WO2017221768A1 - 増幅装置 - Google Patents
増幅装置 Download PDFInfo
- Publication number
- WO2017221768A1 WO2017221768A1 PCT/JP2017/021822 JP2017021822W WO2017221768A1 WO 2017221768 A1 WO2017221768 A1 WO 2017221768A1 JP 2017021822 W JP2017021822 W JP 2017021822W WO 2017221768 A1 WO2017221768 A1 WO 2017221768A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage
- amplifier
- signal
- power
- power supply
- Prior art date
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
Definitions
- the present invention relates to a technique for amplifying an RF signal.
- high frequency amplification means including a power output stage, power supply means for providing a variable value of a DC voltage for supplying power to the power output stage, and a signal of input power of the high frequency amplification means are received as control inputs.
- a semiconductor power amplifier for supplying power to an antenna element includes a control unit that supplies a power supply unit with a control signal that determines a DC voltage value in response to a control input (see Patent Document 1). ).
- the operating voltage of the magnetron oscillator is about 5 kV, while the amplifying device using the SSPA has a low operating voltage of about 30 V. If the power supply is the same, the amplifying device and the power supply device are connected at a low voltage and a large current. It becomes difficult to separate the amplifying device from the power supply device due to restrictions that impede practical use such as the cable to be connected must be made extremely thick or the length of the cable is limited. There is a problem that there is.
- Embodiments of the present invention have been made to solve the above-described problems, and an object thereof is to provide an amplifying apparatus that can be more easily separated from a power supply apparatus.
- the amplifying apparatus includes at least one voltage conversion unit that converts a voltage of power supplied from an external device into a lower voltage, and the at least one voltage. And at least one amplifier that operates with the supplied power whose voltage is converted by the converter and amplifies the high-frequency signal.
- the power supply unit can be separated more easily.
- FIG. 1 is a schematic perspective view showing an amplification device and a power supply device according to this embodiment.
- FIG. 2 is a schematic diagram showing the configuration of the amplification device.
- the amplification device 1 is connected to a power supply device 2 by a power cable 3, and the power supply device 2 supplies power to the amplification device 1 with a relatively high voltage of about 300 V via the power cable 3. I do.
- the voltage of the power supplied to the amplifying device 1 is converted to about 30 V in the amplifying device 1.
- the amplifying apparatus 1 includes a gain module 11 that distributes and outputs an input RF signal, a plurality of amplifiers 12 that respectively amplify the distributed and input RF signals, and a plurality of amplifiers
- a synthesizer 13 synthesizes and outputs a plurality of RF signals amplified by the amplifiers 12, and a hollow waveguide 14 to which the RF signal output from the synthesizer 13 is input.
- FIG. 3 is a diagram illustrating the configuration of the gain module.
- FIG. 4 is a diagram illustrating the configuration of the amplifier.
- the gain module 11 includes an input power monitoring unit 110, an RF switch 111, a variable attenuator 112, a fixed attenuator 113, an amplifier 114, a distributor 115, an adjustment unit 116, and a voltage conversion unit 119.
- the input power monitoring unit 110 determines whether or not the power of the RF signal input from the outside is appropriate, and outputs the RF signal to the RF switch 111 if it is appropriate.
- the RF switch 111 is set to ON or OFF based on control from an external device, and outputs an RF signal to the variable attenuator 112 only when set to ON.
- the variable attenuator 112 is an attenuator whose amount of attenuation can be variably adjusted.
- the variable attenuator 112 attenuates an input RF signal based on a control signal input from the outside and outputs the attenuated RF signal to the fixed attenuator 113.
- the fixed attenuator 113 is an attenuator whose amount of attenuation is fixed, attenuates the input RF signal, and outputs it to the amplifier 114.
- the amplifier 114 amplifies the input RF signal and outputs it to the distributor 115.
- the distributor 115 distributes the input RF signal and outputs it to each of the plurality of adjusting units 116.
- Each adjustment unit 116 includes an amplitude phase adjustment unit 117 and a pre-driver amplifier 118, adjusts the amplitude and phase of the RF signal output from the distributor 115, and outputs the result to the corresponding amplifier 12.
- the amplitude / phase adjustment unit 117 includes, for example, a variable attenuator and a phase shifter, adjusts the amplitude and phase of the input RF signal, and outputs the adjusted signal to the pre-driver amplifier 118.
- the pre-driver amplifier 118 amplifies the input RF signal and outputs the amplified RF signal to the corresponding amplifier 12.
- the amplitude adjustment amount and the phase adjustment amount by each adjustment unit 116 can be individually adjusted. These adjustment amounts are, for example, the RF signal output from each adjustment unit 116 before the amplification device 1 is shipped. The amplitude and phase are adjusted to be equal to each other.
- the voltage conversion unit 119 is a DC / DC converter that converts the voltage of the power supplied from the power supply device 2 via the power cable 3 from 300 V to 30 V.
- the DC voltage of 30 V is supplied from each adjustment unit 116 to each amplifier 12. Is superimposed on each of the outputs.
- the amplifier 12 includes a driver amplifier 120, a final amplifier 121, and a voltage converter 122, which are semiconductor elements.
- the driver amplifier 120 amplifies the RF signal input to the amplifier 12 and outputs the amplified RF signal to the final amplifier 121.
- the final amplifier 121 amplifies the RF signal output from the drive amplifier 120 and outputs the amplified RF signal to the combiner 13.
- the voltage conversion unit 122 is a DC / DC converter that converts the voltage of power supplied from the power supply device 2 via the power cable 3 from 300V to 30V, and converts the power of 30V into a driver amplifier. 120 and the final amplifier 121.
- the RF signal output from the amplifier 12 is combined by the combiner 13 and output to the hollow waveguide 14.
- the power supplied from the power supply device 2 with a relatively high voltage of about 300V and a relatively small current is converted into a low voltage of about 30V within the amplifier device 1, thereby making the cable 3 thick and short.
- the amplification device 1 and the power supply device 2 can be separated. As a result, changes to the conventional configuration in which the magnetron oscillator is used can be reduced, and it is easier to replace the magnetron with an SSPA.
Abstract
Description
Claims (4)
- 外部機器から供給される供給電力の電圧をより低い電圧に変換する少なくとも1つ以上の電圧変換部と、
前記少なくとも1つ以上の電圧変換部により電圧が変換された供給電力により動作し、高周波信号を増幅する少なくとも1つ以上の増幅器と
を備える増幅装置。 - 前記少なくとも1つ以上の電圧変換部は、前記少なくとも1つ以上の増幅器のそれぞれに対応して内蔵されることを特徴とする請求項1に記載の増幅装置。
- 前記少なくとも1つ以上の増幅器及び前記少なくとも1つ以上の電圧変換部は複数であり、
入力された高周波信号を分配して前記複数の増幅器へ出力する分配器を更に備え、
前記複数の電圧変換部のうち1つは、前記分配器から前記複数の増幅器への出力に電圧を重畳することを特徴とする請求項1または請求項2に記載の増幅装置。 - 前記複数の増幅器のそれぞれにより出力された高周波信号を合成して出力する合成器を更に備えることを特徴とする請求項3に記載の増幅装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018523931A JPWO2017221768A1 (ja) | 2016-06-24 | 2017-06-13 | 増幅装置 |
US16/098,745 US10840859B2 (en) | 2016-06-24 | 2017-06-13 | Amplification apparatus |
KR1020187033053A KR20190020651A (ko) | 2016-06-24 | 2017-06-13 | 증폭 장치 |
CN201780038551.9A CN109314495A (zh) | 2016-06-24 | 2017-06-13 | 放大装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016125238 | 2016-06-24 | ||
JP2016-125238 | 2016-06-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017221768A1 true WO2017221768A1 (ja) | 2017-12-28 |
Family
ID=60783954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/021822 WO2017221768A1 (ja) | 2016-06-24 | 2017-06-13 | 増幅装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10840859B2 (ja) |
JP (1) | JPWO2017221768A1 (ja) |
KR (1) | KR20190020651A (ja) |
CN (1) | CN109314495A (ja) |
TW (1) | TWI727034B (ja) |
WO (1) | WO2017221768A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102377839B1 (ko) * | 2019-10-25 | 2022-03-23 | 큐알티 주식회사 | 지능형 다채널 광대역 고주파인가장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57200937U (ja) * | 1981-06-17 | 1982-12-21 |
Family Cites Families (26)
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JPS63131624A (ja) * | 1986-11-20 | 1988-06-03 | Nec Corp | 送信装置 |
JPH0492833U (ja) * | 1990-12-29 | 1992-08-12 | ||
JPH06164269A (ja) * | 1992-11-26 | 1994-06-10 | Mitsubishi Electric Corp | 電力増幅器 |
JPH07212255A (ja) | 1994-01-21 | 1995-08-11 | Kokusai Electric Co Ltd | 送信出力制御回路および送信出力制御方法 |
US5491454A (en) * | 1994-10-31 | 1996-02-13 | Motorola, Inc. | Method and apparatus for reducing distortion in an output signal of an amplifier |
JP3448213B2 (ja) * | 1998-05-27 | 2003-09-22 | 三菱電機株式会社 | マイクロ波モジュール |
US6603391B1 (en) * | 1999-03-09 | 2003-08-05 | Micron Technology, Inc. | Phase shifters, interrogators, methods of shifting a phase angle of a signal, and methods of operating an interrogator |
US6300835B1 (en) * | 1999-12-10 | 2001-10-09 | Motorola, Inc. | Power amplifier core |
JP3323174B2 (ja) | 1999-12-16 | 2002-09-09 | エヌイーシーネットワーク・センサ株式会社 | Tdma方式デジタル無線送信装置 |
JP2001185967A (ja) | 1999-12-27 | 2001-07-06 | Matsushita Electric Ind Co Ltd | 高周波電力増幅器 |
EP1267487A1 (de) * | 2001-06-15 | 2002-12-18 | Contraves Space AG | Hochfrequenzverstärker |
US6985039B2 (en) * | 2003-04-25 | 2006-01-10 | Paragon Communications Ltd. | Method and apparatus for providing a stable power output of power amplifiers, operating under unstable supply voltage conditions |
JP4440121B2 (ja) * | 2005-01-06 | 2010-03-24 | Necエレクトロニクス株式会社 | 電圧供給回路およびマイクユニット |
EP2022168B1 (en) | 2006-05-05 | 2018-09-05 | Astrium Limited | Rf power amplifiers |
CN100582801C (zh) * | 2007-11-29 | 2010-01-20 | 中兴通讯股份有限公司 | 一种功率放大器的批量检测方法和装置 |
WO2009147891A1 (ja) * | 2008-06-02 | 2009-12-10 | 株式会社 東芝 | カーテシアンループを用いた無線送信装置 |
JP2010154460A (ja) * | 2008-12-26 | 2010-07-08 | Hitachi Kokusai Electric Inc | 高周波電力増幅装置 |
US8542061B2 (en) * | 2010-04-20 | 2013-09-24 | Rf Micro Devices, Inc. | Charge pump based power amplifier envelope power supply and bias power supply |
EP2432118B1 (en) * | 2010-09-15 | 2012-12-26 | Agence Spatiale Européenne | Radio-frequency power amplifier with fast envelope tracking |
JP2012199746A (ja) | 2011-03-22 | 2012-10-18 | Nec Corp | ドハティ増幅器及びドハティ増幅器のバイアス設定方法 |
JPWO2014050721A1 (ja) * | 2012-09-26 | 2016-08-22 | シャープ株式会社 | 増幅装置および増幅装置を搭載した無線通信装置 |
US8884696B2 (en) * | 2012-10-15 | 2014-11-11 | Intel Mobile Communications GmbH | Control circuit and method for controlling an operation of a power amplifier |
JP5933471B2 (ja) * | 2013-03-14 | 2016-06-08 | パナソニック株式会社 | フェーズドアレイ送信装置 |
EP2980990B1 (en) | 2013-03-26 | 2019-01-02 | Nec Corporation | Power amplifier |
DE102014104364A1 (de) * | 2014-03-28 | 2015-10-01 | Intel IP Corporation | Eine Vorrichtung und ein Verfahren zum Bereitstellen eines Versorgungssteuerungssignals für eine Versorgungseinheit |
JP2016119609A (ja) * | 2014-12-22 | 2016-06-30 | 富士通株式会社 | 増幅装置 |
-
2017
- 2017-04-19 TW TW106113050A patent/TWI727034B/zh active
- 2017-06-13 WO PCT/JP2017/021822 patent/WO2017221768A1/ja active Application Filing
- 2017-06-13 CN CN201780038551.9A patent/CN109314495A/zh active Pending
- 2017-06-13 KR KR1020187033053A patent/KR20190020651A/ko not_active Application Discontinuation
- 2017-06-13 JP JP2018523931A patent/JPWO2017221768A1/ja active Pending
- 2017-06-13 US US16/098,745 patent/US10840859B2/en active Active
Patent Citations (1)
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JPS57200937U (ja) * | 1981-06-17 | 1982-12-21 |
Also Published As
Publication number | Publication date |
---|---|
US20190140604A1 (en) | 2019-05-09 |
CN109314495A (zh) | 2019-02-05 |
US10840859B2 (en) | 2020-11-17 |
TW201801471A (zh) | 2018-01-01 |
JPWO2017221768A1 (ja) | 2019-04-18 |
TWI727034B (zh) | 2021-05-11 |
KR20190020651A (ko) | 2019-03-04 |
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