WO2018120568A1 - 一种显示面板及制程 - Google Patents

一种显示面板及制程 Download PDF

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Publication number
WO2018120568A1
WO2018120568A1 PCT/CN2017/083213 CN2017083213W WO2018120568A1 WO 2018120568 A1 WO2018120568 A1 WO 2018120568A1 CN 2017083213 W CN2017083213 W CN 2017083213W WO 2018120568 A1 WO2018120568 A1 WO 2018120568A1
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Prior art keywords
layer
high adhesion
adhesion metal
metal layer
display panel
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PCT/CN2017/083213
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English (en)
French (fr)
Inventor
陈猷仁
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US16/325,740 priority Critical patent/US20190206901A1/en
Publication of WO2018120568A1 publication Critical patent/WO2018120568A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Definitions

  • the present application relates to the field of display technologies, and more particularly to a display panel and a process.
  • the display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • Most of the displays on the market today are backlight-type displays, which include a display panel and a backlight module.
  • the working principle of the display panel is to place liquid crystal molecules in two parallel substrates, and apply driving voltages on the two substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • the thin film transistor display includes a display panel and a backlight module, and the display panel includes a color filter substrate (CF Substrate, also referred to as a color filter substrate) and a thin film transistor array substrate (Thin Film Transistor Substrate, TFT Substrate).
  • CF Substrate also referred to as a color filter substrate
  • TFT Substrate thin film transistor array substrate
  • a transparent electrode exists on the opposite inner side of the substrate.
  • a layer of liquid crystal molecules (LC) is sandwiched between the two substrates.
  • the display panel controls the orientation of the liquid crystal molecules by an electric field, changes the polarization state of the light, and achieves the purpose of display by the penetration and blocking of the optical path by the polarizing plate.
  • the technical problem to be solved by the present application is to provide a display for solving the problem of poor adhesion of the second layer of wires. Display panel.
  • the present application also provides a process using the display panel.
  • a display panel comprising:
  • An insulating layer, the insulating layer is disposed on the substrate;
  • the second layer of wires is disposed on the insulating layer, the lower portion of the second layer of wires includes a first high adhesion metal layer, and the upper portion of the second layer of wires includes a second high adhesion metal layer,
  • the middle of the two-layer wire includes an intermediate conductive layer, and the second layer of wire is drivingly coupled to the display panel source.
  • the thickness of the intermediate conductive layer is greater than the thickness of the first high adhesion metal layer and the second high adhesion metal layer.
  • the thickness of the intermediate conductive layer is greater than the thickness of the first high adhesion metal layer, and is also greater than the thickness of the second high adhesion metal layer, and the intermediate conductive layer can adopt a metal with lower resistance characteristics, and the thickness is larger, which can effectively reduce the second layer of the panel.
  • the resistance and parasitic capacitance, the first high adhesion metal layer and the second high adhesion metal layer are made of a metal with good adhesion property, and the intermediate conductive layer is connected to the upper and lower layers through the first high adhesion metal layer and the second high adhesion metal layer.
  • the adhesiveness is better, and the intermediate conductive layer is not easily peeled off from the upper and lower layers.
  • the first high adhesion metal layer and the second high adhesion metal layer are mainly used for the adhesion thickness to the upper and lower layers to save cost.
  • the width of the first high adhesion metal layer is the same as the width of the bottom of the intermediate conductive layer
  • the width of the second high adhesion metal layer is the same as the width of the top of the intermediate conductive layer.
  • the width of the bottom of the intermediate conductive layer is larger than that of the top, which is convenient to manufacture, stable in formation, and high in yield.
  • the width of the first high adhesion metal layer is the same as the width of the bottom of the intermediate conductive layer, and the width of the second high adhesion metal layer is the same as the width of the top of the intermediate conductive layer.
  • the intermediate conductive layer has the largest contact area with the first high adhesion metal layer and the second high adhesion metal layer, and the adhesion effect is better, wherein the intermediate conductive layer is preferably trapezoidal, in particular isosceles trapezoid.
  • the intermediate conductive layer is made of copper, aluminum, silver, gold, chromium, molybdenum or an alloy of the above metals, and the first high adhesion metal layer and the second high adhesion metal layer are both made of molybdenum or molybdenum alloy.
  • Molybdenum or molybdenum alloy can achieve better adhesion, and can be better adhered to the metal of the intermediate conductive layer, and the other layer can be combined with other layers of the display panel such as photoresist layer, insulating layer and passivation layer (PV layer).
  • PV layer passivation layer
  • the second layer of wires comprises a source wire segment disposed in the thin film transistor; and the second layer wire is provided with a second high adhesion metal layer only in the source wire segment.
  • the source wire segment of the thin film transistor adopts a second layer of wires of a three-layer structure, and the other second layer wires adopt a wire of two layers of mechanism to reduce the thickness of the display panel.
  • the second layer of wires comprises a drain wire segment disposed on the thin film transistor; and the second layer of wires is provided with a second high adhesion metal layer in the drain wire segment.
  • the drain wire segment of the thin film transistor also uses a second layer of a three-layer wire, and the drain wire segment can also achieve good adhesion.
  • the display panel further includes a first layer of wires disposed between the substrate and the insulating layer, the first layer of wires being integrally covered with a third high adhesion metal layer and a fourth high adhesion metal layer
  • the first layer of wires includes a gate wire segment disposed on the thin film transistor, a corresponding semiconductor layer on the insulating layer, and a source wire segment of the separated thin film transistor disposed on both ends of the semiconductor layer and A drain wire segment is provided with a channel between the source wire segment and the drain wire segment, and the channel bottom is a semiconductor layer.
  • the first layer of the conductor is covered on the substrate, whether it is the gate wire segment of the thin film transistor or the connection portion between the row scan driving and the gate of the thin film transistor, and the three-layer structure is adopted to improve the performance of the thin film transistor and the overall adhesion of the display panel. Better adhesion, improve the quality of the first layer of wire, improve product yield, drop Low production costs.
  • the second layer of wires is entirely covered with a first high adhesion metal layer and a second high adhesion metal layer.
  • the second layer of wires adopts a three-layer structure to improve the performance of the thin film transistor, and the overall viscosity of the display panel is better, the quality of the second layer of wires is improved, the yield of the product is improved, and the production cost is lowered.
  • the present application also discloses a display panel process, including the steps of:
  • An insulating layer is disposed on the substrate,
  • the first high adhesion metal layer, the intermediate conductive layer, and the second high adhesion metal layer are etched to form a second layer of wires.
  • the first high adhesion metal layer, the intermediate conductive layer and the second high adhesion metal layer of the second layer of wires are successively disposed on the insulating layer, and then etched together to improve the quality of the second layer of wires, improve product yield, reduce production cost, and enhance
  • the adhesion of the second layer of wires to the insulating layer and other layers does not easily cause the second layer of wires to be peeled off and the other layers of the second layer of wires to be peeled off, wherein the first high adhesion metal layer and the second high adhesion metal layer are used.
  • the same material no need for additional raw materials, reduce raw material costs, storage costs, bill of materials does not need to add new materials, facilitate process management and procurement, no need for additional equipment to set the second high adhesion metal layer, can be the first high
  • the attached metal layer shares a set of equipment and no additional equipment and materials are required for post-etching.
  • step of providing an insulating layer on the substrate comprises the steps of:
  • An insulating layer is disposed on the first layer of wires.
  • a third high adhesion metal layer, a second intermediate conductive layer, and a fourth layer of the first layer of wires are sequentially disposed on the substrate High adhesion metal layer, and then etched together to improve the quality of the first layer of wire, improve product yield, reduce production costs, enhance the adhesion of the first layer of wire to the substrate and other layers, and not easily lead to the first layer of wire stripping and
  • the other layers connected to the first layer of wires are peeled off, and the overall viscosity of the display panel is better.
  • the second layer of conductors coupled to the source and the source are driven by a three-layer structure, which is a first high adhesion metal layer, an intermediate conductive layer and a second high adhesion metal layer connected to the insulating layer from bottom to top.
  • the intermediate conductive layer can adopt a metal with lower resistance characteristics, effectively reducing the resistance and parasitic capacitance of the second layer of the display panel, and the first high adhesion metal layer and the second high adhesion metal layer of the second layer conductor are used for adhesion performance.
  • the intermediate conductive layer can be adhered and fixed to the first high adhesion metal layer and the second high adhesion metal layer, and the intermediate conductive layer can also pass through the first high adhesion metal layer and the second high adhesion metal layer Sticking and fixing with the upper and lower layers, the adhesive viscosity is better, and it is not easy to cause the intermediate conductive layer to be peeled off from the upper and lower layers, that is, the electrical properties of the second layer of the display panel can be well satisfied, and the upper and lower layers are well adhered. Fixed, improving product yield and reducing production costs.
  • FIG. 1 is a schematic cross-sectional view showing a second layer of a conductor of a display panel according to an embodiment of the present application
  • FIG. 2 is a partial schematic view of a display panel according to an embodiment of the present application.
  • FIG. 3 is another schematic cross-sectional view of a second layer of a display panel of the embodiment of the present application.
  • FIG. 4 is another schematic view of a portion of a display panel according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a thin film transistor of a display panel according to an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a thin film transistor and upper and lower layers of a display panel according to an embodiment of the present application
  • FIG. 7 is another schematic diagram of a thin film transistor of a display panel according to an embodiment of the present application.
  • FIG. 8 is a schematic diagram of a second layer conductor of a display panel according to an embodiment of the present application.
  • FIG. 9 is another schematic diagram of a second layer of wires of a display panel according to an embodiment of the present application.
  • FIG. 10 is a schematic diagram of a second layer of wires of a display panel according to an embodiment of the present application.
  • FIG. 11 is still another schematic diagram of a thin film transistor of a display panel according to an embodiment of the present application.
  • FIG. 12 is another schematic diagram of a thin film transistor and upper and lower layers of a display panel according to an embodiment of the present application.
  • FIG. 13 is a schematic diagram of a process of a display panel according to an embodiment of the present application.
  • FIG. 14 is another schematic diagram of a display panel process according to an embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise specifically defined and defined. Connected, or connected in one piece; it can be a mechanical connection or an electrical connection; it can be directly connected, It can also be connected indirectly through an intermediate medium, which can be the internal communication between two components.
  • an intermediate medium which can be the internal communication between two components.
  • FIGS. 1 through 14 A display panel and a process of an embodiment of the present application will be described below with reference to FIGS. 1 through 14.
  • the display panel includes a substrate 20, an insulating layer 50, and a second layer of wires 60.
  • the insulating layer 50 is disposed on the substrate 20, and the second The layer conductor 60 is disposed on the insulating layer 50, the lower portion of the second layer conductor 60 includes an adhesion metal layer 11, and the upper portion of the second layer conductor 60 includes a conductive layer 12, and the second layer conductor 60 and the source of the display panel Drive coupling.
  • the second layer of conductors 60 which are coupled to the source and the source, are in a two-layer structure, and are an adhesion metal layer 11 and a conductive layer 12 connected to the insulating layer 50 from bottom to top.
  • the conductive layer 12 adopts a metal with lower resistance characteristics, which effectively reduces the resistance and parasitic capacitance of the second layer of the conductive layer 60 of the display panel.
  • the second layer of the conductive layer 60 adheres to the metal layer 11 and uses a metal with better adhesion properties, so that the conductive layer 12 can It is well adhered to the first high adhesion metal layer 61, and the conductive layer 12 can also be adhered and fixed to the insulating layer 50 through the adhesion metal layer 11, and the adhesiveness is better, and the conductive layer 12 and the insulating layer 50 are not easily peeled off. That is, the electrical performance of the second layer of the conductor 60 of the display panel can be well satisfied, and the insulation layer 50 can be adhered and fixed well, thereby improving the product yield and reducing the production cost.
  • the display panel includes a display panel including: a substrate 20; an insulating layer 50 disposed on the substrate 20; and the insulating layer a second layer of conductors 60 on the 50, the lower portion of the second layer of conductors 60 includes a first high adhesion metal layer 61, and the upper portion of the second layer of conductors 60 includes a second high adhesion metal layer 62, the second layer of conductors 60
  • the middle includes an intermediate conductive layer 63 that is drivingly coupled to the display panel source.
  • the second layer of conductors 60 which are coupled to the source and the source, are in a three-layer structure.
  • the first high adhesion metal layer 61, the intermediate conductive layer 63 and the second high adhesion metal layer 62 are connected to the insulating layer 50 from bottom to top.
  • the intermediate conductive layer 63 can adopt a metal having a lower resistance characteristic, effectively reducing the resistance and parasitic capacitance of the second layer conductor 60 of the display panel, and the first high adhesion metal layer 61 and the second high adhesion metal layer 62 of the second layer conductor 60.
  • the metal with better adhesion property is used, so that the intermediate conductive layer 63 can be adhered and fixed to the first high adhesion metal layer 61 and the second high adhesion metal layer 62, and the intermediate conductive layer 63 can also pass the first high adhesion.
  • the metal layer 61 and the second high adhesion metal layer 62 are adhered and fixed to the upper and lower layers, and the adhesiveness is better, and the intermediate conductive layer 63 is not easily peeled off from the upper and lower layers, that is, the electricity of the second layer conductor 60 of the display panel can be well satisfied.
  • Sexual performance, and good adhesion to the upper and lower layers improve product yield and reduce production costs.
  • the display panel includes: a substrate 20; an insulating layer 50 disposed on the substrate 20; and a second layer of wires 60 disposed on the insulating layer 50,
  • the lower portion of the second layer conductor 60 includes a first high adhesion metal layer 61
  • the upper portion of the second layer conductor 60 includes a second high adhesion metal layer 62
  • the second layer conductor 60 includes an intermediate conductive layer 63
  • the second layer Wire 60 is drivingly coupled to the display panel source.
  • the thickness of the intermediate conductive layer 63 is greater than the thickness of the first high adhesion metal layer 61 and the second high adhesion metal layer 62.
  • the thickness of the intermediate conductive layer 63 is greater than the thickness of the first high adhesion metal layer 61 and also greater than the thickness of the second high adhesion metal layer 62.
  • the intermediate conductive layer 63 can be made of a metal having a lower resistance characteristic, and the thickness can be more effectively reduced.
  • the resistance and parasitic capacitance of the second layer of the wire 60, the first high adhesion metal layer 61 and the second high adhesion metal layer 62 are made of a metal having a good adhesion property, and the intermediate conductive layer 63 passes through the first high adhesion metal layer 61 and the second
  • the high adhesion metal layer 62 is connected to the upper and lower layers, and has better adhesiveness, and the intermediate conductive layer 63 is not easily peeled off from the upper and lower layers.
  • the first high adhesion metal layer 61 and the second high adhesion metal layer 62 are mainly used to adhere to the upper and lower layers. Small stick thickness can save costs.
  • the thickness of the intermediate conductive layer 63 may be greater than the thickness of the first high adhesion metal layer 61 plus the second high adhesion metal layer 62.
  • the width of the bottom of the intermediate conductive layer 63 is greater than the top, the width of the first high adhesion metal layer 61 is the same as the width of the bottom of the intermediate conductive layer 63, and the width and the middle of the second high adhesion metal layer 62.
  • the top of the electrical layer 63 has the same width.
  • the width of the bottom of the intermediate conductive layer 63 is larger than that of the top, which is convenient for fabrication, stable in formation, and high in yield.
  • the width of the first high adhesion metal layer 61 is the same as the width of the bottom of the intermediate conductive layer 63, and the width of the second high adhesion metal layer 62 is at the top of the intermediate conductive layer 63. The width is the same and the fabrication is convenient.
  • the intermediate conductive layer 63 has the largest contact area with the first high adhesion metal layer 61 and the second high adhesion metal layer 62, and the adhesion effect is better.
  • the intermediate conductive layer 63 is preferably trapezoidal, especially an isosceles trapezoid.
  • the intermediate conductive layer 63 is made of copper, aluminum, silver, gold, chromium, molybdenum or an alloy of the above metals
  • the first high adhesion metal layer 61 and the second high adhesion metal layer 62 are both molybdenum or molybdenum. alloy.
  • Copper, aluminum, silver, gold, chromium, molybdenum or alloys of the above metals have good electrical conductivity and low electrical resistance properties, and can meet the requirements of display panels.
  • the molybdenum or molybdenum alloy can achieve better adhesion, and can be better adhered to the metal of the intermediate conductive layer 63, and the other side can be combined with other layers of the display panel such as the photoresist layer, the insulating layer 50, and the passivation layer 70 ( PV layer) and other good adhesion and fixation, molybdenum or molybdenum alloy is convenient to select materials, and the production technology is mature.
  • the display panel of the embodiment of FIG. 5, FIG. 6, and FIG. 8 includes: a substrate 20; an insulating layer 50 disposed on the substrate 20; and the insulating layer a second layer of conductors 60 on the 50, the lower portion of the second layer of conductors 60 includes a first high adhesion metal layer 61, and the upper portion of the second layer of conductors 60 includes a second high adhesion metal layer 62, the second layer of conductors 60
  • the middle includes an intermediate conductive layer 63 that is drivingly coupled to the display panel source.
  • the second layer of wires 60 includes a source wire segment 44 disposed on the thin film transistor 40; a data line wire segment connected to the source wire segment 44, and a drain wire segment 45 of the thin film transistor 40.
  • the second layer of conductors 60 is provided with a second, high adhesion metal layer 62 only in the source conductor segments 44.
  • the source wire 44 of the thin film transistor 40 adopts a three-layered second layer wire 60 to improve the adhesive property of the source wire segment 44 of the thin film transistor 40, and the other second layer wire 60 uses a two-layer wire to reduce The thickness of the display panel.
  • the display panel includes: a substrate 20; an insulating layer 50 disposed on the substrate 20; and a second layer disposed on the insulating layer 50.
  • the wire 60, the lower portion of the second layer wire 60 includes a first high adhesion metal layer 61, the upper portion of the second layer wire 60 includes a second high adhesion metal layer 62, and the second layer wire 60 includes an intermediate conductive layer 63 therebetween.
  • the second layer of wires 60 is drivingly coupled to the display panel source.
  • the second layer of wires 60 includes a drain wire segment 45 disposed on the thin film transistor 40; the second layer of wire 60 is disposed with a second high adhesion metal layer 62 at the drain wire segment 45.
  • the drain wire segment 45 of the thin film transistor 40 also employs a second layer of wire 60 of a three-layer structure, and the drain wire segment 45 also achieves good adhesion.
  • the second layer of wires 60 may also include a source wire segment 44 disposed on the thin film transistor 40; the second layer of wire 60 is provided with a second high adhesion metal layer 62 in the source wire segment 44.
  • the display panel includes: a substrate 20; an insulating layer 50 disposed on the substrate 20; and a second layer disposed on the insulating layer 50.
  • the wire 60, the lower portion of the second layer wire 60 includes a first high adhesion metal layer 61, the upper portion of the second layer wire 60 includes a second high adhesion metal layer 62, and the second layer wire 60 includes an intermediate conductive layer 63 therebetween.
  • the second layer of wires 60 is drivingly coupled to the display panel source.
  • the second layer of wires 60 is entirely covered with a first high adhesion metal layer 61 and a second high adhesion metal layer 62.
  • the second layer of conductors 60 adopts a three-layer structure to improve the performance of the thin film transistor 40.
  • the overall viscosity of the display panel is better, the quality of the second layer of the conductor 60 is improved, the product yield is improved, and the production cost is reduced.
  • the display panel comprises: a substrate 20; an insulating layer 50 disposed on the substrate 20; a second layer of wires 60 disposed on the insulating layer 50, the lower portion of the second layer of wires 60 includes a first high adhesion metal layer 61, and the upper portion of the second layer of wires 60 includes a second high adhesion metal layer 62.
  • the second layer of conductors 60 includes an intermediate conductive layer 63 intermediately coupled to the display panel source.
  • the display panel further includes a first layer of wires 30 disposed between the substrate 20 and the insulating layer 50, the first layer of wires 30 being entirely covered with a third high adhesion metal layer and Four
  • the first layer of the wire 30 includes a gate wire segment disposed on the thin film transistor 40.
  • the corresponding gate 41 of the insulating layer 50 is provided with a semiconductor layer 43.
  • the semiconductor layer 43 is provided on both ends thereof.
  • the source wire segment 44 and the drain wire segment 45 of the divided thin film transistor 40 are provided with a channel 46 between the source wire segment 44 and the drain wire segment 45, and the bottom of the channel 46 is a semiconductor layer 43.
  • the substrate 20 is entirely covered with the first layer of wires 30, whether it is the gate wire segment of the thin film transistor 40 or the connection portion of the row scan driving and the gate electrode 41 of the thin film transistor 40, and the three-layer structure is adopted to improve the performance of the thin film transistor 40.
  • the overall viscosity of the display panel is better, the quality of the first layer of the conductor 30 is improved, the yield of the product is improved, and the production cost is reduced.
  • the second layer of wires 60 is entirely covered with a first high adhesion metal layer 61 and a second high adhesion metal layer 62.
  • the second layer of conductors 60 adopts a three-layer structure to improve the performance of the thin film transistor 40.
  • the overall viscosity of the display panel is better, the quality of the second layer of the conductor 60 is improved, the product yield is improved, and the production cost is reduced.
  • the second layer of wires 60 may be provided with the second high adhesion metal layer 62 only in the source wire segment 44, and the second layer wire 60 may also be provided with the second highest height only in the drain wire segment 45.
  • the second layer of wires 62 may also be provided with a second high adhesion metal layer 62 only in the source wire segment 44 and the drain wire segment 45.
  • the thickness of the intermediate conductive layer 63 is greater than the thickness of the first high adhesion metal layer 61 and the second high adhesion metal layer 62.
  • the thickness of the intermediate conductive layer 63 is greater than the thickness of the first high adhesion metal layer 61 and also greater than the thickness of the second high adhesion metal layer 62.
  • the intermediate conductive layer 63 can be made of a metal having a lower resistance characteristic, and the thickness can be more effectively reduced.
  • the resistance and parasitic capacitance of the second layer of the wire 60, the first high adhesion metal layer 61 and the second high adhesion metal layer 62 are made of a metal having a good adhesion property, and the intermediate conductive layer 63 passes through the first high adhesion metal layer 61 and the second
  • the high adhesion metal layer 62 is connected to the upper and lower layers, and has better adhesiveness, and the intermediate conductive layer 63 is not easily peeled off from the upper and lower layers.
  • the first high adhesion metal layer 61 and the second high adhesion metal layer 62 are mainly used to adhere to the upper and lower layers. Small stick thickness can save costs.
  • the thickness of the intermediate conductive layer 63 may be greater than the thickness of the first high adhesion metal layer 61 plus the second high adhesion metal layer 62.
  • the bottom width of the intermediate conductive layer 63 is greater than the top, the first high adhesion metal layer 61
  • the width is the same as the width of the bottom of the intermediate conductive layer 63
  • the width of the second high adhesion metal layer 62 is the same as the width of the top of the intermediate conductive layer 63.
  • the width of the bottom of the intermediate conductive layer 63 is larger than that of the top, which is convenient for fabrication, stable in formation, and high in yield.
  • the width of the first high adhesion metal layer 61 is the same as the width of the bottom of the intermediate conductive layer 63
  • the width of the second high adhesion metal layer 62 is at the top of the intermediate conductive layer 63. The width is the same and the fabrication is convenient.
  • the intermediate conductive layer 63 has the largest contact area with the first high adhesion metal layer 61 and the second high adhesion metal layer 62, and the adhesion effect is better.
  • the intermediate conductive layer 63 is preferably trapezoidal, especially an isosceles trapezoid.
  • the intermediate conductive layer 63 is made of copper, aluminum, silver, gold, chromium, molybdenum or an alloy of the above metals
  • the first high adhesion metal layer 61 and the second high adhesion metal layer 62 are both molybdenum or molybdenum. alloy.
  • Copper, aluminum, silver, gold, chromium, molybdenum or alloys of the above metals have good electrical conductivity and low electrical resistance properties, and can meet the requirements of display panels.
  • the molybdenum or molybdenum alloy can achieve better adhesion, and can be better adhered to the metal of the intermediate conductive layer 63, and the other side can be combined with other layers of the display panel such as the photoresist layer, the insulating layer 50, and the passivation layer 70 ( PV layer) and other good adhesion and fixation, molybdenum or molybdenum alloy is convenient to select materials, and the production technology is mature.
  • the first layer of wires 30 can use the structure of the second layer of wires 60.
  • the present application further discloses a display panel process, including the steps of:
  • a first high adhesion metal layer, an intermediate conductive layer and a second high layer of the second layer of wires are sequentially disposed on the insulating layer Adhering the metal layer and then etching together to improve the quality of the second layer of wire, improve product yield, reduce production cost, enhance the adhesion of the second layer of wire to the insulating layer and other layers, and not easily lead to the second layer of wire stripping and
  • the other layers connected to the second layer of wires are stripped, wherein the first high adhesion metal layer and the second high adhesion metal layer are made of the same material, no additional raw materials are needed, the raw material cost and the storage cost are reduced, and the bill of materials does not need to be added with new ones.
  • Material, easy process management and procurement, no need for additional equipment to set the second high adhesion metal layer can share a set of equipment with the first high adhesion metal layer, and no additional equipment and materials are needed for post etching.
  • step of providing an insulating layer on the substrate comprises the steps of:
  • An insulating layer is disposed on the first layer of wires.
  • the third high adhesion metal layer, the second intermediate conductive layer and the fourth high adhesion metal layer of the first layer of wires are sequentially disposed on the substrate, and then etched together to improve the quality of the first layer of wires, improve product yield, and reduce production cost.
  • the adhesion of the first layer of wires to the substrate and other layers is enhanced, and the peeling of the first layer of wires and the peeling of other layers connected to the first layer of wires are not easily caused, and the overall adhesiveness of the display panel is better.
  • the first layer of wires is a scan line of the display panel
  • the second layer of wires is a data line of the display panel.
  • the material of the substrate may be glass, plastic or the like.
  • the display panel may include, for example, a liquid crystal panel, a plasma panel, an OLED panel, a QLED panel, and the like.
  • the liquid crystal panel includes an array substrate and a color filter substrate (CF), and the array substrate and the color
  • the film substrate is oppositely disposed, and a liquid crystal and a photo spacer (PS) are disposed between the array substrate and the color filter substrate, and a thin film transistor (TFT) is disposed on the array substrate, and color filter is disposed on the color filter substrate.
  • PS liquid crystal and a photo spacer
  • TFT thin film transistor
  • the color filter substrate may include a TFT array
  • the color film and the TFT array may be formed on the same substrate, and the array may substantially include a color filter layer.
  • the display panel of the present application may be a curved type panel.

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Abstract

公开一种显示面板及制程，显示面板包括：基板（20）；绝缘层（50），绝缘层（50）设置在基板（20）上；第二层导线（60），第二层导线（60）设置在绝缘层（50）上，第二层导线（60）下部包括第一高附着金属层（61），第二层导线（60）上部包括第二高附着金属层（62），第二层导线（60）中间包括中间导电层（63），第二层导线（60）与显示面板源极驱动耦合。

Description

一种显示面板及制程 【技术领域】
本申请涉及显示技术领域，更具体的说，涉及一种显示面板及制程。
【背景技术】
显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的显示器大部分为背光型显示器，其包括显示面板及背光模组(backlight module)。显示面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管显示器包含显示面板和背光模组，显示面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)和薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFT Substrate)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(Liquid Crystal，LC)。显示面板是通过电场对液晶分子取向的控制，改变光的偏振状态，并藉由偏光板实现光路的穿透与阻挡，实现显示的目的。
随着薄膜晶体管液晶显示器逐渐往超大尺寸、高驱动频率、高分辨率等方面发展，薄膜晶体管液晶显示器在制作时，高质量的导线制程技术已经成为主宰，为了应付未来高频率与高分辨率的液晶显示器规格，如何有效地降低面板导线的电阻与寄生电容日趋重要，而目前第二层导线制程导线金属结构易发生导线粘粘不佳，导致金属膜剥离等问题。
【发明内容】
本申请所要解决的技术问题是提供一种解决第二层导线粘粘不佳的一种显 示面板。
此外，本申请还提供一种采用所述显示面板制程。
本申请的目的是通过以下技术方案来实现的：
一种显示面板，包括：
基板；
绝缘层，所述绝缘层设置在基板上；
第二层导线，所述第二层导线设置在绝缘层上，所述第二层导线下部包括第一高附着金属层，所述第二层导线上部包括第二高附着金属层，所述第二层导线中间包括中间导电层，所述第二层导线与显示面板源极驱动耦合。
其中，所述中间导电层的厚度大于第一高附着金属层和第二高附着金属层的厚度。
中间导电层的厚度大于第一高附着金属层的厚度，也大于第二高附着金属层的厚度，中间导电层可以采用较低电阻特性的金属，厚度更大能有效地降低面板第二层导线的电阻与寄生电容，第一高附着金属层和第二高附着金属层则采用附着性能较好的金属，中间导电层通过第一高附着金属层和第二高附着金属层与上下层连接，粘粘性更好，不容易导致中间导电层与上下层剥离，第一高附着金属层和第二高附着金属层主要是用来与上下层粘粘厚度小可以节约成本。
其中，所述中间导电层底部宽度大于顶部，所述第一高附着金属层宽度与中间导电层底部宽度相同，所述第二高附着金属层宽度与中间导电层顶部宽度相同。
中间导电层底部宽度大于顶部，方便制作，成型稳定，良品率高，第一高附着金属层宽度与中间导电层底部宽度相同，第二高附着金属层宽度与中间导电层顶部宽度相同，制作方便，中间导电层与第一高附着金属层和第二高附着金属层接触面积最大，粘粘效果更好，其中中间导电层优选梯形，特别是等腰梯形。
其中，所述中间导电层采用铜、铝、银、金、铬、钥或上述金属的合金制成，所述第一高附着金属层和第二高附着金属层均采用钼或钼合金。
铜、铝、银、金、铬、钥或上述金属的合金具有较好的导电性能和较低的电阻特性，能满足显示面板的需求。钼或钼合金能实现较好的附着性，一边能与中间导电层的金属较好的粘粘，另一边能与显示面板的其他层如光阻层、绝缘层、钝化层(PV层)等较好的粘粘固定，钼或钼合金选材方便，制作技术成熟。不需要额外的原材料，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，不需要额外的设备设置第二高附着金属层，可以与第一高附着金属层共用一套设备，后期蚀刻也不需要额外的设备和材料。
其中，所述第二层导线包括设置在薄膜晶体管的源极导线段；所述第二层导线仅在源极导线段设置有第二高附着金属层。
薄膜晶体管的源极导线段采用三层结构的第二层导线，其他第二层导线则采用两层机构的导线，降低显示面板的厚度。
其中，所述第二层导线包括设置在薄膜晶体管的漏极导线段；所述第二层导线在漏极导线段设置有第二高附着金属层。
薄膜晶体管的漏极导线段也采用三层结构的第二层导线，漏极导线段也能取得很好的粘粘性。
其中，所述显示面板还包括第一层导线，所述第一层导线设置在基板和绝缘层之间，所述第一层导线整体覆盖有第三高附着金属层和第四高附着金属层，所述第一层导线包括设置在薄膜晶体管的栅极导线段，所述绝缘层上对应栅极设有半导体层，所述半导体层两端上设有分隔的薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和漏极导线段之间设有沟道，所述沟道底部为半导体层。
基板上整体覆盖第一层导线，不管是薄膜晶体管的栅极导线段，还是行扫描驱动与薄膜晶体管的栅极的连接段，都采用三层结构，提高薄膜晶体管的性能，显示面板的整体粘粘性更好，改善第一层导线的品质，提升产品良率，降 低生产成本。
其中，所述第二层导线整体覆盖有第一高附着金属层和第二高附着金属层。
第二层导线都采用三层结构，提高薄膜晶体管的性能，显示面板的整体粘粘性更好，改善第二层导线的品质，提升产品良率，降低生产成本。
根据本申请的另一个方面，本申请还公开了一种显示面板制程，包括步骤：
在基板上设置绝缘层，
在绝缘层上设置第一高附着金属层；
在第一高附着金属层上设置中间导电层；
在中间导电层上设置第二高附着金属层；
蚀刻第一高附着金属层、中间导电层和第二高附着金属层形成第二层导线。
绝缘层上先后设置第二层导线的第一高附着金属层、中间导电层和第二高附着金属层，然后一起蚀刻，改善第二层导线的品质，提升产品良率，降低生产成本，增强了第二层导线与绝缘层和其他层的粘粘性，不容易导致第二层导线剥离和与第二层导线连接的其他层剥离，其中第一高附着金属层和第二高附着金属层采用同样的材料，不需要额外的原材料，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，不需要额外的设备设置第二高附着金属层，可以与第一高附着金属层共用一套设备，后期蚀刻也不需要额外的设备和材料。
其中，所述在基板上设置绝缘层包括步骤：
在基板上设置第三高附着金属层；
在第三高附着金属层上设置第二中间导电层；
在第二中间导电层上设置第四高附着金属层；
蚀刻第三高附着金属层、第二中间导电层和第四高附着金属层形成第一层导线；
在第一层导线上设置绝缘层。
基板上先后设置第一层导线的第三高附着金属层、第二中间导电层和第四 高附着金属层，然后一起蚀刻，改善第一层导线的品质，提升产品良率，降低生产成本，增强了第一层导线与基板和其他层的粘粘性，不容易导致第一层导线剥离和与第一层导线连接的其他层剥离，显示面板的整体粘粘性更好。
与现有技术相比，本申请的技术效果是：
显示面板与源极驱动耦合的第二层导线采用三层结构，从下往上依次为与绝缘层连接的第一高附着金属层、中间导电层和第二高附着金属层。中间导电层可以采用较低电阻特性的金属，有效地降低显示面板第二层导线的电阻与寄生电容，第二层导线的第一高附着金属层和第二高附着金属层则采用附着性能较好的金属，这样中间导电层可以很好的与第一高附着金属层和第二高附着金属层粘粘固定，同时中间导电层还可以通过第一高附着金属层和第二高附着金属层与上下层粘粘固定，粘粘性更好，不容易导致中间导电层与上下层剥离，即能很好的满足显示面板第二层导线的电性性能，又能很好的与上下层粘粘固定，提升产品良率，降低生产成本。
【附图说明】
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请实施例一种显示面板的第二层导线剖面示意图；
图2是本申请实施例一种显示面板的部分示意图；
图3是本申请实施例一种显示面板的第二层导线另一剖面示意图；
图4是本申请实施例一种显示面板的部分另一示意图；
图5是本申请实施例一种显示面板的薄膜晶体管的示意图；
图6是本申请实施例一种显示面板的薄膜晶体管及上下层的示意图；
图7是本申请实施例一种显示面板的薄膜晶体管的另一示意图；
图8是本申请实施例一种显示面板的第二层导线示意图；
图9是本申请实施例一种显示面板的第二层导线另一示意图；
图10是本申请实施例一种显示面板的第二层导线再一示意图；
图11是本申请实施例一种显示面板的薄膜晶体管的再一示意图；
图12是本申请实施例一种显示面板的薄膜晶体管及上下层的另一示意图；
图13是本申请实施例一种显示面板制程的示意图；
图14是本申请实施例一种显示面板制程的另一示意图。
【具体实施方式】
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连， 也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本申请作进一步说明。
下面参考图1至图14描述本申请实施例的显示面板及制程。
如图1和图2所示，在图1和图2的实施例中显示面板包括基板20、绝缘层50和第二层导线60，所述绝缘层50设置在基板20上，所述第二层导线60设置在绝缘层50上，所述第二层导线60下部包括附着金属层11，所述第二层导线60上部包括导电层12，所述第二层导线60与显示面板的源极驱动耦合。显示面板与源极驱动耦合的第二层导线60采用二层结构，从下往上依次为与绝缘层50连接的附着金属层11、导电层12。导电层12采用较低电阻特性的金属，有效地降低显示面板第二层导线60的电阻与寄生电容，第二层导线60附着金属层11则采用附着性能较好的金属，这样导电层12可以很好的与第一高附着金属层61粘粘固定，同时导电层12还可以通过附着金属层11与绝缘层50粘粘固定，粘粘性更好，不容易导致导电层12与绝缘层50剥离，即能很好的满足显示面板第二层导线60的电性性能，又能很好的与绝缘层50粘粘固定，提升产品良率，降低生产成本。
如图3和图4所示，在图3和图4的实施例中显示面板包括一种显示面板，包括：基板20；设置在所述基板20上的绝缘层50；设置在所述绝缘层50上的第二层导线60，所述第二层导线60下部包括第一高附着金属层61，所述第二层导线60上部包括第二高附着金属层62，所述第二层导线60中间包括中间导电层63，所述第二层导线60与显示面板源极驱动耦合。
显示面板与源极驱动耦合的第二层导线60采用三层结构，从下往上依次为与绝缘层50连接的第一高附着金属层61、中间导电层63和第二高附着金属层62。中间导电层63可以采用较低电阻特性的金属，有效地降低显示面板第二层导线60的电阻与寄生电容，第二层导线60的第一高附着金属层61和第二高附着金属层62则采用附着性能较好的金属，这样中间导电层63可以很好的与第一高附着金属层61和第二高附着金属层62粘粘固定，同时中间导电层63还可以通过第一高附着金属层61和第二高附着金属层62与上下层粘粘固定，粘粘性更好，不容易导致中间导电层63与上下层剥离，即能很好的满足显示面板第二层导线60的电性性能，又能很好的与上下层粘粘固定，提升产品良率，降低生产成本。
如图4所示，在图4的实施例中显示面板包括：基板20；设置在所述基板20上的绝缘层50；设置在所述绝缘层50上的第二层导线60，所述第二层导线60下部包括第一高附着金属层61，所述第二层导线60上部包括第二高附着金属层62，所述第二层导线60中间包括中间导电层63，所述第二层导线60与显示面板源极驱动耦合。
其中，所述中间导电层63的厚度大于第一高附着金属层61和第二高附着金属层62的厚度。中间导电层63的厚度大于第一高附着金属层61的厚度，也大于第二高附着金属层62的厚度，中间导电层63可以采用较低电阻特性的金属，厚度更大能有效地降低面板第二层导线60的电阻与寄生电容，第一高附着金属层61和第二高附着金属层62则采用附着性能较好的金属，中间导电层63通过第一高附着金属层61和第二高附着金属层62与上下层连接，粘粘性更好，不容易导致中间导电层63与上下层剥离，第一高附着金属层61和第二高附着金属层62主要是用来与上下层粘粘厚度小可以节约成本。可选的，中间导电层63的厚度可以大于第一高附着金属层61加第二高附着金属层62的厚度。
其中，所述中间导电层63底部宽度大于顶部，所述第一高附着金属层61宽度与中间导电层63底部宽度相同，所述第二高附着金属层62宽度与中间导 电层63顶部宽度相同。中间导电层63底部宽度大于顶部，方便制作，成型稳定，良品率高，第一高附着金属层61宽度与中间导电层63底部宽度相同，第二高附着金属层62宽度与中间导电层63顶部宽度相同，制作方便，中间导电层63与第一高附着金属层61和第二高附着金属层62接触面积最大，粘粘效果更好，其中中间导电层63优选梯形，特别是等腰梯形。
其中，所述中间导电层63采用铜、铝、银、金、铬、钥或上述金属的合金制成，所述第一高附着金属层61和第二高附着金属层62均采用钼或钼合金。铜、铝、银、金、铬、钥或上述金属的合金具有较好的导电性能和较低的电阻特性，能满足显示面板的需求。钼或钼合金能实现较好的附着性，一边能与中间导电层63的金属较好的粘粘，另一边能与显示面板的其他层如光阻层、绝缘层50、钝化层70(PV层)等较好的粘粘固定，钼或钼合金选材方便，制作技术成熟。不需要额外的原材料，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，不需要额外的设备设置第二高附着金属层62，可以与第一高附着金属层61共用一套设备，后期蚀刻也不需要额外的设备和材料。
如图5、图6和图8所示，在图5、图6和图8的实施例中显示面板包括：基板20；设置在所述基板20上的绝缘层50；设置在所述绝缘层50上的第二层导线60，所述第二层导线60下部包括第一高附着金属层61，所述第二层导线60上部包括第二高附着金属层62，所述第二层导线60中间包括中间导电层63，所述第二层导线60与显示面板源极驱动耦合。
其中，所述第二层导线60包括设置在薄膜晶体管40的源极导线段44；与源极导线段44连接的数据线导线段，以及薄膜晶体管40的漏极导线段45。所述第二层导线60仅在源极导线段44设置有第二高附着金属层62。薄膜晶体管40的源极导线44段采用三层结构的第二层导线60，提高薄膜晶体管40的源极导线段44的粘粘性能，其他第二层导线60则采用两层机构的导线，降低显示面板的厚度。
如图7和图9所示，在图7和图9的实施例中显示面板包括：基板20；设置在所述基板20上的绝缘层50；设置在所述绝缘层50上的第二层导线60，所述第二层导线60下部包括第一高附着金属层61，所述第二层导线60上部包括第二高附着金属层62，所述第二层导线60中间包括中间导电层63，所述第二层导线60与显示面板源极驱动耦合。
其中，所述第二层导线60包括设置在薄膜晶体管40的漏极导线段45；所述第二层导线60在漏极导线段45设置有第二高附着金属层62。薄膜晶体管40的漏极导线段45也采用三层结构的第二层导线60，漏极导线段45也能取得很好的粘粘性。当然所述第二层导线60也可以包括设置在薄膜晶体管40的源极导线段44；所述第二层导线60在源极导线44段设置有第二高附着金属层62。
如图7和图10所示，在图7和图10的实施例中显示面板包括：基板20；设置在所述基板20上的绝缘层50；设置在所述绝缘层50上的第二层导线60，所述第二层导线60下部包括第一高附着金属层61，所述第二层导线60上部包括第二高附着金属层62，所述第二层导线60中间包括中间导电层63，所述第二层导线60与显示面板源极驱动耦合。
其中，所述第二层导线60整体覆盖有第一高附着金属层61和第二高附着金属层62。第二层导线60都采用三层结构，提高薄膜晶体管40的性能，显示面板的整体粘粘性更好，改善第二层导线60的品质，提升产品良率，降低生产成本。
如图2至图3、图11至图12所示，在图2至图3、图11至图12的实施例中显示面板包括：基板20；设置在所述基板20上的绝缘层50；设置在所述绝缘层50上的第二层导线60，所述第二层导线60下部包括第一高附着金属层61，所述第二层导线60上部包括第二高附着金属层62，所述第二层导线60中间包括中间导电层63，所述第二层导线60与显示面板源极驱动耦合。
其中，所述显示面板还包括第一层导线30，所述第一层导线30设置在基板20和绝缘层50之间，所述第一层导线30整体覆盖有第三高附着金属层和第四 高附着金属层，所述第一层导线30包括设置在薄膜晶体管40的栅极导线段，所述绝缘层50上对应栅极41设有半导体层43，所述半导体层43两端上设有分隔的薄膜晶体管40的源极导线段44和漏极导线段45，所述源极导线段44和漏极导线段45之间设有沟道46，所述沟道46底部为半导体层43。基板20上整体覆盖第一层导线30，不管是薄膜晶体管40的栅极导线段，还是行扫描驱动与薄膜晶体管40的栅极41的连接段，都采用三层结构，提高薄膜晶体管40的性能，显示面板的整体粘粘性更好，改善第一层导线30的品质，提升产品良率，降低生产成本。
其中，所述第二层导线60整体覆盖有第一高附着金属层61和第二高附着金属层62。第二层导线60都采用三层结构，提高薄膜晶体管40的性能，显示面板的整体粘粘性更好，改善第二层导线60的品质，提升产品良率，降低生产成本。
可选的，所述第二层导线60可以仅在源极导线段44设置有第二高附着金属层62，所述第二层导线60也可以仅在漏极导线段45设置有第二高附着金属层62，所述第二层导线60还可以仅在源极导线段44和漏极导线段45设置有第二高附着金属层62。
其中，所述中间导电层63的厚度大于第一高附着金属层61和第二高附着金属层62的厚度。中间导电层63的厚度大于第一高附着金属层61的厚度，也大于第二高附着金属层62的厚度，中间导电层63可以采用较低电阻特性的金属，厚度更大能有效地降低面板第二层导线60的电阻与寄生电容，第一高附着金属层61和第二高附着金属层62则采用附着性能较好的金属，中间导电层63通过第一高附着金属层61和第二高附着金属层62与上下层连接，粘粘性更好，不容易导致中间导电层63与上下层剥离，第一高附着金属层61和第二高附着金属层62主要是用来与上下层粘粘厚度小可以节约成本。可选的，中间导电层63的厚度可以大于第一高附着金属层61加第二高附着金属层62的厚度。
其中，所述中间导电层63底部宽度大于顶部，所述第一高附着金属层61 宽度与中间导电层63底部宽度相同，所述第二高附着金属层62宽度与中间导电层63顶部宽度相同。中间导电层63底部宽度大于顶部，方便制作，成型稳定，良品率高，第一高附着金属层61宽度与中间导电层63底部宽度相同，第二高附着金属层62宽度与中间导电层63顶部宽度相同，制作方便，中间导电层63与第一高附着金属层61和第二高附着金属层62接触面积最大，粘粘效果更好，其中中间导电层63优选梯形，特别是等腰梯形。
其中，所述中间导电层63采用铜、铝、银、金、铬、钥或上述金属的合金制成，所述第一高附着金属层61和第二高附着金属层62均采用钼或钼合金。铜、铝、银、金、铬、钥或上述金属的合金具有较好的导电性能和较低的电阻特性，能满足显示面板的需求。钼或钼合金能实现较好的附着性，一边能与中间导电层63的金属较好的粘粘，另一边能与显示面板的其他层如光阻层、绝缘层50、钝化层70(PV层)等较好的粘粘固定，钼或钼合金选材方便，制作技术成熟。不需要额外的原材料，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，不需要额外的设备设置第二高附着金属层62，可以与第一高附着金属层61共用一套设备，后期蚀刻也不需要额外的设备和材料。
第一层导线30可以使用第二层导线60的结构。
根据本申请的另一个方面，如图13和图14所示，本申请还公开了一种显示面板制程，包括步骤：
S1：在基板上设置绝缘层，
S2：在绝缘层上设置第一高附着金属层；
S3：在第一高附着金属层上设置中间导电层；
S4：在中间导电层上设置第二高附着金属层；
S5：蚀刻第一高附着金属层、中间导电层和第二高附着金属层形成第二层导线。
绝缘层上先后设置第二层导线的第一高附着金属层、中间导电层和第二高 附着金属层，然后一起蚀刻，改善第二层导线的品质，提升产品良率，降低生产成本，增强了第二层导线与绝缘层和其他层的粘粘性，不容易导致第二层导线剥离和与第二层导线连接的其他层剥离，其中第一高附着金属层和第二高附着金属层采用同样的材料，不需要额外的原材料，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，不需要额外的设备设置第二高附着金属层，可以与第一高附着金属层共用一套设备，后期蚀刻也不需要额外的设备和材料。
其中，所述在基板上设置绝缘层包括步骤：
S1-1：在基板上设置第三高附着金属层；
S1-2：在第三高附着金属层上设置第二中间导电层；
S1-3：在第二中间导电层上设置第四高附着金属层；
S1-4：蚀刻第三高附着金属层、第二中间导电层和第四高附着金属层形成第一层导线；
S1-5：在第一层导线上设置绝缘层。
基板上先后设置第一层导线的第三高附着金属层、第二中间导电层和第四高附着金属层，然后一起蚀刻，改善第一层导线的品质，提升产品良率，降低生产成本，增强了第一层导线与基板和其他层的粘粘性，不容易导致第一层导线剥离和与第一层导线连接的其他层剥离，显示面板的整体粘粘性更好。
可选的，第一层导线为显示面板的扫描线，第二层导线为显示面板的数据线。
在上述实施例中，所述基板的材料可以选用玻璃、塑料等。
在上述实施例中，显示面板可例如包括液晶面板、等离子面板、OLED面板、QLED面板、等，以液晶面板为例，液晶面板包括阵列基板和彩膜基板(CF)，所述阵列基板与彩膜基板相对设置，所述阵列基板与彩膜基板之间设有液晶和间隔单元(photo spacer，PS)，所述阵列基板上设有薄膜晶体管(TFT)，彩膜基板上设有彩色滤光层。
在上述实施例中，彩膜基板可包括TFT阵列，彩膜及TFT阵列可形成于同一基板上，阵列基本可包括彩色滤光层。
在上述实施例中，本申请的显示面板可为曲面型面板。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (18)

  1. 一种显示面板，包括：
    基板；
    绝缘层，所述绝缘层设置在基板上；
    第二层导线，所述第二层导线设置在绝缘层上，所述第二层导线下部包括第一高附着金属层，所述第二层导线上部包括第二高附着金属层，所述第二层导线中间包括中间导电层，所述第二层导线与显示面板源极驱动耦合；
    所述显示面板还包括第一层导线，所述第一层导线设置在基板和绝缘层之间，所述第一层导线整体覆盖有第三高附着金属层和第四高附着金属层，所述第一层导线包括设置在薄膜晶体管的栅极导线段，所述绝缘层上对应栅极设有半导体层，所述半导体层两端上设有分隔的薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和漏极导线段之间设有沟道，所述沟道底部为半导体层；所述第二层导线整体覆盖有第一高附着金属层和第二高附着金属层。
    所述中间导电层的厚度大于第一高附着金属层和第二高附着金属层的厚度；所述中间导电层底部宽度大于顶部，所述第一高附着金属层宽度与中间导电层底部宽度相同，所述第二高附着金属层宽度与中间导电层顶部宽度相同；所述中间导电层采用铜、铝、银、金、铬、钥或上述金属的合金制成，所述第一高附着金属层和第二高附着金属层采用钼或钼合金。
  2. 一种显示面板，包括：
    基板；
    绝缘层，所述绝缘层设置在基板上；
    第二层导线，所述第二层导线设置在绝缘层上，所述第二层导线下部包括第一高附着金属层，所述第二层导线上部包括第二高附着金属层，所述第二层导线中间包括中间导电层，所述第二层导线与显示面板源极驱动耦合。
  3. 如权利要求2所述的一种显示面板，其中，所述中间导电层的厚度大于 第一高附着金属层和第二高附着金属层的厚度。
  4. 如权利要求2所述的一种显示面板，其中，所述中间导电层底部宽度大于顶部，所述第一高附着金属层宽度与中间导电层底部宽度相同，所述第二高附着金属层宽度与中间导电层顶部宽度相同。
  5. 如权利要求2所述的一种显示面板，其中，所述中间导电层采用铜、铝、银、金、铬、钥或上述金属的合金制成，所述第一高附着金属层和第二高附着金属层均采用钼或钼合金。
  6. 如权利要求2所述的一种显示面板，其中，所述第二层导线包括设置在薄膜晶体管的源极导线段；所述第二层导线仅在源极导线段设置有第二高附着金属层。
  7. 如权利要求2所述的一种显示面板，其中，所述第二层导线包括设置在薄膜晶体管的漏极导线段；所述第二层导线在漏极导线段设置有第二高附着金属层。
  8. 如权利要求2所述的一种显示面板，其中，所述显示面板还包括第一层导线，所述第一层导线设置在基板和绝缘层之间，所述第一层导线整体覆盖有第三高附着金属层和第四高附着金属层，所述第一层导线包括设置在薄膜晶体管的栅极导线段，所述绝缘层上对应栅极设有半导体层，所述半导体层两端上设有分隔的薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和漏极导线段之间设有沟道，所述沟道底部为半导体层。
  9. 如权利要求8所述的一种显示面板，其中，所述第二层导线整体覆盖有第一高附着金属层和第二高附着金属层。
  10. 一种显示面板制程，包括步骤：
    在基板上设置绝缘层，
    在绝缘层上设置第一高附着金属层；
    在第一高附着金属层上设置中间导电层；
    在中间导电层上设置第二高附着金属层；
    蚀刻第一高附着金属层、中间导电层和第二高附着金属层形成第二层导线。
  11. 如权利要求10所述的显示面板制程，其中，所述在基板上设置绝缘层包括步骤：
    在基板上设置第三高附着金属层；
    在第三高附着金属层上设置第二中间导电层；
    在第二中间导电层上设置第四高附着金属层；
    蚀刻第三高附着金属层、第二中间导电层和第四高附着金属层形成第一层导线，
    在第一层导线上设置绝缘层。
  12. 如权利要求11所述的一种显示面板制程，其中，所述中间导电层的厚度大于第一高附着金属层和第二高附着金属层的厚度。
  13. 如权利要求11所述的一种显示面板制程，其中，所述中间导电层底部宽度大于顶部，所述第一高附着金属层宽度与中间导电层底部宽度相同，所述第二高附着金属层宽度与中间导电层顶部宽度相同。
  14. 如权利要求11所述的一种显示面板制程，其中，所述中间导电层采用铜、铝、银、金、铬、钥或上述金属的合金制成，所述第一高附着金属层和第二高附着金属层均采用钼或钼合金。
  15. 如权利要求11所述的一种显示面板制程，其中，所述第二层导线包括设置在薄膜晶体管的源极导线段；所述第二层导线仅在源极导线段设置有第二高附着金属层。
  16. 如权利要求11所述的一种显示面板制程，其中，所述第二层导线包括设置在薄膜晶体管的漏极导线段；所述第二层导线在漏极导线段设置有第二高附着金属层。
  17. 如权利要求11所述的一种显示面板制程，其中，所述显示面板还包括第一层导线，所述第一层导线设置在基板和绝缘层之间，所述第一层导线整体覆盖有第三高附着金属层和第四高附着金属层，所述第一层导线包括设置在薄 膜晶体管的栅极导线段，所述绝缘层上对应栅极设有半导体层，所述半导体层两端上设有分隔的薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和漏极导线段之间设有沟道，所述沟道底部为半导体层。
  18. 如权利要求17所述的一种显示面板制程，其中，所述第二层导线整体覆盖有第一高附着金属层和第二高附着金属层。
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