WO2018218711A1 - Tft基板和液晶显示面板 - Google Patents

Tft基板和液晶显示面板 Download PDF

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Publication number
WO2018218711A1
WO2018218711A1 PCT/CN2017/089612 CN2017089612W WO2018218711A1 WO 2018218711 A1 WO2018218711 A1 WO 2018218711A1 CN 2017089612 W CN2017089612 W CN 2017089612W WO 2018218711 A1 WO2018218711 A1 WO 2018218711A1
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WIPO (PCT)
Prior art keywords
substrate
liquid crystal
insulating layer
disposed
data line
Prior art date
Application number
PCT/CN2017/089612
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English (en)
French (fr)
Inventor
王勐
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US15/735,292 priority Critical patent/US10877339B2/en
Publication of WO2018218711A1 publication Critical patent/WO2018218711A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/133514—Colour filters
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • the present invention relates to the field of liquid crystal display panel fabrication, and in particular to a TFT substrate and a liquid crystal display panel.
  • the pixel electrode on the array substrate is extended above the data line to shield the influence of the electric field of the data line on the liquid crystal, which ensures the aperture ratio.
  • this approach increases the parasitic capacitance between the pixel electrode and the data line, thereby increasing the risk of signal crosstalk.
  • Embodiments of the present invention provide a TFT substrate, including:
  • a first insulating layer disposed on the first substrate and the data line
  • a first common electrode disposed on the first insulating layer and located above the data line and covering the data line;
  • a second insulating layer disposed on the first common electrode and the first insulating layer
  • the pixel electrode extends above the first common electrode.
  • the material of the first common electrode is a transparent conductive metal or a transparent conductive metal oxide.
  • the material of the first common electrode is indium tin oxide.
  • the material of the pixel electrode is a transparent conductive metal or a transparent conductive metal oxide.
  • the material of the pixel electrode is indium tin oxide.
  • the material of the second insulating layer is silicon oxide and/or silicon nitride.
  • the material of the first insulating layer is silicon oxide and/or silicon nitride.
  • the material of the data line is a highly conductive metal material.
  • the first substrate is a glass substrate.
  • an embodiment of the present invention further provides a liquid crystal display panel, including: a liquid crystal layer, a CF substrate disposed on one side of the liquid crystal layer, and a TFT substrate disposed on the other side of the liquid crystal layer;
  • the TFT substrate includes:
  • a first insulating layer disposed on the first substrate and the data line
  • a first common electrode disposed on the first insulating layer and located above the data line and covering the data line;
  • a second insulating layer disposed on the first common electrode and the first insulating layer
  • a pixel electrode disposed on the second insulating layer.
  • the pixel electrode extends above the first common electrode.
  • the CF substrate comprises:
  • a black matrix disposed on the second substrate and covering the first common electrode
  • the color resist layer disposed on the second substrate, the color resist layer comprising a plurality of color block blocks arranged in a matrix, the plurality of color block blocks being spaced apart by the black matrix;
  • a second common electrode disposed on the black matrix and the color resist layer.
  • the second substrate is located on a side of the CF substrate away from the liquid crystal layer.
  • the material of the black matrix is an opaque metal oxide film or a resin type black photoresist film.
  • the color resist layer includes a plurality of red color blockes arranged in a matrix, a plurality of green color blocks, and a plurality of blue color blocks.
  • the material of the first common electrode is a transparent conductive metal or a transparent conductive metal oxide.
  • the material of the pixel electrode is indium tin oxide.
  • the material of the data line is a highly conductive metal material.
  • the material of the first insulating layer is silicon oxide and/or silicon nitride
  • the material of the second insulating layer is silicon oxide and/or silicon nitride
  • the TFT substrate Compared with the existing TFT substrate, the TFT substrate provided by the present invention includes: a first substrate; a data line disposed on the first substrate; a first insulating layer disposed on the first substrate and the data line; a common electrode disposed on the first insulating layer and located above the data line and covering the data line; a second insulating layer disposed on the first common electrode and the first insulating layer; and a pixel electrode It is disposed on the second insulating layer.
  • the scheme adds a first common electrode above the data line, and an insulating layer is disposed between the first common electrode and the pixel electrode, which can shield the influence of the electric field of the data line on the liquid crystal layer, and at the same time ensure a high aperture ratio; It also avoids parasitic capacitance between the data line and the pixel electrode, thereby reducing the risk of crosstalk and improving the display effect of the liquid crystal panel.
  • FIG. 1 is a schematic view showing the first structure of a liquid crystal display panel in a preferred embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a TFT substrate in the liquid crystal display panel shown in FIG. 1.
  • FIG. 3 is a schematic view showing the first structure of a CF substrate in the liquid crystal display panel shown in FIG. 1.
  • FIG. 4 is a schematic view showing a second structure of a CF substrate in the liquid crystal display panel shown in FIG. 1.
  • FIG. 5 is a schematic view showing a second structure of a liquid crystal display panel in a preferred embodiment of the present invention.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • FIG. 1 is a schematic view showing a first structure of a liquid crystal display panel according to a preferred embodiment of the present invention.
  • the liquid crystal display panel of the preferred embodiment includes a TFT (Thin Film). Transistor, thin film transistor) substrate 100, CF (Color Filter) substrate 200, and LC (Liquid) Crystal, liquid crystal) layer.
  • the TFT substrate 100 is disposed on one side of the liquid crystal layer 300, and the CF substrate 200 is disposed on the other side of the liquid crystal layer 300.
  • a backlight module is disposed on a side of the TFT substrate 100 away from the liquid crystal layer 300.
  • the TFT substrate 100 has a TFT driving array for driving liquid crystal molecules in the liquid crystal layer 300 to deflect, and refracting the light irradiated by the backlight. When it comes out, a screen is generated through the CF substrate 200, thereby realizing image display.
  • FIG. 2 is a schematic structural view of a TFT substrate 100 in the liquid crystal display panel shown in FIG. 1.
  • FIG. 5 is a schematic view showing a second structure of a liquid crystal display panel in a preferred embodiment of the present invention.
  • the TFT substrate 100 includes a first substrate 10, a data line 11, a first insulating layer 12, a first common electrode 13, a second insulating layer 14, and a pixel electrode 15.
  • the data line 11 is disposed on the first substrate 10.
  • the material of the data line 11 may be a metal material such as Mo/Cu, Al/Mo, MoTi/Cu.
  • the first substrate 10 may be a transparent rigid substrate or a flexible substrate.
  • the first substrate 10 may be glass, quartz, or PI (Polyimide). Film, polyimide fiber layer, etc.
  • the first insulating layer 12 is disposed on the first substrate 100 and the data line 11 and is transparent.
  • the first insulating layer 12 may be a layer structure or a two-layer structure.
  • the first layer structure may be one or more insulating materials of SiOX, SiNX or AlOX, such as Si3N4, SiO2 or Al2O3.
  • the second layer structure can generally be made of silicon nitride (i.e., SiNX), such as Si3N4.
  • an insulating material such as Si3N4, SiO2, Al2O3, etc.
  • a photoresist having a uniform thickness of the cloth is etched away from the insulating material on a certain area of the substrate 10 by a yellow light process, and the region is used as a data line region, and then the metal material is deposited, and then the photoresist and the metal material on the photoresist are removed.
  • the metal layer remaining in the data area is taken as the data line 11.
  • an insulating material such as Si3N4 is deposited on the entire surface by physical vapor deposition. Thereby, the data line 11 and the first insulating layer 12 are formed on the substrate 10.
  • the first common electrode 13 is disposed on the first insulating layer 12 and above the data line 11 and covers the data line 11. That is, in the embodiment of the present invention, the first common electrode 13 completely covers the first insulating layer 12 located on the upper surface portion of the data line 11.
  • the material of the first common electrode 13 may be a transparent conductive metal, a transparent conductive metal oxide or other transparent conductive material.
  • the material of the first common electrode 13 is indium tin oxide (ie, ITO).
  • the first common electrode 13 may be formed on the first insulating layer 12 by a physical vapor deposition method, a yellow light process, an etching process, or the like.
  • the second insulating layer 14 is disposed on the first common electrode 13 and the first insulating layer 12 and is transparent.
  • the material of the second insulating layer 14 may be SiOX, SiNX or the like.
  • a pixel electrode 15 is disposed on the second insulating layer 14.
  • the material of the pixel electrode 15 may be a transparent conductive metal, a transparent conductive metal oxide or other transparent conductive material.
  • the material of the pixel electrode 15 is indium tin oxide (ie, ITO).
  • the pixel electrode 15 may extend over the first common electrode 13 to increase the aperture ratio. For example, when PPI>400, the aperture ratio can reach 30% ⁇ 40%.
  • the liquid crystal layer 300 is disposed on a side of the TFT substrate 100 close to the pixel electrode 15, and the liquid crystal layer 300 covers the pixel electrode 15 and the second insulating layer 14.
  • the design of the TFT substrate can not increase the parasitic capacitance between the pixel electrode and the data line on the basis of ensuring a certain aperture ratio of the pixel, and avoid the risk of signal crosstalk caused by the data line to the pixel electrode.
  • FIG. 3 is a first structural diagram of a CF substrate in the liquid crystal display panel of FIG.
  • the CF substrate 300 includes a second substrate 20, a black matrix 21, a color resist layer 22, and a second common electrode 23.
  • the black matrix 21 is disposed on the second substrate 20.
  • the second substrate 20 may be a transparent rigid substrate or a flexible substrate.
  • the second substrate 20 may be a glass, quartz, PI layer or the like.
  • the black matrix 21 is mainly used to place light leakage between pixels and to increase contrast between colors.
  • the black matrix 21 is an opaque material, and can be prepared from a metal oxide film such as titanium oxide, that is, Ti4O7, or a resin type black photoresist film (having carbon black as a main material).
  • the color resist layer 22 is disposed on the second substrate 20, and the color resist layer 22 includes a plurality of color block blocks arranged in a matrix (including a red color block 221, a green color block 222, and a blue color block 223).
  • the plurality of color block blocks are spaced apart by the black matrix 21.
  • the black matrix 21 can effectively prevent color crosstalk between pixels of different colors and improve the display effect.
  • the thickness of the black matrix 21 can be set to be greater than the thickness of the color resist 22, to better prevent the color crosstalk effect between pixels of different colors.
  • a second common electrode 23 is disposed on the black matrix and the color resist layer.
  • the material of the second common electrode 23 may be a transparent conductive metal, a transparent conductive metal oxide or other transparent conductive material.
  • the material of the second common electrode 23 is indium tin oxide (ie, ITO).
  • a highly conductive metal such as Al, Ag, Cu, Mo, Au, etc.
  • a metal alloy may be selected as a preparation material of the black matrix 21 as an auxiliary electrode to enhance the second common electrode 23 Conductive properties.
  • the liquid crystal layer 300 is disposed on a side of the CF substrate 200 near the second common electrode 23.
  • the black matrix 21 covers the first common electrode 13.
  • a protective layer 24 is disposed on the color resist layer 22 to protect the color resist layer 22 and increase the smoothness of the surface.
  • the protective layer 24 can be prepared from a polymer material such as an epoxy resin (acrylic resin) or an acrylic resin (Acrylic).
  • the second common electrode 24 is coated with an alignment film 25 to better control the orientation and angle of the liquid crystal molecules.
  • the liquid crystal display panel includes a liquid crystal layer, a CF substrate disposed on one side of the liquid crystal layer, and a TFT substrate disposed on the other side of the liquid crystal layer.
  • the TFT substrate includes: a first substrate; a data line disposed on the first substrate; a first insulating layer disposed on the first substrate and the data line; and a first common electrode disposed on the first insulating layer And over the data line and covering the data line; a second insulating layer disposed on the first common electrode and the first insulating layer; and a pixel electrode disposed on the second insulating layer.
  • the solution adds a first common electrode between the data line and the liquid crystal layer, and an insulating layer is disposed between the first common electrode and the pixel electrode, which can shield the influence of the electric field of the data line on the liquid crystal layer, and at the same time ensure a high opening.
  • the parasitic capacitance between the pixel electrode and the data line is not increased on the basis of ensuring a certain aperture ratio, thereby avoiding the risk of signal crosstalk caused by the data line to the pixel electrode, and improving the display effect of the liquid crystal panel. .

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Abstract

一种TFT基板（100）和液晶显示器。TFT基板（100）包括：第一基板（10）；数据线（11），设置在第一基板（10）上；第一绝缘层（12），设置在第一基板（10）和数据线（11）上；第一公共电极（13），设置在第一绝缘层（12）上，且位于数据线（11）的上方并覆盖数据线（11）；第二绝缘层（14），设置在第一公共电极（13）和第一绝缘层（12）上；像素电极（15），设置在第二绝缘层（14）上。

Description

TFT基板和液晶显示面板 技术领域
本发明涉及液晶显示面板制作领域，特别是涉及一种TFT基板和液晶显示面板。
 背景技术
在信息社会的当代，作为可视信息传输媒介的显示器的重要性在进一步加强，为了在未来占据主导地位，显示器正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。
液晶显示面板行业，VA（ Vertical Alignment，垂直调整）显示模式的液晶显示面板中，为了避免数据线电场对像素电极上方LC（Liquid Crystal，液晶）的影响，通常在像素电极和数据线的交汇间隔处设置金属遮光结构，可屏蔽数据线电场对像素电极上方液晶层的影响，从而避免像素漏光。然而这种方式降低了AR（Aperture Ratio，开口率）。
另外，相关技术中，将阵列基板上的像素电极延伸到数据线上方，以屏蔽数据线电场对液晶的影响，其保证了开口率。然而这种方式增加了像素电极与数据线之间的寄生电容，从而增加了信号串扰风险。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明的目的在于提供一种改进的彩膜基板和液晶显示器。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明实施例提供一种TFT基板，包括：
一第一基板；
一数据线，其设置在所述第一基板上；
第一绝缘层，其设置在所述第一基板和所述数据线上；
第一公共电极，其设置在所述第一绝缘层上，且位于所述数据线的上方并覆盖所述数据线；
第二绝缘层，其设置在所述第一公共电极和所述第一绝缘层上；
一像素电极，其设置在所述第二绝缘层上
在一些实施例中，所述像素电极延伸至所述第一公共电极上方。
在一些实施例中，所述第一公共电极的材料为透明导电金属或透明导电金属氧化物。
在一些实施例中，所述第一公共电极的材料为氧化铟锡。
在一些实施例中，所述像素电极的材料为透明导电金属或透明导电金属氧化物。
在一些实施例中，所述像素电极的材料为氧化铟锡。
在一些实施例中，所述第二绝缘层的材料为氧化硅和/或氮化硅。
在一些实施例中，所述第一绝缘层的材料为氧化硅和/或氮化硅。
在一些实施例中，所述数据线的材料为高导电的金属材料。
在一些实施例中，所述第一基板为玻璃基板。
相应地，本发明实施例还提供一种液晶显示面板，包括：液晶层、设置在所述液晶层一侧的CF基板、以及设置在所述液晶层另一侧的TFT基板；
其中，所述TFT基板包括：
一第一基板；
一数据线，其设置在所述第一基板上；
第一绝缘层，其设置在所述第一基板和所述数据线上；
第一公共电极，其设置在所述第一绝缘层上，且位于所述数据线的上方并覆盖所述数据线；
第二绝缘层，其设置在所述第一公共电极和所述第一绝缘层上；
一像素电极，其设置在所述第二绝缘层上。
在一些实施例中，所述像素电极延伸至所述第一公共电极上方。
在一些实施例中，所述CF基板包括：
第二基板；
黑色矩阵，其设置在所述第二基板上，且遮住所述第一公共电极；
色阻层，其设置在第二基板上，所述色阻层包括呈矩阵排列的多个色阻块，所述多个色阻块通过所述黑色矩阵间隔开；
第二公共电极，其设置在所述黑色矩阵以及所述色阻层上。
在一些实施例中，所述第二基板位于所述CF基板远离所述液晶层的一侧。
在一些实施例中，所述黑色矩阵的材料为不透光的金属氧化薄膜或树脂型的黑色光阻薄膜。
在一些实施例中，所述色阻层包括呈矩阵排列的多个红色色阻块、多个绿色色组块、以及多个蓝色色组块。
在一些实施例中，所述第一公共电极的材料为透明导电金属或透明导电金属氧化物。
在一些实施例中，所述像素电极的材料为氧化铟锡。
在一些实施例中，所述数据线的材料为高导电的金属材料。
在一些实施例中，所述第一绝缘层的材料为氧化硅和/或氮化硅，所述第二绝缘层的材料为氧化硅和/或氮化硅。
 有益效果
相较于现有的TFT基板，本发明提供的TFT基板包括：第一基板；数据线，其设置在第一基板上；第一绝缘层，其设置在第一基板和数据线上；第一公共电极，其设置在第一绝缘层上，且位于所述数据线的上方并覆盖所述数据线；第二绝缘层，其设置在第一公共电极和第一绝缘层上；像素电极，其设置在第二绝缘层上。该方案在数据线上方新增第一公共电极，并在第一公共电极与像素电极之间设置绝缘层，可屏蔽数据线电场对液晶层的影响，同时保证其具有较高的开口率；此外，还避免数据线与像素电极之间产生寄生电容，从而降低了串扰风险，提高液晶面板的显示效果。
 附图说明
图1为本发明优选实施例中液晶显示面板的第一种结构示意图。
图2为图1所示液晶显示面板中TFT基板的结构示意图。
图3为图1所示液晶显示面板中CF基板的第一种结构示意图。
图4为图1所示液晶显示面板中CF基板的第二种结构示意图。
图5为本发明优选实施例中液晶显示面板的第二种结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的模块是以相同标号表示。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
参阅图1，图1为本发明优选实施例中液晶显示面板的第一种结构示意图。如图1所示，本优选实施例的液晶显示面板，包括TFT（Thin Film Transistor，薄膜晶体管）基板100、CF（Color Filter，彩膜）基板200、以及LC（Liquid Crystal，液晶）层。其中，TFT基板100设置在液晶层300的一侧，CF基板200设置在液晶层300的另一侧。
其中，在TFT基板100上远离液晶层300的一侧设置有背光源模组，TFT基板100上具有TFT驱动阵列，用于驱动液晶层300中的液晶分子发生偏转，将背光源照射的光线折射出来，再透过CF基板200产生画面，从而实现图像显示。
在一些实施例中，参考图2和图5。图2为图1所示液晶显示面板中TFT基板100的结构示意图。图5为本发明优选实施例中液晶显示面板的第二种结构示意图。如图2所示，该TFT基板100包括第一基板10、数据线11、第一绝缘层12、第一公共电极13、第二绝缘层14以及像素电极15。
具体地，数据线11设置在第一基板10上。该数据线11的材料可以为Mo/Cu，Al/Mo，MoTi/Cu等金属材料。第一基板10可以为透明的硬性基板或柔性基板，比如，该第一基板10可以是玻璃、石英、PI（Polyimide Film，聚酰亚胺纤维）层等。
第一绝缘层12，其设置在第一基板100和数据线11上，且呈透明状。本发明实施例中，第一绝缘层12可以是一层结构，也可以是两层结构。当其为两层结构时，第一层结构可以为SiOX、SiNX或AlOX中的一种或多种绝缘材料，如Si3N4、SiO2或Al2O3等。第二层结构一般可采用氮化硅（即SiNX）制成，如Si3N4。
以该第一绝缘层12为两层结构为例，实际应用中，可以在该基板10上沉积绝缘材料（如Si3N4、SiO2或Al2O3等），以得到绝缘材料层，并在绝缘材料层上涂布厚度均匀的光阻，通过黄光工艺刻蚀掉基板10某一区域上的绝缘材料，并以该区域作为数据线区域，然后沉积金属材料，再去除光阻以及光阻上的金属材料，以将该数据区域内保留的金属层作为成数据线11。然后，采用物理气相沉积法整面沉积绝缘材料（如Si3N4）。从而在基板10上形成数据线11和第一绝缘层12。
第一公共电极13，其设置在第一绝缘层12上，且位于数据线11的上方并覆盖数据线11。也即，本发明实施例中，该第一公共电极13完全覆盖位于数据线11上表面部分的第一绝缘层12。
在本发明实施例中，第一公共电极13的材料可为透明导电金属、透明导电金属氧化物或其他透明导电材料。优选地，该第一公共电极13的材料为氧化铟锡（即ITO）。
实际应用中，可通过物理气相沉积法、黄光工艺、刻蚀工艺等在第一绝缘层12上形成第一公共电极13。
第二绝缘层14，其设置在第一公共电极13和第一绝缘层12上，且呈透明状。该第二绝缘层14的材料可为SiOX、SiNX等。
像素电极15，其设置在第二绝缘层14上。本发明实施例中，像素电极15的材料可为透明导电金属、透明导电金属氧化物或其他透明导电材料。优选地，该像素电极15的材料为氧化铟锡（即ITO）。
在一些实施例中，参考图2和图5，像素电极15可延伸至第一公共电极13上方，以提高开口率。比如，在PPI>400时，其开口率可达30%~40%。
参考图5，液晶层300设置在TFT基板100靠近像素电极15的一侧，液晶层300覆盖像素电极15以及第二绝缘层14。
可知，该TFT基板的设计可在保证像素具有一定开口率的基础上又不增加像素电极与数据线之间的寄生电容，避免了数据线对像素电极造成的信号串扰风险。
参考图3，图3为图1所示液晶显示面板中CF基板的第一种结构示意图。如图3所示，该CF基板300包括第二基板20、黑色矩阵21、色阻层22以及第二公共电极23。
其中，黑色矩阵21，其设置在第二基板20上。第二基板20可以为透明的硬性基板或柔性基板，比如，该第二基板20可以是玻璃、石英、PI层等。
在本发明实施例中，黑色矩阵21主要用于放置像素间漏光，以及增加色彩间的对比性。黑色矩阵21为不透光的材料，可由金属氧化薄膜（如亚氧化钛，即Ti4O7）制备，或树脂型的黑色光阻薄膜（以碳黑为主要材料）制备。
色阻层22，其设置在第二基板20上，该色阻层22包括呈矩阵排列的多个色阻块（包括红光色阻块221、绿光色阻块222、蓝光色阻块223），该多个色阻块通过黑色矩阵21间隔开。黑色矩阵21可有效防止不同颜色像素间的颜色串扰，提高显示效果。
实际应用中，黑色矩阵21的厚度可设置大于色阻快22的厚度，以更好地起到防止不同颜色像素间的颜色串扰效果。
第二公共电极23，其设置在黑色矩阵以及色阻层上。本发明实施例中，第二公共电极23的材料可为透明导电金属、透明导电金属氧化物或其他透明导电材料。优选地，该第二公共电极23的材料为氧化铟锡（即ITO）。
在一些实施例中，可以选取高导电性的金属（如Al、Ag、Cu、Mo、Au等）或金属合金作为黑色矩阵21的制备材料，将其作为辅助电极，以提高第二公共电极23的导电性能。从而更好地控制液晶分子偏转，提升液晶面板的显示效果。
参考图5，液晶层300设置在CF基板200靠近第二公共电极23的一侧。在本发明实施例中，黑色矩阵21遮住第一公共电极13。
在一些实施例中，参考图4，该色阻层22上设置有保护层24，以保护色阻层22并增加表面的平滑性。一般地，该保护层24可由环氧树脂（Epoxy）系或压克力树脂（Acrylic）系等高分子材料制备。
继续参考图4，在一些实施例中，该第二公共电极24上涂布有配向膜25，以更好地控制液晶分子的朝向和角度。
由上可知，本发明实施例提供的液晶显示面板，包括液晶层、设置在所述液晶层一侧的CF基板、以及设置在所述液晶层另一侧的TFT基板。其中，该TFT基板包括：第一基板；数据线，其设置在第一基板上；第一绝缘层，其设置在第一基板和数据线上；第一公共电极，其设置在第一绝缘层上，且位于所述数据线的上方并覆盖所述数据线；第二绝缘层，其设置在第一公共电极和第一绝缘层上；像素电极，其设置在第二绝缘层上。该方案在数据线与液晶层之间新增第一公共电极，并在第一公共电极与像素电极之间设置绝缘层，可屏蔽数据线电场对液晶层的影响，同时保证了较高的开口率，相对于现有技术，在保证一定开口率的基础上又不增加像素电极与数据线之间的寄生电容，避免了数据线对像素电极造成的信号串扰风险，提高了液晶面板的显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种TFT基板，其中，包括：
    一第一基板；
    一数据线，其设置在所述第一基板上；
    第一绝缘层，其设置在所述第一基板和所述数据线上；
    第一公共电极，其设置在所述第一绝缘层上，且位于所述数据线的上方并覆盖所述数据线；
    第二绝缘层，其设置在所述第一公共电极和所述第一绝缘层上；
    像素电极，其设置在所述第二绝缘层上
  2. 如权利要求1所述的TFT基板，其中，所述像素电极延伸至所述第一公共电极上方。
  3. 如权利要求1所述的TFT基板，其中，所述第一公共电极的材料为透明导电金属或透明导电金属氧化物。
  4. 如权利要求3所述的TFT基板，其中，所述第一公共电极的材料为氧化铟锡。
  5. 如权利要求1所述的TFT基板，其中，所述像素电极的材料为透明导电金属或透明导电金属氧化物。
  6. 如权利要求5所述的TFT基板，其中，所述像素电极的材料为氧化铟锡。
  7. 如权利要求1所述的TFT基板，其中，所述第二绝缘层的材料为氧化硅和/或氮化硅。
  8. 如权利要求1所述的TFT基板，其中，所述第一绝缘层的材料为氧化硅和/或氮化硅。
  9. 如权利要求1所述的TFT基板，其中，所述数据线的材料为高导电的金属材料。
  10. 如权利要求1所述的TFT基板，其中，所述第一基板为玻璃基板。
  11. 一种液晶显示面板，其中，包括液晶层、设置在所述液晶层一侧的CF基板、以及设置在所述液晶层另一侧的TFT基板；
    其中，所述TFT基板包括：
    一第一基板；
    一数据线，其设置在所述第一基板上；
    第一绝缘层，其设置在所述第一基板和所述数据线上；
    第一公共电极，其设置在所述第一绝缘层上，且位于所述数据线的上方并覆盖所述数据线；
    第二绝缘层，其设置在所述第一公共电极和所述第一绝缘层上；
    像素电极，其设置在所述第二绝缘层上。
  12. 如权利要求11所述的液晶显示面板，其中，所述像素电极延伸至所述第一公共电极上方。
  13. 如权利要求11所述的液晶显示面板，其中，所述CF基板包括：
    第二基板；
    黑色矩阵，其设置在所述第二基板上，且遮住所述第一公共电极；
    色阻层，其设置在第二基板上，所述色阻层包括呈矩阵排列的多个色阻块，所述多个色阻块通过所述黑色矩阵间隔开；
    第二公共电极，其设置在所述黑色矩阵以及所述色阻层上。
  14. 如权利要求13所述的液晶显示面板，其中，所述第二基板位于所述CF基板远离所述液晶层的一侧。
  15. 如权利要求13所述的液晶显示面板，其中，所述黑色矩阵的材料为不透光的金属氧化薄膜或树脂型的黑色光阻薄膜。
  16. 如权利要求13所述的液晶显示面板，其中，所述色阻层包括呈矩阵排列的多个红色色阻块、多个绿色色组块、以及多个蓝色色组块。
  17. 如权利要求11所述的液晶显示面板，其中，所述第一公共电极的材料为透明导电金属或透明导电金属氧化物。
  18. 如权利要求17所述的液晶显示面板，其中，所述像素电极的材料为氧化铟锡。
  19. 如权利要求11所述的液晶显示面板，其中，所述数据线的材料为高导电的金属材料。
  20. 如权利要求11所述的液晶显示面板，其中，所述第一绝缘层的材料为氧化硅和/或氮化硅，所述第二绝缘层的材料为氧化硅和/或氮化硅。
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