JP2015097268A - Coating processing method, and recording medium having program for executing coating processing method recorded therein - Google Patents

Coating processing method, and recording medium having program for executing coating processing method recorded therein Download PDF

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JP2015097268A
JP2015097268A JP2014236643A JP2014236643A JP2015097268A JP 2015097268 A JP2015097268 A JP 2015097268A JP 2014236643 A JP2014236643 A JP 2014236643A JP 2014236643 A JP2014236643 A JP 2014236643A JP 2015097268 A JP2015097268 A JP 2015097268A
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wafer
substrate
airflow control
control plate
step
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Japanese (ja)
Inventor
孝介 ▲吉▼原
孝介 ▲吉▼原
Kosuke Yoshihara
康治 ▲高▼▲柳▼
康治 ▲高▼▲柳▼
Yasuharu Takayanagi
真一 畠山
Shinichi Hatakeyama
真一 畠山
浩平 川上
Kohei Kawakami
浩平 川上
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東京エレクトロン株式会社
Tokyo Electron Ltd
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Priority to JP2014236643A priority patent/JP2015097268A/en
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Abstract

PROBLEM TO BE SOLVED: To provide a coating processing method that enables the control of a film thickness at any position in a substrate surface, and a reduction in variation of film thickness in the substrate surface.SOLUTION: A coating processing method includes: a first step S1 of supplying a coating liquid to the surface of a substrate while the substrate is rotated at a first rotation speed; a second step S2 of stopping, after the first step, the supply of the coating liquid at the time of reducing the rotation speed of the substrate to a second rotation speed, which is slower than the first rotation speed, or while the substrate is rotated at the second rotation speed; and a third step S3 of rotating, after the second step, the substrate at a third rotation speed, which is faster than the second rotation speed. The coating processing method further includes moving an airflow control plate movably provided at a predetermined position above the substrate to a predetermined position with a driving unit, after the supply of the coating liquid to the surface of the substrate is stopped and while the substrate is being rotated, so as to locally change the airflow above the rotating substrate.

Description

  The present invention relates to a coating processing method and a recording medium on which a program for executing the coating processing method is recorded.

  In a photolithography process in a semiconductor device manufacturing process, a predetermined resist pattern is formed by sequentially performing a coating process, an exposure process, a development process, and the like on a substrate, that is, a wafer such as a semiconductor wafer. In the coating process, a resist solution is applied, and the applied resist solution is heat-treated to form a resist film. In the exposure process, the formed resist film is exposed to a predetermined pattern. In the development process, the exposed resist film is developed.

  In the above-described coating process, a resist solution is supplied from the nozzle to the center of the surface of the rotating wafer, and the resist solution is applied to the wafer surface by diffusing the resist solution to the outer peripheral side of the wafer by centrifugal force. A spin coating method is often used (for example, refer to Patent Documents 1 and 2).

JP 2009-78250 A Japanese Patent No. 3890026

  However, when a resist solution is formed on the surface of the wafer by a coating process using the spin coating method as described above, there are the following problems.

  It is possible to change the film thickness of the resist film by changing control parameters such as the rotation speed of the wafer, the wafer temperature, and the resist solution. However, for example, as the rotational speed of the wafer is increased or the wafer temperature is increased, a convex film thickness distribution in which the film thickness in the central part is thicker than that in the peripheral part, so that the film thickness in the peripheral part is thicker than in the central part. The film thickness distribution may change. Therefore, the film thickness distribution in the wafer surface changes only by changing the control parameters described above, and the film thickness distribution cannot be precisely controlled.

  Further, in recent years, it is required to reduce the supply amount of the resist solution applied to one wafer as much as possible from the viewpoints of material saving and cost saving. For example, there are cases where the supply amount of a resist solution necessary for coating the entire surface of a wafer having a diameter of 300 mmφ is required to be 0.5 ml or less. In this way, when the supply amount of the resist solution is small, the solvent is volatilized and the viscosity is easily increased as compared with the case where the supply amount is large. Therefore, the direction is changed to increase the wafer rotation speed or increase the wafer temperature. I can't. Therefore, it becomes difficult to control the convex film thickness distribution in which the film thickness in the central part is larger than that in the outer peripheral part so that the film thickness is uniform between the central part and the outer peripheral part.

  As shown in Patent Document 2, there is also a method of making the film thickness distribution on the substrate uniform by providing an airflow adjusting member along the periphery of the substrate having a rectangular shape. However, it is difficult to make uniform the film thickness distribution in the plane of various shapes of the substrate including the circular shape only by providing the airflow adjusting member on the periphery of the substrate.

  The above-described problem is a common problem even when various coating solutions other than the resist solution are applied onto the wafer surface by a spin coating method.

  The present invention has been made in view of the above points. When a coating solution is applied by spin coating to form a film, the film thickness at an arbitrary position in the substrate surface can be controlled, and the substrate surface can be controlled. The coating processing method which can reduce the film thickness variation of is provided.

  According to an embodiment of the present invention, the coating liquid is applied to the surface of the substrate by supplying the coating liquid to the surface of the rotating substrate and diffusing the supplied coating liquid to the outer peripheral side of the substrate. In the processing method, in a state where the substrate is rotated at a first rotation speed, a first step of supplying a coating liquid to the surface of the substrate, and after the first step, the substrate is moved to the first step. The second step of stopping the supply of the coating liquid at the time of decelerating to a second rotational speed lower than the rotational speed of the first or the second rotational speed, and after the second step, A third step of rotating the substrate at a third rotational speed higher than the second rotational speed, and after the supply of the coating liquid to the surface of the substrate is stopped, the substrate is rotated. The airflow control plate provided so as to be movable to a predetermined position above the substrate , By moving to the predetermined position by the driving unit, locally changing the upper stream of the rotating substrate, coating treatment method is provided.

  According to the present invention, when a coating solution is applied by spin coating to form a film, the film thickness at an arbitrary position in the substrate surface can be controlled, and the film thickness variation in the substrate surface can be reduced. it can.

It is a top view which shows the structure of the resist pattern formation apparatus which concerns on 1st Embodiment. It is a schematic perspective view which shows the structure of the resist pattern formation apparatus which concerns on 1st Embodiment. It is a side view which shows the structure of the resist pattern formation apparatus which concerns on 1st Embodiment. It is a perspective view which shows the structure of a 3rd block. It is a longitudinal cross-sectional view which shows the outline of a structure of an application | coating module. It is a cross-sectional view which shows the outline of a structure of an application | coating module. It is a graph which shows the rotational speed of the wafer in each process of the resist coating process based on 1st Embodiment. It is a figure which shows the state of the surface of the wafer in each process of the resist application | coating process which concerns on 1st Embodiment. The film thickness distribution (Example 1) of the resist film obtained by the resist coating process according to the first embodiment is changed to the film thickness distribution (Example 1) of the resist film obtained by the resist coating process without using the airflow control plate ( It is a graph typically shown in comparison with Comparative Example 1). 6 is a graph showing measured values of the film thickness distribution of resist films obtained by performing Example 1 and Comparative Example 1; It is the top view and side view which show typically the positional relationship of an airflow control board and the wafer W. It is a graph which shows the result of having measured the largest film thickness difference (DELTA) Max, when changing the length dimension LX of the X direction of an airflow control board. It is a graph which shows the result of having measured the largest film thickness difference (DELTA) Max, when changing the width dimension WY1 of the Y direction of an airflow control board. It is sectional drawing which shows typically the airflow and film thickness distribution in the periphery of an airflow control board and a wafer. It is sectional drawing which shows typically the airflow and film thickness distribution in the circumference | surroundings of an airflow control board and a wafer when the height from the wafer surface of an airflow control board is made low. It is a graph which shows the rotational speed of the wafer in each process of the resist application | coating process which concerns on 2nd Embodiment. It is a perspective view which shows the principal part of the coating module by the 3rd Embodiment of this invention. It is a schematic diagram explaining the operation | movement in the application | coating module of FIG. It is a schematic diagram explaining the other operation | movement in the application | coating module of FIG. It is a figure which shows the modification of the airflow control board in the application | coating module by embodiment of this invention. It is a figure which shows the other modification of the airflow control board in the application | coating module by embodiment of this invention. It is a graph which shows the result of the experiment conducted in order to confirm the effect by the airflow control board of a modification.

(First embodiment)
First, a coating and developing treatment system according to a first embodiment of the present invention and a coating treatment method performed in the coating and developing treatment system will be described. This coating and developing processing system includes a coating module (coating processing apparatus) according to an embodiment of the present invention.

  First, a resist pattern forming apparatus in which an exposure apparatus is connected to a coating and developing treatment system according to an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a plan view showing a configuration of a resist pattern forming apparatus according to the present embodiment. FIG. 2 is a schematic perspective view showing the configuration of the resist pattern forming apparatus according to the present embodiment. FIG. 3 is a side view showing the configuration of the resist pattern forming apparatus according to the present embodiment. FIG. 4 is a perspective view showing the configuration of the third block B3.

  As shown in FIGS. 1 and 2, the resist pattern forming apparatus includes a carrier block ST1, a processing block ST2, and an interface block ST3. Further, an exposure apparatus ST4 is provided on the interface block ST3 side of the resist pattern forming apparatus. The processing block ST2 is provided adjacent to the carrier block ST1. The interface block ST3 is provided on the side opposite to the carrier block ST1 side of the processing block ST2 so as to be adjacent to the processing block ST2. The exposure apparatus ST4 is provided on the side opposite to the processing block ST2 side of the interface block ST3 so as to be adjacent to the interface block ST3.

  The carrier block ST1 includes a carrier 20, a mounting table 21, and delivery means C. The carrier 20 is mounted on the mounting table 21. The delivery means C is for taking out the wafer W from the carrier 20 and delivering it to the processing block ST2, receiving the processed wafer W processed in the processing block ST2, and returning it to the carrier 20.

  As shown in FIGS. 1 and 2, the processing block ST2 includes a shelf unit U1, a shelf unit U2, a first block (DEV layer) B1, a second block (BCT layer) B2, and a third block (COT layer). ) B3 and a fourth block (TCT layer) B4. In the first block B1, development processing is performed. In the second block B2, an antireflection film formed on the lower layer side of the resist film is formed. In the third block B3, a resist solution is applied on the antireflection film. In the fourth block B4, an antireflection film is formed on the resist film.

  The shelf unit U1 is configured by stacking various modules. As illustrated in FIG. 3, the shelf unit U1 includes, for example, delivery modules TRS1, TRS1, CPL11, CPL2, BF2, CPL3, BF3, CPL4, and TRS4 stacked in order from the bottom. Moreover, as shown in FIG. 1, the transfer arm D which can be moved up and down is provided in the vicinity of the shelf unit U1. Wafers W are transferred by the transfer arm D between the processing modules of the shelf unit U1.

  The shelf unit U2 is configured by stacking various processing modules. As illustrated in FIG. 3, the shelf unit U2 includes delivery modules TRS6, TRS6, and CPL12 stacked in order from the bottom, for example.

  In FIG. 3, the delivery module attached with CPL also serves as a cooling module for temperature control, and the delivery module attached with BF also serves as a buffer module on which a plurality of wafers W can be placed. ing.

  The first block B1 includes a developing module 22, a transport arm A1, and a shuttle arm E as shown in FIGS. The development module 22 is stacked in two upper and lower stages in one first block B1. The transfer arm A1 is for transferring the wafer W to the two-stage development module 22. That is, the transfer arm A1 is a common transfer arm for transferring the wafer W to the two-stage development module 22. The shuttle arm E is for directly transferring the wafer W from the delivery module CPL11 of the shelf unit U1 to the delivery module CPL12 of the shelf unit U2.

  The second block B2, the third block B3, and the fourth block B4 each have a coating module, a heating / cooling processing module group, and transfer arms A2, A3, and A4. The processing module group is for performing pre-processing and post-processing of processing performed in the coating module. The transfer arms A2, A3, A4 are provided between the coating module and the processing module group, and transfer the wafer W between the processing modules of the coating module and the processing module group.

  In each of the blocks from the second block B2 to the fourth block B4, the chemical solution in the second block B2 and the fourth block B4 is a chemical solution for the antireflection film, and the chemical solution in the third block B3 is a resist solution. Except for this, it has the same configuration.

  Here, with reference to FIG. 4, the configuration of the third block B3 will be described, representing the second block B2, the third block B3, and the fourth block B4.

  The third block B3 includes a coating module 23 (coating processing apparatus), a shelf unit U3, and a transfer arm A3. The shelf unit U3 includes a plurality of processing modules stacked so as to constitute a heat treatment module group such as a heating module and a cooling module. The shelf unit U3 is arranged to face the coating module 23.

  The transfer arm A3 is provided between the coating module 23 and the shelf unit U3. Reference numeral 24 in FIG. 4 is a transfer port for delivering the wafer W between each processing module and the transfer arm A3.

  The transfer arm A3 includes two forks 3 (3A, 3B), a base 25, a rotation mechanism 26, and a lifting platform 27.

  The two forks 3A and 3B are provided so as to overlap each other. The base 25 is provided by a rotation mechanism 26 so as to be rotatable around the vertical axis. Further, the forks 3A and 3B are provided so as to be able to advance and retract from the base 25 to, for example, a spin chuck 31 of the coating module 23 described later by an advancing / retreating mechanism (not shown).

  As shown in FIG. 4, the lifting platform 27 is provided on the lower side of the rotation mechanism 26. The lifting platform 27 is provided so as to be movable up and down by a lifting mechanism along a Z-axis guide rail (not shown) extending linearly in the vertical direction (Z-axis direction in FIG. 4). As the elevating mechanism, a known configuration such as a ball screw mechanism or a mechanism using a timing belt can be used. In this example, the Z-axis guide rail and the elevating mechanism are each covered by a cover body 28, and are connected and integrated, for example, on the upper side. The cover body 28 is configured to slide along a Y-axis guide rail 29 that extends linearly in the Y-axis direction.

  The interface block ST3 has an interface arm F as shown in FIG. The interface arm F is provided in the vicinity of the shelf unit U2 of the processing block ST2. The wafer W is transferred by the interface arm F between the processing modules of the shelf unit U2 and between the exposure apparatuses ST4.

  The wafer W from the carrier block ST1 is sequentially transferred by the transfer means C to one transfer module of the shelf unit U1, for example, the transfer module CPL2 corresponding to the second block B2. The wafer W transferred to the transfer module CPL2 is transferred to the transfer arm A2 of the second block B2, and each processing module (coating module and each processing module of the processing module group of the heating / cooling system) is transferred via the transfer arm A2. ) And processed in each processing module. Thereby, an antireflection film is formed on the wafer W.

  The wafer W on which the antireflection film is formed is transferred to the transfer arm A3 of the third block B3 via the transfer arm A2, the transfer module BF2 of the shelf unit U1, the transfer arm D, and the transfer module CPL3 of the shelf unit U1. . Then, the wafer W is transferred to each processing module (each processing module in the processing module group of the coating module and the heating / cooling system) via the transfer arm A3, and processing is performed in each processing module. Thereby, a resist film is formed on the wafer W.

  The wafer W on which the resist film is formed is transferred to the transfer module BF3 of the shelf unit U1 via the transfer arm A3.

  In addition, an antireflection film may be further formed on the wafer W on which the resist film is formed in the fourth block B4. In this case, the wafer W is transferred to the transfer arm A4 of the fourth block B4 via the transfer module CPL4, and each processing module (coating module and each processing module group of the heating / cooling system) is transferred via the transfer arm A4. Processing module) and processing is performed in each processing module. Thereby, an antireflection film is formed on the wafer W. Then, the wafer W on which the antireflection film is formed is transferred to the transfer module TRS4 of the shelf unit U1 via the transfer arm A4.

  The wafer W on which the resist film is formed or the wafer W on which the antireflection film is further formed on the resist film is transferred to the transfer module CPL11 via the transfer arm D, the transfer module BF3, or the TRS4. The wafer W transferred to the transfer module CPL11 is directly transferred to the transfer module CPL12 of the shelf unit U2 by the shuttle arm E, and then transferred to the interface arm F of the interface block ST3.

  The wafer W transferred to the interface arm F is transferred to the exposure apparatus ST4 and subjected to a predetermined exposure process. The wafer W that has undergone the predetermined exposure processing is placed on the delivery module TRS6 of the shelf unit U2 via the interface arm F, and returned to the processing block ST2. The wafer W returned to the processing block ST2 is subjected to development processing in the first block B1. The developed wafer W is returned to the carrier 20 via the transfer arm A1, the transfer module TRS1 of the shelf unit U1, and the transfer means C.

  Next, with reference to FIG.5 and FIG.6, the structure of the application | coating module 23 which concerns on this Embodiment is demonstrated. FIG. 5 is a longitudinal sectional view showing an outline of the configuration of the coating module 23. FIG. 6 is a cross-sectional view showing an outline of the configuration of the coating module 23.

  The application module 23 includes a casing 30 as shown in FIG. 5, for example, and a spin chuck 31 (substrate holding unit) that holds the wafer W is provided in the center of the casing 30. The spin chuck 31 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 31 by suction from the suction port.

  The spin chuck 31 includes a chuck drive mechanism 32 including, for example, a motor, and can be rotated at a predetermined speed by the chuck drive mechanism 32 (rotating unit). Further, the chuck drive mechanism 32 is provided with a lifting drive source such as a cylinder, and the spin chuck 31 can move up and down.

  The rotational speed of the spin chuck 31 driven by the chuck drive mechanism 32 is controlled by a control unit 70 described later.

  Around the spin chuck 31, there is provided a cup 33 that receives and collects the liquid scattered or dropped from the wafer W. Connected to the lower surface of the cup 33 are a discharge pipe 34 for discharging the collected liquid and an exhaust pipe 35 for exhausting the atmosphere in the cup 33.

  As shown in FIG. 6, a rail 40 extending along the Y direction (left-right direction in FIG. 6) is formed on the negative side of the cup 33 in the X direction (downward direction in FIG. 6). The rail 40 is formed, for example, from the outer side of the cup 33 on the Y direction negative direction (left direction in FIG. 6) to the outer side on the Y direction positive direction (right direction in FIG. 6). For example, two arms 41 and 42 are attached to the rail 40.

  As shown in FIGS. 5 and 6, a resist solution nozzle 43 (supply unit) that discharges a resist solution as a coating solution is supported on the first arm 41. The first arm 41 is movable on the rail 40 by a nozzle driving unit 44 shown in FIG. As a result, the resist solution nozzle 43 can move from the standby unit 45 installed on the outer side of the cup 33 on the positive side in the Y direction to substantially above the center of the wafer W in the cup 33, and further on the surface of the wafer W. It can move in the radial direction of the wafer W. Further, the first arm 41 can be moved up and down by a nozzle driving unit 44, and the height of the resist solution nozzle 43 can be adjusted.

  As shown in FIG. 5, a supply pipe 47 that communicates with a resist solution supply source 46 is connected to the resist solution nozzle 43. The resist solution supply source 46 in the present embodiment stores a low-viscosity resist solution for forming a thin resist film, for example, a resist film of 150 nm or less. The supply pipe 47 is provided with a valve 48. When the valve 48 is opened, the resist solution is discharged from the resist solution nozzle 43. When the valve 48 is closed, the discharge of the resist solution is stopped.

  A solvent nozzle 50 that discharges the solvent of the resist solution is supported on the second arm 42. The second arm 42 is movable on the rail 40 by, for example, a nozzle driving unit 51 shown in FIG. 6, and the solvent nozzle 50 is moved from a standby unit 52 provided on the outer side of the cup 33 on the Y direction negative direction side. The wafer can be moved to a position substantially above the center of the wafer W in the cup 33. Further, the second arm 42 can be moved up and down by the nozzle driving unit 51, and the height of the solvent nozzle 50 can be adjusted.

  As shown in FIG. 5, a supply pipe 54 that communicates with a solvent supply source 53 is connected to the solvent nozzle 50. In the above configuration, the resist solution nozzle 43 that discharges the resist solution and the solvent nozzle 50 that discharges the solvent are supported by separate arms. However, the resist solution nozzle 43 and the solvent nozzle 50 may be provided to be supported by the same arm, and the movement and discharge timing of the resist solution nozzle 43 and the solvent nozzle 50 are controlled by controlling the movement of the arm. Also good.

  As shown in FIGS. 5 and 6, the third arm 61 supports an airflow control plate 63 that locally changes the airflow above the wafer W at an arbitrary position. The third arm 61 is movable on the rail 40 by a drive unit 64 shown in FIG. The drive unit 64 moves the airflow control plate 63 between a predetermined position above the wafer W in the cup 33 and a standby position separated laterally with respect to the wafer W held by the spin chuck 31 in the cup 33. Can move. It is possible to move from the outside of the Y direction negative side of the cup 33 to an arbitrary position on the wafer W in the cup 33, and further on the surface of the wafer W in the radial direction of the wafer W. The third arm 61 can be moved up and down by a drive unit 64 and the height of the airflow control plate 63 can be adjusted.

  The airflow control plate 63 is formed in a rectangular flat plate shape, and is substantially parallel to the wafer W at a predetermined position above the wafer W and away from the rotation axis RA (the same position as the center C1) of the wafer W. As shown in FIG. Further, when the airflow control plate 63 is disposed at a predetermined position above the wafer W by the driving unit 64 and away from the rotation axis RA (the same position as the center C1) of the wafer W, the airflow control plate 63 is above the rotating wafer W. The airflow is locally changed at an arbitrary position. Note that the wafer center side end PE of the airflow control plate 63 formed in a rectangular flat plate shape may be positioned between a position above the center C1 of the wafer W and a position above the outer edge E1. In addition, when the wafer W has a diameter of 300 mm, for example, the air flow control plate 63 is preferably disposed in an arbitrary range above the range of 50 mm to 100 mm from the center of the wafer W, and the wafer W has a diameter of 450 mm. Is preferably disposed in an arbitrary range above 100 mm to 175 mm from the center of the wafer W. The airflow control plate 63 is preferably disposed in an arbitrary range above the range of about 30% to about 80% of the radius of the wafer W from the center of the wafer W toward the outer periphery of the wafer W.

  The rotation operation of the spin chuck 31 by the chuck drive mechanism 32 is controlled by the control unit 70. Further, the movement of the resist solution nozzle 43 by the nozzle driving unit 44 and the discharge / stop of the resist solution from the resist solution nozzle 43 by the valve 48 are also controlled by the control unit 70. Further, the operation of the drive system such as the movement operation of the solvent nozzle 50 by the nozzle drive unit 51 and the movement operation of the airflow control plate 63 by the drive unit 64 is also controlled by the control unit 70. The control unit 70 is configured by a computer including, for example, a CPU, a memory, and the like, and can implement a resist coating process in the coating module 23 by executing a program stored in the memory, for example.

  The controller 70 controls the resist solution nozzle 43 to supply the resist solution to the surface of the wafer W. The control unit 70 is provided at a predetermined position while the wafer W is rotated by the chuck drive mechanism 32 while supplying the resist solution to the wafer W or after supplying the resist solution to the wafer W. The airflow control plate 63 controls the airflow above the rotating wafer W so as to be locally changed.

  Various programs for realizing the resist coating process in the coating module 23 are recorded on, for example, a computer-readable recording medium such as a CD, installed from the recording medium in the control unit 70, and executed by the control unit 70. The

  Next, a resist coating process (coating method) performed by the coating module 23 will be described.

  FIG. 7 is a graph showing the rotation speed of the wafer in each step of the resist coating process according to the present embodiment. FIG. 8 is a diagram showing the state of the surface of the wafer W in each step of the resist coating process according to the present embodiment.

  In the present embodiment, the controller 70 controls the rotation speed of the wafer W (that is, the rotation speed of the chuck drive mechanism 32), the discharge of the solvent from the solvent nozzle 50, and the discharge of the resist solution from the resist solution nozzle 43, Steps S0 to S2, S4, and S5 shown in FIG. 7 are performed. 8A to 8D schematically show the resist solution PR on the wafer W in steps S1, S2, S4, and S5 shown in FIG.

  First, the wafer W is transferred to the top of the spin chuck 31 of the coating module 23 by the fork 3 of the transfer arm A3. Then, the wafer W is vacuum-sucked by a spin chuck 31 that has been lifted by a lift drive means (not shown) formed of, for example, an air cylinder included in the chuck drive mechanism 32. After the wafer W is vacuum-sucked by the spin chuck 31, the transfer arm A <b> 3 retracts the fork 3 from the inside of the coating module 23 and completes the delivery of the wafer W to the coating module 23.

  Next, the pre-wet process step S0 shown in FIG. 7 is performed. In the pre-wet processing step S0, the entire surface of the wafer W is wetted with a solvent such as thinner prior to application of the resist solution PR. Specifically, as shown in FIG. 7, the wafer W is started to rotate, and the rotational speed is increased to 0 to 2000 rpm, more preferably 1000 rpm. While rotating the wafer W at this rotational speed (pre-wet rotational speed V0), for example, for 0.1 second, a thinner is supplied to the approximate center of the wafer W from the solvent nozzle 50 to diffuse the wafer W radially outward, The surface of the wafer W is wetted with a solvent. As a result, the resist solution PR is more easily diffused. As a result, a uniform resist film can be formed with a smaller amount of the resist solution PR, and the consumption of the resist solution PR can be further reduced. .

  Next, the first step S1 of FIG. 7 is performed. In the first step S1, the substrate (wafer W) is rotated at the first rotation speed V1, the resist solution PR is supplied onto the approximate center of the rotating wafer W, and the supplied resist solution PR is supplied to the center of the wafer W. This is a step of diffusing from the side to the outer peripheral side. Specifically, as shown in S1 of FIG. 7, the wafer W is accelerated to a rotational speed (first rotational speed V1) of 2000 to 4000 rpm, more preferably 2500 rpm, and rotated at the rotational speed V1. Then, while rotating the wafer W, for example, for 1.5 seconds, the resist solution is supplied from the resist solution nozzle 43 onto substantially the center of the wafer W, and is applied while being diffused to the outer peripheral side in the radial direction of the wafer W. FIG. 8A is a side view showing the state of the wafer W when the first step S1 is performed.

  Here, the supply amount of the resist solution PR supplied in the first step S1 is such that the outer periphery of the resist solution PR diffused to the outer peripheral side in the radial direction of the wafer W reaches the outer periphery of the wafer W at the above rotational speed. It is about half of the supply amount. Specifically, the resist solution supplied to the center side of the surface of the wafer W in the first step S1 is, for example, 0.5 ml, which is half of the conventionally supplied 1.0 ml. Therefore, as shown in FIG. 8A, in the first step S1, the outer periphery of the resist solution PR diffusing from the radial center to the outer periphery of the wafer W does not reach the outer periphery of the wafer W. It reaches only about half of the distance from the center of W to the outer periphery.

  Next, the second step S2 of FIG. 7 is performed. The second step S2 is a step of adjusting the shape of the diffused resist solution PR by rotating the wafer W at a second rotation speed V2 lower than the first rotation speed V1 after the first step S1. Specifically, as shown in FIG. 7, the wafer W is decelerated to a rotational speed (second rotational speed V2) of 50 to 2000 rpm, more preferably 100 rpm, and rotated at the rotational speed V2. As time for performing 2nd process S2, about 1.0 second is preferable, for example. FIG. 8B is a side view showing the state of the wafer W when the second step S2 is performed.

  In the second step S2, the supply of the resist solution PR is stopped when the wafer W is decelerated from the first rotation speed V1 to the second rotation speed V2 or rotated at the second rotation speed V2. To do.

  As shown in FIG. 8B, in the first step S1, the outer periphery of the resist solution that does not reach the outer periphery of the wafer W, for example, reaches only about half of the distance from the center of the wafer W to the outer periphery. The second step S2 is also at substantially the same position as in the first step S1. Further, as will be described later, the resist solution PR is arranged on the outer periphery of the diffused resist solution PR, and the shape of the resist solution PR is adjusted by increasing the thickness.

  Next, the third step in FIG. 7 is performed. The third step S3 is a step of rotating the wafer W at a third rotation speed V3 higher than the second rotation speed V2 at least at the start after the second process S2. The third step S3 includes, for example, a fourth step S4, a fifth step S5, and a sixth step S6.

  In the fourth step S4, after the second step S2, the wafer W is rotated at a third rotational speed V3 that is higher than the second rotational speed V2, and the resist solution PR whose shape is adjusted is changed to the diameter of the wafer W. This is a step of diffusing further to the outer peripheral side in the direction. Specifically, as shown in S4 of FIG. 7, the wafer W is accelerated to a rotational speed (third rotational speed V3) of 1000 to 4000 rpm, more preferably 1800 rpm, and rotated at the rotational speed V3. Then, while rotating the wafer W, the resist solution diffused to about half the distance from the radial center of the wafer W to the outer periphery in the first step S1 is further diffused to the outer peripheral side of the wafer W. The time for performing the fourth step S4 is preferably about 4 seconds, for example. FIG. 8C is a side view showing the state of the wafer W when the fourth step S4 is performed.

  As shown in FIG. 8C, in the fourth step S <b> 4, the outer periphery of the resist solution that diffuses to the outer peripheral side in the radial direction of the wafer W reaches the substantially outer periphery of the wafer W. In addition, the time for performing the fourth step S4 is preferably set to a short time of 5 seconds or less so that the resist solution PR does not lose fluidity in the fourth step S4.

  The fifth step S5 is a step of rotating the wafer W at a fourth rotation speed V4 lower than the third rotation speed V3 after the fourth step S4. In the fifth step S5, the air flow control plate 63 is disposed at a predetermined position above the wafer W by the driving unit 64 while the wafer W is rotated at the fourth rotation speed V4. The airflow above is changed locally. The fourth rotation speed V4 may be equal to the second rotation speed V2. Specifically, as shown in FIG. 7, the wafer W is decelerated to a rotational speed of 50 to 2000 rpm, for example, 100 rpm, and rotated at that rotational speed. As time for performing 5th process S5, about 1.0 second is preferable, for example. FIG. 8D is a side view showing the state of the wafer W when the fifth step S5 is performed.

  In addition, it is preferable that the 4th rotational speed V4 is 50-100 rpm. Thereby, the difference of the volatilization rate of a solvent can be enlarged between the peripheral area | region of the wafer center side edge part PE of the airflow control board 63 mentioned later, and the area | region of other than that.

  As shown in FIG. 8D, the airflow control plate 63 having a rectangular flat plate shape is moved above the wafer W by rotating the airflow control plate 63 by the drive unit 64 (FIG. 6). It is arranged at a predetermined position away from the axis RA so as to be substantially parallel to the wafer W. The film thickness of the resist solution PR can be increased in the vicinity of the wafer center side edge PE of the airflow control plate 63 by locally changing the airflow above the rotating wafer W by the airflow control plate 63. . Further, the position of the airflow control plate 63 is such that the wafer center side end PE of the airflow control plate 63 is disposed at an arbitrary position between the position on the center C1 of the wafer W and the position on the outer edge E1. Adjustment is possible. Therefore, the film thickness at an arbitrary position of the wafer W can be controlled, and the film thickness variation in the surface of the wafer W can be reduced.

  In the sixth step S6, after the fifth step S5, the wafer W is rotated at a fifth rotation speed V5 higher than the fourth rotation speed V4, and the resist solution PR on the wafer W is shaken off and dried. It is. The fifth rotation speed V5 may be equal to the third rotation speed V3. Specifically, as shown in S5 of FIG. 7, the wafer W is accelerated to a rotational speed of 1000 to 4000 rpm, more preferably 1800 rpm (equal to the third rotational speed V3), for example, for 30 seconds while rotating. The resist solution PR is shaken off and dried.

  Next, it will be described in comparison with the comparative example that in the fifth step S5, the film thickness at an arbitrary position of the wafer W can be controlled and the film thickness variation in the surface of the wafer W can be reduced.

  FIG. 9 shows the resist film thickness distribution (Example 1) obtained by the resist coating process according to the present embodiment, and the resist film film obtained by the resist coating process without using the airflow control plate 63. It is a graph typically shown compared with thickness distribution (comparative example 1).

  As shown in FIG. 9, when the wafer rotation speed is low or the wafer temperature is low, a convex film thickness distribution in which the film thickness in the central part is thicker than the outer peripheral part may be shown. Further, when the rotation speed of the wafer is high or the wafer temperature is high, a concave film thickness distribution in which the film thickness of the outer peripheral part is thicker than the central part may be shown. When the airflow control plate 63 is not used (Comparative Example 1), even when the wafer rotation speed and the wafer temperature are adjusted so that the film thickness distribution in the wafer surface is as uniform as possible, The film thickness in the intermediate part between the outer peripheral parts may be thinner than the film thickness in the central part and outer peripheral part of the wafer.

  On the other hand, when the airflow control plate 63 is arranged so that the wafer center side end PE of the airflow control plate 63 is located between the position on the center C1 of the wafer W and the position on the outer edge E1 (Example 1). Can preferentially increase the film thickness in the vicinity of the wafer center side edge PE of the airflow control plate 63. As a result, the film thickness can be made equal in any of the central part, the intermediate part, and the outer peripheral part of the wafer W, and the film thickness in the plane of the wafer W can be made uniform.

  FIG. 10 is a graph showing the measured values of the film thickness distribution of the resist films obtained by performing Example 1 and Comparative Example 1 under the conditions that the wafer temperature is 23 ° C. and the rotation speed in the fifth step S5 is 100 rpm. It is.

  In the comparative example 1 of FIG. 10, in the central portion that is a region near the center of the wafer W (distance Y = 0 mm from the wafer center) and the outer peripheral portion that is a region near the outer edge (Y = −150 mm, 150 mm) of the wafer W. The film thickness is approximately equal to 102 nm. However, in the intermediate portion which is a region between the center and the outer edge of the wafer W (−80 mm <Y <−40 mm, 40 mm <Y <80 mm), the film thickness is close to 101 nm, which is about 1 nm compared to the central portion and the outer peripheral portion. Thin film thickness. At this time, the average value of the film thickness was 101.5 nm, and the film thickness variation 3σ was 1.12 nm.

  On the other hand, in Example 1 of FIG. 10, the film thickness is substantially equal to 102 nm in any of the central portion, the outer peripheral portion, and the intermediate portion of the wafer W. At this time, the average value of the film thickness was 101.9 nm, and the film thickness variation 3σ was 0.66 nm.

  Therefore, also in the actual measurement values shown in FIG. 10, the film thickness can be made equal in any of the central portion, the intermediate portion, and the outer peripheral portion of the wafer W by using the airflow control plate 63 as in FIG. It is understood that the film thickness in the plane of the wafer W can be made uniform.

  Next, it will be described that the thickness of the resist film can be freely controlled by adjusting the size and position of the airflow control plate 63.

  FIG. 11A and FIG. 11B are a plan view and a side view schematically showing the positional relationship between the airflow control plate 63 and the wafer W, respectively.

  As shown in FIGS. 11A and 11B, the length dimension in the X direction of the airflow control plate 63 is LX. The width dimension in the Y direction of the airflow control plate 63 is WY1. Further, the distance between the wafer outer peripheral side edge PE2 along the Y direction of the airflow control plate 63 and the outer edge E1 is WY2, and the wafer center side edge PE along the Y direction of the airflow control plate 63 and the outer edge E1 of the wafer W are set. Is the distance WY3. Further, the thickness dimension in the Z direction of the airflow control plate 63 is HZ1, and the height dimension in the Z direction from the surface of the wafer W on the lower surface of the airflow control plate 63 is HZ2.

  FIG. 12 shows a resist film when the air flow control plate 63 is used and when the air flow control plate 63 is not used, as shown in FIG. 9, when the length dimension LX in the X direction of the air flow control plate 63 is changed. It is a graph which shows the result of having measured the largest film thickness difference (DELTA) Max from which the difference in film thickness becomes the largest along a radial direction. At this time, WY1 is set to a predetermined value of 50 mm, and WY2 is set to a predetermined value of 0 mm.

  As shown in FIG. 12, ΔMax also increases as LX increases. That is, when the airflow control plate 63 becomes longer in the direction orthogonal to the radial direction, the adjustment amount by which the film thickness can be adjusted by the airflow control plate 63 increases. Thus, the film thickness of the resist film can be freely adjusted by adjusting the length of the airflow control plate 63 in the direction orthogonal to the radial direction.

  FIG. 13 shows the resist film when the airflow control plate 63 is used and when the airflow control plate 63 is not used, as shown in FIG. 9, when the width dimension WY1 in the Y direction of the airflow control plate 63 is changed. It is a graph which shows the result of having measured the largest film thickness difference (DELTA) Max from which the difference in film thickness becomes the maximum along a radial direction. At this time, LX is set to a predetermined value 223 mm, and WY3 is set to a predetermined value 90 mm.

  As shown in FIG. 13, ΔMax also increases as WY1 increases. That is, when the airflow control plate 63 becomes wider in the radial direction, the adjustment amount by which the film thickness can be adjusted by the airflow control plate 63 increases. Thus, the film thickness of the resist film can be freely adjusted by adjusting the radial width of the airflow control plate 63.

  Here, the effect that the film thickness of the resist film is controlled by adjusting the size and position of the airflow control plate 63 will be described.

  FIG. 14 is a cross-sectional view schematically showing the airflow and film thickness distribution around the airflow control plate 63 and the wafer W.

  In the region on the surface of the wafer W where the airflow control plate 63 is disposed above the wafer W, diffusion of the solvent volatilized from the resist solution is suppressed and the volatilization rate of the solvent is reduced. A decrease in the concentration of the solvent is suppressed. In particular, in the vicinity of the wafer outer peripheral end PE2 of the airflow control plate 63, the concentration gradient of the solvent in the height direction (Z direction) becomes small, and the volatilization rate of the solvent from the resist solution decreases. As a result, the concentration of the solute (resist) in the resist solution hardly increases and the viscosity of the resist solution is kept relatively small in the region covered with the airflow control plate 63 and the region on the outer peripheral side.

  On the other hand, in the region above the surface of the wafer W and below the wafer center side end PE of the air flow control plate 63, an air flow GF that is obliquely downward is generated from the upper center side toward the lower side of the air flow control plate 63. The thickness of the concentration boundary layer where the concentration of the solvent is equal to or higher than the predetermined concentration is thinner than the region on the outer peripheral side. Along with this, the concentration gradient of the solvent in the height direction (Z direction) increases, and the volatilization rate of the solvent increases. As a result, in the region below the wafer center side end PE of the airflow control plate 63, the concentration of the solute (resist) in the resist solution increases and the viscosity of the resist solution increases.

  As a result, in the region from the wafer center side edge PE of the airflow control plate 63 to the wafer center side, the viscosity of the resist solution is higher on the airflow control plate 63 side than on the wafer center side, and the airflow control plate from the wafer center side. Since the flow of the resist solution flowing toward 63 is obstructed, the film thickness increases from the wafer center side toward the airflow control plate 63 side. Further, in the region from the wafer center side end PE of the airflow control plate 63 to the wafer outer peripheral side, the viscosity of the resist solution is higher on the wafer center side end PE side of the airflow control plate 63 than on the wafer outer peripheral side. Since the inflow amount of the resist solution to the outer peripheral side decreases, the film thickness decreases from the wafer center side toward the wafer outer peripheral side. As a result, the film thickness distribution of the resist film along the radial direction has a peak below the wafer center side edge PE of the airflow control plate 63 compared to the resist film thickness distribution when the airflow control plate 63 is not used. It is thought that it changes to have.

  Further, the position (peak position) at which the difference in film thickness between when the airflow control plate 63 is used and when it is not used is determined corresponding to the position of the wafer center side end PE of the airflow control plate 63. Therefore, the peak position can be controlled by changing the position of the wafer center side end PE of the airflow control plate 63 (WY3 in FIGS. 11A and 11B).

  As described above, the fourth rotational speed V4 is preferably 50 to 100 rpm. This is because when the fourth rotational speed V4 exceeds 100 rpm, the rotational speed becomes high, so that the airflow generated by the rotation becomes dominant and the effect of the airflow control plate is difficult to be obtained. In addition, when the fourth rotational speed V4 is less than 50 rpm, the airflow easily enters the lower part of the airflow control plate 63. On the contrary, an obliquely downward airflow is generated from the upper center side toward the lower part of the airflow control plate 63. This is because it becomes difficult.

  Further, the influence of the height of the airflow control plate 63 from the surface of the wafer W is considered as follows.

  FIG. 15 shows the airflow control plate 63 around the airflow control plate 63 and the wafer W when the height from the surface of the wafer W (HZ2 in FIG. 11B) is lower than the height in FIG. It is sectional drawing which shows airflow and film thickness distribution typically.

  When the height HZ2 is reduced, in the region located on the wafer surface and below the wafer center side end portion PE of the airflow control plate 63, the diagonally downward direction generated from the upper side in the radial direction toward the lower side of the airflow control plate 63. The air flow becomes larger and the concentration boundary layer becomes thinner. However, the length along the radial direction of the region where the thickness of the concentration boundary layer is reduced along the radial direction is shorter than that when the height HZ2 is high. That is, the density boundary layer becomes thinner to a relatively large degree, but the range in which the density boundary layer becomes thinner becomes narrower. For example, when the height of the airflow control plate 63 is lowered, the position (peak position) where the difference in film thickness between the case where the airflow control plate 63 is used and the case where the airflow control plate 63 is not used is not significantly changed, but the peak range (peak width) ) Becomes narrower and the amount of change in film thickness at the peak position becomes larger. That is, when the height of the airflow control plate 63 from the wafer surface is reduced, the region in which the film thickness changes changes, but the amount of change in the film thickness near the peak increases. Conversely, when the height of the airflow control plate 63 from the wafer surface is increased, the region in which the film thickness changes increases, but the amount of change in film thickness near the peak decreases.

  Thus, the film thickness of the resist film can be freely adjusted by adjusting the height of the airflow control plate 63 from the surface of the wafer W.

  In the present embodiment, the example in which the airflow control plate 63 is moved by the drive unit 64 has been described. However, a plurality of types of airflow control plates having different dimensions may be provided in advance, and the airflow control plates may be properly used according to the film thickness distribution before control. For example, an airflow control plate having a radial width dimension WY1 of, for example, 60 mm, 20 mm, and 10 mm width is provided, and a preliminary experiment is performed without using the airflow control plate, for example, and the film thickness distribution obtained from this preliminary experiment is determined. An airflow control plate may be selected.

  Further, the amount of change by which the film thickness of the resist film is changed by the airflow control plate 63 depends on the time for performing the fifth step S5. Therefore, you may make it select the time which performs 5th process S5 from the setting time of three steps, for example, 3 seconds, 4 seconds, and 5 seconds.

(Second Embodiment)
Next, a coating treatment method according to the second embodiment of the present invention will be described.
The coating treatment method according to the present embodiment is different from the coating treatment method according to the first embodiment in that there is no fifth step S5. In addition, the coating treatment method according to the present embodiment can be performed using the coating module described in the first embodiment.

  FIG. 16 is a graph showing the rotation speed of the wafer in each step of the coating treatment method according to the present embodiment.

  The transfer of the wafer W into the coating module 23 by the transfer arm A3, the pre-wet processing step S0, and the first step S1 are the same as the pre-wet processing step S0 and the first step S1 in the first embodiment. be able to. Further, the state of the wafer W when the first step S1 is performed is the same as the state shown in FIG.

  Next, the second step shown in S2 of FIG. 16 is performed. The second step S2 is a step of adjusting the shape of the diffused resist solution PR by rotating the wafer W at a second rotation speed V2 lower than the first rotation speed V1 after the first step S1. The time for performing the second step S2 at the second rotational speed V2 can be the same as in the first embodiment.

  However, in the present embodiment, the air flow above the rotating wafer W may be locally changed by disposing the air flow control plate 63 above the wafer W in the second step S2.

  As shown in FIG. 8B in the first embodiment, in the first step S1, for example, the outer periphery of the resist solution that has reached only half the distance from the center of the wafer W to the outer periphery. Are in substantially the same position in the second step S2 as in the first step S1.

  However, by disposing the airflow control plate 63 above the wafer W in the second step S2, the film thickness of the resist solution can be increased in the vicinity of the wafer center end PE of the airflow control plate 63. The position of the airflow control plate 63 can be arranged at an arbitrary position. Therefore, in the second step S2, the film thickness distribution of the resist solution can be controlled.

  Next, the third step shown in S3 of FIG. 16 is performed. In the third step S3, after the second step S2, the wafer W is rotated at a third rotational speed V3 that is higher than the second rotational speed V2, and the resist solution PR whose shape is adjusted is changed to the diameter of the wafer W. In this step, the resist solution PR on the wafer W is sprinkled off and dried. The third rotation speed V3 can be the same as that in the first embodiment. The time for performing the third step S3 is preferably about 25 seconds, for example.

  Also in the third step S3, the airflow control plate 63 may be disposed above the wafer W following the second step S2.

  In the present embodiment, the distribution of the film thickness of the resist solution can be controlled in advance in the second step S2. Therefore, regarding the resist film formed by performing the third step S3, the film thickness at an arbitrary position of the wafer W can be controlled, and the film thickness variation in the surface of the wafer W can be reduced.

  In the present embodiment, the example in which the airflow control plate 63 is disposed above the wafer W in the second step S2 has been described. However, the airflow control plate 63 may be above the wafer W from the time of the first step S1, and may be fixed at a predetermined position. That is, while supplying the resist solution to the wafer W, the air flow above the rotating wafer W is generated by the air flow control plate 63 provided at a predetermined position while the wafer W is rotated by the chuck drive mechanism 32. It may be changed locally.

In the present embodiment, the airflow control plate is rectangular, but may be other shapes such as a round shape in plan view as will be described later.
(Third embodiment)
Next, a coating module according to a third embodiment of the present invention will be described with reference to FIG. This coating module is different from the coating module 23 in that the airflow control plate 63 in the coating module 23 (FIGS. 5 and 6) according to the first embodiment is driven not by the drive unit 64 but by another drive mechanism. However, the other points are almost the same. Hereinafter, the coating module according to the present embodiment will be described focusing on the differences.

  FIG. 17 is a schematic perspective view showing the airflow control plate 63 and the drive unit 630 that drives the airflow control plate 63 in the coating module according to the present embodiment. As shown in FIG. 17, the airflow control plate 63 is held by the fourth arm 610. The fourth arm 610 includes a link portion 63L and a support rod 63a, which are coupled to each other at an angle of about 90 °. For this reason, when viewed from the X-axis direction, the fourth arm 610 (the link portion 63L and the support rod 63a) has a substantially L-shape. For this reason, when the longitudinal direction of the link portion 63L coincides with the horizontal direction, the support rod 63a extends substantially in the vertical direction, and the airflow control plate 63 attached to the support rod 63a is substantially upright. However, the angle formed by the link portion 63L and the support rod 63a is not limited to about 90 °, and may be adjusted as appropriate.

  The drive portion 630 includes a base portion 63b that can move along the rail 40 extending in the Y-axis direction, a guide portion 63v that stands on the base portion 63b, and a guide portion 63v that can move up and down along the guide portion 63v. And a motor 63m provided for the motor. A rotation shaft (not shown) of the motor 63m is coupled to one end side of the link portion 63L of the fourth arm 610. Thereby, the link part 63L can be rotated around the rotating shaft of the motor 63m by the motor 63m. Along with the rotation of the link portion 63L, the support rod 63a and the airflow control plate 63 also rotate around the rotation shaft of the motor 63m.

  Next, the operation of the airflow control plate 63 by the drive unit 630 will be described with reference to FIG. This operation is performed in the fifth step S5 of the coating treatment method according to the first embodiment described with reference to FIG.

  As shown in FIG. 18A, the airflow control plate 63 is first disposed at a standby position at least laterally away from the wafer W held by the spin chuck 31 in the cup 33 by the driving unit 630. Has been. In the present embodiment, the air flow control plate 63 stands upright at the standby position. The standby position is such that the airflow above the wafer W is not disturbed by the airflow control plate 63 in the steps S1, S2, and S4 described in the first embodiment with reference to FIGS. It is preferable that they are separated. However, if the separation distance between the airflow control plate 63 and the cup 33 is increased unnecessarily, the coating module will be increased in size, so the separation distance is determined in consideration of the space where the coating module is provided. It is preferable.

  Next, as shown in FIG. 18B, when the motor 63m of the drive unit 630 moves up to a predetermined position along the guide unit 63v, the fourth arm 610 (the link unit 63L and the support rod 63a) is moved. , Is arranged at a position higher than the standby position. Next, as shown in FIG. 18 (c), the motor 63m is activated and rotates its rotating shaft, whereby the fourth arm 610 (the link portion 63L and the support rod 63a) rotates clockwise, A control plate 63 is disposed substantially horizontally above the wafer W. Further, as shown in FIG. 18D, the airflow control plate 63 moves along the radial direction of the wafer W by the drive unit 630 (base portion 63 b) moving along the rail 40 so as to approach the cup 33. Moved to be placed at a predetermined position.

  Here, the height of the airflow control plate 63 from the surface of the wafer W (see HZ2 in FIG. 11B) can be adjusted by the ascent distance that the motor 63m rises along the guide portion 63v. Further, the position of the airflow control plate 63 in the horizontal direction (Y-axis direction) can be adjusted by the moving distance that the base portion 63 b moves along the rail 40.

  Moreover, after completion | finish of the above-mentioned 5th process S5, the airflow control board 63 can return to a standby position according to the order contrary to the above.

  Effects similar to those described in the first embodiment are exhibited by the airflow control plate 63 arranged at a predetermined position as described above. In the coating module according to the present embodiment, the airflow control plate 63 is held by the fourth arm 610, and the fourth arm 610 is coupled to each other at an angle of about 90 ° and the link portion 63L. It is comprised by the support rod 63a. If there is no link portion 63L and the support rod 63a is directly attached to the motor 63m, the distance by which the motor 63m (and the support rod 63a and the airflow control plate 63) rises along the guide portion 63v is increased. Need to do. That is, when there is no link part 63L, for example, if the motor 63m does not move to the same height as the link part 63L shown in FIG. 18C, the airflow control plate 63 is arranged at a predetermined height (HZ2). Can not do it. For this reason, the airflow control plate 63 must be raised to a higher position by the motor 63m than when the link portion 63L is present, and thus the casing 30 (FIG. 5) of the coating module 23 needs to be raised. That is, the application module 23 can be reduced in size by the link part 63L.

  While the example in which the airflow control plate 63 sequentially rises, rotates, and moves in the horizontal direction has been described with reference to FIG. 18, the present invention is not limited to this example. For example, as shown in FIG. 19. Ascending, rotating, and horizontally moving may be performed simultaneously. That is, in the example shown in FIG. 19, starting from the standby position shown in FIG. 19A, as shown in FIGS. 19B to 19D, the motor 63m rises along the guide portion 63v. As the rotating shaft of the motor 63m rotates, the fourth arm 610 and the airflow control plate 63 rotate clockwise, while the base portion 63b moves in the horizontal direction along the rail 40, whereby the airflow control plate. 63 may be arranged at a predetermined position.

  In the example shown in FIG. 18, the order of ascending and horizontal movement may be changed. That is, after the base portion 63b moves to the right along the rail 40 and stops at a predetermined position, the motor 63m, the fourth arm 610, and the airflow control plate 63 are raised, and the fourth arm 610 and The airflow control plate 63 may be rotated.

  In addition, the drive unit 630 includes a base portion 63b that can move along the rail 40 (see FIG. 6) extending in the Y-axis direction, a guide portion 63v that stands on the base portion 63b, and a guide portion 63v. The motor 63m may be configured to be fixed at a predetermined height position. According to this, the airflow control plate 63 can be disposed at a predetermined position by rotating the motor 63m and moving the base portion 63b in the horizontal direction without raising the motor 63m. In addition, there is an advantage that a drive unit that moves the motor 63m up and down is unnecessary.

  The drive unit 630 includes a base part 63b fixed at a predetermined position of the rail 40 (see FIG. 6) extending in the Y-axis direction, a guide part 63v erected on the base part 63b, and a guide part 63v. It may be configured by a motor 63m provided for the guide portion 63v so that it can move up and down along. According to this, the airflow control plate 63 can be disposed at a predetermined position by the vertical movement along the guide portion 63v of the motor 63m and the rotation by the motor 63m. Therefore, there is an advantage that a driving unit for moving the motor 63m in the horizontal direction is not necessary.

  Furthermore, the drive unit 630 includes a base part 63b fixed at a predetermined position of the rail 40 (see FIG. 6) extending in the Y-axis direction, a guide part 63v erected on the base part 63b, and a guide part 63v. The motor 63m may be configured to be fixed at a predetermined height position along. According to this, the airflow control plate 63 can be disposed at a predetermined position only by the rotation by the motor 63m.

(Modification)
The application modules according to the first embodiment and the third embodiment have been described above, but the airflow control plate 63 in these application modules can be modified as follows.

  For example, the airflow control plate 63 may not have a rectangular flat plate shape, but may have a flat plate shape (or an arc shape or a semicircular flat plate shape) curved in a C shape as shown in FIG. Even in such a shape, the resist film is passed through the solvent concentration in the resist solution in the region below the airflow control plate 63 in the space above the wafer W and the region where the airflow control plate 63 is not disposed. The thickness distribution can be controlled. The airflow control plate 63 is not limited to the C shape, and may have a trapezoidal shape, a triangular shape, or the like.

  Further, as shown in FIG. 20B, the lower surface of the airflow control plate 63 is not flat, and the interval between the lower surface and the surface of the wafer W held by the spin chuck 31 may be changed. In the illustrated example, the lower surface of the airflow control plate 63 is curved along the direction from the center of the wafer W toward the outer periphery so that the interval is narrowed and widened again. According to such a lower surface shape, since the velocity of the airflow in the space can be increased on the outer peripheral side of the wafer W in the space between the lower surface of the airflow control plate 63 and the surface of the wafer W, the volatilization of the solvent The amount increases, and the resist film can be thickened on the outer peripheral side of the wafer W. Note that the lower surface of the airflow control plate 63 is not limited to have a curved surface, and the interval between the lower surface and the surface of the wafer W may be changed by having a plurality of inclined planes, for example.

  Furthermore, as shown in FIG. 20C, the airflow control plate 63 may be inclined with respect to the surface of the wafer W instead of being parallel to the wafer W. Such an inclination may be realized by attaching the airflow control plate 63 to the third arm 61 at a predetermined angle in the first embodiment, and the rotation of the motor 63m in the third embodiment. You may implement | achieve by adjusting the rotation angle of a shaft.

  When the distance between the lower surface of the airflow control plate 63 and the surface of the wafer W increases along the direction toward the outer periphery of the wafer W as shown in FIG. Similarly, the amount of solvent volatilization on the outer peripheral side of the wafer W can be increased, and thus the resist film on the outer peripheral side of the wafer W can be made thicker. Further, the airflow control plate 63 may be inclined so that the distance between the lower surface of the airflow control plate 63 and the surface of the wafer W becomes narrower along the direction toward the outer periphery of the wafer W. According to this, the volatilization amount of the solvent on the inner peripheral side of the wafer W can be increased, and thus the resist film on the inner peripheral side of the wafer W can be increased.

  For example, as shown in FIG. 21A, an additional airflow control plate 163 may be provided in addition to the airflow control plate 63. Specifically, the airflow control plate 163 has substantially the same size as the airflow control plate 63 and is provided away from the airflow control plate 63 on the outer peripheral side of the wafer. More specifically, the airflow control plate 63 is not limited to this. For example, the airflow control plate 163 is provided at an arbitrary position above the position of 20 mm from the outer periphery of the wafer to the position of 20 mm on the inner side and the position of 20 mm on the outer side. And preferred. According to the airflow control plate 163 arranged in this way, it is possible to adjust the film thickness of the resist film at the outermost peripheral portion of the wafer.

  Further, as shown in FIG. 21B, an airflow control plate 63 and an additional airflow control plate 164 that have a rectangular flat plate shape and are arranged symmetrically with respect to the center of the wafer W may be provided. Furthermore, as shown in FIG. 21 (c), in addition to the airflow control plate 63 having a rectangular flat plate shape, the airflow control having a flat plate shape (or arc shape or semicircular flat plate shape) curved in a C shape. A plate 165 may be added.

  The airflow control plates 163 to 165 may be provided integrally with the airflow control plate 63 and may be operated integrally with the airflow control plate 63, or the driving unit 61 (or the airflow control plate 63 provided). 610) may be provided separately and operated separately from the airflow control plate 63. When the airflow control plates 163 to 165 are separately provided with a drive unit, the airflow control plates 163 to 165 are arranged at a predetermined position above the wafer W before the airflow control plate 63 is arranged at a predetermined position, for example. Alternatively, after the airflow control plate 63 is disposed at a predetermined position, it may be disposed at a predetermined position above the wafer W. For example, by arranging the airflow control plate 63 at a predetermined position, the film thickness distribution of the resist film in the region from the wafer center side to the outside of the wafer outer peripheral side end PE2 of the airflow control plate 63 is adjusted, and then the airflow control plate By disposing 163 or 165 at a predetermined position, it is possible to adjust the film thickness distribution of the resist film in the outermost peripheral portion of the wafer.

  Further, the airflow control plates 163 to 165 may be arranged at the same height as the height of the airflow control plate 63 from the wafer surface, or may be arranged at different heights. Further, as described for the airflow control plate 63 with reference to FIG. 20B, the distance between the lower surfaces of the airflow control plates 163 to 165 and the surface of the wafer W may be changed. Furthermore, as described for the airflow control plate 63 with reference to FIG. 20C, the airflow control plates 163 to 165 are inclined with respect to the surface of the wafer W, so that the lower surfaces of the airflow control plates 163 to 165 and the wafer The space | interval with the surface of W may change. In addition, the shape of the airflow control plates 163 to 165 is preferably determined based on, for example, the film thickness distribution of the resist film obtained by a preliminary experiment.

Next, the improvement results of the film thickness uniformity by the airflow control plates 63 and 163 shown in FIG.
FIG. 22A is a graph showing the in-wafer thickness distribution of a resist film when a resist film is formed on a wafer having a diameter of 300 mm using a resist solution having a solid component (resist) concentration of 4.0%. It is. The horizontal axis indicates the position along the diameter direction of the wafer, and the vertical axis indicates the film thickness. The dotted line in the graph shows the film thickness distribution of the resist film formed without using the airflow control plate 63 or the airflow control plate 163 for comparison, and the solid line shows the resist film formed using the airflow control plates 63 and 163. The film thickness distribution is shown. The amount of the resist solution supplied to the wafer surface was 0.34 milliliter (ml).

  As can be seen from this graph, when neither the airflow control plate 63 nor the airflow control plate 163 is used, the film thickness of the resist film decreases in the direction from the wafer center (0 mm) toward the outer periphery, and from the wafer center. After becoming the thinnest at a position of about 60 to 70 mm, it increases toward the outer periphery of the wafer. On the other hand, when the airflow control plates 63 and 163 are used, the film thickness increases at a position of about 60 to 70 mm from the center of the wafer, and the film is positioned at a position close to the outer periphery of the wafer (position of 125 to 140 mm). The thickness is decreasing. As a result, the film thickness uniformity is 1.22 nm (maximum film thickness-minimum film thickness) when neither the airflow control plate 63 nor the airflow control plate 163 is used, and when the airflow control plates 63 and 163 are used. It is improved to 0.62 nm.

  When the airflow control plates 63 and 163 are used, the film thickness increases at a position of about 60 to 70 mm from the center of the wafer by the airflow control plate 63, and the film thickness increases at a position near the outer periphery of the wafer by the airflow control plate 163. It can be thought that it decreased.

  FIG. 22B shows the in-plane film thickness distribution of the resist film when a resist film is formed on a wafer having a diameter of 300 mm using a resist solution having a solid component (resist) concentration of 3.5%. It is a graph shown similarly to 22 (a). The amount of resist solution supplied to the wafer surface was 0.33 milliliter (ml).

  In the results shown in FIG. 22B, the film thickness of the resist film increases at a position from about 110 to 135 mm from the center of the wafer, whether or not the airflow control plates 63 and 163 are used. However, in the range from the center of the wafer to about 75 mm, it can be seen that the use of the airflow control plates 63 and 163 can increase the film thickness and improve the film thickness uniformity. Further, in the position from about 110 to 135 mm from the center of the wafer, unlike the result shown in FIG. 22A, the film thickness is not decreased by the air flow control plate 163, but at least a significant increase is recognized. Absent. If the air flow control plate 165 shown in FIG. 21C is used instead of the air flow control plate 163, the air flow can be controlled over a wider range at a position from the center of the wafer to about 110 to 135 mm, which improves the film thickness distribution. Be expected.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

  For example, the standby position of the airflow control plate 63 is the same height as a predetermined position above the wafer W held by the spin chuck 31 as long as it is laterally separated from the wafer W held by the spin chuck 31. (The first embodiment) may be higher or lower than the height. The standby position may be the same height as the cup 33 (or the upper surface of the wafer W held by the spin chuck 31) or may be low. Such a position can be realized by the drive unit 630 in the third embodiment, and can also be realized by providing an elevating mechanism for the drive unit 64 in the first embodiment. In the standby position, the airflow control plate 63 is not limited to be arranged horizontally (first embodiment) or vertically (third embodiment), but is inclined at a predetermined angle with respect to the horizontal direction. It's okay.

  In the above embodiment, a semiconductor wafer is used as a substrate to be processed. However, the present invention is not limited to this, and the present invention can also be applied to other substrates, for example, glass substrates for flat panel displays.

23 coating module 31 spin chuck 32 chuck drive mechanism 43 resist solution nozzle 63 air flow control plates 64 and 630 drive unit 70 control unit

Claims (3)

  1. In the coating treatment method of applying the coating liquid to the surface of the substrate by supplying the coating liquid to the surface of the rotating substrate and diffusing the supplied coating liquid to the outer peripheral side of the substrate,
    A first step of supplying a coating liquid to the surface of the substrate in a state where the substrate is rotated at a first rotation speed;
    After the first step, the supply of the coating liquid is stopped when the substrate is decelerated to a second rotation speed lower than the first rotation speed or rotated at the second rotation speed. A second step;
    A third step of rotating the substrate at a third rotational speed higher than the second rotational speed after the second step;
    After the supply of the coating liquid to the surface of the substrate is stopped, an airflow control plate provided so as to be movable to a predetermined position above the substrate in a state where the substrate is rotating is moved by the driving unit to the predetermined position. A coating treatment method in which the airflow above the rotating substrate is locally changed by moving the substrate.
  2. The third step includes
    A fourth step of rotating the substrate at the third rotational speed;
    And after the fourth step, a fifth step of rotating the substrate at a fourth rotational speed lower than the third rotational speed,
    In the fifth step, the airflow control plate is arranged at the predetermined position by the drive unit while rotating the substrate at the fourth rotation speed, so that an airflow above the rotating substrate is generated. The coating treatment method according to claim 1, wherein the coating treatment method is locally changed.
  3.   A computer-readable recording medium on which a program for causing a computer to execute the coating treatment method according to claim 1 or 2 is recorded.
JP2014236643A 2011-04-26 2014-11-21 Coating processing method, and recording medium having program for executing coating processing method recorded therein Pending JP2015097268A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283331A (en) * 1992-02-04 1993-10-29 Sony Corp Resist coating device and method for spin-coating with resist
JPH11144330A (en) * 1997-11-06 1999-05-28 Ricoh Co Ltd Optical master disk and method and device for coating photoresist
JP2004273846A (en) * 2003-03-10 2004-09-30 Tokyo Electron Ltd Device and method for liquid treatment
JP2005196906A (en) * 2004-01-09 2005-07-21 Canon Inc Coating film forming apparatus and coating film manufacturing method
JP2010212658A (en) * 2009-02-13 2010-09-24 Tokyo Electron Ltd Coating method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283331A (en) * 1992-02-04 1993-10-29 Sony Corp Resist coating device and method for spin-coating with resist
JPH11144330A (en) * 1997-11-06 1999-05-28 Ricoh Co Ltd Optical master disk and method and device for coating photoresist
JP2004273846A (en) * 2003-03-10 2004-09-30 Tokyo Electron Ltd Device and method for liquid treatment
JP2005196906A (en) * 2004-01-09 2005-07-21 Canon Inc Coating film forming apparatus and coating film manufacturing method
JP2010212658A (en) * 2009-02-13 2010-09-24 Tokyo Electron Ltd Coating method

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