CN109075160B - 发光器件、发光器件封装和发光模块 - Google Patents
发光器件、发光器件封装和发光模块 Download PDFInfo
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- CN109075160B CN109075160B CN201780023885.9A CN201780023885A CN109075160B CN 109075160 B CN109075160 B CN 109075160B CN 201780023885 A CN201780023885 A CN 201780023885A CN 109075160 B CN109075160 B CN 109075160B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
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- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211613353.XA CN115881868A (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160046356A KR102486036B1 (ko) | 2016-04-15 | 2016-04-15 | 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지 |
| KR10-2016-0046356 | 2016-04-15 | ||
| KR10-2016-0049327 | 2016-04-22 | ||
| KR1020160049327A KR20170120878A (ko) | 2016-04-22 | 2016-04-22 | 발광모듈 및 의료기기 |
| PCT/KR2017/004065 WO2017179944A1 (ko) | 2016-04-15 | 2017-04-14 | 발광소자, 발광소자 패키지 및 발광모듈 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211613353.XA Division CN115881868A (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109075160A CN109075160A (zh) | 2018-12-21 |
| CN109075160B true CN109075160B (zh) | 2022-12-30 |
Family
ID=60042189
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780023885.9A Active CN109075160B (zh) | 2016-04-15 | 2017-04-14 | 发光器件、发光器件封装和发光模块 |
| CN202211613353.XA Pending CN115881868A (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211613353.XA Pending CN115881868A (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10644194B2 (enExample) |
| EP (1) | EP3444841B1 (enExample) |
| JP (2) | JP7003058B2 (enExample) |
| CN (2) | CN109075160B (enExample) |
| WO (1) | WO2017179944A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3411116B1 (en) | 2016-02-05 | 2020-01-22 | Boston Scientific Neuromodulation Corporation | Implantable optical stimulation lead |
| US11201261B2 (en) * | 2017-02-17 | 2021-12-14 | Dowa Electronics Materials Co., Ltd. | Deep ultraviolet light emitting element and method of manufacturing the same |
| JP6486401B2 (ja) * | 2017-03-08 | 2019-03-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP6438542B1 (ja) * | 2017-07-27 | 2018-12-12 | 日機装株式会社 | 半導体発光素子 |
| CN109473510B (zh) * | 2017-09-07 | 2022-05-13 | 佳能株式会社 | 发光晶闸管、发光晶闸管阵列、曝光头和图像形成设备 |
| WO2020095826A1 (ja) * | 2018-11-05 | 2020-05-14 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
| TWD201271S (zh) * | 2018-11-08 | 2019-12-01 | 晶元光電股份有限公司 | 發光二極體之部分 |
| US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
| CN111725369B (zh) * | 2019-03-20 | 2021-11-12 | 隆达电子股份有限公司 | 发光装置 |
| TWD204008S (zh) * | 2019-03-22 | 2020-04-11 | 晶元光電股份有限公司 | 發光裝置之部分 |
| US11424299B2 (en) * | 2019-04-08 | 2022-08-23 | Electronics And Telecommunications Research Institute | Pressure sensitive display device having touch electrode and light emitting layer |
| CN110581205A (zh) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN基发光二极管外延结构及其制备方法 |
| KR102848810B1 (ko) * | 2020-06-01 | 2025-08-25 | 삼성디스플레이 주식회사 | 화소, 그 제조 방법 및 그를 포함하는 표시 장치 |
| WO2022216844A1 (en) | 2021-04-08 | 2022-10-13 | Boston Scientific Neuromodulation Corporation | Photobiomodulation system and delivery device |
| CN113903842B (zh) * | 2021-09-24 | 2022-12-20 | 厦门三安光电有限公司 | 倒装发光二极管和发光装置 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
| EP4565319A1 (en) * | 2022-08-22 | 2025-06-11 | Boston Scientific Neuromodulation Corporation | Photobiomodulation systems including an electrode disposed on or over a light emitter and methods of making and using |
| EP4398258A3 (en) | 2023-01-04 | 2024-08-28 | Boston Scientific Neuromodulation Corporation | Systems and methods incorporating a light therapy user interface for optical modulation |
| CN115863502B (zh) * | 2023-02-21 | 2024-03-19 | 江西兆驰半导体有限公司 | 一种led外延片、外延生长方法及led芯片 |
| WO2024181858A1 (ko) * | 2023-02-28 | 2024-09-06 | 연세대학교 산학협력단 | 2d 발광 박막, 이의 제조방법, 이를 포함하는 발광 소자 및 디스플레이 패널 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194934A (zh) * | 2010-03-17 | 2011-09-21 | 株式会社东芝 | 半导体发光器件及其制造方法、以及晶片及其制造方法 |
| CN102315344A (zh) * | 2010-07-09 | 2012-01-11 | Lg伊诺特有限公司 | 发光器件、发光器件封装和包括其的发光系统 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3778765B2 (ja) * | 2000-03-24 | 2006-05-24 | 三洋電機株式会社 | 窒化物系半導体素子およびその製造方法 |
| US7115896B2 (en) | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
| JP5255759B2 (ja) * | 2005-11-14 | 2013-08-07 | パロ・アルト・リサーチ・センター・インコーポレーテッド | 半導体デバイス用超格子歪緩衝層 |
| US20080137701A1 (en) * | 2006-12-12 | 2008-06-12 | Joseph Michael Freund | Gallium Nitride Based Semiconductor Device with Reduced Stress Electron Blocking Layer |
| JP5083817B2 (ja) | 2007-11-22 | 2012-11-28 | シャープ株式会社 | Iii族窒化物半導体発光素子及びその製造方法 |
| JP4592742B2 (ja) * | 2007-12-27 | 2010-12-08 | Dowaエレクトロニクス株式会社 | 半導体材料、半導体材料の製造方法及び半導体素子 |
| KR101018088B1 (ko) * | 2008-11-07 | 2011-02-25 | 삼성엘이디 주식회사 | 질화물 반도체 소자 |
| WO2011104969A1 (ja) * | 2010-02-24 | 2011-09-01 | 独立行政法人理化学研究所 | 窒化物半導体多重量子障壁を有する発光素子及びその製造方法 |
| TWI649895B (zh) | 2010-04-30 | 2019-02-01 | 美國波士頓大學信託會 | 具能帶結構位變動之高效率紫外光發光二極體 |
| JP5508244B2 (ja) | 2010-11-15 | 2014-05-28 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
| JP5665676B2 (ja) | 2011-07-11 | 2015-02-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
| KR101843420B1 (ko) * | 2011-08-12 | 2018-05-14 | 엘지이노텍 주식회사 | 발광소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| DK2800605T4 (da) | 2012-01-03 | 2023-02-06 | Benesol Inc | Fototerapeutisk apparat til fokuseret uvb-stråling og vitamin-d-syntese og associerede systemer |
| US9224913B2 (en) | 2012-03-29 | 2015-12-29 | Seoul Viosys Co., Ltd. | Near UV light emitting device |
| KR102246648B1 (ko) * | 2014-07-29 | 2021-04-30 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
| US10177273B2 (en) | 2012-03-29 | 2019-01-08 | Seoul Viosys Co., Ltd. | UV light emitting device |
| CN102623599B (zh) * | 2012-04-25 | 2014-05-07 | 华灿光电股份有限公司 | 渐变电子阻挡层的紫外光氮化镓半导体发光二极管 |
| KR101915213B1 (ko) * | 2012-05-17 | 2018-11-06 | 엘지이노텍 주식회사 | 발광소자 |
| KR20130141290A (ko) | 2012-06-15 | 2013-12-26 | 삼성전자주식회사 | 초격자 구조체 및 이를 포함한 반도체 소자 |
| JP6062431B2 (ja) | 2012-06-18 | 2017-01-18 | シャープ株式会社 | 半導体発光装置 |
| KR20140022136A (ko) * | 2012-08-13 | 2014-02-24 | 삼성전자주식회사 | 반도체 발광소자 |
| CN102931306B (zh) * | 2012-11-06 | 2016-02-17 | 华灿光电股份有限公司 | 一种发光二极管外延片 |
| KR20140117117A (ko) | 2013-03-26 | 2014-10-07 | 인텔렉추얼디스커버리 주식회사 | 질화물 반도체 발광소자 |
| KR20150015760A (ko) * | 2013-08-01 | 2015-02-11 | 서울바이오시스 주식회사 | 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 |
| WO2015034865A1 (en) * | 2013-09-03 | 2015-03-12 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| WO2015042552A1 (en) * | 2013-09-23 | 2015-03-26 | Sensor Electronic Technology , Inc. | Group iii nitride heterostructure for optoelectronic device |
| JP6621990B2 (ja) | 2014-01-16 | 2019-12-18 | スタンレー電気株式会社 | 紫外発光ダイオード |
| KR102261948B1 (ko) | 2014-06-30 | 2021-06-08 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비하는 조명 시스템 |
| JP2016039362A (ja) * | 2014-08-07 | 2016-03-22 | 株式会社トクヤマ | 紫外線光源 |
| KR102227772B1 (ko) * | 2014-08-19 | 2021-03-16 | 삼성전자주식회사 | 반도체 발광소자 |
| CN107134514B (zh) * | 2017-05-10 | 2019-09-10 | 华灿光电股份有限公司 | 一种发光二极管的外延片及其制造方法 |
-
2017
- 2017-04-14 WO PCT/KR2017/004065 patent/WO2017179944A1/ko not_active Ceased
- 2017-04-14 US US16/093,795 patent/US10644194B2/en active Active
- 2017-04-14 CN CN201780023885.9A patent/CN109075160B/zh active Active
- 2017-04-14 CN CN202211613353.XA patent/CN115881868A/zh active Pending
- 2017-04-14 JP JP2018554374A patent/JP7003058B2/ja active Active
- 2017-04-14 EP EP17782699.7A patent/EP3444841B1/en active Active
-
2021
- 2021-12-28 JP JP2021215211A patent/JP7270300B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194934A (zh) * | 2010-03-17 | 2011-09-21 | 株式会社东芝 | 半导体发光器件及其制造方法、以及晶片及其制造方法 |
| CN102315344A (zh) * | 2010-07-09 | 2012-01-11 | Lg伊诺特有限公司 | 发光器件、发光器件封装和包括其的发光系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10644194B2 (en) | 2020-05-05 |
| EP3444841B1 (en) | 2020-04-08 |
| EP3444841A1 (en) | 2019-02-20 |
| CN109075160A (zh) | 2018-12-21 |
| JP2019514224A (ja) | 2019-05-30 |
| WO2017179944A1 (ko) | 2017-10-19 |
| CN115881868A (zh) | 2023-03-31 |
| JP7270300B2 (ja) | 2023-05-10 |
| JP7003058B2 (ja) | 2022-02-04 |
| JP2022043283A (ja) | 2022-03-15 |
| EP3444841A4 (en) | 2019-04-03 |
| US20190140137A1 (en) | 2019-05-09 |
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