WO2017179944A1 - 발광소자, 발광소자 패키지 및 발광모듈 - Google Patents

발광소자, 발광소자 패키지 및 발광모듈 Download PDF

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Publication number
WO2017179944A1
WO2017179944A1 PCT/KR2017/004065 KR2017004065W WO2017179944A1 WO 2017179944 A1 WO2017179944 A1 WO 2017179944A1 KR 2017004065 W KR2017004065 W KR 2017004065W WO 2017179944 A1 WO2017179944 A1 WO 2017179944A1
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
composition
layers
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/004065
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English (en)
French (fr)
Korean (ko)
Inventor
김명희
홍정엽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160046356A external-priority patent/KR102486036B1/ko
Priority claimed from KR1020160049327A external-priority patent/KR20170120878A/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to JP2018554374A priority Critical patent/JP7003058B2/ja
Priority to CN201780023885.9A priority patent/CN109075160B/zh
Priority to EP17782699.7A priority patent/EP3444841B1/en
Priority to US16/093,795 priority patent/US10644194B2/en
Priority to CN202211613353.XA priority patent/CN115881868A/zh
Publication of WO2017179944A1 publication Critical patent/WO2017179944A1/ko
Anticipated expiration legal-status Critical
Priority to JP2021215211A priority patent/JP7270300B2/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling

Definitions

  • the embodiment relates to a medical device having an ultraviolet light emitting element.
  • the first semiconductor layer, the first layer, and the third layer have a composition formula of Al x Ga 1 - x N (0.5 ⁇ x ⁇ 0.6), and the fourth layer is Al b Ga 1 - b. It may have a composition formula of N (0.45 ⁇ b ⁇ 0.55).
  • the thickness of the quantum well layer has a thickness of 25% or less of the thickness of the quantum wall layer, the active layer generates light of 295nm to 315nm.
  • the embodiment can provide a light emitting module and a medical device capable of improving the reliability of medical or therapeutic ultraviolet wavelengths having a full width at half maximum (FWHM) of 17 nm or less.
  • FWHM full width at half maximum
  • FIG. 6 is a graph showing the power of light according to the thickness of the quantum wall layer of the active layer according to the embodiment.
  • FIG. 7 is a graph illustrating the reliability of the first conductive semiconductor layer according to the thickness of the second conductive semiconductor layer of the embodiment.
  • the first conductive semiconductor layer 112b may be formed on the second superlattice layer 120b.
  • the first conductive semiconductor layer 112b may be formed of a compound semiconductor such as group III-V or group II-VI.
  • the first conductive semiconductor layer 112b may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. .
  • the third well layer 136 may include a lower Al composition than the Al composition of the last quantum wall layer 114a of the active layer 114.
  • the third well layer 136 is Al g Ga 1 - may include a semiconductor material having a compositional formula of g N (0.24 ⁇ g ⁇ 0.48).
  • the thickness W6 of the third well layer 136 may be thinner than the thickness W5 of the second intermediate barrier layer 135 and the thickness W7 of the second barrier layer 137.
  • the thickness W6 of the third well layer 136 of the embodiment may be 5 nm or less, for example, 1 nm to 5 nm.
  • the second and third well layers 134 and 136 may have the same Al composition and thickness, but are not limited thereto.
  • the Al composition of the second and third well layers 134 and 136 may be higher than the Al composition of the first well layer 132.
  • the second conductivity type semiconductor layers 116a and 116b may be disposed on the EBL 130.
  • the second conductivity type semiconductor layers 116a and 116b may be formed in a single layer or multiple layers, and may include a first conductive semiconductor layer 116a and a second conductive semiconductor layer 116b in the case of a multilayer.
  • the first conductive semiconductor layer 116a may be disposed on the EBL 130 and may be disposed between the EBL 130 and the second conductive semiconductor layer 116b.
  • the first and second conductive semiconductor layers 116a and 116b may be semiconductors having a second conductive dopant.
  • the active layer 114 may be disposed on the first conductive semiconductor layer 112b, and the EBL 130 may be disposed on the active layer 114.
  • the active layer 114 and the EBL 130 may be organic metal chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), molecular beam growth (MBE), hydride vapor deposition (HVPE), or the like. It may be formed as, but is not limited thereto.
  • the second conductive semiconductor layer 116b may be formed by a 2D growth method.
  • 8 is a view showing the surface of the second conductive semiconductor layer of the embodiment.
  • the second conductive semiconductor layer 116b according to the embodiment may implement a flat surface by 2D growth to improve contact reliability with the second electrode (153 of FIG. 2).
  • IZTO Gallium Zinc Oxide
  • IZTO Indium Zinc Tin Oxide
  • IAZO Indium Aluminum Zinc Oxide
  • IGZO Indium Gallium Zinc Oxide
  • IGTO Indium Gallium Tin Oxide
  • ATO Antimony Tin Oxide
  • GZO Gallium Zinc Oxide
  • IZON IZO Nitride
  • ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, Mo material and may include at least one of It can be formed in multiple layers.
  • the first heat dissipation unit 30 may be disposed on the rear surface of the light emitting unit 20.
  • the first heat dissipation unit 30 may be in direct contact with the light emitting unit 20 and may emit heat generated from the light emitting unit 20.
  • the first heat dissipation unit 30 may be, for example, a heat sink, but is not limited thereto.
  • the first heat dissipation unit 30 may include a plurality of heat dissipation fins.
  • the plurality of heat dissipation fins can improve the heat dissipation efficiency by widening the heat dissipation area.
  • the light compensator 60 including the first to third compensators 61, 63, and 65 is disposed on the light emitting module to target the light emitted from the light emitter 20 to the target area TA. Uniformity can be improved by diffusing.
  • the uniformity is less than 70%, reliability of the phototherapy may be deteriorated due to the difference in illuminance between the center portion and the edge region of the circular target area TA.

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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
PCT/KR2017/004065 2016-04-15 2017-04-14 발광소자, 발광소자 패키지 및 발광모듈 Ceased WO2017179944A1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018554374A JP7003058B2 (ja) 2016-04-15 2017-04-14 発光素子、発光素子パッケージおよび発光モジュール
CN201780023885.9A CN109075160B (zh) 2016-04-15 2017-04-14 发光器件、发光器件封装和发光模块
EP17782699.7A EP3444841B1 (en) 2016-04-15 2017-04-14 Light-emitting device
US16/093,795 US10644194B2 (en) 2016-04-15 2017-04-14 Light-emitting device, light-emitting device package, and light-emitting module
CN202211613353.XA CN115881868A (zh) 2016-04-15 2017-04-14 发光器件
JP2021215211A JP7270300B2 (ja) 2016-04-15 2021-12-28 発光素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0046356 2016-04-15
KR1020160046356A KR102486036B1 (ko) 2016-04-15 2016-04-15 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지
KR10-2016-0049327 2016-04-22
KR1020160049327A KR20170120878A (ko) 2016-04-22 2016-04-22 발광모듈 및 의료기기

Publications (1)

Publication Number Publication Date
WO2017179944A1 true WO2017179944A1 (ko) 2017-10-19

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PCT/KR2017/004065 Ceased WO2017179944A1 (ko) 2016-04-15 2017-04-14 발광소자, 발광소자 패키지 및 발광모듈

Country Status (5)

Country Link
US (1) US10644194B2 (enExample)
EP (1) EP3444841B1 (enExample)
JP (2) JP7003058B2 (enExample)
CN (2) CN115881868A (enExample)
WO (1) WO2017179944A1 (enExample)

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KR20160014416A (ko) * 2014-07-29 2016-02-11 서울바이오시스 주식회사 자외선 발광 다이오드

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* Cited by examiner, † Cited by third party
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CN111180559A (zh) * 2018-11-12 2020-05-19 晶元光电股份有限公司 半导体元件
CN111180559B (zh) * 2018-11-12 2023-11-28 晶元光电股份有限公司 半导体元件

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EP3444841A1 (en) 2019-02-20
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US20190140137A1 (en) 2019-05-09
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