CN109075160B - 发光器件、发光器件封装和发光模块 - Google Patents
发光器件、发光器件封装和发光模块 Download PDFInfo
- Publication number
- CN109075160B CN109075160B CN201780023885.9A CN201780023885A CN109075160B CN 109075160 B CN109075160 B CN 109075160B CN 201780023885 A CN201780023885 A CN 201780023885A CN 109075160 B CN109075160 B CN 109075160B
- Authority
- CN
- China
- Prior art keywords
- layer
- light emitting
- composition
- semiconductor
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211613353.XA CN115881868B (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0046356 | 2016-04-15 | ||
| KR1020160046356A KR102486036B1 (ko) | 2016-04-15 | 2016-04-15 | 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지 |
| KR10-2016-0049327 | 2016-04-22 | ||
| KR1020160049327A KR20170120878A (ko) | 2016-04-22 | 2016-04-22 | 발광모듈 및 의료기기 |
| PCT/KR2017/004065 WO2017179944A1 (ko) | 2016-04-15 | 2017-04-14 | 발광소자, 발광소자 패키지 및 발광모듈 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211613353.XA Division CN115881868B (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109075160A CN109075160A (zh) | 2018-12-21 |
| CN109075160B true CN109075160B (zh) | 2022-12-30 |
Family
ID=60042189
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780023885.9A Active CN109075160B (zh) | 2016-04-15 | 2017-04-14 | 发光器件、发光器件封装和发光模块 |
| CN202211613353.XA Active CN115881868B (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211613353.XA Active CN115881868B (zh) | 2016-04-15 | 2017-04-14 | 发光器件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10644194B2 (enExample) |
| EP (1) | EP3444841B1 (enExample) |
| JP (2) | JP7003058B2 (enExample) |
| CN (2) | CN109075160B (enExample) |
| WO (1) | WO2017179944A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2017214317B2 (en) | 2016-02-05 | 2019-08-22 | Boston Scientfic Neuromodulation Corporation | Implantable optical stimulation lead |
| JP6803411B2 (ja) * | 2017-02-17 | 2020-12-23 | Dowaエレクトロニクス株式会社 | 深紫外発光素子およびその製造方法 |
| JP6486401B2 (ja) | 2017-03-08 | 2019-03-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP6438542B1 (ja) * | 2017-07-27 | 2018-12-12 | 日機装株式会社 | 半導体発光素子 |
| CN109473510B (zh) * | 2017-09-07 | 2022-05-13 | 佳能株式会社 | 发光晶闸管、发光晶闸管阵列、曝光头和图像形成设备 |
| WO2020095826A1 (ja) * | 2018-11-05 | 2020-05-14 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
| TWD201271S (zh) * | 2018-11-08 | 2019-12-01 | 晶元光電股份有限公司 | 發光二極體之部分 |
| US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
| CN111725369B (zh) * | 2019-03-20 | 2021-11-12 | 隆达电子股份有限公司 | 发光装置 |
| TWD204008S (zh) * | 2019-03-22 | 2020-04-11 | 晶元光電股份有限公司 | 發光裝置之部分 |
| US11424299B2 (en) * | 2019-04-08 | 2022-08-23 | Electronics And Telecommunications Research Institute | Pressure sensitive display device having touch electrode and light emitting layer |
| CN110581205A (zh) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN基发光二极管外延结构及其制备方法 |
| KR102848810B1 (ko) * | 2020-06-01 | 2025-08-25 | 삼성디스플레이 주식회사 | 화소, 그 제조 방법 및 그를 포함하는 표시 장치 |
| WO2022216844A1 (en) | 2021-04-08 | 2022-10-13 | Boston Scientific Neuromodulation Corporation | Photobiomodulation system and delivery device |
| CN115832143A (zh) * | 2021-09-24 | 2023-03-21 | 厦门三安光电有限公司 | 倒装发光二极管和发光装置 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
| WO2024044048A1 (en) * | 2022-08-22 | 2024-02-29 | Boston Scientific Neuromodulation Corporation | Photobiomodulation systems including an electrode disposed on or over a light emitter and methods of making and using |
| EP4398258A3 (en) | 2023-01-04 | 2024-08-28 | Boston Scientific Neuromodulation Corporation | Systems and methods incorporating a light therapy user interface for optical modulation |
| CN115863502B (zh) * | 2023-02-21 | 2024-03-19 | 江西兆驰半导体有限公司 | 一种led外延片、外延生长方法及led芯片 |
| WO2024181858A1 (ko) * | 2023-02-28 | 2024-09-06 | 연세대학교 산학협력단 | 2d 발광 박막, 이의 제조방법, 이를 포함하는 발광 소자 및 디스플레이 패널 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194934A (zh) * | 2010-03-17 | 2011-09-21 | 株式会社东芝 | 半导体发光器件及其制造方法、以及晶片及其制造方法 |
| CN102315344A (zh) * | 2010-07-09 | 2012-01-11 | Lg伊诺特有限公司 | 发光器件、发光器件封装和包括其的发光系统 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3778765B2 (ja) | 2000-03-24 | 2006-05-24 | 三洋電機株式会社 | 窒化物系半導体素子およびその製造方法 |
| US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
| JP5255759B2 (ja) * | 2005-11-14 | 2013-08-07 | パロ・アルト・リサーチ・センター・インコーポレーテッド | 半導体デバイス用超格子歪緩衝層 |
| US20080137701A1 (en) * | 2006-12-12 | 2008-06-12 | Joseph Michael Freund | Gallium Nitride Based Semiconductor Device with Reduced Stress Electron Blocking Layer |
| JP5083817B2 (ja) * | 2007-11-22 | 2012-11-28 | シャープ株式会社 | Iii族窒化物半導体発光素子及びその製造方法 |
| JP4592742B2 (ja) | 2007-12-27 | 2010-12-08 | Dowaエレクトロニクス株式会社 | 半導体材料、半導体材料の製造方法及び半導体素子 |
| KR101018088B1 (ko) | 2008-11-07 | 2011-02-25 | 삼성엘이디 주식회사 | 질화물 반도체 소자 |
| KR101636182B1 (ko) * | 2010-02-24 | 2016-07-04 | 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 | 질화물 반도체 다중 양자 장벽을 갖는 발광 소자 및 그 제조 방법 |
| TWI557936B (zh) * | 2010-04-30 | 2016-11-11 | 美國波士頓大學信託會 | 具能帶結構位變動之高效率紫外光發光二極體 |
| JP5508244B2 (ja) * | 2010-11-15 | 2014-05-28 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
| JP5665676B2 (ja) | 2011-07-11 | 2015-02-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
| KR101843420B1 (ko) * | 2011-08-12 | 2018-05-14 | 엘지이노텍 주식회사 | 발광소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| CA2861620A1 (en) * | 2012-01-03 | 2013-07-11 | Benesol, Inc. | Phototherapeutic apparatus for focused uvb radiation and vitamin d synthesis and associated systems and methods |
| KR102246648B1 (ko) * | 2014-07-29 | 2021-04-30 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
| US10177273B2 (en) * | 2012-03-29 | 2019-01-08 | Seoul Viosys Co., Ltd. | UV light emitting device |
| US9224913B2 (en) | 2012-03-29 | 2015-12-29 | Seoul Viosys Co., Ltd. | Near UV light emitting device |
| CN102623599B (zh) * | 2012-04-25 | 2014-05-07 | 华灿光电股份有限公司 | 渐变电子阻挡层的紫外光氮化镓半导体发光二极管 |
| KR101915213B1 (ko) * | 2012-05-17 | 2018-11-06 | 엘지이노텍 주식회사 | 발광소자 |
| KR20130141290A (ko) * | 2012-06-15 | 2013-12-26 | 삼성전자주식회사 | 초격자 구조체 및 이를 포함한 반도체 소자 |
| CN103918093B (zh) * | 2012-06-18 | 2017-02-22 | 夏普株式会社 | 半导体发光装置 |
| KR20140022136A (ko) * | 2012-08-13 | 2014-02-24 | 삼성전자주식회사 | 반도체 발광소자 |
| CN102931306B (zh) * | 2012-11-06 | 2016-02-17 | 华灿光电股份有限公司 | 一种发光二极管外延片 |
| KR20140117117A (ko) * | 2013-03-26 | 2014-10-07 | 인텔렉추얼디스커버리 주식회사 | 질화물 반도체 발광소자 |
| KR20150015760A (ko) * | 2013-08-01 | 2015-02-11 | 서울바이오시스 주식회사 | 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 |
| US9653631B2 (en) * | 2013-09-03 | 2017-05-16 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| KR20160060749A (ko) * | 2013-09-23 | 2016-05-30 | 센서 일렉트로닉 테크놀로지, 인크 | 광전자 디바이스를 위한 iii 족 질화물 헤테로구조체 |
| JP6621990B2 (ja) * | 2014-01-16 | 2019-12-18 | スタンレー電気株式会社 | 紫外発光ダイオード |
| KR102261948B1 (ko) | 2014-06-30 | 2021-06-08 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비하는 조명 시스템 |
| JP2016039362A (ja) | 2014-08-07 | 2016-03-22 | 株式会社トクヤマ | 紫外線光源 |
| KR102227772B1 (ko) | 2014-08-19 | 2021-03-16 | 삼성전자주식회사 | 반도체 발광소자 |
| CN107134514B (zh) | 2017-05-10 | 2019-09-10 | 华灿光电股份有限公司 | 一种发光二极管的外延片及其制造方法 |
-
2017
- 2017-04-14 EP EP17782699.7A patent/EP3444841B1/en active Active
- 2017-04-14 WO PCT/KR2017/004065 patent/WO2017179944A1/ko not_active Ceased
- 2017-04-14 JP JP2018554374A patent/JP7003058B2/ja active Active
- 2017-04-14 CN CN201780023885.9A patent/CN109075160B/zh active Active
- 2017-04-14 CN CN202211613353.XA patent/CN115881868B/zh active Active
- 2017-04-14 US US16/093,795 patent/US10644194B2/en active Active
-
2021
- 2021-12-28 JP JP2021215211A patent/JP7270300B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194934A (zh) * | 2010-03-17 | 2011-09-21 | 株式会社东芝 | 半导体发光器件及其制造方法、以及晶片及其制造方法 |
| CN102315344A (zh) * | 2010-07-09 | 2012-01-11 | Lg伊诺特有限公司 | 发光器件、发光器件封装和包括其的发光系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3444841A4 (en) | 2019-04-03 |
| JP2022043283A (ja) | 2022-03-15 |
| US20190140137A1 (en) | 2019-05-09 |
| CN115881868B (zh) | 2026-02-03 |
| WO2017179944A1 (ko) | 2017-10-19 |
| CN115881868A (zh) | 2023-03-31 |
| JP7003058B2 (ja) | 2022-02-04 |
| JP2019514224A (ja) | 2019-05-30 |
| US10644194B2 (en) | 2020-05-05 |
| CN109075160A (zh) | 2018-12-21 |
| EP3444841B1 (en) | 2020-04-08 |
| JP7270300B2 (ja) | 2023-05-10 |
| EP3444841A1 (en) | 2019-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109075160B (zh) | 发光器件、发光器件封装和发光模块 | |
| KR102328457B1 (ko) | 발광소자, 발광소자 제조방법 및 이를 구비하는 조명시스템 | |
| CN115101641A (zh) | 半导体器件和包括半导体器件的半导体器件封装 | |
| US10546974B2 (en) | Light-emitting device | |
| US10816143B2 (en) | Ultraviolet light-emitting device and lighting system | |
| KR102359824B1 (ko) | 자외선 발광소자 및 발광소자 패키지 | |
| US10510925B2 (en) | Light-emitting device and lighting system comprising same | |
| KR20150116273A (ko) | 발광소자 및 조명시스템 | |
| KR20170120878A (ko) | 발광모듈 및 의료기기 | |
| US20140367639A1 (en) | Light emitting device and lighting system | |
| KR20160115217A (ko) | 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템 | |
| KR102397266B1 (ko) | 발광소자 및 조명장치 | |
| KR102317473B1 (ko) | 자외선 발광소자 및 조명시스템 | |
| KR102181429B1 (ko) | 발광소자 및 조명시스템 | |
| KR102486036B1 (ko) | 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지 | |
| KR101983292B1 (ko) | 발광소자 | |
| KR102251238B1 (ko) | 자외선 발광소자 및 조명시스템 | |
| KR102200075B1 (ko) | 자외선 발광소자 및 조명시스템 | |
| KR102322696B1 (ko) | 자외선 발광소자 및 발광소자 패키지 | |
| KR102353844B1 (ko) | 자외선 발광소자 및 발광소자 패키지 | |
| KR102342999B1 (ko) | 자외선 발광소자 및 조명시스템 | |
| KR102308720B1 (ko) | 자외선 발광소자 및 조명시스템 | |
| KR102376672B1 (ko) | 발광소자 및 발광소자 패키지 | |
| KR20150142235A (ko) | 발광소자 및 조명시스템 | |
| KR20150142739A (ko) | 발광소자 및 조명시스템 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210714 Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Applicant after: Suzhou Leyu Semiconductor Co.,Ltd. Address before: Han Guoshouershi Applicant before: LG INNOTEK Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Applicant after: Suzhou Liyu Semiconductor Co.,Ltd. Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Applicant before: Suzhou Leyu Semiconductor Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |