CN108987418A - 阵列基板及其制备方法和显示器件 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000872 buffer Substances 0.000 claims abstract description 59
- 238000002161 passivation Methods 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims description 30
- 239000011810 insulating material Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- 239000002305 electric material Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 151
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 239000010949 copper Substances 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- DYDNPESBYVVLBO-UHFFFAOYSA-N formanilide Chemical compound O=CNC1=CC=CC=C1 DYDNPESBYVVLBO-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- -1 organic siliconresin Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- ODGAOXROABLFNM-UHFFFAOYSA-N polynoxylin Chemical compound O=C.NC(N)=O ODGAOXROABLFNM-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
本发明属于显示技术领域,具体涉及一种阵列基板及其制备方法和显示器件。该阵列基板包括:基板;栅极,形成于所述基板上;栅极绝缘层,形成于所述基板上并覆盖所述栅极;有源层,形成于所述栅极绝缘层上;源漏极,形成于所述有源层上;钝化层,所述钝化层覆盖所述源漏极;其中,所述源漏极与所述钝化层之间设置有用于提高所述源漏极与所述钝化层之间的粘附性的缓冲层,且所述缓冲层包覆在所述源漏极表面。本发明增设有缓冲层的阵列基板具有很好的平整度和均一性,能改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象。
Description
技术领域
本发明属于显示技术领域,具体涉及一种阵列基板及其制备方法和显示器件。
背景技术
随着显示科技的日渐进步,平板显示成为人们不可缺少的必备品之一。目前主流显示包括主动式液晶显示器(Active Matrix Liquid Crystal Display,AMLCD)和主动式有机发光二极管显示器(Active Matrix Organic Light Emitting Diode,AMOLED),两种显示方式以各自优势相互并存。
主动式液晶显示器包括主动阵列基板,彩色滤光片基板以及与位于两基板之间的液晶层所构成。主动式有机发光二极管显示器包括主动阵列基板和有机发光二极管层。两种显示方式均需要有稳定可靠的阵列基板。阵列基板包含一个或多个薄膜晶体管(Thin-film Transistor,TFT),随着人们对显示面板的分辨率以及显示品质的需求不断提升,所构成薄膜晶体管的导电层、绝缘层材料和制程方式相较于传统开始发生转变。如,从传统的Al/Mo开始转向Cu/Mo,Cu/Mo-Ti,ITO等,或氮化硅到氧化硅以及其它有机或无机绝缘材料。然而,随着材料的变化,导电层源漏极(Source/Drain)与钝化层(Passivation,PV)往往会产生粘附很差的情况,如此不仅降低成品良率,还会影响显示品质。如当Source/Drain为Cu导线,PV为氧化硅时,Source/Drain与氧化硅粘附力比较差,会出现气隆起,极大地降低了面板良率。
发明内容
本发明的目的在于克服现有技术的上述不足,提供一种阵列基板及其制备方法和显示器件,旨在解决现有薄膜晶体管组成的阵列基板中,源漏极与钝化层之间粘附性差的技术问题。
为实现上述发明目的,本发明采用的技术方案如下:
本发明一方面提供一种阵列基板,包括:
基板;
栅极,形成于所述基板上;
栅极绝缘层,形成于所述基板上并覆盖所述栅极;
有源层,形成于所述栅极绝缘层上;
源漏极,形成于所述有源层上;
钝化层,所述钝化层覆盖所述源漏极;
其中,所述源漏极与所述钝化层之间设置有用于提高所述源漏极与所述钝化层之间的粘附性的缓冲层,且所述缓冲层包覆在所述源漏极表面。
本发明提供的阵列基板中,在源漏极与钝化层之间增设一层缓冲层,该缓冲层包覆在源漏极表面,且对源漏极和钝化层同时具有很好的粘附性,这样可以提高源漏极与钝化层之间的粘附性,与现有技术相比,本发明增设有缓冲层的阵列基板具有很好的平整度和均一性,能改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象。
本发明另一方面提供一种阵列基板的制备方法,包括如下步骤:
提供基板;
在所述基板上制备栅极;
在所述栅极上制备栅极绝缘层;
在所述栅极绝缘层上制备有源层;
在所述有源层上制备源漏极;
在所述源漏极上制备缓冲层,在所述缓冲层上制备钝化层;
其中,所述缓冲层包覆在所述源漏极表面,且所述缓冲层用于提高所述源漏极与所述钝化层之间的粘附性。
本发明提供的阵列基板的制备方法,直接在源漏极与钝化层之间增设一层用于提高源漏极与钝化层之间的粘附性的缓冲层,该缓冲层包覆在源漏极表面将源漏极完全包裹,该制备过程不需要增加额外的光罩费用支出,因此,工艺简单,且成本低,而且最终制得的阵列基板,具有很好的平整度和均一性,能够显著改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象。
最后,本发明提供一种显示器件,所述显示器件包括本发明的上述阵列基板。
本发明提供的显示器件中设置有本发明特有的阵列基板,而该阵列基板具有很好的平整度和均一性,能改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象,因此具有该阵列基板的显示器件具有很好的显示效果。
附图说明
图1为现有阵列基板的源漏极和钝化层之间粘附性差引起的异常效果图:
图2为本发明实施例提供的阵列基板的源漏极和钝化层之间增加有缓冲层的结构图;
其中,图中各附图标记为:
1-基板;2-栅极;3-栅极绝缘层;4-有源层;5-源漏极;6-钝化层;7-缓冲层。
具体实施方式
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白,以下结合实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
需要说明的是,当元件被称为“固定于”或“设置于”另一个元件,它可以直接在另一个元件上或者间接在该另一个元件上。当一个元件被称为是“连接于”另一个元件,它可以是直接连接到另一个元件或间接连接至该另一个元件上。
需要理解的是,术语“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
一方面,本发明实施例提供了一种阵列基板,其结构如图2所示,包括:
基板1;
栅极2,形成于所述基板1上;
栅极绝缘层3,形成于所述基板1上并覆盖所述栅极2;
有源层4,形成于所述栅极绝缘层3上;
源漏极5,形成于所述有源层4上;
钝化层6,所述钝化层覆盖所述源漏极5;
其中,所述源漏极5与所述钝化层6之间设置有用于提高所述源漏极5与所述钝化层6之间的粘附性的缓冲层7,且所述缓冲层7包覆在所述源漏极5表面。
图1为现有阵列基板的结构示意图,其中,源漏极5(如Cu)与钝化层6(如氧化硅)之间粘附性差,出现气隆起:而本发明实施例提供的阵列基板中(如图2所示),在源漏极5与钝化层6之间增设一层缓冲层7,该缓冲层7包覆在源漏极5表面,且对源漏极5和钝化层6同时具有很好的粘附性,这样可以提高源漏极5与钝化层6之间的粘附性;因此,本发明实施例提供的增设有缓冲层7的阵列基板,具有很好的平整度和均一性,能改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象。
进一步地,本发明实施例提供的阵列基板中,所述缓冲层7由导电材料、半导体材料或绝缘材料中的任意一种组成,即该缓冲层7可以为导电材料组成的导电层,或可以为半导体材料组成的半导体层,也可以为绝缘材料组成的绝缘层。
优选地,所述缓冲层由导电材料组成,且所述导电材料为氧化铟锡(ITO)、含钼(Mo)合金或含钛(Ti)的合金。或者,所述缓冲层由半导体材料组成,且所述半导体材料为金属氧化物半导体材料,比如氧化锌,氧化锡,氧化铟,氧化钼等或者它们的混合物。或者,所述缓冲层由绝缘材料组成,且所述绝缘材料为有机绝缘材料或无机绝缘材料;其中,所述无机绝缘材料包括氮化硅、氮氧化硅和三氧化二铝中的至少一种(因要解决氧化硅材料组成的钝化层与铜材料组成的源漏极之间的粘附性不好的问题,此处缓冲层材料不包括氧化硅);所述有机绝缘材料为树脂,树脂包括各种天然树脂和人工树脂,如酚醛树脂、脲醛树脂、苯胺甲醛树脂、三聚氰胺甲醛树脂、甘油树脂、有机硅树脂、聚酯薄膜、不饱和聚酯树脂、环氧树脂等。
氧化硅材料组成的钝化层与铜材料组成的源漏极之间的粘附性不佳的原因为:氧化硅(SiOx)表面缺陷较少,悬空的Si-相对较小,因此较少的悬空Si-键与面心立方结构的Cu表面结合较小,容易出现粘附性不佳的状况。导体材料和半导体材料其连接方式为离子键,能与Cu表面接触良好;而有机材料如树脂由于特殊的热膨胀系数以及可能存在的范德华力,也能与Cu表面接触良好。因此,上述材料组成的缓冲层能增加钝化层与源漏极之间的粘附性。
在一具体的实施例中,该源漏极5为铜材料,源漏极5在有源层4的上方设有沟道,将源漏极5分为源极和漏极,分布在有源层4两侧。该钝化层6为氧化硅,而该缓冲层7则优选为ITO层,在铜表面增加氧化物导体ITO层,可以解决铜与氧化硅粘附性较差的问题;同时,源漏极5的金属导线(如Cu)的湿刻蚀线宽Loss较氧化物导电材料ITO大,因此,源漏极5的金属导线与ITO层(缓冲层7)可以采用同一道光罩的同时,ITO还可以覆盖在源漏极5的金属表面,形成为源漏极5的保护层。
进一步地,本发明实施例提供的阵列基板中,所述缓冲层7的厚度为10-200nm。在该厚度范围内,既可以增加源漏极5与钝化层6之间的粘附性,又不影响显示面板的显示性能,综合效果最佳。
另一方面,本发明实施例还提供了一种阵列基板的制备方法,包括如下步骤:
S01:提供基板1;
S02:在所述基板1上制备栅极2;
S03:在所述栅极2上制备栅极绝缘层3;
S04:在所述栅极绝缘层3上制备有源层4;
S05:在所述有源层4上制备源漏极5;
S06:在所述源漏极5上制备缓冲层7,在所述缓冲层7上制备钝化层6;
其中,所述缓冲层7包覆在所述源漏极5表面,且所述缓冲层7用于提高所述源漏极5与所述钝化层6之间的粘附性。
本发明实施例提供的阵列基板的制备方法,直接在源漏极5与钝化层6之间增设一层用于提高源漏极5与钝化层6之间的粘附性的缓冲层7,该缓冲层7包覆在源漏极5表面将源漏极完全包裹,该制备过程不需要增加额外的光罩费用支出,因此,工艺简单,且成本低,而且最终制得的阵列基板,具有很好的平整度和均一性,能够显著改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象。
进一步地,上述基板1为玻璃(Glass)基板,制备的栅极绝缘层3(GI)可以为氮化硅或氧化硅。制备的有源层4(Active Layer)为刻蚀阻挡型结构(ESL),具体可以为a-Si层。制备的缓冲层7则由导电材料、半导体材料或绝缘材料组成,而缓冲层的厚度为10-200nm。该制备方法中的缓冲层7在上文的阵列基板中已经详细阐述,在此不再重复说明。
最后,本发明实施例提供一种显示器件,所述显示器件包括本发明实施例的上述阵列基板。
本发明实施例提供的显示器件中设置有本发明特有的阵列基板,而该阵列基板具有很好的平整度和均一性,能改善显示面板的显示过程中存在气泡,以及出现亮点或暗点的显示不均等现象,因此具有该阵列基板的显示器件具有很好的显示效果。
进一步地,所述显示器件为液晶显示器件,优选为主动式液晶显示器件;或为有机发光二极管显示器件,优选为主动式有机发光二极管显示器件。即由本发明实施例的阵列基板,以及彩色滤光片基板和位于两基板之间的液晶层构成的主动式液晶显示器件,以及,由本发明实施例的阵列基板和有机发光二极管层组成的主动式有机发光二极管显示器件。
本发明先后进行过多次试验,现举一部分试验结果作为参考对发明进行进一步详细描述,下面结合具体实施例进行详细说明。
实施例1
图2为本实施例的多个薄膜晶体管组成的阵列基板的结构示意图,该阵列基板包括:玻璃材料的基板1;栅极2,形成于所述基板1上;栅极绝缘层3,形成于所述基板1上并覆盖所述栅极2;有源层4,形成于所述栅极绝缘层3上;铜材料组成的源漏极5,形成于所述有源层4上;氧化硅材料组成的钝化层6,所述钝化层覆盖所述源漏极5;其中,所述源漏极5与所述钝化层6之间设置有用于提高所述源漏极5与所述钝化层6之间的粘附性的、ITO材料组成的缓冲层7,且所述缓冲层7包覆在所述源漏极5表面。
该阵列基板的制程过程如下:
S11:提供玻璃材料的基板1(Glass);
S12:在所述基板1上制备栅极2(Gate);
S13:在所述栅极2上制备栅极绝缘层3(GI);
S14:在所述栅极绝缘层3上制备有源层4(Active Layer);
S15:在所述有源层4上制备源漏极5(Source/Drain,铜材料);
S16:在所述源漏极5上制备缓冲层7(ITO层),在所述缓冲层7上制备钝化层6(PV,氧化硅材料);
其中,该缓冲层7包覆在源漏极5表面,且缓冲层7用于提高源漏极5与钝化层6之间的粘附性,解决Cu与氧化硅粘附性较差的问题。
实施例2
图2为本实施例的多个薄膜晶体管组成的阵列基板的结构示意图,该阵列基板包括:玻璃材料的基板1;栅极2,形成于所述基板1上;栅极绝缘层3,形成于所述基板1上并覆盖所述栅极2;有源层4,形成于所述栅极绝缘层3上;铜材料组成的源漏极5,形成于所述有源层4上;氧化硅材料组成的钝化层6,所述钝化层覆盖所述源漏极5;其中,所述源漏极5与所述钝化层6之间设置有用于提高所述源漏极5与所述钝化层6之间的粘附性的、有机绝缘材料或无机绝缘材料组成的缓冲层7,且所述缓冲层7包覆在所述源漏极5表面。
其制程过程如下:
S21:提供玻璃材料的基板1(Glass);
S22:在所述基板1上制备栅极2(Gate);
S23:在所述栅极2上制备栅极绝缘层3(GI);
S24:在所述栅极绝缘层3上制备有源层4(Active Layer);
S25:在所述有源层4上制备源漏极5(Source/Drain,铜材料);
S26:在所述源漏极5上制备缓冲层7(有机绝缘层或无机绝缘层),在所述缓冲层7上制备钝化层6(PV,氧化硅材料);
其中,该缓冲层7包覆在源漏极5表面,且缓冲层7用于提高源漏极5与钝化层6之间的粘附性,解决Cu与氧化硅粘附性较差的问题。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种阵列基板,其特征在于,包括:
基板;
栅极,形成于所述基板上;
栅极绝缘层,形成于所述基板上并覆盖所述栅极;
有源层,形成于所述栅极绝缘层上;
源漏极,形成于所述有源层上;
钝化层,所述钝化层覆盖所述源漏极;
其中,所述源漏极与所述钝化层之间设置有用于提高所述源漏极与所述钝化层之间的粘附性的缓冲层,且所述缓冲层包覆在所述源漏极表面。
2.如权利要求1所述的阵列基板,其特征在于,所述缓冲层由导电材料组成,且所述导电材料为氧化铟锡、含钼合金或含钛合金含。
3.如权利要求1所述的阵列基板,其特征在于,所述缓冲层由半导体材料组成,且所述半导体材料为金属氧化物半导体材料。
4.如权利要求1所述的阵列基板,其特征在于,所述缓冲层由绝缘材料组成,且所述绝缘材料为有机绝缘材料或无机绝缘材料。
5.如权利要求4所述的阵列基板,其特征在于,所述有机绝缘材料为树脂;和/或
所述无机绝缘材料包括氮化硅、氮氧化硅和三氧化二铝中的至少一种。
6.如权利要求1-5任一项所述阵列基板,其特征在于,所述缓冲层的厚度为10-200nm。
7.一种阵列基板的制备方法,其特征在于,包括如下步骤:
提供基板;
在所述基板上制备栅极;
在所述栅极上制备栅极绝缘层;
在所述栅极绝缘层上制备有源层;
在所述有源层上制备源漏极;
在所述源漏极上制备缓冲层,在所述缓冲层上制备钝化层;
其中,所述缓冲层包覆在所述源漏极表面,且所述缓冲层用于提高所述源漏极与所述钝化层之间的粘附性。
8.如权利要求7所述的制备方法吗,其特征在于,所述缓冲层由导电材料、半导体材料或绝缘材料组成;和/或
所述缓冲层的厚度为10-200nm。
9.一种显示器件,其特征在于,所述显示器件包括如权利要求1-5任一项所述的阵列基板。
10.如权利要求9所述的显示器件,其特征在于,所述显示器件为液晶显示器件或有机发光二极管显示器件。
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