WO2018133134A1 - Coa基板及液晶显示面板 - Google Patents

Coa基板及液晶显示面板 Download PDF

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Publication number
WO2018133134A1
WO2018133134A1 PCT/CN2017/073331 CN2017073331W WO2018133134A1 WO 2018133134 A1 WO2018133134 A1 WO 2018133134A1 CN 2017073331 W CN2017073331 W CN 2017073331W WO 2018133134 A1 WO2018133134 A1 WO 2018133134A1
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WO
WIPO (PCT)
Prior art keywords
common electrode
layer
line
jumper
scan line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/073331
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English (en)
French (fr)
Inventor
甘启明
王勐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/514,181 priority Critical patent/US20180341159A1/en
Publication of WO2018133134A1 publication Critical patent/WO2018133134A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a COA substrate and a liquid crystal display panel having the same.
  • LCD Liquid Crystal Display
  • OLED organic electroluminescent device
  • the scanning line of the pixel will increase accordingly.
  • the charging time of the pixel will become shorter and shorter.
  • the RC of the data line can be reduced.
  • Delay signal delay
  • the signal delay is mainly affected by the parasitic capacitance of the data line; the current plane conversion (In-Plane) Switching, referred to as IPS) type LCD screen, mostly adopts COA technology.
  • the parasitic capacitance value at the intersection of the gate line and the data line is higher, the signal delay is increased, and the effective charging time of the pixel is reduced, thereby affecting the display effect of the liquid crystal display panel.
  • the invention provides a COA substrate, which can reduce the parasitic capacitance value between the data line and the scan line, so as to solve the existing COA liquid crystal display panel, the parasitic capacitance value at the intersection of the gate line and the data line is high, and the signal delay is increased, and the pixel is added.
  • the technical problem of the effective charging time is reduced, which in turn affects the display effect of the liquid crystal display panel.
  • the invention provides a COA substrate, comprising:
  • a thin film transistor arranged in an array, comprising a gate, a source and a drain;
  • a data line connected to a source of the thin film transistor for inputting a display data signal to the pixel unit
  • a scan line perpendicularly intersecting the data line to define the pixel unit, the scan line being connected to a gate of the thin film transistor for controlling opening and closing of the gate of the thin film transistor;
  • a common electrode connected to the common electrode connection line through a first via, the common electrode connection line being disposed in the same layer as the scan line, the common electrode connection line being parallel and immediately adjacent to the scan line of the previous pixel unit;
  • a pixel electrode connected to the drain of the thin film transistor and disposed in the same layer as the common electrode to form a horizontal electric field to drive liquid crystal molecules to rotate;
  • the jumper electrode material is selected to be a molybdenum-titanium alloy.
  • the common electrode and the pixel electrode material are selected from a molybdenum-titanium alloy.
  • the layered structure of the lower substrate includes: a glass substrate, and a gate metal layer, a gate insulating layer, an amorphous silicon layer, and a source and drain layer which are sequentially laminated on the glass substrate.
  • a metal layer, a passivation layer, a color photoresist layer, and a resin layer, the common electrode, the pixel electrode, and the jumper are on the resin layer, and the second via hole penetrates from the resin layer to the source Drain metal layer.
  • the common electrode and the common electrode are comb-shaped electrodes, and the two are alternately arranged.
  • the invention also provides a COA substrate comprising:
  • a thin film transistor arranged in an array, comprising a gate, a source and a drain;
  • a data line connected to a source of the thin film transistor for inputting a display data signal to the pixel unit
  • a scan line perpendicularly intersecting the data line to define the pixel unit, the scan line being connected to a gate of the thin film transistor for controlling opening and closing of the gate of the thin film transistor;
  • a common electrode connected to the common electrode connection line through a first via, the common electrode connection line being disposed in the same layer as the scan line, the common electrode connection line being parallel and immediately adjacent to the scan line of the previous pixel unit;
  • a pixel electrode connected to the drain of the thin film transistor and disposed in the same layer as the common electrode to form a horizontal electric field to drive liquid crystal molecules to rotate;
  • the jumper electrode material is selected to be a molybdenum-titanium alloy.
  • the common electrode and the pixel electrode material are selected from a molybdenum-titanium alloy.
  • the layered structure of the lower substrate includes: a glass substrate, and a gate metal layer, a gate insulating layer, an amorphous silicon layer, and a source and drain layer which are sequentially laminated on the glass substrate.
  • a metal layer, a passivation layer, a color photoresist layer, and a resin layer, the common electrode, the pixel electrode, and the jumper are on the resin layer, and the second via hole penetrates from the resin layer to the source Drain metal layer.
  • the common electrode and the common electrode are comb-shaped electrodes, and the two are alternately arranged.
  • a COA liquid crystal display panel comprising:
  • the lower substrate includes:
  • a thin film transistor arranged in an array, comprising a gate, a source and a drain;
  • a data line connected to a source of the thin film transistor for inputting a display data signal to the pixel unit
  • a scan line perpendicularly intersecting the data line to define the pixel unit, the scan line being connected to a gate of the thin film transistor for controlling opening and closing of the gate of the thin film transistor;
  • a common electrode connected to the common electrode connection line through a first via, the common electrode connection line being disposed in the same layer as the scan line, the common electrode connection line being parallel and immediately adjacent to the scan line of the previous pixel unit;
  • a pixel electrode connected to the drain of the thin film transistor and disposed in the same layer as the common electrode to form a horizontal electric field to drive liquid crystal molecules to rotate;
  • the jumper electrode material is selected to be a molybdenum-titanium alloy.
  • the common electrode and the pixel electrode material are selected from a molybdenum-titanium alloy.
  • the layered structure of the lower substrate includes: a glass substrate, and a gate metal layer, a gate insulating layer, an amorphous silicon layer, and a source and drain layer which are sequentially laminated on the glass substrate.
  • a metal layer, a passivation layer, a color photoresist layer, and a resin layer, the common electrode, the pixel electrode, and the jumper are on the resin layer, and the second via hole penetrates from the resin layer to the source Drain metal layer.
  • a portion of the data line intersecting the common electrode connection line forms a second gap, the second gap spans the common electrode connection line, and both ends of the second gap pass A second jumper connection is formed, and the second jumper is electrically connected to the data line through the third via.
  • the common electrode and the common electrode are comb-shaped electrodes, and the two are alternately arranged.
  • the invention has the beneficial effects that the COA substrate provided by the present invention forms a gap in a portion where the data line overlaps the scan line, the gap crosses the scan line, and a jumper is added on the upper side of the substrate to connect the gap of the data line, and the jumper
  • the thickness of the film layer of the scanning line is increased, thereby reducing the parasitic capacitance value of the overlapping portion, the signal delay is reduced, and the effective charging time of the pixel is increased, thereby improving the display effect of the liquid crystal display panel.
  • FIG. 1 is a schematic structural view of a pixel unit of a COA substrate according to the present invention.
  • FIG. 2 is a schematic structural view of another pixel unit of a COA substrate according to the present invention.
  • FIG. 3 is a schematic view showing the structure of a film layer of a COA substrate of the present invention.
  • the present invention is directed to the prior art COA substrate, where the parasitic capacitance value at the intersection of the gate line and the data line is high, the signal delay is increased, the effective charging time of the pixel is reduced, and the display effect of the liquid crystal display panel is affected. Can solve this defect.
  • FIG. 1 is a schematic structural view of a pixel unit of a COA substrate according to the present invention.
  • the figure includes a thin film transistor 101, a data line 102, a scan line 103, a common electrode 104, and a pixel electrode 105; the data line 102 intersects perpendicularly with the scan line 103 to define each pixel unit;
  • the transistor 101 includes a gate, a source and a drain, a gate of the thin film transistor 101 is connected to the scan line 103, a source of the thin film transistor 101 is connected to the data line 102, and a drain of the thin film transistor 101
  • the pixel electrode 105 is connected to the pole; each pixel unit is correspondingly provided with a common electrode 104, and the end of the common electrode 104 is connected to the common electrode connection line 106 through the first via 107, the common electrode connection line 106 and the
  • the scan line 103 is disposed in the same layer, and the common electrode connection line 106 is parallel and adjacent to the scan line 103 of the previous pixel unit; the common electrode 104 and the pixel electrode 105 are both comb electrodes,
  • the data line 102 is formed with a plurality of notches, the notches are distributed on the upper part of each scan line 103, and the notches are connected by a jumper 108, and the jumper 108 crosses the scan at both ends In line 103, both ends of the jumper 108 are electrically connected to the data line 102 through the second via 109.
  • the metal layer of the data line 102 is located at an upper portion of the metal layer where the scan line 103 is located, and the passivation layer and color are sequentially included above the metal layer on the data line 102.
  • a photoresist layer and a resin layer, the jumper wires 108 are formed on the resin layer located at the uppermost layer, and thus, the layer of the jumper 108 is located at a distance from the metal layer of the scan line 103 with respect to the metal layer where the data line 102 is located.
  • the layer thickness is larger, so that the distance between the data line 102 and the overlapping portion of the scan line 103 is increased, thereby reducing the parasitic capacitance between the data line 102 and the scan line 103, thereby reducing
  • the small signal signal is delayed, and the effective charging time of each pixel unit increases.
  • FIG. 2 is a schematic structural view of another pixel unit of a COA substrate of the present invention.
  • a thin film transistor 201 As shown in FIG. 2, a thin film transistor 201, a data line 202, a scan line 203, a common electrode 204, and a pixel electrode 205 are included; the data line 202 and the scan line 203 intersect perpendicularly to define each pixel unit; and the thin film transistor 201 A gate, a source and a drain are included, a gate of the thin film transistor 201 is connected to the scan line 203, a source of the thin film transistor 201 is connected to the data line 202, and a drain of the thin film transistor 201 is connected.
  • each pixel unit is correspondingly provided with a common electrode 204, and the end of the common electrode 204 is connected to the common electrode connection line 206 through the first via 207, the common electrode connection line 206 and the scan line 203 is disposed in the same layer, the common electrode connection line 206 is parallel and adjacent to the scan line 203 of the previous pixel unit; the common electrode 204 and the pixel electrode 205 are both comb electrodes, and the common electrode 204 and the pixel electrode 205 Alternate settings.
  • the data line 202 is formed with a plurality of notches, the notches are distributed on the upper portions of the scan lines 203 and the common electrode connection lines 206, and the gaps are connected by the jumper wires 208, wherein the
  • the jumper includes a first jumper 2081 across the scan line 203, and a second jumper 2082 across the common electrode connection 206, the first jumper 2081 being passed through the second via 209
  • the data line 202 is turned on, and the two ends of the second jumper 2082 are electrically connected to the data line 202 through the third via 210.
  • the portion of the data line 202 overlapping the common electrode connection line 206 is also connected by a jumper wire, and further the parasitic capacitance value between the data line 202 and the metal line on the substrate, thereby reducing signal signal delay, and liquid crystal display.
  • the panel has a better display.
  • FIG. 3 is a schematic view showing the structure of a film layer of a COA substrate of the present invention.
  • a glass substrate 301 is formed on which a first metal layer is formed, a gate of a thin film transistor and a scan line 302 are formed through a first mask, and the scan line 302 is connected to the film.
  • a gate electrode of the crystal then a gate insulating layer 303 is formed on the glass substrate 301, a second metal layer is formed on the gate insulating layer 303, and a source of the thin film transistor is formed through the second mask.
  • the data line 304 is connected to a source of the thin film transistor, and then a passivation layer 305 is formed on the glass substrate 301, and then A color photoresist layer 306 is formed on the passivation layer 305, and then a resin layer 307 is formed on the protective layer.
  • a second via 308 penetrating the resin layer 307 and the passivation layer 305 is formed through the second mask, and finally a jumper 309 is formed on the resin layer 307, the span
  • the wiring 309 is located at an upper portion of the scan line 302 and spans the scan line 302; both ends of the jumper 309 are electrically connected to the data line 304 through the second via 308; the resin layer 307 For PFA (English name: Poly Fluoro Alkoxy, referred to as: perfluoroalkylate) layer.
  • a portion of the data line 304 corresponding to the scan line 302 is vacant, and a jumper 309 is formed on the upper side of the substrate instead of the data line 304 of the vacant portion, which corresponds to the data line 304 of the vacant portion. Moving up to extend the distance between the overlap of the data line 304 and the scan line 302, thereby reducing parasitic capacitance.
  • the jumper 309 is a molybdenum-titanium (Moti) material such that the data line 304 can be turned on better.
  • Moti molybdenum-titanium
  • the present invention provides a COA liquid crystal display panel, comprising: an upper substrate on which a black matrix is formed to cover light of an edge region of a pixel unit and an interval region of an adjacent pixel unit; and a lower substrate, The upper substrate is oppositely disposed; the liquid crystal layer is located between the upper substrate and the lower substrate; the lower substrate comprises: an array of thin film transistors including a gate, a source and a drain; and a data line connected to a source of the thin film transistor for inputting a display data signal to the pixel unit; a scan line perpendicularly intersecting the data line to define the pixel unit, the scan line being connected to a gate of the thin film transistor And controlling the opening and closing of the gate of the thin film transistor; the common electrode is connected to the common electrode connection line through the first via, the common electrode connection line is disposed in the same layer as the scan line, and the common electrode connection line Parallel and adjacent to the scan line of the previous pixel unit; the pixel electrode is connected to the drain of the
  • the COA substrate provided by the present invention forms a gap in a portion where the data line overlaps the scan line, and a jumper is added on the upper side of the substrate to connect the gap of the data line, and the thickness of the film layer of the scan line increases from the jumper line, thereby reducing The parasitic capacitance value of the overlap portion, the signal delay is reduced, and the effective charging time of the pixel is increased, thereby improving the display effect of the liquid crystal display panel.
  • the working principle of the COA liquid crystal display panel of the preferred embodiment is the same as that of the COA substrate of the preferred embodiment.

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Abstract

一种COA基板，包括薄膜晶体管阵列、数据线(102)及扫描线(103)，数据线(102)与扫描线(103)垂直相交，数据线(102)相交于扫描线(103)上方的部位形成缺口，该缺口跨过扫描线(103)，该缺口通过跨接线(108)连接，跨接线(108)通过过孔(109)与数据线(102)导通；数据线(102)重叠于扫描线(103)的部位由位于不同膜层的跨接线(108)代替，跨接线(108)距离扫描线(102)厚度增加，重叠部的寄生电容值降低。

Description

COA基板及液晶显示面板 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种COA基板及具有所述COA基板的液晶显示面板。
 背景技术
液晶显示器件(Liquid Crystal Display，简称LCD) 和有机电致发光器件(Organic electroluminescent device，简称OLED) 等显示器件已成为人们生活中的必需品，随着人们需求的提高，为了提高显示器件的显示品质，避免阵列基板和彩膜基板对盒时的偏差影响显示器件开口率和出现漏光的问题，彩色滤光片与阵列基板集成在一起的集成技术(Color Filter on Array，简称COA) 应用而生，COA 技术就是将彩色滤光片设置于阵列基板上。
随着面板像素密度越来越高，像素的扫描线也会随即增加，在单位帧时间内，像素的充电时间就会越来越短，为了尽量增加像素充电时间，可以降低数据线的RC delay（信号延迟），而信号延迟主要受数据线的寄生电容值影响；现在的平面转换（In-Plane Switching，简称IPS）型液晶屏，大多采用COA技术，栅极线和数据线相交处寄生电容值较高，增加了信号延迟，像素的有效充电时间减少，进而影响液晶显示面板的显示效果。
 技术问题
本发明提供一COA基板，能够降低数据线与扫描线间的寄生电容值，以解决现有的COA液晶显示面板，栅极线和数据线相交处寄生电容值较高，增加了信号延迟，像素的有效充电时间减少，进而影响液晶显示面板的显示效果的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种COA基板，包括：
阵列排布的薄膜晶体管，其包括栅极、源极及漏极；
数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；
扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；
公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；
像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；
彩色光阻层，用于将背光过滤成彩色光；其中，
所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通；
所述数据线相交于所述公共电极连接线上方的部位形成第二缺口，所述第二缺口跨过所述公共电极连接线，所述第二缺口两端通过第二跨接线连接，所述第二跨接线通过第三过孔与所述数据线导通。
根据本发明一优选实施例，所述跨接线电极材料选择为钼钛合金。
根据本发明一优选实施例，所述公共电极与像素电极材料选择为钼钛合金。
根据本发明一优选实施例，所述下基板的层状结构包括：玻璃基板，以及依次层叠制作于所述玻璃基板上的栅极金属层、栅极绝缘层、非晶硅层、源漏极金属层、钝化层、彩色光阻层及树脂层，所述公共电极、像素电极以及所述跨接线位于所述树脂层上，所述第二过孔从所述树脂层贯穿至所述源漏极金属层。
根据本发明一优选实施例，所述公共电极与所述公共电极为梳型电极，且二者间隔交替设置。
本发明还提供一种COA基板，包括：
阵列排布的薄膜晶体管，其包括栅极、源极及漏极；
数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；
扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；
公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；
像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；
彩色光阻层，用于将背光过滤成彩色光；其中，
所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通。
根据本发明一优选实施例，所述跨接线电极材料选择为钼钛合金。
根据本发明一优选实施例，所述公共电极与像素电极材料选择为钼钛合金。
根据本发明一优选实施例，所述下基板的层状结构包括：玻璃基板，以及依次层叠制作于所述玻璃基板上的栅极金属层、栅极绝缘层、非晶硅层、源漏极金属层、钝化层、彩色光阻层及树脂层，所述公共电极、像素电极以及所述跨接线位于所述树脂层上，所述第二过孔从所述树脂层贯穿至所述源漏极金属层。
根据本发明一优选实施例，所述公共电极与所述公共电极为梳型电极，且二者间隔交替设置。
依据本发明的上述目的，提出一种COA液晶显示面板，包括：
上基板，其上制备有黑色矩阵，用以遮盖像素单元边缘区以及相邻像素单元间隔区域的光；
下基板，与所述上基板相对设置；
液晶层，位于所述上基板与所述下基板之间；
所述下基板包括：
阵列排布的薄膜晶体管，其包括栅极、源极及漏极；
数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；
扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；
公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；
像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；
彩色光阻层，用于将背光过滤成彩色光；其中，
所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通。
根据本发明一优选实施例，所述跨接线电极材料选择为钼钛合金。
根据本发明一优选实施例，所述公共电极与像素电极材料选择为钼钛合金。
根据本发明一优选实施例，所述下基板的层状结构包括：玻璃基板，以及依次层叠制作于所述玻璃基板上的栅极金属层、栅极绝缘层、非晶硅层、源漏极金属层、钝化层、彩色光阻层及树脂层，所述公共电极、像素电极以及所述跨接线位于所述树脂层上，所述第二过孔从所述树脂层贯穿至所述源漏极金属层。
根据本发明一优选实施例，所述数据线相交于所述公共电极连接线上方的部位形成第二缺口，所述第二缺口跨过所述公共电极连接线，所述第二缺口两端通过第二跨接线连接，所述第二跨接线通过第三过孔与所述数据线导通。
根据本发明一优选实施例，所述公共电极与所述公共电极为梳型电极，且二者间隔交替设置。
 有益效果
本发明的有益效果为：本发明提供的COA基板，数据线重叠于扫描线的部位形成缺口，所述缺口跨过扫描线，并在基板上侧增设跨接线以连接数据线的缺口，跨接线距离扫描线的膜层厚度增加，从而降低重叠部寄生电容值，信号延迟减小，像素的有效充电时间增多，进而提高液晶显示面板的显示效果。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明COA基板一像素单元的结构示意图；
图2为本发明COA基板另一像素单元的结构示意图；
图3为本发明COA基板的膜层结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的COA基板，栅极线和数据线相交处寄生电容值较高，增加了信号延迟，像素的有效充电时间减少，进而影响液晶显示面板的显示效果的技术问题，本实施例能够解决该缺陷。
图1为本发明COA基板一像素单元的结构示意图。
如图1所示，图中包括有薄膜晶体管101、数据线102、扫描线103、公共电极104以及像素电极105；所述数据线102与扫描线103垂直相交以限定各像素单元；所述薄膜晶体管101包括有栅极、源极及漏极，所述薄膜晶体管101的栅极连接所述扫描线103，所述薄膜晶体管101的源极连接所述数据线102，所述薄膜晶体管101的漏极连接所述像素电极105；每一像素单元对应设置有公共电极104，所述公共电极104的端部通过第一过孔107连接公共电极连接线106，所述公共电极连接线106与所述扫描线103同层设置，所述公共电极连接线106平行且紧邻上一像素单元的扫描线103；所述公共电极104与像素电极105均为梳型电极，所述公共电极104与所述像素电极105交替设置；优选的，所述公共电极104与像素电极105材料及跨接线108均选择钼钛合金（Moti）材料。
图中，所述数据线102上形成有若干缺口，所述缺口分布于各扫描线103的上部，并且，将所述缺口通过跨接线108连接，所述跨接线108两端跨过所述扫描线103，所述跨接线108两端通过第二过孔109与所述数据线102相导通。
在COA基板的膜层结构中，所述数据线102所在金属层位于所述扫描线103所在金属层的上部，在所述数据线102所述在金属层上方还依次包括有钝化层、彩色光阻层以及树脂层，所述跨接线108形成于位于最上层的树脂层上，因而，相对于数据线102所在金属层，所述跨接线108所在层距离所述扫描线103所在金属的膜层厚度更大，因此相当于，所述数据线102与所述扫描线103重叠部分的间隔距离增大，进而降低所述数据线102与所述扫描线103之间的寄生电容值，从而减小信号信号延迟，各像素单元的有效充电时间增多。
图2为本发明COA基板另一像素单元的结构示意图。
如图2所示，包括有薄膜晶体管201、数据线202、扫描线203、公共电极204以及像素电极205；所述数据线202与扫描线203垂直相交以限定各像素单元；所述薄膜晶体管201包括有栅极、源极及漏极，所述薄膜晶体管201的栅极连接所述扫描线203，所述薄膜晶体管201的源极连接所述数据线202，所述薄膜晶体管201的漏极连接所述像素电极205；每一像素单元对应设置有公共电极204，所述公共电极204的端部通过第一过孔207连接公共电极连接线206，所述公共电极连接线206与所述扫描线203同层设置，所述公共电极连接线206平行且紧邻上一像素单元的扫描线203；所述公共电极204与像素电极205均为梳型电极，所述公共电极204与所述像素电极205交替设置。
图中，所述数据线202上形成有若干缺口，所述缺口分布于各所述扫描线203以及公共电极连接线206的上部，并且，将所述缺口通过跨接线208连接，其中，所述跨接线包括跨过所述扫描线203的第一跨接线2081，以及跨过所述公共电极连接线206的第二跨接线2082，所述第一跨接线2081两端通过第二过孔209与所述数据线202相导通，所述第二跨接线2082两端通过第三过孔210与所述数据线202相导通。
从而，所述数据线202重叠于所述公共电极连接线206的部分同样通过跨接线连接，进一步数据线202与基板上的金属线之间的寄生电容值，进而减小信号信号延迟，液晶显示面板具有更好的显示效果。
图3为本发明COA基板的膜层结构示意图。
如图3所示，包括有玻璃基板301，所述玻璃基板301上制作第一金属层，通过第一掩膜版形成薄膜晶体管的栅极及扫描线302，所述扫描线302连接所述薄膜晶体的栅极，然后在所述玻璃基板301上制作栅极绝缘层303，紧接着在所述栅极绝缘层303上制作第二金属层，通过第二掩膜版形成薄膜晶体管的源极、漏极、数据线304以及形成于所述数据线304上的缺口，所述数据线304连接所述薄膜晶体管的源极，然后在所述玻璃基板301上制作钝化层305，接着在所述钝化层305上制作彩色光阻层306，然后在所述保护层上制作树脂层307。
当所述树脂层307制作完成，通过第二掩膜版形成贯穿所述树脂层307及钝化层305的第二过孔308，最后在所述树脂层307上制作跨接线309，所述跨接线309对应位于所述扫描线302的上部且跨过所述扫描线302；所述跨接线309的两端通过所述第二过孔308与所述数据线304导通；所述树脂层307为PFA（英文名称为：Poly Fluoro Alkoxy，简称：过氟烷基化物）层。
上述COA基板的膜层结构中，使所述数据线304对应扫描线302的部分空缺，并在基板上侧制作跨接线309来替代空缺部的数据线304，相当于将空缺部的数据线304上移，以延长所述数据线304与扫描线302的重叠部分之间的距离，进而降低寄生电容。
优选的，所述跨接线309为钼钛合金（Moti）材料，使得所述数据线304能够较好的导通。
本发明依据上述发明目的，提供一种COA液晶显示面板，包括：上基板，其上制备有黑色矩阵，用以遮盖像素单元边缘区以及相邻像素单元间隔区域的光；下基板，与所述上基板相对设置；液晶层，位于所述上基板与所述下基板之间；所述下基板包括：阵列排布的薄膜晶体管，其包括栅极、源极及漏极；数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；彩色光阻层，用于将背光过滤成彩色光；其中，所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通。
有益效果为：本发明提供的COA基板，数据线重叠于扫描线的部位形成缺口，并在基板上侧增设跨接线以连接数据线的缺口，跨接线距离扫描线的膜层厚度增加，从而降低重叠部寄生电容值，信号延迟减小，像素的有效充电时间增多，进而提高液晶显示面板的显示效果
本优选实施例的COA液晶显示面板的工作原理与上述优选实施例的COA基板的工作原理一致，具体可参考上述优选实施例的COA基板的工作原理，此处不再做赘述。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种COA基板，其中，包括：
    阵列排布的薄膜晶体管，其包括栅极、源极及漏极；
    数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；
    扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；
    公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；
    像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；
    彩色光阻层，用于将背光过滤成彩色光；其中，
    所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通；
    所述数据线相交于所述公共电极连接线上方的部位形成第二缺口，所述第二缺口跨过所述公共电极连接线，所述第二缺口两端通过第二跨接线连接，所述第二跨接线通过第三过孔与所述数据线导通。
  2. 根据权利要求1所述的COA基板，其中，所述跨接线电极材料选择为钼钛合金。
  3. 根据权利要求1所述的COA基板，其中，所述公共电极与像素电极材料选择为钼钛合金。
  4. 根据权利要求1所述的COA基板，其中，所述下基板的层状结构包括：玻璃基板，以及依次层叠制作于所述玻璃基板上的栅极金属层、栅极绝缘层、非晶硅层、源漏极金属层、钝化层、彩色光阻层及树脂层，所述公共电极、像素电极以及所述跨接线位于所述树脂层上，所述第二过孔从所述树脂层贯穿至所述源漏极金属层。
  5. 根据权利要求1所述的COA基板，其中，所述公共电极与所述公共电极为梳型电极，且二者间隔交替设置。
  6. 一种COA基板，其中，包括：
    阵列排布的薄膜晶体管，其包括栅极、源极及漏极；
    数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；
    扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；
    公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；
    像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；
    彩色光阻层，用于将背光过滤成彩色光；其中，
    所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通。
  7. 根据权利要求1所述的COA基板，其中，所述跨接线电极材料选择为钼钛合金。
  8. 根据权利要求1所述的COA基板，其中，所述公共电极与像素电极材料选择为钼钛合金。
  9. 根据权利要求1所述的COA基板，其中，所述下基板的层状结构包括：玻璃基板，以及依次层叠制作于所述玻璃基板上的栅极金属层、栅极绝缘层、非晶硅层、源漏极金属层、钝化层、彩色光阻层及树脂层，所述公共电极、像素电极以及所述跨接线位于所述树脂层上，所述第二过孔从所述树脂层贯穿至所述源漏极金属层。
  10. 根据权利要求1所述的COA基板，其特征在于，所述公共电极与所述公共电极为梳型电极，且二者间隔交替设置。
  11. 一种COA液晶显示面板，其中，包括：
    上基板，其上制备有黑色矩阵，用以遮盖像素单元边缘区以及相邻像素单元间隔区域的光；
    下基板，与所述上基板相对设置；
    液晶层，位于所述上基板与所述下基板之间；
    所述下基板包括：
    阵列排布的薄膜晶体管，其包括栅极、源极及漏极；
    数据线，连接于所述薄膜晶体管的源极，用以向所述像素单元输入显示数据信号；
    扫描线，与所述数据线垂直相交以限定所述像素单元，所述扫描线连接于所述薄膜晶体管的栅极，用以控制所述薄膜晶体管栅极的开闭；
    公共电极，通过第一过孔连接于公共电极连接线，所述公共电极连接线与所述扫描线同层设置，所述公共电极连接线平行且紧邻上一像素单元的扫描线；
    像素电极，连接于所述薄膜晶体管的漏极，与所述公共电极同层间隔设置，以形成水平电场驱动液晶分子旋转；
    彩色光阻层，用于将背光过滤成彩色光；其中，
    所述数据线相交于所述扫描线上方的部位形成缺口，所述缺口跨过所述扫描线，所述缺口两端通过跨接线连接，所述跨接线通过第二过孔与所述数据线导通。
  12. 根据权利要求11所述的COA液晶显示面板，其中，所述跨接线电极材料选择为钼钛合金。
  13. 根据权利要求11所述的COA液晶显示面板，其中，所述公共电极与像素电极材料选择为钼钛合金。
  14. 根据权利要求11所述的COA液晶显示面板，其中，所述下基板的层状结构包括：玻璃基板，以及依次层叠制作于所述玻璃基板上的栅极金属层、栅极绝缘层、非晶硅层、源漏极金属层、钝化层、彩色光阻层及树脂层，所述公共电极、像素电极以及所述跨接线位于所述树脂层上，所述第二过孔从所述树脂层贯穿至所述源漏极金属层。
PCT/CN2017/073331 2017-01-18 2017-02-13 Coa基板及液晶显示面板 Ceased WO2018133134A1 (zh)

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