CN110120394A - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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CN110120394A
CN110120394A CN201910269044.7A CN201910269044A CN110120394A CN 110120394 A CN110120394 A CN 110120394A CN 201910269044 A CN201910269044 A CN 201910269044A CN 110120394 A CN110120394 A CN 110120394A
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layer
copper
display panel
source electrode
drain electrode
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胡小波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

一种显示面板，包括衬底基板、有源层、结构层、饨化层及像素电极层。有源层设于所述衬底基板上。结构层设于有源层上，并包括源极及漏极层，及半导体层。饨化层设于结构层上，及像素电极层设于钝化层上，并连接于结构层。源极及漏极层注入钛离子，并包括由光刻工艺形成的源极电极及漏极电极。

Description

显示面板及其制作方法
【技术领域】
本发明涉及显示技术领域，特别是涉及一种显示面板及其制作方法。
【背景技术】
随着平板显示技术的发展，人们对显示器尺寸、分辨率和画面刷新速率的追求越来越高。现今平板显示器，无伦是液晶显示器或有机发光显示器，都以薄膜晶体管阵列基板为主要组成部件，用于向显示器提供驱动电路，以达到更佳的显示效果。所述薄膜晶体管阵列基板通常设置有数条栅极扫描线和数条数据线，其共同定义多个像素单元。每个像素单元内设置有薄膜晶体管和像素电极，薄膜晶体管的栅极与相应的栅极扫描线相连，当栅极扫描线上的电压达到开启电压时，薄膜晶体管的源极和漏极导通，从而将数据线上的数据电压输入至像素电极，进而控制相应像素区域的显示。
此外，由于铜的导电性远比铝较佳，为了提升显示效能，显示器件更采用铜取代铝作为导电金属材料。但是铜(Cu)膜做为导电层时，和显示器件内的玻璃基板以及介电层的附着力较差。尤其是低温沉积介电层，在经过韧炼高温制程后，容易造成铜膜或是介电层结构出现剥离现象，影响显示效果，甚至造成显示器件失效。
【发明内容】
本发明的目的在于提供一种显示面板及其制作方法，其可有效地增强源极及漏极层和介电层之间的附着力，降低膜层剥离的风险。
为实现上述目的，本发明提供一种显示面板，包括衬底基板；有源层，设于所述衬底基板上；结构层，设于所述有源层上，并包括源极及漏极层，及半导体层；饨化层，设于所述结构层上；及像素电极层，设于所述钝化层上，并连接于所述结构层；其中所述源极及漏极层注入钛离子，并包括由光刻工艺形成的源极电极及漏极电极。
依据本发明的一实施例，所述源极及漏极层包括钼金属层及位于所述钼金属层上的铜金属层，且所述钛离子和所述铜金属层的铜原子共同形成铜钛合金层。
依据本发明的另一实施例，所述铜钛合金层的钛离子的比例为0.1％-5％。
依据本发明的另一实施例，所述铜钛合金层的厚度为10埃-200埃。
依据本发明的另一实施例，所述有源层包括栅极层及覆盖所述栅极层的栅极绝缘层，且所述栅极层具有复合膜结构，其包括钼及铜。
依据本发明的另一实施例，所述半导体层包括氧化铟镓锌。
本发明另外提供一种制作显示面板的方法，包括在衬底基板上形成包括有栅极层及栅极绝缘层的有源层；在所述有源层上沉积包括源极及漏极层，及半导体层的结构层；对所述源极及漏极层注入钛离子；在所述源极及漏极层进行光刻工艺，并形成源极电极及漏极电极；及在所述结构层上依次沉积钝化层及像素电极层。
依据本发明的一实施例，所述源极及漏极层的形成包括：在所述有源层上依次沉积钼金属层及位于所述钼金属层上的铜金属层，且所述钛离子和所述铜金属层的铜原子共同形成铜钛合金层。
依据本发明的另一实施例，所述铜钛合金层的钛离子的比例为0.1％-5％。
依据本发明的另一实施例，所述栅极层通过光刻工艺形成栅极，且所述栅极层具有复合膜结构，其包括钼及铜。
本发明的显示面板及其制作方法，利用钛离子注入所述源极及漏极层的铜金属层，使所述所述铜金属层的表面形成铜钛合金层，再通过光刻工艺形成源极电极及漏极电极，所述铜钛合金层可大幅提升所述源极及漏极层与所述钝化层之间的附着力，避免发生膜层之间剥离，确保显示器件的显示正常。本发明的显示面板及其制作方法有效解决传统铜膜层容易剥离，造成显示器件失效的问题。
【附图说明】
图1A-图1F分别为根据本发明的一较佳实施例的显示面板的局部结构剖面示意图。
图2为根据本发明的所述较佳实施例的显示面板的结构剖面示意图。
图3为制作本发明的一较佳实施例的显示面板的方法流程图。
【具体实施方式】
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
本发明为一种显示面板，其可为液晶显示面板或有机发光显示面板。图1A-1F分别为根据本发明的一较佳实施例的显示面板的局部结构剖面示意图，其中每一个局部结构剖面示意图亦可作为制作本发明显示面板的流程说明。请先参阅图1A，本发明的显示面板1包括衬底基板10，其可为玻璃或石英材质所制。在所述衬底基板10上设置一有源层11，包括栅极层12及覆盖所述栅极层12的栅极绝缘层13，其可分别透过物理气相沉积法(physicalchemical deposition,PVD)沉积形成，但并不以此为限。于此较佳实施例中，所述栅极层12为包括钼(Mo)及铜(Cu)的复合膜层，而所述栅极绝缘层13为氮化硅(SiNx)及二氧化硅(SiO2)的复合膜层。
请参阅图1B及图1C。在所述有源层11上形成一结构层2，其为复合膜层结构，而非单一膜层。如图1B所示，所述结构层2包括源极及漏极层22及半导体层21。具体而言，所述半导体层21为氧化铟镓锌((indium gallium zinc oxide,IGZO)所制，其可通过PVD沉积而成，但并不以此为限，且所述IGZO半导体层21经由光刻工艺而图案化。于此较佳实施例中，如图1C所示，所述源极及漏极层22包括钼金属层23及位于所述钼金属层23上的铜金属层24，其中所述铜金属层24的材料具有较佳导电性，因此设于所述钼金属层23上；钼铜复合膜层具有耐烧蚀性和良好的导电性，用以作为具有良好接触性的接触部件。
请参阅图1D。特别说明的是，所述源极及漏极层22进一步注入钛(Ti)离子，其可采用等离子体增强化学气相沉积法(plasma enhanced chemical vapor deposition,PECVD)进行钛离子的注入，但并不以此为限，于其他实施例中，亦可采用钼(Mo)离子或钨(W)离子的注入。如图1E所示，经过所述钛离子注入后，所述钛离子和所述铜金属层24的铜原子共同形成铜钛合金层241。具体而言，所述铜钛合金层241的钛离子所占的比例为0.1％-5％，其比例不宜超过5％，避免影响后续所述铜金属层24的刻蚀。此外，所述铜钛合金层241的厚度为10埃-200埃。特别说明的是，由于钛具有密度小，机械强度大，具可塑性，因此可大幅提升所述铜金属层24和介电层的附着力。
请参阅图1F。所述源极及漏极层22及所述铜钛合金层241，通过包括曝光、显影及蚀刻的光刻工艺形成图案化的源极电极201及漏极电极202(如图2所示)。所述有源层11及所述结构层2共同构成一薄膜晶体管结构。
请参阅图2。所述结构层2，亦即包括所述源极电极201、所述漏极电极202、所述半导体层21及所述铜钛合金层241上，设有钝化层3，其材料可为二氧化硅、氮化硅，或二者合一，所述钝化层3的作用即为介电层的一种。通过光刻工艺在所述钝化层3上形成接触孔(未标号)，并在所述钝化层3上设置像素电极层4。所述像素电极层4经过光刻工艺形成图案化的像素电极并通过所述接触孔连接于所述结构层2。
图3为制作本发明的一较佳实施例的显示面板的方法流程图。本发明提供一种制作显示面板的方法，包括步骤S10-S50，其中有关各步骤流程的详细说明已详述于先前所述段落的实施例，于此不再复述。请参阅图3。本发明制作显示面板的方法包括：
步骤S10：在衬底基板上形成包括有栅极层及栅极绝缘层的有源层；
步骤S20：在所述有源层上沉积包括源极及漏极层，及半导体层的结构层；
步骤S30：对所述源极及漏极层注入钛离子:
步骤S40：在所述源极及漏极层进行光刻工艺，并形成源极电极及漏极电极；
步骤S50：在所述结构层上依次沉积钝化层及像素电极层。
所述源极及漏极层的形成包括：在所述有源层上依次沉积钼金属层及位于所述钼金属层上的铜金属层，且所述钛离子和所述铜金属层的铜原子共同形成铜钛合金层。具体而言，所述铜钛合金层的钛离子所占的比例为0.1％-5％，其厚度为10埃-200埃，其中所述钛离子的比例不宜过大，较少量的钛离子可以改善铜金属层的附着力，且同时不影响铜模刻蚀特性。
所述栅极层通过光刻工艺形成栅极，且所述栅极层具有复合膜结构，其包括钼及铜。所述栅极绝缘层为氮化硅及二氧化硅的复合膜层。此外，所述源极及漏极层通过包括曝光、显影及蚀刻的光刻工艺形成图案化的源极电极及漏极电极。
本发明的显示面板及其制作方法，利用钛离子注入所述源极及漏极层的铜金属层，使所述所述铜金属层的表面形成铜钛合金层，再通过光刻工艺形成源极电极及漏极电极，所述铜钛合金层可大幅提升所述源极及漏极层与所述钝化层之间的附着力，避免发生膜层之间剥离，确保显示器件的显示正常。本发明的显示面板及其制作方法有效解决传统铜膜层容易剥离，造成显示器件失效的问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种显示面板，其特征在于，包括：
衬底基板；
有源层，设于所述衬底基板上；
结构层，设于所述有源层上，并包括源极及漏极层，及半导体层；
饨化层，设于所述结构层上；及
像素电极层，设于所述钝化层上，并连接于所述结构层；
其中所述源极及漏极层注入钛离子，并包括由光刻工艺形成的源极电极及漏极电极。
2.如权利要求1的显示面板，其特征在于，所述源极及漏极层包括钼金属层及位于所述钼金属层上的铜金属层，且所述钛离子和所述铜金属层的铜原子共同形成铜钛合金层。
3.如权利要求2的显示面板，其特征在于，所述铜钛合金层的钛离子的比例为0.1％-5％。
4.如权利要求2的显示面板，其特征在于，所述铜钛合金层的厚度为10埃-200埃。
5.如权利要求1的显示面板，其特征在于，所述有源层包括栅极层及覆盖所述栅极层的栅极绝缘层，且所述栅极层具有复合膜结构，其包括钼及铜。
6.如权利要求1的显示面板，其特征在于，所述半导体层包括氧化铟镓锌。
7.一种制作显示面板的方法，其特征在于，包括：
在衬底基板上形成包括有栅极层及栅极绝缘层的有源层；
在所述有源层上沉积包括源极及漏极层，及半导体层的结构层；
对所述源极及漏极层注入钛离子；
在所述源极及漏极层进行光刻工艺，并形成源极电极及漏极电极；
及
在所述结构层上依次沉积钝化层及像素电极层。
8.如权利要求7的制作显示面板的方法，其特征在于，所述源极及漏极层的形成包括：在所述有源层上依次沉积钼金属层及位于所述钼金属层上的铜金属层，且所述钛离子和所述铜金属层的铜原子共同形成铜钛合金层。
9.如权利要求8的制作显示面板的方法，其特征在于，所述铜钛合金层的钛离子的比例为0.1％-5％。
10.如权利要求7的制作显示面板的方法，其特征在于，所述栅极层通过光刻工艺形成栅极，且所述栅极层具有复合膜结构，其包括钼及铜。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219389A (zh) * 2013-03-21 2013-07-24 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
CN106653772A (zh) * 2016-12-30 2017-05-10 惠科股份有限公司 一种显示面板及制程
CN108987418A (zh) * 2018-09-11 2018-12-11 惠科股份有限公司 阵列基板及其制备方法和显示器件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219389A (zh) * 2013-03-21 2013-07-24 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
CN106653772A (zh) * 2016-12-30 2017-05-10 惠科股份有限公司 一种显示面板及制程
CN108987418A (zh) * 2018-09-11 2018-12-11 惠科股份有限公司 阵列基板及其制备方法和显示器件

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