flow path of the coating liquid including the discharge port 201143914 is formed in a capillary shape; and the moving mechanism is such that the coating liquid nozzle is The discharge port is relatively moved in a state in which the substrate held by the substrate holding portion is brought close to each other; and the coating liquid tank is opened to the atmosphere and is supplied by the coating liquid supply path. The coating nozzle is connected, and the height of the liquid surface of the coating liquid inside is set to be lower than the height of the discharge port of the coating nozzle; and the control unit is configured to move the surface by a moving mechanism When the cloth nozzle moves, the coating liquid is pulled out from the discharge port by capillary action and applied to the substrate, and then the coating liquid on the substrate is not scattered from the substrate by the substrate holding portion. Spin The number of revolutions is used to rotate the substrate to control the moving mechanism and the substrate holding portion. For example, the discharge port may be formed to have the same width as or greater than the width of the coated surface of the substrate, and the moving mechanism may hold the coating nozzle and the substrate holding portion. The substrate at the position moves relative to each other in a direction intersecting the discharge port. In addition, the substrate holding portion may be a moving mechanism, and the discharge port is formed to be the same as or wider than the width of the coated surface of the substrate. The substrate at the substrate holding portion faces each other, and the coating liquid is applied onto the substrate by rotating the substrate. Further, the coating liquefaction mechanism for liquefying and coating the peripheral region of the coated surface of the substrate may be provided. [Effect of the Invention] According to the present invention, when the discharge port of the coating nozzle is brought close to the substrate -8 to 201143914, the coating nozzle and the substrate are relatively moved and moved from The discharge port is pulled out by the capillary phenomenon and applied to the substrate. Therefore, the coating liquid does not scatter and is wasted, and the coating liquid can be quantified, and the size of the apparatus can be reduced. Further, since the substrate coated with the coating liquid is rotated by the number of rotations without scattering the coating liquid on the substrate, the uniformity of the film thickness of the coating film can be improved. [Embodiment] A first embodiment of a coating apparatus 1 of the present invention will be described with reference to the drawings. As shown in FIG. 1 to FIG. 3, the coating apparatus 1 is disposed inside the processing container 1 and is configured to horizontally hold the substrate (for example, the wafer W) from the back side and is freely A rotating suction cup 2 that rotates around a vertical shaft. The spin chuck 2' is a substrate holding portion that holds and holds the wafer W, and includes a table 21 having a substantially disk shape in which the wafer W is horizontally held, and a table 21 connected to the table 21 The lower part of the rotating shaft 22 in the lower part. The stage 2 1 is configured to adsorb and hold the wafer W by vacuum adsorption or electrostatic adsorption, for example. On the lower side of the rotating shaft 2 2 , a driving mechanism that can rotate the rotating shaft 22 freely around the vertical axis and can be freely raised and lowered is connected. 3 . In FIG. 3 , 1 〇 a is a wafer. Transfer of W. A gas supply mechanism that also serves as a dial coating liquefaction mechanism is disposed on the upper side of the spin chuck 2 so as to be opposed to the wafer W held on the spin chuck 2 The mechanism is a controller of the contact angle of the coating liquid with respect to the surface of the wafer W, for example, the gas supply mechanism 3, as shown in FIG. 2 and FIG. The wafer W has a planar circular shape of a size that covers the inside, and is divided into a first gas supply chamber 31 and a second gas supply chamber 3 2 . In the following, the case where the photoresist is used as the coating liquid is taken as an example. Therefore, the liquefaction of the dial coating is described as a photoresist. The first gas supply chamber 31 is a gas supply chamber for supplying a liquefied gas (photo-resisting gas) to the peripheral region 1 1 of the wafer W, and the second gas supply chamber 3 2 is provided. It is a gas supply chamber for supplying a pro-coating liquefied gas (a photo-resisting gas) to the central region 12 of the wafer W. In the lower surfaces of the first and second gas supply chambers 31 and 32, a plurality of gas supply holes 31a and 31a are provided. Further, in the first gas supply chamber 31, the photoresist gas supply unit 34 is connected to the gas supply path 3, and the gas supply is supplied to the second gas supply chamber 32. The path 3 5 is connected to the photo-resisting gas supply unit 36. At the gas supply paths 3 3 and 35 of these, the flow rate adjusting units 3 3 a and 3 5 a provided with a valve or a mass flow controller are interposed. The peripheral region 1 1 of the photo-resisting gas is supplied to the wafer W, for example, as shown in FIG. 4, and when the wafer W is 200 mm in size, it is 〇5 mm from the outer edge. The area of the inner side of about 30 mm. On the other hand, the central region 1 2 to which the above-mentioned photo-resisting gas is supplied is a region inside the peripheral region 1 1 . The reason why the photoresist-removing gas is supplied to the peripheral region 1 1 of the wafer W is that it is difficult to set the peripheral region 1 1 as a photoresist by the supply of the photoresist-removing gas in advance. -10- 201143914 The photoresist is applied to this area 1 1 . If the coating of the photoresist liquid to the peripheral region 11 of the wafer W is suppressed in this way, since the transfer arm of the wafer W (refer to FIG. 12) is generally used, the peripheral region 11 of the wafer W is used. By holding, it is possible to suppress adhesion of the photoresist to the transfer arm. Further, in the subsequent work, the allowable range for setting the rotation condition when the spin chuck 2 is rotated can be widened. This is because when the photoresist is placed on the inner side of the wafer W, it is more difficult to fly to the outside of the wafer when the wafer W is rotated. Further, the reason why the photo-resisting gas is supplied to the central region 12 of the wafer W is to provide the central region I2 as a photo-resistance in advance by the supply of the photo-resistance gas. It is easy to get used to the photoresist and it is easy to apply the photoresist. As the photo-resisting gas, a fluorine coating agent or the like can be used, and as the photo-resisting gas, propylene glycol methyl ether (PGME) or the like can be used. The gas supply mechanism 3 is configured such that the elevating mechanism 37 passes through the elevating member 38 to bring the gas supply position on the surface of the wafer W close to the spin chuck 2 to the wafer W. The standby position on the upper side is freely raised and lowered. The gas supply position is such that the lower surface of the gas supply mechanism 3 is separated from the surface of the wafer W on the spin chuck 2 by a distance of about 5 mm to 10 mm. The coating nozzle 4 is provided on the upper side of the wafer W held on the spin chuck 2. The coating nozzle 4, as shown in FIG. 2 and FIG. 3, is a long nozzle extending in the Y direction in the drawing, and is formed below the long side direction. Slotted spout 4 1 . The discharge port 4 1 is formed to be the same as or longer than the width -11 - 201143914 of the coated surface of the wafer W. Here, the width of the coated surface is determined by The area of the coating liquid is applied to the wafer W to determine. In this example, since the coating liquid is applied to the entire wafer, the width of the coated surface corresponds to the diameter of the wafer, but only in the central region of the wafer w 2 When the coating liquid is applied, it corresponds to the diameter of the central region 12. Further, when the coating liquid is applied only to the circuit formation region of the wafer W, it corresponds to the maximum width of the circuit formation region. When the substrate is of an angular shape, the width of the coated surface corresponds to the maximum width of the region where the coating liquid is to be applied to the substrate. Further, the discharge port 41 of the application nozzle 4 is in the form of a slit shape in this example. However, a plurality of discharge holes may be arranged to be spaced apart from each other. In the inside of the coating nozzle 4, as shown in Figs. 5 and 6, a coating liquid flow path 42 that is in communication with the discharge port 41 is formed along the longitudinal direction thereof. The coating liquid flow path 42 is transmitted through the flow path 43 formed in the coating nozzle 4, and the coating liquid is supplied from the coating liquid tank 5 to be described later. In this example, the flow path of the coating liquid in the coating nozzle 4 is constituted by the discharge port 4 1 , the coating liquid flow path 42 , and the flow path 43 . The discharge port 41, the coating liquid flow path 42, and the wide width L1' of the flow path 43 are set to have a capillary shape of, for example, a capillary shape of about 0.1 m to 0.5 m. The coating nozzle 4 is generally configured to move the discharge port 4.1 in a state of being close to the surface of the wafer W on the spin chuck 2 by the moving mechanism 44. The moving mechanism 44' is configured to be movable along the guide rail 45 extending in the direction (X direction in Fig. 3) that intersects the discharge port 41 and extends -12-201143914. In this manner, the application nozzle 4 is always in a direction intersecting the discharge port 41 from the standby position (the position shown in FIG. 3) at the outer side of one end side of the rotary chuck 2 It is moved to the other end side of the wafer W held on the spin chuck 2. Here, the state in which the discharge port 41 is in close contact with the surface of the wafer W on the spin chuck 2 means that the distance L 2 between the lower end of the coating nozzle 4 and the surface of the wafer W is, for example, 0 · 1 mm. A state of ~0.4 mm. Further, when the coating nozzle 4 is at the standby position, it does not interfere with the movement of the gas supply mechanism 3 to the gas supply position, and on the other hand, when the gas supply mechanism 3 is at the standby position, This may hinder the movement of the coating nozzle 4. The coating liquid tank 5 is a coating liquid tank in which a coating liquid (e.g., a photoresist liquid) is stored inside, and the upper side thereof is opened to the atmosphere. The coating liquid tank 5 and the coating nozzle 4 are connected to each other through the coating liquid supply path 5 1 , and the other end side of the coating liquid supply path 5 1 is fitted into the coating nozzle 4 The flow path 4 3 is connected. Further, the coating liquid supply path 5 1 is provided with a pump P 1 for achieving a function of pushing out the coating liquid at the start of coating, and an opening and closing valve V 1 . On the upper side of the coating liquid tank 5, a liquid level sensor 52 for detecting the liquid level height position of the coating liquid in the coating liquid tank 5 is provided as the liquid level sensor 5 2. For example, an ultrasonic level level sensor can be used. Further, the coating liquid tank 5 is configured to be lifted and lowered by the elevating mechanism 53 as the elevating mechanism 53. For example, a mechanism including a ball screw can be used. Further, the coating liquid tank 5 is connected to the coating liquid storage tank 6 for storing the coating liquid by a supply path 61 having a pump P2 and a valve closing valve V2 of -13-201143914. In the coating apparatus 1, the coating liquid is supplied from the coating liquid tank 5 to the coating nozzle 4 by the principle of a communication tube, and between the coating nozzle 4 and the wafer W, The coating liquid is discharged by capillary action. Therefore, as described above, the flow path of the coating liquid in the coating nozzle 4 is formed into a capillary shape capable of obtaining a capillary phenomenon, and is set so that the liquid level height of the coating liquid in the coating liquid tank 5 is set. The height position of the tip end of the discharge port 41 of the coating liquid nozzle 4 is lower. At this time, the coating from the coating nozzle 4 is applied by the difference Η (refer to FIG. 6) between the liquid level height position of the coating liquid in the coating liquid tank 5 and the height position of the front end of the coating nozzle 4. The amount of liquid is adjusted. Therefore, the size of the flow path in the coating nozzle 4 or the difference Η and the coating liquid supply path 5 1 are such that the amount of the coating liquid discharged from the coating nozzle 4 is an appropriate amount. The volume is determined. Here, the coating liquid supply path 51 is configured to be flexible, and it is possible to move only the coating nozzle 4 without applying the coating liquid tank 5 at the time of coating. In this manner, even when the coating nozzle 4 is moved and the shape of the coating liquid supply path 51 is changed, the principle of the above-described communication tube can be made to function. Then, at the time of coating, the liquid level of the coating liquid in the coating liquid tank 5 is detected by the liquid level sensor 52, and based on the detection, the control unit 7 is described later. The height of the coating liquid tank 5 is controlled by the elevating mechanism 53 in such a manner that the difference Η is made constant. In this case, the amount of the coating liquid discharged from the coating liquid nozzle 4 is constant by making the above-described differential enthalpy constant. Further, on the lower side of the spin chuck 2, the cup body 1 3 is provided with the cup body 1 3 as shown in Figs. 1 to 3, and the planar shape is formed into a quadrangular shape, and the length thereof is One of the 'edge' directions (the Y direction in FIG. 3) is set to be larger than the discharge port 4 1 of the coating nozzle 4. However, as described later, in the coating apparatus 1, since the coating liquid is not discharged from the coating nozzle 4 to the cup body 13, the cup body 13 is not necessarily required to be provided. The control unit 7 is a system for controlling the operation of each device in the coating device 1, and is, for example, a computer, and includes a program storage unit (not shown). In the program storage unit, a program in which a command is applied to perform coating processing of the coating liquid described later, and a program is read, and the program is read into the control unit. The control unit 7 supplies the light-removing agent gas or the photoresist-reactive gas to be supplied by the gas supply mechanism 3, the movement of the coating nozzle 4, and the coating of the wafer W from the coating nozzle 4. The supply of the liquid, the rotation of the wafer by the spin chuck 2, the adjustment of the liquid level of the coating liquid tank 5, and the supply of the coating liquid from the coating liquid storage tank 6 to the coating liquid tank 5 are controlled. . The program is stored in the program storage unit, for example, in a state of being stored in a hard disk, a CD, a magneto-optical disk, or a memory card such as a memory card. The adjustment of the liquid level of the coating liquid tank 5 is carried out, for example, as follows. The control unit 7' outputs a start command for starting the discharge of the coating liquid to the wafer W on the spin chuck 2, and outputs it to the moving mechanism 44 of the coating nozzle 4 and the liquid level sensor 52, according to this instruction. The coating nozzle 4 is moved -15-201143914 to the coating start position. This coating start position is a position at which the coating liquid is discharged at the end portion on one end side of the wafer W. On the other hand, based on this start command, the liquid level height position of the coating liquid in the coating liquid tank 5 is detected at the liquid level sensor 52, and this is used as the reference height position at the control unit 7. And get it. Thereafter, the liquid level height position is detected by the liquid level sensor 52 at a specific time thereafter (e.g., every 0.1 second), and is output to the control portion 7. Then, the control unit 7 compares the detected height position with the reference height position, for example, and outputs a command for raising and lowering the coating liquid tank 5 to the lifting mechanism 53 until the coating liquid tank 5 is used. The liquid level of the coating liquid is equal to the reference height position. For example, when the detected height position is 1 mm lower than the reference height position, the coating liquid tank 5 is made higher by 1 mm than the height at the start of the command by the lifting mechanism 53. For control. In the above-described elevating mechanism 53, for example, the number of rotations when the coating liquid tank 5 is raised by 1 mm by the number of rotations of the ball screw mechanism is grasped in advance, and therefore, by the control unit 7, The control of the height of the coating liquid tank 5 is performed by a predetermined number of rotations. Next, the operation of the above coating apparatus will be described with reference to Figs. 7 to 8 . First, the wafer W is transported into the processing container 1 by a transfer arm (not shown), and the wafer W is delivered to the spin chuck 2. This wafer W is, for example, a HMD S processor which is supplied with hexamethyldiazepine (HMDS) gas at another unit and which has a surface water-repellent. By performing this HMD S process, it is possible to suppress peeling of the photoresist pattern at the time of development. -16-201143914 In the case where the wafer W is delivered, when the transfer arm is held on the peripheral side of the wafer W, the stage 21 of the rotary chuck 2 is not hindered by the forward and backward movement of the transfer arm. The size is determined by making the rotary chuck 2 and the transfer arm rise and fall in a relative manner. Further, a push pin of a wafer W (not shown) may be provided on the spin chuck 2, and the wafer W may be delivered by relatively raising and lowering the push pin and the transfer arm. Then, as shown in FIG. 7(a), the gas supply mechanism 3 is lowered to the gas supply position, and the photoresist region is supplied to the peripheral region 1 1 of the wafer W, and the central region of the wafer W is applied. 1 2 supplies a photo-resisting gas. At this time, the coating nozzle 4 is placed at the standby position. By supplying the photoresist and the photo-resisting gas at a specific flow rate to the wafer W in this manner, the peripheral region 1 1 is photo-resisted, and the central region 1 2 is pro- After the photoresist is formed, the gas supply mechanism 3 is raised to the standby position. Here, the supply of the photoresist liquid and the photo-resistance gas may be simultaneously performed, or one of them may be supplied and then supplied. Further, even if the supply of the photo-resisting gas and the photo-resisting gas is simultaneously performed, it is not always necessary to set the timing of the start of supply and the stop of supply, and even the timing of starting or stopping the supply is required. The deviation is also fine. Then, after the gas supply mechanism 3 returns to the standby position, the application start command of the coating liquid is output from the control unit 7 to the moving mechanism 44 and the liquid level sensor 52. Thereby, the coating nozzle 4 is moved all the way to the coating start position shown in FIG. 7(b), and the liquid level sensor 52 detects the liquid level height position in the coating liquid tank 5, and outputs Go to the control unit 7. In the above-described manner, -17-201143914, after the control unit 7 obtains the liquid level height position as the reference height position, the start command is output to the valve V1 and the pump P1. Thereby, the valve V1 is opened, and a specific amount of the coating liquid R is sent out from the coating liquid tank 5 to the coating nozzle 4 by the pump P1. Here, as described above, the coating liquid is applied between the coating nozzle 4 and the wafer W by capillary action, but this capillary phenomenon is the discharge port 4 of the coating nozzle 4. This occurs only when the wafer W is brought into contact with the coating liquid. Therefore, at the start of coating, the coating liquid R is supplied by the pump P], and the coating liquid R is surely present between the discharge port 4 1 and the wafer W in advance. Even if the pump P1 is stopped afterwards, the coating liquid is pulled out from the discharge port 41 by capillary action. At this time, the amount of the coating liquid R pushed out by the reaction P 1 is such that the coating liquid R discharged from the discharge port 41 is connected to the wafer W to the extent that the nozzle 4 is applied. The distance L2 from the surface of the wafer W is extremely small because it is about 0.1 mm to 0.4 mm. Further, since the discharge port 4 1 of the coating nozzle 4 is set to have a size that covers the diameter of the wafer W, the coating unit 4 is formed at the discharge port 4 1 and does not have a coating target. The area of the wafer W. However, as described above, since the amount of the coating liquid pushed out from the discharge port 41 by the pump p is extremely small, the discharge port 4 of the wafer W to be coated does not exist. In addition, although the coating liquid R bulges, the coating liquid R may be stretched only on the side of the discharge port 4 1 where the wafer W is connected to the wafer W. As a result, even if the discharge port 41 of the wafer W to be coated does not exist, the coating liquid does not fall to the cup body 13. -18·201143914 Then, as shown in FIG. 7(c), the coating nozzle 4 is moved from the one end side of the wafer W held on the spin chuck 2 to the other end side by the moving mechanism 44. At the same time, the coating liquid R is applied to the wafer W to form a coating film. At this time, as described above, the flow path (the flow path 4 3 , the coating liquid flow path 4 2 , and the discharge port 4 1 ) of the coating liquid in the coating nozzle 4 is formed into a capillary shape, and therefore, coating is performed. The coating liquid R is applied between the nozzle 4 and the wafer W by capillary action. That is, the discharge port 4 1 of the coating nozzle 4 and the wafer W are brought into contact by the coating liquid R, and the coating liquid R is taken from the wafer w by the movement of the coating nozzle 4 The discharge port 4 1 is pulled out by capillary action and coated. Further, in the coating liquid tank 5, since the upper surface is opened to the atmosphere, and the principle of the communication tube acts between the coating liquid tank 5 and the coating nozzle 4, the discharge port 4 1 is The coating liquid in an amount to be compensated is supplied from the coating liquid tank 5 to the coating nozzle 4. At this time, at the liquid level sensor 52, the liquid level of the coating liquid in the coating liquid tank 5 is detected at a specific timing, and the detection enthalpy is output to the control unit 7. Then, the control unit 7 compares the detection flaw with the reference height position, and controls the elevating mechanism 53 such that the liquid level of the coating liquid in the coating liquid tank 5 coincides with the reference height position. In this manner, by making the heights of the liquid surfaces in the coating liquid tank 5 coincide with each other, the discharge amount of the coating liquid from the discharge port 4 1 of the coating nozzle 4 can be made uniform. After the coating nozzle 4 is moved to the other end side of the wafer W as shown in FIG. 8(a) and the coating liquid R for the wafer w is applied, the control unit 7 is controlled. For the moving mechanism 44, the valve V1, and the liquid surface -19-201143914, the sensor 52 outputs a coating end command. Thereby, the valve V1 is closed, and the detection of the liquid level by the liquid level sensor 52 is ended, and the coating nozzle 4 is moved to the standby position by the moving mechanism 44. Here, at the end, there is a region where the wafer W to be coated is not present at the discharge port 41 of the coating nozzle 4, but the discharge port 4 of the corresponding wafer W does not exist. At one point, capillary phenomenon does not occur, and there is no possibility that the coating liquid is pulled out through the wafer W. Therefore, the coating liquid is suspended from the discharge port 4 1 of the wafer W on which the object is applied, and the coating liquid hardly occurs. In this manner, a coating film of the photoresist liquid as the coating liquid R is formed on the wafer W at a film thickness of, for example, about 10 m. Thereafter, as shown in Fig. 8(b), the wafer W to which the coating liquid R is applied is rotated without rotating the coating liquid R from the wafer W. Here, since the coating liquid is applied by the capillary phenomenon from the coating nozzle 4, the film thickness of the coating film on the wafer W is extremely thin at about 1 〇 // m. Therefore, even if the wafer W is rotated, the coating liquid R is in a state in which it is difficult to scatter, and the number of rotations in which the coating liquid R is not scattered is, for example, a rotation number of about 100 rpm to 500 rpm. In this manner, by rotating the wafer W to which the coating liquid R is applied, the coating liquid R on the wafer W is moved by the centrifugal force, so that it can be on the surface of the wafer W. The uniformity of the film thickness of the coating film is improved. By this series of processes, the coating liquid is applied onto the surface of the wafer W to form a coating film. However, after coating the coating liquid for a specific number of wafers W, The coating liquid storage tank 6 supplies a specific amount of the coating liquid into the coating liquid tank 5. Here, as described above, the thickness of the coating film on the wafer W is -20 to 201143914, and the thickness of the coating liquid in the coating liquid tank 5 is constant. Since the adjustment is performed, it is possible to apply the coating liquid R on the surface of the wafer while ensuring a certain degree of uniformity. However, in recent years, since the photoresist pattern has become more precise, it has been required to further improve the uniformity of the film thickness of the coating film. At this time, if the liquid level adjustment of the coating liquid in the coating liquid tank 5 is precisely performed, the film thickness uniformity of the coating film is theoretically improved, but actually, the coating amount of the coating liquid is applied. Since it is extremely small, the amount of change in the liquid level is also small, and it is difficult to maintain the height position of the liquid surface at a constant level. On the other hand, by applying the coating liquid R to the surface of the wafer W while ensuring a certain degree of uniformity in advance, and further rotating the wafer w, the film thickness uniformity of the coating film can be further improved. In this case, it is effective because the film thickness uniformity can be surely improved by a simple method. At this time, by rotating the wafer w, the coating liquid R on the wafer W is moved outward by the centrifugal force. However, by the surface tension of the outer periphery of the wafer, the photoresist liquid becomes difficult to crystallize. The circle overflows outside. Further, since the peripheral region 11 of the wafer W is made of photoresist, the photoresist on the wafer W before the rotation is present on the outermost circumference and on the center side, even if it is In the case where the spin chuck 2 is rotated at a high speed and dried in the subsequent process, the allowable range of the rotation condition setting can be expanded.
由以上可知，在上述之實施形態中，係從塗佈噴嘴4 之吐出口 41來藉由毛細管現象而將塗佈液拉出並塗佈在晶 圓W上，藉由毛細管現象所被拉出之塗佈液的量，係爲極 少。又，由於係在使塗佈噴嘴4之吐出口 4 1近接於晶圓W -21 - 201143914 的狀態下，而一面使塗佈噴嘴4移動一面進行塗佈’因此 ，係不會有如同旋轉塗佈時—般之從晶圓w而飛散的塗佈 液。故而，係能夠謀求塗佈液之省量化。 進而，由於係並不會有塗佈液從晶圓W而飛散之虞’ 因此，係並不需要從被保持在旋轉吸盤2之晶圓W的上方 側起而涵蓋下方側地來設置能夠對於塗佈液所飛散之區域 作涵蓋一般之大的杯體，而能夠謀求裝置之小型化。更進 而，由於係在藉由毛細管現象來將塗佈液作了塗佈後，進 一步以不會使塗佈液飛散之程度的旋轉數來使晶圆W旋轉 ，因此，係能夠在塗佈膜之膜厚處確保高度的面內均一性 ，在形成精密之光阻圖案的情況時，係爲有效。 於上述構成中，塗佈裝置亦可如同圖9中所示一般地 來構成。此例之與上述實施形態的塗佈裝置相異之點，係 在於：於塗佈液之塗佈開始時，代替藉由幫浦P 1來將塗佈 液從塗佈噴嘴4推出，係使用輔助噴嘴8來對於塗佈噴嘴4 和晶圓W之間供給塗佈液R。此輔助噴嘴8，係被與具備有 閥或幫浦等之塗佈液供給部8 1作連接，並例如在塗佈液槽 5和塗佈噴嘴4之間而以不會對於塗佈噴嘴4之移動或者是 對於旋轉吸盤2之晶圓W的遞交造成阻礙的方式來作設置 〇 而後，在此例中，例如係構成爲根據從控制部7而來 之塗佈開始指令，而例如在使塗佈噴嘴4移動到了塗佈開 始位置處的時序下，來從輔助噴嘴8而對於塗佈噴嘴4和晶 圓W表面之間供給塗佈液R。此時，從輔助噴嘴8所供給之 -22- 201143914 塗佈液R的量，係爲能夠將塗佈噴嘴4之吐出口 41和晶圓w 表面之間藉由塗佈液R來作連接的程度。在此種構成中， 亦與第1實施形態相同的，能夠謀求塗佈液之省量化以及 小型化，並能夠對於塗佈液之膜厚而得到高度均一性。 進而，塗佈裝置亦可如同圖10中所示一般地來構成。 此例之與第1實施形態的塗佈裝置相異之點，係在於成爲 與塗佈噴嘴4一同地而亦使塗佈液槽5作移動之構成。例如 ，於此例中，塗佈噴嘴4和塗佈液槽5係被整合在噴嘴單元 83之內部，此噴嘴單元83係構成爲藉由移動機構44而在與 吐出口 41相交叉之方向上自由移動。 在噴嘴單元8 3內部，係亦被設置有將塗佈噴嘴4和塗 佈液槽5作連結之塗佈液供給路徑5 1、將塗佈液槽5內之塗 佈液的液面檢測出來之液面感測器52、塗佈液槽5之升降 機構53。並且，係構成爲根據從液面感測器52而來之檢測 値來藉由控制部7而對~於塗佈液槽5之升降機構53作控制。 此些之構成，係與第1實施形態之塗佈裝置相同。又，連 結塗佈液槽5和塗佈液儲槽6之供給路徑6 1，係構成爲可撓 ，當噴嘴單元8 3移動時，供給路徑6 1之形狀係會改變。在 此種構成中，亦與第1實施形態相同的，能夠謀求塗佈液 之省量化以及小型化，並能夠對於塗佈液之膜厚而得到高 度均一性。 進而，在上述之構成中，係使塗佈噴嘴4相對於晶圓 W而在與吐出口 41交叉之方向上作了移動’但是，亦可並 不使塗佈噴嘴4側移動，而設爲使旋轉吸盤2側在與吐出口 -23- 201143914 41相交叉之方向上作移動。又，亦可如圖11中所示一般， 將塗佈噴嘴4設爲使旋轉吸盤2上之晶圓W的中心和吐出口 41之長邊方向的中心相對應，並且將吐出口 41近接於晶圓 W表面地來作配置，而藉由使旋轉吸盤2側作半圈旋轉， 來塗佈塗佈液。此時，係亦可並不使旋轉吸盤2側作旋轉 ，而是使塗佈噴嘴4側以吐出口 4 1之長邊方向的中心爲軸 地來作旋轉。於此情況，爲了使在塗佈噴嘴4之長邊方向 上的每單位面積之塗佈液的吐出量相一致，亦可將從吐出 口 4 1而來之塗佈液的吐出速度，控制爲在晶圓W之中心側 而爲慢並在晶圓W之外周側而爲快。 接著，以圖1 2以及圖1 3爲例，針對將塗佈噴嘴4之吐 出口 4 1朝向上方來作配置的W施形態作說明。圖1 2 ( a ) 中，84係爲將晶圓W略水平地作吸附保持並且在水平軸周 圍而作反轉之反轉機構。此反轉機構，例如係具備有：藉 由真空吸附或者是靜電吸附來將晶圓W作吸附保持之平台 86、和使此平台86沿著水平之旋轉軸85來作旋轉之旋轉機 構87。例如，平台86，係構成爲將晶圓W之中央側作吸附 保持。而後，例如如圖1 2 ( b )中所示一般，設定爲就算 是當在其與將晶圓W之周緣側作保持的搬送臂1 5之間而進 行晶圓W之遞交時而使搬送臂15相對於平台86而作進退， 亦不會使搬送臂15與平台86相接觸一般的大小》 氣體供給機構3、塗佈噴嘴4、塗佈液槽5等，除了塗 佈噴嘴4之吐出口 4 1係朝向上側以外，係被設爲與第1實施 形態之塗佈裝置1相同的構成。亦即是，在此例中，亦係 -24- 201143914 同樣的將在塗佈噴嘴4內之包含吐出口 4 1的塗佈液之流路 構成爲毛細管狀，並且，塗佈液槽5內之塗佈液的液面高 度，係構成爲較塗佈噴嘴4之吐出口 41的高度更低。如此 一來，在塗佈噴嘴4之吐出口 4 1和晶圓W之間，係藉由毛 細管現象而將塗佈液拉出，在塗佈噴嘴4和塗佈液槽5之間 ，係成爲藉由通連管之原理而供給塗佈液。 在此構成中，首先，如圖13 ( a )中所示一般，從搬 送臂I5而將晶圓W遞交至平台86處，並將晶圓W吸附保持 在該平台8 6上。而後，使氣體供給機構3下降至對於晶圓 W供給氣體的位置，並對於晶圓W之週緣區域1 1以及中央 區域1 2分別供給撥光阻劑化氣體以及親光阻劑化氣體。於 此’當從搬送臂15而將晶圓W遞交至平台86處時，係使將 晶圓W作了保持的搬送臂15從平台86之上方而下降，並將 晶圓W遞交至平台86上，而後，使搬送臂15後退，而進行 之。 接著，如圖1 3 ( b )中所示一般，在將晶圓W吸附保 持在平台8 6上的狀態下，藉由旋轉機構8 7來使該平台8 6反 轉’並使晶圓W表面朝向下方。在進行此晶圓W之反轉動 作時’係預先使氣體供給機構3以及塗佈噴嘴4以不會對於 前述反轉動作造成妨礙的方式來移動至待機位置處。而後 ’在使塗佈噴嘴4之吐出口 4 1近接於晶圓W表面的狀態下 ’藉由移動機構44來從晶圓W之其中一端側起移動至另外 —端側處’並與第1實施形態相同的，而利用毛細管現象 來從塗佈噴嘴4而將塗佈液R塗佈在晶圓W表面上。在如此 -25- 201143914 這般地而對於晶圓w進行了塗佈液R之塗佈後，藉由旋轉 機構87，來以使晶回W表面朝向上側的方式而將平台86反 轉。此時，係成爲使在表面上被塗佈有塗佈液R之晶圓W 反轉，但是，由於塗佈膜之膜厚係爲l〇//m左右而爲非常 薄，因此，在反轉動作中，係並不會有發生液下垂或者是 液偏移之虞。 如此這般地而在平台86上以朝向上方的方式來作了放 置的晶IHW，係藉由搬送臂15而被作接收，並被搬送至旋 轉單元88處。此旋轉單元88，係具備有將晶圓W作吸附保 持並且在鉛直軸周圍作旋轉之旋轉平台89，晶圓W係從搬 送臂15而被遞交至該旋轉平台89處。在旋轉單元88處，係 對於被塗佈了塗佈液R之晶圓W，而以不會使該塗佈液R從 晶圓W而飛散的旋轉數（例如lOOrpm〜500rpm)來作旋轉 〇 在此種構成中，亦係與上述之實施形態相同的，由於 係從塗佈噴嘴4來利用毛細管現象而將塗佈液作塗佈，因 此，係能夠謀求塗佈液之省量化以及裝置之小型化，並且 ，由於係在塗佈液之塗佈後再使晶圓W旋轉，因此，係能 夠將塗佈液之膜厚的均一性更加提高。 又，就算是在此種將塗佈噴嘴4之吐出口 4 1朝向上方 來配置的情況時，亦同樣的，可在塗佈開始時而從輔助噴 嘴8來對於晶圓W和塗佈噴嘴4之間供給塗佈液，又，亦可 使塗佈噴嘴4和塗佈液槽5—同作移動。 於以上，在本發明中，亦可設爲：對於晶圓W塗佈塗 -26- 201143914 佈液，並接著以不會使晶圓W上之塗佈液從晶圓W而飛散 的旋轉數來使該晶圓W旋轉，之後，再進行將旋轉數增大 爲例如5 00rpm〜2000rpm左右並使晶圓上之塗佈液乾燥的 工程。 又，本發明，係只要實施使塗佈噴嘴之吐出口在對於 前述晶圓而接近了的狀態下來一面相對性地移動一面從前 述吐出口來藉由毛細管現象而將塗佈液拉出並塗佈在晶圓 W上之工程、並接著實施以不會使晶圓W上之塗佈液從晶 圓W而飛散的旋轉數來使該晶圓W旋轉之工程即可，塗佈 裝置之構成，係並不被限定於上述之實施形態。故而，在 塗佈噴嘴4之吐出開始時而用以將塗佈液推出的幫浦P 1或 者是輔助噴嘴8，係並非爲必要之構成。 進而，在上述實施形態中，雖係使用氣體供給機構3 而對於晶圓W之週緣區域1 1供給撥光阻劑化氣體，並對於 晶圓W之中央區域1 2供給親光阻劑化氣體，但是，此些之 撥光阻劑化氣體以及親光阻劑化氣體的供給，係並非爲絕 對必要。又，亦可設爲僅供給撥光阻劑化氣體之構成，且 亦可將氣體供給機構3設置在與塗佈裝置1相異之單元處。 更進而，塗佈了塗佈液之晶圓W的旋轉，係亦可設爲 藉由與塗佈裝置1相異之單元來進行。又，本發明，係亦 可適用在將光阻液或反射防止膜形成用之藥液、顯像液、 聚醯亞胺等塗佈在基板上之塗佈裝置中，在本發明之基板 中’係並不僅是半導體晶圓，而亦包含有液晶顯示器用的 玻璃基板（L C D基板）或者是太陽電池用基板等之基板。 -27- 201143914 【圖式簡單說明】 〔圖1〕對於本發明之塗佈裝置的第1實施形態作展示 之剖面圖。 〔圖2〕對於前述塗佈裝置之一部份作展示之立體圖 〇 〔圖3〕對前述塗佈裝置作展示的平面圖。 〔圖4〕對於被設置在前述塗佈裝置處之氣體供給機 構的其中一例作展示之剖面圖。 〔圖5〕對於被設置在前述塗佈裝置處之塗佈噴嘴的 其中一例作展示之立體圖。 〔_ 6〕對於被設置在前述塗佈裝置處之塗佈噴嘴和 塗佈液槽的其中一例作展示之剖面圖。 〔圖7〕對於本發明之塗佈方法的其中一種實施形態 作展示之工程圖。 〔圖8〕對於本發明之塗佈方法的其中一種實施形態 作展示之工程圖。 〔圖9〕對於本發明之塗佈裝置的其他實施形態作展 示之剖面圖。 〔圖1 0〕對於本發明之塗佈裝置的另一其他實施形態 作展示之剖面圖。 .〔圖11〕對於本發明之塗佈裝置的另一其他實施形態 之一部份作展示的立體圖。 〔圖1 2〕本發明之塗佈裝置的另一其他實施形態之剖 面圖 -28- 201143914 〔圖1 3〕對於前述塗佈裝置之作用作展示的工程圖。 【主要元件符號說明】 2 :旋轉吸盤 4 :塗佈噴嘴 4 1 :吐出口 44 :移動機構 5 :塗佈液槽 7 :控制部 W i半導體晶圓 -29 -As described above, in the above-described embodiment, the coating liquid is pulled out from the discharge port 41 of the coating nozzle 4 by capillary action and applied to the wafer W, and is pulled out by capillary action. The amount of the coating liquid is extremely small. Further, since the discharge port 4 1 of the coating nozzle 4 is brought close to the wafer W-21-201143914, the coating nozzle 4 is moved while being applied. Therefore, there is no like spin coating. Cloth-like coating liquid that is scattered from the wafer w. Therefore, it is possible to quantify the coating liquid. Further, since the coating liquid does not scatter from the wafer W, it is not necessary to provide a coating from the upper side of the wafer W held by the spin chuck 2 to cover the lower side. The area where the coating liquid scatters covers a generally large cup, and the size of the apparatus can be reduced. Further, since the coating liquid is applied by capillary action, the wafer W is further rotated by the number of rotations without scattering the coating liquid, so that the coating film can be applied. The film thickness ensures a high in-plane uniformity and is effective in forming a precise photoresist pattern. In the above configuration, the coating device can also be constructed generally as shown in Fig. 9. This example differs from the coating apparatus of the above-described embodiment in that, when the application of the coating liquid is started, instead of pushing the coating liquid from the coating nozzle 4 by the pump P1, it is used. The auxiliary nozzle 8 supplies the coating liquid R between the coating nozzle 4 and the wafer W. The auxiliary nozzle 8 is connected to a coating liquid supply portion 81 having a valve or a pump, and is, for example, between the coating liquid tank 5 and the coating nozzle 4 so as not to be applied to the coating nozzle 4. The movement is performed in such a manner as to hinder the delivery of the wafer W of the spin chuck 2, and in this example, for example, it is configured to be based on a coating start command from the control unit 7, for example, The coating nozzle 4 is moved to the timing at the application start position to supply the coating liquid R between the coating nozzle 4 and the surface of the wafer W from the auxiliary nozzle 8. At this time, the amount of the coating liquid R supplied from the auxiliary nozzle 8 is 214-201143914, and the discharge port 41 of the coating nozzle 4 and the surface of the wafer w can be connected by the coating liquid R. degree. In this configuration, as in the first embodiment, it is possible to reduce the size and size of the coating liquid, and to obtain high uniformity with respect to the film thickness of the coating liquid. Further, the coating device can also be constructed generally as shown in FIG. This example differs from the coating apparatus of the first embodiment in that the coating liquid tank 5 is moved together with the coating nozzle 4. For example, in this example, the coating nozzle 4 and the coating liquid tank 5 are integrated inside the nozzle unit 83, and the nozzle unit 83 is configured to cross the discharge port 41 by the moving mechanism 44. Move freely. Inside the nozzle unit 8.3, a coating liquid supply path 51 for connecting the coating nozzle 4 and the coating liquid tank 5 is provided, and the liquid level of the coating liquid in the coating liquid tank 5 is detected. The liquid level sensor 52 and the lifting mechanism 53 of the coating liquid tank 5. Further, the control unit 7 controls the elevating mechanism 53 of the coating liquid tank 5 based on the detection 从 from the liquid level sensor 52. The constitution of these is the same as that of the coating apparatus of the first embodiment. Further, the supply path 610 for the connection coating liquid tank 5 and the coating liquid storage tank 6 is configured to be flexible, and the shape of the supply path 61 changes when the nozzle unit 83 moves. In the same configuration as in the first embodiment, it is possible to reduce the size and size of the coating liquid, and to obtain high uniformity with respect to the film thickness of the coating liquid. Further, in the above-described configuration, the coating nozzle 4 is moved in the direction intersecting the discharge port 41 with respect to the wafer W. However, the coating nozzle 4 may be moved without moving the coating nozzle 4 side. The side of the spin chuck 2 is moved in a direction crossing the discharge port -23-201143914 41. Further, as shown in FIG. 11, the coating nozzle 4 may be configured such that the center of the wafer W on the spin chuck 2 corresponds to the center of the longitudinal direction of the discharge port 41, and the discharge port 41 is adjacent to the discharge port 41. The wafer W is disposed on the surface, and the coating liquid is applied by rotating the side of the spin chuck 2 in a half turn. In this case, the side of the coating nozzle 4 may be rotated about the center of the longitudinal direction of the discharge port 4 1 without rotating the side of the spinnerch 2 . In this case, in order to match the discharge amount of the coating liquid per unit area in the longitudinal direction of the coating nozzle 4, the discharge speed of the coating liquid from the discharge port 41 can be controlled to It is slow on the center side of the wafer W and fast on the outer side of the wafer W. Next, a description will be given of a configuration in which the discharge port 4 1 of the coating nozzle 4 is disposed upward as an example of FIG. 12 and FIG. In Fig. 1 2 (a), 84 is an inversion mechanism for adsorbing and holding the wafer W horizontally and reversing around the horizontal axis. The reversing mechanism includes, for example, a stage 86 for holding and holding the wafer W by vacuum suction or electrostatic adsorption, and a rotating mechanism 87 for rotating the stage 86 along the horizontal rotating shaft 85. For example, the stage 86 is configured to adsorb and hold the center side of the wafer W. Then, for example, as shown in FIG. 12 (b), it is set to be transported even when the wafer W is delivered between the transfer arm 15 and the transfer arm 15 that holds the peripheral side of the wafer W. The arm 15 advances and retreats relative to the platform 86, and does not cause the transfer arm 15 to contact the platform 86. The general size of the gas supply mechanism 3, the coating nozzle 4, the coating liquid tank 5, and the like, except for the spout of the coating nozzle 4. The outlet 41 is oriented in the same manner as the coating device 1 of the first embodiment except that it faces the upper side. In other words, in this example, the flow path of the coating liquid containing the discharge port 41 in the coating nozzle 4 is also formed into a capillary shape, and the inside of the coating liquid tank 5 is also the same. The liquid level of the coating liquid is configured to be lower than the height of the discharge port 41 of the coating nozzle 4. As a result, the coating liquid is pulled out between the discharge port 4 1 of the coating nozzle 4 and the wafer W by capillary action, and is formed between the coating nozzle 4 and the coating liquid tank 5 The coating liquid is supplied by the principle of a communication tube. In this configuration, first, as shown in Fig. 13 (a), the wafer W is delivered from the transfer arm I5 to the stage 86, and the wafer W is adsorbed and held on the stage 86. Then, the gas supply mechanism 3 is lowered to a position where the gas is supplied to the wafer W, and the photoresisting gas and the photo-resisting gas are supplied to the peripheral region 1 1 and the central region 1 2 of the wafer W, respectively. Here, when the wafer W is delivered from the transfer arm 15 to the stage 86, the transfer arm 15 holding the wafer W is lowered from above the stage 86, and the wafer W is delivered to the stage 86. Then, the transfer arm 15 is moved backward and carried out. Next, as shown in FIG. 13 (b), in general, in a state where the wafer W is adsorbed and held on the stage 86, the stage 86 is reversed by the rotating mechanism 87 and the wafer W is The surface is facing downwards. When the reverse rotation of the wafer W is performed, the gas supply mechanism 3 and the coating nozzle 4 are moved to the standby position so as not to interfere with the reverse operation. Then, in a state where the discharge port 4 1 of the coating nozzle 4 is brought close to the surface of the wafer W, the moving mechanism 44 moves from one end side of the wafer W to the other end side and is the same as the first In the same embodiment, the coating liquid R is applied from the coating nozzle 4 to the surface of the wafer W by capillary action. After the coating liquid R is applied to the wafer w in the manner of -25-201143914, the table 86 is reversed by the rotation mechanism 87 so that the surface of the crystal return W faces upward. In this case, the wafer W coated with the coating liquid R on the surface is reversed. However, since the film thickness of the coating film is about 10 Å/m, it is very thin. In the turning action, there is no sag or liquid offset. The crystal IHW which is placed on the stage 86 in such a manner as to face upward is received by the transfer arm 15 and transported to the rotary unit 88. The rotating unit 88 is provided with a rotary table 89 for holding and holding the wafer W around the vertical axis, and the wafer W is delivered from the transfer arm 15 to the rotary table 89. At the rotation unit 88, the wafer W to which the coating liquid R is applied is rotated by a number of rotations (for example, 100 rpm to 500 rpm) that do not scatter the coating liquid R from the wafer W. In the same configuration as described above, since the coating liquid is applied from the coating nozzle 4 by the capillary phenomenon, it is possible to reduce the amount of the coating liquid and the apparatus. Since the wafer W is rotated after application of the coating liquid, the uniformity of the film thickness of the coating liquid can be further improved. Moreover, even when the discharge port 4 1 of the coating nozzle 4 is disposed upward, the wafer W and the coating nozzle 4 can be similarly supplied from the auxiliary nozzle 8 at the start of coating. The coating liquid is supplied between them, and the coating nozzle 4 and the coating liquid tank 5 can also be moved together. As described above, in the present invention, it is also possible to apply the coating liquid to the wafer W to -26-201143914, and then to rotate the coating liquid on the wafer W without scattering the coating liquid on the wafer W. The wafer W is rotated, and then the number of rotations is increased to, for example, about 500 rpm to 2000 rpm, and the coating liquid on the wafer is dried. Further, in the present invention, the coating liquid is pulled out and coated by the capillary phenomenon from the discharge port while the discharge port of the coating nozzle is relatively moved while being approached to the wafer. The process of coating on the wafer W, and then performing the process of rotating the wafer W without rotating the coating liquid on the wafer W from the wafer W, the composition of the coating device The system is not limited to the above embodiments. Therefore, the pump P 1 for pushing out the coating liquid at the start of the discharge of the coating nozzle 4 or the auxiliary nozzle 8 is not essential. Further, in the above embodiment, the photoresist supply gas is supplied to the peripheral region 1 1 of the wafer W by using the gas supply mechanism 3, and the photo-retardant gas is supplied to the central region 12 of the wafer W. However, the supply of such photoresist and gas to the photoresist is not absolutely necessary. Further, it is also possible to provide a configuration in which only the photoresist is supplied, and the gas supply mechanism 3 may be provided in a unit different from the coating device 1. Furthermore, the rotation of the wafer W to which the coating liquid is applied may be performed by a unit different from the coating apparatus 1. Moreover, the present invention can also be applied to a coating apparatus for applying a chemical solution for forming a photoresist or an anti-reflection film, a developing liquid, a polyimide, or the like onto a substrate, in the substrate of the present invention. The system is not only a semiconductor wafer but also a substrate such as a glass substrate (LCD substrate) for a liquid crystal display or a substrate for a solar cell. -27-201143914 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a coating apparatus according to the present invention. Fig. 2 is a plan view showing a portion of the above coating apparatus. Fig. 3 is a plan view showing the coating apparatus. Fig. 4 is a cross-sectional view showing an example of a gas supply mechanism provided at the coating apparatus. Fig. 5 is a perspective view showing an example of a coating nozzle provided at the coating apparatus. [_6] A cross-sectional view showing an example of a coating nozzle and a coating liquid tank provided at the coating apparatus. Fig. 7 is a view showing the construction of one embodiment of the coating method of the present invention. Fig. 8 is a view showing the construction of one embodiment of the coating method of the present invention. Fig. 9 is a cross-sectional view showing another embodiment of the coating apparatus of the present invention. Fig. 10 is a cross-sectional view showing another embodiment of the coating apparatus of the present invention. Fig. 11 is a perspective view showing a part of another embodiment of the coating apparatus of the present invention. [Fig. 1 2] A cross-sectional view of another embodiment of the coating apparatus of the present invention -28-201143914 [Fig. 13] A drawing showing the action of the above coating apparatus. [Main component symbol description] 2 : Rotary suction cup 4 : Coating nozzle 4 1 : Discharge port 44 : Moving mechanism 5 : Coating liquid tank 7 : Control unit W i Semiconductor wafer -29 -